CN107819041A - 一种多晶硅太阳电池的背场钝化工艺 - Google Patents
一种多晶硅太阳电池的背场钝化工艺 Download PDFInfo
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Abstract
本发明公开了一种多晶硅太阳电池的背场钝化工艺,包括以下步骤:S1、背场初级钝化:在太阳电池的背面沉积带有开孔的第一钝化膜层,第一钝化膜层为SiNx薄膜,在开孔内印刷内负电极;S2、镀过渡膜层:在第一钝化膜层上沉积内铝层;S3、背场次级钝化:在内铝层上依次沉积有第二钝化膜层和外铝层,所述第二钝化膜层为氧化铈薄膜;S4、负电极焊接:在外铝层上焊接有外负电极。本发明的背场钝化工艺相比现有的钝化接触工艺与钝化局部开孔接触工艺,太阳电池转换效率得到了很高的提升,而且开路电压和短路电流均得到了很好的优化提高,对生产出的太阳电池质量起到一个非常有效的提高,值得广泛推广。
Description
技术领域
本发明涉及太阳电池制造技术领域,具体为一种多晶硅太阳电池的背场钝化工艺。
背景技术
在太阳电池生产工艺过程中,太阳电池的背面需要印刷背电极和铝浆,其中背电极是作为太阳电池的背面电极如外界导通,背电场对太阳电池的起到钝化的效果和收集少子的作用。
背场钝化技术是太阳电池生产工艺过程中丝网印刷的一个重要步骤。多晶硅太阳电池生产工艺过程包含制绒、扩散、刻蚀、PECVD、和丝网印刷、烧结等工序,其中丝网印刷的工艺流程为:背电极印刷→背电场印刷→正电极印刷→烧结→测试→分选→成品电池片。
背场钝化主要有三个方面的作用:1.对硅片背面形成钝化和吸杂,减少复合中心;2.增加对太阳光的长波效应,对太阳光中的长波部分形成二次吸收;3.与硅片表面形成P++层,提高太阳能电池开路电压。
对多晶硅太阳电池传统背电场钝化工艺研究表明:经过钝化的多晶硅太阳电池的光电转换效率比未钝化过的多晶硅太阳电池的光电转换效率高出1.5%以上,主要表现为开路电压和短路电流得到了很大优化。
现有技术中,最常用的两种背场钝化工艺为:1、背面引入诸如氧化硅、氧化铝、氮化硅等介质层的钝化局部开孔接触的PERC/PERL设计工艺;2、背面引入介质层但没有开孔的钝化接触技术工艺。使用两种钝化工艺的任意一种对太阳电池进行钝化时,均能够有效的提高太阳能电池开路电压以及光电转换效率,如下表1所示:
表1
但是对于现今高速发展的太阳能科学技术来说,现有技术最常用的两种背场钝化工艺引发的转换效率提高以及开路电压变大、短路电流变高等有益效果均还可以进一步的进行优化,所以我们提出一种优化后的背场钝化工艺。
发明内容
本发明的目的在于提供一种多晶硅太阳电池的背场钝化工艺,以解决上述背景技术中提出的问题。
为实现上述目的,本发明提供如下技术方案:
一种多晶硅太阳电池的背场钝化工艺,包括以下步骤:
S1、背场初级钝化:在太阳电池的背面沉积带有开孔的第一钝化膜层,在开孔内印刷内负电极;
S2、镀过渡膜层:在第一钝化膜层上沉积内铝层;
S3、背场次级钝化:在内铝层上依次沉积有第二钝化膜层和外铝层;
S4、负电极焊接:在外铝层上焊接有外负电极。
优选的,所述第一钝化膜层为SiNx薄膜。
优选的,所述第二钝化膜层为氧化铈薄膜。
与现有技术相比,本发明的有益效果是:
本发明通过将钝化接触工艺与钝化局部开孔接触工艺很好的进行结合,通过第一钝化膜层进行初级钝化,然后通过内负电极和内铝层的配合,很好的完成局部开孔接触工艺的钝化和导电引出,然后通过第二钝化膜层的沉积,配合着外铝层的设置,很好的完成了钝化接触工艺的钝化和导电引出,并且最后通过焊接的外负电极实现与外部导通。
本发明的背场钝化工艺相比现有的钝化接触工艺与钝化局部开孔接触工艺,太阳电池转换效率得到了很高的提升,而且开路电压和短路电流均得到了很好的优化提高,对生产出的太阳电池质量起到一个非常有效的提高,值得广泛推广。
附图说明
图1为本发明工艺的系统流程框图;
图2为本发明工艺钝化后的太阳电池背场结构图。
图中:1太阳电池、2钝化膜层一、3开孔、4内负电极、5内铝层、6钝化膜层二、7外铝层、8外负电极。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
请参阅图1-2,本发明提供一种技术方案:
一种多晶硅太阳电池的背场钝化工艺,包括以下步骤:
S1、背场初级钝化:在太阳电池的背面沉积带有开孔的第一钝化膜层,在开孔内印刷内负电极;
S2、镀过渡膜层:在第一钝化膜层上沉积内铝层;
S3、背场次级钝化:在内铝层上依次沉积有第二钝化膜层和外铝层;
S4、负电极焊接:在外铝层上焊接有外负电极。
作为一个优选,所述第一钝化膜层为SiNx薄膜,SiNx薄膜在沉积形成后,可以很好的起到钝化效果,而且其不导电的特性,也使得内负电极可以更好的进行电子的汇集和流动。
作为一个优选,所述第二钝化膜层为氧化铈薄膜,氧化铈薄膜在沉积形成后,也可以根据自身的特性起到钝化效果,并且氧化铈薄膜的导电性,使得其可以很好的发挥钝化接触工艺所需要的导电功能,将电子引向外铝层以及外负电极上,实现电路导通。
实施例一:
选择300块厚度为200微米的太阳电池,在经过清洗、制绒、扩散、刻蚀、PECVD后,先进行太阳电池正面电极的印刷后,再通过本发明的背场钝化工艺进行钝化,首先在太阳电池1的背面沉积带有开孔3的第一钝化膜层2,第一钝化膜层2的沉积厚度为20纳米,通过印刷网版的作用,直接实现沉积膜层时自动留有开孔3的目的,第一钝化膜层2选用SiN3材料进行沉积,可以很好的完成钝化和阻电的作用,然后在开孔3内印刷内负电极4,内负电极4选用铝浆印刷而成,内负电极4的一端与太阳电池1背面相接;随后在第一钝化膜层2上沉积内铝层5,内铝层5的沉积厚度为40纳米,内铝层5在沉积完成后,与内负电极4的另一端相接,实现电路的导通;然后在内铝层5上依次沉积有第二钝化膜层6和外铝层7,第二钝化膜层6的沉积厚度也为20纳米,外铝层7的厚度为30纳米,第二钝化膜层6选用氧化铈材料进行沉积,可以很好的实现钝化以及导电的功能,最后在外铝层7上焊接有外负电极8,采用焊接的方式,使得外铝层7在导电时不会受到氧化的影响,可以直接与外负电极8实现很好的电性导通连接,外负电极8与外部进行导电连接和引出。
实施例二:
选择300块厚度为300微米的太阳电池,在经过清洗、制绒、扩散、刻蚀、PECVD后,先进行太阳电池正面电极的印刷后,再通过本发明的背场钝化工艺进行钝化,首先在太阳电池1的背面沉积带有开孔3的第一钝化膜层2,第一钝化膜层2的沉积厚度为30纳米,通过印刷网版的作用,直接实现沉积膜层时自动留有开孔3的目的,第一钝化膜层2选用SiN2材料进行沉积,可以很好的完成钝化和阻电的作用,然后在开孔3内印刷内负电极4,内负电极4选用铝浆印刷而成,内负电极4的一端与太阳电池1背面相接;随后在第一钝化膜层2上沉积内铝层5,内铝层5的沉积厚度为60纳米,内铝层5在沉积完成后,与内负电极4的另一端相接,实现电路的导通;然后在内铝层5上依次沉积有第二钝化膜层6和外铝层7,第二钝化膜层6的沉积厚度也为40纳米,外铝层7的厚度为40纳米,第二钝化膜层6选用氧化铈材料进行沉积,可以很好的实现钝化以及导电的功能,最后在外铝层7上焊接有外负电极8,采用焊接的方式,使得外铝层7在导电时不会受到氧化的影响,可以直接与外负电极8实现很好的电性导通连接,外负电极8与外部进行导电连接和引出。
实施例三:
选择300块厚度为180微米的太阳电池,在经过清洗、制绒、扩散、刻蚀、PECVD后,先进行太阳电池正面电极的印刷后,再通过本发明的背场钝化工艺进行钝化,首先在太阳电池1的背面沉积带有开孔3的第一钝化膜层2,第一钝化膜层2的沉积厚度为20纳米,通过印刷网版的作用,直接实现沉积膜层时自动留有开孔3的目的,第一钝化膜层2选用SiN4材料进行沉积,可以很好的完成钝化和阻电的作用,然后在开孔3内印刷内负电极4,内负电极4选用铝浆印刷而成,内负电极4的一端与太阳电池1背面相接;随后在第一钝化膜层2上沉积内铝层5,内铝层5的沉积厚度为30纳米,内铝层5在沉积完成后,与内负电极4的另一端相接,实现电路的导通;然后在内铝层5上依次沉积有第二钝化膜层6和外铝层7,第二钝化膜层6的沉积厚度也为20纳米,外铝层7的厚度为30纳米,第二钝化膜层6选用氧化铈材料进行沉积,可以很好的实现钝化以及导电的功能,最后在外铝层7上焊接有外负电极8,采用焊接的方式,使得外铝层7在导电时不会受到氧化的影响,可以直接与外负电极8实现很好的电性导通连接,外负电极8与外部进行导电连接和引出。
通过对实施例一、实施例二以及实施例三中各工艺钝化后生产出的太阳电池进行性能检测,与上述各现有工艺进行数据比较,比较数据如下表2所示:
表2
如表2内数据可得,本发明的实施例中制造的太阳电池转换效率相比较原有的钝化技术均至少高出了0.25%以上,而且实施例中的太阳电池开路电压至少高出了11mV以上、太阳电池短路电流至少高出了0.13A以上,具有很明显的优化有益效果。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (3)
1.一种多晶硅太阳电池的背场钝化工艺,其特征在于,包括以下步骤:
S1、背场初级钝化:在太阳电池的背面沉积带有开孔的第一钝化膜层,在开孔内印刷内负电极;
S2、镀过渡膜层:在第一钝化膜层上沉积内铝层;
S3、背场次级钝化:在内铝层上依次沉积有第二钝化膜层和外铝层;
S4、负电极焊接:在外铝层上焊接有外负电极。
2.根据权利要求1所述的一种多晶硅太阳电池的背场钝化工艺,其特征在于:所述第一钝化膜层为SiNx薄膜。
3.根据权利要求1所述的一种多晶硅太阳电池的背场钝化工艺,其特征在于:所述第二钝化膜层为氧化铈薄膜。
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