CN107723791B - A kind of cooling water plate for metal-organic chemical vapor deposition equipment - Google Patents
A kind of cooling water plate for metal-organic chemical vapor deposition equipment Download PDFInfo
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- CN107723791B CN107723791B CN201710883638.8A CN201710883638A CN107723791B CN 107723791 B CN107723791 B CN 107723791B CN 201710883638 A CN201710883638 A CN 201710883638A CN 107723791 B CN107723791 B CN 107723791B
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- 239000000498 cooling water Substances 0.000 title claims abstract description 71
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 29
- 238000001816 cooling Methods 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims description 9
- 239000000112 cooling gas Substances 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to metal-organic chemical vapor deposition equipment technical fields, disclose a kind of cooling water plate for metal-organic chemical vapor deposition equipment, water-cooled plate including forming cooling water plate frame, the upper surface of the water-cooled plate includes thermally conductive layer support portion and the support frame support portion that thermally conductive layer support portion periphery is arranged in, and the thermally conductive layer support portion is arranged with the support frame support portion stepped and the height of the thermally conductive layer support portion is greater than the height of the support frame support portion；Spherical support column is provided on the thermally conductive layer support portion.Cooling water plate of the present invention for metal-organic chemical vapor deposition equipment can improve to greatest extent the cooling efficiency to chip temperature, be correspondingly improved the production capacity of metal-organic chemical vapor deposition equipment under the premise of meeting chip cooling uniformity.
Description
Technical field
The present invention relates to metal-organic chemical vapor deposition equipment technical field, more particularly to one kind are organic for metal
The cooling water plate of object chemical vapor depsotition equipment.
Background technique
In Thinfilm solar cell assembly, film layer plays the role of photoelectric conversion, and performance is largely determined
The photoelectric conversion efficiency of cell piece, the i.e. critical performance parameters of cell piece are determined.Film layer generally uses metal organic-matter chemical
(English name of metal-organic chemical vapor deposition equipment is Metal-organic Chemical Vapor for vapor deposition
Deposition is abbreviated as MOCVD) processing method carry out Material growth, and MOCVD production equipment is very expensive, whole
In thin film solar cell sheet production line, MOCVD device cost occupies very high ratio, and the raising of production capacity can greatly
Reduce the manufacturing cost of cell piece.
Metal-organic chemical vapor deposition equipment is a kind ofization to grow up on the basis of vapor phase epitaxial growth (VPE)
Gas-phase deposition is learned, for growing epitaxial wafer.It is with III group, the organic compound of II race element and V, VI race's element
The reaction gas as chip growth such as hydride, carried out in Sapphire Substrate or other substrates in a manner of pyrolysis
Epitaxial deposition process grows the extension material of various iii-vs, VI compound semiconductor of II- and their multivariate solid solution
The bed of material.The growth conditions of usual MOCVD is carried out at low pressure (1000-10000pa), and carrier gas (the usually N2 used is grown
Or H2) be mixed in a certain ratio and be passed through in reaction chamber with unstrpped gas, underlayer temperature is generally between 700-1500K.
Cooling water plate device is the key components in MOCVD device, and cooling water plate device is located in MOCVD device
In LOAD-LOCK module, major function is cooled down to the chip after completion technique in the process chamber, and band temperature is cooling
To after being suitble to temperature, equipment is spread out of.The quality of cooling effect directly determines the homogeneity question of chip cooling after technique, to crystalline substance
The function of piece has direct influence.It is well known that temperature field is the deciding factor for determining deposition film quality, therefore, property
The outstanding cooling water plate device of energy is the good important component of MOCVD overall performance.
The type of cooling that cooling water plate device uses in MOCVD device at present is radiation cooling, uses the cooling of this structure
Water plate is as shown in Figure 1.1 device of cooling water plate is located at 2 lower section of wafer carrier, and wafer carrier 2 mainly has support frame 22, thermally conductive layer 21
And well contact and formed in the chip 3 of array distribution, 2 upper surface top view of wafer carrier with thermally conductive layer, as shown in Fig. 2,
Fixation is had no between thermally conductive layer 21 and support frame 22 simultaneously, thermally conductive layer 21 is only to be bonded to be located on support frame 22.Cooling water
There is the gap 4 of certain distance between plate 1 and wafer carrier support frame 22, there is also certain between support frame bottom surface and thermally conductive layer
Distance, therefore, the actual range between thermally conductive layer and cooling water plate are larger.Under this distance condition, cooling water plate passes through radiation
The mode of heat transfer gradually decreases the thermally conductive layer temperature in wafer carrier, cools down the temperature of chip to realize.Together
When, in order to improve cooling uniformity, in cooling procedure, increase N among support plate and cooling water plate2, to make thermally conductive layer
Temperature can be in N2Effect is lower uniformly cooling, to promote the temperature cooling uniformity of chip, promotes wafer property.
Such cooling structure realizes carry out cooling purpose to chip to a certain extent, but passes through simulating, verifying and phase
Test discovery is closed, due to radiant heat transfer feature, the spacing of thermally conductive layer and cooling water plate is larger, so that conduct radiation efficiency
It is lower, it cannot achieve the high efficiency cooling to support plate upper surface chip, constrain the volume production of equipment.
Summary of the invention
(1) technical problems to be solved
The present invention provides a kind of cooling water plate for metal-organic chemical vapor deposition equipment, to solve existing metal
Organic chemical vapor deposition equipment is low to the cooling efficiency of chip thus the problem of restricting equipment yield.
(2) technical solution
In order to solve the above-mentioned technical problems, the present invention provides a kind of for metal-organic chemical vapor deposition equipment
Cooling water plate, the water-cooled plate including forming cooling water plate frame, the upper surface of the water-cooled plate includes thermally conductive layer support portion and sets
The support frame support portion on thermally conductive layer support portion periphery is set, the thermally conductive layer support portion and the support frame support portion are at platform
The height of scalariform setting and the thermally conductive layer support portion is greater than the height of the support frame support portion；
Spherical support column, the thermally conductive layer where the thermally conductive layer support portion and chip are provided on the thermally conductive layer support portion
Profile is similar and the overall size of thermally conductive layer support portion is less than the marginal dimension of the thermally conductive layer；
The difference in height on the vertex of the support frame support portion and the spherical support column is greater than support frame and supports the thermal conductivity
The distance between surface and support frame bottom surface of layer.
Further, multiple spherical support columns are correspondingly arranged at the crystalline substance of the thermally conductive layer of the thermally conductive layer support portion support
The underface of piece support frame.
Further, multiple spherical support columns are uniformly distributed.
Further, multiple stomatas of the upper and lower surfaces through the water-cooled plate, the stomata are provided on cooling water plate
With cooling gas pipeline connection.
Further, the regulating module of control air-flow is provided on the cooling gas pipeline.
Further, multiple stomatas are correspondingly arranged at the wafer support of the thermally conductive layer of the thermally conductive layer support portion support
The underface of skeleton.
Further, more cooling water channels are evenly arranged in cold water water plate.
Further, the difference in height of the support frame support portion and the thermally conductive layer support portion supports institute not less than support frame
State the distance between surface and the support frame bottom surface of thermally conductive layer.
Further, the height of the spherical support column is 5-10mm.
Further, the material of the spherical support column is stainless steel or quartz.
(3) beneficial effect
Above-mentioned technical proposal of the invention has the advantages that the present invention for metal-organic chemical vapor deposition equipment
Cooling water plate according to wafer carrier own structural characteristics, the upper surface of water-cooled plate is designed as step structure and in corresponding heat
The part of conducting shell is provided with spherical support column, in this way, gradually falling and the contact process last with cooling water plate in wafer carrier
In, the thermally conductive layer of wafer carrier is in contact with the spherical support column of cooling water plate at first, and then support frame continues to fall, thermally conductive layer
And then be detached from support frame, support frame is eventually fallen on cooling water plate, and the two face face paste is closed in place.At this point, thermally conductive layer is fallen in point
It is distributed on the spherical support column on the top of cooling water plate, in the state of short distance, is radiated between thermally conductive layer and cooling water plate
Heat conduction, thermally conductive layer temperature rapid decrease, meanwhile, the support frame under the face paste conjunction state of face is direct by way of heat transfer
Cooled water plate is cooled down, and temperature is also quickly cooled down, while the temperature of support frame will not influence the temperature of thermally conductive layer, most
The big guarantee temperature consistency of chip.
As it can be seen that cooling water plate of the present invention for metal-organic chemical vapor deposition equipment can meet chip cooling
Under the premise of even property, the cooling efficiency to chip temperature is improved to greatest extent, has been correspondingly improved metal organic-matter chemical gas
The production capacity of phase depositing device.
In addition to it is described above present invention solves the technical problem that, constitute technical solution technical characteristic and have this
Except advantage brought by the technical characteristic of a little technical solutions, other technical characteristics of the invention and these technical characteristic brings
Advantage will be further illustrated in conjunction with attached drawing.
Detailed description of the invention
Fig. 1 is the scheme of installation of existing cooling water plate and wafer carrier；
Fig. 2 is the top view of Fig. 1；
Fig. 3 is the embodiment of the present invention for the cooling water plate of metal-organic chemical vapor deposition equipment and the installation of wafer carrier
Schematic diagram；
Fig. 4 is the portion the A enlarged drawing of Fig. 3；
Fig. 5 is top view of the embodiment of the present invention for the cooling water plate of metal-organic chemical vapor deposition equipment.
In figure: 1: cooling water plate, 11: water-cooled plate, 12: cooling water channel, 13: gas piping, 14: stomata, 15: gas, 16:
Spherical support column；2: wafer carrier, 21: thermally conductive layer, 22: support frame；3: chip；4: cooling water plate and wafer carrier support frame it
Between gap.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
In addition, in the description of the present invention, unless otherwise indicated, " multiple ", " more ", " multiple groups " be meant that two or
Two or more, " several ", " several ", " several groups " are meant that one or more.
What figure label 4 indicated is the sky between the cooling water plate and wafer carrier support frame of original cooling water plate structure
Gap.
As shown in figure 3, the cooling water plate provided in an embodiment of the present invention for metal-organic chemical vapor deposition equipment
1, the water-cooled plate 11 including forming cooling water plate outline border, cooling water plate is interior to be provided with more uniformly distributed cooling water channels 12, cold water pipe
It is the state of cooling that the effect in road 12, which is to maintain water-cooled plate 11,.The upper surface of the water-cooled plate 11 is arranged into a ladder, wherein ladder
Shape is designed according to the thermally conductive layer 21 of wafer carrier 2 and the structure of support frame 22.Specifically as shown in figure 3, water-cooled plate 11
Middle part be top bar, periphery is to be looped around getting out of a predicament or an embarrassing situation in top bar circumferential direction, and wherein the part of top bar is for supporting
Thermally conductive layer 21, the part got out of a predicament or an embarrassing situation is for supporting support frame 22, and it is thermal conductivity that description, which defines top bar position, for convenience
Layer support portion, definition get out of a predicament or an embarrassing situation position as support frame support portion.
If Fig. 3 is schematically shown, spherical support column 16, the thermally conductive layer branch are provided on the thermally conductive layer support portion
Support part is similar to the profile of thermally conductive layer 21 where chip and the overall size of thermally conductive layer support portion is less than the thermally conductive layer 21
Marginal dimension.The difference in height on the vertex of the support frame support portion and the spherical support column 16 is greater than support frame and supports the heat
The distance between surface and 22 bottom surface of support frame of conducting shell 21.
It is understood that the difference in height on the vertex of the support frame support portion and the spherical support column 16 is greater than support
Frame supports the distance between surface and 22 bottom surface of support frame of the thermally conductive layer 21, that is, thermally conductive layer 21 is supported on spherical support
When on column 16, (supporting surface of support frame 22 refers to that support frame 22 supports to the supporting surface of the bottom surface of thermally conductive layer 21 and support frame 22
The face contacted when the thermally conductive layer 21 with 21 bottom surface of thermally conductive layer) there are differences in height, in other words, thermally conductive layer 21 at this time with branch
Support frame 22 is separated from each other.In practical applications, the difference in height on the vertex of support frame support portion and the spherical support column 16
Slightly support the distance between surface and support frame bottom surface of the thermally conductive layer big than support frame；Preferably, such as the institute of Fig. 3 or 4
Show, the supporting surface and support frame bottom of the surface of the support frame support portion and the surface height difference of thermally conductive layer support portion with support frame
The difference in height in face is consistent or bigger.
It should be noted that the profile of thermally conductive layer 21 where the thermally conductive layer support portion and chip 3 is similar and thermally conductive layer
The overall size of support portion is less than the marginal dimension of the thermally conductive layer 21, the purpose of this spline structure design, on the one hand, the thermal conductivity
The profile of thermally conductive layer 21 at 3 place of layer support portion and chip is similar be in order to guarantee thermally conductive layer can as far as possible with water-cooled plate 11
Face, to improve the cooling efficiency and cooling uniformity of chip 3；On the other hand, the overall size of thermally conductive layer support portion is less than
The marginal dimension of the thermally conductive layer 21, the big part of 21 specific heat conducting shell support portion of thermally conductive layer are contacting with support frame 22 of reserving
Position, can be convenient in this way by entire wafer carrier holistically-lowering, at the same in decentralization process realize support frame and heat
The separation of conducting shell 21.It in practical applications, can be reasonable to design thermally conductive layer branch according to factors such as area, the shapes of thermally conductive layer 21
The overall size of support part, design can support thermally conductive layer 21 completely with support frame and thermally conductive layer being capable of maximum face water
Cold plate 11 is principle.
It should be noted that spherical support column 16 refer to the support column that top surface is spherical or be directly ball-type or
The height of hemispheric supporting element, the whole spherical support column can be 5-10mm；The material of the spherical support column is thermally conductive
The materials such as the stainless steel or quartz of low efficiency.
In practical applications, multiple spherical support columns 16 should be correspondingly arranged at the heat of the thermally conductive layer support portion support
The underface of wafer support skeleton on conducting shell.Wherein, the wafer support skeleton refers to the position of thermally conductive layer support chip
Set namely adjacent chip as shown in Figure 2 between black region.
Spherical support column 16 is correspondingly arranged at the underface of wafer support skeleton, avoids spherical support column 16 and makes to chip
At damage and cannot effectively to heat at being supported the problem of.
Structure design of the present embodiment for the cooling water plate of metal-organic chemical vapor deposition equipment, carries according to chip
Plate 2 own structural characteristics (support frame 22 and thermally conductive layer 21 be by thermally conductive layer 21 itself gravity be fitted on support frame 22 and
On-fixed connection), change the positional relationship of original wafer carrier 2 and cooling water plate 1；And combine the step structure of cooling water plate 1
And the structure of spherical support column 16, wafer carrier 2 and cooling water plate 1 gradually fall and in last contact process, chip
The thermally conductive layer 21 of support plate 2 is in contact with the spherical support column 16 of cooling water plate 1 at first, and then support frame 22 continues to fall, thermal conductivity
Layer 21 is detached from support frame 22 in turn, and support frame 22 is eventually fallen in water-cooled plate 11, and the two face face paste is closed in place.At this point, thermal conductivity
Layer 21 is fallen on the spherical support column 16 for being distributed in the top of cooling water plate, in the state of short distance, thermally conductive layer 21 and cooling
Progress radiations heat energy conduction between water plate 1,21 temperature rapid decrease of thermally conductive layer, meanwhile, the support frame 22 under the face paste conjunction state of face
Directly cooled water plate 1 is cooled down by way of heat transfer, and temperature is also quickly cooled down, while the temperature of support frame 22
It will not influence the temperature of thermally conductive layer, utmostly ensure that the temperature consistency of chip 3.
Stablizing for thermally conductive layer 21 is supported to meet, spherical support column 16 can be evenly distributed with and be distributed in water-cooled plate upper surface, such as Fig. 5
It is shown.Spherical support column 16 can guarantee that the distance between thermally conductive layer 21 and cooling water plate 1 are minimum, allow cooling water to greatest extent
The heat conduction efficiency of heat radiation between the two is greatly improved close to thermally conductive layer 21 in plate 1.At the same time, although thermally conductive layer 21
It has carried out directly contacting between cooling water plate 1, but since contact point is spherical surface, has been point contact, is under point contact state
Radiant heat transfer effectively prevents the two plane-plane contact to wafer temperature uniformity bring risk.
As shown in Figures 3 and 4, multiple gas of the upper and lower surfaces through the cooling water plate are provided on the cooling water plate 1
Hole 14, the stomata 14 are connected to cooling gas pipeline 13, and the speed regulation of control air-flow is provided on the cooling gas pipeline 13
Valve.
Preferably as shown in figure 5, multiple stomatas 14 are correspondingly arranged at the thermally conductive layer of the thermally conductive layer support portion support
On wafer support skeleton underface.
Gas 15 in stomata 14 is preferably nitrogen, and nitrogen is transported to stomata 14 by cooling air pipe 13, then passes through
Stomata 14 is transported to upper surface, namely final nitrogen in the upper table of thermally conductive layer 21 and water-cooled plate 11 from the lower surface of cooling water plate 1
Cooling layer is formd between face.
The present embodiment is used for the cooling water plate of metal-organic chemical vapor deposition equipment, N2Playing in cooling procedure
Even Wen Zuoyong, under the action of spherical support column 16, N2Still thermally conductive layer 21 can be entered by the stomata 14 of water-cooled plate 11
In gap between cooling water plate 1；The present embodiment increases for the cooling water plate of metal-organic chemical vapor deposition equipment simultaneously
Add relevant gas flow speed regulation device, is changed to original with constant speed intake method to N2Intake velocity carries out continuously adjustable side
Formula, such mode further ensure temperature uniformity.
In conclusion the present embodiment is used for the cooling water plate of metal-organic chemical vapor deposition equipment with following excellent
Point:
1, water-cooled plate is improved to the cooling efficiency of chip.
2, when carrying out wafer carrier cooling, the different ways of contact of thermally conductive layer and support frame and cooling water plate are optimized
The type of cooling of wafer carrier ensure that the cooling uniformity effect of thermally conductive layer key structure under the premise of promoting cooling efficiency
Fruit.
Finally, it should be noted that in specific implementation application the wheel of step structure can be changed according to the concrete shape of support plate
Profile shape is mutually matched with meeting with support plate, realizes the good control cooled down to thermally conductive layer.Simultaneously according to thermally conductive layer area
Size, the height and quantity of spherical support column can be accordingly adjusted, with guarantee to the support of thermally conductive layer and control thermally conductive layer with
Distance between cooling water plate requires to meet the cooling of chip.Further, comprehensive in terms of for the material of spherical support column
It closes and considers that mechanical processing difficulty, heatproof degree etc. require, select the lower material of some thermal conductivities, be not limited to stainless steel, quartz
Deng.Be bonded in course motion with cooling water plate for wafer carrier, servo motor may be selected, realizes to its movement position
Accurate control.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
Invention is explained in detail, those skilled in the art should understand that: it still can be to aforementioned each implementation
Technical solution documented by example is modified or equivalent replacement of some of the technical features；And these modification or
Replacement, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (8)
1. a kind of cooling water plate for metal-organic chemical vapor deposition equipment, it is characterised in that: including forming cooling water
The water-cooled plate of plate framework, the upper surface of the water-cooled plate include thermally conductive layer support portion and are arranged on thermally conductive layer support portion periphery
Support frame support portion, the thermally conductive layer support portion and the support frame support portion stepped are arranged and the thermally conductive layer supports
The height in portion is greater than the height of the support frame support portion；
Spherical support column, the wheel of the thermally conductive layer where the thermally conductive layer support portion and chip are provided on the thermally conductive layer support portion
Wide similar and thermally conductive layer support portion overall size is less than the marginal dimension of the thermally conductive layer；
The difference in height on the vertex of the support frame support portion and the spherical support column is greater than support frame and supports the thermally conductive layer
The distance between surface and support frame bottom surface；
Multiple stomatas of the upper and lower surfaces through the water-cooled plate, the stomata and cooling air are provided on the cooling water plate
Body pipeline connection；
The regulating module of control air-flow is provided on the cooling gas pipeline.
2. the cooling water plate according to claim 1 for metal-organic chemical vapor deposition equipment, it is characterised in that:
Multiple spherical support columns be correspondingly arranged at the wafer support skeleton of the thermally conductive layer of thermally conductive layer support portion support just under
Side.
3. the cooling water plate according to claim 2 for metal-organic chemical vapor deposition equipment, it is characterised in that:
Multiple spherical support columns are uniformly distributed.
4. the cooling water plate according to claim 2 for metal-organic chemical vapor deposition equipment, it is characterised in that:
Multiple stomatas are correspondingly arranged at the underface of the wafer support skeleton of the thermally conductive layer of the thermally conductive layer support portion support.
5. the cooling water plate according to claim 1 for metal-organic chemical vapor deposition equipment, it is characterised in that:
More cooling water channels are evenly arranged in cooling water plate.
6. the cooling water plate according to claim 1 for metal-organic chemical vapor deposition equipment, it is characterised in that:
The difference in height of the support frame support portion and the thermally conductive layer support portion not less than support frame support the surface of the thermally conductive layer with
The distance between support frame bottom surface.
7. the cooling water plate according to claim 1-6 for metal-organic chemical vapor deposition equipment,
Be characterized in that: the height of the spherical support column is 5-10mm.
8. the cooling water plate according to claim 1-6 for metal-organic chemical vapor deposition equipment,
Be characterized in that: the material of the spherical support column is stainless steel or quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710883638.8A CN107723791B (en) | 2017-09-26 | 2017-09-26 | A kind of cooling water plate for metal-organic chemical vapor deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710883638.8A CN107723791B (en) | 2017-09-26 | 2017-09-26 | A kind of cooling water plate for metal-organic chemical vapor deposition equipment |
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| Publication Number | Publication Date |
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| CN107723791A CN107723791A (en) | 2018-02-23 |
| CN107723791B true CN107723791B (en) | 2019-11-22 |
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| KR101416442B1 (en) * | 2009-10-13 | 2014-08-13 | 한국전자통신연구원 | Apparatus for making temperature uniform and equipment for fabricating semiconductor devices using the same |
| CN103261477B (en) * | 2010-12-08 | 2015-09-30 | 欧瑞康先进科技股份公司 | For equipment and the method for basad upper settled layer |
| CN204391078U (en) * | 2014-12-29 | 2015-06-10 | 聚昌科技股份有限公司 | Wafer tray structure |
| CN106191818A (en) * | 2016-09-08 | 2016-12-07 | 北京精诚铂阳光电设备有限公司 | A kind of LPCVD coating process later stage substrate cooling system |
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2017
- 2017-09-26 CN CN201710883638.8A patent/CN107723791B/en active Active
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