CN107748313A - Based on or logic identification HBSM MMC internal short circuit faults method - Google Patents
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Abstract
The invention discloses a kind of based on "AND", the identification HBSM MMC internal short circuit fault methods of "or" logic, the described method comprises the following steps：(1) n-th of HBSM state S is monitoredn；(2) n-th of HBSM capacitance voltage u is monitoredcn, calculate its capacitance current icn；(3) n HBSM of calculating capacitance current and the ratio λ of bridge arm currentn；(4) threshold value K is defined, works as λnDuring >=K, β is rememberedn=1；Work as λn<During K, β is rememberedn=0；(5) S is worked asnWhen=1, S is madenAnd βn"AND" is carried out, represents "AND" with " * ", and define ρn1=Sn*βn；Work as SnWhen=0, S is madenAnd βn"or" is carried out, represents "or" with "+", and define ρn2=Sn+βn, ρn1=ρn2=0, illustrate short trouble does not occur inside n-th of HBSM.Computational methods that the present invention uses are easy, and result of calculation form is simple, and only 0 and 1 two kind of form, it is possible to achieve quick, accurate, failure in HBSM MMC is identified and positioned using less parameter.
Description
Technical Field
The invention belongs to the technical field of internal protection configuration of an HBSM-MMC body, and particularly relates to a method for identifying an internal short-circuit fault of the HBSM-MMC based on AND logic and OR logic.
Background
A Modular Multilevel Converter (MMC) is a novel topological structure based on Voltage-source converter based direct current (VSC-HVDC) transmission. With the rapid development of power electronic devices such as Insulated Gate Bipolar Transistors (IGBTs), MMCs are increasingly widely used worldwide. Compare with traditional two level or three-level VSC topological structure, MMC can reduce device switching frequency, reduces the voltage change rate and the current change rate of device, and then reduces the loss and the voltage-sharing degree of difficulty of device.
The submodule is the most critical component in the MMC topology, not only plays a role of supporting direct-current voltage by a capacitor at the direct-current side of the two-level converter, but also determines the waveform quality of output voltage at the alternating-current side of the converter through a switch of a full-control device in the submodule, so that the submodule is a power unit in the MMC. Rainer Marquardt introduced the concept of generalized MMC on two power electronic conferences in 2010 and 2011, and divided the Sub-modules into Half-Bridge Sub-modules (HBSM), full-Bridge Sub-modules (FBSM), and Double-clamped Sub-modules (CDSM). Among them, MMC (abbreviated as HBSM-MMC) based on half-bridge submodule HBSM is the most commonly used in engineering practice, so the invention mainly researches the condition of short-circuit fault in HBSM-MMC.
The short circuit in the HBSM-MMC can cause a bridge arm to generate larger current conversion, and the normal operation of the system is influenced, so that the short circuit fault in the HBSM-MMC can be quickly and accurately identified and positioned, and corresponding protection is started very necessary.
At present, few documents are available for researching a short-circuit fault recognition method in HBSM-MMC at home and abroad, and Wangwang and the like (Wangwang, huan, dongyong and the like; IGBT voltage breakdown characteristic analysis [ J ]. The report on the electro-technical science, 2011,26 (8): 145-150) analyze an IGBT overvoltage breakdown mechanism, but do not analyze the fault characteristic after breakdown; the mechanism of IGBT short-circuit protection is studied in Suzhou et al (Suzhou, same direction, front, high power IGBT protection mechanism analysis [ J ]. Electric drive, 2015,45 (3): 77-80.), but no corresponding solution is available; chen Xinkun et al (Chen Xinkun, chen Xin, congyun, etc.. A design [ J ] of a novel IGBT short-circuit protection circuit and an automation and instrumentation instrument, 2003, 45-47.) propose a method for directly detecting the occurrence of short-circuit fault of IGBT in H bridge, and provide a corresponding IGBT short-circuit protection circuit on the basis of analyzing the IGBT short-circuit detection principle in detail, but the short-circuit of IGBT in H bridge and the short-circuit fault characteristic of IGBT in HBSM have difference, so the scheme can not be directly used for identifying the short-circuit of IGBT in HBSM; sang Zixia et al (san Zixia, mao Chengxing, liu Jiming, et al. Analysis and simulation of failure characteristics of power switch failures in distribution electronics power transformers [ J ]. Energies,2013,6 (8): 4246-4268) have carried out fault characteristic analysis on IGBT short-circuit faults in cascaded H-bridge type power electronic transformers, but no corresponding protection scheme is given, and the fault characteristic analysis cannot be directly used for MMC.
Therefore, a method which is faster and more accurate and has fewer used parameters is needed to be found to identify and locate the short-circuit fault in the HBSM-MMC, and research results can be used as beneficial supplement of short-circuit fault diagnosis in the existing HBSM-MMC, so that the method is beneficial to improving the rapidity and the reliability of internal protection of the HBSM-MMC body.
Disclosure of Invention
The invention provides an internal short-circuit fault identification method of an HBSM-MMC based on AND logic, which can quickly and accurately identify the HBSM and a power electronic device with an open-circuit fault and is mainly technically characterized in that the working state of the HBSM and the ratio of capacitance current to bridge arm current in the HBSM are subjected to AND or OR, so that the internal short-circuit fault of the HBSM can be quickly and accurately identified and positioned. The following definitions are first made.
(1) Defining working states of HBSM
By using S n The working state of the nth HBSM is represented and specified as follows:
wherein n =1,2 \ 8230and 2N, N is the cascade HBSM number of the upper and lower bridge arms.
(2) Defining the ratio of HBSM capacitance current to bridge arm current:
the calculation formula of the capacitance current of the nth HBSM is as follows:
wherein i cn Is the capacitance current of the nth HBSM, u cn Is the capacitance voltage of the nth HBSM, C n The capacitance value of the nth HBSM.
Lambda is used for the ratio of the nth HBSM capacitance current to the bridge arm current n Represents, i.e.:
when the normal work is carried out: when S is n If =1, it indicates that the nth HBSM is in the on state and the output voltage is the capacitance voltage u cn The capacitor current is equal to the bridge arm current, i.e. i arm ＝i cn ，λ n =1; when S is n If =0, it indicates that the nth HBSM is in the off state, the output voltage is 0, and the capacitance current i cn ＝0，λ n ＝0。
(3) For T N1 Or D N1 The fault characteristic analysis is carried out on the short-circuit condition:
when T is N1 Or D N1 After short circuit, S is generated n =0, i.e. T N2 When the bridge is in a conducting state, bridge arm straight-through of the sub-modules can be formed between circuits. At this time, the sub-module capacitor will discharge rapidly to cause the capacitor voltage to drop rapidly, the capacitor discharge current is much larger than the bridge arm current,β n ＝1，ρ 2 ＝S n +β n ＝1。
(4) For T N2 Or D N2 The fault characteristic analysis is carried out on the short-circuit condition:
when T is N2 Or D N2 After short circuit, S is caused n 1, i.e. T N1 When the circuit is in a conducting state, bridge arm straight-through of the sub-modules can be formed among the circuits. At the moment, the sub-module capacitor can discharge rapidly to cause the capacitor voltage to drop rapidly, the capacitor discharge current is far larger than the bridge arm current,β n ＝1，ρ 1 ＝S n *β n ＝1。
(5) For T N2 、D N2 And T N1 、D N1 And analyzing the fault characteristics under the condition that short circuit occurs in the middle or the sub-module capacitor occurs in the middle:
at this time, no matter S n In which state, bridge arm direct connection is formed between circuits, the capacitor is rapidly discharged, and the discharge current is far greater than bridge arm current, rho 1 ＝S n *β n ＝1，ρ 2 ＝S n +β n ＝1。
On the basis of the above description, the present invention provides a method for identifying internal short-circuit fault of HBSM-MMC based on AND or logic, which is characterized by comprising the following steps:
(1): monitoring status S of nth HBSM n ；
(2): monitoring the capacitance voltage u of the nth HBSM cn Calculating the capacitance current thereofi cn ；
(3): calculating the ratio lambda of the capacitance current and the bridge arm current of the nth HBSM n ；
(4): defining a threshold value K when λ n When K is more than or equal to K, note beta n =1; when lambda is n &When it is K, note beta n ＝0；
(5): when S is n If =1, let S n And beta n AND, ANDing AND with "+", and defining p n1 ＝S n *β n (ii) a When S is n If =0, let S n And beta n Performing an OR, representing an OR by "+", and defining p n2 ＝S n +β n 。ρ n1 ＝ρ n2 =0, which indicates that no short circuit fault occurs inside the nth HBSM; when ρ n1 =1, the state of the submodule is changed immediately, i.e. from S n State change to S =1 n State of =0, at this time if ρ n2 =0, meaning only T N2 Or D N2 A short circuit occurs; if ρ n2 =1, explanation T N2 、D N2 And T N1 、D N2 The short circuit occurs in the middle or the short circuit occurs in the sub-module capacitor; in the same way, when rho n2 When =1, the state of the submodule is changed immediately, i.e. from S n State of =0 switching to S n State of 1, if at this time ρ n1 =0, meaning only T N1 Or D N1 A short circuit occurs; if ρ n1 =1, description T N2 、D N2 And T N1 、D N2 There is a short circuit in the middle or the sub-module capacitor.
Further, the status of the nth HBSM in step (1) is S n The working state of the nth HBSM is represented and specified as follows:
wherein n =1,2 \ 8230and 2N, N is the cascade HBSM number of the upper and lower bridge arms.
Further, the current calculation formula of the capacitance of the nth HBSM in step (2) is:
wherein i cn Current of the capacitance of the nth HBSM u cn Is the capacitance voltage of the nth HBSM, C n The capacitance value of the nth HBSM.
Further, in the step (3), the ratio of the capacitance current of the nth HBSM to the bridge arm current is used as lambda n Represents, i.e.:
when the normal work is carried out: when S is n If =1, it means that the nth HBSM is in the on state and the output voltage is the capacitance voltage u thereof cn The capacitor current is equal to the bridge arm current, i.e. i arm ＝i cn ，λ n =1; when S is n If =0, it means that the nth HBSM is in the cut-off state, the output voltage is 0, and the capacitance current i cn ＝0，λ n ＝0。
Further, the threshold value K in step (4) is a sub-module capacitance current threshold value K.
Further, in the step (5), T is treated N1 Or D N1 The short-circuit condition of (2) is analyzed for fault characteristics when T N1 Or D N1 After short circuit, S is caused n =0, i.e. T N2 When the sub-module is in a conducting state, bridge arm through-connections of the sub-modules can be formed between circuits, at the moment, sub-module capacitors can be rapidly discharged to cause capacitor voltage to rapidly drop, capacitor discharge current is far larger than bridge arm current,β n ＝1，ρ n2 ＝S n +β n ＝1。
further, in the step (5), T is treated N2 Or D N2 Is subjected to fault characteristic classificationWhen T is N2 Or D N2 After short circuit, it will cause S to be in n =1, i.e. T N1 When the circuit is in a conducting state, bridge arm through connection of the sub-module is formed between the circuits, at the moment, the sub-module capacitor can be rapidly discharged to cause the capacitor voltage to rapidly drop, the capacitor discharge current is far larger than the bridge arm current,β n ＝1，ρ n1 ＝S n *β n ＝1。
further, in the step (5), T is treated N2 、D N2 And T N1 、D N1 The fault characteristic analysis is carried out under the condition that short circuit occurs in the sub-module capacitor or the short circuit occurs in the sub-module capacitor, and at the moment, no matter S n In which state, bridge arm direct connection is formed between circuits, the capacitor is rapidly discharged, and the discharge current is far greater than bridge arm current, rho n1 ＝S n *β n ＝1，ρ n2 ＝S n +β n ＝1。
The method has the advantages that the adopted calculation method is simple and convenient, the calculation result form is simple, only two forms of 0 and 1 are provided, and the fault in the HBSM-MMC can be quickly and accurately identified and positioned by using fewer parameters.
Drawings
FIG. 1 is a system diagram of a simulation model of the method of the present invention.
Fig. 2 is a schematic flow chart of an HBSM-MMC internal short-circuit fault identification method based on and logic or logic in the embodiment of the present invention.
FIG. 3 is an index ρ of short-circuited IGBT in the 3 rd HBSM according to the embodiment of the present invention 31 、ρ 32 And S 3 Schematic representation of (a).
FIG. 4 is an index ρ of short-circuited two IGBTs in the 3 rd HBSM according to the embodiment of the present invention 31 、ρ 32 And S 3 Schematic illustration of (a).
Detailed Description
The technical scheme of the invention is further explained by combining the attached drawings.
A simulation model for the method for identifying an IGBT open-circuit fault in an HBSM-MMC is shown in fig. 1, and fig. 2 is a flowchart for identifying a short-circuit fault in an HBSM by using the method. The invention provides a method for identifying an IGBT short-circuit fault in an HBSM-MMC based on AND logic or logic, which can quickly and accurately identify and locate the HBSM and a power device which have faults, and the specific process of the scheme is as follows:
(1) Monitoring status S of nth HBSM n ：
By using S n The working state of the nth HBSM is shown and specified as follows:
wherein n =1,2 \8230and2N, N is the cascade HBSM number of the upper and lower bridge arms.
(2) Monitoring the capacitance voltage u of the nth HBSM cn Calculating the capacitance current i thereof cn ：
The capacitance current of the nth HBSM is calculated by the formula:
wherein i cn Capacitance current of nth HBSM, u cn Is the capacitance voltage of the nth HBSM, C n The capacitance value of the nth HBSM.
(3) Calculating the ratio of the capacitance current and the bridge arm current of the nth HBSM by using lambda n Represents, i.e.:
(4) Defining a threshold value K when λ n When K is greater than or equal to K, note beta n =1; when lambda is n &When it is K, note beta n ＝0；
(5) When S is n If =1, let S n And beta n AND, ANDing AND with "+", and defining p n1 ＝S n *β n (ii) a When S is n When =0, let S n And beta n Performing an OR, representing an OR by a "+", and defining ρ n2 ＝S n +β n 。ρ n1 ＝ρ n2 =0, which indicates that no short circuit fault occurs inside the nth HBSM; when ρ n1 =1, the state of the submodule is changed immediately, i.e. from S n State switch of =1 to S n State, if ρ n2 =0, meaning only T N2 Or D N2 A short circuit occurs; if ρ n2 =1, explanation T N2 、D N2 And T N1 、D N1 The short circuit occurs in the middle or the short circuit occurs in the sub-module capacitor; in the same way, when rho n2 When =1, the state of the submodule is changed immediately, i.e. from S n State switch of =0 to S n State, if ρ n1 =0, meaning only T N1 Or D N1 A short circuit occurs; if ρ n1 =1, description T N2 、D N2 And T N1 、D N1 There is a short circuit in the middle or the sub-module capacitor.
The technical solution of the present invention is further described below by two specific examples.
Suppose T in the 3 rd HBSM for the A phase upper leg in FIG. 1 13 Short-circuit fault occurs at time t =1s, and p is caused after fault 32 =1, as can be seen again in fig. 3, fault time S 3 (= 0) when ρ 32 After a transition from 0 to 1, S 3 Immediately changes from 0 to 1, after which ρ is found 31 =0, meaning only T 13 A short circuit occurs.
Similarly, assume T in HBSM 3 of the phase A upper leg in FIG. 1 13 、T 23 Short-circuit faults occur at the time t =1S, and the fault time S 3 Not =0, so what becomes 1 first isρ 32 When S is 3 After changing from 0 to 1, ρ 31 Changing from 0 to 1, T is illustrated 13 、T 23 A short circuit occurs.
Note: in the invention, when rho occurs after the fault occurs n1 、ρ n2 Will remain at 1 after 1 and the status of the sub-module after failure will be forced to switch, S n The value of (d) will also remain unchanged.
According to simulation results, the novel method for identifying the short-circuit fault in the HBSM-MMC based on the AND logic and the OR logic can realize the rapid and accurate identification and positioning of the short-circuit fault in the HBSM-MMC under the condition of using less parameters. Therefore, the scheme meets the requirements of the system on the rapidity, the reliability and the practicability of the HBSM-MMC internal short-circuit fault identification.
While the invention has been described with reference to specific preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Therefore, the scope of the present invention shall be defined by the appended claims.
Claims (8)
1. A method for identifying short-circuit fault of IGBT in HBSM-MMC based on AND or logic is characterized by comprising the following steps:
(1) Monitoring status S of nth HBSM n ；
(2) Monitoring the capacitance voltage u of the nth HBSM cn Calculating the capacitance current i thereof cn ；
(3) Calculating the ratio lambda of the capacitance current of the nth HBSM to the bridge arm current n ；
(4) Defining a threshold value K when λ n When K is greater than or equal to K, note beta n =1; when lambda is n &When it is K, note beta n ＝0；
(5) When S is n If =1, let S n And beta n AND, ANDing AND with "+", and defining p n1 ＝S n *β n (ii) a When S is n If =0, let S n And beta n Performing an OR, representing an OR by a "+", and defining ρ n2 ＝S n +β n ，ρ n1 ＝ρ n2 =0, which indicates that no short circuit fault occurs inside the nth HBSM; when rho n1 When =1, the state of the submodule is changed immediately, i.e. from S n State change to S =1 n State of =0, at this time if ρ n2 =0, meaning only T N2 Or D N2 A short circuit occurs; if ρ n2 =1, explanation T N2 、D N2 And T N1 、D N1 The short circuit occurs in the middle or the short circuit occurs in the sub-module capacitor; in the same way, when rho n2 When =1, the state of the submodule is changed immediately, i.e. from S n State of =0 switching to S n State of 1, if at this time ρ n1 =0, meaning only T N1 Or D N1 A short circuit occurs; if ρ n1 =1, explanation T N2 、D N2 And T N1 、D N1 There is a short circuit in the middle or the sub-module capacitor.
2. The method of claim 1, wherein:
the state of the nth HBSM in the step (1) adopts S n The working state of the nth HBSM is represented and specified as follows:
wherein n =1,2 \8230and2N, N is the cascade HBSM number of the upper and lower bridge arms.
3. The method of claim 1, wherein:
the current calculation formula of the capacitor of the nth HBSM in the step (2) is as follows:
wherein i cn Current of the capacitance of the nth HBSM u cn Is the capacitance voltage of the nth HBSM, C n The capacitance value of the nth HBSM.
4. The method of claim 1, wherein:
in the step (3), the ratio of the capacitance current of the nth HBSM to the bridge arm current is lambda n To express, namely:
when in normal operation: when S is n If =1, it means that the nth HBSM is in the on state and the output voltage is the capacitance voltage u thereof cn The capacitive current is equal to the bridge arm current, i arm ＝i cn ，λ n =1; when S is n If =0, it means that the nth HBSM is in the cut-off state, the output voltage is 0, and the capacitance current i cn ＝0，λ n ＝0。
5. The method of claim 1, wherein:
and (4) the threshold value K is the submodule capacitor current threshold value K.
6. The method of claim 1, wherein:
in step (5), for T N1 Or D N1 The short-circuit condition of (2) is analyzed for fault characteristics when T N1 Or D N1 After short circuit, S is caused n =0, i.e. T N2 When the circuit is in a conducting state, bridge arm straight-through of the sub-module is formed between circuits, the capacitor of the sub-module can be rapidly discharged to cause the capacitor voltage to be rapidly reduced, the capacitor discharge current is far larger than the bridge arm current,β n ＝1，ρ n2 ＝S n +β n ＝1。
7. the method of claim 1, wherein:
in step (5), for T N2 Or D N2 The short-circuit condition of (2) is analyzed for fault characteristics when T N2 Or D N2 After short circuit, it will cause S to be in n =1, i.e. T N1 When the circuit is in a conducting state, bridge arm straight-through of the sub-module is formed between the circuits, at the moment, the sub-module capacitor can be rapidly discharged to cause the capacitor voltage to be rapidly reduced, the capacitor discharge current is far larger than the bridge arm current,β n ＝1，ρ n1 ＝S n *β n ＝1。
8. the method of claim 1, wherein:
in step (5), for T N2 、D N2 And T N1 、D N1 The fault characteristic analysis is carried out under the condition that short circuit occurs in the sub-module capacitor or the short circuit occurs in the sub-module capacitor, and at the moment, no matter S n In which state, bridge arm direct connection is formed between circuits, the capacitor is rapidly discharged, and the discharge current is far greater than bridge arm current, rho n1 ＝S n *β n ＝1，ρ n2 ＝S n +β n ＝1。
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| CN109510491A (en) * | 2018-10-31 | 2019-03-22 | 中国电力科学研究院有限公司 | A kind of short-circuit recognition method and device of MMC full-bridge submodule IGBT |
| CN109541377A (en) * | 2019-01-08 | 2019-03-29 | 华北电力大学 | A kind of new method of the inside diagnosis HBSM IGBT open-circuit fault |
| CN111781484A (en) * | 2020-06-19 | 2020-10-16 | 南京航空航天大学 | MMC loop structure based on IGBT sub-module and open-circuit fault diagnosis method |
| CN113933752A (en) * | 2021-09-09 | 2022-01-14 | 华中科技大学 | IGBT open-circuit fault detection method and device for cascaded H-bridge converter |
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| CN109541377A (en) * | 2019-01-08 | 2019-03-29 | 华北电力大学 | A kind of new method of the inside diagnosis HBSM IGBT open-circuit fault |
| CN111781484A (en) * | 2020-06-19 | 2020-10-16 | 南京航空航天大学 | MMC loop structure based on IGBT sub-module and open-circuit fault diagnosis method |
| CN113933752A (en) * | 2021-09-09 | 2022-01-14 | 华中科技大学 | IGBT open-circuit fault detection method and device for cascaded H-bridge converter |
| CN113933752B (en) * | 2021-09-09 | 2022-06-17 | 华中科技大学 | IGBT open-circuit fault detection method and device for cascaded H-bridge converter |
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