CN107743024A - Second-order low-pass filter circuit based on memristor - Google Patents
Second-order low-pass filter circuit based on memristor Download PDFInfo
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- CN107743024A CN107743024A CN201710962386.8A CN201710962386A CN107743024A CN 107743024 A CN107743024 A CN 107743024A CN 201710962386 A CN201710962386 A CN 201710962386A CN 107743024 A CN107743024 A CN 107743024A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
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Abstract
Second-order low-pass filter circuit based on memristor, is made up of diode 1N4148, electric capacity and resistance, and diode 1N4148 realizes Wien bridge circuit function, electric capacity and resistance composition RC oscillating circuits.Originally it is new to propose based on the diode Wien Bridge Circuit of FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor, the second-order low-pass filter circuit in analog circuit is realized, a kind of easy method and circuit are provided to study the FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor being made up of diode Wien bridge circuit.
Description
Technical field
This new basic circuit being related in analog circuit, it is based particularly on the second order tow pass analog filtered electrical of memristor
Road.
Background technology
Memristor is a kind of nonlinear circuit element, since the physical realizability report of FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor, base
Relatively broad research has been obtained in the various application circuits for changing memristor, particularly memristor chaos circuit, has utilized simple base
This circuit element carry out organic linking, it is easy to construct it is various be based on memristor, memristor has been used for the research of Chaos
Compare far-reaching influence through generating, but memristor is individually applied in analog circuit, realize the filter in signal transacting
Wave energy is also fewer at home and abroad, therefore, this new diode Wien Bridge Circuit proposed with FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor
Based on, realize the filter circuit in analog circuit, such as low-pass first order filter, second-order low-pass filter, high-pass filter,
Bandpass filter and all-pass filter, a kind of letter is provided to study the FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor being made up of diode Wien bridge circuit
Just method and circuit.
The content of the invention
1. the second-order low-pass filter circuit based on memristor, it is characterised in that:The step low-pass filter based on memristor
For wave circuit by resistance, electric capacity, memristor and operational amplifier LF347BN (U2) compositions, the memristor is FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor
Device, it is made up of diode Wien Bridge Circuit and electric capacity and resistance, electric capacity and resistance composition RC oscillating circuits;Diode D1 is just
Pole connects diode D4 positive pole, connects the input of memristor, and the negative pole of the diode D1 connects electric capacity C0 one end, connects diode
D2 negative pole, the positive pole of the diode D2 connect diode D3 negative pole, connect the output end of memristor, and the diode D2's is negative
Pole connects one end of electric capacity, and the negative pole of the diode D3 connects diode D2 positive pole, connects the output end of memristor, the diode
D3 positive pole connects diode D4 positive pole, connects the electric capacity C0 other end, and ground connection, the positive pole of the diode D4 connects diode D3's
Positive pole, the electric capacity C0 other end is connect, be grounded, the negative pole of the diode D4 connects diode D1 positive pole, connects the input of memristor
End, a terminating resistor R0 of electric capacity C0 one end, another terminating resistor R0 of the electric capacity C0 other end, ground connection;Root
Relationship below is drawn according to the circuit of diode Wien bridge circuit:It is respectively Vm to set broad sense memristor both ends input voltage and electric current
And Im, electric capacity C0Both end voltage is V0, its mathematical modeling is:
Wherein, ρ=1/ (2nVT);Is, n and VTDiode reverse saturation current, emission ratio and thermal voltage are represented respectively,
Thus, it is possible to derive that recalling for broad sense memristor leads expression formula and be
The negative input end of the operational amplifier LF347BN (U2) is grounded by resistance Ri2, and fortune is connect by memristor Rm2
Amplifier LF347BN (U2) output end is calculated, operational amplifier LF347BN (U2) positive input terminal passes through resistance R2 and resistance R3
The input of second-order low-pass filter is connect, is grounded by electric capacity C2, is grounded by resistance R2 and electric capacity C3, operational amplifier
LF347BN (U2) positive supply termination VCC, negative supply termination VEE;Drawn according to second-order low-pass filter circuit structure with ShiShimonoseki
It is formula:
If the transmission function of second-order low-pass filter is Au(s), the input voltage of second-order low-pass filter is Ui2, output electricity
Press as Uo2, operational amplifier U2 positive input terminal voltage is Up, the voltage on electric capacity C3 is UM,
According to computing circuit " empty short ", " void is disconnected " and Laplace transform principle are drawn:
Work as C2=C3=C, R2=R3During=R
S=j ω are made,
Beneficial effect:The present invention is proposed based on the diode Wien Bridge Circuit of FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor, is realized
Filter circuit in analog circuit, such as low-pass first order filter, second-order low-pass filter, high-pass filter, bandpass filter
And all-pass filter, for study the FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor that be made up of diode Wien bridge circuit provide a kind of easy method with
Circuit.
Brief description of the drawings
Fig. 1 is second-order low-pass filter circuit of the realization based on memristor.
Fig. 2 is the diode Wien Bridge Circuit for realizing FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor.
Embodiment
The present invention is further described in detail with preferred embodiment below in conjunction with the accompanying drawings, referring to Fig. 1-Fig. 2.
Second-order low-pass filter circuit based on memristor, it is characterised in that:The second-order low-pass filter based on memristor
Electric routing resistance, electric capacity, memristor and operational amplifier LF347BN (U2) compositions, the memristor is FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor,
It is made up of diode Wien Bridge Circuit and electric capacity and resistance, electric capacity and resistance composition RC oscillating circuits;Diode D1 positive pole
Diode D4 positive pole is connect, connects the input of memristor, the negative pole of the diode D1 connects electric capacity C0 one end, meets diode D2
Negative pole, the positive pole of the diode D2 connects diode D3 negative pole, connects the output end of memristor, the negative pole of the diode D2
One end of electric capacity is connect, the negative pole of the diode D3 connects diode D2 positive pole, meets the output end of memristor, the diode D3
Positive pole connect diode D4 positive pole, connect the electric capacity C0 other end, ground connection, the positive pole of the diode D4 is meeting diode D3 just
Pole, the electric capacity C0 other end being connect, be grounded, the negative pole of the diode D4 connects diode D1 positive pole, connects the input of memristor,
A terminating resistor R0 of electric capacity C0 one end, another terminating resistor R0 of the electric capacity C0 other end, ground connection;According to two
The circuit of pole pipe Wien bridge circuit draws relationship below:
Setting broad sense memristor both ends input voltage and electric current are respectively Vm and Im, electric capacity C0Both end voltage is V0, its mathematics
Model is:
Wherein, ρ=1/ (2nVT);Is, n and VTDiode reverse saturation current, emission ratio and thermal voltage are represented respectively,
Thus, it is possible to derive that recalling for broad sense memristor leads expression formula and be
The negative input end of the operational amplifier LF347BN (U2) is grounded by resistance Ri2, and fortune is connect by memristor Rm2
Amplifier LF347BN (U2) output end is calculated, operational amplifier LF347BN (U2) positive input terminal passes through resistance R2 and resistance R3
The input of second-order low-pass filter is connect, is grounded by electric capacity C2, is grounded by resistance R2 and electric capacity C3, operational amplifier
LF347BN (U2) positive supply termination VCC, negative supply termination VEE;Drawn according to second-order low-pass filter circuit structure with ShiShimonoseki
It is formula:
If the transmission function of second-order low-pass filter is Au(s), the input voltage of second-order low-pass filter is Ui2, output electricity
Press as Uo2, operational amplifier U2 positive input terminal voltage is Up, the voltage on electric capacity C3 is UM,
According to computing circuit " empty short ", " void is disconnected " and Laplace transform principle are drawn:
Work as C2=C3=C, R2=R3During=R
S=j ω are made,
Certainly, described above is not limitation to invention, and the present invention is also not limited to the example above, the art it is general
The variations, modifications, additions or substitutions that logical technical staff is made in the essential scope of the present invention, fall within the protection of the present invention
Scope.
Claims (1)
1. the second-order low-pass filter circuit based on memristor, it is characterised in that:The second-order low-pass filter electricity based on memristor
Routing resistance, electric capacity, memristor and operational amplifier LF347BN (U2) compositions, the memristor is FIRST ORDER GENERALIZED DISTRIBUTED PARAMETER memristor, by
Diode Wien Bridge Circuit and electric capacity and resistance composition, electric capacity and resistance composition RC oscillating circuits;Diode D1 positive pole connects
Diode D4 positive pole, connects the input of memristor, and the negative pole of the diode D1 connects electric capacity C0 one end, connects diode D2's
Negative pole, the positive pole of the diode D2 connect diode D3 negative pole, connect the output end of memristor, and the negative pole of the diode D2 connects
One end of electric capacity, the negative pole of the diode D3 connect diode D2 positive pole, connect the output end of memristor, the diode D3's
Positive pole connects diode D4 positive pole, connects the electric capacity C0 other end, and ground connection, the positive pole of the diode D4 is meeting diode D3 just
Pole, the electric capacity C0 other end being connect, be grounded, the negative pole of the diode D4 connects diode D1 positive pole, connects the input of memristor,
A terminating resistor R0 of electric capacity C0 one end, another terminating resistor R0 of the electric capacity C0 other end, ground connection;According to two
The circuit of pole pipe Wien bridge circuit draws relationship below:
Setting broad sense memristor both ends input voltage and electric current are respectively Vm and Im, electric capacity C0Both end voltage is V0, its mathematical modeling
For:
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Wherein, ρ=1/ (2nVT);Is, n and VTDiode reverse saturation current, emission ratio and thermal voltage are represented respectively, thus,
It can derive that recalling for broad sense memristor leads expression formula and be
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Big device LF347BN (U2) output end, operational amplifier LF347BN (U2) positive input terminal connect two by resistance R2 and resistance R3
The input of rank low pass filter, it is grounded, is grounded by resistance R2 and electric capacity C3, operational amplifier LF347BN by electric capacity C2
(U2) positive supply termination VCC, negative supply termination VEE;Relationship below is drawn according to second-order low-pass filter circuit structure:
If the transmission function of second-order low-pass filter is Au(s), the input voltage of second-order low-pass filter is Ui2, output voltage is
Uo2, operational amplifier U2 positive input terminal voltage is Up, the voltage on electric capacity C3 is UM,
According to computing circuit " empty short ", " void is disconnected " and Laplace transform principle are drawn:
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CN201710962386.8A CN107743024A (en) | 2016-05-30 | 2016-05-30 | Second-order low-pass filter circuit based on memristor |
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CN201610374235.6A CN106026969B (en) | 2016-05-30 | 2016-05-30 | First-order low-pass wave circuit based on memristor |
CN201710962386.8A CN107743024A (en) | 2016-05-30 | 2016-05-30 | Second-order low-pass filter circuit based on memristor |
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CN201710962386.8A Withdrawn CN107743024A (en) | 2016-05-30 | 2016-05-30 | Second-order low-pass filter circuit based on memristor |
CN201610374235.6A Active CN106026969B (en) | 2016-05-30 | 2016-05-30 | First-order low-pass wave circuit based on memristor |
CN201710959491.6A Withdrawn CN107612521A (en) | 2016-05-30 | 2016-05-30 | Single order high-pass filtering circuit based on memristor |
CN201710959497.3A Withdrawn CN107623506A (en) | 2016-05-30 | 2016-05-30 | All-pass wave filtering circuit based on memristor |
CN201710959716.8A Withdrawn CN107623505A (en) | 2016-05-30 | 2016-05-30 | Bandwidth-limited circuit based on memristor |
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CN201710959491.6A Withdrawn CN107612521A (en) | 2016-05-30 | 2016-05-30 | Single order high-pass filtering circuit based on memristor |
CN201710959497.3A Withdrawn CN107623506A (en) | 2016-05-30 | 2016-05-30 | All-pass wave filtering circuit based on memristor |
CN201710959716.8A Withdrawn CN107623505A (en) | 2016-05-30 | 2016-05-30 | Bandwidth-limited circuit based on memristor |
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Cited By (4)
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US11456418B2 (en) | 2020-09-10 | 2022-09-27 | Rockwell Collins, Inc. | System and device including memristor materials in parallel |
US11462267B2 (en) | 2020-12-07 | 2022-10-04 | Rockwell Collins, Inc. | System and device including memristor material |
US11469373B2 (en) | 2020-09-10 | 2022-10-11 | Rockwell Collins, Inc. | System and device including memristor material |
US11631808B2 (en) | 2020-12-07 | 2023-04-18 | Rockwell Collins, Inc. | System and device including memristor material |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN106712741A (en) * | 2017-01-07 | 2017-05-24 | 滨州学院 | Band-pass filter circuit based on memristor |
CN106788329A (en) * | 2017-01-07 | 2017-05-31 | 滨州学院 | All-pass wave filtering circuit based on memristor |
CN107241080A (en) * | 2017-05-15 | 2017-10-10 | 东南大学 | A kind of programmable iir filter analog hardware implementation method based on memristor |
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CN103731128A (en) * | 2013-12-23 | 2014-04-16 | 常州大学 | Memory resistance simulator with first-order diode bridge circuit |
CN104022864A (en) * | 2014-06-04 | 2014-09-03 | 常州大学 | Memristor chaotic signal generator implemented based on diode bridge |
CN104320098A (en) * | 2014-09-05 | 2015-01-28 | 常州大学 | A simple chua's chaotic circuit achieved by bridging generalized memristor |
CN104410485A (en) * | 2014-11-13 | 2015-03-11 | 常州大学 | A wien-brigde chaotic oscillator based on a firs-order generalized memory resistor |
CN104486064A (en) * | 2015-01-08 | 2015-04-01 | 常州大学 | Memory resistance chaotic signal producing circuit with self-excitation attractor and hidden attractor |
CN104796248B (en) * | 2015-03-18 | 2018-01-12 | 常州大学 | A kind of memristor chaotic signal generating device of MCLC types |
CN205986796U (en) * | 2016-05-30 | 2017-02-22 | 国网青海省电力公司海北供电公司 | Second order low pass filter circuit based on recall and hinder ware |
-
2016
- 2016-05-30 CN CN201710962386.8A patent/CN107743024A/en not_active Withdrawn
- 2016-05-30 CN CN201610374235.6A patent/CN106026969B/en active Active
- 2016-05-30 CN CN201710959491.6A patent/CN107612521A/en not_active Withdrawn
- 2016-05-30 CN CN201710959497.3A patent/CN107623506A/en not_active Withdrawn
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US11456418B2 (en) | 2020-09-10 | 2022-09-27 | Rockwell Collins, Inc. | System and device including memristor materials in parallel |
US11469373B2 (en) | 2020-09-10 | 2022-10-11 | Rockwell Collins, Inc. | System and device including memristor material |
US11462267B2 (en) | 2020-12-07 | 2022-10-04 | Rockwell Collins, Inc. | System and device including memristor material |
US11631808B2 (en) | 2020-12-07 | 2023-04-18 | Rockwell Collins, Inc. | System and device including memristor material |
Also Published As
Publication number | Publication date |
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CN107612521A (en) | 2018-01-19 |
CN106026969B (en) | 2017-12-22 |
CN107623506A (en) | 2018-01-23 |
CN106026969A (en) | 2016-10-12 |
CN107623505A (en) | 2018-01-23 |
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