CN107818951A - Band heat management high-voltage pulse thyristor switch device - Google Patents
Band heat management high-voltage pulse thyristor switch device Download PDFInfo
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- CN107818951A CN107818951A CN201710946976.1A CN201710946976A CN107818951A CN 107818951 A CN107818951 A CN 107818951A CN 201710946976 A CN201710946976 A CN 201710946976A CN 107818951 A CN107818951 A CN 107818951A
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- negative electrode
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- molybdenum
- bottom plate
- fixture block
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 142
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 88
- 239000011733 molybdenum Substances 0.000 claims abstract description 88
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 87
- 238000001816 cooling Methods 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000002826 coolant Substances 0.000 claims abstract description 39
- 230000017525 heat dissipation Effects 0.000 claims abstract description 32
- 239000000919 ceramic Substances 0.000 claims abstract description 30
- 238000012546 transfer Methods 0.000 claims abstract description 9
- 238000009413 insulation Methods 0.000 claims abstract description 8
- 238000009833 condensation Methods 0.000 claims description 16
- 230000005494 condensation Effects 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 9
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 7
- 238000002788 crimping Methods 0.000 claims description 5
- 238000012856 packing Methods 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 4
- 239000000306 component Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
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- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 239000000110 cooling liquid Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
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- 230000008020 evaporation Effects 0.000 description 1
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- 239000012530 fluid Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
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- 239000000155 melt Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
Abstract
The present invention discloses a kind of band heat management high-voltage pulse thyristor switch device, including inner chamber is cylindric ceramic cartridge (1), negative electrode pedestal bottom plate (16), anode pedestal bottom plate (3)；Cooling medium (19) is filled with the airtight cavity formed by ceramic cartridge (1), negative electrode pedestal bottom plate (16) and anode pedestal bottom plate (3), and with setting and anode heat dissipation pedestal (2) therein, the first molybdenum fixture block (8), silicon valve block (9), insulation sleeve (10), the second molybdenum fixture block (11), negative electrode cooling base (12) and gate pole component (15) direct contact heat transfer.The band heat management high-voltage pulse thyristor switch device of the present invention, the cooling requirement under pulse power load is adapted to, good cooling results, cooling system structure are compact, expansibility is strong.
Description
Technical field
The invention belongs to power electronics and pulse power supply device arts, particularly a kind of good cooling results, volume
Small band heat management high-voltage pulse thyristor switch device.
Background technology
High-voltage pulse thyristor switch device is the core component of pulse power system, its with powerful power magnitude and compared with
Big overload capacity is used widely, and turns into the lasting research emphasis of technical field of pulse power.
As the controlling unit of pulse power adjustment system, the operating current of high-voltage pulse thyristor switch device may be up to
Hundreds of kilo-amperes, the ohmic loss in switching losses and turn on process in switching process can raise the junction temperature of device, too high
Junction temperature can change the working characteristics of device and reduce the reliability of its work, as leakage current increase, device blocking capability reduce simultaneously
Generation is not misleaded by gate pole control, the rise of the tube voltage drop of device, power consumption increase, or even occur that device local temperature is too high to be led
Induced semiconductor layer melts or ablation and permanent failure.
To improve electrician's performance of switching device, ensureing its functional reliability, for high-voltage pulse thyristor switch device
Thermal characteristics, strengthen switching device pulse power effect under (the Zhang Guoqiang great-power electronics such as effective heat management, Zhang Guoqiang
The theoretical and experimental study Zhejiang University master thesis of device Low Temperature Difference radiating, 2010.) devise loop type gravity heat
Pipe cooling system, i.e., the IGCT of switching device is close to the evaporator section center of heat pipe, working fluid absorbs crystalline substance in evaporator section
Gasification is condensed into liquid by the condensation segment radiating of tedge into heat pipe after brake tube heat, and the liquid of condensation is existed by down-comer
Action of Gravity Field is back to evaporator section, and the cooling to switching device is realized in so circulation.Though which can control to a certain extent
The temperature rise of IGCT, realize to its heat management and temperature control, but cooling system takes up space and volume is larger, and IGCT is sent out
Hot spot is relatively low by indirect contact heat exchanger, heat transfer efficiency.Under pulse working mode, because IGCT single pulse power is held
Continuous time scale is small, and heat has little time to be conducted to the evaporator section of heat pipe by heat-conducting mode by IGCT, can make IGCT junction temperature
Instantaneous rise and it is out of hand, therefore effective heat management and the junction temperature control to IGCT can not be realized using which.
Ten thousand and brave wait that (ten thousand and brave, Li little Guo improve the main path power electronics of high power cabinet IGCT radiating effect
Technology, 2002.4) proposition uses the technical measures that air cooling way radiates to high-power thyristor, but which is mainly for constant
The radiating of continuous firing state IGCT, and can not solve the problems, such as the heat history under pulse operation, and bring cooling system volume
It is huge, the problems such as cooling system energy consumption is big.
In a word, because thermal characteristics of the prior art mainly for the switching device under continual and steady operating mode carries out cooling system
Design, and under pulse power effect, because single pulse power action time yardstick is small, the instantaneous caloric value of device has little time to lead to
Cross heat-conducting mode to conduct to cooling device and make the instantaneous junction temperature rise of device, it is impossible to meet the cooling need of high voltage pulse switch device
Ask, have a strong impact on the service behaviour and reliability of high-voltage pulse thyristor switch device, and restrict high-voltage pulse thyristor switch
The structure of device designs with running parameter.
The content of the invention
It is an object of the invention to provide a kind of band heat management high-voltage pulse thyristor switch device, adapt to pulse power and bear
Cooling requirement under lotus, good cooling results, cooling system structure are compact, expansibility is strong.
The technical solution for realizing the object of the invention is：
A kind of band heat management high-voltage pulse thyristor switch device, including inner chamber is cylindric ceramic cartridge 1, by close
Packing 18 crimping be sealed in the negative electrode pedestal bottom plate 16 of the upper surface of ceramic cartridge 1, by welded seal in the lower surface of ceramic cartridge 1
Anode pedestal bottom plate 3；
Also including anode clamp 4 and cathode fixture 13, described cathode fixture 13 is installed on negative electrode pedestal bottom plate 16,
Anode clamp 4 is installed under anode pedestal bottom plate 3；The cathode fixture 13 and anode clamp 4 are by being arranged circumferentially
Multigroup screw rod 5, nut 6 and packing ring 7, fastening clamp is by the ceramic cartridge 1, negative electrode pedestal bottom plate 16 and anode pedestal bottom plate 3
The airtight cavity of formation；
Anode heat dissipation pedestal 2, the first molybdenum fixture block 8, silicon valve block 9, insulation sleeve 10, second are additionally provided with the airtight cavity
Molybdenum fixture block 11, negative electrode cooling base 12 and gate pole component 15；
The silicon valve block 9 is horizontal to be held between the first molybdenum fixture block 8 and the second molybdenum fixture block 11 with one heart, and gate pole component 15 is placed in
The upper surface center of second molybdenum fixture block 11, and ceramic cartridge 1 is drawn by firing line；The insulation sleeve 10 is surrounded on silicon valve block
Between 9 excircles and the inwall of ceramic cartridge 1；
The anode heat dissipation pedestal 2 is horizontally placed between the molybdenum fixture block 8 of anode pedestal bottom plate 3 and first；The negative electrode radiating
Pedestal 12 is horizontally placed between the molybdenum fixture block 11 of negative electrode pedestal bottom plate 16 and second；
It is filled with the airtight cavity formed by ceramic cartridge 1, negative electrode pedestal bottom plate 16 and anode pedestal bottom plate 3
Cooling medium 19, the cooling medium 19 and the silicon valve block 9, the first molybdenum fixture block 8, the second molybdenum fixture block 11, negative electrode cooling base
12nd, anode heat dissipation pedestal 2, negative electrode pedestal bottom plate 16, anode pedestal bottom plate 3, gate pole switch 15 direct contact heat transfers.
Compared with prior art, its remarkable advantage is the present invention：
1st, good cooling results：Present invention filling cooling working medium in the ceramic cartridge internal cavities of closing, may make up two kinds
Heat pipe circuit：One is closing heat pipe circuit, i.e., using silicon valve block as heat pipe evaporator section, with molybdenum fixture block, negative electrode and anode heat dissipation base
Seat, negative electrode and anode pedestal bottom plate are fast by the caloric value of silicon valve block using the phase-change heat-exchange of liquid cooling working medium as condensation segment
Speed is transferred in each component of condensation segment, realizes temperature control and heat management to silicon valve block；Secondly it is composite separation heat pipe
Loop, i.e., with silicon valve block heat pipe evaporator section, using molybdenum fixture block, negative electrode and anode heat dissipation pedestal, negative electrode and anode pedestal bottom plate as
Condensation segment, it is using the phase-change heat-exchange of liquid cooling medium that the caloric value of silicon valve block is fast using external heat exchanger as auxiliary condensation segment
Speed is transferred in each component of condensation segment and external additional condenser, is reduced the heat history of high-voltage pulse thyristor switch device, is entered
One step strengthens cooling effect.And prior art is then successively passed the caloric value of silicon valve block component by molybdenum fixture block using heat-conducting mode
It is directed in copper-based seat, transfer and the heat management of heat is difficult in the small time scale of pulse power loading；As entering one
Step is improved, and the side end face of first, second molybdenum fixture block one opens up multiple heat exchange runners, is reduced the thermal conduction resistance of molybdenum fixture block, is improved molybdenum folder
The heat exchange area of block；And multiple heat emission holes are opened up in runner bottom, and cooling medium is directly contacted with silicon valve block, silicon valve block is straight
Connect and be infiltrated in cooling medium, the most of directly cooled Absorption of Medium of its caloric value, heat exchanged thermoresistance is small, and heat exchange property is high, enters
One step improves the thermal management capabilities of silicon valve block；
2nd, pressure-bearing and sealability are good：Suppressed compared to prior art using shirt rim, anode copper pedestal bottom plate of the present invention is straight
Connecing and be welded in ceramic cartridge lower surface, tough cathode pedestal bottom plate crimps sealing with ceramic cartridge upper surface by sealing gasket, and
The copper-based seat plate outer side of cathode and anode makes the pressure-bearing of device and sealability more preferable by the further fastening clamp of yin, yang fixture；
3rd, it is compact-sized, expansibility is strong：One scheme of the present invention is to be opened on cathode and anode radiating copper pedestal, molybdenum fixture block
If multiple coolant flow channels, heat pipe circuit is closed in switching device Inner Constitution by cooling medium, and radiate with molybdenum fixture block, negative and positive
The condensation segment of pedestal, negative and positive pedestal bottom plate as heat pipe, closing heat pipe cooling system is formed, is effectively simplified high-voltage pulse crystalline substance lock
The structure of pipe switching device heat management system, the volume of switching device heat management system is significantly reduced, is made compact-sized；Secondly side
Case is on the basis of one scheme, to meet the thermal management requirements under the conditions of switching device high frequency, high-repetition-rate, outside setting
Heat exchanger is put as heat pipe condenser section, composite separation heat pipe is formed, while silicon valve block caloric value fast transfer is ensured, has
Effect reduces the heat history of switching device body, improves the expansibility of switching device heat management system；
4th, electric property is good, functional reliability is high：The present invention opens up radiating on cathode and anode cooling base and molybdenum fixture block
Runner, and cathode and anode cooling base is assembled with molybdenum fixture block by radiating flow passage transpostion interval mode, on the one hand effectively improve cooling
Effective area of dissipation of medium, improve heat exchange property, on the other hand because being flat board wall construction between adjacent devices runner, effectively improve
Area of passage during switch conduction, reduce the power consumption of switching device.Meanwhile using the present invention program, make inside switching device
Heat exchange efficiency is high, and Thermal incubation effect is small, can effectively reduce the leakage current and tube voltage drop of switching device, significantly improves high-voltage pulse crystalline substance
Electrician's performance of thyristor switch device work, the reliability for improving switching device work.
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
Brief description of the drawings
Fig. 1 is structural representation of the present invention from cooling high-voltage pulse thyristor switch device.
Fig. 2 is the outline drawing of embodiment illustrated in fig. 1.
Structural representations of Fig. 3 a for molybdenum fixture block in Fig. 1 backwards to silicon valve block side.
Structural representations of Fig. 3 b for molybdenum fixture block in Fig. 1 towards silicon valve block side.
Structural representations of Fig. 4 a for negative electrode cooling base in Fig. 1 backwards to silicon valve block side.
Structural representations of Fig. 4 b for negative electrode cooling base in Fig. 1 towards silicon valve block side.
Structural representations of Fig. 5 a for negative electrode pedestal bottom plate in Fig. 1 towards silicon valve block side.
Structural representations of Fig. 5 b for negative electrode pedestal bottom plate in Fig. 1 backwards to silicon valve block side.
Fig. 6 a are the side end face axonometric drawing of Fig. 1 Anodics pedestal bottom plate one.
Fig. 6 b are another side end face axonometric drawing of Fig. 1 Anodic pedestal bottom plates.
Fig. 7 a are structural representation of Fig. 1 Anodics cooling base towards silicon valve block side.
Fig. 7 b are structural representation of Fig. 1 Anodics cooling base backwards to silicon valve block side.
Fig. 8 is the outline drawing of another implementation of the present invention.
In figure, 1- ceramic cartridges, 2- anode heat dissipation pedestals, 3- anode pedestal bottom plates, 4- anode clamps, 5- screw rods, 6- spiral shells
Mother, 7- packing rings, 8- the first molybdenum fixture blocks, 9- silicon valve blocks, 10- insulation sleeves, 11- the second molybdenum fixture blocks, 12- negative electrode cooling bases, 13- are cloudy
Pole fixture, 14- the first cooling medium interfaces, 15- gate pole components, 16- negative electrode pedestal bottom plates, 17- the second cooling medium interfaces,
18- sealing gaskets, 19- cooling mediums, 20- external heat exchangers, 21- anode pedestal heat exchange runners, 22- anode base stand location pins, 23-
Anode pedestal spacing hole, 25- tedges, 26- down-comers, 31- anode base stand location grooves, 32- anode pedestal spacing rings, 81- are changed
Hot flow path, 82- heat exchange intercommunicating pores, 83- molybdenum fixture block spacer pins, 121- negative electrode pedestal spacing holes, 122- negative electrode base stand location pins,
123- gate pole component spacing holes, 124- gate line lead-out grooves, 125- negative electrode pedestal heat exchange runners, 161- seal grooves, 162- negative electricity
Pole, 163- negative electrode base stand location grooves, 164- negative electrode pedestal spacing rings.
Embodiment
As shown in Figure 1, 2, present invention band heat management high-voltage pulse thyristor switch device, including inner chamber are cylindric pottery
Porcelain tube shell 1, crimped by sealing gasket 18 and be sealed in the negative electrode pedestal bottom plate 16 of the upper surface of ceramic cartridge 1, existed by welded seal
The anode pedestal bottom plate 3 of the lower surface of ceramic cartridge 1；
Also including anode clamp 4 and cathode fixture 13, described cathode fixture 13 is installed on negative electrode pedestal bottom plate 16,
Anode clamp 4 is installed under anode pedestal bottom plate 3；The cathode fixture 13 and anode clamp 4 are by being arranged circumferentially
Multigroup screw rod 5, nut 6 and packing ring 7, fastening clamp is by the ceramic cartridge 1, negative electrode pedestal bottom plate 16 and anode pedestal bottom plate 3
The airtight cavity of formation；
Anode heat dissipation pedestal 2, the first molybdenum fixture block 8, silicon valve block 9, insulation sleeve 10, second are additionally provided with the airtight cavity
Molybdenum fixture block 11, negative electrode cooling base 12 and gate pole component 15；
The silicon valve block 9 is horizontal to be held between the first molybdenum fixture block 8 and the second molybdenum fixture block 11 with one heart, and gate pole component 15 is placed in
The upper surface center of second molybdenum fixture block 11, and ceramic cartridge 1 is drawn by firing line；The insulation sleeve 10 is surrounded on silicon valve block
Between 9 excircles and the inwall of ceramic cartridge 1；
The anode heat dissipation pedestal 2 is horizontally placed between the molybdenum fixture block 8 of anode pedestal bottom plate 3 and first；The negative electrode radiating
Pedestal 12 is horizontally placed between the molybdenum fixture block 11 of negative electrode pedestal bottom plate 16 and second；
It is filled with the airtight cavity formed by ceramic cartridge 1, negative electrode pedestal bottom plate 16 and anode pedestal bottom plate 3
Cooling medium 19, the cooling medium 19 and the silicon valve block 9, the first molybdenum fixture block 8, the second molybdenum fixture block 11, negative electrode cooling base
12nd, anode heat dissipation pedestal 2, negative electrode pedestal bottom plate 16, anode pedestal bottom plate 3, gate pole switch 15 direct contact heat transfers.
As shown in Fig. 3 a, 3b, the first molybdenum fixture block 8 changes backwards to the side of silicon valve block 9 provided with multiple levels being parallel to each other
Hot flow path 81, multiple vertical heat exchange intercommunicating pores 82 for running through molybdenum fixture block 8 are set in the bottom of the heat exchange runner 81, and the heat exchange connects
The diameter of through hole 82 is not more than the width of heat exchange runner 81.
In the first molybdenum fixture block 8 molybdenum fixture block spacer pin 83 is provided with backwards to the side of silicon valve block 9.
The second molybdenum fixture block 11 is identical with the structure of the first molybdenum fixture block 8.
As shown in Fig. 4 a, 4b, the negative electrode cooling base 12 is circular platform type structure, and it is straight towards the side of the second molybdenum fixture block 11
Footpath is small, and it is big towards the side diameter of negative electrode pedestal bottom plate 16；
Gate pole component spacing hole 123 and gate line lead-out groove 124 are offered in the center of negative electrode cooling base 12；
In the negative electrode cooling base 12 multiple horizontal cathode bases being parallel to each other are set towards the side of negative electrode pedestal bottom plate 16
Seat heat exchange runner 125, and have negative electrode base stand location pin 122 bench-type is provided circumferentially about；
It is provided with and the Corresponding matching of molybdenum fixture block spacer pin 83 towards the side of the second molybdenum fixture block 11 in the negative electrode cooling base 12
Negative electrode pedestal spacing hole 121；
As shown in Fig. 5 a, 5b, the negative electrode pedestal bottom plate 16 is provided with the first cooling towards the side of negative electrode cooling base 12 and is situated between
The cooling medium interface 17 of matter interface 14 and second, the first cooling medium interface 14 and the second cooling medium interface 17 with the moon
Pole base bottom plate 16 communicates towards the side of the second molybdenum fixture block 11；
In negative electrode pedestal bottom plate 16 towards being provided with annular seal groove 161 and negative electrode base at the nearly periphery in the side of the second molybdenum fixture block 11
Seat spacing ring 164, it is spacing for being assembled with described negative electrode cooling base 12；
A negative electrode base stand location groove 163 is provided with the negative electrode pedestal spacing ring 164, for the negative electrode pedestal
The assembling positioning of alignment pin 122；Negative electrode 162 is provided with the periphery of the negative electrode pedestal bottom plate 16；
Sealing gasket 18 is assembled on described annular seal groove 161, for negative electrode pedestal bottom plate 16 and the upper end of ceramic cartridge 1
The crimping sealing in face.
As shown in Fig. 6 a, 6b, the anode heat dissipation pedestal 2 is cylindric, in the anode heat dissipation pedestal 2 towards anode base
Seat bottom plate 3 side sets multiple anode pedestal heat exchange runners 21 being parallel to each other, on the face of cylinder of the anode heat dissipation pedestal 2
It is provided with anode base stand location pin 22；
Be provided with anode pedestal spacing hole 23 towards the side of the first molybdenum fixture block 8 in the anode heat dissipation pedestal 2, for it is described
The assembling positioning of molybdenum fixture block spacer pin 83 of first molybdenum fixture block 8；
As shown in Fig. 7 a, 7b, the anode pedestal bottom plate 3 is provided with the anode base of ring-type towards the side of anode heat dissipation pedestal 2
Seat spacing ring 32, it is spacing for being assembled with anode heat dissipation pedestal 2；Anode pedestal is provided with described anode pedestal spacing ring 32
Locating slot 31, positioned for being assembled with the anode base stand location pin 22 on the face of cylinder of anode heat dissipation pedestal 2；
The outer of the anode pedestal bottom plate 3 is welded in the lower surface of ceramic cartridge 1；
Described cooling medium 19 is evaporator section with silicon valve block 9, the first molybdenum fixture block 8, the second molybdenum fixture block 11, negative electrode radiating base
Seat 12, anode heat dissipation pedestal 2, negative electrode pedestal bottom plate 16, anode pedestal bottom plate 3 are used as condensation segment, and described first is cooled down
Media Interface Connector 14 is closed with the second cooling medium interface 17, forms the heat pipe circulation of closing.
The present invention substitutes heat conduction of the prior art or septate heat transfer mode using heat pipe circuit circulation, and high-voltage pulse is brilliant
The silicon valve block direct invasion of thyristor switch device is in cooling medium, the directly cooled Absorption of Medium of its caloric value, heat exchanged thermoresistance
It is small, good effect of heat exchange, the cooling effectiveness of silicon valve block is significantly improved, particularly under pulse power binding mode, its heat management is imitated
Fruit can obtain conspicuousness raising, can effectively reduce the leakage current and tube voltage drop of switching device, the electrician for improving switching device work
Performance and reliability.Described closing heat pipe recycle scheme is：
In the first described molybdenum fixture block 8 multiple parallel heat exchange runners are offered with a side surface of the second molybdenum fixture block 11
81, and open up multiple heat exchange intercommunicating pores 82 in the bottom even of heat exchange runner 81；In the non-heat exchange runner in molybdenum fixture block surface
Place is symmetrical arranged two molybdenum fixture block spacer pins 83；By described molybdenum fixture block do not open up the side smooth surface of heat exchange runner respectively with
The crimping contact of the surface of silicon valve block 9；Current lead-through area during switch conduction is improved, reduces the power consumption of switching device.
The program utilizes shape between molybdenum fixture block 8,11 and negative electrode cooling base 12, the inner flow passage of anode heat dissipation pedestal 2 and silicon valve block 9
Into heat pipe circuit, the first cooling medium interface 14 is closed with the second cooling medium interface 17, be heat pipe evaporator section with silicon valve block 9,
Using molybdenum fixture block 8,11, yin, yang cooling base 12,2, yin, yang pedestal bottom plate 16,3 as condensation segment, pass through convection current or explosive evaporation
The caloric value of silicon valve block 9 is transferred to condensation segment by heat exchange mode, realizes the fast transfer of the caloric value of silicon valve block 9 and to silicon valve block 9
Effective heat management and temperature control.
As shown in figure 8, as an improvement,
Also include external heat exchanger (20), the upper interface of the external heat exchanger (20) passes through tedge (25) and second
Cooling medium interface (17) is connected, and its bottom interface is connected by down-comer (26) with the first cooling medium interface (14), is cooled down
Medium (19) with silicon valve block (9) for evaporator section, with the first molybdenum fixture block (8), the second molybdenum fixture block (11), negative electrode cooling base (12),
Anode heat dissipation pedestal (2), negative electrode pedestal bottom plate (16), anode pedestal bottom plate (3) are used as main condenser section, with external heat exchanger (20)
As auxiliary condensation segment, the circulation of composite separation heat pipe is formed.
Described composite separation heat pipe circuit is evaporated using cooling medium 19 as heat-pipe working medium by heat pipe of silicon valve block
Section, using molybdenum fixture block 8,11, negative electrode cooling base 12, anode heat dissipation pedestal 2, negative electrode pedestal bottom plate 16, anode pedestal bottom plate 3 as
Main condenser section, using external heat exchanger 20 as auxiliary condensation segment, by the gaseous cooling medium of the non-total condensation of main condenser section outside
Put in heat exchanger 20 and further condense, further reduce the heat accumulation of switching device, improve the thermal management effect of switching device.
Further, cooling medium 19 can also use other electrical insulating properties cold in addition to using having phase transition function medium
But liquid.
Further, during to cooling medium 19 using electrical insulating property cooling liquid, except using described closing heat pipe to return
Outside road scheme and composite separation heat pipe circuit scheme, it can be replaced outside on the basis of composite separation heat pipe circuit scheme
Cooling medium circulating pump is installed on the down-comer 26 between the hot bottom interface of device 20 and the first cooling medium interface 14, is situated between by cooling down
Matter forced circulation mode carries out Convective heat tranfer cooling, realizes effective heat management to switching device.
Claims (10)
- A kind of 1. band heat management high-voltage pulse thyristor switch device, it is characterised in that：Including inner chamber ceramic cartridge (1) upper surface is sealed in for cylindric ceramic cartridge (1), by sealing gasket (18) crimping Negative electrode pedestal bottom plate (16), pass through anode pedestal bottom plate (3) of the welded seal in ceramic cartridge (1) lower surface；Also include anode clamp (4) and cathode fixture (13), described cathode fixture (13) is installed on negative electrode pedestal bottom plate (16) On, anode clamp (4) is installed under anode pedestal bottom plate (3)；The cathode fixture (13) passes through week with anode clamp (4) To the multigroup screw rod (5), nut (6) and packing ring (7) being evenly arranged, fastening clamp is by the ceramic cartridge (1), negative electrode pedestal bottom The airtight cavity that plate (16) and anode pedestal bottom plate (3) are formed；Be additionally provided with the airtight cavity anode heat dissipation pedestal (2), the first molybdenum fixture block (8), silicon valve block (9), insulation sleeve (10), Second molybdenum fixture block (11), negative electrode cooling base (12) and gate pole component (15)；The silicon valve block (9) is horizontal to be held between the first molybdenum fixture block (8) and the second molybdenum fixture block (11) with one heart, gate pole component (15) Second molybdenum fixture block (11) upper surface center is placed in, and ceramic cartridge (1) is drawn by firing line；Insulation sleeve (10) ring It is around between silicon valve block (9) excircle and ceramic cartridge (1) inwall；The anode heat dissipation pedestal (2) is horizontally placed between anode pedestal bottom plate (3) and the first molybdenum fixture block (8)；The negative electrode dissipates Hot radical seat (12) is horizontally placed between negative electrode pedestal bottom plate (16) and the second molybdenum fixture block (11)；Filled in the airtight cavity formed by ceramic cartridge (1), negative electrode pedestal bottom plate (16) and anode pedestal bottom plate (3) Have a cooling medium (19), the cooling medium (19) and the silicon valve block (9), the first molybdenum fixture block (8), the second molybdenum fixture block (11), Negative electrode cooling base (12), anode heat dissipation pedestal (2), negative electrode pedestal bottom plate (16), anode pedestal bottom plate (3), gate pole switch (15) direct contact heat transfer.
- 2. switching device according to claim 1, it is characterised in that：The first molybdenum fixture block (8) is provided with multiple horizontal heat exchange runners (81) being parallel to each other backwards to silicon valve block (9) side, in institute The bottom for stating heat exchange runner (81) sets multiple vertical heat exchange intercommunicating pores (82) for running through molybdenum fixture block (8), the heat exchange intercommunicating pore (82) diameter is not more than the width of heat exchange runner (81).
- 3. switching device according to claim 2, it is characterised in that：In the first molybdenum fixture block (8) molybdenum fixture block spacer pin (83) is provided with backwards to silicon valve block (9) side.
- 4. the switching device according to one of claims 1 to 3, it is characterised in that：The second molybdenum fixture block (11) is identical with first molybdenum fixture block (8) structure.
- 5. switching device according to claim 4, it is characterised in that：The negative electrode cooling base (12) is circular platform type structure, and it is small towards second molybdenum fixture block (11) side diameter, and its direction is cloudy Pole base bottom plate (16) side diameter is big；Gate pole component spacing hole (123) and gate line lead-out groove are offered in negative electrode cooling base (12) center (124)；In the negative electrode cooling base (12) multiple horizontal cathode bases being parallel to each other are set towards negative electrode pedestal bottom plate (16) side Seat heat exchange runner (125), and have negative electrode base stand location pin (122) bench-type is provided circumferentially about；It is provided with and corresponding of molybdenum fixture block spacer pin (83) towards second molybdenum fixture block (11) side in the negative electrode cooling base (12) The negative electrode pedestal spacing hole (121) matched somebody with somebody.
- 6. switching device according to claim 5, it is characterised in that：The negative electrode pedestal bottom plate (16) is provided with the first cooling medium interface (14) and the towards negative electrode cooling base (12) side Two cooling medium interfaces (17), the first cooling medium interface (14) and the second cooling medium interface (17) with negative electrode pedestal Bottom plate (16) communicates towards second molybdenum fixture block (11) side；Annular seal groove (161) and negative electrode are provided with second molybdenum fixture block (11) nearly periphery in side of negative electrode pedestal bottom plate (16) direction Pedestal spacing ring (164), for spacing with described negative electrode cooling base (12) assembling；A negative electrode base stand location groove (163) is provided with the negative electrode pedestal spacing ring (164), for the negative electrode pedestal Alignment pin (122) assembling positioning；Negative electrode (162) is provided with the periphery of the negative electrode pedestal bottom plate (16)；Sealing gasket (18) is assembled on described annular seal groove (161), for negative electrode pedestal bottom plate (16) and ceramic cartridge (1) The crimping sealing of upper surface.
- 7. switching device according to claim 1, it is characterised in that：The anode heat dissipation pedestal (2) is cylindric, in the anode heat dissipation pedestal (2) towards anode pedestal bottom plate (3) side If multiple anode pedestal heat exchange runners (21) being parallel to each other, are provided with the face of cylinder of the anode heat dissipation pedestal (2) Anode base stand location pin (22)；Be provided with anode pedestal spacing hole (23) towards first molybdenum fixture block (8) side in the anode heat dissipation pedestal (2), for institute State molybdenum fixture block spacer pin (83) the assembling positioning of the first molybdenum fixture block (8).
- 8. switching device according to claim 7, it is characterised in that：The anode pedestal bottom plate (3) is provided with the anode pedestal spacing ring (32) of ring-type towards anode heat dissipation pedestal (2) side, uses It is spacing in being assembled with anode heat dissipation pedestal (2)；Anode base stand location groove is provided with described anode pedestal spacing ring (32) (31), positioned for being assembled with the anode base stand location pin (22) on anode heat dissipation pedestal (2) face of cylinder；The outer of the anode pedestal bottom plate (3) is welded in the lower surface of ceramic cartridge (1).
- 9. switching device according to claim 6, it is characterised in that：With silicon valve block (9) for evaporator section, the first molybdenum fixture block (8), the second molybdenum fixture block (11), negative electrode dissipate described cooling medium (19) Hot radical seat (12), anode heat dissipation pedestal (2), negative electrode pedestal bottom plate (16), anode pedestal bottom plate (3) are used as condensation segment, and by institute The the first cooling medium interface (14) stated is closed with the second cooling medium interface (17), forms the heat pipe circulation of closing.
- 10. switching device according to claim 6, it is characterised in that：Also include external heat exchanger (20), the upper interface of the external heat exchanger (20) passes through tedge (25) and the second cooling Media Interface Connector (17) is connected, and its bottom interface is connected by down-comer (26) with the first cooling medium interface (14), cooling medium (19) with silicon valve block (9) for evaporator section, with the first molybdenum fixture block (8), the second molybdenum fixture block (11), negative electrode cooling base (12), anode Cooling base (2), negative electrode pedestal bottom plate (16), anode pedestal bottom plate (3) are used as main condenser section, using external heat exchanger (20) as Condensation segment is aided in, forms the circulation of composite separation heat pipe.
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|---|---|---|---|
| CN201710946976.1A CN107818951B (en) | 2017-10-12 | 2017-10-12 | Band heat management high-voltage pulse thyristor switch device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710946976.1A CN107818951B (en) | 2017-10-12 | 2017-10-12 | Band heat management high-voltage pulse thyristor switch device |
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| CN107818951B CN107818951B (en) | 2019-08-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116995043A (en) * | 2023-08-16 | 2023-11-03 | 天津久隆新半导体有限公司 | Thyristor valve section jacking device |
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| CN103489837A (en) * | 2013-09-09 | 2014-01-01 | 株洲南车时代电气股份有限公司 | Thyristor |
| US20150194363A1 (en) * | 2014-01-09 | 2015-07-09 | Electronics And Telecommunications Research Institute | Semiconductor device and method of fabricating the same |
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| CN86100299A (en) * | 1986-01-16 | 1987-07-22 | 中国科学院高等离子体物理研究所 | Inductive type large power high voltage pulse modulator |
| CN102076203A (en) * | 2009-11-24 | 2011-05-25 | 通用电气公司 | Heat radiator for press packaging and cooling and packaging stack |
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