CN107749441B - 一种低温下具有阈值电阻转变功能的材料及其制备方法 - Google Patents
一种低温下具有阈值电阻转变功能的材料及其制备方法 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
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- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 238000005240 physical vapour deposition Methods 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 230000006870 function Effects 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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Abstract
本发明公开了一种低温下具有阈值电阻转变功能的材料及制备方法,具有多层堆叠的三维结构,自下而上分别为铝质背电极层、p型重掺杂硅片层、氮化硅层、金属上电极层。本发明采用硅基材料,与传统CMOS集成电路工艺相兼容;将SiN材料组装成器件Ag/SiN/p‑Si/Al,器件Ag/SiN/p‑Si/Al在210K的温度下,具有典型的阈值电阻转变特征。
Description
技术领域
本发明属于超大规模集成电路技术领域,特别是涉及一种低温下具有阈值电阻转变功能的材料及其制备方法。
背景技术
电阻转变效应可以分为记忆电阻转变和阈值电阻转变两种。在记忆电阻转变效应中,器件的高阻态和低阻态在零偏压下均可以在保持稳定状态,因此这种效应可以应用于非挥发性存储器件。然而,对于低温下的阈值电阻转变效应,只有高阻态在零偏压下能保持稳定,只能应用于挥发性存储器(如动态随机存储器)。本领域内,低温一般是指室温至液氮的温度,通常在300k-77k。
阈值电阻转变是基于材料在外加电场的作用下发生高阻态与低阻态的相互转变,而非基于电荷的存储,机理的不同使得基于阈值电阻转变的材料可不受特征尺寸减小的不利影响,反而可以提高器件的存储密度。
基于阈值电阻转变效应的存储器,具有结构简单、存储密度高、读写速度快等特点,与阻变存储器具有类似的优点,是下一代挥发性存储器的候选者。
挥发性存储器目前存在的主要问题为:随着特征尺寸的的持续缩小,存在电荷泄露的风险,导致可靠性的降低;另外,对于已报道的具有阈值电阻转变的材料,集中于过渡族金属氧化物,氧化镍、氧化钽、氮化铝、氧化锰,利用传统CMOS集成电路工艺应用时需购买相应靶材,提高了制造成本。
发明内容
本发明的目的是提供一种低温下具有阈值电阻转变功能的材料及其制备方法。
为实现第一个目的,本发明采用的技术方案是这样的:一种低温下具有阈值电阻转变功能的材料,具有多层堆叠的三维结构,其特征在于:自下而上分别为铝质背电极层、p型重掺杂硅片层、氮化硅层、金属上电极层。
优选的方案是,金属上电极层为银电极,形状为圆形,直径小于500µm。
为实现第二个目的,本发明采用的技术方案是这样的:一种低温下具有阈值电阻转变功能材料的制备方法,包括以下步骤:
1)选用电阻率低于0.001Ω∙cm,厚度小于750µm的p型重掺杂硅片,进行标准RCA清洗;
2)在清洗后的硅片正面上利用物理气相沉积法或化学气相沉积法氮化硅层,沉积厚度10-100 nm;
3)利用光刻工艺或者金属掩膜版定义上电极尺寸和形貌,利用物理气相沉积法沉积上电极;
4)利用物理气相沉积法在步骤1)的硅片背面沉积铝电极,厚度为100-500 nm,快速热退火,形成欧姆接触。
本发明采用硅基材料,与传统CMOS集成电路工艺相兼容;将SiN材料组装成器件Ag/SiN/p-Si/Al,器件Ag/SiN/p-Si/Al在210K的温度下,具有典型的阈值电阻转变特征。
附图说明
以下结合附图和本发明的实施方式来作进一步详细说明
图1是实施例的产品截面图;
图2是实施例的方法框图;
图3是实施例的测试结果图。
图中标记为:铝质背电极层1、p型重掺杂硅片层2、氮化硅层3、金属上电极层4。
具体实施方式
参见附图。本实施例所述的材料具有多层堆叠的三维结构,自下而上分别为铝质背电极层1、p型重掺杂硅片层2、氮化硅层3、金属上电极层4。金属上电极层4为银电极,也可以用铝、铜、金、铂等金属材料,形状为圆形,直径小于500µm。
如图2所示,本实施例所述材料的制备方法,包括以下步骤:
1)选用电阻率低于0.001Ω∙cm,厚度小于750µm的p型重掺杂硅片2,进行标准RCA清洗;
2)在清洗后的硅片正面上利用物理气相沉积法或化学气相沉积法氮化硅层3,沉积厚度10-100 nm;
3)利用光刻工艺或者金属掩膜版定义上电极尺寸和形貌,利用物理气相沉积法沉积上电极,形成金属上电极层4;
4)利用物理气相沉积法在步骤1)的硅片背面沉积铝电极,厚度为100-500 nm,快速热退火,形成欧姆接触,得到铝质背电极层1。
Claims (3)
1.一种在300k-77k低温下具有阈值电阻转变功能的动态存储器,具有多层堆叠的三维结构,其特征在于:自下而上分别为铝质背电极层、p型重掺杂硅片层、氮化硅SiN层、金属上电极层。
2.如权利要求1所述的一种在300k-77k低温下具有阈值电阻转变功能的动态存储器,其特征在于:金属上电极层为银电极,形状为圆形,直径小于500μm。
3.一种权利要求1所述动态存储器的制备方法,包括以下步骤:
1)选用电阻率低于0.001Ω.cm,厚度小于750μm的p型重掺杂硅片,进行标准RCA清洗;
2)在清洗后的硅片正面上利用物理气相沉积法或化学气相沉积法氮化硅SiN层,沉积厚度10-100nm;
3)利用光刻工艺或者金属掩膜版定义上电极尺寸和形貌,利用物理气相沉积法沉积上电极;
4)利用物理气相沉积法在步骤1)的硅片背面沉积铝电极,厚度为100-500nm,快速热退火,形成欧姆接触。
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US5534711A (en) * | 1991-01-18 | 1996-07-09 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
CN101281953A (zh) * | 2008-04-29 | 2008-10-08 | 北京大学 | 一种具有稳定阻变特性的材料及阻变存储器 |
CN102244196A (zh) * | 2011-06-21 | 2011-11-16 | 南京大学 | 一种有序可控纳米硅量子点阵列阻变存储器及其制备方法 |
CN105932154A (zh) * | 2016-05-17 | 2016-09-07 | 浙江师范大学 | 具有稳定阈值电阻转变特性的材料以及动态随机存储器件 |
CN105977379A (zh) * | 2016-05-17 | 2016-09-28 | 浙江师范大学 | 一种碳氧化硅薄膜及阻变存储器 |
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US5534711A (en) * | 1991-01-18 | 1996-07-09 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
CN101281953A (zh) * | 2008-04-29 | 2008-10-08 | 北京大学 | 一种具有稳定阻变特性的材料及阻变存储器 |
CN102244196A (zh) * | 2011-06-21 | 2011-11-16 | 南京大学 | 一种有序可控纳米硅量子点阵列阻变存储器及其制备方法 |
CN105932154A (zh) * | 2016-05-17 | 2016-09-07 | 浙江师范大学 | 具有稳定阈值电阻转变特性的材料以及动态随机存储器件 |
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