CN107707200A - A kind of switched capacitor array of LC voltage controlled oscillators - Google Patents

A kind of switched capacitor array of LC voltage controlled oscillators Download PDF

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Publication number
CN107707200A
CN107707200A CN201710831633.0A CN201710831633A CN107707200A CN 107707200 A CN107707200 A CN 107707200A CN 201710831633 A CN201710831633 A CN 201710831633A CN 107707200 A CN107707200 A CN 107707200A
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CN
China
Prior art keywords
nmos tube
pmos
electric capacity
capacitor array
switched capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710831633.0A
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Chinese (zh)
Inventor
项骏
王慧
赵庆中
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Huada Empyrean Software Co Ltd
Beijing CEC Huada Electronic Design Co Ltd
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Beijing CEC Huada Electronic Design Co Ltd
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Priority to CN201710831633.0A priority Critical patent/CN107707200A/en
Publication of CN107707200A publication Critical patent/CN107707200A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

A kind of switched capacitor array of LC voltage controlled oscillators, including：NMOS tube, PMOS, switching capacity, and level adjustment circuit, wherein, the first to the 3rd NMOS tube, the grid of the first and second PMOSs are connected in control node；First and the 3rd the drain electrode of NMOS tube, the first PMOS be connected in first node, and be connected with first switch electric capacity, control the connecting and disconnecting of first switch electric capacity；Second NMOS tube, the drain electrode of the second PMOS and the source electrode of the 3rd NMOS tube are connected in section point, and are connected with second switch electric capacity, control the connecting and disconnecting of second switch electric capacity；The source electrode of first and second PMOSs is connected in the 3rd node, and is connected by level adjustment circuit with supply voltage；The source ground of first and second NMOS tubes.The switched capacitor array of the LC voltage controlled oscillators of the present invention, the service life of switching tube in switched capacitor array can be increased.

Description

A kind of switched capacitor array of LC voltage controlled oscillators
Technical field
The present invention relates to LC technology field of voltage-controlled oscillator, more particularly to a kind of switching capacity battle array of LC voltage controlled oscillators Row.
Background technology
Frequency synthesizer is widely used in the various fields such as communication, radar, electronic countermeasure, remote-control romote-sensing and instrument and meter, And oscillator is the important component of frequency synthesizer, it directly determines the output frequency of frequency synthesizer, output phase Number, and have a great impact to output noise.
Conventional pierce circuit is broadly divided into two kinds：Ring oscillator and LC voltage controlled oscillators.Wherein, ring oscillator Frequency range is big, design is simple, is easily integrated and models, and easily realizes that leggy exports, but due to its switch non-linearity effect, Easily influenceed by power supply Earth noise, quality factor are relatively low.And LC voltage controlled oscillators are compared with ring oscillator, frequency range is narrow, Design comparison is complicated, and modeling is difficult, but its noise is small, and quality factor are higher.
The reference clock of usual frequency synthesizer by piece outside the relatively low low noise quartz oscillator of frequency provide, institute Influenceed with the noise characteristic of frequency synthesizer by the noise characteristic of LC voltage controlled oscillators very big.Under these conditions, in order to design The frequency synthesizer of low noise, it is necessary to using the LC voltage controlled oscillators of high quality factor.
Fig. 1 is a kind of circuit theory diagrams of LC voltage controlled oscillators of the prior art.As shown in figure 1, LC voltage controlled oscillators By inductance L, electric capacity (Cv, C~2nC), resistance (M1、M2、M3) composition, wherein, frequency is adjusted by variable capacitance CvWith capacitor array C ~2nC is realized：Switched capacitor array C~2nC carries out coarse adjustment, C to the frequency of LC voltage controlled oscillatorsvTo the frequency of LC voltage controlled oscillators Rate carries out fine tuning.
Fig. 2 is a kind of circuit theory diagrams of switched capacitor array of the prior art.As shown in Fig. 2 the first NMOS tube MSW1, the second NMOS tube MSW2As switch, switching capacity C is realizedA、CBConnecting and disconnecting, MSW1、MSW2Drain electrode pass through the 3rd NMOS tube MSW3Connection, to prevent LC oscillator drifts, extend oscillator frequency range.When control node SEL is high electricity Usually, MSW1、MSW2、MSW3Conducting, node SA、SBFor low level；When control node SEL is low level, MSW1、MSW2、MSW3Cut Only, node SA、SBOccur that long arc vibrates, node SA、SBThere can be higher current potential, and work as node SA、SBCurrent potential it is too high When, MSW3Gate source voltage (VGS) and drain-to-gate voltage (VGD) can exceed supply voltage VDD, even more than 1.15 times of power supply electricity VDD is pressed, has a strong impact on MSW3Service life, or even M can be puncturedSW3, to MSW3Cause irreversible damage.Therefore, it is necessary to right Switched capacitor array of the prior art is improved, and increases by the 3rd NMOS tube MSW3Service life.
The content of the invention
In order to solve the shortcomings of the prior art, it is an object of the invention to provide a kind of switch of LC voltage controlled oscillators Capacitor array, the service life of switching tube in switched capacitor array (the 3rd NMOS tube) can be increased.
To achieve the above object, the switched capacitor array of LC voltage controlled oscillators provided by the invention, including：
First NMOS tube, the second NMOS tube, the 3rd NMOS tube, the first PMOS, the second PMOS, first switch electric capacity, Second switch electric capacity, and level adjustment circuit, wherein,
First NMOS tube, second NMOS tube, the 3rd NMOS tube, first PMOS, described second The grid of PMOS is connected in control node；
The drain electrode of first NMOS tube, the 3rd NMOS tube, first PMOS is connected in first node, and with The first switch electric capacity is connected, and controls the connecting and disconnecting of the first switch electric capacity；
Second NMOS tube, the drain electrode of second PMOS and the source electrode of the 3rd NMOS tube are connected in the second section Point, and be connected with the second switch electric capacity, control the connecting and disconnecting of the second switch electric capacity；
First PMOS, the source electrode of second PMOS are connected in the 3rd node, and pass through the level adjustment Circuit is connected with supply voltage；
The source ground of first NMOS tube, second NMOS tube.
Further, the level adjustment circuit, including：First resistor, second resistance and the first electric capacity, wherein,
The first resistor, the second resistance, one end of first electric capacity are connected with the 3rd node；
The other end of the first resistor is connected with the supply voltage；
The second resistance, the other end of first electric capacity are connected and are grounded.
The switched capacitor array of the LC voltage controlled oscillators of the present invention, the 3rd node V is adjusted by level adjustment circuit Tm's Level value, the 3rd NMOS tube M can be madeSW3Gate source voltage (VGS) and drain-to-gate voltage (VGD) be less than supply voltage VDD 1.15 Times, add the 3rd NMOS tube MSW3Service life, and the first PMOS MSW4, the second PMOS MSW5Need to only have smaller Size, it is possible to obtain larger resistance value, reduce the parasitic capacitance to switched capacitor array.
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification Obtain it is clear that or being understood by implementing the present invention.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, and a part for constitution instruction, and with the present invention's Embodiment together, for explaining the present invention, is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is a kind of circuit theory diagrams of LC voltage controlled oscillators of the prior art；
Fig. 2 is a kind of circuit theory diagrams of switched capacitor array of the prior art；
Fig. 3 is the circuit theory diagrams according to the switched capacitor array of the LC voltage controlled oscillators of the present invention；
Fig. 4 is the switched capacitor array and the 3rd of the switched capacitor array of the LC voltage controlled oscillators of the present invention in Fig. 2 The comparison of wave shape figure of the gate source voltage of NMOS tube.
Embodiment
The preferred embodiments of the present invention are illustrated below in conjunction with accompanying drawing, it will be appreciated that described herein preferred real Apply example to be merely to illustrate and explain the present invention, be not intended to limit the present invention.
Fig. 3 is according to the circuit theory diagrams of the switched capacitor array of the LC voltage controlled oscillators of the present invention, as shown in figure 3, originally The switched capacitor array of the LC voltage controlled oscillators of invention, including：
First NMOS tube MSW1, the second NMOS tube MSW2, the 3rd NMOS tube MSW3, the first PMOS MSW4, the second PMOS MSW5, first switch electric capacity CA, second switch electric capacity CB, and level adjustment circuit T, wherein,
First NMOS tube MSW1, the second NMOS tube MSW2, the 3rd NMOS tube MSW3, the first PMOS MSW4, the second PMOS MSW5 Grid be connected in control node SEL；
First NMOS tube MSW1, the 3rd NMOS tube MSW3, the first PMOS MSW4Drain electrode be connected in first node SA, and with First switch electric capacity CAIt is connected, control first switch electric capacity CAConnecting and disconnecting；
Second NMOS tube MSW2, the second PMOS MSW5Drain electrode and the 3rd NMOS tube MSW3Source electrode be connected in section point SB, and with second switch electric capacity CBIt is connected, control second switch electric capacity CBConnecting and disconnecting；
First PMOS MSW4, the second PMOS MSW5Source electrode be connected in the 3rd node Vm, and pass through level adjustment circuit T It is connected with supply voltage VDD；
First NMOS tube MSW1, the second NMOS tube MSW2Source ground；
Wherein, level adjustment circuit T is adjusting the 3rd node VmLevel value, make the 3rd node VmLevel value approach In 1/2 times of supply voltage VDD, so as to ensure the 3rd NMOS tube MSW3Gate source voltage (VGS) and drain-to-gate voltage (VGD) be less than 1.15 times of supply voltage VDD, so as to increase by the 3rd NMOS tube MSW3Service life.
Further, level adjustment circuit T, including：First resistor R1, second resistance R2 and the first electric capacity C1, wherein,
First resistor R1, second resistance R2, the first electric capacity C1 one end and the 3rd node VmIt is connected；
The first resistor R1 other end is connected with supply voltage VDD；Second resistance R2, the first electric capacity C1 other end are connected And it is grounded.
By the ratio for the resistance value for adjusting first resistor R1 and second resistance R2, the 3rd node V can be adjustedmLevel Value.
The course of work of the switched capacitor array of the LC voltage controlled oscillators of the present invention is as follows：
When control node SEL is high level, the first PMOS MSW4, the second PMOS MSW5Shut-off, the first NMOS tube MSW1, the second NMOS tube MSW2, the 3rd NMOS tube MSW3Turn on, now first node SAWith section point SBIt is low level, the 3rd NMOS tube MSW3Normal work.
When control node SEL is low level, the first NMOS tube MSW1, the second NMOS tube MSW2, the 3rd NMOS tube MSW3Cut Only.3rd node V is adjusted by level adjustment circuit TmLevel value, make the 3rd node VmLevel value close to supply voltage 1/2 times of VDD, make the first PMOS MSW4, the second PMOS MSW5There is larger resistance value, so as to first while conducting Node SAWith section point SBA relatively low work level point is provided, so that the 3rd NMOS tube MSW3Gate source voltage (VGS) and Drain-to-gate voltage (VGD) is less than 1.15 times of supply voltage VDD, so as to increase by the 3rd NMOS tube MSW3Service life.
Also, the 3rd node V is adjusted by level adjustment circuit TmLevel value, make the 3rd node VmLevel value approach In 1/2 times of supply voltage VDD, can also make when control node SEL is low potential, the first PMOS M of conductingSW4, second PMOS MSW5Only there need to be less size, it is possible to larger resistance value is obtained, so as to reduce to switched capacitor array Parasitic capacitance.
With reference to specific embodiment, the switched capacitor array for being set forth in the LC voltage controlled oscillators of the present invention has Beneficial effect.In order to more intuitively illustrate beneficial effects of the present invention, calculate respectively under the same terms (device size is identical), figure 3rd NMOS tube M of switched capacitor array and the switched capacitor array of the LC voltage controlled oscillators of the present invention in 2SW3Grid source electricity The waveform of pressure.
In the present embodiment, the switched capacitor array of switched capacitor array and the LC voltage controlled oscillators of the present invention in Fig. 2 is equal Based on 28nm CMOS technologies, the size of each metal-oxide-semiconductor is as follows：
(W/L)_MSW1=(W/L) _ MSW2=0.5/0.03；(W/L)_MSW3=15.5/0.03；
(W/L)_MSW4=(W/L) _ MSW5=0.13/0.36.
Wherein, (W/L) _ for metal-oxide-semiconductor width and length ratio.
The supply voltage VDD of the switched capacitor array of the present invention is 0.9V, and adjusts the 3rd node VmLevel value be 0.53V。
Fig. 4 is the switched capacitor array and the 3rd of the switched capacitor array of the LC voltage controlled oscillators of the present invention in Fig. 2 NMOS tube MSW3Gate source voltage comparison of wave shape figure.As shown in figure 4, the 3rd NMOS tube in switched capacitor array in Fig. 2 MSW3The maximum of gate source voltage be 1325.5994mV, and the in the switched capacitor array of the LC voltage controlled oscillators of the present invention Three NMOS tube MSW3The maximum of gate source voltage be 820.58212mV.Also, first in the switched capacitor array in Fig. 2 PMOS MSW4, the second PMOS MSW5Conducting resistance be 33K Ω, in the switched capacitor array of LC voltage controlled oscillators of the invention The first PMOS MSW4, the second PMOS MSW5Conducting resistance be 9.2M Ω.
By above-mentioned analysis, the switched capacitor array of LC voltage controlled oscillators of the invention, pass through level adjustment circuit T Adjust the 3rd node VmLevel value, the 3rd NMOS tube M can be madeSW3Gate source voltage (VGS) and drain-to-gate voltage (VGD) be less than 1.15 times of supply voltage VDD, add the 3rd NMOS tube MSW3Service life, and the first PMOS MSW4, the 2nd PMOS Pipe MSW5Only there need to be less size, it is possible to obtain larger resistance value, reduce the parasitism electricity to switched capacitor array Hold.
One of ordinary skill in the art will appreciate that：The preferred embodiments of the present invention are the foregoing is only, and are not had to In the limitation present invention, although the present invention is described in detail with reference to the foregoing embodiments, for those skilled in the art For, its technical scheme that can be still recorded to foregoing embodiments is modified, or which part technical characteristic is entered Row equivalent substitution.Within the spirit and principles of the invention, any modification, equivalent substitution and improvements made etc., all should include Within protection scope of the present invention.

Claims (2)

  1. A kind of 1. switched capacitor array of LC voltage controlled oscillators, it is characterised in that including：
    First NMOS tube, the second NMOS tube, the 3rd NMOS tube, the first PMOS, the second PMOS, first switch electric capacity, second Switching capacity, and level adjustment circuit, wherein,
    First NMOS tube, second NMOS tube, the 3rd NMOS tube, first PMOS, the 2nd PMOS The grid of pipe is connected in control node；
    The drain electrode of first NMOS tube, the 3rd NMOS tube, first PMOS is connected in first node, and with it is described First switch electric capacity is connected, and controls the connecting and disconnecting of the first switch electric capacity；
    Second NMOS tube, the drain electrode of second PMOS and the source electrode of the 3rd NMOS tube are connected in section point, And be connected with the second switch electric capacity, control the connecting and disconnecting of the second switch electric capacity；
    First PMOS, the source electrode of second PMOS are connected in the 3rd node, and pass through the level adjustment circuit It is connected with supply voltage；
    The source ground of first NMOS tube, second NMOS tube.
  2. 2. the switched capacitor array of LC voltage controlled oscillators according to claim 1, it is characterised in that the level adjustment electricity Road, including：First resistor, second resistance and the first electric capacity, wherein,
    The first resistor, the second resistance, one end of first electric capacity are connected with the 3rd node；
    The other end of the first resistor is connected with the supply voltage；
    The second resistance, the other end of first electric capacity are connected and are grounded.
CN201710831633.0A 2017-09-15 2017-09-15 A kind of switched capacitor array of LC voltage controlled oscillators Pending CN107707200A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111342804A (en) * 2020-03-06 2020-06-26 西南交通大学 Frequency modulation circuit of quartz crystal oscillator
CN111800086A (en) * 2020-08-03 2020-10-20 牛芯半导体(深圳)有限公司 Oscillator
CN115051649A (en) * 2022-06-01 2022-09-13 深圳扬兴科技有限公司 Voltage controlled oscillator circuit and operation method thereof

Citations (5)

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Publication number Priority date Publication date Assignee Title
US6226506B1 (en) * 1998-05-29 2001-05-01 Silicon Laboratories, Inc. Method and apparatus for eliminating floating voltage nodes within a discreetly variable capacitance used for synthesizing high-frequency signals for wireless communications
CN1320323A (en) * 1998-09-30 2001-10-31 汤姆森特许公司 Video amplifier with integrated dc level shifting
US20110109396A1 (en) * 2009-11-09 2011-05-12 Renesas Electronics Corporation Resonance type oscillation circuit and semiconductor device
CN103166633A (en) * 2011-12-09 2013-06-19 国民技术股份有限公司 Switched capacitor unit
WO2016144486A1 (en) * 2015-03-10 2016-09-15 Qualcomm Incorporated Phase locked loop (pll) architecture

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6226506B1 (en) * 1998-05-29 2001-05-01 Silicon Laboratories, Inc. Method and apparatus for eliminating floating voltage nodes within a discreetly variable capacitance used for synthesizing high-frequency signals for wireless communications
CN1320323A (en) * 1998-09-30 2001-10-31 汤姆森特许公司 Video amplifier with integrated dc level shifting
US20110109396A1 (en) * 2009-11-09 2011-05-12 Renesas Electronics Corporation Resonance type oscillation circuit and semiconductor device
CN103166633A (en) * 2011-12-09 2013-06-19 国民技术股份有限公司 Switched capacitor unit
WO2016144486A1 (en) * 2015-03-10 2016-09-15 Qualcomm Incorporated Phase locked loop (pll) architecture

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111342804A (en) * 2020-03-06 2020-06-26 西南交通大学 Frequency modulation circuit of quartz crystal oscillator
CN111342804B (en) * 2020-03-06 2022-02-25 西南交通大学 Frequency modulation circuit of quartz crystal oscillator
CN111800086A (en) * 2020-08-03 2020-10-20 牛芯半导体(深圳)有限公司 Oscillator
CN115051649A (en) * 2022-06-01 2022-09-13 深圳扬兴科技有限公司 Voltage controlled oscillator circuit and operation method thereof

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Application publication date: 20180216