CN109702373A - A kind of the high temperature packaging connecting material and its encapsulation Joining Technology of law temperature joining - Google Patents
A kind of the high temperature packaging connecting material and its encapsulation Joining Technology of law temperature joining Download PDFInfo
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- CN109702373A CN109702373A CN201711051315.9A CN201711051315A CN109702373A CN 109702373 A CN109702373 A CN 109702373A CN 201711051315 A CN201711051315 A CN 201711051315A CN 109702373 A CN109702373 A CN 109702373A
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Abstract
A kind of the high temperature packaging connecting material and its encapsulation Joining Technology of law temperature joining, belong to microelectronic packaging technology field.Connecting material is uniformly mixed by tin powder and nickel by powder and is formed, and glass putty content atomic percent is 36.7~57%, and surplus is nickel powder；5~30 μm of glass putty average grain diameter, 5~20 μm of nickel powder average grain diameter；Mixed-powder and organic solvent stirring are mixed into homogeneous paste or paste.Present invention process is that substrate is first had children outside the state plan wave oscillation cleaning, and cold wind dries up after taking-up；Then connecting material is printed on substrate welding surface with silk screen, chip is aligned with connecting material, is assembled into chip/connecting material/circuit board connection structure, is put into vacuum drying oven or atmosphere furnace after fixed；It is finally rapidly heated to 300~340 DEG C, and keeps the temperature 1h~5h, heat preservation terminates cooling, taking-up and realizes connection.Present invention process can make chip and substrate realize low temperature, the encapsulation of small pressure, and the connector thermal stability after encapsulation is good, and temperature resistant capability is strong.
Description
Technical field
The invention belongs to microelectronic packaging technology field, be related to a kind of law temperature joining high temperature packaging connecting material and its
Encapsulate Joining Technology.
Background technique
Electronic device of the development and application in the extreme environments such as high temperature, high power, high frequency is current power electronic technique neck
The emphasis direction of domain development.SiC, GaN and AlN etc. are partly led from first generation elemental semiconductors (Si) and second generation compound
Third generation broad-band gap (WBS) semiconductor material to grow up after body material (GaAs, GaP, InP).First and second generation tradition half
Conductor integrated circuit can not be continued working with device under 200 DEG C or more of hot environment, and output power is low, by high frequency, height
The influence of the conditions such as corrosion is serious.In contrast, the third generations wide bandgap semiconductor materials such as SiC and GaN have band gap loose, critical
The features such as breakdown voltage is high, thermal conductivity is high, carrier saturation drift velocity is big, semiconductor circuit or device at~500 DEG C very
Still there is good transfer characteristic and ability to work under to higher temperature, transfer efficiency and operating temperature can be effectively improved, reduce
Requirement to cooling system, in aerospace, mixed power plant, high-efficiency photovoltaic/wind power system, oil gas drilling, nuclear power generating equipment
There is important application value in the high temperature circuit and device in equal 300-500 DEG C of fields.However, the broad-band gaps such as SiC and GaN are partly led
The highest of body device allows operating temperature to depend not only on the property of semiconductor material, is also limited by encapsulation technology, therefore solves
Certainly the high temperature resistant of chip and substrate, inexpensive interconnection technique and integrity problem have become current microelectronic field there is an urgent need to
It solves the problems, such as.
For the demand of three generations's high temperature power chip especially SiC power chip High-temperature Packaging, both at home and abroad initial research
Thinking is exploitation high-temp solder.From high lead solder is substituted, Zn-Al base, Bi-Ag base, Au-Sn base and Sn-Sb base are developed
The high-temp solders such as solder base.TanimotoSatoshi of Japanese FUPET research institution et al. uses the Zn- for adding a small amount of Ge
5Al alloy has been successfully connected SiC power chip and DBC substrate, but connects temperature and be up to 415 DEG C, and temperature is used for a long time in connector
It spends simultaneously again no more than 250 DEG C, is unable to give full play the high temperature resistant advantage of power chip of new generation.In fact, according to this biography
System thinking --- the temperature resistant capability of soldered fitting is improved by improving the temperature resistant capability of solder itself, to solve high temperature power
The heatproof problem of device encapsulation is very difficult.In general, brazing temperature, brazing filler metal fusing point and soldered fitting in conventional brazing
Relationship between the highest service temperature of permission is: brazing temperature is higher than 30 DEG C -50 DEG C of brazing filler metal fusing point, and brazing filler metal fusing point is higher than
30 DEG C -50 DEG C of highest service temperature is, which means that the permission service temperature of soldered fitting is usually less than 50 DEG C -100 of brazing temperature
℃.In device encapsulation, be brazed higher than chip operating temperature and be not obviously allowed to, even and if permission in chip operating temperature
Under be brazed, the operating temperature that the heatproof of soldered fitting allows compared with device still has larger gap, it is difficult to meet high temperature of new generation
The application requirement of power device.
In recent years, both at home and abroad in terms of high temperature power chip connection of new generation newest thinking be development " law temperature joining/
High-temperature service " interconnection technique, main purpose are that reduction package temperature, reduction package thermal stress avoid encapsulation process as far as possible
To the thermal damage of device, and heat resisting temperature as high as possible can be obtained simultaneously.For this purpose, having developed transient liquid phase sintering connection skill
Art.Its principle is the mixed-powder using refractory metal and low-melting-point metal as connecting material, is utilized in connection procedure low
Melting point metals powder melts to form liquid phase realization connection, while reacting with refractory metal powder solid-liquid counterdiffusion, densifying shape
At high-melting-point articulamentum, to realize law temperature joining/high-temperature service of power chip.The research carried out in the world at present mainly collects
In beauty, Deng developed country, the transient liquid phase sintering reaction system to have conducted a research have Sn-Bi-Ag system, Cu-In system and
Sn-Cu system.Studies have shown that carrying out transient liquid phase sintering connection using Sn-Bi-Ag system, conversion zone temperature resistant capability is not higher than 250
DEG C, temperature resistant capability is lower.It is connected using the transient liquid phase sintering for realizing chip and substrate at 300 DEG C of Cu-In system, room temperature after connection
Shearing strength of joint is only 8MPa；Using the Cu/Cu-Sn/Cu transient liquid phase sintering connection realized at 280 DEG C of Cu-Sn system, 400
Average shearing strength of joint at DEG C is also only 14.6MPa.The main original of Cu-In system and Cu-Sn system jointing low strength
Because being Cu too high levels in mixed-powder as solid phase components, the too small (Cu in Cu-In system of articulamentum amount of liquid phase proportion
The mass ratio of mass ratio Cu in 70% or more, Cu-Sn system is 60% or more), seriously affect the bond strength of linkage interface.One
As need to apply biggish welding pressure and could obtain the connector of higher mechanical property, technique applicability is poor.Therefore, it develops new
Transient liquid phase sintering reaction system improves the relative amount of amount of liquid phase, reduces connection temperature, reduces encapsulation pressure, lifting sub
Temperature resistant capability, to solving the problems, such as that microelectronic component high temperature packaging is of great significance.
Summary of the invention
The purpose of the present invention is being directed to the encapsulation technology demand of high temperature power chip of new generation especially SiC power chip,
Solve in existing high temperature power chip encapsulation technology connect temperature it is excessively high, welding pressure is excessive, the problem of temperature capacity deficiency.
The principle of the present invention be using Ni-Sn as reaction system (W metal powder as high melting point component, metal Sn powder be low melting point
Component) during the connection process low melting point liquid phase component Sn melt to be formed liquid phase realize connection, while with high-melting-point solid phase components Ni
Mutual diffusion/reaction generates compound between refractory metal, to realize the high temperature resistant of articulamentum and the process of densification.?
Intermetallic compound in Ni-Sn system near the side Sn is Ni3Sn4, and ingredient is located at Ni28%-Sn72% (mass ratio),
The heatproof of the intermetallic compound is up to 798.9 DEG C, it means that amount of liquid phase is more than 3/4 (volume) in connection procedure, sufficient
Amount of liquid phase makes that connection can be realized under lesser pressure, and under conditions of guaranteeing good connection characteristic, can permit
Ni appropriate is excessive, to improve the toughness of articulamentum, improves connection reliability.
The contents of the present invention are asking for the high temperature power chip of new generation especially high temperature packaging of SiC power chip
Topic provides the high temperature resistant transient liquid phase sintering encapsulation connecting material and its encapsulation Joining Technology of a kind of law temperature joining.The present invention
Connecting material: uniformly mixed and formed by metallic tin powder and nickel by powder, wherein glass putty content atomic percent be 36.7~
57%, surplus is nickel powder；5~30 μm of glass putty average grain diameter, 5~20 μm of nickel powder average grain diameter；Mixed-powder is stirred with organic solvent
It mixes, be mixed into homogeneous paste or paste, organic solvent is dehydrated alcohol.The encapsulation Joining Technology of connecting material of the invention: first
Substrate is first put into excusing from death wave oscillation cleaning in acetone or dehydrated alcohol, cold wind dries up after taking-up；Then material will be connected with silk screen
Material is printed on substrate welding surface, and chip is aligned with connecting material, is assembled into chip/connecting material/circuit board connection structure, Gu
It being put into vacuum drying oven after fixed, vacuum environment pressure is less than 10-3Pa, or is put into atmosphere furnace after fixing, it is passed through argon gas or nitrogen,
Oxygen content is less than 8ppm in argon gas or nitrogen atmosphere；Finally be rapidly heated to 300 with the heating rate of 80~120 DEG C/min~
340 DEG C, and 60min~300min is kept the temperature, heat preservation terminates to be cooled to 200 DEG C or less taking-ups realization connections, connection under argon gas stream
It is continuously applied 0.02~0.1MPa welding pressure in the process to completion.
The high temperature resistant transient liquid phase sintering connecting material and its packaging technology of a kind of law temperature joining provided by the invention can be with
Chip and substrate is set to realize that the encapsulation of low temperature (300~340 DEG C), small pressure (0.02~0.1MPa), high temperature resistant (798.9 DEG C) connects
It connects, is had the advantage that compared with existing encapsulation technology
(1) the high temperature resistant transient liquid phase sintering encapsulation connecting material and its encapsulation work of a kind of law temperature joining provided by the invention
The enough high temperature packaging connections that chip is realized under conditions of 300~340 DEG C of artistic skill, have the advantages that encapsulation connection temperature is low.
(2) the high temperature resistant transient liquid phase sintering encapsulation connecting material and its encapsulation work of a kind of law temperature joining provided by the invention
The enough high temperature packaging connections that chip is realized under the welding pressure of 0.02~0.1MPa of artistic skill, with small excellent of welding pressure
Point.
(3) the high temperature resistant transient liquid phase sintering encapsulation connecting material and its encapsulation work of a kind of law temperature joining provided by the invention
Articulamentum is enough made to be completely transformed into Ni3Sn4 intermetallic compound (fusing point is up to 798.9 DEG C) for artistic skill and Cu-Sn system formed
Cu6Sn5 intermetallic compound (fusing point is 415 DEG C) is compared, and fusing point is higher, and connector temperature resistant capability is stronger.
(4) the high temperature resistant transient liquid phase sintering encapsulation connecting material and its encapsulation work of a kind of law temperature joining provided by the invention
Artistic skill enough makes articulamentum be completely transformed into Ni3Sn4 intermetallic compound, and heterogeneous microstructure is stablized, and connector thermal stability is strong.?
At 340 DEG C, apply 0.1MPa pressure, realize nickel plating SiC chip after keeping the temperature 300min and plate the connection of Ni substrate, at 350 DEG C
The shearing strength of joint that is averaged down is up to 28.3MPa；Under atmosphere after timeliness 200h, average shearing strength of joint is slightly increased.
(5) the high temperature resistant transient liquid phase sintering encapsulation connecting material and its encapsulation work of a kind of law temperature joining provided by the invention
Skill can encapsulate at a lower temperature compared with traditional high-temp solder and its technique, and can be higher than package temperature (300~
340 DEG C) under conditions of (350~798 DEG C) use, overcome conventional solder connection temperature be higher than using temperature technological deficiency,
Optimize device packaging technology.
Specific embodiment
It is described below for disclosing the present invention so that those skilled in the art can be realized the present invention.It is excellent in being described below
Embodiment is selected to be only used as illustrating, it may occur to persons skilled in the art that other obvious modifications.
Embodiment 1
Metallic tin powder and metallic nickel powder are uniformly mixed first, wherein glass putty content is 36.7~57% (atoms
Than), surplus is nickel powder, 30 μm of glass putty average grain diameter, 20 μm of nickel powder average grain diameter.By mixed-powder and organic solvent (anhydrous second
Alcohol) it stirs, be mixed into homogeneous paste or paste with spare.Then Ni substrate sonic oscillation in acetone or alcohol will be plated, will be taken out
Cold wind drying is afterwards with spare.Finally the Ni-Sn connecting material silk-screen printing of preparation is plated on the substrate welding surface cleaned up
Nickel SiC chip is assemblied on the substrate with solder by hierarchical link, is put into vacuum drying oven after fixed, vacuum environment pressure is less than
10-3Pa, or be put into atmosphere furnace after fixing, it is passed through argon gas or nitrogen, oxygen content is less than 8ppm in atmosphere, and with 80~120
DEG C/min heating rate is rapidly heated to 300 DEG C, 300min is kept the temperature, and be continuously applied the welding pressure of 0.02MPa to having connected
At heat preservation terminates to be cooled to 180 DEG C of taking-ups under argon gas stream.
At 300 DEG C keep the temperature 300min after, articulamentum is comparatively dense, and Sn has completely reacted, microstructure mainly by
Ni3Sn4 intermetallic compound and a small amount of remaining Ni particle composition.The DSC of articulamentum the results show that the fusing endothermic peak of Sn
Through disappearing, there is the melting hump of Ni3Sn4 798.9 DEG C of position, shows that articulamentum turns via the simple substance of Sn and Ni completely
Become dystectic Ni3Sn4 phase (798.9 DEG C of fusing point), articulamentum temperature capacity with higher.SiC chip/Ni-Sn is connected
It connects material/substrate connection and carries out shear at high temperature test, average shearing strength of joint is up to 24.0MPa at 350 DEG C.
Embodiment 2
Metallic tin powder and metallic nickel powder are uniformly mixed first, wherein glass putty content is 36.7~57% (atoms
Than), surplus is nickel powder, 30 μm of glass putty average grain diameter, 10 μm of nickel powder average grain diameter.By mixed-powder and organic solvent (anhydrous second
Alcohol) it stirs, be mixed into homogeneous paste or paste with spare.Then Ni substrate sonic oscillation in acetone or alcohol will be plated, will be taken out
Cold wind drying is afterwards with spare.Finally the Ni-Sn connecting material silk-screen printing of preparation is plated on the substrate welding surface cleaned up
Nickel SiC chip is assemblied on the substrate with solder by hierarchical link, is put into vacuum drying oven after fixed, vacuum environment pressure is less than
10-3Pa, or be put into atmosphere furnace after fixing, it is passed through argon gas or nitrogen, oxygen content is less than 8ppm in atmosphere, and with 80~120
DEG C/min heating rate is rapidly heated to 340 DEG C, 180min is kept the temperature, and be continuously applied the welding pressure of 0.1MPa to having connected
At heat preservation terminates to be cooled to 180 DEG C of taking-ups under argon gas stream.
At 340 DEG C keep the temperature 180min after, articulamentum is comparatively dense, and Sn has completely reacted, microstructure mainly by
Ni3Sn4 intermetallic compound and a small amount of remaining Ni particle composition.The DSC of articulamentum the results show that the fusing endothermic peak of Sn
Through disappearing, there is the melting hump of Ni3Sn4 798.9 DEG C of position.This result shows that articulamentum via the list of Sn and Ni
Matter is completely transformed into dystectic Ni3Sn4 phase (798.9 DEG C of fusing point), articulamentum temperature capacity with higher.To SiC chip/
Ni-Sn connecting material/substrate connection carries out shear at high temperature test, and average shearing strength of joint is up to 24.3MPa at 350 DEG C.
Under atmosphere after 340 DEG C of timeliness 200h, average shearing strength of joint is slightly increased at 350 DEG C.
Embodiment 3
Metallic tin powder and metallic nickel powder are uniformly mixed first, wherein glass putty content is 36.7~57% (atoms
Than), surplus is nickel powder, 30 μm of glass putty average grain diameter, 5 μm of nickel powder average grain diameter.By mixed-powder and organic solvent (anhydrous second
Alcohol) it stirs, be mixed into homogeneous paste or paste with spare.Then Ni substrate sonic oscillation in acetone or alcohol will be plated, will be taken out
Cold wind drying is afterwards with spare.Finally the Ni-Sn connecting material silk-screen printing of preparation is plated on the substrate welding surface cleaned up
Nickel SiC chip is assemblied on the substrate with solder by hierarchical link, is put into vacuum drying oven after fixed, vacuum environment pressure is less than
10-3Pa, or be put into atmosphere furnace after fixing, it is passed through argon gas or nitrogen, oxygen content is less than 8ppm in argon gas or nitrogen atmosphere, and
It is rapidly heated with 80~120 DEG C/min heating rate to 340 DEG C, keeps the temperature 60min, and be continuously applied the welding pressure of 0.02MPa
It is completed to connection, heat preservation terminates to be cooled to 180 DEG C of taking-ups under argon gas stream.
At 340 DEG C keep the temperature 60min after, articulamentum is comparatively dense, and Sn has completely reacted, microstructure mainly by
Ni3Sn4 intermetallic compound and a small amount of remaining Ni particle composition.The DSC of articulamentum the results show that the fusing endothermic peak of Sn
Through disappearing, there is the melting hump of Ni3Sn4 798.9 DEG C of position.Show that articulamentum turns via the simple substance of Sn and Ni completely
Become dystectic Ni3Sn4 phase (798.9 DEG C of fusing point), articulamentum temperature capacity with higher.SiC chip/Ni-Sn is connected
It connects material/substrate connection and carries out shear at high temperature test, average shearing strength of joint is up to 22.0MPa at 350 DEG C.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and what is described in the above embodiment and the description is only the present invention
Principle, various changes and improvements may be made to the invention without departing from the spirit and scope of the present invention, these variation and
Improvement is both fallen in the range of claimed invention.The present invention claims protection scope by appended claims and its
Equivalent defines.
Claims (3)
1. a kind of high temperature packaging connecting material of law temperature joining, it is characterized in that being: material is by metallic tin powder and nickel by powder
Uniformly mixing composition, in mixed-powder, glass putty content atomic percent is 36.7~57%, and surplus is nickel powder, and by mixed powder
End is made homogeneous paste or paste and connects for high temperature packaging.
2. the resistance to high encapsulation connecting material of a kind of law temperature joining according to claim 1, it is characterized in that being: the mixing
In powder, 5~30 μm of glass putty average grain diameter, 5~20 μm of nickel powder average grain diameter；Mixed-powder is stirred with organic solvent, is mixed into
Homogeneous paste or paste, organic solvent are dehydrated alcohol.
3. according to claim 1 or a kind of encapsulation of the high temperature packaging connecting material of law temperature joining as claimed in claim 2 connects
Connect technique, it is characterised in that: substrate is put into sonic oscillation in acetone or dehydrated alcohol first and is cleaned, it is standby to take out cold wind drying
With；Then paste or paste connecting material are printed on substrate welding surface with silk screen, chip is aligned with connecting material, is assembled
It at chip/connecting material/circuit board connection structure, is put into vacuum drying oven after fixed, vacuum environment pressure is less than 10-3Pa, or fixed
After be put into atmosphere furnace, be passed through argon gas or nitrogen, in argon gas or nitrogen atmosphere oxygen content be less than 8ppm；Finally with 80~120 DEG C/
The heating rate of min is rapidly heated to 300~340 DEG C, and keeps the temperature 60min~300min, and heat preservation terminates cooling under argon gas stream
Connection is realized to 200 DEG C or less taking-ups, and 0.02~0.1MPa welding pressure is continuously applied in connection procedure to completion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711051315.9A CN109702373A (en) | 2017-10-25 | 2017-10-25 | A kind of the high temperature packaging connecting material and its encapsulation Joining Technology of law temperature joining |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711051315.9A CN109702373A (en) | 2017-10-25 | 2017-10-25 | A kind of the high temperature packaging connecting material and its encapsulation Joining Technology of law temperature joining |
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| Publication Number | Publication Date |
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| CN109702373A true CN109702373A (en) | 2019-05-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711051315.9A Pending CN109702373A (en) | 2017-10-25 | 2017-10-25 | A kind of the high temperature packaging connecting material and its encapsulation Joining Technology of law temperature joining |
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| CN (1) | CN109702373A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111408866A (en) * | 2020-05-22 | 2020-07-14 | 北京科技大学顺德研究生院 | Tin-nickel composite solder sheet and preparation and use methods thereof |
| CN112317972A (en) * | 2020-09-30 | 2021-02-05 | 厦门大学 | Low-temperature rapid manufacturing method of unidirectional high-temperature-resistant welding joint |
-
2017
- 2017-10-25 CN CN201711051315.9A patent/CN109702373A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111408866A (en) * | 2020-05-22 | 2020-07-14 | 北京科技大学顺德研究生院 | Tin-nickel composite solder sheet and preparation and use methods thereof |
| CN111408866B (en) * | 2020-05-22 | 2021-07-23 | 北京科技大学顺德研究生院 | Tin-nickel composite solder sheet and preparation and use methods thereof |
| CN112317972A (en) * | 2020-09-30 | 2021-02-05 | 厦门大学 | Low-temperature rapid manufacturing method of unidirectional high-temperature-resistant welding joint |
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Application publication date: 20190503 |