CN107731573A - A kind of pulse storage capacitor method for packing and encapsulating structure - Google Patents
A kind of pulse storage capacitor method for packing and encapsulating structure Download PDFInfo
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- CN107731573A CN107731573A CN201711028702.0A CN201711028702A CN107731573A CN 107731573 A CN107731573 A CN 107731573A CN 201711028702 A CN201711028702 A CN 201711028702A CN 107731573 A CN107731573 A CN 107731573A
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- storage capacitor
- pulse storage
- pulse
- embedding
- encapsulating housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/003—Apparatus or processes for encapsulating capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/10—Housing; Encapsulation
Abstract
The invention provides a kind of pulse storage capacitor method for packing and encapsulating structure, belong to storage capacitor technical field.It the described method comprises the following steps：Multiple pulse storage capacitors are piled up together and fixed by conductor in parallel, form pulse energy capacitance set；To capacitance group, at least one positive terminal lead and an at least negative pole end lead are set；Pulse energy capacitance set is encapsulated in encapsulating housing by embedding glue, positive terminal lead and negative pole end lead is leaked outside encapsulating housing.By the way that individual pulse storage capacitor is piled up, multiple pulse storage capacitors after piling up are packaged, and it is attached by the positive and negative electrode lead of leakage with miscellaneous part, encapsulating housing is fixed by fixture, both the three-dimensional space arrangement of pulse storage capacitor had been realized, space availability ratio has been improved, in turn simplify the fixed installation mode of electric capacity, pulse storage capacitor is not almost stressed, substantially increase the security reliability of amplifier operation.
Description
Technical field
The present invention relates to the secondary encapsulation method and encapsulating structure of a kind of space pulse storage capacitor, belong to storage capacitor
Technical field.
Background technology
Pulsed TWT amplifier has efficiency high, in light weight and low cost and other advantages, is widely used in radar satellite,
Its major function is that user link downstream signal is carried out into Pulse Power Magnification, while can carry out the amplitude and phase of radio-frequency channel
Position adjustment, is sent into rear class antenna subsystem.To realize radio frequency link normal work, TWT Power in pulsed TWT amplifier
To change power requirement output stabilization and reach upper hectowatt, the power supply must use electronic power regulator (EPC) to the one of satellite
Secondary bus carries out decompression transformation, to meet voltage x current requirement needed for radio frequency link.For satellite busbar voltage is transformed into radio frequency
The required voltage of link, pre- voltage stabilizing is generally carried out using storage capacitor using circuit design, storage capacitor is opened up in power conversion
Main function is flutterred as energy storage and lasting electric current is kept in inductance charge and discharge process and filters out pulse power electric current.
In being applied in space, because device limitation may be selected in storage capacitor, the satellite for being 25V in a busbar voltage
In platform application, 10 model CAK38-125V-82uF-K of generally use non solid electrolyte all tantalum capacitor is combined into
Storage capacitor uses.Needed as shown in figure 1, because the whole tantalum capacitor can only be mounted directly on a printed circuit board, during installation
Type is made to the bending of full tantalum electric capacity, and pcb board surface is fixed on flatiron manual welding, fixed difficulty is big, in circuit requirements processing
, it is necessary to which more tantalum electrochemical capacitors are combined during upper hectowatt power, the installation of its own Printed Circuit Board Design can not meet to defend
Small form factor requirements between starry sky, restrict its application.
The content of the invention
To solve problems of the prior art, the present invention proposes a kind of pulse storage capacitor method for packing and encapsulation
Structure, by the way that individual pulse storage capacitor is piled up, multiple pulse storage capacitors after piling up are packaged, and are passed through
Positive and negative electrode lead and the miscellaneous part of leakage are attached, and encapsulating housing is fixed by fixture, both realizes pulse
The three-dimensional space arrangement of storage capacitor, improves space availability ratio, in turn simplify the fixed installation mode of electric capacity, make pulse
Storage capacitor does not almost stress, and substantially increases the security reliability of amplifier operation.
The present invention includes following technical scheme：
A kind of pulse storage capacitor method for packing, comprises the following steps：
Step 1, multiple pulse storage capacitors are piled up together and fixed by conductor in parallel, form pulse storage capacitor
Group；
Step 2, to the capacitance group at least one positive terminal lead and an at least negative pole end lead are set；
Step 3, by embedding glue the pulse energy capacitance set is encapsulated in encapsulating housing, draws the positive terminal
Line and the leakage of negative pole end lead are outside the encapsulating housing.
In an alternative embodiment, multiple pulse storage capacitors being piled up together described in step 1, including：Will be multiple
Pulse storage capacitor is located at the same side according to positive terminal pin, and the mode that negative pole end pin is located at opposite side is piled up together.
In an alternative embodiment, before piling up multiple pulse storage capacitors together described in step 1, also wrap
Include：
The pin of the pulse storage capacitor is trimmed, it is 2-4mm to make the pin length after trimming.
In an alternative embodiment, after piling up multiple pulse storage capacitors together described in step 1, at least two are formed
Layer, two array structures, it is described to be fixed by conductor in parallel, including：
The homopolarity pin of the pulse storage capacitor of same layer is contacted by wire and fixed in each column, each column adjacent two layers
In the homopolarity pins of corresponding two pulse storage capacitors pass through wire series winding and fix.
In an alternative embodiment, the encapsulating housing is the shell structure of upper surface open, passes through filling described in step 3
The pulse energy capacitance set is encapsulated in encapsulating housing by sealing liquid, including：
One layer of 1-2mm embedding layer is set in encapsulating housing bottom with embedding glue, the pulse energy capacitance set is put
Put on the embedding layer in the encapsulating housing, make the pulse energy capacitance set and the encapsulating housing inner surface away from
From 1.5mm is not less than, obtain treating embedding structure；
Treat that embedding structure preheats to described, the embedding glue, solidification are then irrigated, so that the pulse energy storage is electric
Appearance group is encapsulated in the encapsulating housing.
In an alternative embodiment, the preheating described in step 3, including：
Treat that embedding structure is incubated 4-5h at 60-70 DEG C by described, 6-7h is then incubated at 80-90 DEG C, is cooled afterwards
To 70-80 DEG C of insulation 7.5-8.5h.
7th, pulse storage capacitor method for packing according to claim 5, it is characterised in that the perfusion described in step 3
The embedding glue, solidification, including：
By described after embedding structure keeps 1~1.5h under the conditions of 100~130Pa, 70~75 DEG C, to the encapsulating shell
The embedding glue is poured into body, until glue liquid level flushes with the encapsulating housing open end, insulation, pressurize are at least
10min；Normal pressure is then returned to, is warming up to 100~105 DEG C, keeps 5~6h, is warming up to 120~125 DEG C, keeps 28~32h
Solidified.
In an alternative embodiment, the preparation method of the embedding glue includes：
In the case where air pressure is 190~240Pa, it is in mass ratio by the formulated resin A after preheating and the formulated resin B after preheating
2-3:1 ratio mixing；
Then recover to normal pressure, be 0.5-1.5 according to super-fine silicon micro-powder, formulated resin A and formulated resin B mass ratioes:2-
3:1 ratio, which adds, dries super-fine silicon micro-powder, is evacuated to 190~240Pa again, carries out 2~3h of Vacuum Mixture and degassing, obtains
To embedding glue；
Wherein, formulated resin A is 1 according to mass ratio by 128 epoxy resin and bisphenol A epoxide resin：1.5-2 ratio mix
Conjunction, degassing are made, and formulated resin B is 12- according to mass ratio by phthalic anhydride, poly- nonanoic anhydride and liquid XNBR
17：8-10：1 ratio mixing, deaerating is made.
In an alternative embodiment, the pre-heating mean of the formulated resin A and formulated resin B, including：
Formulated resin A is incubated 1~1.5h at 70~75 DEG C, formulated resin B is incubated at 50~55 DEG C to 1~
1.5h。
10th, pulse storage capacitor method for packing according to claim 4, it is characterised in that the wire is diameter
For 0.5-0.9mm silver-coated copper wire.
The pulse storage capacitor encapsulating structure that above-mentioned method for packing makes.
The present invention has the following advantages that compared with prior art：
(1) pulse storage capacitor method for packing provided in an embodiment of the present invention, by the way that individual pulse storage capacitor is carried out
Pile up, multiple pulse storage capacitors after piling up are packaged, and are carried out by the positive and negative electrode lead and miscellaneous part of leakage
Connection, encapsulating housing is fixed by fixture, has both been realized the three-dimensional space arrangement of pulse storage capacitor, has been improved
Space availability ratio, in turn simplify the fixed installation mode of electric capacity, pulse storage capacitor is not almost stressed, substantially increase and put
The security reliability of big device work；
(2) when pulse energy capacitance set and the distance of the inner surface of encapsulating housing are 1.5mm, embedding structure is being ensured
While volume minimization, it is ensured that each electric capacity energy long-time stable is fixed in encapsulating housing, is adapted to spatial complex environment and is used
It is required that；
(3) treat embedding structure according to preheating temperature gradient provided by the invention to be preheated, can effectively protect tantalum electric capacity
Expansion rate of change between device group and each structure, ensure that tantalum capacitor group performance in potting process does not change, preheat
After the completion of wait embedding；
(4) after irrigating glue, by keeping under vacuum at least 10 minutes, casting glue liquid can be made fully to infiltrate,
It using solidification temperature curve provided by the invention, can effectively alleviate caused internal stress in the curing process, ensure device not
Because internal stress produces damage；
(5) casting glue that the embodiment of the present invention uses, good mechanical performance, good heat dissipation will not cause heat accumulation, while close
Spend small so that product quality requires high and also meets space requirement lightweight simultaneously；
(6) the full tantalum package structure of capacitor that the present embodiment provides is meeting the high premise of the miniaturization of aerospace product, reliability
Under, it can be ensured that the complete upper hectowatt power output power supply ability of tantalum electric capacity processing.
Brief description of the drawings
Fig. 1 is existing pulse storage capacitor mounting structure schematic diagram；
Fig. 2 is pulse storage capacitor method for packing flow chart provided in an embodiment of the present invention；
Fig. 3 is that only full tantalum electric capacity trims the structural representation after pin to list provided in an embodiment of the present invention；
Fig. 4 is a kind of pulse energy capacitance set texture edge schematic diagram provided in an embodiment of the present invention；
Fig. 5 is another pulse energy capacitance set texture edge schematic diagram provided in an embodiment of the present invention；
Fig. 6 is a kind of pulse storage capacitor encapsulating structure schematic diagram provided in an embodiment of the present invention；
Fig. 7 a are a kind of embedding housing side sectional view provided in an embodiment of the present invention；
Fig. 7 b are a kind of embedding shell top view provided in an embodiment of the present invention.
Embodiment
Just the present invention is described further with reference to accompanying drawing below.
Referring to Fig. 2, the embodiments of the invention provide a kind of pulse storage capacitor method for packing, comprise the following steps：
Step 1, multiple pulse storage capacitors are piled up together and fixed by conductor in parallel, form pulse storage capacitor
Group；
Specifically, the preferred positive terminal pin of pulse storage capacitor and negative pole end pin are located at electricity respectively in the embodiment of the present invention
Hold the cylindric full tantalum electric capacity (as shown in Figure 3) at body both ends, the full tantalum of the non-solid electrolyte of especially CAK38-125V-82uF-K
Capacitor；
The stacking mode of pulse storage capacitor both can be that the dislocation of adjacent two layers pulse storage capacitor is piled up (such as Fig. 4 institutes
Show) or each layer pulse storage capacitor correspond pile up (as shown in Figure 5), specific stacking mode can be according to use
It needs to be determined that the present invention does not limit；
Specifically, can be by same wire by the positive pole of each pulse storage capacitor when piling up into a row multilayer
Hold pin series winding to fix, the negative pole end pin series winding fixation of each pulse storage capacitor is realized by each pulse by another wire
The parallel connection of storage capacitor is fixed；When piling up into multilayer multiple row, as shown in figure 5, it is preferred that in each column same layer the pulse storage
The homopolarity pin of energy electric capacity is contacted by a wire to be fixed, two corresponding pulse storage capacitors in each column adjacent two layers
Homopolarity pin by a wire contact fix, with ensure the stability of capacitance connection and make electric current distribution evenly；It is adjacent
The adjacent pin of the two row pulse storage capacitors shares a wire.Preferably pass through the side of welding in the embodiment of the present invention
Formula, pin and wire are fixed, for ease of welding and further saving installing space, in the embodiment of the present invention, by multiple pulses
Storage capacitor is located at the same side according to positive terminal pin, and the mode that negative pole end pin is located at opposite side is piled up together, in pin
Between being fixed with wire, the pin of the pulse storage capacitor is trimmed, it is 2-4mm to make the pin length after trimming；
Step 2, to the capacitance group at least one positive terminal lead and an at least negative pole end lead are set；
Specifically, in the embodiment of the present invention, the wire of positive terminal lead and positive terminal connects, negative pole end lead and negative pole end
Wire connection, the quantity of lead can according to using it needs to be determined that；
Step 3, by embedding glue the pulse energy capacitance set is encapsulated in encapsulating housing, draws the positive terminal
Line and the leakage of negative pole end lead are outside the encapsulating housing.
Specifically, in the embodiment of the present invention, encapsulating housing is provided with screwed hole, for using connectors such as screw, bolts
Fixed encapsulating housing；In other embodiments, tenon structure, interface arrangment etc. are also provided with encapsulating housing, by mortise and tenon,
The modes such as clamping are connected with miscellaneous part, and the present invention does not limit；
Pulse storage capacitor method for packing provided in an embodiment of the present invention, by the way that individual pulse storage capacitor is carried out into code
Put, multiple pulse storage capacitors after piling up are packaged, and are connected by the positive and negative electrode lead of leakage with miscellaneous part
Connect, encapsulating housing is fixed by fixture, both realized the three-dimensional space arrangement of pulse storage capacitor, improved
Space availability ratio, the fixed installation mode of electric capacity is in turn simplify, pulse storage capacitor is not almost stressed, substantially increases amplification
The security reliability of device work.
As shown in fig. 6, the encapsulating housing is the shell structure of upper surface open, pass through embedding glue described in step 3
The pulse energy capacitance set is encapsulated in encapsulating housing, including：
One layer of 1-2mm embedding layer is set in encapsulating housing bottom with embedding glue, the pulse energy capacitance set is put
Put on the embedding layer in the encapsulating housing, between the inner surface for making the pulse energy capacitance set and the encapsulating housing
Gap is not less than 1.5mm, obtains treating embedding structure；When the inner surface of the pulse energy capacitance set and the encapsulating housing
When gap is 1.5mm, while ensureing that embedding structural volume minimizes, it is ensured that each electric capacity energy long-time stable is fixed on encapsulation
In housing, spatial complex environment requirement is adapted to；
Treat that embedding structure preheats to described, the embedding glue, solidification are then irrigated, so that the pulse energy storage is electric
Appearance group is encapsulated in the encapsulating housing.
Specifically, in the embodiment of the present invention, to described when embedding structure preheats, the component to be packaged is existed
4-5h is incubated at 60-70 DEG C, 6-7h is then incubated at 80-90 DEG C, is cooled to 70-80 DEG C of insulation 7.5-8.5h afterwards；According to
The pre- heat energy of this thermograde progress effectively protects the expansion rate of change between tantalum capacitor group and each structure, ensures tantalum capacitor
Group performance in potting process does not change.
The perfusion embedding glue, solidification described in step 3, including：
By described after embedding structure keeps 1~1.5h under the conditions of 100~130Pa, 70~75 DEG C, to the encapsulating shell
The embedding glue is poured into body, until glue liquid level flushes with the encapsulating housing open end, insulation, pressurize are at least
10min；Normal pressure is then returned to, is warming up to 100~105 DEG C, keeps 5~6h, is warming up to 120~125 DEG C, keeps 28~32h
Solidified.
By keeping under vacuum at least 10 minutes, casting glue liquid can be made fully to infiltrate, use temperature cured above
Write music line, can effectively alleviate caused internal stress in the curing process, ensure device not because internal stress produces damage.
Specifically, embedding glue is prepared by the following method described in the embodiment of the present invention：
In the case where air pressure is 190~240Pa, it is in mass ratio by the formulated resin A after preheating and the formulated resin B after preheating
2-3:1 ratio mixing；
Then recover to normal pressure, be 0.5-1.5 according to super-fine silicon micro-powder, formulated resin A and formulated resin B mass ratioes:2-
3:1 ratio, which adds, dries super-fine silicon micro-powder, is evacuated to 190~240Pa again, carries out 2~3h of Vacuum Mixture and degassing, obtains
To embedding glue；
Wherein, formulated resin A is 1 according to mass ratio by 128 epoxy resin and bisphenol A epoxide resin：1.5-2 ratio mix
Close, degassing is made；Formulated resin B is 12- according to mass ratio by phthalic anhydride, poly- nonanoic anhydride and liquid XNBR
17：8-10：1 ratio mixing, deaerating is made；The preferred 800-1000 mesh super-fine silicon micro-powder of super-fine silicon micro-powder.
Embedding glue prepared by the above method, good mechanical performance, good heat dissipation will not cause heat accumulation, while density is small,
So that product quality requires high also meets space requirement lightweight simultaneously.
In the embodiment of the present invention, during preheating, formulated resin A is incubated 1~1.5h at 70~75 DEG C, by formulated resin B
1~1.5h is incubated at 50~55 DEG C, mixes two kinds of dispensings more uniform, Embedding Material performance is more preferably.
In the embodiment of the present invention, the wire is a diameter of 0.5-0.9mm silver-coated copper wire, and silver layer can continuously securely
Copper line surface is attached to, there is very high corrosion resistance and good electric conductivity.
It is below the specific embodiment of the present invention：
Tantalum electric capacity is CAK38-125V-82uF-K axial directions non solid electrolyte all tantalum capacitor in the present embodiment.
Step 1：16 tantalum electric capacity 1 are taken, the positive terminal pin of each tantalum electric capacity and negative pole end pin are trimmed, make to repair
Pin length after cutting is 3mm, the solder joint that can not be destroyed on positive terminal pin during trimming；
Step 2：As it can be seen in figures 5 and 6, being located at the principle of the same side according to homopolarity, 16 tantalum electric capacity after trimming are piled up
Into two layers liang of array structure, every layer of 8 tantalum electric capacity in the structure, 8 tantalum electric capacity of each column；Left side will be located in two layers liang of array structure
Homopolarity pin is welded on a diameter of 0.7mm silver-coated copper wire according to mode shown in Fig. 5, and silver-coated copper wire forms " mesh " word after welding
Type structure, equally, the homopolarity pin positioned at right side is welded on a diameter of 0.7mm silver-coated copper wire according to mode shown in Fig. 4,
Silver-coated copper wire forms " mesh " font structure after welding；Equally, by 16 pins (8 positive terminal pins, 8 negative poles of centre
End pin) it is welded on a diameter of 0.7mm silver-coated copper wire 3, obtain tantalum capacitance group；
As shown in figure 5, two positive terminal leads and two negative pole end leads are set to the tantalum capacitance group；
Step 3：Prepare embedding glue：
The super-fine silicon micro-powder of 800 mesh is added in drying chamber, is 120Pa in air pressure, under the conditions of temperature is 110 DEG C, vacuum
Remove moisture 26 hours；
Formulated resin A is preheated to holding 1 hour at 70 DEG C, makes the reduction of its viscosity；
Formulated resin B is kept for 1 hour at 50 DEG C；
The vacuum of regulation mixing tank remains 190Pa, is 2.5 according to formulated resin A and formulated resin B mass ratio:1
Proportioning, first formulated resin B is poured into mixing tank, then pour into formulated resin A, mixed 1 hour；
After batch mixing is uniform, mixing tank is returned into normal pressure, opens the charge door of mixing tank, according to super-fine silicon micro-powder, formula
Resin A and formulated resin B mass ratioes are 0.1:2.5:1 amount adds super-fine silicon micro-powder, is again evacuated to mixing tank
190Pa, carry out Vacuum Mixture and deaerate 2 hours, obtain embedding glue；Wherein, formulated resin A is by E-51 and NPEL-128E two
Kind epoxy resin is 1 according to mass ratio：1.8 ratio mixing, deaerating is made, and formulated resin B is by phthalic anhydride, poly- n-nonanoic acid
Acid anhydride and liquid XNBR are 60 according to mass ratio：36：4 ratio mixing, deaerating is made；
By obtained embedding glue on the manipulator of priming by vacuum equipment；
Step 4：Embedding, solidification：
The embedding glue prepared with step 3,1.5mm embedding layer is first formed in embedding housing 2, as shown in figure 5, embedding
Housing 2 is the Al-alloy casing of upper end open, and external dimensions (length, width and height) is 84*35*32.5mm, and cavity volume grows a width of 82*28mm,
To meet that tantalum electric capacity puts length and width, the wall thickness of embedding housing 2 is 1mm, and side wall is provided with the fixed thread of three pairs of M3 × 6
Hole 21 (as shown in Fig. 7 a and b), for fixing embedding housing by fixture；
Step 2 is obtained on the embedding layer that tantalum capacitance group is put into embedding housing 2, the position of tantalum capacitance group is adjusted, makes it
More than 1.5mm gaps are respectively provided with each madial wall of embedding housing 2, obtain treating embedding structure；
It will treat that embedding structure is put into incubator, and be warming up to 65 DEG C of 4.5 hours of holding, and then proceed to be warming up to 85 DEG C of holdings 6
Individual hour, then cool to 75 DEG C of 8 hours of holding；According to this thermograde carry out pre- heat energy effectively protect tantalum capacitor group with it is each
Expansion rate of change between structure, ensure that tantalum capacitor group performance in potting process does not change, after the completion of preheating etc.
Treat embedding；
It will treat that embedding structure is placed on priming by vacuum equipment bottom supporting plate, the position to waiting for perfusion position and manipulator,
After keeping 1h under the conditions of 100Pa, 70 DEG C, the embedding glue is poured into encapsulating housing, until glue liquid level and the envelope
Fill shell nozzle end face, insulation, pressurize 10min；Normal pressure is then returned to, is warming up to 100 DEG C, 5h is kept, is warming up to 125
DEG C, keep 32h to be solidified, obtain full tantalum package structure of capacitor as shown in Figure 6.
The full tantalum package structure of capacitor that the present embodiment provides is meeting the miniaturization of aerospace product, on the premise of reliability height,
It is able to ensure that the complete upper hectowatt power output power supply ability of tantalum electric capacity processing；Structure storage capacitor simple to install, the space availability ratio
Height, while the whole tantalum capacitor inside embedding does not almost stress, and substantially increases the reliability of amplifier operation.
Unspecified part of the present invention belongs to general knowledge as well known to those skilled in the art.Described specific embodiment is only pair
Spirit explanation for example of the invention.The personnel of the technical field of the invention can do different repair to described specific embodiment
Change or supplement or replaced using similar mode, but spirit without departing from the present invention or surmount appended claims and defined
Scope.
Claims (11)
1. a kind of pulse storage capacitor method for packing, it is characterised in that comprise the following steps：
Step 1, multiple pulse storage capacitors are piled up together and fixed by conductor in parallel, form pulse energy capacitance set；
Step 2, to the capacitance group at least one positive terminal lead and an at least negative pole end lead are set；
Step 3, by embedding glue the pulse energy capacitance set is encapsulated in encapsulating housing, make the positive terminal lead and
Negative pole end lead is leaked outside the encapsulating housing.
2. pulse storage capacitor method for packing according to claim 1, it is characterised in that described in step 1 by multiple arteries and veins
Storage capacitor is rushed to pile up together, including：Multiple pulse storage capacitors are located at the same side according to positive terminal pin, negative pole end draws
The mode that pin is located at opposite side is piled up together.
3. pulse storage capacitor method for packing according to claim 2, it is characterised in that described in step 1 will be multiple
Before pulse storage capacitor is piled up together, in addition to：
The pin of the pulse storage capacitor is trimmed, it is 2-4mm to make the pin length after trimming.
4. the pulse storage capacitor method for packing according to Claims 2 or 3, it is characterised in that described in step 1 will be multiple
After pulse storage capacitor is piled up together, at least two layers, two array structures are formed, it is described to be fixed by conductor in parallel, including：
The homopolarity pin of the pulse storage capacitor of same layer is contacted by wire and fixed in each column, phase in each column adjacent two layers
The homopolarity pin of corresponding two pulse storage capacitors is contacted by wire and fixed.
5. pulse storage capacitor method for packing according to claim 1, it is characterised in that the encapsulating housing is upper surface
The shell structure of opening, the pulse energy capacitance set is encapsulated in encapsulating housing by embedding glue described in step 3, wrap
Include：
One layer of 1-2mm embedding layer is set in encapsulating housing bottom with embedding glue, the pulse energy capacitance set is placed on
On embedding layer in the encapsulating housing, make the pulse energy capacitance set and the gap of the inner surface of the encapsulating housing equal
Not less than 1.5mm, obtain treating embedding structure；
Treat that embedding structure preheats to described, the embedding glue, solidification are then irrigated, so that the pulse energy capacitance set
It is encapsulated in the encapsulating housing.
6. pulse storage capacitor method for packing according to claim 5, it is characterised in that the preheating described in step 3, bag
Include：
Treat that embedding structure is incubated 4-5h at 60-70 DEG C by described, 6-7h is then incubated at 80-90 DEG C, is cooled to 70- afterwards
80 DEG C of insulation 7.5-8.5h.
7. pulse storage capacitor method for packing according to claim 5, it is characterised in that described in the perfusion described in step 3
Embedding glue, solidification, including：
By described after embedding structure keeps 1~1.5h under the conditions of 100~130Pa, 70~75 DEG C, into the encapsulating housing
The embedding glue is poured into, until glue liquid level flushes with the encapsulating housing open end, insulation, pressurize at least 10min；So
After return to normal pressure, be warming up to 100~105 DEG C, keep 5~6h, be warming up to 120~125 DEG C, keep 28~32h to be solidified.
8. pulse storage capacitor method for packing according to claim 7, it is characterised in that the preparation side of the embedding glue
Method includes：
It is 2-3 in mass ratio by the formulated resin A after preheating and the formulated resin B after preheating in the case where air pressure is 190~240Pa:
1 ratio mixing；
Then recover to normal pressure, be 0.5-1.5 according to super-fine silicon micro-powder, formulated resin A and formulated resin B mass ratioes:2-3:1
Ratio, which adds, dries super-fine silicon micro-powder, is evacuated to 190~240Pa again, carries out 2~3h of Vacuum Mixture and degassing, is filled
Sealing liquid；
Wherein, formulated resin A is 1 according to mass ratio by 128 epoxy resin and bisphenol A epoxide resin：1.5-2 ratio mixing,
Degassing is made, and formulated resin B is 12-17 according to mass ratio by phthalic anhydride, poly- nonanoic anhydride and liquid XNBR：
8-10：1 ratio mixing, deaerating is made.
9. pulse storage capacitor method for packing according to claim 8, it is characterised in that the formulated resin A and formula
The pre-heating mean of resin B, including：
Formulated resin A is incubated 1~1.5h at 70~75 DEG C, formulated resin B is incubated 1~1.5h at 50~55 DEG C.
10. pulse storage capacitor method for packing according to claim 4, it is characterised in that the wire is a diameter of
0.5-0.9mm silver-coated copper wire.
11. the pulse storage capacitor encapsulating structure that the method for packing provided by any one of claim 1-10 makes.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584253A (en) * | 2020-05-08 | 2020-08-25 | 肇庆绿宝石电子科技股份有限公司 | Super capacitor and glue filling method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1726567A (en) * | 2002-12-17 | 2006-01-25 | Abb技术有限公司 | Power capacitor |
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| CN1726567A (en) * | 2002-12-17 | 2006-01-25 | Abb技术有限公司 | Power capacitor |
| JP2012199590A (en) * | 2005-05-17 | 2012-10-18 | Vishay Sprague Inc | Surface mount capacitor and manufacturing method of the same |
| CN201327777Y (en) * | 2008-11-11 | 2009-10-14 | 佛山市顺德区创格电子实业有限公司 | Capacitor with high heat radiation power |
| CN101997343A (en) * | 2009-08-12 | 2011-03-30 | 铜陵亿亨达电子有限责任公司 | Novel pulse power accumulator with high specific volume and large current |
| CN103560015A (en) * | 2013-10-28 | 2014-02-05 | 贵州中航聚电科技有限公司 | High-voltage large-capacity mixed tantalum capacitor bank integrated module |
| CN104157581A (en) * | 2014-07-23 | 2014-11-19 | 西安空间无线电技术研究所 | Power diode secondary packaging method |
| CN104992836A (en) * | 2015-07-08 | 2015-10-21 | 深圳市汇北川电子技术有限公司 | Series connection type alternating-current filter capacitor for new energy automobile |
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| CN111584253A (en) * | 2020-05-08 | 2020-08-25 | 肇庆绿宝石电子科技股份有限公司 | Super capacitor and glue filling method and application thereof |
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| CN107731573B (en) | 2020-08-14 |
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