CN107799398B - Manufacturing method of polycrystalline silicon thin film, transistor, substrate and laser equipment - Google Patents

Manufacturing method of polycrystalline silicon thin film, transistor, substrate and laser equipment Download PDF

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CN107799398B
CN107799398B CN201711017375.9A CN201711017375A CN107799398B CN 107799398 B CN107799398 B CN 107799398B CN 201711017375 A CN201711017375 A CN 201711017375A CN 107799398 B CN107799398 B CN 107799398B
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laser
wavelength
laser beam
thin film
excimer laser
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CN107799398A (en
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田雪雁
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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Abstract

The invention provides a manufacturing method of a polycrystalline silicon thin film, the thin film, a transistor, a substrate and laser equipment. The method comprises the following steps: forming a buffer layer on a substrate; forming an amorphous silicon layer on the buffer layer; performing first excimer laser annealing on the amorphous silicon layer by adopting a laser beam with a first wavelength; and performing second excimer laser annealing on the amorphous silicon layer subjected to the first excimer laser annealing by adopting a laser beam with a second wavelength, wherein the second wavelength is smaller than the first wavelength. The method can solve the problems of high surface roughness and uneven polycrystalline silicon grains caused by manufacturing the low-temperature polycrystalline silicon film by adopting the excimer laser annealing in the prior art through twice excimer laser annealing with different wavelengths.

Description

Manufacturing method of polycrystalline silicon thin film, transistor, substrate and laser equipment
Technical Field
The invention relates to the technical field of low-temperature polycrystalline silicon thin films, in particular to a manufacturing method of a polycrystalline silicon thin film, a transistor, a substrate and laser equipment.
Background
An Active-matrix organic light emitting diode (AMOLED) is the best choice for future display technologies due to its advantages of high image quality, short response time of moving images, low power consumption, wide viewing angle, ultra-light and ultra-thin. Currently, in the AMOLED, a polysilicon layer is generally fabricated by Excimer Laser Annealing (ELA), Solid Phase Crystallization (SPC), Metal Induced Crystallization (MIC), or the like. Wherein the fabrication of the polysilicon thin film of the transistor active layer in the backplane through an Excimer Laser Annealing (ELA) process is the only method that has been implemented in mass production.
The Excimer Laser Annealing (ELA) process is a relatively complex annealing process. By adopting the excimer laser annealing method in the prior art, at the boundary where the crystal grains of the polycrystalline silicon film meet, due to the difference in density between the molten silicon and the solid silicon, the molten silicon expands along with the solidification of the molten silicon, and a bulge related to the crystal grain boundary is generated. For example, for a polysilicon film with a thickness of tens of nanometers, the maximum height difference from a peak to a trough of the polysilicon film with a thickness of more than tens of nanometers occurs, and the difference reaches the same level as the thickness of the a-Si film, the surface roughness of the polysilicon film is obviously increased due to the inherent grain boundary bulge of the polysilicon film, and a relatively serious leakage current is generated, so that the mobility and the threshold voltage of the polysilicon film are not uniform.
Disclosure of Invention
The invention aims to provide a method for manufacturing a polycrystalline silicon thin film, the thin film, a transistor, a substrate and laser equipment, and solves the problems of high surface roughness and uneven polycrystalline silicon grains caused by manufacturing a low-temperature polycrystalline silicon thin film by adopting excimer laser annealing in the prior art.
The specific embodiment of the invention provides a method for manufacturing a low-temperature polycrystalline silicon film, which comprises the following steps:
forming a buffer layer on a substrate;
forming an amorphous silicon layer on the buffer layer;
performing first excimer laser annealing on the amorphous silicon layer by adopting a laser beam with a first wavelength;
and performing second excimer laser annealing on the amorphous silicon layer subjected to the first excimer laser annealing by adopting a laser beam with a second wavelength, wherein the second wavelength is smaller than the first wavelength.
Preferably, in the method for manufacturing a low-temperature polysilicon thin film, the laser beam with the first wavelength is a xenon chloride XeCl laser with a wavelength of 308nm, and the laser beam with the second wavelength is a krypton fluoride KrF laser with a wavelength of 248nm or an argon fluoride ArF laser with a wavelength of 193 nm.
Preferably, when the laser beam with the first wavelength is a xenon chloride XeCl laser with a wavelength of 308nm, in the step of performing the first excimer laser annealing on the amorphous silicon layer by using the laser beam with the first wavelength, the pulse frequency of the laser beam with the first wavelength is 450Hz to 550Hz, the overlapping rate is 92% to 98%, the scanning rate is 4mm/s to 16mm/s, and the laser energy density is 300mJ/cm2To 500mJ/cm2And the excimer laser pulse time is 24-34 nanoseconds.
Preferably, in the method for manufacturing a low-temperature polysilicon thin film, when the laser beam with the second wavelength is KrF laser with a wavelength of 248nm, in the step of performing the second excimer laser annealing by using the laser beam with the second wavelength, the pulse frequency of the laser beam with the second wavelength is 5500Hz to 6500Hz, and the scanning rate is 5500Hz to 6500Hz100mm/s to 300mm/s, and the laser energy density is 100mJ/cm2To 200mJ/cm2The excimer laser pulse time is 100-120 ns.
Preferably, before the step of performing the first excimer laser annealing on the amorphous silicon layer by using the laser beam with the first wavelength, the method for manufacturing the low-temperature polysilicon thin film further includes:
and performing high-temperature treatment on the amorphous silicon layer at a temperature of 400 to 500 ℃ for 0.5 to 3 hours.
Preferably, in the method for manufacturing a low-temperature polysilicon thin film, the thickness of the amorphous silicon layer is 30nm to 60 nm.
Preferably, in the method for manufacturing a low-temperature polysilicon thin film, when the first excimer laser annealing and the second excimer laser annealing are performed, the substrate is in the same sealed chamber.
The embodiment of the invention also provides a low-temperature polycrystalline silicon film, which is prepared by adopting the preparation method.
The specific embodiment of the invention also provides a thin film transistor, wherein the active layer of the thin film transistor adopts the low-temperature polycrystalline silicon thin film.
The embodiment of the invention also provides a substrate, wherein the substrate comprises the thin film transistor.
The embodiment of the present invention further provides a laser device, which is used in the method for manufacturing a low temperature polysilicon thin film according to any one of the above embodiments, wherein the laser device includes:
the first laser output module is used for outputting a laser beam with a first wavelength;
and the second laser output module is used for outputting the laser beam with the second wavelength.
Preferably, laser equipment, wherein, laser equipment still wraps light path conversion module and laser head, first laser output module with the laser beam of second laser output module all loops through the light path conversion module with the laser head is exported.
At least one of the above technical solutions of the specific embodiment of the present invention has the following beneficial effects:
according to the method for manufacturing the low-temperature polycrystalline silicon film, the surface of polycrystalline silicon after laser annealing of the low-temperature polycrystalline silicon film is remelted by excimer laser annealing with different wavelengths twice, so that the bulge of grain boundaries is reduced, the surface is smoothened, and the problems of high surface roughness and non-uniform polycrystalline silicon grains of the low-temperature polycrystalline silicon film in the prior art are solved.
Drawings
FIG. 1 is a schematic flow chart of a method for fabricating a low temperature polysilicon thin film according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a low temperature polysilicon thin film fabricated by the fabrication method according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a laser apparatus according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
The method for manufacturing a low-temperature polysilicon thin film according to the embodiment of the present invention, as shown in fig. 1, includes the steps of:
s110, forming a buffer layer on a substrate;
s120, forming an amorphous silicon layer on the buffer layer;
s130, performing first excimer laser annealing on the amorphous silicon layer by adopting a laser beam with a first wavelength;
and S140, performing second excimer laser annealing on the amorphous silicon layer subjected to the first excimer laser annealing by using a laser beam with a second wavelength, wherein the second wavelength is smaller than the first wavelength.
According to the method for manufacturing the low-temperature polycrystalline silicon film, after the first excimer laser annealing, the laser beam with the second wavelength smaller than the first wavelength adopted by the first excimer laser annealing is adopted, the second excimer laser annealing is carried out again, so that the polycrystalline silicon surface obtained after the laser annealing is carried out on the amorphous silicon layer is subjected to the long-time secondary annealing process of the shallow layer, the melting of the near surface of the polycrystalline silicon film is induced, the smooth processing of the surface is realized, the bulge of the grain boundary is reduced, and the problems of high surface roughness and uneven polycrystalline silicon grains of the low-temperature polycrystalline silicon film in the prior art are solved.
In the embodiment of the present invention, preferably, the laser beam with the first wavelength is xenon chloride XeCl laser with a wavelength of 308nm, and the laser beam with the second wavelength is krypton fluoride KrF laser with a wavelength of 248nm or argon fluoride ArF laser with a wavelength of 193 nm.
Specifically, when the laser beam with the first wavelength is a xenon chloride XeCl laser with a wavelength of 308nm, in step S130, the pulse frequency of the laser beam with the first wavelength is preferably 450Hz to 550Hz, the overlapping rate is 92% to 98%, the scanning rate is preferably 4mm/S to 16mm/S, and the laser energy density is preferably 300mJ/cm2To 500mJ/cm2The excimer laser pulse time is 24-34 ns.
When the laser beam of the second wavelength is KrF laser with a wavelength of 248nm, the pulse frequency of the laser beam of the second wavelength is 5500Hz to 6500Hz, the scanning rate is 100mm/S to 300mm/S, and the laser energy density is 100mJ/cm in step S1402To 200mJ/cm2The excimer laser pulse time is 100-120 ns.
In addition to the above illustration of the laser beam with the first wavelength for the first excimer laser annealing and the laser beam with the second wavelength for the second excimer laser annealing, it is needless to say that the laser beam with the first wavelength and the laser beam with the second wavelength may also be other types of laser, for example, the laser beam with the second wavelength may also be argon fluoride (ArF) laser with a wavelength of 193nm, as long as the wavelength of the two excimer laser anneals is different, and the polysilicon surface after the laser annealing of the low-temperature polysilicon thin film is remelted through the two excimer laser anneals, so as to reduce the protrusion of the grain boundary and achieve the purpose of smoothing the surface.
The specific process of the method for manufacturing the low-temperature polysilicon thin film according to the specific embodiment of the present invention will be described in detail below by taking a xenon chloride XeCl laser with a wavelength of 308nm as a laser beam with a first wavelength and a krypton fluoride KrF laser with a wavelength of 248nm as a laser beam with a second wavelength as an example.
With reference to fig. 1 and 2, the method for manufacturing a low-temperature polysilicon thin film according to the embodiment of the present invention specifically includes:
1) cleaning and pre-cleaning the glass substrate 101;
2) forming a buffer layer on the glass substrate 101;
specifically, the step of forming the buffer layer includes: a silicon nitride layer 102 and a silicon dioxide layer 103 are sequentially deposited on the glass substrate 101 using a plasma enhanced chemical vapor deposition PECVD method. Preferably, the thickness of the silicon nitride layer 102 is 50nm to 150nm, and the thickness of the silicon dioxide layer 103 is 100nm to 350 nm.
3) Forming an amorphous silicon layer 104 on the buffer layer;
preferably, the thickness of the amorphous silicon layer 104 is 30nm to 60 nm.
4) Performing high-temperature treatment on the amorphous silicon layer 104 at 400 to 500 ℃ for 0.5 to 3 hours;
5) carrying out first excimer laser annealing on the amorphous silicon layer 104 after high-temperature treatment by using xenon chloride XeCl laser with the wavelength of 308 nm;
specifically, in the first excimer laser annealing process, the laser pulse frequency is 500Hz, the overlapping rate is 95%, the scanning rate is 10mm/s, and the laser energy density is 400mJ/cm2The excimer laser pulse time is 24-34 ns.
And annealing the amorphous silicon layer 104 by utilizing the excimer laser annealing process of the process parameters to obtain a polycrystalline silicon layer of the low-temperature polycrystalline silicon film.
6) Performing second excimer laser annealing on the amorphous silicon layer subjected to the first excimer laser annealing by adopting KrF laser with the wavelength of 248 nm;
preferably, the first excimer laser annealing process and the second excimer laser annealing process are performed in the same sealed chamber, and after the first excimer laser annealing, the glass substrate 101 after laser annealing is left in the sealed chamber during the first excimer laser annealing, and the second excimer laser annealing is continued to avoid contacting with the atmosphere.
Specifically, in the second excimer laser annealing process, the pulse frequency of the laser beam was 6000Hz, the scanning rate was 200mm/s, and the laser fluence was 150mJ/cm2The excimer laser pulse time is 100-120 ns.
In the second excimer laser annealing process, the low-energy, ultra-long time pulse and high-frequency characteristics of KrF (KrF) laser are fully utilized, and the long-time shallow annealing is carried out on the surface of the polycrystalline silicon subjected to the first excimer laser annealing, so that the surface part of the polycrystalline silicon surface is melted, the surface smoothness of the crystallized film is realized, and the problems of serious leakage current generated by the low-temperature polycrystalline silicon film and non-uniform mobility and threshold voltage are solved.
The method for manufacturing the low-temperature polycrystalline silicon film based on the process can obtain the polycrystalline silicon surface with lower roughness and uniform crystal grains, and solves the problems of higher surface roughness and non-uniform polycrystalline silicon crystal grains caused by manufacturing the low-temperature polycrystalline silicon film by adopting excimer laser annealing in the prior art.
In another aspect, the present invention further provides a low temperature polysilicon thin film, wherein the low temperature polysilicon thin film is manufactured by any one of the above methods. Based on the above detailed description, those skilled in the art should understand the specific structure of the low temperature polysilicon thin film manufactured by the above manufacturing method, and will not be described herein again.
In addition, in another aspect, the present invention further provides a thin film transistor, wherein the active layer of the thin film transistor uses the low temperature polysilicon thin film.
Further, the embodiment of the invention also provides a substrate, which comprises the thin film transistor of the low-temperature polycrystalline silicon thin film manufactured by the manufacturing method.
In particular, the substrate can be applied to an active matrix organic light emitting diode display and a low temperature polysilicon thin film transistor liquid crystal display.
From the above detailed description, those skilled in the art can understand the specific structure of the thin film transistor and the substrate made of the low temperature polysilicon thin film by the above manufacturing method, and will not be described in detail here.
In another aspect, the present invention further provides a laser apparatus for the method for manufacturing a low temperature polysilicon thin film, where the laser apparatus includes:
the first laser output module is used for outputting a laser beam with a first wavelength;
and the second laser output module is used for outputting the laser beam with the second wavelength.
In a specific embodiment of the present invention, in the laser device, the laser beam with the first wavelength and the laser beam with the second wavelength may be output by the same laser device, so that the two excimer laser annealing processes of the manufacturing method of the low temperature polysilicon thin film may be completed by the same laser device. Therefore, after the first excimer laser annealing is carried out, the second excimer laser annealing process can be immediately finished, and the high efficiency of the execution of the manufacturing method is ensured.
Preferably, the first laser output module is used for outputting xenon chloride XeCl laser with the wavelength of 308nm, and the second laser output module is used for outputting krypton fluoride KrF laser with the wavelength of 248nm or argon fluoride ArF laser with the wavelength of 193 nm.
Further, according to fig. 3, in the laser apparatus, the laser apparatus includes a housing 200, wherein the first laser output module 210 and the second laser output module 220 are both disposed inside the housing 200. In addition, the laser apparatus further includes an optical path conversion module 300, and the optical path conversion module 300 may be disposed inside the housing 200 or connected to the housing 200. Preferably, the first laser output module 210 and the second laser output module 220 share the same optical path conversion module 300. The laser beam with the first wavelength output by the first laser output module 210 and the laser beam with the second wavelength output by the second laser output module 220 can both be output by the optical path conversion module 300.
Further, the laser apparatus may further include a laser head 400 connected to the optical path conversion module 300, and preferably, the laser beam with the first wavelength output by the first laser output module 210 and the laser beam with the second wavelength output by the second laser output module 220 are both output through the laser head 400.
In this way, in the laser device, the laser beam with the first wavelength and the laser beam with the second wavelength can be output by the same laser head output by the same laser device, so that the laser head correction and adjustment process of two times of excimer laser annealing in the manufacturing method of the low-temperature polycrystalline silicon film is avoided, and the excimer laser annealing process is simpler.
According to the method for manufacturing the low-temperature polycrystalline silicon film, after the first excimer laser annealing, the laser beam with the second wavelength smaller than the first wavelength adopted by the first excimer laser annealing is adopted, the second excimer laser annealing is carried out again, so that the polycrystalline silicon surface obtained after the laser annealing is carried out on the amorphous silicon layer is subjected to the long-time secondary annealing process of the shallow layer, the melting of the near surface of the polycrystalline silicon film is induced, and the smooth processing of the surface is realized.
It can be understood that the second excimer laser annealing may not be limited to one time, and the second excimer laser annealing may also be performed at least twice by using the laser beam with the second wavelength, or after the second excimer laser annealing is performed at least once by using the laser beam with the second wavelength, the excimer laser annealing is performed at least once by using the laser beam with the third wavelength, and the third wavelength is smaller than the first wavelength, which can also achieve the purpose of re-melting the near surface of the polysilicon thin film and achieving the smoothing treatment.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (11)

1. A method for manufacturing a low-temperature polycrystalline silicon film of an active matrix organic light emitting diode AMOLED substrate is characterized by comprising the following steps:
forming a buffer layer on a substrate;
forming an amorphous silicon layer on the buffer layer;
performing first excimer laser annealing on the whole amorphous silicon layer formed on the substrate by using a laser beam with a first wavelength;
performing second excimer laser annealing on the whole amorphous silicon layer subjected to the first excimer laser annealing by adopting a laser beam with a second wavelength, wherein the second wavelength is smaller than the first wavelength;
the laser beam with the first wavelength is xenon chloride XeCl laser with the wavelength of 308nm, and the laser beam with the second wavelength is krypton fluoride KrF laser with the wavelength of 248nm or argon fluoride ArF laser with the wavelength of 193 nm.
2. The method of claim 1, wherein when the laser beam with the first wavelength is a xenon chloride XeCl laser with a wavelength of 308nm, in the step of performing the first excimer laser annealing on the amorphous silicon layer by using the laser beam with the first wavelength, the pulse frequency of the laser beam with the first wavelength is 450Hz to 550Hz, the overlapping rate is 92% to 98%, the scanning rate is 4mm/s to 16mm/s, and the laser energy density is 300mJ/cm2To 500mJ/cm2The excimer laser pulse time is 24-34 ns.
3. The method of claim 1, wherein when the laser beam with the second wavelength is KrF laser with a wavelength of 248nm, the pulse frequency of the laser beam with the second wavelength is 5500Hz to 6500Hz, the scanning rate is 100mm/s to 300mm/s, and the laser energy density is 100mJ/cm in the second excimer laser annealing step2To 200mJ/cm2Accurately divideThe sub-laser pulse time is 100 nanoseconds to 120 nanoseconds.
4. The method for fabricating the low-temperature polysilicon thin film on the AMOLED substrate according to claim 1, wherein before the step of performing the first excimer laser annealing on the amorphous silicon layer by using the laser beam with the first wavelength, the method further comprises:
and performing high-temperature treatment on the amorphous silicon layer at a temperature of 400 to 500 ℃ for 0.5 to 3 hours.
5. The method of claim 1, wherein the amorphous silicon layer has a thickness of 30nm to 60 nm.
6. The method for manufacturing the low-temperature polysilicon thin film of the AMOLED substrate as claimed in claim 1, wherein the substrate is in the same sealed chamber during the first excimer laser annealing and the second excimer laser annealing.
7. A low temperature polysilicon thin film produced by the production method according to any one of claims 1 to 6.
8. A thin film transistor, wherein the low temperature polysilicon thin film of claim 7 is used as an active layer of the thin film transistor.
9. A substrate comprising the thin film transistor according to claim 8.
10. A laser apparatus for the method of fabricating a low temperature polysilicon thin film according to any one of claims 1 to 6, wherein the laser apparatus comprises:
the first laser output module is used for outputting a laser beam with a first wavelength;
the second laser output module is used for outputting a laser beam with a second wavelength;
the laser beam with the first wavelength is xenon chloride XeCl laser with the wavelength of 308nm, and the laser beam with the second wavelength is krypton fluoride KrF laser with the wavelength of 248nm or argon fluoride ArF laser with the wavelength of 193 nm.
11. The laser device of claim 10, further comprising an optical path conversion module and a laser head, wherein the laser beams of the first laser output module and the second laser output module are sequentially output through the optical path conversion module and the laser head.
CN201711017375.9A 2017-10-26 2017-10-26 Manufacturing method of polycrystalline silicon thin film, transistor, substrate and laser equipment Active CN107799398B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101162690A (en) * 2006-10-13 2008-04-16 三星Sdi株式会社 Polysilicon thin film transistor and method of fabricating the same
CN103219230A (en) * 2013-04-19 2013-07-24 京东方科技集团股份有限公司 Manufacturing method of low temperature polysilicon, low temperature polysilicon thin film and thin film transistor
CN103390592A (en) * 2013-07-17 2013-11-13 京东方科技集团股份有限公司 Preparation method of array substrate, array substrate and display device
CN106920773A (en) * 2017-03-10 2017-07-04 京东方科技集团股份有限公司 A kind of preparation method of display panel, display panel and display device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101162690A (en) * 2006-10-13 2008-04-16 三星Sdi株式会社 Polysilicon thin film transistor and method of fabricating the same
CN103219230A (en) * 2013-04-19 2013-07-24 京东方科技集团股份有限公司 Manufacturing method of low temperature polysilicon, low temperature polysilicon thin film and thin film transistor
CN103390592A (en) * 2013-07-17 2013-11-13 京东方科技集团股份有限公司 Preparation method of array substrate, array substrate and display device
CN106920773A (en) * 2017-03-10 2017-07-04 京东方科技集团股份有限公司 A kind of preparation method of display panel, display panel and display device

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