CN107741242A - The preparation method of shield type sensor terminal - Google Patents

The preparation method of shield type sensor terminal Download PDF

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Publication number
CN107741242A
CN107741242A CN201710802173.9A CN201710802173A CN107741242A CN 107741242 A CN107741242 A CN 107741242A CN 201710802173 A CN201710802173 A CN 201710802173A CN 107741242 A CN107741242 A CN 107741242A
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China
Prior art keywords
positive electrode
type sensor
electrode layer
shield type
terminal
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CN201710802173.9A
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Chinese (zh)
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CN107741242B (en
Inventor
孟召龙
殷智勇
刘玲
孟付荣
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Sense Source Electronic Technology (shanghai) Co Ltd
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Sense Source Electronic Technology (shanghai) Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)

Abstract

The present invention provides a kind of preparation method of shield type sensor terminal, comprises the following steps：Prepare the coiled material of composite bed；It is in single shield type sensor by coiled material cutting；Cut off the material of positive electrode layer upper part；Plus end is squeezed on positive electrode layer, the surface that the lower surface of plus end is exposed with positive electrode layer is bonded conducting；Negative terminal is squeezed into from the side of shield type sensor, through the void region of positive electrode layer, until the opposite side of shield type sensor.It the advantage is that and realize face contact conducting；Negative terminal passes through the void region in positive electrode to be turned on through whole shield type sensor with negative electrode；Add two layers of transversal metal covering；The terminal of ground electrode is squeezed into increase, as long as redundant terminals energy normal work, the ground of the sensor are still reliably connected；Improve the electrical contact performance of terminal.

Description

The preparation method of shield type sensor terminal
Technical field
The present invention relates to a kind of preparation method of shield type sensor terminal.
Background technology
Under conditions of volume to volume produces full-shield type sensor, often sensor is neck and neck an appropriate width Degree, single sensor is cut out again after producing and completing.Due to the relation of material thickness, even if using state-of-the-art right Neat technology, with the increase of distance, screen layer can form increasing error with corresponding stratum.So in the mistake of production Cheng Zhong, screen layer is all often covered into electrode, and abandon hollow out and go out some patterns.Such processing mode is beating metal end One of technique is added when sub-, i.e., be stripped out by corresponding to positive electrode, then enters to play the processing of terminal.
Although the mode for so beating terminal avoids contact with metal ground, but because terminal and metal be longitudinal Cross section contacts, and under the influence of follow-up technique (such as solder terminal) and use environment (pullling stress), terminal part is often Small displacement can be formed so as to cause the open circuit of sensor, prevent its signal from drawing, i.e., so-called " loose contact " situation. The situation causes certain fraction defective.
The content of the invention
The present invention offer a kind of shield type sensor terminal preparation method, solve existing technical problem, with gram The defects of taking prior art.
The present invention provides a kind of preparation method of shield type sensor terminal, comprises the following steps：
Step A, the coiled material of composite bed is prepared；Composite bed include at least one layer of positive electrode layer, at least one layer of positive electrode layer with And the non-conductive layer between positive electrode layer, positive electrode layer；Have in positive electrode layer in the relevant position of each shield type sensor Void region；
Step B, it is in single shield type sensor by coiled material cutting, the positive electrode layer of each shield type sensor has extremely A few void region；
Step C, the material of positive electrode layer upper part is cut off, is completely exposed the metal surface of positive electrode layer；
Step D, terminal is squeezed into；
Step D-1, plus end is squeezed on positive electrode layer, the surface that the lower surface of plus end is exposed with positive electrode layer is bonded Conducting；
Step D-2, negative terminal is squeezed into from the side of shield type sensor, through the void region of positive electrode layer, until screen Cover the opposite side of type sensor.
Further, the present invention provides a kind of preparation method of shield type sensor terminal, can also have the feature that： Step D-2 is before negative terminal is squeezed into, in positive electrode layer void region position, any one surface of shield type sensor or two One layer of conductive layer of surface mount；Negative terminal squeezes into shield type sensor from conductive layer, through the void region of positive electrode layer, until Opposite side.
Further, the present invention provides a kind of preparation method of shield type sensor terminal, can also have the feature that： The width of conductive layer is not more than the width of positive electrode layer void region.
Further, the present invention provides a kind of preparation method of shield type sensor terminal, can also have the feature that： Bonded between positive electrode layer, positive electrode layer, non-conductive layer in step A using colloid.
Further, the present invention provides a kind of preparation method of shield type sensor terminal, can also have the feature that： Step C is carried out before colloid is fully cured.
Further, the present invention provides a kind of preparation method of shield type sensor terminal, can also have the feature that： The excision mode of the material of step C positive electrode layer upper parts, the surface of vertical screen type sensor are cut to positive electrode layer, then Material on positive electrode layer is removed.
Further, the present invention provides a kind of preparation method of shield type sensor terminal, can also have the feature that： After removing material, it is processed by shot blasting on exposed positive electrode layer surface.
Further, the present invention provides a kind of preparation method of shield type sensor terminal, can also have the feature that： The quantity of negative terminal is at least two.
Further, the present invention provides a kind of preparation method of shield type sensor terminal, can also have the feature that： Also include step E, the welding lead on plus end and any one negative terminal.
The present invention provides a kind of preparation method of shield type sensor terminal, and positive electrode part contacts with plus end face and led It is logical；Negative terminal passes through the void region in positive electrode to be turned on through whole shield type sensor with negative electrode；In corresponding ground electrode The bonding partially of position layer of metal adhesive tape adds two layers of transversal metal covering；The terminal of ground electrode, some ends are squeezed into increase Son is idle, and as redundant terminals, remaining terminal can weld or stress；Other terminals by external condition damage when Wait, as long as redundant terminals energy normal work, the ground of the sensor are still reliably connected；Improve the electrical contact performance of terminal.
Brief description of the drawings
Fig. 1 is the cross-sectional structure figure of the compound layer coiled material of shield type sensor.
Fig. 2 is the cross-sectional structure figure of single shield type sensor.
Fig. 3 is the shield type sensor cross-section structure chart for the material for cutting off positive electrode layer upper part.
Fig. 4 is the structure chart for the shield type sensor for having welded terminal.
Brief description of the drawings：
The insulating barrier-30 of the positive electrode layer of insulating protective layer-10-20
The insulation sensing element of colloid -50 of positive electrode layer -40 layer -60
The conductive tape-90 of the insulating protective layer of positive electrode layer-70-80
The negative terminal-200 of the plus end of void region-41-100
Embodiment
The present invention will be further described with specific embodiment below in conjunction with the accompanying drawings.
Step A, the coiled material of composite bed is prepared.
Fig. 1 is the cross-sectional structure figure of the compound layer coiled material of shield type sensor.
As shown in figure 1, the compound layer coiled material of the shield type sensor in the present embodiment, by insulating protective layer 10, negative electrode Layer 20, insulating barrier 30, positive electrode layer 40, insulation colloid 50, sensing element layer 60, positive electrode layer 70, insulating protective layer 80 are successively It is laminated.There is void region 41 in the relevant position of each shield type sensor in positive electrode layer 40.
The number of plies and material of the compound layer coiled material of shield type sensor can be set according to being actually needed, and be not limited to this implementation The structure represented in example.Non-conducting material between positive electrode layer 40 and positive electrode layer 20,70 is referred to as non-conductive layer.Each work( There is one layer of insulation colloid between ergosphere to ensure the bonding between each layer, present case only draws the insulation colloid on positive electrode 50 to illustrate present disclosure.
Step B, it is in single shield type sensor by coiled material cutting.
Fig. 2 is the cross-sectional structure figure of single shield type sensor.
Coiled material is cut into single shield type sensor as shown in Figure 2 along the dotted line in Fig. 1.Each shield type sensor Positive electrode layer 40 all there is a void region 41.Void region 41 on positive electrode layer 40, which is one, a fixed length and width Pocket, ensure the whole electrode of sense film be still what is be connected.
General each shield type sensor is identical, that is to say, that void region is placed equidistant in coiled material. Certainly, multiple void regions 41 can be arranged as required in the positive electrode layer 40 of each shield type sensor, so as to negative terminal It can beat in different positions.This when, void region 41 was not just single uniform, with a shield type when prepared by coiled material Void region in sensor is uniform into an entirety.
Step C, the material of positive electrode layer upper part is cut off.
Fig. 3 is the shield type sensor cross-section structure chart for the material for cutting off positive electrode layer upper part.
Before insulation colloid 50 is fully cured, along the surface of the dotted line vertical screen type sensor shown in Fig. 2 to positive electricity Pole layer cutting, then removes the material on positive electrode layer.
So-called to be fully cured, the colloid that exactly insulate needs certain hardening time, could realize firm bonding effect. Connected before being fully cured, between positive electrode layer 40 and sensing element layer 60 not exclusively firm.Because the species for the colloid that insulate is very It is more, give one example, such as a kind of insulation colloid in the environment of 60 degree, it is necessary to which solidifying 3 days can just be fully cured.So walk Rapid C is just carried out in the case where solidifying 1 to 2 day.That is 1 to three/3rds points of the time are fully cured in insulation colloid Two time in, carry out cut off positive electrode layer upper part material.This ensure that insulation colloid has certain cohesive, Also the insulation colloid is allowd to tear.
Still some insulation colloid 50 is bonded in the surface of positive electrode layer 40 after tearing.Blade or sand can now be used The devices such as wheel are processed by shot blasting to the surface of positive electrode layer 40, positive electrode layer metal is exposed completely and are come.
Step D, terminal is squeezed into.
Fig. 4 is the structure chart for the shield type sensor for having welded terminal.
As shown in figure 4, step D-1, squeezing into plus end
Plus end is squeezed on positive electrode layer 40, the surface that the lower surface of plus end 100 is exposed with positive electrode layer 40 is bonded Conducting.
The situation that senser element Jing Guo polishing does not beat plus end is that metal terminal and positive electrode are only longitudinal direction Contact, the way of contact is in actual use easily because various extraneous physical actions cause the situation of loose contact.This The shield type sensor of invention, the positive electrode layer of plus end 100 and sensor after being processed by shot blasting on positive electrode layer surface Metal be face contact, significantly enhance reliability.
Step D-2, negative terminal is squeezed into.
In the position of void region 41 of positive electrode layer 40, the upper and lower surface of shield type sensor pastes one layer of conductive layer；When Right conductive layer can wrap up the surrounding of whole sensor to realize.In the present embodiment, conductive layer is conductive tape 90, can be copper Paper tinsel or any electric conductor.The width of conductive layer is not more than the width of positive electrode layer void region.Terminal position so easily. The conductive metal level forms connected structure and extra thickness up and down.
In the present embodiment, shield type sensor has three negative terminals 200, all squeezes into shielding from the conductive tape 90 of side Type sensor, through the void region 41 of positive electrode layer 40, until the conductive tape 90 of opposite side.Negative terminal 200 and conducting resinl Band 90 realizes face contact conducting.
In actual use, the effect of redundant terminals need to could be formed using the terminal of 2 and the above.It can be seen that a terminal by To pullling, after the cross section of the physical factor such as Overheating Treatment and negative electrode disconnects, sensing elements table still can be utilized Metal and another terminal retaining surface for not doing any processing on the conductive tape of face fitting contact.Make big in this way The big reliability for improving terminal.
It should be noted that step D-1 squeezes into plus end and step D-2 squeezes into negative terminal subdivision successively.
Step E, the welding lead on plus end 100 and any one negative terminal 200.During welding, conductive layer 90 can also rise It is not burned to the insulating protective layer 10,80 of both sides is protected.
Further illustrate, before the portion of material on step C excision positive electrode layers, and the bag of conductive layer can be carried out Wrap up in, then squeeze into negative terminal.Two processes not impression progress relatively, but conventional will not so operate.In addition, welding step can Directly to weld after squeezing into corresponding terminal, it is not necessary to which whole terminals, which have been beaten, to be welded.Of course, it is possible to terminal and wire After first welding, then squeeze into shield type sensor.

Claims (9)

  1. A kind of 1. preparation method of shield type sensor terminal, it is characterised in that：Comprise the following steps：
    Step A, the coiled material of composite bed is prepared；Composite bed includes at least one layer of positive electrode layer, at least one layer of positive electrode layer and just Non-conductive layer between electrode layer, positive electrode layer；There is hollow out in the relevant position of each shield type sensor in positive electrode layer Region；
    Step B, it is in single shield type sensor by coiled material cutting, the positive electrode layer of each shield type sensor has at least one Individual void region；
    Step C, the material of positive electrode layer upper part is cut off, is completely exposed the metal surface of positive electrode layer；
    Step D, terminal is squeezed into；
    Step D-1, plus end is squeezed on positive electrode layer, the lower surface of the plus end surface exposed with positive electrode layer, which is bonded, leads It is logical；
    Step D-2, negative terminal is squeezed into from the side of shield type sensor, through the void region of positive electrode layer, until shield type The opposite side of sensor.
  2. 2. the preparation method of shield type sensor terminal as claimed in claim 1, it is characterised in that：
    Step D-2 is before negative terminal is squeezed into, in positive electrode layer void region position, any one surface of shield type sensor or Two surface mounts, one layer of conductive layer；
    Negative terminal squeezes into shield type sensor from conductive layer, through the void region of positive electrode layer, until opposite side.
  3. 3. the preparation method of shield type sensor terminal as claimed in claim 2, it is characterised in that：The width of conductive layer is little Width in positive electrode layer void region.
  4. 4. the preparation method of shield type sensor terminal as claimed in claim 1, it is characterised in that：Positive electrode in step A Bonded between layer, positive electrode layer, non-conductive layer using colloid.
  5. 5. the preparation method of shield type sensor terminal as claimed in claim 4, it is characterised in that：Step C is complete in colloid Carried out before solidification.
  6. 6. the preparation method of shield type sensor terminal as claimed in claim 5, it is characterised in that：On step C positive electrode layers The excision mode of partial material, the surface of vertical screen type sensor is cut to positive electrode layer, then by positive electrode layer Material removes.
  7. 7. the preparation method of shield type sensor terminal as claimed in claim 6, it is characterised in that：After removing material, naked The positive electrode layer surface of dew is processed by shot blasting.
  8. 8. the preparation method of shield type sensor terminal as claimed in claim 2, it is characterised in that：The quantity of negative terminal is extremely It is few two.
  9. 9. the preparation method of shield type sensor terminal as claimed in claim 8, it is characterised in that：
    Also include step E, the welding lead on plus end and any one negative terminal.
CN201710802173.9A 2017-09-07 2017-09-07 The preparation method of shield type sensor terminal Active CN107741242B (en)

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Application Number Priority Date Filing Date Title
CN201710802173.9A CN107741242B (en) 2017-09-07 2017-09-07 The preparation method of shield type sensor terminal

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CN107741242B CN107741242B (en) 2019-09-10

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04106884A (en) * 1990-08-27 1992-04-08 Shin Etsu Polymer Co Ltd Connector and connection of electrode
WO2004054442A1 (en) * 2002-12-13 2004-07-01 Leonhard Lang Kg Medical electrode
CN103843079A (en) * 2011-07-29 2014-06-04 泰科电子日本合同会社 Ptc device
CN105092114A (en) * 2015-04-28 2015-11-25 深圳市豪恩声学股份有限公司 Pressure sensor, intelligent shoe pad, intelligent shoe, and manufacturing method of pressure sensor
CN105870319A (en) * 2016-04-26 2016-08-17 贝骨新材料科技（上海）有限公司 Roll-to-roll manufacturing method of long-strip piezoelectric film sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04106884A (en) * 1990-08-27 1992-04-08 Shin Etsu Polymer Co Ltd Connector and connection of electrode
WO2004054442A1 (en) * 2002-12-13 2004-07-01 Leonhard Lang Kg Medical electrode
CN103843079A (en) * 2011-07-29 2014-06-04 泰科电子日本合同会社 Ptc device
CN105092114A (en) * 2015-04-28 2015-11-25 深圳市豪恩声学股份有限公司 Pressure sensor, intelligent shoe pad, intelligent shoe, and manufacturing method of pressure sensor
CN105870319A (en) * 2016-04-26 2016-08-17 贝骨新材料科技（上海）有限公司 Roll-to-roll manufacturing method of long-strip piezoelectric film sensor

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