CN107707136B - Full-bridge LLC (logical Link control) resonant plasma power supply based on SiC power device - Google Patents
Full-bridge LLC (logical Link control) resonant plasma power supply based on SiC power device Download PDFInfo
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- CN107707136B CN107707136B CN201711017397.5A CN201711017397A CN107707136B CN 107707136 B CN107707136 B CN 107707136B CN 201711017397 A CN201711017397 A CN 201711017397A CN 107707136 B CN107707136 B CN 107707136B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33573—Full-bridge at primary side of an isolation transformer
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/01—Resonant DC/DC converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/4815—Resonant converters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
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- Plasma Technology (AREA)
Abstract
The invention provides a full-bridge LLC resonant plasma power supply based on a SiC power device, which is characterized in that: comprises a main circuit and a control circuit; the main circuit comprises a rectification filter module, a high-frequency full-bridge inversion module, a high-frequency voltage transformation module and a quick rectification filter module which are connected in sequence; the rectification filtering module is connected with a three-phase alternating-current input power supply, and the rapid rectification filtering module is connected with a load; the high-frequency full-bridge inversion module adopts a full-bridge inversion LLC type zero-voltage soft switch topological structure; the high-frequency full-bridge inversion module, the high-frequency transformation module and the rapid rectification and filtering module are respectively connected with the control circuit so as to realize that the control circuit controls the power output. The plasma power supply has high efficiency, high power density and high reliability, can reduce the electromagnetic interference intensity and realize larger power output, has good dynamic response performance, and is beneficial to realizing high-speed accurate regulation and control of a plasma load.
Description
Technical Field
The invention relates to the technical field of special power supplies, in particular to a full-bridge LLC resonant plasma power supply based on a SiC power device.
Background
Plasma power supplies are being developed to meet higher requirements such as high efficiency, high power density (miniaturization), high frequency and high voltage, and are mainly realized by increasing the frequency of power devices and reducing power consumption. At present, a high-power plasma power supply at home and abroad generally adopts Si-based power devices due to the characteristics of high voltage, large current, strong power and the like of the power supply; however, the performance of Si-based power devices has approached the theoretical limit determined by their material properties, and the potential to increase frequency and reduce power consumption has been extremely limited.
Compared with a Si power device, the new generation SiC power device has remarkable advantages in the aspect of switching performance, has the advantages of high forbidden band width, high heat conductivity, critical breakdown field strength and the like, and has good prospects in the aspects of improving the performance of the whole machine, reducing the switching loss, reducing the volume and improving the power density. However, the application of the SiC power device to the plasma power supply is still in a blank state at present; therefore, there is a need to develop a plasma power supply based on SiC power devices to improve its power efficiency and power density.
Disclosure of Invention
The invention aims to overcome the defects and shortcomings in the prior art, and provides a full-bridge LLC resonant plasma power supply which is based on a SiC power device, has high power efficiency, high power density and high reliability, can reduce the electromagnetic interference intensity, can realize larger power output, has good dynamic response performance and is beneficial to realizing high-speed and accurate regulation and control of a plasma load.
In order to achieve the purpose, the invention is realized by the following technical scheme: a full-bridge LLC resonant plasma power supply based on SiC power device is characterized in that: comprises a main circuit and a control circuit; the main circuit comprises a rectification filter module, a high-frequency full-bridge inversion module, a high-frequency voltage transformation module and a quick rectification filter module which are connected in sequence; the rectification filtering module is connected with a three-phase alternating-current input power supply, and the rapid rectification filtering module is connected with a load; the high-frequency full-bridge inversion module adopts a full-bridge inversion LLC type zero-voltage soft switch topological structure; the high-frequency full-bridge inversion module, the high-frequency transformation module and the rapid rectification and filtering module are respectively connected with the control circuit so as to realize that the control circuit controls the power output. In the plasma power supply, a full-bridge inversion LLC type zero-voltage soft switch topological structure is adopted, so that the plasma power supply has high power density and can obtain extremely high conversion efficiency under the loading condition; the resonant commutation frequency is high, the time constant of the main circuit can be reduced, the control period is shorter, the dynamic performance is better, and the plasma load can be conveniently and accurately regulated at a high speed.
Preferably, the high-frequency full-bridge inversion module adopts a full-bridge inversion LLC type zero-voltage soft-switching topology, which means that: the high-frequency full-bridge inversion module comprises an SiC power switch tube Q101, an SiC power switch tube Q102, an SiC power switch tube Q103, an SiC power switch tube Q104, an inductor L102, an inductor L103 and a capacitor C107; the SiC power switch tube Q101 and the SiC power switch tube Q103 are connected in series and then connected to the rectifying and filtering module in parallel; the SiC power switch tube Q102 and the SiC power switch tube Q104 are connected in series and then connected to the rectifying and filtering module in parallel; the connection part of the SiC power switch tube Q101 and the SiC power switch tube Q103 is connected with the connection part of the SiC power switch tube Q102 and the SiC power switch tube Q104 through an inductor L103, a capacitor C107 and an inductor L102 which are connected in sequence; the inductor L103 is connected with the high-frequency transformation module in parallel; the SiC power switch tube Q101 is also connected with a diode D109 and a capacitor C103 in parallel; the SiC power switch tube Q102 is also connected with a diode D110 and a capacitor C104 in parallel; the SiC power switch tube Q103 is also connected with a diode D111 and a capacitor C105 in parallel; the SiC power switch Q104 is also connected in parallel with a diode D112 and a capacitor C106. In the invention, the high-frequency full-bridge inversion module adopts a full-bridge inversion LLC type zero-voltage soft switch topological structure, is suitable for the application occasion of high-voltage output, and can improve the efficiency and realize high-frequency miniaturization. The high-frequency inversion technology can enhance the transmission power and improve the energy conversion efficiency; the LLC resonance technology can improve the power density and can obtain extremely high conversion efficiency under the loading condition; the zero voltage soft switching mode is implemented by: the SiC power switch tubes Q101-Q104 utilize the diodes D109-D112 and the capacitors C103-C106 which are connected in parallel, when the capacitors C103-C106 discharge to zero, the diodes D109-D112 connected in parallel are naturally conducted, the grid-source voltage of the SiC power switch tubes Q101-Q104 is clamped to zero, the zero voltage switching can be realized by switching on the SiC power switch tubes Q101-Q104, the power commutation can be realized by utilizing a zero voltage soft switching mode, the switching loss of a power device is reduced, and the requirement of high efficiency and high power density is met; the power switch tube of the high-frequency full-bridge inversion module needs to bear lower voltage, the damage of the power switch tube can be avoided, and the SiC power switch tube is used as the power switch tube, so that the withstand voltage value is up to 1200V; the SiC power switch tubes are connected in parallel, and the requirement of high power can be met.
Preferably, the high-frequency transforming module comprises a high-frequency transformer T101; the fast rectification filtering module comprises a rectification diode D113, a rectification diode D114, a capacitor C108, a capacitor C109 and a reactance L104; the primary side of the high-frequency transformer T101 is connected with the high-frequency full-bridge inversion module; the first secondary output end of the high-frequency transformer T101 is connected with the second secondary output end of the high-frequency transformer T101 through a rectifier diode D113 and a capacitor C108 which are connected in sequence; the secondary output end of the high-frequency transformer T101 is connected with the junction of a rectifier diode D113 and a capacitor C108 through a rectifier diode D114; the reactance L104 and the capacitor C109 are connected in series and then connected in parallel to the capacitor C108; the capacitor C109 is connected in parallel with the load. The fast rectification filtering module adopts a full-wave rectification structure, the circuit structure is simple, and the current fluctuation amplitude is small; the reactance L104 can realize high-performance smooth filtering, effectively improve current ripple and is beneficial to improving the welding quality.
Preferably, the rectifier diode D113 and the rectifier diode D114 both use SiC schottky diodes; no reverse recovery current, high voltage withstanding value up to 650V, greatly reduced switching loss and increased switching frequency.
Preferably, the control circuit comprises a resonance mode controller, a high-frequency driving module, a peak current detection module, a voltage feedback module, an overvoltage detection module, an undervoltage detection module and a power supply module; the resonance mode controller is connected with the high-frequency full-bridge inversion module through the high-frequency driving module; the high-frequency voltage transformation module is connected with the resonance mode controller through the peak current detection module; the fast rectification filtering module is connected with the resonance mode controller through the voltage feedback module and the overvoltage detection module respectively; the rectification filtering module is connected with the resonance mode controller through the under-voltage detection module; the power supply module is respectively connected with the resonance mode controller and the high-frequency driving module.
Preferably, the high-frequency driving module comprises a high-frequency amplifier U201, a high-frequency amplifier U202, a blocking capacitor C201, a first voltage clamping circuit, a second voltage clamping circuit, a high-frequency pulse transformer T201 and two high-frequency driving signal generating circuits;
the resonant mode controller comprises a resonant mode control chip; the resonant mode control chip comprises an interface for generating a PFM1 signal and an interface for generating a PFM2 signal; the interface for generating PFM1 signals is connected with the first primary input end of the high-frequency pulse transformer T201 through a high-frequency amplifier U201, a blocking capacitor C201 and a first voltage clamping circuit which are connected in sequence, and the interface for generating PFM2 signals is connected with the second primary input end of the high-frequency pulse transformer T201 through a high-frequency amplifier U202 and a second voltage clamping circuit which are connected in sequence;
the high-frequency pulse transformer T201 is provided with two secondary sides, the two high-frequency driving signal generating circuits have the same structure, and the two high-frequency driving signal generating circuits are respectively connected to the secondary sides of the two high-frequency pulse transformers T201 in opposite directions.
Preferably, the first voltage clamping circuit comprises a diode D201 and a diode D202; the diode D201 and the diode D202 are connected and then connected with the power supply module; the junction of the diode D201 and the diode D202 is respectively connected with the blocking capacitor C201 and the first primary input end of the high-frequency pulse transformer T201;
the voltage clamping circuit comprises a diode D203 and a diode D204; the diode D203 and the diode D204 are connected and then connected with the power supply module; the junction of the diode D203 and the diode D204 is connected to the high-frequency amplifier U202 and the second primary input terminal of the high-frequency pulse transformer T201, respectively.
Preferably, the high-frequency driving signal generating circuit comprises a resistor R201, a resistor R202, a resistor R203, a resistor R204, a resistor R205, a drain resistor R206, a capacitor C202, a capacitor C203, a diode D205, a diode D206, a diode D207, a diode D208, a zener diode ZD201, a zener diode ZD202, a zener diode ZD203 and an N-type power switch tube Q201; the first secondary output end of the high-frequency pulse transformer T201 is connected with the second secondary output end of the high-frequency pulse transformer T201 through a resistor R202 and a diode D205 which are connected in sequence; the source electrode of the N-type power switch tube Q201 is connected with a diode D206 and then connected in parallel with a resistor R202; the diode D207 and the resistor R203 are connected to form a series circuit, and then are connected in series with the voltage stabilizing diode ZD201 and then are connected in parallel on the drain-source electrode of the N-type power switch tube Q201; the voltage stabilizing diode ZD203 and the voltage stabilizing diode ZD202 are reversely connected in series and then are connected in parallel on the series circuit; the resistor R204, the diode D208 and the drain resistor R206 are connected in series and then connected in parallel on the series circuit; the resistor R201 is connected with the diode D205 in parallel; the capacitor C202 is connected with the voltage stabilizing diode ZD201 in parallel; the resistor R205 is connected in parallel with the diode D208; the capacitor C203 is connected with the drain resistor R206 in parallel; and two ends of the capacitor C203 are respectively connected with the high-frequency full-bridge inverter module.
Because the switching frequency of the SiC power switch tube is high, a larger driving power is required, and thus a higher requirement is put on a high-frequency driving module. The high-frequency driving module adopts two high-frequency amplifiers to form a push-pull structure, and has enough driving power to meet the high switching frequency of the SiC power switching tube. The turn-off of the SiC power switch tube is accelerated by utilizing the negative pressure generated by the voltage stabilizing diode ZD201 connected with the capacitor C202 in parallel, so that the false conduction of the SiC power switch tube is prevented; the capacitor C203 is a SiC power switch tube grid source electrode parallel capacitor and plays a role in inhibiting driving voltage spikes.
Preferably, the resonant mode control chip is a resonant mode control chip with model number NCP 1395B. The resonant mode control chip with the model number of NCP1395B has a reliable and stable resonant mode, has extremely low standby energy consumption, provides all necessary functions and greatly simplifies the design of a control circuit; the key characteristics of the soft start circuit comprise a wide frequency range of 50 kHz-1.0 MHz, adjustable dead time (dead time), adjustable soft start, adjustable minimum and maximum frequency, low start current, undervoltage detection, adjustable fault timer interval and hop period possibility and the like; its protection functions, such as immediate shutdown or timer-based events, undervoltage, etc., help to build a safer converter design without adding complex circuitry.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the plasma power supply has higher energy efficiency and power density: all power devices of the plasma power supply adopt wide bandgap SiC power devices, so that high-frequency soft switching is realized, the size and the weight of the whole machine are smaller, the dynamic loss is lower, the power density and the efficiency are higher, and the energy conversion efficiency can reach more than 98%;
2. the plasma power supply has better dynamic response performance: by adopting a full-bridge inversion LLC type zero-voltage soft switch topological structure, the resonant commutation frequency reaches 500kHz, the time constant of a main circuit is reduced, the control period is shorter, and the dynamic performance is better; the reliability is high, the efficiency is improved, the electromagnetic interference intensity is reduced, and larger power output can be realized;
3. the plasma power supply has more excellent process performance: the invention has higher inversion frequency and better dynamic response performance, so that the invention is easier to realize high-speed accurate regulation and control of the plasma load.
Drawings
FIG. 1 is a block diagram of the system architecture of the plasma power supply of the present invention;
FIG. 2 is a schematic diagram of the main circuit of the plasma power supply of the present invention;
FIG. 3 is a schematic circuit diagram of a high frequency drive module of the plasma power supply of the present invention;
fig. 4 is a circuit schematic diagram of a resonant mode controller of the plasma power supply of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Examples
As shown in fig. 1 to 4, the full-bridge LLC resonant plasma power supply based on the SiC power device in the present embodiment includes a main circuit and a control circuit; the main circuit comprises a rectification filter module, a high-frequency full-bridge inversion module, a high-frequency voltage transformation module and a quick rectification filter module which are connected in sequence; the rectification filtering module is connected with a three-phase alternating current input power supply, and the rapid rectification filtering module is connected with a load.
The high-frequency full-bridge inversion module comprises an SiC power switch tube Q101, an SiC power switch tube Q102, an SiC power switch tube Q103, an SiC power switch tube Q104, an inductor L102, an inductor L103 and a capacitor C107; the SiC power switch tube Q101 and the SiC power switch tube Q103 are connected in series and then connected to the rectifying and filtering module in parallel; the SiC power switch tube Q102 and the SiC power switch tube Q104 are connected in series and then connected to the rectifying and filtering module in parallel; the connection part of the SiC power switch tube Q101 and the SiC power switch tube Q103 is connected with the connection part of the SiC power switch tube Q102 and the SiC power switch tube Q104 through an inductor L103, a capacitor C107 and an inductor L102 which are connected in sequence; the inductor L103 is connected with the high-frequency transformation module in parallel; the SiC power switch tube Q101 is also connected with a diode D109 and a capacitor C103 in parallel; the SiC power switch tube Q102 is also connected with a diode D110 and a capacitor C104 in parallel; the SiC power switch tube Q103 is also connected with a diode D111 and a capacitor C105 in parallel; the SiC power switch Q104 is also connected in parallel with a diode D112 and a capacitor C106. In the invention, the high-frequency full-bridge inversion module adopts a full-bridge inversion LLC type zero-voltage soft switch topological structure, is suitable for the application occasion of high-voltage output, and can improve the efficiency and realize high-frequency miniaturization. The high-frequency inversion technology can enhance the transmission power and improve the energy conversion efficiency; the LLC resonance technology can improve the power density and can obtain extremely high conversion efficiency under the loading condition; the zero voltage soft switching mode is implemented by: the SiC power switch tubes Q101-Q104 utilize the diodes D109-D112 and the capacitors C103-C106 which are connected in parallel, when the capacitors C103-C106 discharge to zero, the diodes D109-D112 connected in parallel are naturally conducted, the grid-source voltage of the SiC power switch tubes Q101-Q104 is clamped to zero, and the zero voltage can be switched on by switching on the SiC power switch tubes Q101-Q104; the zero-voltage soft switching mode is utilized to realize power commutation, reduce the switching loss of a power device and meet the requirements of high efficiency and high power density; the power switch tube of the high-frequency full-bridge inversion module needs to bear lower voltage, the damage of the power switch tube can be avoided, and the SiC power switch tube is used as the power switch tube, so that the withstand voltage value is up to 1200V; the SiC power switch tubes are connected in parallel, and the requirement of high power can be met.
The high-frequency transformation module comprises a high-frequency transformer T101; the fast rectification filter module comprises a rectifier diode D113, a rectifier diode D114, a capacitor C108, a capacitor C109 and a reactance L104; the primary of the high-frequency transformer T101 is connected in parallel with the inductor L103; the first secondary output end of the high-frequency transformer T101 is connected with the second secondary output end of the high-frequency transformer T101 through a rectifier diode D113 and a capacitor C108 which are connected in sequence; the secondary output end of the high-frequency transformer T101 is connected with the junction of a rectifier diode D113 and a capacitor C108 through a rectifier diode D114; the reactance L104 and the capacitor C109 are connected in series and then connected in parallel to the capacitor C108; the capacitor C109 is connected in parallel with the load. The fast rectification filtering module adopts a full-wave rectification structure, the circuit structure is simple, and the current fluctuation amplitude is small; the reactance L104 can realize high-performance smooth filtering, effectively improve current ripple and is beneficial to improving the welding quality.
Both the rectifier diode D113 and the rectifier diode D114 adopt SiC Schottky diodes; no reverse recovery current, high voltage withstanding value up to 650V, greatly reduced switching loss and increased switching frequency.
The working principle of the main circuit of the plasma power supply is as follows: firstly, a three-phase alternating current input power supply is connected with a rectification filtering module to enable alternating current to be smoothly filtered into direct current; the direct current is input into a high-frequency full-bridge inversion module, and two paths of complementary PFM signals control two opposite-angle power switch tubes to be simultaneously switched on or switched off in a high-frequency mode through a full-bridge inversion circuit formed by a SiC power switch tube Q101, a SiC power switch tube Q102, a SiC power switch tube Q103 and a SiC power switch tube Q104, so that the direct current is converted into high-frequency sine wave alternating current; the diode D109, the diode D110, the diode D111 and the diode D112 are anti-parallel diodes of the SiC power switch tube Q101, the SiC power switch tube Q102, the SiC power switch tube Q103 and the SiC power switch tube Q104 respectively; the capacitor C103, the capacitor C104, the capacitor C105 and the capacitor C106 are output filter capacitors of the SiC power switch tube Q101, the SiC power switch tube Q102, the SiC power switch tube Q103 and the SiC power switch tube Q104 respectively; then, high-frequency sine wave alternating current flows into a high-frequency voltage transformation module to carry out voltage transformation; the high-voltage high-frequency sine wave alternating current after overvoltage conversion enters a rapid rectification filtering module to be converted into smooth direct current; wherein the reactance L104 can further reduce the ripple current, but because of the increase of the frequency, the reactance value is greatly reduced, thereby reducing the weight and volume of the reactance. The high-frequency full-bridge inversion module modulates the output voltage value, and the output voltage is stabilized through the modulation of frequency, so that constant voltage output is realized.
The control circuit comprises a resonance mode controller, a high-frequency driving module, a peak current detection module, a voltage feedback module, an overvoltage detection module, an undervoltage detection module and a power supply module; the resonance mode controller is connected with the high-frequency full-bridge inversion module through the high-frequency driving module; the high-frequency voltage transformation module is connected with the resonance mode controller through the peak current detection module; the fast rectification filtering module is connected with the resonance mode controller through the voltage feedback module and the overvoltage detection module respectively; the rectification filtering module is connected with the resonance mode controller through the under-voltage detection module; the power supply module is respectively connected with the resonance mode controller and the high-frequency driving module.
The high-frequency driving module comprises a high-frequency amplifier U201, a high-frequency amplifier U202, a blocking capacitor C201, a voltage clamping circuit I, a voltage clamping circuit II, a high-frequency pulse transformer T201 and two high-frequency driving signal generating circuits;
the resonance mode controller comprises a resonance mode control chip; the resonant mode control chip comprises an interface for generating a PFM1 signal and an interface for generating a PFM2 signal; the interface for generating PFM1 signals is connected with the first primary input end of the high-frequency pulse transformer T201 through a high-frequency amplifier U201, a blocking capacitor C201 and a first voltage clamping circuit which are connected in sequence, and the interface for generating PFM2 signals is connected with the second primary input end of the high-frequency pulse transformer T201 through a high-frequency amplifier U202 and a second voltage clamping circuit which are connected in sequence;
the high-frequency pulse transformer T201 is provided with two secondary stages, the two high-frequency driving signal generating circuits have the same structure, and the two high-frequency driving signal generating circuits are respectively connected to the secondary stages of the two high-frequency pulse transformers T201 in opposite directions.
The voltage clamping circuit comprises a diode D201 and a diode D202; the diode D201 and the diode D202 are connected and then connected with the power supply module; the junction of the diode D201 and the diode D202 is respectively connected with the blocking capacitor C201 and the first primary input end of the high-frequency pulse transformer T201;
the voltage clamping circuit comprises a diode D203 and a diode D204; the diode D203 and the diode D204 are connected and then connected with the power supply module; the junction of the diode D203 and the diode D204 is connected to the high-frequency amplifier U202 and the second primary input terminal of the high-frequency pulse transformer T201, respectively. Diodes D201 and D202 and diodes D203 and D204 may clamp the voltage value between VCC and ground.
The high-frequency driving signal generating circuit comprises a resistor R201, a resistor R202, a resistor R203, a resistor R204, a resistor R205, a drain resistor R206, a capacitor C202, a capacitor C203, a diode D205, a diode D206, a diode D207, a diode D208, a zener diode ZD201, a zener diode ZD202, a zener diode ZD203 and an N-type power switch tube Q201; the first secondary output end of the high-frequency pulse transformer T201 is connected with the second secondary output end of the high-frequency pulse transformer T201 through a resistor R202 and a diode D205 which are connected in sequence; the source electrode of the N-type power switch tube Q201 is connected with a diode D206 and then connected in parallel with a resistor R202; the diode D207 and the resistor R203 are connected to form a series circuit, and then are connected in series with the voltage stabilizing diode ZD201 and then are connected in parallel on the drain-source electrode of the N-type power switch tube Q201; the voltage stabilizing diode ZD203 and the voltage stabilizing diode ZD202 are reversely connected in series and then are connected in parallel on the series circuit; the resistor R204, the diode D208 and the drain resistor R206 are connected in series and then connected in parallel on the series circuit; the resistor R201 is connected with the diode D205 in parallel; the capacitor C202 is connected with the voltage stabilizing diode ZD201 in parallel; the resistor R205 is connected in parallel with the diode D208; the capacitor C203 is connected with the drain resistor R206 in parallel;
the principle of one of the high frequency drive signal generating circuits is that: when the first secondary output terminal of the high frequency pulse transformer T201 senses a low level and the second secondary output terminal of the high frequency pulse transformer T201 senses a high level, the second secondary output terminal of the high frequency pulse transformer T201 outputs a high level to the output port G by sequentially connecting the diode D205, the resistor R204 and the resistor R2051(ii) a The secondary output terminal of the high frequency pulse transformer T201 outputs a low level to the output port S by connecting the diode D206 and the voltage stabilizing diode 201 in order1(ii) a A secondary output end II of the high-frequency pulse transformer T201 senses and outputs a high level to charge a capacitor C202 through a diode D205 and the series circuit;
when the first secondary output end of the high-frequency pulse transformer T201 inductively outputs a high level and the second secondary output end of the high-frequency pulse transformer T201 inductively outputs a low level, the first secondary output end of the high-frequency pulse transformer T201 is connected with the second secondary output end of the high-frequency pulse transformer T201 through a resistor R202 and a resistor R201 which are sequentially connected; the high level is divided by a resistor R202 and a resistor R201, and the junction of the resistor R202 and the resistor R201 outputs the low level to an output port G through a resistor R204 and a diode D2081(ii) a At this time, the N-type power switch Q201 is turned on, the capacitor C202 starts to discharge, and the junction between the resistor R202 and the resistor R201 outputs a high level to the output port S via the N-type power switch Q201 and the capacitor C2021；
Another high frequency driving signalThe signal generating circuit also adopts the same working principle to make the output port G2S2Generating a high frequency drive signal; output terminal G of two high-frequency driving signal generating circuits1S1And G2S2And is connected with the high-frequency full-bridge inversion module.
Because the switching frequency of the SiC power switch tube is high, a larger driving power is required, and thus a higher requirement is put on a high-frequency driving module. The high-frequency driving module adopts two high-frequency amplifiers to form a push-pull structure, and has enough driving power to meet the high switching frequency of the SiC power switching tube. The turn-off of the SiC power switch tube is accelerated by utilizing the negative pressure generated by the voltage stabilizing diode ZD201 connected with the capacitor C202 in parallel, so that the false conduction of the SiC power switch tube is prevented; the capacitor C203 is a SiC power switch tube grid source electrode parallel capacitor and plays a role in inhibiting driving voltage spikes.
The resonance mode control chip can adopt a digital microprocessor chip or a special resonance mode control chip; one preferred resonant mode control chip is the resonant mode control chip model number NCP 1395B. The resonant mode control chip with the model number of NCP1395B has a reliable and stable resonant mode, has extremely low standby energy consumption, provides all necessary functions and greatly simplifies the design of a control circuit; the key characteristics of the soft start circuit comprise a wide frequency range of 50 kHz-1.0 MHz, adjustable dead time (dead time), adjustable soft start, adjustable minimum and maximum frequency, low start current, undervoltage detection, adjustable fault timer interval and hop period possibility and the like; its protection functions, such as immediate shutdown or timer-based events, undervoltage, etc., help to build a safer converter design without adding complex circuitry. Since it is important to avoid resonance spikes in the resonant circuit structure, the resonant mode control chip model NCP1395B has built in an adjustable and accurate minimum switching frequency in order to operate the topology in the proper operating region.
The resonant mode control chip of model NCP1395B is set up such that:
base pin FminAnd pin FmaxRespectively setting ends for lowest and highest working frequencies, wherein the lowest and highest frequency values can be set through selection of external resistors R301 and R302, and the resistance value and the frequency are called to have a nonlinear relation;
the pin DT is a dead time setting end, the dead time is determined according to an external resistor R303, and faults caused by the straight-through of a diagonal bridge arm of the high-frequency full-bridge inverter module are prevented;
pin CssIs a soft start end, wherein C301 is an external capacitor, the normal soft start working voltage point is 3.5V, if the feedback voltage V isfbIf the voltage is lower than 0.6V, the soft start is started ceaselessly;
the pin FB is a voltage stabilization feedback end, wherein C302 is an external capacitor, R312 and R313 are divider resistors, D302 is a voltage stabilization diode, the output voltage value of the fast rectification filter module passes through the voltage feedback module, two output ports of an output optocoupler in the voltage feedback module are respectively connected with an input port RT and an RT-RTN, the input port RT and the RT-RTN are controlled to be closed and opened by controlling the on-off of the optocoupler, when the input port RT and the RT-RTN are closed through the optocoupler, a power supply is divided by the resistor R312 and the resistor R313 to obtain feedback voltage, and when the feedback voltage value is 0-0.6V, the resonance mode controller judges that the fault occurs; when the feedback voltage value is 0.6V-1.3V, the frequency of the output waveform is fixed at the minimum value Fmin(ii) a The frequency variation Delta F of the feedback voltage value is 1.3V-6VswAnd a feedback voltage DeltaVfbIn a direct proportion relation; when the feedback voltage exceeds 6V, the resonant mode controller stops operating. Stabilizing the output voltage value of the fast rectification filter module by changing the frequency;
pin CtimerA fault detection time setting end for setting fault detection time through charging and discharging of an external resistor R304 and a capacitor C303;
a pin BO is an under-Voltage protection detection end, C304 is an external capacitor, R305 is a divider resistor, a three-phase alternating current input power supply is rectified and filtered by a rectifying and filtering module, a detection Voltage value Brown-Down Voltage is obtained by the under-Voltage detection module, the pin BO is input, and if the Voltage value exceeds the range of 1.03V-4.1V, the resonance mode controller stops working; the output voltage value of the fast rectification filter module obtains a detection voltage value OVP-SIG through an overvoltage detection module, when an overvoltage signal is detected, a PNP type triode N301 is switched on, R316 is a current-limiting resistor, voltage VCC passes through a voltage-dividing resistor R314 and a voltage-dividing resistor R315, the voltage value on the resistor R315 is obtained, the voltage value is input into a base pin BO through a diode D301, and if the voltage value exceeds the range of 1.03V-4.1V, the resonant mode controller stops working;
pin A _ GND is analog ground, pin P _ GND is digital ground, and two grounds are connected to GND;
the pin SW _ A and the pin SW _ B are respectively a low-end driving pulse output end and a high-end driving pulse output end, the pin SW _ A is an interface for generating a PFM1 signal, the pin SW _ B is an interface for generating a PFM2 signal, and a driving signal is generated by electrical isolation and amplification of the high-frequency driving module to drive four SiC power switching tubes of the high-frequency full-bridge inversion module to control the switching on or off of the four SiC power switching tubes, so that the constant-voltage characteristic closed-loop control of output voltage is realized to meet the requirement of a set voltage value;
pin VCC is a power supply terminal, wherein C305 and C308 are external capacitors, and D301 is a zener diode;
the pins F-Fault and S-Fault are fast and slow Fault detection pins respectively, and the feedback voltage V isfbThe resistor R309 and the resistor R308 are respectively connected with the pin F-Fault and the pin S-Fault. The Fault starting voltage of the pin 13F-Fault is 1.05V, the Fault closing recovery voltage is 1.03V, and the voltage is according to the feedback voltage value VfbControlling the resonant mode controller to turn on or off, wherein C306 is an external capacitor and R307 is an external resistor. The Fault starting voltage of the pin S-Fault is 1.03V, the peak current detection module obtains a primary side current value of the high-frequency transformation module by using a current sensor, the primary side current value flows into the resonance mode controller through the input port CS, wherein R306, R310 and R311 are shunt resistors, and C307 is a parallel capacitor; when a fault occurs, the timer starts counting down and at the end of time the resonant mode controller is turned off.
The voltage feedback module is used for detecting the output voltage value of the fast rectifying and filtering module, and the prior art can be adopted.
The under-voltage detection module is used for detecting the input voltage value of the rectification filter module and can adopt the prior art.
The peak current detection module is used for obtaining the primary side current value of the high-frequency transformation module and can adopt the prior art.
The overvoltage detection module is used for detecting the output voltage value of the rapid rectification filter module and can adopt the prior art.
The plasma power supply realizes high-frequency high-voltage output, can meet the requirements of high efficiency, high power density and miniaturization, and is a new generation of plasma power supply; the method has the following specific advantages:
1. high frequency and miniaturization: the full-bridge LLC resonant plasma power supply based on the full-SiC power device is innovatively adopted, the full-bridge LLC resonant plasma power supply based on the full-SiC power device is constructed, high frequency is realized, the size and the weight of a high-frequency voltage transformation module, a heat dissipation system and a fast rectification filter module are greatly reduced, the dynamic response is good, the dynamic loss is greatly reduced, and the performance of the whole machine is improved;
2. high efficiency: the invention fully utilizes the strong design flexibility of the resonance mode control chip with the model number of NCP1395B, has simple, stable and reliable external circuit, and is easy to realize the accurate control of the plasma power supply; by adopting LLC type soft switch current conversion technology, the high-frequency full-bridge inversion module has high energy conversion efficiency, high power density and good reliability, is beneficial to improving the efficiency, and can reduce the electromagnetic interference intensity and realize larger power output.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (7)
1. A full-bridge LLC resonant plasma power supply based on SiC power device is characterized in that: comprises a main circuit and a control circuit; the main circuit comprises a rectification filter module, a high-frequency full-bridge inversion module, a high-frequency voltage transformation module and a quick rectification filter module which are connected in sequence; the rectification filtering module is connected with a three-phase alternating-current input power supply, and the rapid rectification filtering module is connected with a load; the high-frequency full-bridge inversion module adopts a full-bridge inversion LLC type zero-voltage soft switch topological structure; the high-frequency full-bridge inversion module, the high-frequency transformation module and the rapid rectification filtering module are respectively connected with the control circuit so as to realize that the control circuit controls the output of the power supply;
the control circuit comprises a resonance mode controller, a high-frequency driving module and a power supply module; the resonance mode controller is connected with the high-frequency full-bridge inversion module through the high-frequency driving module; the power supply module is respectively connected with the resonance mode controller and the high-frequency driving module;
the high-frequency driving module comprises a high-frequency amplifier U201, a high-frequency amplifier U202, a blocking capacitor C201, a first voltage clamping circuit, a second voltage clamping circuit, a high-frequency pulse transformer T201 and two high-frequency driving signal generating circuits;
the resonant mode controller comprises a resonant mode control chip; the resonant mode control chip comprises an interface for generating a PFM1 signal and an interface for generating a PFM2 signal; the interface for generating PFM1 signals is connected with the first primary input end of the high-frequency pulse transformer T201 through a high-frequency amplifier U201, a blocking capacitor C201 and a first voltage clamping circuit which are connected in sequence, and the interface for generating PFM2 signals is connected with the second primary input end of the high-frequency pulse transformer T201 through a high-frequency amplifier U202 and a second voltage clamping circuit which are connected in sequence;
the high-frequency pulse transformer T201 is provided with two secondary stages, the two high-frequency driving signal generating circuits have the same structure, and the two high-frequency driving signal generating circuits are respectively connected to the secondary stages of the two high-frequency pulse transformers T201 in opposite directions;
the high-frequency driving signal generating circuit comprises a resistor R201, a resistor R202, a resistor R203, a resistor R204, a resistor R205, a drain resistor R206, a capacitor C202, a capacitor C203, a diode D205, a diode D206, a diode D207, a diode D208, a zener diode ZD201, a zener diode ZD202, a zener diode ZD203 and an N-type power switch tube Q201; the first secondary output end of the high-frequency pulse transformer T201 is connected with the second secondary output end of the high-frequency pulse transformer T201 through a resistor R202 and a diode D205 which are connected in sequence; the source electrode of the N-type power switch tube Q201 is connected with a diode D206 and then connected in parallel with a resistor R202; the diode D207 and the resistor R203 are connected to form a series circuit, and then are connected in series with the voltage stabilizing diode ZD201 and then are connected in parallel on the drain-source electrode of the N-type power switch tube Q201; the voltage stabilizing diode ZD203 and the voltage stabilizing diode ZD202 are reversely connected in series and then are connected in parallel on the series circuit; the resistor R204, the diode D208 and the drain resistor R206 are connected in series and then connected in parallel on the series circuit; the resistor R201 is connected with the diode D205 in parallel; the capacitor C202 is connected with the voltage stabilizing diode ZD201 in parallel; the resistor R205 is connected in parallel with the diode D208; the capacitor C203 is connected with the drain resistor R206 in parallel; and two ends of the capacitor C203 are respectively connected with the high-frequency full-bridge inverter module.
2. The full-bridge LLC resonant plasma power supply based on SiC power device as claimed in claim 1, wherein: the high-frequency full-bridge inversion module adopts a full-bridge inversion LLC type zero-voltage soft switch topological structure, and the high-frequency full-bridge inversion module refers to the following steps: the high-frequency full-bridge inversion module comprises an SiC power switch tube Q101, an SiC power switch tube Q102, an SiC power switch tube Q103, an SiC power switch tube Q104, an inductor L102, an inductor L103 and a capacitor C107; the SiC power switch tube Q101 and the SiC power switch tube Q103 are connected in series and then connected to the rectifying and filtering module in parallel; the SiC power switch tube Q102 and the SiC power switch tube Q104 are connected in series and then connected to the rectifying and filtering module in parallel; the connection part of the SiC power switch tube Q101 and the SiC power switch tube Q103 is connected with the connection part of the SiC power switch tube Q102 and the SiC power switch tube Q104 through an inductor L103, a capacitor C107 and an inductor L102 which are connected in sequence; the inductor L103 is connected with the high-frequency transformation module in parallel; the SiC power switch tube Q101 is also connected with a diode D109 and a capacitor C103 in parallel; the SiC power switch tube Q102 is also connected with a diode D110 and a capacitor C104 in parallel; the SiC power switch tube Q103 is also connected with a diode D111 and a capacitor C105 in parallel; the SiC power switch Q104 is also connected in parallel with a diode D112 and a capacitor C106.
3. The full-bridge LLC resonant plasma power supply based on SiC power device as claimed in claim 1, wherein: the high-frequency transformation module comprises a high-frequency transformer T101; the fast rectification filtering module comprises a rectification diode D113, a rectification diode D114, a capacitor C108, a capacitor C109 and a reactance L104; the primary side of the high-frequency transformer T101 is connected with the high-frequency full-bridge inversion module; the first secondary output end of the high-frequency transformer T101 is connected with the second secondary output end of the high-frequency transformer T101 through a rectifier diode D113 and a capacitor C108 which are connected in sequence; the secondary output end of the high-frequency transformer T101 is connected with the junction of a rectifier diode D113 and a capacitor C108 through a rectifier diode D114; the reactance L104 and the capacitor C109 are connected in series and then connected in parallel to the capacitor C108; the capacitor C109 is connected in parallel with the load.
4. The full-bridge LLC resonant plasma power supply based on SiC power device of claim 3, wherein: the rectifying diode D113 and the rectifying diode D114 both adopt SiC Schottky diodes.
5. The full-bridge LLC resonant plasma power supply based on SiC power device as claimed in claim 1, wherein: the control circuit also comprises a peak current detection module, a voltage feedback module, an overvoltage detection module and an undervoltage detection module; the high-frequency voltage transformation module is connected with the resonance mode controller through the peak current detection module; the fast rectification filtering module is connected with the resonance mode controller through the voltage feedback module and the overvoltage detection module respectively; the rectification filtering module is connected with the resonance mode controller through the under-voltage detection module.
6. The full-bridge LLC resonant plasma power supply based on SiC power device as claimed in claim 1, wherein: the first voltage clamping circuit comprises a diode D201 and a diode D202; the diode D201 and the diode D202 are connected and then connected with the power supply module; the junction of the diode D201 and the diode D202 is respectively connected with the blocking capacitor C201 and the first primary input end of the high-frequency pulse transformer T201;
the voltage clamping circuit comprises a diode D203 and a diode D204; the diode D203 and the diode D204 are connected and then connected with the power supply module; the junction of the diode D203 and the diode D204 is connected to the high-frequency amplifier U202 and the second primary input terminal of the high-frequency pulse transformer T201, respectively.
7. The full-bridge LLC resonant plasma power supply based on SiC power device as claimed in claim 1, wherein: the resonant mode control chip is a resonant mode control chip with the model number of NCP 1395B.
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| CN201711017397.5A CN107707136B (en) | 2017-10-26 | 2017-10-26 | Full-bridge LLC (logical Link control) resonant plasma power supply based on SiC power device |
| PCT/CN2018/074687 WO2019080400A1 (en) | 2017-10-26 | 2018-01-31 | Sic power device-based full-bridge llc resonant plasma power supply |
| ZA2020/02052A ZA202002052B (en) | 2017-10-26 | 2020-05-04 | Sic power device-based full-bridge llc resonant plasma power supply |
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| CN108127239B (en) * | 2018-03-02 | 2023-12-01 | 华南理工大学 | Aluminum alloy robot variable polarity plasma arc intelligent perforation welding system |
| CN108738223B (en) * | 2018-06-18 | 2020-11-06 | 安徽航天环境工程有限公司 | Plasma treatment device for gaseous waste |
| CN108811291A (en) * | 2018-06-18 | 2018-11-13 | 安徽航天环境工程有限公司 | A kind of low-temperature plasma device |
| EP3605582A1 (en) | 2018-08-02 | 2020-02-05 | TRUMPF Huettinger Sp. Z o. o. | Power converter and power supply system |
| CN110190818A (en) * | 2019-06-20 | 2019-08-30 | 云南电网有限责任公司电力科学研究院 | A kind of current amplifier |
| CN110868073B (en) * | 2019-08-26 | 2021-04-13 | 哈尔滨工业大学 | Series connection SiC MOSFET drive circuit based on multi-winding transformer coupling |
| CN112039341B (en) * | 2019-11-13 | 2021-12-31 | 扬州船用电子仪器研究所(中国船舶重工集团公司第七二三研究所) | Driving method of symmetrical half-bridge LC series resonance sine power conversion circuit |
| CN112039342B (en) * | 2019-11-13 | 2021-12-31 | 扬州船用电子仪器研究所(中国船舶重工集团公司第七二三研究所) | Drive circuit of symmetrical half-bridge resonance open-loop direct current proportional converter |
| CN211405872U (en) * | 2019-12-27 | 2020-09-01 | 天津工业大学 | Rectification system based on GaN power device |
| CN111585450A (en) * | 2020-06-24 | 2020-08-25 | 安徽省金屹电源科技有限公司 | High-power high-frequency switching power supply module and device |
| CN112467998B (en) * | 2020-10-14 | 2022-03-29 | 华南理工大学 | Energy density adjustable multi-working mode plasma power supply |
| CN112332504A (en) * | 2020-10-19 | 2021-02-05 | 西安电子科技大学芜湖研究院 | Intelligent charger power supply control system, control method, computer equipment and application |
| CN112953246B (en) * | 2021-02-23 | 2023-03-07 | 哈尔滨工业大学（深圳） | High-frequency power source system and load driving system |
| CN113037125B (en) * | 2021-03-15 | 2022-01-07 | 无锡复溪电子科技有限公司 | Resonance repetition frequency high-voltage pulse power supply for generating low-temperature plasma |
| CN113262038B (en) * | 2021-06-19 | 2024-04-16 | 安徽奥弗医疗设备科技股份有限公司 | Plasma scalpel power control system |
| CN113765396B (en) * | 2021-09-03 | 2023-08-25 | 广西中科蓝谷半导体科技有限公司 | High-integration ACDC switching power supply chip |
| CN114362558A (en) * | 2022-01-04 | 2022-04-15 | 广州赛隆增材制造有限责任公司 | High-voltage power supply for electron gun |
| CN115603585A (en) * | 2022-10-25 | 2023-01-13 | 江苏省送变电有限公司（Cn） | Self-adaptive adjusting device and method for power amplifier power supply |
| CN116191550A (en) * | 2023-03-29 | 2023-05-30 | 苏州博沃创新能源科技有限公司 | Household optical storage and charging integrated system based on SiC |
| CN117543959A (en) * | 2023-10-31 | 2024-02-09 | 南京威登等离子科技设备有限公司 | High-voltage plasma power supply with wide dynamic response |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201118531Y (en) * | 2007-10-18 | 2008-09-17 | 青岛海信电器股份有限公司 | External transformer driving circuit |
| CN101391340B (en) * | 2008-11-05 | 2012-01-25 | 江苏科技大学 | Air plasma cutting machine |
| CN203911762U (en) * | 2014-06-06 | 2014-10-29 | 华中科技大学 | LLC resonance converting device |
| JP2016025722A (en) * | 2014-07-18 | 2016-02-08 | 株式会社リコー | Inverter device |
| JP6340299B2 (en) * | 2014-10-17 | 2018-06-06 | ローム株式会社 | Switch driving circuit and switching power supply device using the same |
| CN206547018U (en) * | 2017-03-15 | 2017-10-10 | 泰科天润半导体科技（北京）有限公司 | A kind of charging module based on silicon carbide MOSFET |
| CN207368899U (en) * | 2017-10-26 | 2018-05-15 | 华南理工大学 | Full-bridge LLC mode of resonance plasma electrical sources based on SiC power devices |
-
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2018
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| ZA202002052B (en) | 2021-05-26 |
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