CN107818952A - A kind of ther mal network model of single-chip half-bridge IGBT power module - Google Patents
A kind of ther mal network model of single-chip half-bridge IGBT power module Download PDFInfo
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- CN107818952A CN107818952A CN201711136172.1A CN201711136172A CN107818952A CN 107818952 A CN107818952 A CN 107818952A CN 201711136172 A CN201711136172 A CN 201711136172A CN 107818952 A CN107818952 A CN 107818952A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Abstract
The invention discloses a kind of ther mal network model of single-chip half-bridge IGBT power module.The model includes IGBT crust thermal resistances, IGBT shell heat radiator thermal resistances, Diode crust thermal resistances, Diode shell heat radiator thermal resistances, the radiator environment thermal resistance of single bridge arm, the current source of expression IGBT power attenuations, the current source of Diode power attenuation is represented, represents the voltage source of environment temperature.Exist between IGBT and Diode shell temperature node in single bridge arm and couple thermal resistance branch road, coupling thermal resistance between upper and lower bridge arm Diode shell temperature nodes be present, exist between radiator temperature node corresponding to upper and lower bridge arm and couple thermal resistance, the upper and lower bridge arm in ther mal network model is full symmetric.Wherein, the existing thermal resistance branch road that couples is made up of thermal resistance series connection ideal diode branch road and thermal resistance series connection ideal diode branch road between the IGBT in single bridge arm and Diode shell temperature node.The ther mal network coupling model of the present invention can more accurately predict junction temperature of the power model under certain loss, more accurately to predict the life-span of power model.
Description
Technical field
The present invention relates to Power Electronic Technique to emulate field, is more particularly to a kind of single-chip half-bridge IGBT power module
Ther mal network model.
Background technology
In recent years, as the fast development of IGBT power module makes it be widely used in space flight, photovoltaic, automobile and other industries,
Its reliability is also got growing concern for.Power model runs under various operating modes and causes its junction temperature random fluctuation, due to
The difference of power model inner. layers thermal coefficient of expansion and produce the thermal stress of different directions, under longtime running, cause power mould
Block breaks down or failed, and then influences the reliability of power electronic system.Therefore, the life prediction to power model is particularly heavy
Will, it on the one hand can in time change to ensure the reliability of system, on the other hand can realize and be stayed in the type selecting of power model
Go out certain nargin to reduce cost.
Life prediction needs to establish the electro thermal coupling model of power electronic system, to obtain power model under certain operating mode
Real time temperature.The ther mal network model of power model is most important part in electro thermal coupling model, determines power mould
Junction temperature situation of the block under certain loss, its accuracy will influence the degree of accuracy of life prediction.
The ther mal network model that each power model manufacturer provides at present is as shown in figure 1, knot-shell comprising IGBT and Diode
Thermal resistance Rth(j-c)IAnd Rth(j-c)D, shell-heat radiator thermal resistance Rth(c-s)M, radiator-environment thermal resistance Rth(s-a), with reference to power model
Power attenuation calculates IGBT and Diode junction temperature.This model is embodied when multiple chips while when working, the shell of power model
Temperature is worked independently by each chip causes the superimposed situation that increases of shell temperature, but the temperature of its substrate surface for thinking upper and lower bridge arm
Spend equal, such case can be approximately considered establishment under the conditions of water cooling, not be inconsistent in the case of natural cooling with actual conditions, can lead
Cause the temperature prediction of power model incorrect.In addition, shell-heat radiator thermal resistance Rth (c-s) M in the model takes different operation sides
The thermal resistance value that maximum under formula, i.e. IGBT or Diode obtain when working independently, it is inverse that this will cause power model to run on
The junction temperature prediction become under device state is bigger than normal.
Power model is operated under natural cooling radiating condition, and the shell temperature of each chip is simultaneously unequal, such as one single chip work
When making, the chip shell temperature is higher than other each chip shell temperature.But heat caused by operating die will necessarily cause other each chips
The growth of shell temperature, junction temperature.Cross conduction when this is due to heat transfer be present, as shown in Fig. 2 when power model works, IGBT
Chip or Diode chips are conducted obliquely as thermal source, its heat with angle [alpha].Due to the distance of chip chamber in power model
Relatively near, its heat flow path can be intersected, and then temperature each other is had an impact, referred to as the temperature coupling phenomenon of chip.
Coupling phenomenon can influence the temperature of chip in power model, and the single-phase bridge being illustrated in figure 3 under SPWM modulation is inverse
Become the temperature oscillogram of the power model of circuit, Tj and Dj are respectively the junction temperature of IGBT and Diode chips, and Tc, Dc are respectively
IGBT and Diode chips shell temperature.Research finds that its corresponding shell temperature also increased in IGBT or Diode cut-offs, in figure
At dotted line frame, the shell Wen Qi of igbt chip can be influenceed by Diode chip temperatures when ending and produce fluctuation；Solid line in figure
At frame, the shell Wen Qi of Diode chips is also influenceed by igbt chip temperature when ending and produces fluctuation.
Obtained by above-mentioned analysis of experimental results, power model each chip shell temperature and differs when running, and the temperature of chip chamber
Degree can influence each other.The shell temperature of each chip is considered as the coupling for unanimously, failing to show this chip chamber by existing ther mal network model
Phenomenon, and the shell in model-heat radiator thermal resistance value be the various methods of operation such as only IGBT work, only Diode work, IGBT with
The maximum that Diode works under (inverter operation), necessarily cause the junction temperature of the electro thermal coupling model prediction that model is established according to this
It is not inconsistent with actual conditions, it is therefore necessary to establish the Coupling Thermal being consistent with an actual conditions network model accurately to assess
Junction temperature.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of more accurate half-bridge power module ther mal network model, this mould
Type takes into account the coupling condition of chip between couplings and different bridge arms of the IGBT from Diode on same bridge arm.
To achieve the above object, a kind of half-bridge power module ther mal network model provided by the invention includes：Represent IGBT cores
Piece is IGBT knots-shell thermal resistance, represents the substrate of IGBT correspondence positions to the thermal resistance between radiator i.e. IGBT to the thermal resistance between substrate
Shell-heat radiator thermal resistance, expression Diode chips to the thermal resistance between substrate are Diode knots-shell thermal resistance, represent Diode correspondence positions
Substrate is Diode shells-heat radiator thermal resistance to the thermal resistance between radiator, represents the substrate of single bridge arm correspondence position between radiator
Thermal resistance be single bridge arm radiator-environment thermal resistance, the current source of bridge arm IGBT power attenuations in expression, represent lower bridge arm
The current source of IGBT power attenuations, the current source of bridge arm Diode power attenuation in expression, the power for representing lower bridge arm Diode
The current source of loss, represents the voltage source of environment temperature, knot-shell thermal resistance of each chip of upper and lower bridge arm and shell-heat radiator thermal resistance with
And represent each chip power loss of upper bridge arm electric current it is source-series after be in parallel, then again with radiator-environment thermal resistance, represent ring
The voltage source of border temperature is in series；Represent to exist between the voltage node of the shell temperature of the IGBT and Diode in single bridge arm and couple
Thermal resistance branch road, represent coupling thermal resistance be present between the voltage node of upper and lower bridge arm Diode shell temperature, represent to dissipate corresponding to upper and lower bridge arm
Exist between the voltage node of hot device temperature and couple thermal resistance, the upper and lower bridge arm in ther mal network model is full symmetric.
The existing thermal resistance branch road that couples is by two thermal resistances between IGBT and Diode shell temperature node in wherein single bridge arm
Series connection ideal diode branch road reverse parallel connection.
Compared with existing model, the present invention has following excellent effect：
1. the existing branch that couples route two heat between the IGBT and Diode shell temperature node in a model in single bridge arm
Hinder the branch road connected with ideal diode and represent that two diodes are in opposite direction, and thermal resistance is of different sizes.Fully present IGBT with
Different coupling conditions between Diode, i.e., because igbt chip area is larger with respect to Diode chip area, heat during its work
Outflow open area is big compared with Diode, then IGBT is more than situations of the Diode to IGBT coupling influence to Diode coupling influence.
2. existing coupling thermal resistance presents upper and lower bridge arm between the shell temperature node of the Diode in a model between upper and lower bridge arm
Coupling condition between the shell of Diode chips；Existing coupling thermal resistance presents up and down between the temperature nodes of upper and lower bridge arm radiator
Thermal coupling situation between bridge arm radiator.With reference to the coupling thermal resistance in 1, this thermal coupling model is sufficiently presented in power model
The thermal coupling situation of any chip chamber, to other chip shells when clearly expressing one or more chip operations in power model
The influence situation of temperature, junction temperature etc., more closing to reality.
Analyzed with reference to more than, the ther mal network coupling model that the present invention establishes can more accurately predict power model one
Junction temperature under setting loss consumption, more accurately to predict the life-span of power model.
Brief description of the drawings
Fig. 1 is the ther mal network illustraton of model that manufacturer provides.
Heat flux distribution figure when Fig. 2 is igbt chip, Diode chip operations.
Fig. 3 same bridge arm IGBT and Diode chips when being invertor operation hygrogram.
Fig. 4 is the installation of TC figure in experimental circuit of the present invention.
Fig. 5 is experimental circuit when IGBT works in the specific embodiment of the invention.
Fig. 6 is experimental circuit when Diode works in the specific embodiment of the invention.
Fig. 7 is the Coupling Thermal network in the specific embodiment of the invention.
Embodiment
The present invention will be further described in detail with reference to the accompanying drawings and detailed description, but the implementation of the present invention is not
It is limited to this, is that those skilled in the art can realize according to prior art if it is noted that in place of not being described in detail below
's.
Fig. 4 show the installation of TC schematic diagram of measurement IGBT power module temperature everywhere, and power model is by Diode cores
Piece (D1, D2), igbt chip (T1, T2), solder layer (solder), DBC plates, copper base (base plate), heat-conducting cream
(TIM), radiator (Heatsink) forms.T1, D1 represent the igbt chip of bridge arm, Diode chips, T2, D2 difference respectively
Represent igbt chip, the Diode chips of lower bridge arm.First thermocouple 401 contacts T1 installed in T1 center position just above
Place, for measuring the junction temperature T of igbt chipJ1；Second thermocouple 402 contacts D1 installed in D1 center position just above
Place, for measuring the junction temperature T of Diode chipsD1；Three thermocouple 403, the 8th thermocouple 408 are separately mounted to upper and lower bridge arm
Igbt chip just below center position, contact power model substrate place, for measuring the shell temperature of T1, T2 chip
TC1、TC2；5th thermocouple 405, the 6th thermocouple 406 are separately mounted to the underface center of the Diode chips of upper and lower bridge arm
Opening position, the substrate for contacting power model is placed, for measuring the shell temperature D of D1, D2 chipC1、DC2；4th thermocouple 404,
Seven thermocouples 407 are separately mounted to IGBT and the Diode centre position of upper and lower bridge arm, apart from radiator upper surface 2.5mm positions
Place is placed, for measuring radiator temperature T corresponding to upper and lower bridge armH1、TH2；9th thermocouple 409 is placed on module centre position
Below the radiator at place, for measuring environment temperature Ta。
It is illustrated in figure 5 main circuit during igbt chip work.Using right side IGBT power module as research object, according to figure
Position of thermocouple shown in 3 is installed in the IGBT power module of right side fix thermocouple after, T1 and T4 are applied respectively
15V gate drive voltage.Control load resistance R and direct voltage source DC source size makes what is flowed through on load resistance
Electric current is I1, for example, I1 can be 20A.After temperature of power module is stable, record thermocouple (401,403-409) measurement
Temperature data, it is designated as the 1st group of data.And the conduction voltage drop for measuring T1 is V1, calculate T1 loss P1 is：
P1=I1 × V1
Main circuit during Diode chip operations is illustrated in figure 6, using right side IGBT power module as research object.By D1,
In D4 access circuits, keep each the installation of TC of right side IGBT power module good.Control load resistance R and DC voltage
The electric current that source DC source size makes to flow through on load resistance R is I2, for example, I2 can be 20A, treats temperature of power module
After stable, the temperature data of record thermocouple (402-409) measurement, the 2nd group of data are designated as.And the conduction voltage drop for measuring D1 is
V2, calculate D1 loss P2 be：
P2=I2 × V2
It is illustrated in figure 7 established Coupling Thermal network model, TJ1、TC1、DC1、DC2、TC2、TH1、TH2、TaEach temperature nodes value
The temperature that thermocouple measures in as above-mentioned direct current experiment.The numerical value of two of which current source (12,13) is respectively upper bridge arm
IGBT, Diode loss value, the numerical value of two other current source (15,14) are respectively lower bridge arm IGBT, Diode loss value,
1st, 3 respectively IGBT and Diode knot-shell thermal resistance, 2,4 respectively IGBT and Diode shell-radiatings hinder；7 be in same bridge arm
Thermal resistance is coupled between IGBT to Diode shell, 6 be to couple thermal resistance between Diode to IGBT shell in same bridge arm, and 8 be upper and lower bridge arm
Between two Diode shell between couple thermal resistance, the 9 coupling thermal resistance between upper and lower bridge arm radiator；5 be the radiating of single bridge arm
The thermal resistance of device-environment.Because model is symmetrical, therefore above-mentioned two experimental analysis is only carried out to obtain each thermal resistance in model
Parameter.When igbt chip is operating die, the value for making 12 is P1, and other current sources are that current source (13,14,15) value is 0, by
Kirchhoff's law, voltage x current equation group is write by the 1st group of data row；When Didoe chips are operating die, current source is made
13 value is P2, and other current sources are that current source (12,14,15) value is 0, by Kirchhoff's law, is write by the 2nd group of data row
Voltage x current equation group.Two equation groups of simultaneous, software aid can be used to obtain 1 in the numerical solution figure of equation group, 2,3,
4th, 5,6,7,8,9 value.
Claims (2)
- A kind of 1. ther mal network model of single-chip half-bridge IGBT power module, it is characterised in that：Including representing igbt chip to base Thermal resistance between plate is IGBT knots-shell thermal resistance（1）, represent IGBT correspondence positions substrate to the thermal resistance between radiator be IGBT shells- Heat radiator thermal resistance（2）, represent Diode chips to the thermal resistance between substrate be Diode knots-shell thermal resistance（3）, represent that Diode corresponds to position The substrate put is to the i.e. Diode of the thermal resistance between radiator shells-heat radiator thermal resistance（4）, represent that the substrate of single bridge arm correspondence position arrives Thermal resistance between radiator is radiator-environment thermal resistance of single bridge arm（5）, the current source of bridge arm IGBT power attenuations in expression （12）, represent the current sources of lower bridge arm IGBT power attenuations（15）, the current source of bridge arm Diode power attenuation in expression （13）, represent lower bridge arm Diode power attenuation current source（14）, represent the voltage source of environment temperature（16）, upper and lower bridge arm The knot of each chip-shell thermal resistance and shell-heat radiator thermal resistance and the source-series rear phase of electric current of each chip power loss of the upper bridge arm of expression Parallel connection, then again with radiator-environment thermal resistance, represent environment temperature voltage source be in series；Represent the IGBT in single bridge arm Exist between the voltage node of Diode shell temperature and couple thermal resistance branch road, the voltage node of expression upper and lower bridge arm Diode shell temperature it Between exist coupling thermal resistance（8）, represent coupling thermal resistance be present between the voltage node of radiator temperature corresponding to upper and lower bridge arm（9）, Upper and lower bridge arm in ther mal network model is full symmetric.
- 2. the ther mal network model of a kind of single-chip half-bridge IGBT power module according to claim 1, it is characterised in that single The existing thermal resistance branch road that couples is by thermal resistance between IGBT and Diode shell temperature node in individual bridge arm（6）Series connection ideal diode （10）Branch road and thermal resistance（7）Series connection ideal diode（11）Branch road forms.
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| CN110161398A (en) * | 2018-09-04 | 2019-08-23 | 河北工业大学 | A method of IGBT power module ageing state is assessed using shell temperature |
| CN113203928A (en) * | 2021-03-31 | 2021-08-03 | 中国南方电网有限责任公司超高压输电公司 | Junction temperature monitoring method, device, equipment and storage medium of power device |
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| CN110161398A (en) * | 2018-09-04 | 2019-08-23 | 河北工业大学 | A method of IGBT power module ageing state is assessed using shell temperature |
| CN110161398B (en) * | 2018-09-04 | 2021-06-25 | 河北工业大学 | Method for evaluating aging state of IGBT power module by using shell temperature |
| CN109444766A (en) * | 2018-11-02 | 2019-03-08 | 广州硅能照明有限公司 | Single chip junction temperature test substrate and method in flip Chip On Board (COB) light source |
| CN113203928A (en) * | 2021-03-31 | 2021-08-03 | 中国南方电网有限责任公司超高压输电公司 | Junction temperature monitoring method, device, equipment and storage medium of power device |
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