CN107731912A - Double the groove carborundum IGBT devices and preparation method of a kind of low on-resistance, small grid electric charge - Google Patents
Double the groove carborundum IGBT devices and preparation method of a kind of low on-resistance, small grid electric charge Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 52
- 229920005591 polysilicon Polymers 0.000 claims abstract description 50
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 43
- 239000001301 oxygen Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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Abstract
The present invention provides a kind of low on-resistance, double the groove carborundum IGBT devices and preparation method of small grid electric charge, and device includes source electrode, the first conduction type source contact, the second conduction type base region, the second conduction type of heavy doping trench area, the first conductivity type polysilicon grid, the second conductivity type polysilicon grid, groove gate medium, the second conduction type grid oxygen protection zone, the first conduction type parcel area, the first conduction type drift region, the second conductivity type substrate and drain electrode.The space-charge region that first conductivity type polysilicon grid of the present invention and the second conductivity type polysilicon grid are formed, reduces grid and the coupling of drain electrode, thus reduces device gate electric charge；First conduction type parcel area can reduce the space-charge region that the second conduction type grid oxygen protection zone is formed in drift region, and can effectively transmit electric current, thus can reduce device on-resistance；The second conduction type of heavy doping trench area effectively shields oxide field, protects grid oxygen.
Description
Technical field
The invention belongs to the silicon carbide power device field of microelectronics and power electronics, more particularly to a kind of low electric conduction
Resistance, double the groove carborundum IGBT devices and preparation method of small grid electric charge.
Background technology
Wide bandgap semiconductor carborundum because its energy gap is big, high heat conductance, high breakdown field strength, high electron saturation velocities with
And strong radiation resistance so that silicon carbide power semiconductor devices can be applied to high temperature, high pressure, high frequency and the work of intense radiation
Under environment.In field of power electronics, for IGBT because it has conductivity modulation effect, conducting resistance is small, extensive use and high pressure field.
But in IGBT, grid oxygen is directly exposed in drift region, its grid oxygen corner electric field is concentrated.SiC dielectric is normal
Number is SiO22.5 times of dielectric constant, in off state, according to Gauss theorem, SiO2Layer born it is pressure-resistant should be drift region
2.5 times of SiC, this make it that grid oxygen corner grid oxygen when being not reaching to SiC critical breakdown electric fields has been punctured in advance, device
Reliability decrease.
To solve the situation that grid oxygen punctures in advance, a kind of carborundum IGBT with P+ type grid oxygen protection zone has been suggested,
The structure is protected using P+ grid oxygens protection zone to grid oxygen so that high electric field is formed by P+ grid oxygens protection zone with N-type drift region
P-N junction undertake, reduce oxide field.But with the introducing of P+ grid oxygens protection zone, what it was formed in drift region exhausts
Area has a strong impact on the downward transmission of electronics so that device on-resistance becomes big.
The content of the invention
The shortcomings that in order to overcome above-mentioned prior art, it is an object of the invention to provide a kind of low on-resistance, small grid electricity
Double the groove carborundum IGBT devices and preparation method of lotus, overcome the carborundum IGBT of band the second conduction type grid oxygen protection zone
The defects of structure conducting resistance is larger；Second conduction type trench area of design effectively shields oxide field, protects grid oxygen；Simultaneously
The device gate electric charge that the first conductivity type polysilicon and the second conductivity type polysilicon grid of design reduce, improves devices switch
Characteristic.
To achieve these goals, the technical solution adopted by the present invention is：
A kind of double groove carborundum IGBT devices of low on-resistance, small grid electric charge, including：
First conductivity type polysilicon grid；
Wrap up the groove gate medium of the first conductivity type polysilicon grid；
It is arranged on the source electrode of the symmetrical structure of groove gate medium both sides；
The first conduction type source contact zone, the second conduction type base region and the heavy doping second for being arranged on source bottom are conductive
Type trench area；
The second conduction type grid oxygen protection zone below groove gate medium is successively set on from top to bottom, the first conduction type floats
Move area, the second conductivity type substrate and drain electrode；
Characterized in that,
The second conductivity type polysilicon grid is provided with below the first conductivity type polysilicon grid, the groove grid are situated between
Matter wraps up the second conductivity type polysilicon grid；
The first conduction type is provided between the second conduction type grid oxygen protection zone and the first conduction type drift region
Wrap up area.
The bottom of the first conduction type source contact zone and source electrode, the top of the second conduction type base region and heavy doping
The bottom of the contacts side surfaces of second conduction type trench area, heavy doping the second conduction type trench area and source electrode, first are led
The side of electric type source contact zone and the contacts side surfaces of the second conduction type base region, the thickness of the conduction type base region of heavy doping second
Degree is equal to the first conduction type source contact zone and the thickness sum of the second conduction type base region.
The second conduction type grid oxygen protection zone and the first conduction type parcel area's partial intersection, wherein, described first
Conduction type parcel area is arranged among the first conduction type drift region, and the second conduction type grid oxygen protection zone is wrapped up.
First conduction type parcel area's doping concentration is higher than the first conduction type drift region concentration, the first conduction type
It is deep 0 μm -0.5 μm compared with the second conduction type grid oxygen protection zone to wrap up regional depth, the first conduction type wraps up sector width compared with second
Conduction type grid oxygen protection zone is wide 0.1 μm -0.5 μm.
The first conductivity type polysilicon grid through deposit formed, thickness be 0.3 μm -1.2 μm, doping concentration be 1 ×
1015cm-3-1×1017cm-3；The second conductivity type polysilicon grid is formed through deposit, as the first conductivity type polysilicon
Below grid, thickness is 0.1 μm -0.5 μm, and doping concentration is 1 × 1019cm-3-3×1019cm-3。
The second conduction type of heavy doping trench area thickness is 0.7 μm -2.5 μm, and doping concentration is 1 × 1019cm-3-1
×1020cm-3。
The groove gate medium is SiO2, formed through thermal oxidation technology, the first conductivity type polysilicon grid and the second conduction
Type polysilicon grid is full of whole groove structure by deposit.
Second conductivity type substrate is that thickness is 100 μm -500 μm, and doping concentration is 1 × 1019cm-3-1×
1020cm-3Silicon carbide substrates piece；The first conduction type drift region thickness is 10 μm -30 μm, and doping concentration is 1 × 1014cm-3-1×1016cm-3；Second conduction type grid oxygen protection zone thickness is 0.1 μm -0.5 μm, and doping concentration is 1 × 1019cm-3-1×1020cm-3；The second conduction type base region thickness is 0.5 μm~1 μm, and doping concentration is 1 × 1017cm-3-3×
1017cm-3.First conduction type source contact zone thickness is 0.2 μm, and doping concentration is 1 × 1019cm-3-1×1020cm-3。
The present invention can further set up the first conductive type buffer layer structure below the first conduction type drift region, its
Thickness is much smaller than the first conduction type drift region, is 0.5 μm~2 μm, and doping concentration is more than the first conduction type drift region, is 1
×1016cm-3~9 × 1016cm-3。
In above-mentioned technical proposal, for N-type groove power IGBT device, first conduction type refers to N-type, and second is conductive
Type is p-type；And for p-type groove power IGBT device, first conduction type refers to p-type, and the second conduction type is N-type..
Present invention also offers a kind of low on-resistance, the preparation of double groove carborundum IGBT devices of small grid electric charge
Method, comprise the following steps：
1) the second conductive silicon carbide epitaxial layer and the first conduction are generated in the first conductivity type silicon carbide drift layer extension
Silicon carbide silicon epitaxy layer, respectively as the second conduction type base region and the first conduction type source contact zone；
2) by mask, groove of the depth more than the second conductivity type silicon carbide extension layer depth is etched；
3) conductivity type silicon carbides of sputtering sedimentation second in groove, as the second conduction type of heavy doping trench area；
4) window of the depth more than the second conductivity type silicon carbide extension layer depth described in epitaxial layer is gone out by mask etching；
5) the window inner surface forms layer of silicon dioxide cushion；
6) the first conductive-type silicon carbide region is formed using angled the first conductive-type of ion implanting impurity, i.e., first is conductive
Type wraps up area；
7) conductive type impurity of ion implanting second forms the second conductivity type silicon carbide area, i.e. the second conduction type grid oxygen
Protection zone；
8) etching removes window surface silica cushion；
9) thermal oxide forms gate dielectric layer, i.e. groove gate medium；
10) deposit forms the first conductivity type polysilicon and the second conductivity type polysilicon in the window, i.e., second leads
Electric type polysilicon grid and the first conductivity type polysilicon grid；
11) electrode is prepared.
Compared with prior art, the beneficial effects of the invention are as follows：
Utilize first of one layer of doping concentration of parcel higher than drift region concentration around the second conduction type grid oxygen protection zone
Conductivity type regions, reduce because of the second being introduced into for conduction type grid oxygen protection zone and space charge caused by drift region
Area.Also, unspent part will be significantly better than drift for the transmitting effect of electric current in the first conduction type wraps up region
Area is moved, and then the conducting resistance of device entirety is greatly reduced.Because the first conduction type parcel region area is smaller, thus to device
Breakdown voltage and switching characteristic influence smaller.The space-charge region that second conduction type trench area is formed effectively shields grid oxygen electricity
, protect grid oxygen.The space charge formed using the first conductivity type polysilicon grid and the second conductivity type polysilicon grid
Area, grid and the coupling of drain electrode are reduced, thus reduce device gate electric charge, improve the switching characteristic of device.
Brief description of the drawings
Fig. 1 is a traditional silicon carbide power IGBT structure.
Fig. 2 is a kind of low on-resistance of the present invention, double groove carborundum IGBT device structure schematic diagrames of small grid electric charge.
Fig. 3 is a kind of low on-resistance of the present invention, double groove carborundum IGBT device preparation method flows of small grid electric charge
Schematic diagram.
Embodiment
Describe embodiments of the present invention in detail with reference to the accompanying drawings and examples.
Traditional silicon carbide power IGBT structure as shown in figure 1, including：
First conductivity type polysilicon grid 5；
Wrap up the groove gate medium 7 of the first conductivity type polysilicon grid 5；
It is arranged on the source electrode 1 of the symmetrical structure of the both sides of groove gate medium 7；
It is arranged on the first conduction type source contact zone 2, the second conduction type base region 3 and the heavy doping second of the bottom of source electrode 1
Conduction type trench area 4；First conduction type source contact zone 2 and the bottom of source electrode 1, the top of the second conduction type base region 3 with
And the contacts side surfaces of the second conduction type of heavy doping trench area 4, the second conduction type of heavy doping trench area 4 and source electrode 1
The contacts side surfaces of bottom, the side of the first conduction type source contact zone 2 and the second conduction type base region 3, heavy doping second are led
The thickness of electric type trench area 4 is more than the thickness sum of the first conduction type source contact zone 2 and the second conduction type base region 3.
The second conduction type grid oxygen protection zone 8, the first conduction type of the lower section of groove gate medium 7 are successively set on from top to bottom
Drift region 10, the second conductivity type substrate 11 and drain electrode 12；
Reference picture 2, the present invention, which improves, to be, the second conduction type is set below the first conductivity type polysilicon grid 5
Polysilicon gate 6, groove gate medium 7 wrap up the second conductivity type polysilicon grid 6；Groove gate medium 7 is SiO2, through thermal oxidation technology
Formed, the first conductivity type polysilicon grid 5 and the second conductivity type polysilicon grid 6 are full of whole groove knot by deposit
Structure.
First conduction type bag is set between the second conduction type grid oxygen protection zone 8 and the first conduction type drift region 10
Wrap up in area 9.Second conduction type grid oxygen protection zone 8 and the first conduction type parcel partial intersection of area 9, wherein, described first is conductive
Type parcel area 9 is arranged among the first conduction type drift region 10, and the second conduction type grid oxygen protection zone 8 is wrapped up.
The parameter request of the present invention is as follows：
1st, the first conductivity type polysilicon grid 5 through deposit formed, thickness be 0.3 μm -1.2 μm, doping concentration be 1 ×
1015cm-3-1×1017cm-3。
2nd, the second conductivity type polysilicon grid 6 is formed through deposit, below the first conductivity type polysilicon grid 5,
Thickness is 0.1 μm -0.5 μm, and doping concentration is 1 × 1019cm-3-3×1019cm-3。
3rd, the thickness of the second conduction type of heavy doping trench area 4 is 0.7 μm -2.5 μm, and doping concentration is 1 × 1019cm-3-1×
1020cm-3。
4th, the thickness of the first conduction type source contact zone 2 is 0.2 μm, and doping concentration is 1 × 1019cm-3-1×1020cm-3。
5th, the thickness of the second conduction type base region 3 is 0.5 μm~1 μm, and doping concentration is 1 × 1017cm-3-3×1017cm-3。
6th, the thickness of the second conduction type grid oxygen protection zone 8 is 0.1 μm -0.5 μm, and doping concentration is 1 × 1019cm-3-1×
1020cm-3。
7th, the thickness of the first conduction type drift region 10 is 10 μm -30 μm, and doping concentration is 1 × 1014cm-3-1×1016cm-3。
8th, the second conductivity type substrate 11 is that thickness is 100 μm -500 μm, and doping concentration is 1 × 1019cm-3-1×
1020cm-3Silicon carbide substrates piece.
9th, the first conduction type parcel doping concentration of area 9 is higher than the concentration of the first conduction type drift region 10, the first conductive-type
It is deep 0 μm -0.5 μm compared with the second conduction type grid oxygen protection zone 8 that type wraps up the depth of region 9, the first conduction type wrap up the width of area 9 compared with
Second conduction type grid oxygen protection zone 8 is wide 0.1 μm -0.5 μm.
According to said structure, due to wrapping up one layer of doping concentration around the second conduction type grid oxygen protection zone 8 higher than the
First conductivity type regions of the concentration of one conduction type drift region 10 --- the first conduction type wrap up area 9, thus reduce because
Second being introduced into for conduction type grid oxygen protection zone 8 and in the first conduction type drift region 10 caused space-charge region.
Also, unspent part is obvious good for the transmitting effect of electric current in the first conduction type wraps up area 9
Conducting resistance in the first conduction type drift region 10, and then device entirety is greatly reduced.
Because the first conduction type parcel area of area 9 is smaller, thus device electric breakdown strength and switching characteristic are influenceed smaller.
Meanwhile the space-charge region that the second conduction type of heavy doping trench area 4 is formed effectively shields oxide field, protects grid
Oxygen.The space-charge region that first conductivity type polysilicon grid 5 and the second conductivity type polysilicon grid 6 are formed, reduces grid
Pole and the coupling of drain electrode, thus device gate electric charge is reduced, improve the switching characteristic of device.
The preparation method of the present invention is as shown in figure 3, comprise the following steps：
1) the second conductive silicon carbide epitaxial layer and the first conduction are generated in the first conductivity type silicon carbide drift layer extension
Silicon carbide silicon epitaxy layer, respectively as the second conduction type base region 3 and the first conduction type source contact zone 2；
2) by mask, groove of the depth more than the second conductivity type silicon carbide extension layer depth is etched；
3) conductivity type silicon carbides of sputtering sedimentation second in groove, as the second conduction type of heavy doping trench area 4；
4) window of the depth more than the second conductivity type silicon carbide extension layer depth described in epitaxial layer is gone out by mask etching；
5) the window inner surface forms layer of silicon dioxide cushion；
6) the first conductive-type silicon carbide region is formed using angled the first conductive-type of ion implanting impurity, i.e., first is conductive
Type wraps up area 9；
7) conductive type impurity of ion implanting second forms the second conductivity type silicon carbide area, i.e. the second conduction type grid oxygen
Protection zone 8；
8) etching removes window surface silica cushion；
9) thermal oxide forms gate dielectric layer, i.e. groove gate medium 7；
10) deposit forms the first conductivity type polysilicon and the second conductivity type polysilicon in the window, i.e., second leads
The electric conductivity type polysilicon grid 5 of type polysilicon grid 6 and first；
11) electrode is prepared.
Claims (10)
1. double groove carborundum IGBT devices of a kind of low on-resistance, small grid electric charge, including：
First conductivity type polysilicon grid (5)；
Wrap up the groove gate medium (7) of the first conductivity type polysilicon grid (5)；
It is arranged on the source electrode (1) of the symmetrical structure of groove gate medium (7) both sides；
It is arranged on the first conduction type source contact zone (2), the second conduction type base region (3) and the heavy doping of source electrode (1) bottom
Two conduction type trench areas (4)；
The second conduction type grid oxygen protection zone (8) below groove gate medium (7), the first conduction type are successively set on from top to bottom
Drift region (10), the second conductivity type substrate (11) and drain electrode (12)；
Characterized in that,
The second conductivity type polysilicon grid (6), the groove grid are provided with below the first conductivity type polysilicon grid (5)
Medium (7) wraps up the second conductivity type polysilicon grid (6)；
The first conductive-type is provided between the second conduction type grid oxygen protection zone (8) and the first conduction type drift region (10)
Type wraps up area (9).
2. double groove carborundum IGBT devices of low on-resistance, small grid electric charge according to claim 1, it is characterised in that
The first conduction type source contact zone (2) and the bottom of source electrode (1), the top of the second conduction type base region (3) and heavily doped
The contacts side surfaces of miscellaneous second conduction type trench area (4), the second conduction type of heavy doping trench area (4) and source electrode (1)
The contacts side surfaces of bottom, the side of the first conduction type source contact zone (2) and the second conduction type base region (3), heavy doping
The thickness of two conduction type base regions (4) is more than the first conduction type source contact zone (2) and the thickness of the second conduction type base region (3)
Sum.
3. double groove carborundum IGBT devices of low on-resistance, small grid electric charge according to claim 1, it is characterised in that
The second conduction type grid oxygen protection zone (8) and the first conduction type parcel area (9) partial intersection, wherein, described first leads
Electric type parcel area (9) is arranged among the first conduction type drift region (10), and the second conduction type grid oxygen protection zone (8) is wrapped
Wrap up in.
4. double groove carborundum IGBT devices of low on-resistance, small grid electric charge according to claim 1, it is characterised in that
Described first conduction type parcel area (9) doping concentration is higher than first conduction type drift region (10) concentration, the first conduction type
It is deep 0 μm -0.5 μm compared with the second conduction type grid oxygen protection zone (8) to wrap up region (9) depth, the first conduction type parcel area (9) is wide
Degree is wide 0.1 μm -0.5 μm compared with the second conduction type grid oxygen protection zone (8).
5. double groove carborundum IGBT devices of low on-resistance, small grid electric charge according to claim 1, it is characterised in that
The first conductivity type polysilicon grid (5) is formed through deposit, and thickness is 0.3 μm -1.2 μm, and doping concentration is 1 × 1015cm-3-1×1017cm-3；The second conductivity type polysilicon grid (6) is formed through deposit, as the first conductivity type polysilicon grid
Below pole (5), thickness is 0.1 μm -0.5 μm, and doping concentration is 1 × 1019cm-3-3×1019cm-3；The heavy doping second is conductive
Type trench area (4) thickness is 0.7 μm -2.5 μm, and doping concentration is 1 × 1019cm-3-1×1020cm-3。
6. double groove carborundum IGBT devices of low on-resistance, small grid electric charge according to claim 1, it is characterised in that
Below the first conduction type drift region (10), the first conductive type buffer layer structure is set up, its thickness is conductive much smaller than first
Type drift region (10), it is 0.5 μm~2 μm, doping concentration is more than the first conduction type drift region (10), is 1 × 1016cm-3~
9×1016cm-3。。
7. double groove carborundum IGBT devices of low on-resistance, small grid electric charge according to claim 1, it is characterised in that
The groove gate medium (7) is SiO2, formed through thermal oxidation technology, the first conductivity type polysilicon grid (5) and the second conductive-type
Type polycrystalline silicon gate (6) is full of whole groove structure by deposit.
8. double groove carborundum IGBT devices of low on-resistance, small grid electric charge according to claim 1, it is characterised in that
Second conductivity type substrate (11) is that thickness is 100 μm -500 μm, and doping concentration is 1 × 1019cm-3-1×1020cm-3Carbon
Silicon substrate piece；First conduction type drift region (10) thickness is 10 μm -30 μm, and doping concentration is 1 × 1014cm-3-1×
1016cm-3；Second conduction type grid oxygen protection zone (8) thickness is 0.1 μm -0.5 μm, and doping concentration is 1 × 1019cm-3-1
×1020cm-3；First conduction type source contact zone (2) thickness is 0.2 μm, and doping concentration is 1 × 1019cm-3-1×
1020cm-3；Second conduction type base region (3) thickness is 0.5 μm~1 μm, and doping concentration is 1 × 1017cm-3-3×1017cm-3。
9. double groove carborundum IGBT devices of low on-resistance, small grid electric charge according to claim 1, it is characterised in that
For N-type groove power IGBT device, first conduction type refers to N-type, and the second conduction type is p-type；And for p-type groove
Power IGBT device, first conduction type refer to p-type, and the second conduction type is N-type.
10. the preparation method of double groove carborundum IGBT devices of low on-resistance described in claim 1, small grid electric charge, it is special
Sign is, comprises the following steps：
1) the second conductive silicon carbide epitaxial layer and the first conduction type are generated in the first conductivity type silicon carbide drift layer extension
Silicon carbide epitaxial layers, respectively as the second conduction type base region (3) and the first conduction type source contact zone (2)；
2) by mask, groove of the depth more than the second conductivity type silicon carbide extension layer depth is etched；
3) conductivity type silicon carbides of sputtering sedimentation second in groove, as the second conduction type of heavy doping trench area (4)；
4) window of the depth more than the second conductivity type silicon carbide extension layer depth described in epitaxial layer is gone out by mask etching；
5) the window inner surface forms layer of silicon dioxide cushion；
6) the first conductive-type silicon carbide region, i.e. the first conduction type are formed using angled the first conductive-type of ion implanting impurity
Wrap up area (9)；
7) conductive type impurity of ion implanting second forms the second conductivity type silicon carbide area, i.e. the second conduction type grid oxygen protection
Area (8)；
8) etching removes window surface silica cushion；
9) thermal oxide forms gate dielectric layer, i.e. groove gate medium (7)；
10) deposit forms the first conductivity type polysilicon and the second conductivity type polysilicon, i.e. the second conductive-type in the window
Type polycrystalline silicon gate (6) and the first conductivity type polysilicon grid (5)；
11) electrode is prepared.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585564A (en) * | 2018-12-26 | 2019-04-05 | 芜湖启迪半导体有限公司 | A kind of silicon carbide MOSFET device and preparation method thereof |
| CN117497408A (en) * | 2023-12-28 | 2024-02-02 | 深圳天狼芯半导体有限公司 | HK-IGBT, preparation method thereof and chip |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109585564A (en) * | 2018-12-26 | 2019-04-05 | 芜湖启迪半导体有限公司 | A kind of silicon carbide MOSFET device and preparation method thereof |
| CN117497408A (en) * | 2023-12-28 | 2024-02-02 | 深圳天狼芯半导体有限公司 | HK-IGBT, preparation method thereof and chip |
| CN117497408B (en) * | 2023-12-28 | 2024-04-19 | 深圳天狼芯半导体有限公司 | HK-IGBT, preparation method thereof and chip |
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