CN107749561B - Semiconductor laser packaging structure and preparation method thereof - Google Patents
Semiconductor laser packaging structure and preparation method thereof Download PDFInfo
- Publication number
- CN107749561B CN107749561B CN201711203984.3A CN201711203984A CN107749561B CN 107749561 B CN107749561 B CN 107749561B CN 201711203984 A CN201711203984 A CN 201711203984A CN 107749561 B CN107749561 B CN 107749561B
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- China
- Prior art keywords
- semiconductor laser
- groove
- heat sink
- solder layer
- ridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 238000004806 packaging method and process Methods 0.000 title abstract description 10
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 229910000679 solder Inorganic materials 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a semiconductor laser packaging structure and a preparation method thereof, wherein the structure comprises a heat sink, a solder layer formed on the first surface of the heat sink, and a semiconductor laser tube core welded on the first surface through the solder layer, wherein a ridge area of the semiconductor laser tube core is arranged close to the solder layer; wherein, a groove is arranged on the first surface, and the length direction of the groove is parallel to the length direction of the ridge region; and the ridge region is disposed vertically above the groove. By arranging the groove on one surface of the heat sink, the semiconductor laser tube core is welded and fixed with the heat sink through the solder, and the ridge area of the semiconductor laser tube core is vertically above the groove.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor laser packaging structure and a preparation method thereof.
Background
TO packages are a common form of packaging for semiconductor lasers. The TO packaged semiconductor laser comprises a laser die, a backlight detector, an excessive block, a lens and a heat sink base, and a laser device unit is formed through wire bonding interconnection and airtight packaging. The TO package is a typical coaxial device package, so that the TO package semiconductor laser has the advantages of small volume, low energy consumption, long service life, no need of refrigeration and the like, and is widely used in the fields of optical pumping, optical fiber communication and the like.
The core light emitting portion of the semiconductor laser is a pn junction die composed of p-type and n-type semiconductors, the semiconductor laser is usually soldered TO a heat sink with the p-type surface facing downwards in the TO packaging process, and indium-containing solders have very good thermal and electrical conductivity properties and can be used for soldering between the die and the heat sink. Specifically, the indium-containing solder is covered on the heat sink in advance in an evaporation mode, and then the preset solder is melted again in a high-temperature mode and the like, so that the heat sink and the die are connected.
However, during the solder remelting process, indium solder is prone to "climbing" causing the die mirror to become contaminated, thereby affecting device performance and reliability. In the prior art, the die mirror surface is generally protruded from the edge of the heat sink by a certain distance, so that the indium solder is prevented from polluting the light-emitting mirror surface of the die. However, the mirror surface is far away from the heat sink, so that heat is not easy to dissipate, and the performance and reliability of the device are affected. Therefore, how to prevent indium from contaminating the mirror surface while ensuring good heat dissipation of the mirror surface is an important problem to be solved by semiconductor laser packages.
Disclosure of Invention
In view of the above, the embodiment of the invention provides a semiconductor laser packaging structure, which solves the problem that the solder of a heat sink is easy to pollute the mirror surface of a tube core in the use process of a semiconductor laser.
The first aspect of the present invention provides a semiconductor laser package structure, comprising a heat sink, a solder layer formed on a first surface of the heat sink, and a semiconductor laser die soldered on the first surface through the solder layer, a ridge region of the semiconductor laser die being disposed adjacent to the solder layer; wherein, a groove is arranged on the first surface, and the length direction of the groove is parallel to the length direction of the ridge region; and the ridge region is disposed vertically above the groove.
Optionally, the width of the groove is greater than the width of the land.
Optionally, the projection of the ridge region onto the heat sink is within the opening of the recess.
Optionally, at least one end face of the semiconductor laser die perpendicular to the length direction of the ridge region is flush with at least one end face of the heat sink perpendicular to the length direction of the groove.
Optionally, the groove depth is not less than the ridge height.
The semiconductor laser has the structural characteristics that the fast axis scattering angle is larger, the slow axis scattering angle is smaller, and the laser beam emitted by the semiconductor laser is elliptical. In the embodiment, the groove is formed on the heat sink, and the mirror surface of the light-emitting area of the ridge area of the semiconductor laser tube core is arranged on the heat sink in a suspending manner, so that the influence on the laser emission and the beam shape in the fast axis direction caused by the too close distance between the mirror surface and the heat sink is avoided.
Optionally, a plane formed by the axial center line of the ridge region and the axial center line of the groove is perpendicular to the first surface.
The second aspect of the present invention provides a method for manufacturing a semiconductor laser package structure, comprising the steps of:
forming a groove on a first surface of the heat sink;
forming a solder layer on the first surface;
a semiconductor laser die is arranged on the solder layer, a ridge region (31) of the semiconductor laser die is arranged vertically above the groove, and the ridge region is arranged close to the solder layer;
the solder layer is melted such that the semiconductor laser die is secured to the first surface.
Optionally, the projection of the ridge region onto the heat sink is within the opening of the recess.
Alternatively, the solder layer is prepared by a thermal evaporation or electron beam evaporation process.
Alternatively, the solder layer is melted by resistance heating or electron beam heating.
According to the semiconductor laser packaging structure provided by the invention, the groove is formed in one surface of the heat sink, the semiconductor laser tube core is welded and fixed with the heat sink through the welding flux, and the ridge area of the semiconductor laser tube core is vertically above the groove.
Drawings
The features and advantages of the present invention will be more clearly understood by reference to the accompanying drawings, which are illustrative and should not be construed as limiting the invention in any way, in which:
fig. 1 shows a schematic diagram of a semiconductor laser package structure according to an embodiment of the present invention;
fig. 2 shows a flowchart of a method for manufacturing a semiconductor laser package structure according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
The first aspect of the embodiment of the present invention provides a semiconductor laser package structure, which includes a heat sink 10, a solder layer 20 formed on a first surface of the heat sink 10, and a semiconductor laser die 30 soldered on the first surface through the solder layer 20, wherein a ridge region 31 of the semiconductor laser die 30 is disposed close to the solder layer 20; wherein, a groove 11 is formed on the first surface, and the length direction of the groove 11 is parallel to the length direction of the ridge region 31; and the ridge region 31 is disposed vertically above the recess 11. In a specific embodiment, the ridge region 31 of the semiconductor laser die 30 is a light emitting region, and a portion of the ridge region 31 facing the groove 11 is provided with a light emitting mirror. In a specific embodiment, as shown in fig. 1, a groove is formed on the upper surface of the cuboid-shaped heat sink parallel to the x0z plane, the slotting direction is parallel to the z axis direction, the mirror surface of the ridge light emitting region of the semiconductor laser die is suspended above the groove, and the semiconductor laser die and the heat sink are welded by solder.
As an alternative embodiment, the width of the groove 11 is greater than the width of the land 31. In a specific embodiment, as shown in fig. 1, the width of the groove 11 in the x-axis direction is greater than the width of the ridge region 31.
As an alternative embodiment, the ridge 31 is projected on the heat sink 10 within the opening of the recess 11. In a specific embodiment, the ridge 31 is projected in the center of the groove 11.
As an alternative embodiment, at least one end face of the semiconductor laser die 30 perpendicular to the length direction of the ridge region 31 is flush with at least one end face of the heat sink 10 perpendicular to the length direction of the groove 11. In a specific embodiment, the semiconductor laser die 30 has two end faces parallel to the plane x0y, any one of which is flush with one of the end faces of the heat sink.
As an alternative embodiment, the depth of the groove 11 is not less than the height of the ridge region 31. In a specific embodiment, the opening depth (i.e., y-axis direction) of the groove 11 is not smaller than the height of the ridge region 31 (also y-axis direction). In a specific embodiment, the grooves 11 are not fully open on the heat sink in the z-axis direction, and the slot length is 15 μm to 25 μm. In an alternative embodiment, the grooves are grooved to a length of 20 μm along the z-axis direction such that the light emitting region mirrors on the semiconductor laser die ridge regions are above the grooves, the mirrors of the reflective regions being in contact with the heat sink.
The semiconductor laser has the structural characteristics that the fast axis scattering angle is larger, the slow axis scattering angle is smaller, and the laser beam emitted by the semiconductor laser is elliptical. In the embodiment, the groove is formed on the heat sink, and the mirror surface of the light-emitting area of the ridge area of the semiconductor laser tube core is arranged on the heat sink in a suspending manner, so that the influence on the laser emission and the beam shape in the fast axis direction caused by the too close distance between the mirror surface and the heat sink is avoided.
As an alternative embodiment, the plane formed by the axial center line of the ridge region 31 and the axial center line of the groove 11 is perpendicular to the first plane. In a specific embodiment, the plane formed by the axial centerline of land 31 and the axial centerline of groove 11 is parallel to plane z0 y.
According to the semiconductor laser packaging structure provided by the embodiment of the invention, the groove is formed in one surface of the heat sink, the semiconductor laser tube core is welded and fixed with the heat sink through the solder, and the ridge area of the semiconductor laser tube core is vertically above the groove.
A second aspect of the embodiment of the present invention provides a method for manufacturing a semiconductor laser package structure, including the steps of:
step S1, forming a groove on the first surface of the heat sink. In a particular embodiment, the metal or ceramic heat sink 10 is machined to form the recess using a laser etching or chemical etching process.
And S2, forming a solder layer on the first surface. In a specific embodiment, indium-containing multi-eutectic metals are employed as the solder layer 20. Indium has a melting point of 157 ℃, and indium-containing solders have a lower melting point and good wettability.
Step S3, disposing a semiconductor laser die on the solder layer. The ridge region of the semiconductor laser die is disposed vertically above the recess, and the ridge region is disposed proximate to the solder layer. In a specific embodiment, the positional alignment of the semiconductor laser die 30 is performed after the indium-containing solder layer 20 solidifies.
Step S4, the solder layer is melted such that the semiconductor laser die is fixed on the first surface. In a particular embodiment, heating the solder layer 20 causes the solder to melt and resolidify to complete the securement between the semiconductor laser die 30 and the heat sink 10.
As an alternative embodiment, the projection of the ridge area onto the heat sink is within the opening of the recess. In a specific embodiment, the ridge 31 is projected in the center of the groove 11.
As an alternative embodiment, the solder layer is prepared by a thermal evaporation or electron beam evaporation process.
As an alternative embodiment, the solder layer is melted by resistive heating or electron beam heating.
According to the semiconductor laser packaging structure provided by the embodiment of the invention, the groove is formed in one surface of the heat sink, the semiconductor laser tube core is welded and fixed with the heat sink through the solder, and the ridge area of the semiconductor laser tube core is vertically above the groove.
Although embodiments of the present invention have been described in connection with the accompanying drawings, various modifications and variations may be made by those skilled in the art without departing from the spirit and scope of the invention, and such modifications and variations are within the scope of the invention as defined by the appended claims.
Claims (9)
1. A semiconductor laser package structure, comprising: a heat sink (10), a solder layer (20) formed on a first surface of the heat sink (10), and a semiconductor laser die (30) soldered to the first surface by the solder layer (20), a ridge region (31) of the semiconductor laser die (30) being disposed proximate to the solder layer (20);
wherein,
a groove (11) is formed in the first surface, and the length direction of the groove (11) is parallel to the length direction of the ridge region (31); and the ridge region (31) is arranged vertically above the groove (11);
the projection of the ridge (31) onto the heat sink (10) is in the opening of the recess (11).
2. The semiconductor laser package structure according to claim 1, wherein the width of the recess (11) is larger than the width of the ridge region (31).
3. The semiconductor laser package structure according to claim 1 or 2, wherein at least one end face of the semiconductor laser die (30) perpendicular to the length direction of the ridge region (31) is flush with at least one end face of the heat sink (10) perpendicular to the length direction of the groove (11).
4. The semiconductor laser package structure according to claim 1, wherein the depth of the groove (11) is not smaller than the height of the ridge region (31).
5. The semiconductor laser package structure according to claim 1, wherein a plane formed by the axial center line of the ridge region (31) and the axial center line of the groove (11) is perpendicular to the first surface.
6. A method of manufacturing a semiconductor laser package according to any one of claims 1 to 5, comprising the steps of:
forming a groove (11) on a first surface of a heat sink (10);
forming a solder layer (20) on the first surface;
-providing a semiconductor laser die (30) on the solder layer (20), a ridge region (31) of the semiconductor laser die (30) being provided vertically above the recess (11), and the ridge region (31) being provided close to the solder layer (20);
the solder layer (20) is melted such that the semiconductor laser die (30) is secured to the first surface.
7. The method of manufacturing according to claim 6, characterized in that the projection of the ridge (31) on the heat sink (10) is within the opening of the recess (11).
8. The method of manufacturing according to claim 6, characterized in that the solder layer (20) is manufactured by a thermal evaporation or electron beam evaporation process.
9. The method of manufacturing according to claim 6, characterized in that the solder layer (20) is melted by resistance heating or electron beam heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711203984.3A CN107749561B (en) | 2017-11-27 | 2017-11-27 | Semiconductor laser packaging structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711203984.3A CN107749561B (en) | 2017-11-27 | 2017-11-27 | Semiconductor laser packaging structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107749561A CN107749561A (en) | 2018-03-02 |
| CN107749561B true CN107749561B (en) | 2024-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711203984.3A Active CN107749561B (en) | 2017-11-27 | 2017-11-27 | Semiconductor laser packaging structure and preparation method thereof |
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| Country | Link |
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| CN (1) | CN107749561B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638639A (en) * | 2018-12-14 | 2019-04-16 | 苏州矩阵光电有限公司 | A kind of semiconductor laser chip and preparation method thereof |
| CN112103766A (en) * | 2020-08-13 | 2020-12-18 | 长春理工大学 | Transitional heat sink structure for packaging semiconductor laser and use method thereof |
| CN115290946B (en) * | 2022-09-29 | 2022-12-30 | 深圳市道格特科技有限公司 | Precise bonding structure of probe, welding method and probe card |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1960091A (en) * | 2005-11-01 | 2007-05-09 | 中国科学院半导体研究所 | Tube core cell structure of gallium - arsenic based quanta cascaded laser, and fabricating method |
| CN101488547A (en) * | 2008-12-30 | 2009-07-22 | 上海蓝光科技有限公司 | LED chip construction and manufacturing method thereof |
| CN202268386U (en) * | 2011-09-27 | 2012-06-06 | 深圳市极佳光电科技有限公司 | LED (Light Emitting Diode) packaging structure |
| CN102882124A (en) * | 2012-10-11 | 2013-01-16 | 长春理工大学 | Semiconductor laser chip structure suitable for being welded reversely |
| CN104362507A (en) * | 2014-11-25 | 2015-02-18 | 中国科学院半导体研究所 | Quantum cascaded laser device structure capable of dissipating heat from double faces |
| CN104600175A (en) * | 2014-12-18 | 2015-05-06 | 上海大学 | Flip LED (light-emitting diode) substrate component and flip LED packaging component |
| CN104600176A (en) * | 2014-12-18 | 2015-05-06 | 上海大学 | Flip LED (light-emitting diode) substrate structure |
| CN105027368A (en) * | 2013-03-05 | 2015-11-04 | 株式会社藤仓 | Semiconductor laser module and production method for same |
| CN207801151U (en) * | 2017-11-27 | 2018-08-31 | 苏州矩阵光电有限公司 | A kind of capsulation structure for semiconductor laser |
-
2017
- 2017-11-27 CN CN201711203984.3A patent/CN107749561B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1960091A (en) * | 2005-11-01 | 2007-05-09 | 中国科学院半导体研究所 | Tube core cell structure of gallium - arsenic based quanta cascaded laser, and fabricating method |
| CN101488547A (en) * | 2008-12-30 | 2009-07-22 | 上海蓝光科技有限公司 | LED chip construction and manufacturing method thereof |
| CN202268386U (en) * | 2011-09-27 | 2012-06-06 | 深圳市极佳光电科技有限公司 | LED (Light Emitting Diode) packaging structure |
| CN102882124A (en) * | 2012-10-11 | 2013-01-16 | 长春理工大学 | Semiconductor laser chip structure suitable for being welded reversely |
| CN105027368A (en) * | 2013-03-05 | 2015-11-04 | 株式会社藤仓 | Semiconductor laser module and production method for same |
| CN104362507A (en) * | 2014-11-25 | 2015-02-18 | 中国科学院半导体研究所 | Quantum cascaded laser device structure capable of dissipating heat from double faces |
| CN104600175A (en) * | 2014-12-18 | 2015-05-06 | 上海大学 | Flip LED (light-emitting diode) substrate component and flip LED packaging component |
| CN104600176A (en) * | 2014-12-18 | 2015-05-06 | 上海大学 | Flip LED (light-emitting diode) substrate structure |
| CN207801151U (en) * | 2017-11-27 | 2018-08-31 | 苏州矩阵光电有限公司 | A kind of capsulation structure for semiconductor laser |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107749561A (en) | 2018-03-02 |
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