CN107241080A - A kind of programmable iir filter analog hardware implementation method based on memristor - Google Patents
A kind of programmable iir filter analog hardware implementation method based on memristor Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H17/00—Networks using digital techniques
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H17/00—Networks using digital techniques
- H03H2017/0072—Theoretical filter design
- H03H2017/009—Theoretical filter design of IIR filters
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Abstract
The invention discloses a kind of programmable iir filter analog hardware implementation method based on memristor, comprise the following steps：(1) analog input signal is sampled using switched-capacitor circuit, obtains the digitized samples signal of analog input signal；(2) data signal of sampling is postponed using one period delay circuit, obtains the postpones signal of sandwich digit signal；(3) according to the Direct-type structure of iir filter, two parts circuit is set up using the cross matrix structure and adder of memristor, is exported respectively as feedback circuit and weighted sum；(4) resistance of memristor is selected and set, the setting of filter parameter is completed；Input analog signal to be filtered, filter signal is obtained in the output end of operational amplifier.Circuit programmable of the present invention, can reduce rounding error, the speed of filtering is not also limited by analog-digital converter, it is to avoid complicated multiplication is calculated, and all calculating be all it is parallel, can be for realizing the iir filter of high-order.
Description
Technical field
The present invention relates to memristor technical field, especially a kind of programmable iir filter simulation based on memristor is hard
Part implementation method.
Background technology
Memristor is the basic passive circuit component of the 4th kind be found in recent years.Although Leon Chua are early in 1971
Year, just prediction proposed its existence in theory, but until the hair of first physical model of HP Lab in 2008
It is existing, common concern of the memristor ability by the researcher of every field.After first physics mock-up is realized, Hen Duoling
Numerous researchers in domain realize its application in respective field using this device, mainly including computer science, nerveous system
The fields such as system science, neutral net, artificial intelligence, electronics science.The new features of memristor provide for the development in these fields
New thinking.
In field of signal processing, digital filter is often preferred analog filter.It only needs to software for editing can
To change the characteristic of digital filter, without the change of any hardware or the architecture of system.However, classical numeral
Signal processing system has two major limitations.First, the input signal of simulation needs discrete first by analog-digital converter progress
Change.Obviously, this enforceable analog-digital converter limits the processing speed of signal processing system.Second, any analog-to-digital conversion
Device is necessarily accompanied with quantization error, and this can significantly influence the accuracy of result.Except shortcomings noted above, in most of realities
In the digital information processing system on border, the method for adjustment filter parameter is to extract out by a part of system, weight
Installed back again in processing system after new program, tend not to simply send signal to change the characteristic of wave filter to system.
It can be changed it is, in general, that memristor can be considered as a kind of resistance by the voltage (or electric current) being applied to thereon
Resistance.Because the size of memristor can realize high density fabrication in Nano grade, the construction of its chi structure constituted, and
The energy that they consume is quite few, so this structure is popular in circuit design.Recently, several researchers have proposed one
A little programmable analog wave filters based on memristor.The main thought of these designs is to substitute conventional, electric-resistance using memristor, with
Electric capacity and inductance carry out the design of analog filter.This method can change wave filter by changing the resistance of memristor
Characteristic.This method is despite programmable, but the wave filter that designs of such a mode does not have the flexibility of height, it is impossible to meet
The flexibility demand much applied.All previous studies changed using the resistance of memristor is changed the quality of wave filter because
Element or bandwidth, but can not so change the intrinsic propesties of wave filter.For example, a low pass filter can not be by this
Method is changed to the bandpass filter with required feature in the case where being not required to modification system hardware.Therefore, one can change
The change filter design circuit for becoming filter characteristic without any hardware is to be badly in need of.Obviously, previous research can not expire
This requirement of foot.
The content of the invention
The technical problems to be solved by the invention are that there is provided a kind of programmable iir filter simulation based on memristor
Hardware Implementation, can reduce rounding error, and the speed of filtering is not also limited by analog-digital converter, realizes the IIR of high-order
Wave filter.
In order to solve the above technical problems, the present invention provides a kind of programmable iir filter analog hardware based on memristor
Implementation method, comprises the following steps：
(1) analog input signal is sampled using switched-capacitor circuit, obtains the digitized sampling letter of analog input signal
Number；
(2) data signal of sampling is postponed using one period delay circuit, obtains prolonging for sandwich digit signal
Slow signal；
(3) according to the Direct-type structure of iir filter, two are set up using the cross matrix structure and adder of memristor
Parallel circuit, is exported respectively as feedback circuit and weighted sum；
(4) resistance of memristor is selected and set, the setting of filter parameter is completed；Input analog signal to be filtered,
Filter signal is obtained in the output end of operational amplifier.
It is preferred that, in step (1), the grid voltage of the metal-oxide-semiconductor of switched-capacitor circuit at least needs to be more than mould in high level
Intend the maximum amplitude of input signal and the on state threshold voltage sum of metal-oxide-semiconductor；Using big breadth length ratio MOS device and small adopt
The parameter selection of sample capacitance, metal-oxide-semiconductor and electric capacity should be met for given cycle T, the time constant in voltage follow stage
RoutC maximum is much smaller than T, wherein, RoutFor the conducting resistance of metal-oxide-semiconductor, its resistance is
Wherein, VGSIt is consequently exerted at the voltage on metal-oxide-semiconductor grid；Other specification is the inner parameter of metal-oxide-semiconductor：μnMoved for electronics
Shifting rate, CoxFor the gate oxide capacitance of unit area, W/L is device breadth length ratio, VTHFor threshold voltage；The grid voltage of metal-oxide-semiconductor
It should select as the relatively small square-wave signal of dutycycle, the maximum amplitude of analog input signal needs to be limited in VGS/2。
It is preferred that, in step (4), the resistance of memristor is limited in RONAnd ROFFBetween, and the electric current by it should be caused
Less than threshold current, amplitude of the selection based on output signal of the feedback resistance of operational amplifier, which is equal in input signal, effectively to be believed
Number amplitude.
Beneficial effects of the present invention are：(1) filter factor is stored in the crossed array based on memristor, due to intersecting square
Memristor in battle array is directly adjusted, and then change its filter factor and filtering using peripheral resistance adjustment circuit to its resistance
Characteristic, so the present invention has programmable characteristic, without removing system；(2) compared to classical design, the present invention makes
With analog device, it is not necessary to which any processor performs corresponding difference equation in wave filter, it is not required that analog-digital converter comes
Quantization is performed, therefore reduces rounding error, the speed of filtering is not also limited by analog-digital converter；(3) multiplication of the invention
The electricity syntagmatic of memristor and operational amplifier is used to complete, it is to avoid complicated multiplication is calculated, and all calculating is all
Be it is parallel, can be for realizing the iir filter of high-order.
Brief description of the drawings
Fig. 1 is iir filter Direct-type way of realization schematic diagram of the invention.
Fig. 2 is switched-capacitor circuit structural representation of the invention.
Fig. 3 (a) is the sampling schematic diagram of the on-off circuit of the present invention.
Fig. 3 (b) is the holding capacity schematic diagram of the on-off circuit of the present invention.
Fig. 4 is the relation schematic diagram of voltage on the switching capacity input voltage, output voltage and metal-oxide-semiconductor grid of the present invention.
Fig. 5 is one period delay circuit unit schematic diagram of the invention.
Fig. 6 realizes control signal schematic diagrames at different levels for the use monostable flipflop of the present invention.
Fig. 7 obtains q [n-k], k=0 for the present invention's from analog input signal ..., N-1 schematic diagram.
Fig. 8 designs circuit diagram for the analog hardware of the programmable iir filter based on memristor of the present invention.
Fig. 9 realizes the schematic diagram of adder for the operational amplifier of the present invention.
Figure 10 is the memristor resistance adjustment circuit structural representation based on reference voltage of the invention.
Figure 11 is the sample circuit of the present invention and the control signal schematic diagram of each one period delay unit.
Figure 12 is the simulation result schematic diagram of the corresponding iir filter circuit of formula (6) of the present invention.
Figure 13 is the corresponding iir filter Matlab simulation result schematic diagrams of formula (6) of the invention.
Embodiment
A kind of programmable iir filter analog hardware implementation method based on memristor, comprises the following steps：
(1) analog input signal is sampled using switched-capacitor circuit, obtains the digitized sampling letter of analog input signal
Number；
(2) data signal of sampling is postponed using one period delay circuit, obtains prolonging for sandwich digit signal
Slow signal；
(3) according to the Direct-type structure of iir filter, two are set up using the cross matrix structure and adder of memristor
Parallel circuit, is exported respectively as feedback circuit and weighted sum；
(4) resistance of memristor is selected and set, the setting of filter parameter is completed；Input analog signal to be filtered,
Filter signal is obtained in the output end of operational amplifier.
It is preferred that, in step (1), the amplitude of the grid voltage of metal-oxide-semiconductor in high level is sufficiently large, must at least be more than simulation
The maximum amplitude of input signal and the on state threshold voltage sum of metal-oxide-semiconductor；In order to obtain higher sample rate, it is necessary to using big
The MOS device of breadth length ratio and small sampling capacitance value, moreover, the parameter selection of metal-oxide-semiconductor and electric capacity should be met for given
Cycle T, the time constant R in voltage follow stageoutC maximum is much smaller than T, wherein, RoutFor the conducting resistance of metal-oxide-semiconductor,
Its resistance is
Wherein, VGSIt is consequently exerted at the voltage on metal-oxide-semiconductor grid；Other specification is the inner parameter of metal-oxide-semiconductor：μnMoved for electronics
Shifting rate, CoxFor the gate oxide capacitance of unit area, W/L is device breadth length ratio, VTHFor threshold voltage；In order that sample circuit
Effectively work, the grid voltage of metal-oxide-semiconductor should be selected as the relatively small square-wave signal of dutycycle；In order that metal-oxide-semiconductor can be accurate
Ground transmits an input to output, and the time constant should be avoided too big, and the maximum amplitude of analog input signal needs to be limited in VGS/
2。
It is preferred that, the resistance selection of memristor can not be too small, otherwise can exceed that its threshold value electricity by the electric current of memristor
Pressure so that memristor resistance changes in filtering, and then causes filter property to change, influences filter effect；No
The resistance of memristor can infinitely be increased to obtain as far as possible small electric current.The resistance of memristor is also by device self property
Constraint, its resistance is limited in RONAnd ROFFBetween；The amplitude of the selection of the feedback resistance of operational amplifier based on output signal etc.
The amplitude of useful signal in input signal.
The unit impulse response h (k) of iir filter is the time series of an endless.Its time domain is as shown in formula (1)
Input and output difference equation：
A thereink0 will not be all.This wave filter realizes that structure is identical with general digital filter configuration.Its correspondence
Transfer function be：
Fig. 1 is the structured flowchart of formula of realizing (1) difference equation.Now, the number of delay unit is equal to the rank of difference equation
Number, is the minimum way of realization of delay unit, is also the less one kind of multiplication number of times.
Because the iir filter Direct-type way of realization shown in Fig. 1 takes full advantage of delay cell, and number is minimum, institute
So that based on this iir filter Direct-type way of realization, it is hard that the present invention proposes the programmable iir filter simulation based on memristor
Part structure.
Because the input and output signal of system is all continuous signal, so needing first to be digitized input signal at place
Reason.First by analog input signal x (t) by classical switched-capacitor circuit, to generate sampled signal x [n].In adopting for input
Sample signal end adds the adder based on operational amplifier, to realize feedback signal q [n].Then, M signal q [n] is passed through
A series of one period delay circuit respectively obtains q [n-k]=q (nT-kT), k=1 ..., N-1.Filter coefficient akAnd bkPoint
It is not separately stored in the chi structure being made up of memristor.Using the input signal of discretization as input, according to filtering
Coefficient weighting summation, you can obtain the output y [n] of iir filter, and then complete the analog hardware of programmable iir filter
The design of circuit.
The first step of the iir filter circuit of the present invention needs to be sampled analog input signal x (t).For given
Sampling period T, input signal x (t) can be obtained into sampled signal x [n]=x (nT) by classical switched-capacitor circuit.
Classical switched-capacitor circuit is as shown in Figure 2.Wherein, CK is NMOS tube M signal.When CK amplitude is enough
(x (t)+V is typically larger than when bigTH, VTHFor NMOS tube M on state threshold voltage), M is operated in linear zone.Now, electric capacity C is carried out
Discharge and recharge, its voltage follow drain voltage, i.e. input signal x (t).When CK amplitude is sufficiently small, M is operated in saturated mode.This
When, electric capacity C almost with input voltage disconnect, its voltage remain CK it is from high to low when input voltage x (t) instantaneous value.
In fact at this moment, electric capacity C still electric discharge, but be due to metal-oxide-semiconductor conducting resistance it is very big, its time constant is in much larger than triode
The time constant of linear zone, so in the case where the time is relatively short, the voltage at its two ends is considered as keeping constant.So,
As shown in Fig. 3 (a) and Fig. 3 (b), when metal-oxide-semiconductor is turned on, output changes with the change of input；After metal-oxide-semiconductor disconnects, output
Remain constant.
In summary analyze, when CK is high level, circuit as shown in Figure 2 " can track " signal；And when CK is low
During level, the circuit " can freeze " instantaneous value of input signal.Therefore, if CK is that dutycycle as shown in Figure 4 is very small
Square wave, the output of the switched-capacitor circuit shown in Fig. 2 is the sampling for inputting x (t).
The sample rate of switched-capacitor circuit by metal-oxide-semiconductor conducting resistance RoutAnd sampling capacitance C size is determined.If
CK amplitude is sufficiently large, and metal-oxide-semiconductor is equivalent to conducting resistance, and its resistance is
Wherein, VGSThe voltage on metal-oxide-semiconductor grid is consequently exerted at, is herein signal CK amplitude；Other specification is metal-oxide-semiconductor
Inner parameter：μnFor electron mobility, CoxFor the gate oxide capacitance of unit area, W/L is device breadth length ratio, VTHFor threshold value
Voltage.Therefore, in order to obtain higher sample rate, it is necessary to using the device and small sampling capacitance value of big breadth length ratio.
NMOS tube and the selection of the parameter of electric capacity should be met for given cycle T, the time constant in voltage follow stage
RoutC maximum is much smaller than T.In order that metal-oxide-semiconductor can transmit an input to output exactly, the time constant should be avoided too big,
And x (t) maximum needs to be limited in VGS/2.Like this, if the voltage CK being applied on M grids keeps Ton=5RoutC's
High voltage, subsequent T-5RoutThe C times keep low-voltage, then the electric capacity in the circuit shown in Fig. 2 can store input voltage
Sample x (nT).Fig. 4 illustrates CK, input x (t) and its x (nT) that samples general relationship.
In order to obtain the output of wave filter, the design of iir filter also needs to obtain q [n-k], k=1 ..., N-1.Fig. 5
Shown one period delay circuit can produce q [n-k-1] using q [n-k] as input.If by N-1 such circuit strings
Connection, and it regard q [n] as input, it is possible to delay sampling signal q [n-k], k=1 ... are respectively obtained in the output of each module,
N-1.Main effect is isolation circuit to buffer unit therein in circuit.Voltage is used in the design of the present invention
Follower.
Control signal CK in one period delay unit is as the delay series where the delay circuit is without same.CK is determined
The sampling instant of sample circuit, the series of delay is higher (k is bigger), and CK more postpones compared to a upper delay cell.
In order to reach control signal CK order, monostable flipflop can be used to realize the control of control signals at different levels
System, its realization principle is as shown in Figure 6.The initial state of monostable flipflop is in low state, and the output of above stage circuit trigger
As the triggering input of this grade of trigger, the cycle is T.It is triggered voltage trailing edge triggering.In each of the lower after drop edge, it
Still T-T is kept in low stateon(Ton=5RoutCH＜ ＜ T), subsequently into unstable high state, maintain Ton, can then return again
To stable low state.The high state of monostable flipflop output only maintains very short time Ton(compared to T), and in each triggering
Input the T-T of trailing edgeonAfter second.This high state time TonNeed to make NMOS tube enter deep linear zone, and electric capacity C enough
The time of charging can make voltage thereon reach input voltage q [k].T-T is reached in the trailing edge of triggering inputonAfter ≈ T,
Input voltage q [k] will be reflected in electric capacity C two ends.Because the input of buffer in Fig. 5 circuit is the sampling that step-length is T
Voltage, so the voltage output of one period delay circuit capacitance would is that the version after its input voltage time delay T, i.e., also can
Stair-stepping form is presented.
Analysis more than, the sampling of analog input signal and its postpones signal of M signal can be as shown in Figure 7
Circuit obtain.The only one of which cycle is T clock pulse sequence CK in whole circuit, and it is directly as switched-capacitor circuit
NMOS tube control signal.And the monostable flipflop of only first one period delay circuit is directly triggered by CK,
The trigger of subsequent conditioning circuit unit is used as triggering by the output of upper level trigger.In order that system has good performance, open
The parameter of powered-down capacitive circuit and one period delay circuit should meet condition discussed above, i.e., for given cycle T, need to expire
Foot (N-1) Ton=5 (N-1) RoutCH＜ ＜ T.
Fig. 8 show the circuit of programmable iir filter proposed by the present invention.Wherein adder SUM design such as Fig. 9 institutes
Show.The periphery of memristor in cross matrix structure has been all connected with memristor resistance adjustment circuit, with to carry out resistance adjustment.
It is succinct for circuit, only in memristor M in figureb0Surrounding is connected to resistance adjustment circuit to illustrate.
Assuming that the resistance of all memristors has been adjusted to desired resistance, and kept during circuit works
It is constant, then from operational amplifier " void disconnected " and " void is short " property, u in circuit diagram 8aInput and output relation
For：
According to adder SUM annexation, it can obtain,
U in circuitbInput and the relation of output be：
It can prove, x [n] and y [n] meet following relation：
Formula (4) and formula (1) are contrasted, can be obtained：
Formula (5) expresses the mathematical relationship of filter coefficient and memristor resistance.
In the present invention, it is assumed that the resistance of all use memristors is substantially constant.Although the electric current meeting for passing through memristor
Change its resistance, but each memristor has its threshold value, i.e., when being less than the threshold value by the electric current of the memristor, memristor
Resistance do not change.For each memristor, this value is constant.That is, only working as by certain memristor
When the amplitude of electric current is sufficiently large, the resistance of the memristor can just change.Being capable of effectively work for the iir filter of proposition
Make, the resistance of the memristor used in circuit must keep constant as far as possible, and this requires enough by the current amplitude of memristor
It is small.
In order to reach this purpose, as long as the resistance of increase memristor can just reduce the electricity by corresponding memristor
Stream.From formula (5), the filter factor of iir filter passes through the form of amplifier feed-back resistance and the ratio of memristor resistance
Embody.As long as while the resistance of memristor is increased, the resistance of feedback resistance must be increased in proportion.But, memristor
Resistance also constrained by device self property.Its resistance is limited in RONAnd ROFFBetween, so being also impossible to obtain
As far as possible small electric current and infinitely increase the resistance of memristor.They select do suitable choosing according to the actual characteristic of device
Select.
The feedback resistance of amplifier is the amplitude that have impact on output signal, and has no effect on frequency characteristic of filter.Letter
Number amplitude can conveniently must be adjusted by amplifier.So feedback resistance can directly use common resistance herein, and
Without the use of memristor.
So far it can draw, for wave filter numerator coefficients bk(k=0 ..., N-1) all negative and denominator coefficients ak(k=
1 ..., N-1) all positive wave filters, by Rfa,RfbAnd Mb0,Mb1,Mb2,…,Mb(N-1),Ma1,Ma2,…,Ma(N-1)Carry out
Suitable selection and adjustment, can make feedback resistance consistent with the coefficient of iir filter with the ratio of branch road memristor resistance.By
This demonstrates the correct validity of the programmable iir filter hardware circuit shown in Fig. 8.
For filter denominator coefficient akThe design of iir filter during (k=1 ..., N-1) all negative values, will can scheme
Adder in 8 is changed to subtracter；For wave filter numerator coefficients bk(k=0 ..., N-1) all positive wave filters, can be with
Completed by the amplifier that a negative function is added in the end of wave filter.
Simulating, verifying is carried out for programmable iir filter proposed by the present invention.In order to contrast convenient with input signal, this
In simulation result be wave filter end add a sign-changing amplifier after result, i.e. wave filter numerator coefficients bk(k=
0 ..., N-1) all positive wave filters.
This signal to be filtered for emulating selection is x (t)=0.1sin (2 π × 500t)+0.1sin (2 π × 35000t),
Need to carry out LPF, filter out 35000Hz high frequency, retain 500Hz low frequency signal.
Design denominator filter factor ak(k=0 ..., N-1) it is positive iir filter.As N=7, the IIR filtering of design
The transmission function of device is as follows：
Formula (6) and the contrast of formula (2) and formula (5) can be obtained into filter coefficient：
For in theory, as long as reaching above-mentioned ratio relation, Rfa,RfbAnd Ma1,Ma2,...Ma6,Mb0,Mb1,Mb2,
...Mb6Value can arbitrarily select.But as described in this chapter, in order to limit the electric current by memristor, the resistance of memristor
Should be larger.In this emulation, Rfa,RfbAnd Ma1,Ma2,...Ma6,Mb0,Mb1,Mb2,...Mb6Selection is as follows respectively：
Rfb=975 Ω, Mb0=12000 Ω, Mb1=2000 Ω, Mb2=800 Ω,
Mb3=600 Ω, Mb4=800 Ω, Mb5=2000 Ω, Mb6=12000 Ω,
Rfa=1500 Ω, Ma1=1194 Ω, Ma2=1212 Ω, Ma3=1552 Ω,
Ma4=2650 Ω, Ma5=9450 Ω, Ma6=33415 Ω
Wherein RfaAnd RfbSelection be the amplitude based on output signal be equal to input signal x (t) in low frequency signal width
Degree.For Ma1,Ma2,...Ma6,Mb0,Mb1,Mb2,...Mb6, their value by periphery adjustment circuit directly adjust.This is imitated
The adjustment circuit really used is the memristor resistance adjustment circuit based on reference voltage shown in Figure 10.It is suitable by selection
R1,R2,R3,R4,RsAnd Vs, the circuit passes through control voltage VrefReach adjustment memristor RMThe purpose of resistance.If assuming RM＜ ＜
Rs, then the R in stable stateMWith VrefControl planning be
Using operational amplifier A D711a, the grid as each metal-oxide-semiconductor is arranged using the square-wave signal of the T=10 μ s shown in Figure 11
Voltage, iir filter corresponding to formula (6) is added using the iir filter circuit shown in Fig. 8 and carried out after reverse proportional amplifier
Emulation, can obtain simulation result as shown in figure 12.Wherein figure below is the signal after filtering, and upper figure is the low frequency in input signal
Composition.Its corresponding Matlab simulation result is as shown in figure 13.From Figure 12 and Figure 13 Comparative result, Fig. 8 of the invention
The filter effect of shown iir filter is more satisfactory.
Although the present invention is illustrated and described with regard to preferred embodiment, it is understood by those skilled in the art that
Without departing from scope defined by the claims of the present invention, variations and modifications can be carried out to the present invention.
Claims (3)
1. a kind of programmable iir filter analog hardware implementation method based on memristor, it is characterised in that including following step
Suddenly：
(1) analog input signal is sampled using switched-capacitor circuit, obtains the digitized samples signal of analog input signal；
(2) data signal of sampling is postponed using one period delay circuit, obtains the delay letter of sandwich digit signal
Number；
(3) according to the Direct-type structure of iir filter, two parts electricity is set up using the cross matrix structure and adder of memristor
Road, is exported respectively as feedback circuit and weighted sum；
(4) resistance of memristor is selected and set, the setting of filter parameter is completed；Input analog signal to be filtered, in fortune
The output end for calculating amplifier obtains filter signal.
2. the programmable iir filter analog hardware implementation method as claimed in claim 1 based on memristor, its feature exists
In in step (1), the grid voltage of the metal-oxide-semiconductor of switched-capacitor circuit is at least needed more than analog input signal in high level
The on state threshold voltage sum of maximum amplitude and metal-oxide-semiconductor；Using the MOS device and small sampling capacitance value of big breadth length ratio, MOS
The parameter selection of pipe and electric capacity should be met for given cycle T, the time constant R in voltage follow stageoutC maximum
Much smaller than T, wherein, RoutFor the conducting resistance of metal-oxide-semiconductor, its resistance is
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Wherein, VGSIt is consequently exerted at the voltage on metal-oxide-semiconductor grid；Other specification is the inner parameter of metal-oxide-semiconductor：μnFor electron transfer
Rate, CoxFor the gate oxide capacitance of unit area, W/L is device breadth length ratio, VTHFor threshold voltage；The grid voltage of metal-oxide-semiconductor should
The selection is the relatively small square-wave signal of dutycycle, and the maximum amplitude of analog input signal needs to be limited in VGS/2。
3. the programmable iir filter analog hardware implementation method as claimed in claim 1 based on memristor, its feature exists
In in step (4), the resistance of memristor is limited in RONAnd ROFFBetween, and should to be less than threshold value electricity by its electric current
Stream；Amplitude of the selection of the feedback resistance of operational amplifier based on output signal is equal to the amplitude of useful signal in input signal.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109800870A (en) * | 2019-01-10 | 2019-05-24 | 华中科技大学 | A kind of Neural Network Online learning system based on memristor |
| CN110767963A (en) * | 2019-09-09 | 2020-02-07 | 杭州电子科技大学 | Novel reconfigurable dual-frequency band-pass filter based on memristor |
| CN111695678A (en) * | 2020-06-01 | 2020-09-22 | 电子科技大学 | Image title generation method based on memristor module array |
| CN112821879A (en) * | 2020-12-30 | 2021-05-18 | 广东技术师范大学 | Physiological electric signal filtering and denoising circuit based on memristor and control method thereof |
| CN112994685A (en) * | 2019-12-12 | 2021-06-18 | 上海交通大学 | Method for improving output linearity of digital phase converter |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140361851A1 (en) * | 2011-02-01 | 2014-12-11 | Martin Anthony Keane | Signal-processing devices having one or more memristors |
| CN106026969A (en) * | 2016-05-30 | 2016-10-12 | 王顺亭 | Filter circuit based on memristor |
| WO2016175781A1 (en) * | 2015-04-29 | 2016-11-03 | Hewlett Packard Enterprise Development Lp | Discrete-time analog filtering |
| CN106301284A (en) * | 2016-07-21 | 2017-01-04 | 华中科技大学 | A kind of adjustable filter circuit of bandwidth based on memristor and operational approach thereof |
| CN106487355A (en) * | 2016-12-20 | 2017-03-08 | 滨州学院 | Single order high-pass filtering circuit based on memristor |
-
2017
- 2017-05-15 CN CN201710338451.XA patent/CN107241080A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140361851A1 (en) * | 2011-02-01 | 2014-12-11 | Martin Anthony Keane | Signal-processing devices having one or more memristors |
| WO2016175781A1 (en) * | 2015-04-29 | 2016-11-03 | Hewlett Packard Enterprise Development Lp | Discrete-time analog filtering |
| CN106026969A (en) * | 2016-05-30 | 2016-10-12 | 王顺亭 | Filter circuit based on memristor |
| CN106301284A (en) * | 2016-07-21 | 2017-01-04 | 华中科技大学 | A kind of adjustable filter circuit of bandwidth based on memristor and operational approach thereof |
| CN106487355A (en) * | 2016-12-20 | 2017-03-08 | 滨州学院 | Single order high-pass filtering circuit based on memristor |
Non-Patent Citations (2)
| Title |
|---|
| SEYEDEH-NAFISEH MIREBRAHIMI,FARSHAD MERRIKH-BAYAT: "Programmable discrete-time type I and type II FIR filter design on the memristor crossbar structure", 《ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING(2014)》 * |
| YIBIN HONG: "Continuous-Time FIR Filters Based on Frequency-Response Masking Technique", 《2015 IEEE INTERNATIONAL CONFERENCE ON DIGITAL SIGNAL PROCESSING (DSP)》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109800870A (en) * | 2019-01-10 | 2019-05-24 | 华中科技大学 | A kind of Neural Network Online learning system based on memristor |
| CN110767963A (en) * | 2019-09-09 | 2020-02-07 | 杭州电子科技大学 | Novel reconfigurable dual-frequency band-pass filter based on memristor |
| CN112994685A (en) * | 2019-12-12 | 2021-06-18 | 上海交通大学 | Method for improving output linearity of digital phase converter |
| CN112994685B (en) * | 2019-12-12 | 2022-08-16 | 上海交通大学 | Method for improving output linearity of digital phase converter |
| CN111695678A (en) * | 2020-06-01 | 2020-09-22 | 电子科技大学 | Image title generation method based on memristor module array |
| CN111695678B (en) * | 2020-06-01 | 2022-05-03 | 电子科技大学 | Image title generation method based on memristor module array |
| CN112821879A (en) * | 2020-12-30 | 2021-05-18 | 广东技术师范大学 | Physiological electric signal filtering and denoising circuit based on memristor and control method thereof |
| CN112821879B (en) * | 2020-12-30 | 2023-07-04 | 广东技术师范大学 | Memristor-based physiological electric signal filtering denoising circuit and control method thereof |
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