CN107742655A - 选择性发射极电池结构及其制备方法 - Google Patents
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Abstract
本发明公开了一种选择性发射极电池结构的制备方法，括以下步骤：S1、取制绒后的硅片，在APCVD沉积磷源或硼源，形成轻掺区；S2、激光开膜，轻掺区形成呈行列分隔的方块阵结构；S3、将硅片返回APCVD沉积磷源或硼源，进行高温推进，形成重掺区。本发明优势在于重掺区可根据激光开膜宽度进行调试，开膜对硅体损伤较小，扩散只需要升温推进即可，工艺制备简单，良率高、损伤小。
Description
技术领域
本发明属于太阳电池结构设计技术领域，具体是一种选择性发射极电池结构的制备方法。
背景技术
目前现有的制备SE工艺方案有激光烧蚀，化学腐蚀等。现有的SE激光烧蚀对硅体损伤较大，需要经过退火修复才能体现优势，化学腐蚀线宽难以控制，加工成本、不良及污染率相对较高。
发明内容
本发明主要目的在于克服上述的现有制备方法所造成的不良率高、损伤大、成本高，提供一种简单的热推进选择性发射极，工艺制备简单，良率高、损伤小、成本低。
技术方案：
本发明公开了一种选择性发射极电池结构的制备方法，包括以下步骤：
S1、取制绒后的硅片，在APCVD沉积含有低浓度磷源或硼源的SiO2，形成轻掺区；
S2、激光开膜，开膜直线分割轻掺区形成呈分隔的长条矩阵结构；
S3、将硅片返回APCVD沉积含有高浓度磷源或硼源的SiO2，进行高温推进，形成重掺区，重掺区侵入开膜直线并覆盖轻掺区。
优选的，S1中轻掺区磷源或硼源的浓度为0.01～5％，S3中重掺区磷源或硼源的浓度为0.02～5.01％；重掺区中磷源或硼源的浓度高于轻掺区中磷源或硼源的浓度；磷源/硼源浓度是指磷/硼元素含量在SiO2中质量分数的比值。
具体的，轻掺区磷源或硼源的浓度为0.3％，重掺区磷源或硼源的浓度为1％。
优选的，S2中激光开膜选用激光波长532，NS绿光；开膜功率根据沉积的膜厚SiO2膜厚不同而设置，具体的：膜厚10～50nm时，开膜功率≤10w；膜厚50～100nm时，10w≤开膜功率≤15w。
优选的，S3中所述高温推进根据方阻需求设定升温时间及最高温度：
重掺区方阻：磷源或硼源浓度含量越高，在温度时间相同的参数下，方阻越低；
轻掺区方阻：磷源或硼源浓度含量越低，在温度时间相同的参数下，方阻越高。
具体的S3中高温推进温度为700～900℃，高温推进时间为5～60min。
本发明还公开了一种选择性发射极电池结构，制绒后的硅片表面沉淀有轻掺区，在轻掺区上有开膜直线将轻掺区分割为呈行状的长条矩阵结构；轻掺区上和开膜直线中沉淀有重掺区；所述轻掺区和重掺区均为磷源或硼源。
优选的，所述轻掺区的厚度为5～100nm，轻掺区的方阻为100ohm/sp以上；重掺区的厚度为5～100nm，重掺区的方阻为55～65ohm/sp。
具体的，所述轻掺区的厚度为20nm，轻掺区的方阻为100ohm/sp；重掺区的厚度为20nm，重掺区的方阻为60ohm/sp。
具体的，所述开膜直线的宽度为100～150um。
本发明的有益效果
本发明优势在于重掺区可根据激光开膜宽度进行调试，开膜对硅体损伤较小，扩散只需要升温推进即可，工艺制备简单，良率高、损伤小；此外，该方法制得的选择性发射极电池方阻均匀性好，成本相对较低。
附图说明
图1为本发明选择性发射极电池结构的俯视图。
图2为本发明选择性发射极电池结构的剖视图。
具体实施方式
下面结合实施例对本发明作进一步说明，但本发明的保护范围不限于此：
结合图1和图2，实施例1：一种选择性发射极电池结构的制备方法，包括以下步骤：
S1、取制绒后的硅片1，在APCVD沉积含有低浓度磷源或硼源的SiO2，形成轻掺区3，轻掺区3磷源或硼源的浓度为0.01％；
S2、激光开膜，开膜直线2分割轻掺区3形成呈分隔的长条矩阵结构；
S3、将硅片1返回APCVD沉积含有高浓度磷源或硼源的SiO2，进行高温推进，形成重掺区4，重掺区4侵入开膜直线2并覆盖轻掺区3；重掺区4磷源或硼源的浓度为0.02％；高温推进温度为900℃，高温推进时间为60min。
实施例2：一种选择性发射极电池结构的制备方法，包括以下步骤：
S1、取制绒后的硅片1，在APCVD沉积含有低浓度磷源或硼源的SiO2，形成轻掺区3，轻掺区3磷源或硼源的浓度为5％；
S2、激光开膜，开膜直线2分割轻掺区3形成呈分隔的长条矩阵结构；
S3、将硅片1返回APCVD沉积含有高浓度磷源或硼源的SiO2，进行高温推进，形成重掺区4，重掺区4侵入开膜直线2并覆盖轻掺区3；重掺区4磷源或硼源的浓度为5.01％；高温推进温度为700℃，高温推进时间为5min。
实施例3：一种选择性发射极电池结构的制备方法，包括以下步骤：
S1、取制绒后的硅片1，在APCVD沉积含有低浓度磷源或硼源的SiO2，形成轻掺区3，轻掺区3磷源或硼源的浓度为0.3％；
S2、激光开膜，开膜直线2分割轻掺区3形成呈分隔的长条矩阵结构；
S3、将硅片1返回APCVD沉积含有高浓度磷源或硼源的SiO2，进行高温推进，形成重掺区4，重掺区4侵入开膜直线2并覆盖轻掺区3；重掺区4磷源或硼源的浓度为1％；高温推进温度为800℃，高温推进时间为30min。
实施例4：一种选择性发射极电池结构的制备方法，包括以下步骤：
S1、取制绒后的硅片1，在APCVD沉积含有低浓度磷源或硼源的SiO2，形成轻掺区3，轻掺区3磷源或硼源的浓度为0.3％；
S2、激光开膜，开膜直线2分割轻掺区3形成呈分隔的长条矩阵结构；
S3、将硅片1返回APCVD沉积含有高浓度磷源或硼源的SiO2，进行高温推进，形成重掺区4，重掺区4侵入开膜直线2并覆盖轻掺区3；重掺区4磷源或硼源的浓度为1％；高温推进根据方阻需求设定升温时间及最高温度：
重掺区方阻：磷源或硼源浓度含量越高，在温度时间相同的参数下，方阻越低；
轻掺区方阻：磷源或硼源浓度含量越低，在温度时间相同的参数下，方阻越高。
本实施例中，重掺区可根据激光开膜宽度进行调试，开膜对硅体损伤较小，扩散只需要升温推进即可，工艺制备简单，良率高、损伤小。
优选的，上述各实施例中，S2中激光开膜选用激光波长532，NS绿光；开膜功率根据沉积的膜厚SiO2膜厚不同而设置，具体的：膜厚10～50nm时，开膜功率≤10w；膜厚50～100nm时，10w≤开膜功率≤15w。
实施例1-4的优势在于重掺区可根据激光开膜宽度进行调试，开膜对硅体损伤较小。
基于实施例1-4所述制备方法获得的选择性发射极电池结构，制绒后的硅片1表面沉淀有轻掺区3，在轻掺区3上有开膜直线2将轻掺区3分割为呈行状的长条矩阵结构；轻掺区3上和开膜直线2中沉淀有重掺区4；所述轻掺区3和重掺区4均为磷源或硼源。所述轻掺区3的厚度为5～100nm，轻掺区3的方阻为100ohm/sp以上；重掺区4的厚度为5～100nm，重掺区4的方阻为55～65ohm/sp。所述开膜直线2的宽度为100～150um。
具体的，按照实施例3所述制备方法获得的选择性发射极电池结构，所述轻掺区3的厚度为20nm，轻掺区3的方阻为100ohm/sp；重掺区4的厚度为20nm，重掺区4的方阻为60ohm/sp。
制得的选择性发射极电池方阻均匀性好，成本相对较低。
本文中所描述的具体实施例仅仅是对本发明精神做举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代，但并不会偏离本发明的精神或者超越所附权利要求书所定义的范围。
Claims (10)
1.一种选择性发射极电池结构的制备方法，其特征在于：包括以下步骤：
S1、取制绒后的硅片(1)，在APCVD沉积含有低浓度磷源或硼源的SiO2，形成轻掺区(3)；
S2、激光开膜，开膜直线(2)分割轻掺区(3)形成分隔的长条矩阵结构；
S3、将硅片(1)返回APCVD，沉积含有高浓度磷源或硼源的SiO2，进行高温推进，形成重掺区(4)，重掺区(4)侵入开膜直线(2)并覆盖轻掺区(3)。
2.根据权利要求1所述的制备方法，其特征在于：S1中轻掺区(3)磷源或硼源的浓度为0.01～5％，S3中重掺区(4)磷源或硼源的浓度为0.02～5.01％；重掺区(4)中磷源或硼源的浓度高于轻掺区(3)中磷源或硼源的浓度。
3.根据权利要求2所述的制备方法，其特征在于：轻掺区(3)磷源或硼源的浓度为0.3％，重掺区(4)磷源或硼源的浓度为1％。
4.根据权利要求1所述的选择性发射极电池结构，其特征在于S2中激光开膜选用激光波长532，NS绿光；开膜功率根据沉积的膜厚SiO2膜厚不同而设置，具体的：膜厚10～50nm时，开膜功率≤10w；膜厚50～100nm时，10w≤开膜功率≤15w。
5.根据权利要求1所述的制备方法，其特征在于：S3中所述高温推进根据方阻需求设定升温时间及最高温度：
重掺区方阻：磷源或硼源浓度含量越高，在温度时间相同的参数下，方阻越低；
轻掺区方阻：磷源或硼源浓度含量越低，在温度时间相同的参数下，方阻越高。
6.根据权利要求5所述的制备方法，其特征在于：S3中高温推进温度为700～900℃，高温推进时间为5～60min。
7.一种基于权利要求1所述制备方法获得的选择性发射极电池结构，其特征在于：制绒后的硅片(1)表面沉淀有轻掺区(3)，在轻掺区(3)上有开膜直线(2)将轻掺区(3)分割为呈行状的长条矩阵结构；轻掺区(3)上和开膜直线(2)中沉淀有重掺区(4)；所述轻掺区(3)和重掺区(4)均为磷源或硼源。
8.根据权利要求5所述的选择性发射极电池结构，其特征在于：所述轻掺区(3)的厚度为5～100nm，轻掺区(3)的方阻为100ohm/sp以上；重掺区(4)的厚度为5～100nm，重掺区(4)的方阻为55～65ohm/sp。
9.根据权利要求6所述的选择性发射极电池结构，其特征在于：所述轻掺区(3)的厚度为20nm，轻掺区(3)的方阻为100ohm/sp；重掺区(4)的厚度为20nm，重掺区(4)的方阻为60ohm/sp。
10.根据权利要求5所述的选择性发射极电池结构，其特征在于：所述开膜直线(2)的宽度为100～150um。
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