CN107768361A - A kind of high density ultraviolet source - Google Patents
A kind of high density ultraviolet source Download PDFInfo
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- CN107768361A CN107768361A CN201710981925.2A CN201710981925A CN107768361A CN 107768361 A CN107768361 A CN 107768361A CN 201710981925 A CN201710981925 A CN 201710981925A CN 107768361 A CN107768361 A CN 107768361A
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 6
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- 239000010949 copper Substances 0.000 claims description 3
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- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000001723 curing Methods 0.000 description 7
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of high density ultraviolet source,Including light source substrate component (1) and lens (2),Several UV LED chips (3) that can be lighted are arranged at intervals with described light source substrate component (1),Described lens (2) include light extraction panel (21),Described light extraction panel (21) is provided with and is integrally formed with it and is in some lens posts (22) of frustum structure,The bottom of adjacent two lens posts (22) connects,In addition,The top end surface of described lens post (22) is consistent with UV LED chip (3) and is closely touched with UV LED chip (3),The angle of inclination of described lens post (22) is 80 ° to 89 °,It is additionally provided with the outside of described lens (2) and surrounds lens post (22) and confess the exposed casing (4) of optic panel (21).The present invention is simple in construction, and manufacturing process is simple, and optical power density is high, is easily integrated use, while also have very bloom distributing homogeneity.
Description
【Technical field】
The present invention relates to a kind of high density ultraviolet source, belong to semiconductor light source domain.
【Background technology】
Ultra-violet curing is photochemical reaction, irradiates coating using wavelength 300nm to 400nm ultraviolet, it is poly- to produce radiation
Conjunction, crosslinking with radiation etc. react, and are the chemical processes that low molecular weight substance is transformed into high molecular weight product.It has solidification effect
The good, many advantages such as curing rate is fast, VOC discharge is low and sector application scope is wide, therefore from the end of the sixties
Since, this technology is developed rapidly in the world, and its product is all used widely in many industries.
Mercury lamp ultraviolet source has promoted the ultra-violet curing technology of early stage to develop, and the ultraviolet curing equipment using mercury lamp as light source is sent out
Open up last 100 yearses, but the shortcomings of due to mercury lamp short life, power consumption height, use cost height, temperature rise, big volume, while heavy metal
Mercury can cause huge environmental pollution, therefore need the free of contamination ultra-violet curing light source of Development of Novel.At the beginning of 21 century, as LED consolidates
The development of body light source technology, ultra-violet curing enter the LED light source epoch, and it not only provides the ultraviolet light of stable single wavelength, together
When compared to traditional mercury lamp also there are many advantages such as long-life, energy-conservation, low heat-emissive, miniaturization and environmental protection.According to calculating, use
Ultraviolet LED light source module substitutes mercury lamp, can save energy more than 80%, the life-span improves more than 20 times, and market prospects are boundless.
At present, solidification ultraviolet LED light source has all multiple types such as spot light, line source and area source, due to coating material solidified
Photocuring reaction speed depend primarily on UV power density, therefore solidification ultraviolet LED light source need to have high light work(
Rate distribution consistency degree, spot light and line source can be realized by secondary light-distribution, be easier to realize, but current area source
It is main to use periodically equally distributed high-power uv-LED device, pass through regulating cycle and LED component distribution density obtains one
The fixed light distribution uniformity, it can be applied in common wood and ink solidification, but solid in high semiconductor of required precision etc.
Solidification effect can then be influenceed by changing in application.
It is therefore desirable to design it is a kind of it is simple in construction, be easily integrated, while having the very high optical power distribution uniformity
Ultraviolet LED curing light source.
【The content of the invention】
The present invention seeks to overcome the deficiencies in the prior art, there is provided a kind of simple in construction, manufacturing process is simple, luminous power
Density is high, is easily integrated use, while also has the solidification ultraviolet LED light source of very bloom distributing homogeneity.
The present invention is achieved by the following technical solutions：
A kind of high density ultraviolet source, it is characterised in that：Including light source substrate component 1 and lens 2, described light source substrate
Several UV LED chips 3 that can be lighted are arranged at intervals with component 1, described lens 2 include light extraction panel 21, described
Light extraction panel 21 be provided with and be integrally formed with it and be in some lens posts 22 of frustum structure, adjacent two lens posts 22
Bottom connects, in addition, the top end surface of described lens post 22 is consistent and close with UV LED chip 3 with UV LED chip 3
Touch, the angle of inclination of described lens post 22 is 80 ° to 89 °, and the described outside of lens 2, which is additionally provided with, to be surrounded lens post 22 and supply
The exposed casing 4 of light extraction panel 21.
1st, high density ultraviolet source according to claim 1, it is characterised in that：Described light source substrate component 1 wraps
Heat-conducting plate 11 made of metal are included, the both sides of described heat-conducting plate 11 are respectively equipped with the first insulating barrier 12 and the second insulating barrier 13,
The first described insulating barrier 13, which is provided with, is used to fixing the chip bonding pad 14 of UV LED chip 3, on the second described insulating barrier 13
Provided with the outer electrode 15 for connecting external power source, it is provided with described heat-conducting plate 11 and is insulated from separating and for electrically connecting core
The built-in circuit of piece pad 14 and outer electrode 15.
High density ultraviolet source as described above, it is characterised in that：Described heat-conducting plate 11 is one kind in copper, aluminium, iron
Or other alloys are made.
High density ultraviolet source as described above, it is characterised in that：The length of described lens post 22 is 5mm to 5cm.
High density ultraviolet source as described above, it is characterised in that：Described casing 4 is hollow square tubular structure,
Its lower end is installed on heat-conducting plate 11, its upper end is installed on light extraction panel 21, and the wall thickness of described casing 4 is 0.1mm to 1mm.
High density ultraviolet source as described above, it is characterised in that：Described lens post 22 is quartz, plastics or glass material
Material.
High density ultraviolet source as described above, it is characterised in that：Reflection is scribbled on the lateral wall of described lens post 22
Layer.
High density ultraviolet source as described above, it is characterised in that：Described casing 4 is in the one end of light extraction panel 21
Wall connects with the bottom of lens post 22.
High density ultraviolet source as described above, it is characterised in that：The wavelength of light that described UV LED chip 3 is sent
Scope is 360nm to 410nm, and the described length and width specification of UV LED chip 3 is 0.254mm*0.254mm to 1.27mm*
1.27mm, the described thickness range of UV LED chip 3 are 10 microns to 100 microns, the spacing of two neighboring UV LED chip 3
For 10 microns to 500 microns.
High density ultraviolet source as described above, it is characterised in that：The encapsulation order of described high density ultraviolet source is wrapped
Include following steps：
1. UV LED chip 3 is fixed on light source substrate component 1；
2. casing 4 is installed on light source substrate component 1；
3. mounted lens 2 and encapsulation process under vacuum or nitrogen protection atmosphere.
Compared with prior art, the present invention has the following advantages：
1st, lens of the invention include light extraction panel and are integrally formed with light extraction panel and are in the lens post of frustum structure, phase
The bottom of adjacent two lens posts is connected, and the top end surface of lens post is consistent with UV LED chip, therefore, lens post top end surface
Appearance and size it is identical with UV LED chip, such UV LED chip is just bonded completely with lens post top end surface, due to
UV LED chip and the air dielectric that low-refraction is not present in lens, therefore, can be greatly decreased UV LED chip just
Total reflection to light guide, so as to greatly improve light extraction light efficiency, ultraviolet source is set to possess optical power density height, and with very
The characteristics of high optical power distribution uniformity.UV LED chip on light source substrate component is corresponding with lens post top end surface close
Touch, casing is trapped among around lens post and confesses that optic panel is exposed, and total parts are few, and manufacturing process is simple, and cost is low
It is honest and clean.
2nd, lens post of the invention is in frustum structure, and the angle of inclination of lens post 22 is 80 ° to 89 °, therefore, adjacent
Interval between lens post be present, and the air dielectric lower than lens post refractive index in the interval be present, so refringence be present,
So that the light that UV LED chip is sent has the larger angle of total reflection, light can be mainly directed to light extraction panel and
From positive light extraction, ensure the collimation of light extraction.
3rd, casing of the invention in tubular construction, thickness of thin, is set with reference to the UV LED chip and lens post that high density is distributed
Meter so that light source front light extraction collimates, and spot size is substantially consistent with dimension of light source and is evenly distributed, more so as to large area
Light source integrates and ensures the uniformity under the conditions of its large area.
4th, the present invention uses metal heat-conducting plate, can quickly export heat caused by UV LED chip, while heat-conducting plate
The external outer electrode in the back side can facilitate installation maintenance and the Integration Design of ultraviolet source.
【Brief description of the drawings】
Fig. 1 is stereogram of the present invention；
Fig. 2 is upward view of the present invention；
Fig. 3 is sectional view of the present invention；
Fig. 4 is the zoomed-in view at A in Fig. 3；
Fig. 5 is the stereogram of the lens of the present invention；
Fig. 6 is the light path schematic diagram of the present invention.
【Embodiment】
The invention will be further described below in conjunction with the accompanying drawings：
A kind of high density ultraviolet source, including light source substrate component 1 and lens 2, it is spaced on described light source substrate component 1
Several UV LED chips 3 that can be lighted are provided with, described lens 2 include light extraction panel 21, described light extraction panel 21
Provided with being integrally formed with it and being in some lens posts 22 of frustum structure, the bottom of adjacent two lens posts 22 connects, separately
Outside, the top end surface of described lens post 22 is consistent with UV LED chip 3 and is closely touched with UV LED chip 3, described
The angle of inclination of lens post 22 is 80 ° to 89 °, and the outside of described lens 2, which is additionally provided with, to be surrounded lens post 22 and confess optic panel 21
Exposed casing 4.The top end surface of lens post 22 can be square or rectangular, the shape size phase with UV LED chip 3
With such UV LED chip 3 is just bonded and closely touched completely with the top end surface of lens post 22, and UV LED chip 3 is sent out
The light gone out is largely injected in lens post 22.Due to the air of low-refraction being not present in UV LED chip 3 and lens 2
Medium, therefore, the total reflection of UV LED chip forward direction light guide can be greatly decreased, so as to greatly improve light extraction light efficiency, make
Ultraviolet source possesses optical power density height, and has the characteristics of very high optical power distribution uniformity.On light source substrate component 1
UV LED chip 3 is corresponding with the top end surface of lens post 22 closely to be touched, and casing 4 is trapped among around lens post 22 and confesses optic panel
21 is exposed, and total parts are few, and manufacturing process is simple, is easily integrated, cost is cheap.And lens post 22 is in frustum structure
And there is larger inclination angle, therefore, interval between adjacent lens post 22 be present, and exist in the interval and reflected than lens post 22
The low air dielectric of rate, so refringence be present, so that the light that UV LED chip 3 is sent has larger be all-trans
Firing angle, light can be mainly directed to light extraction panel and from positive light extraction, ensure the collimation of light extraction.It is, of course, also possible in lens
High reflection aluminium mirror or other metallic mirror coatings are coated on post 22 to improve reflectivity, the light that increase UV LED chip 3 is sent
The angle of total reflection of line.
Described light source substrate component 1 includes heat-conducting plate 11 made of metal, and described heat-conducting plate 11 is in copper, aluminium, iron
One kind or other alloys be made, the both sides of described heat-conducting plate 11 are respectively equipped with the first insulating barrier 12 and the second insulating barrier 13,
The first described insulating barrier 13, which is provided with, is used to fixing the chip bonding pad 14 of UV LED chip 3, on the second described insulating barrier 13
Provided with the outer electrode 15 for connecting external power source, it is provided with described heat-conducting plate 11 and is insulated from separating and for electrically connecting core
The built-in circuit of piece pad 14 and outer electrode 15.Metal heat-conducting plate 11 can quickly lead heat caused by UV LED chip 3
Go out, while the external outer electrode 15 in the back side of heat-conducting plate 11 can facilitate installation maintenance and the Integration Design of ultraviolet source.
Described UV LED chip 3 is fixed on core using the inverted structure chip of electrode homonymy by upside-down mounting die bond technique
On piece pad 14, range of light wavelengths that described UV LED chip 3 is sent is 360nm to 410nm, described ultraviolet LED core
The length and width specification of piece 3 is 0.254mm*0.254mm to 1.27mm*1.27mm, and the described thickness range of UV LED chip 3 is 10 micro-
For rice to 100 microns, the spacing of two neighboring UV LED chip 3 is 10 microns to 500 microns.
The length of described lens post 22 is 5mm to 5cm.
Described casing 4 is hollow square tubular structure, and its lower end is installed on heat-conducting plate 11, its upper end is installed on light extraction
Panel 21, the wall thickness of described casing 4 is 0.1mm to 1mm.
Inwall of the described casing 4 close to the one end of light extraction panel 21 connects with the bottom of lens post 22.Casing 4 is tied in a tubular form
Structure, thickness of thin, designed with reference to the UV LED chip 3 and lens post 22 that high density is distributed so that light source front light extraction collimates, light
Spot size is substantially consistent with dimension of light source and is evenly distributed, and is integrated so as to large area multiple light courcess and ensures its large area condition
Under uniformity.
Described lens post 22 is the quartz with high index of refraction, plastics or glass material, on the lateral wall of lens post 22
The reflecting layer of high reflectance can also be coated.
Based on above-mentioned light-source structure, the encapsulation flow order of ultraviolet source of the present invention is following steps：
1. UV LED chip 3 is fixed on light source substrate component 1；
2. casing 4 is installed on light source substrate component 1；
3. mounted lens 2 and encapsulation process under vacuum or nitrogen protection atmosphere.
Fig. 6 illustrates the track of the emergent ray of UV LED chip 3.Light 100 is gone out by the front vertical of UV LED chip 3
Penetrate, and be emitted from the front vertical of light extraction panel 21, this some light maximum intensity；Light 200 is hung down by relative UV LED chip 3
Nogata is emitted in small angle inclination, and is emitted from the front of light extraction panel 2 in small angle inclination, and this some light intensity is secondly；
Light 300 is emitted by the relative vertical direction wide-angle tilt of UV LED chip 3, because the angle of inclination of lens post 22 is small and relative
Refractive index height (or the high reflection mirror coated on lens 22), therefore total reflection occurs, decay after multiple reflections, and going out
Without projecting, this some light is most weak for reflection at optic panel 21.Because UV LED chip size is highly small very compared to lens post 22
It is more, therefore the light 100 being finally emitted will have uniformly with light 200 and collimate the spy of (it is smaller to compare angle inclined vertically)
Point.
Claims (10)
- A kind of 1. high density ultraviolet source, it is characterised in that：Including light source substrate component (1) and lens (2), described light source base Several UV LED chips (3) that can be lighted are arranged at intervals with board component (1), described lens (2) include light extraction panel (21), described light extraction panel (21) is provided with and is integrally formed with it and is in some lens posts (22) of frustum structure, adjacent The bottom of two lens posts (22) connects, in addition, the top end surface of described lens post (22) is consistent with UV LED chip (3) And closely touched with UV LED chip (3), the angle of inclination of described lens post (22) is 80 ° to 89 °, described lens (2) Outside, which is additionally provided with, to be surrounded lens post (22) and confesses the exposed casing (4) of optic panel (21).
- 2. high density ultraviolet source according to claim 1, it is characterised in that：Described light source substrate component (1) includes Heat-conducting plate made of metal (11), the both sides of described heat-conducting plate (11) are respectively equipped with the first insulating barrier (12) and the second insulating barrier (13), described the first insulating barrier (13), which is provided with, is used to fixing the chip bonding pads (14) of UV LED chip (3), and described the Two insulating barriers (13) are provided with the outer electrode (15) of connection external power source, are provided with and are insulated from described heat-conducting plate (11) Separate and be used to electrically connect the built-in circuit of chip bonding pad (14) and outer electrode (15).
- 3. high density ultraviolet source according to claim 2, it is characterised in that：Described heat-conducting plate (11) is copper, aluminium, iron In one kind or other alloys be made.
- 4. according to the high density ultraviolet source described in claim 1 or 2 or 3, it is characterised in that：The length of described lens post (22) Spend for 5mm to 5cm.
- 5. high density ultraviolet source according to claim 2, it is characterised in that：Described casing (4) is hollow square Tubular structure, its lower end is installed on heat-conducting plate (11), its upper end is installed on light extraction panel (21), the wall thickness of described casing (4) For 0.1mm to 1mm.
- 6. according to the high density ultraviolet source described in claim 1 or 2 or 3, it is characterised in that：Described lens post (22) is stone English, plastics or glass material.
- 7. high density ultraviolet source according to claim 6, it is characterised in that：On the lateral wall of described lens post (22) Scribble reflecting layer.
- 8. high density ultraviolet source according to claim 4, it is characterised in that：Described casing (4) is close to light extraction panel (21) inwall of one end connects with the bottom of lens post (22).
- 9. according to the high density ultraviolet source described in claim 1 or 2 or 3, it is characterised in that：Described UV LED chip (3) The range of light wavelengths sent is 360nm to 410nm, and described UV LED chip (3) length and width specification is 0.254mm* 0.254mm to 1.27mm*1.27mm, described UV LED chip (3) thickness range is 10 microns to 100 microns, two neighboring The spacing of UV LED chip (3) is 10 microns to 500 microns.
- 10. according to the high density ultraviolet source described in claim 1 or 2 or 3, it is characterised in that：Described high density ultraviolet light The encapsulation order in source comprises the following steps：1. UV LED chip 3 is fixed on light source substrate component 1；2. casing 4 is installed on light source substrate component 1；3. mounted lens 2 and encapsulation process under vacuum or nitrogen protection atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710981925.2A CN107768361B (en) | 2017-10-20 | 2017-10-20 | High-density ultraviolet light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710981925.2A CN107768361B (en) | 2017-10-20 | 2017-10-20 | High-density ultraviolet light source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107768361A true CN107768361A (en) | 2018-03-06 |
| CN107768361B CN107768361B (en) | 2023-12-12 |
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| CN201710981925.2A Active CN107768361B (en) | 2017-10-20 | 2017-10-20 | High-density ultraviolet light source |
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| US20060072199A1 (en) * | 2002-12-16 | 2006-04-06 | Kenichiro Morishita | Lens array sheet and molding method |
| JP2007288169A (en) * | 2006-03-24 | 2007-11-01 | Ricoh Co Ltd | Optical element, illumination device, and image display |
| CN101253364A (en) * | 2005-08-31 | 2008-08-27 | 奥斯兰姆施尔凡尼亚公司 | LED headlamp system |
| CN207367969U (en) * | 2017-10-20 | 2018-05-15 | 中山市光圣半导体科技有限责任公司 | A kind of high density ultraviolet source |
-
2017
- 2017-10-20 CN CN201710981925.2A patent/CN107768361B/en active Active
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| JP2002368283A (en) * | 2001-06-07 | 2002-12-20 | Seiwa Electric Mfg Co Ltd | Led lamp |
| US20060072199A1 (en) * | 2002-12-16 | 2006-04-06 | Kenichiro Morishita | Lens array sheet and molding method |
| CN101253364A (en) * | 2005-08-31 | 2008-08-27 | 奥斯兰姆施尔凡尼亚公司 | LED headlamp system |
| JP2007288169A (en) * | 2006-03-24 | 2007-11-01 | Ricoh Co Ltd | Optical element, illumination device, and image display |
| CN207367969U (en) * | 2017-10-20 | 2018-05-15 | 中山市光圣半导体科技有限责任公司 | A kind of high density ultraviolet source |
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Address after: 528400 Tongyi Industrial Park, Guzhen Town, Zhongshan City, Guangdong Province Patentee after: GREATSHINE SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 528400 Tongyi Industrial Park, Guzhen, Zhongshan City, Guangdong Province, 2nd Building, 2nd-3rd Floor, Qifang Industrial Park, Pinghe Road Patentee before: ZHONGSHAN GREATSHINE SEMICONDUCTOR TECHNOLOGY CO.,LTD. |