CN107731745B - Preparation method of vase-shaped contact hole - Google Patents
Preparation method of vase-shaped contact hole Download PDFInfo
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- CN107731745B CN107731745B CN201710972644.0A CN201710972644A CN107731745B CN 107731745 B CN107731745 B CN 107731745B CN 201710972644 A CN201710972644 A CN 201710972644A CN 107731745 B CN107731745 B CN 107731745B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 19
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 17
- 150000004767 nitrides Chemical class 0.000 claims abstract description 16
- 239000002131 composite material Substances 0.000 claims abstract description 11
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention relates to the technical field of semiconductors, in particular to a preparation method of a vase-shaped contact hole, which comprises the following steps: step S1, providing a composite film, wherein the composite film comprises a metal layer and a layer to be etched covering the metal layer, and the layer to be etched comprises a first nitride layer, a first oxide layer, a second nitride layer and a second oxide layer which are sequentially stacked; step S2, etching the layer to be etched by using an etching body with high etching ratio of oxide to nitride to form at least one vase-shaped through hole extending to the upper surface of the metal layer; step S3, self-calibration is carried out on the vase-shaped through hole; step S4, covering a first protective layer on the side wall of the vase-shaped through hole by adopting a first physical vapor deposition process; step S5, covering a second protective layer on the bottom of the vase-shaped through hole by adopting a second physical vapor deposition process; step S6, filling the vase-shaped through holes to form vase-shaped contact holes; the contact performance with the metal layer at the bottom is good, and the conductivity is good.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of a vase-shaped contact hole.
Background
In semiconductor manufacturing, a contact hole is a common structure and is generally used for connecting conductive media of a bottom layer and a top layer, so the performance of a device can be affected by the conductivity of the contact hole, and the conductivity of the contact hole can even cause the failure of the whole wafer.
The contact hole formed by the traditional etching method is difficult to meet the connection requirement with the metal at the bottom in the aspect of morphology, particularly when the metal at the bottom is copper, the back etching of a bottom insulating layer is easy to generate, and the problems of oxidation of the exposed copper metal and uneven surface are also generated.
Disclosure of Invention
In order to solve the problems, the invention provides a preparation method of a vase-shaped contact hole, which comprises the following steps:
step S1, providing a composite film, wherein the composite film comprises a metal layer and a layer to be etched covering the metal layer, and the layer to be etched comprises a first nitride layer, a first oxide layer, a second nitride layer and a second oxide layer which are sequentially stacked;
step S2, etching the layer to be etched by using an etching body with high etching ratio of oxide to nitride to form at least one vase-shaped through hole extending to the upper surface of the metal layer;
step S3, self-calibration is carried out on the vase-shaped through hole;
step S4, covering a first protective layer on the side wall of the vase-shaped through hole by adopting a first physical vapor deposition process;
step S5, covering a second protective layer on the bottom of the vase-shaped through hole by adopting a second physical vapor deposition process;
and step S6, filling the vase-shaped through hole with a metal material to form a vase-shaped contact hole.
In the preparation method, the first physical vapor deposition process is to bombard the side wall of the vase-shaped through hole with argon atoms.
In the above preparation method, the flow rate of the argon atoms is 180 to 220 sccm.
In the above preparation method, the second physical vapor deposition process is to reduce the exposed upper surface of the metal layer by using nitrogen or hydrogen.
In the preparation method, under the condition of adopting the nitrogen, the flow rate is 280-320 sccm;
under the condition of adopting the hydrogen, the flow rate is 380-420 sccm.
The preparation method above, wherein an intermediate step between the step S1 and the step S2 is further included:
sequentially preparing a bottom anti-reflection layer and a photoresist layer on the upper surface of the layer to be etched;
exposing and developing the photoresist layer;
in step S2, the layer to be etched is etched together with the bottom anti-reflection layer.
In the preparation method, the time for preparing the bottom anti-reflection layer is 73-78 s.
In the above preparation method, the gas used for preparing the bottom anti-reflection layer is nitrogen;
the flow rate of the nitrogen is 430-470 sccm.
In the above preparation method, the gas used for preparing the bottom anti-reflection layer is hydrogen;
the flow rate of the hydrogen is 130-170 sccm.
Has the advantages that: the preparation method of the vase-shaped contact hole provided by the invention has good contact performance with the metal layer at the bottom and good conductivity.
Drawings
FIG. 1 is a flow chart illustrating steps of a method for forming a vase-shaped contact hole according to an embodiment of the present invention;
FIGS. 2 to 4 are schematic structural diagrams of steps of the vase-shaped contact hole preparation in one embodiment of the present invention.
Detailed Description
The invention is further illustrated with reference to the following figures and examples.
In a preferred embodiment, as shown in fig. 1, a method for forming a vase-shaped contact hole is provided, and the formed structure can be as shown in fig. 2 to 4, wherein the method can include:
step S1, providing a composite film, where the composite film includes a metal layer 10 and a layer to be etched 20 covering the metal layer 10, and the layer to be etched 20 includes a first nitride layer 21, a first oxide layer 22, a second nitride layer 23, and a second oxide layer 24, which are stacked in sequence;
step S2, etching the layer to be etched 20 by using an etching body with high etching ratio of oxide to nitride, and forming at least one vase-shaped through hole H extending to the upper surface of the metal layer 10;
step S3, self-calibration is carried out on the vase-shaped through hole H;
step S4, covering a first protective layer PT1 on the side wall of the vase-shaped through hole H by adopting a first physical vapor deposition process;
step S5, covering a second protective layer PT2 at the bottom of the vase-shaped through hole H by adopting a second physical vapor deposition process;
and step S6, filling the vase-shaped through holes H to form vase-shaped contact holes.
In the above technical solution, the composite film may further include other structures for manufacturing a semiconductor device, and these structures belong to the conventional technologies in the art and are not described herein again; the vase-shaped through hole H can be formed by two times of etching, and because the aperture at the bottom of the vase-shaped through hole H is small and the aperture at the top of the vase-shaped through hole H is large, the blocking areas of the photoresist etched twice are different; the vase-shaped through hole H can be self-aligned by using an etching substance with good etching directionality, and the self-aligned first nitride layer 21 cannot be etched back.
In a preferred embodiment, the first pvd process bombards the sidewalls of the vase-shaped via H with argon atoms to form the first passivation layer PT1, which can make the sidewalls of the vase-shaped via H smooth.
In the above embodiment, the flow rate of the argon atoms is preferably 180 to 220sccm (standard liter per minute), such as 190sccm, or 195sccm, or 200sccm, or 205sccm, or 210 sccm.
In a preferred embodiment, the second physical vapor deposition process is a reduction of the exposed top surface of the metal layer with nitrogen or hydrogen.
In the above embodiment, preferably, under the condition of using nitrogen gas, the flow rate is 280-320 sccm, such as 280sccm, 290sccm, 300sccm, 310sccm, 220sccm, etc.;
in the case of using hydrogen, the flow rate is 380-420 sccm, such as 380sccm, 390sccm, 400sccm, 410sccm, 420sccm, etc.
In a preferred embodiment, the step S1 and the step S2 further include an intermediate step:
sequentially preparing a bottom anti-reflection layer and a photoresist layer on the upper surface of the layer to be etched 20;
exposing and developing the photoresist layer;
in step S2, the layer to be etched 10 is etched together with the bottom anti-reflection layer.
In the above embodiment, the time for preparing the bottom anti-reflection layer is preferably 73 to 78s, for example 73s, or 74s, or 75s, or 76s, or 77s, or 78 s.
In the above embodiment, preferably, the gas used for preparing the bottom anti-reflection layer is nitrogen;
the flow rate of the nitrogen gas is 430-470 sccm, such as 430sccm, 440sccm, 450sccm, 460sccm, 470sccm, etc.
In the above embodiment, preferably, the gas used for preparing the bottom anti-reflection layer is hydrogen;
the flow rate of the hydrogen gas is 130-170 sccm, such as 130sccm, 140sccm, 150sccm, 160sccm, 170sccm, etc.
Specifically, the pressure used for preparing the bottom anti-reflection layer may be 70mTorr (millitorr), and the radio frequency power of 60MHz using the radio frequency may be 1200W; the pressure adopted by the etching in the step S2 can be 70mTorr, the radio frequency power of 2MHz adopting the radio frequency can be 2000W, the radio frequency power of 27MHz adopting the radio frequency can be 1600W, and the preparation time can be 26S; the pressure for preparing the photoresist for the first time can be 400mTorr, the radio frequency power of 60MHz adopting the radio frequency can be 1200W, the adopted gas can be oxygen, and the preparation time can be 40 s; the pressure for preparing the photoresist for the second time can be 200mTorr, the radio frequency power of 60MHz adopting the radio frequency can be 1200W, the adopted gas can be oxygen, and the preparation time can be 30 s; the pressure adopted by self-calibration can be 30mTorr, the radio frequency power of 2MHz adopting the radio frequency can be 100W, the radio frequency power of 27MHz adopting the radio frequency can be 200W, and the time can be 35 s; the first physical vapor deposition process may employ a pressure of 40mTorr, a radio frequency power of 27MHz using a radio frequency of 300W, and a time of 20 s; the second physical vapor deposition process may employ a pressure of 200mTorr, a RF power of 27MHz of a RF frequency of 250W, and a time of 20 s.
In summary, the method for preparing a vase-shaped contact hole provided by the invention comprises the following steps: step S1, providing a composite film, wherein the composite film comprises a metal layer and a layer to be etched covering the metal layer, and the layer to be etched comprises a first nitride layer, a first oxide layer, a second nitride layer and a second oxide layer which are sequentially stacked; step S2, etching the layer to be etched by using an etching body with high etching ratio of oxide to nitride to form at least one vase-shaped through hole extending to the upper surface of the metal layer; step S3, self-calibration is carried out on the vase-shaped through hole; step S4, covering a first protective layer on the side wall of the vase-shaped through hole by adopting a first physical vapor deposition process; step S5, covering a second protective layer on the bottom of the vase-shaped through hole by adopting a second physical vapor deposition process; step S6, filling the vase-shaped through holes to form vase-shaped contact holes; the contact performance with the metal layer at the bottom is good, and the conductivity is good.
While the specification concludes with claims defining exemplary embodiments of particular structures for practicing the invention, it is believed that other modifications will be made in the spirit of the invention. While the above invention sets forth presently preferred embodiments, these are not intended as limitations.
Various alterations and modifications will no doubt become apparent to those skilled in the art after having read the above description. Therefore, the appended claims should be construed to cover all such variations and modifications as fall within the true spirit and scope of the invention. Any and all equivalent ranges and contents within the scope of the claims should be considered to be within the intent and scope of the present invention.
Claims (9)
1. A preparation method of a vase-shaped contact hole is characterized by comprising the following steps:
step S1, providing a composite film, wherein the composite film comprises a metal layer and a layer to be etched covering the metal layer, and the layer to be etched comprises a first nitride layer, a first oxide layer, a second nitride layer and a second oxide layer which are sequentially stacked;
step S2, etching the layer to be etched by using an etching body with high etching ratio of oxide to nitride to form at least one vase-shaped through hole extending to the upper surface of the metal layer, wherein the aperture of the upper half part of the vase-shaped through hole is larger than that of the lower half part of the vase-shaped through hole, and the upper half part of the vase-shaped through hole has a preset taper;
step S3, self-calibration is carried out on the vase-shaped through hole;
step S4, covering a first protective layer on the side wall of the vase-shaped through hole by adopting a first physical vapor deposition process;
step S5, covering a second protective layer on the bottom of the vase-shaped through hole by adopting a second physical vapor deposition process;
and step S6, filling the vase-shaped through holes to form vase-shaped contact holes.
2. The method according to claim 1, wherein the first physical vapor deposition process is to bombard the sidewall of the vase-shaped through hole with argon atoms.
3. The method according to claim 2, wherein the flow rate of the argon atoms is 180 to 220 sccm.
4. The method according to claim 1, wherein the second physical vapor deposition process is a process of reducing the exposed upper surface of the metal layer using nitrogen or hydrogen.
5. The method according to claim 4, wherein the nitrogen gas is supplied at a flow rate of 280 to 320 sccm;
under the condition of adopting the hydrogen, the flow rate is 380-420 sccm.
6. The method as claimed in claim 1, further comprising an intermediate step between the step S1 and the step S2:
sequentially preparing a bottom anti-reflection layer and a photoresist layer on the upper surface of the layer to be etched;
exposing and developing the photoresist layer;
in step S2, the layer to be etched is etched together with the bottom anti-reflection layer.
7. The method according to claim 6, wherein the time for preparing the bottom anti-reflection layer is 73 to 78 seconds.
8. The method according to claim 6, wherein the gas used for preparing the bottom anti-reflection layer is nitrogen;
the flow rate of the nitrogen is 430-470 sccm.
9. The method according to claim 6, wherein the gas used for preparing the bottom anti-reflection layer is hydrogen;
the flow rate of the hydrogen is 130-170 sccm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710972644.0A CN107731745B (en) | 2017-10-18 | 2017-10-18 | Preparation method of vase-shaped contact hole |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710972644.0A CN107731745B (en) | 2017-10-18 | 2017-10-18 | Preparation method of vase-shaped contact hole |
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| CN107731745B true CN107731745B (en) | 2020-03-10 |
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| CN108878352B (en) * | 2018-06-26 | 2021-01-12 | 武汉新芯集成电路制造有限公司 | Appearance structure of contact hole |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101630656A (en) * | 2008-07-15 | 2010-01-20 | 中芯国际集成电路制造(上海)有限公司 | Methods for forming contact hole and dual damascene structure |
| CN102446846A (en) * | 2011-11-28 | 2012-05-09 | 上海华力微电子有限公司 | Method for achieving high-performance copper interconnection by utilizing upper mask |
| CN102931051A (en) * | 2012-10-09 | 2013-02-13 | 上海华力微电子有限公司 | Method for increasing MOM (Metal-Oxide-Metal) capacitance density |
| CN104979271A (en) * | 2014-04-03 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | Interconnection structure formation method |
| CN105097650A (en) * | 2014-05-04 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Formation method of contact plug |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6723639B1 (en) * | 2001-05-24 | 2004-04-20 | Taiwan Semiconductor Manufacturing Company | Prevention of post CMP defects in Cu/FSG process |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101630656A (en) * | 2008-07-15 | 2010-01-20 | 中芯国际集成电路制造(上海)有限公司 | Methods for forming contact hole and dual damascene structure |
| CN102446846A (en) * | 2011-11-28 | 2012-05-09 | 上海华力微电子有限公司 | Method for achieving high-performance copper interconnection by utilizing upper mask |
| CN102931051A (en) * | 2012-10-09 | 2013-02-13 | 上海华力微电子有限公司 | Method for increasing MOM (Metal-Oxide-Metal) capacitance density |
| CN104979271A (en) * | 2014-04-03 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | Interconnection structure formation method |
| CN105097650A (en) * | 2014-05-04 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Formation method of contact plug |
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Address after: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Xinxin Integrated Circuit Co.,Ltd. Country or region after: China Address before: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Country or region before: China |