CN107686970A - Target and forming method thereof, target material assembly and forming method thereof - Google Patents
Target and forming method thereof, target material assembly and forming method thereof Download PDFInfo
- Publication number
- CN107686970A CN107686970A CN201610635420.6A CN201610635420A CN107686970A CN 107686970 A CN107686970 A CN 107686970A CN 201610635420 A CN201610635420 A CN 201610635420A CN 107686970 A CN107686970 A CN 107686970A
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- China
- Prior art keywords
- target
- groove
- sputter face
- field regions
- distance
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
A kind of target and forming method thereof, target material assembly and forming method thereof, wherein, target is used to be loaded into sputtering chamber, and target includes：Sputter face, the sputter face have some projections, have groove between adjacent protrusion；There are some first field regions and some second field regions, the magnetic field intensity of first field regions is more than the magnetic field intensity of the second adjacent field regions, and described raised for being placed in the first field regions, the groove is used to be placed in the second field regions in the sputtering chamber.The target causes the life-span of target to increase, while can improve the uniformity of target as sputter film forming.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of target and forming method thereof, target material assembly and its shape
Into method.
Background technology
Generally, the sputter face of the target in existing process is smooth plane.After target is used multiple times, the sputtering of target
Face is no longer plane, but forms multiple pits.This is due to the angle of energetic particle hits target material surface, frequency in sputter procedure
Rate and energy etc. are different and cause.When pit continues by energetic particle hits, it will cause target breakdown, therefore need
The target formed with deeper pit is changed in time.The target being replaced has been knocked portion of material, pit week in pit
The region on side there remains more target material.Therefore, the service life of target is shorter.
In order to improve the life-span of target, form of the existing many designs in the sputter face for changing target.But existing set
Meter is all the thickness of simple increase target.Although the thickness of increase target can extend the life-span of target, target is being used
The later stage that material is sputtered, the uniformity of spatter film forming are poor.
It is, therefore, desirable to provide the design in more optimal target as sputter face.
The content of the invention
The present invention is solved the problems, such as to be to provide a kind of target and forming method thereof, target material assembly and forming method thereof, carried
While the high target life-span, the uniformity of target as sputter film forming is improved.
To solve the above problems, the present invention provides a kind of target, for being loaded into sputtering chamber, including：Including：Sputtering
Face, the sputter face have some projections, have groove between adjacent protrusion；There are some first magnetic fields in the sputtering chamber
Area and some second field regions, the magnetic field intensity of first field regions are more than the magnetic field intensity of the second adjacent field regions, institute
State projection to be used to be placed in the first field regions, the groove is used to be placed in the second field regions.
Optionally, the central area of the sputter face is recessed relative to the fringe region of sputter face.
Optionally, the target is titanium target material.
Optionally, the target also has the first surface relative with sputter face；It is described for adjacent groove and projection
The lower surface of groove is less than the raised top surface to the distance of first surface to the distance of first surface.
The present invention also provides a kind of method for forming above-mentioned any target, and the target is used to be loaded into sputtering chamber
It is interior, including：Initial target is provided, the initial target has initial sputter face；The initial sputter face is machined,
The initial target is formed target, the initial sputter face is formed the sputter face of target, the sputter face has some convex
Rise, there is groove between adjacent protrusion；There are some first field regions and some second field regions in the sputtering chamber, it is described
The magnetic field intensity of first field regions is more than the magnetic field intensity of the second adjacent field regions, described raised for being placed in the first magnetic field
Area, the groove are used to be placed in the second field regions.
Optionally, the method for the machining includes：The initial sputter face is processed using turning process, shape
Into the sputter face, the sputter mask has the groove, and the projection is formed between adjacent grooves.
The present invention also provides a kind of target material assembly, including：Target as described in above-mentioned any one, the target also have
The first surface relative with sputter face；Backboard, there is groove, the groove accommodating portion target, first surface in the backboard
It is bonded with the bottom surface of groove.
Optionally, the backboard has relative second surface and the back side；The groove exposes second surface；It is described to splash
The raised top surface for penetrating face has the first distance to the back side；The first surface to the distance at the back side be the first distance
35.44%~38.33%.
Optionally, first distance is 17.14mm~17.40mm.
Optionally, the depth of the groove is 1.25mm~1.75mm.
The present invention also provides a kind of forming method of target material assembly, including：Target is formed, the target is using above-mentioned any
The forming method of one target is formed；Backboard is formed, there is groove in the backboard；The target is placed in groove, the
One surface is bonded with the bottom surface of groove.
Optionally, the backboard has relative second surface and the back side；The groove exposes second surface；It is described to splash
The raised top surface for penetrating face has the first distance to the back side；The first surface to the distance at the back side be the first distance
35.44%~38.33%.
Optionally, first distance is 17.14mm~17.40mm.
Optionally, the depth of the groove is 1.25mm~1.75mm.
Compared with prior art, technical scheme has advantages below：
Target provided by the invention, the magnetic field that the second adjacent field regions are more than due to the magnetic field intensity of the first field regions are strong
Degree, described raised for being placed in the first field regions, the groove is used to be placed in the second field regions, hence in so that magnetic field intensity is larger
The first field regions corresponding to sputter face have projection, sputter mask corresponding to the second weaker field regions of adjacent magnetic field intensity
It is fluted, therefore avoid sputter face and correspond to the stronger region of magnetic field intensity and correspond to the weaker area of magnetic field intensity relative to sputter face
The too early generation in domain is recessed.Therefore correspond to the stronger region of magnetic field intensity in sputtering later stage, sputter face and correspond to magnetic with respect to sputter face
Recessed degree caused by the weaker position of field intensity is smaller.So sputter face correspond to the weaker region of magnetic field intensity can be to sputter face
The obstruction degree in the stronger region of corresponding magnetic field intensity is smaller, so as to improve the uniformity of spatter film forming.
Further, since the uniformity of sputtering later stage spatter film forming can be improved, therefore without too early replacing target, target
For the time increase sputtered, so that the life-span increase of target.
The forming method of target provided by the invention, the initial sputter face is machined, forms sputter face, institute
Stating sputter face has some projections, has groove between adjacent protrusion, hence in so that the first field regions pair that magnetic field intensity is larger
For the sputter face answered with projection, sputter mask corresponding to the second weaker field regions of adjacent magnetic field intensity is fluted.So that target
The life-span increase of material, and the uniformity of spatter film forming can be improved.
Target material assembly provided by the invention, including above-mentioned target, hence in so that the life-span increase of target, and can improve and splash
Penetrate the uniformity of film forming.
The forming method of target material assembly provided by the invention, formed using the method for above-mentioned formation target so that target
Life-span increase, and the uniformity of spatter film forming can be improved.
Brief description of the drawings
Fig. 1 is the structural representation of target in one embodiment of the invention；
Fig. 2 is the schematic diagram that the present invention carries out turning to the initial sputter face of initial target；
Fig. 3 is the structural representation of target material assembly in another embodiment of the present invention.
Embodiment
As described in background, it is necessary to propose the design in more optimal target as sputter face.
Thickness by increasing target can extend the life-span of target, but in the later stage sputtered using target, splash
The uniformity for penetrating film forming is poor.
Found by research, reason is：Because the distribution of the magnetic field intensity in sputter procedure in sputtering chamber is different,
And the sputter face of target is plane, therefore with the progress of sputter procedure, sputter face meeting corresponding to the stronger region of magnetic field intensity
Too early formation pit.And the increase of the thickness with target, in the sputtering later stage, sputtered corresponding to the stronger region of magnetic field intensity
The depth increase for the pit that face is formed.Meanwhile the target material around pit causes larger obstruction to sputtering so that target splashes
Penetrating the uniformity of film forming reduces.
Based on how increase the life-span of target and improve the uniformity of target as sputter film forming, it is necessary to propose that one kind more optimizes
Target Design.
On this basis, the present invention provides a kind of target, for being loaded into sputtering chamber, including：Sputter face, it is described to splash
The face of penetrating has some projections, has groove between adjacent protrusion；The sputtering chamber is interior with some first field regions and some
Second field regions, the magnetic field intensity of first field regions are more than the magnetic field intensity of the second adjacent field regions, the raised use
In being placed in the first field regions, the groove is used to be placed in the second field regions.
It is described raised for putting because the magnetic field intensity of the first field regions is more than the magnetic field intensity of the second adjacent field regions
In the first field regions, the groove is used to be placed in the second field regions, hence in so that the first field regions correspondence that magnetic field intensity is larger
Sputter face have projection, sputter mask corresponding to the second weaker field regions of adjacent magnetic field intensity is fluted, therefore avoids
Sputter face corresponds to the stronger region of magnetic field intensity, and to correspond to the too early generation in the weaker region of magnetic field intensity relative to sputter face recessed
Enter.Therefore correspond to the stronger region of magnetic field intensity in sputtering later stage, sputter face and correspond to the weaker position of magnetic field intensity with respect to sputter face
Recessed degree caused by putting is smaller.So sputter face correspond to magnetic field intensity weaker region sputter face can be corresponded to magnetic field intensity compared with
The obstruction degree in strong region is smaller, so as to improve the uniformity of spatter film forming.Further, since the sputtering later stage can be improved
The uniformity of spatter film forming, therefore without too early replacing target, target is used for the time increase sputtered, so that target
The life-span increase of material.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 1 is the structural representation of target in one embodiment of the invention.
With reference to figure 1, target 100 has relative sputter face 110 and first surface 120, and the sputter face 110 has some
Projection 111, there is groove 112 between adjacent protrusion 111.
The target 100 is used to be loaded into sputtering chamber, carries out spatter film forming.
The target 100 can be titanium target material, copper target material, aluminium target or tantalum target.It should be noted that the target is also
It can be the target of other materials, no longer illustrate one by one.
The purity of the target 100 is more than 4N5.Specifically, the purity of the target 100 is 5N or 6N, wherein, 5N is represented
Purity is 99.999%, and 6N represents that purity is 99.9999%.
In the present embodiment, cylinder is shaped as example using the target 100.In other embodiments, target can
To select other shapes.
There is some first field regions and some second field regions, the magnetic field of first field regions in the sputtering chamber
Intensity is more than the magnetic field intensity of the second adjacent field regions.
Described raised 111 are used to be placed in the first field regions, and the groove 112 is used to be placed in the second field regions.
For adjacent groove 112 and projection 111, the distance of lower surface to the first surface 120 of the groove 112 is small
In the distance of raised 111 top surface to first surface 120.
In sputter procedure, the sputter face 110 that spatter film forming depends on target 100 corresponds to the stronger area of magnetic field intensity
Domain, the corresponding magnetic field intensity of sputter face 110 are larger compared with the degree that the region of strength is depleted.With the progress of sputter procedure, sputtering
The corresponding magnetic field intensity in face 110 is increasing relative to the loss at the corresponding weaker place of magnetic field intensity of sputter face 110 compared with the loss of strength.
In the sputtering later stage, the stronger position of the corresponding magnetic field intensity of sputter face 110 position weaker with respect to the corresponding magnetic field intensity of sputter face 110
Generation is recessed.It is larger that if recessed degree occurs, then the weaker region of the corresponding magnetic field intensity of sputter face 110 can be to sputter face
The stronger region of 110 corresponding magnetic field intensities causes to hinder, so as to reduce the uniformity of spatter film forming.
In the present embodiment, because the magnetic field intensity of the first field regions is more than the magnetic field intensity of the second adjacent field regions, institute
Stating sputter face 110 has some raised 111, has groove 112 between adjacent protrusion 111, and described raised 111 are used to be placed in first
Field regions, the groove 112 is used to be placed in the second field regions, hence in so that being splashed corresponding to larger the first field regions of magnetic field intensity
Penetrating face 110 has projection 111, and sputter face 110 has groove 112 corresponding to the second weaker field regions of adjacent magnetic field intensity.
Therefore the stronger region of the corresponding magnetic field intensity of sputter face 110 is avoided relative to the weaker area of the corresponding magnetic field intensity of sputter face 110
The too early generation in domain is recessed.Therefore in the sputtering later stage, sputter face 110 corresponds to the stronger region of magnetic field intensity with respect to sputter face 110
Recessed degree caused by the weaker position of corresponding magnetic field intensity is smaller.So weaker region of the corresponding magnetic field intensity of sputter face 110
The obstruction degree in region that can be stronger to the corresponding magnetic field intensity of sputter face 110 is smaller, so as to improve the uniform of spatter film forming
Property.
Further, it is contemplated that magnetic field intensity corresponding to the central area of sputter face 110 relative to sputter face 110 edge
Magnetic field intensity is weaker corresponding to region, and target 100 is designed as：The central area of sputter face 110 relative to sputter face 110 side
Edge area depression.Enable to produce relative to the central area of sputter face 110 in sputtering later stage, the fringe region of sputter face 110
Raw recessed degree is smaller.Further improve the uniformity of spatter film forming.
Further, since the uniformity of sputtering later stage spatter film forming can be improved, therefore without too early replacing target, target
For the time increase sputtered, so that the life-span increase of target.
Accordingly, the present embodiment also provides a kind of forming method of target, and the target is used to be loaded into sputtering chamber,
Including：Initial target is provided, the initial target has initial sputter face；The initial sputter face is machined, made
The initial target forms target, the initial sputter face is formed the sputter face of target, and the sputter face has some projections,
There is groove between adjacent protrusion；There are in the sputtering chamber some first field regions and some second field regions, described the
The magnetic field intensity of one field regions is more than the magnetic field intensity of the second adjacent field regions, described raised for being placed in the first field regions,
The groove is used to be placed in the second field regions.
The method of the machining is：The initial sputter face is processed using turning process, splashed described in formation
Face is penetrated, the sputter mask has the groove, the projection is formed between adjacent grooves.
With reference to figure 2, in turning process, initial target 10 is arranged on the main shaft of lathe, equipped with use on the lathe
In the cutter 130 of turning, the initial sputter face 11 of initial target 10 to be processed is towards cutter 130；Start lathe, the master of lathe
Axle drives the initial target 10 to be rotated around the axis of initial target 10, and cutter 130 is carried out in initial sputter face 11 according to setting
The program put is moved, and turning is carried out to initial sputter face 11.
Fig. 3 is the structural representation of target material assembly in another embodiment of the present invention.
With reference to figure 3, the target material assembly includes target 200 and backboard 300.
The material of the target 200, shape, material, shape, purity and the purposes of purity and purposes reference target 100, no
It is described in detail again.
The target 200 has relative a sputter face and first surface, and the sputter face has a projection, between adjacent protrusion
With groove.
The target 200 is used to be loaded into sputtering chamber, carries out spatter film forming.
There is some first field regions and some second field regions, the magnetic field of first field regions in the sputtering chamber
Intensity is more than the magnetic field intensity of the second adjacent field regions.
Described raised for being placed in the first field regions, the groove is used to be placed in the second field regions.
For adjacent groove and projection, the distance of the lower surface of the groove to first surface is less than described raised
Distance of the top surface to first surface.
Further, it is contemplated that magnetic field intensity corresponding to the central area of sputter face relative to sputter face fringe region pair
The magnetic field intensity answered is weaker, and target 200 is designed as：The central area of sputter face is recessed relative to the fringe region of sputter face.
The backboard 300 can be copper backboard or aluminium backboard.The material of the backboard can also select other materials.
The size of the backboard 300 needs specific design according to the size and actual magnetron sputtering apparatus of target 200.
The backboard 300 has relative second surface 310 and the back side 311.
There is groove, the groove exposes second surface 310, the groove accommodating portion target in the backboard 300
200, the first surface is bonded with the bottom surface of groove.
In order to ensure the uniformity of sputtering starting stage film forming in target zone, it is necessary to so that the top of sputter face protrusions
The distance in portion surface and film forming base station face selects optimal scope.
The raised top surface of the sputter face has the first distance to the back side 311.
In the case of one kind, the distance of first surface to the back side occupies the 35% of the first distance, accommodating portion target in backboard
The depth of groove be 1.2mm.However, in the case where the distance of first surface to the back side occupies the 35% of the first distance, it is recessed
The part that groove accommodates target is smaller.The space that the depth of groove is still improved, accordingly, ensureing first apart from constant situation
Under, space that the thickness of target is still improved.
Based on this, in one embodiment, ensureing first in the case of constant, by the depth down of groove, together
When the thickness of target 200 is deepened so that the distance of first surface to the back side 311 be the first distance 35.44%~
38.33%.So as to be effectively increased the service life of target 200, and backboard 300 is caused to accommodate target 200 to greatest extent.
In the present embodiment, first distance is 17.14mm~17.40mm, distance of the first surface to the back side 311
For the 35.44%~38.33% of the first distance, accordingly, the depth of the groove is 1.25mm~1.75mm.
Accordingly, the present embodiment also provides a kind of forming method of target material assembly, including：Target is formed, the target is adopted
Formed with the method for above-mentioned formation target；Backboard is formed, there is groove in the backboard；The target is placed in groove,
First surface is bonded with the bottom surface of groove.
Specifically, the backboard has relative second surface and the back side, the groove exposes second surface.It is described to splash
The raised top surface for penetrating face has the first distance to the back side；The first surface to the back side distance for the first distance
35.44%~38.33%.
Specifically, first distance is 17.14mm~17.40mm, the depth of the groove is 1.25mm~1.75mm.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (14)
- A kind of 1. target, for being loaded into sputtering chamber, it is characterised in that including：Sputter face, the sputter face have some projections, have groove between adjacent protrusion；There is some first field regions and some second field regions, the magnetic field intensity of first field regions in the sputtering chamber More than the magnetic field intensity of the second adjacent field regions, it is described it is raised be used to being placed in the first field regions, the groove is used to being placed in the Two field regions.
- 2. target according to claim 1, it is characterised in that the central area of the sputter face relative to sputter face side Edge area depression.
- 3. target according to claim 1, it is characterised in that the target is titanium target material.
- 4. target according to claim 1, it is characterised in that the target also has first table relative with sputter face Face；For adjacent groove and projection, the lower surface of the groove is less than the raised top to the distance of first surface Distance of the surface to first surface.
- 5. a kind of method for forming the target described in Claims 1-4 any one, the target is used to be loaded into sputtering chamber It is interior, it is characterised in that including：Initial target is provided, the initial target has initial sputter face；The initial sputter face is machined, the initial target is formed target, forms the initial sputter face The sputter face of target, the sputter face have some projections, have groove between adjacent protrusion；There is some first field regions and some second field regions, the magnetic field intensity of first field regions in the sputtering chamber More than the magnetic field intensity of the second adjacent field regions, it is described it is raised be used to being placed in the first field regions, the groove is used to being placed in the Two field regions.
- 6. the forming method of target according to claim 5, it is characterised in that the method for the machining includes：Adopt The initial sputter face is processed with turning process, forms the sputter face, the sputter mask has the groove, adjacent The projection is formed between groove.
- A kind of 7. target material assembly, it is characterised in that including：Target as described in Claims 1-4 any one, the target also have the first surface relative with sputter face；Backboard, there is groove, the groove accommodating portion target in the backboard, first surface is bonded with the bottom surface of groove.
- 8. target material assembly according to claim 7, it is characterised in that the backboard has relative second surface and the back of the body Face；The groove exposes second surface；The raised top surface of the sputter face has the first distance to the back side；Described The distance at one surface to the back side is the 35.44%~38.33% of the first distance.
- 9. target material assembly according to claim 8, it is characterised in that first distance is 17.14mm~17.40mm.
- 10. target material assembly according to claim 9, it is characterised in that the depth of the groove is 1.25mm~1.75mm.
- A kind of 11. forming method of target material assembly, it is characterised in that including：Target is formed, the target is formed using the method described in claim 5 or 6；Backboard is formed, there is groove in the backboard；The target is placed in groove, first surface is bonded with the bottom surface of groove.
- 12. the forming method of target material assembly according to claim 11, it is characterised in that the backboard has relative Two surfaces and the back side；The groove exposes second surface；The raised top surface of the sputter face has first to the back side Distance；The first surface to the back side distance be the first distance 35.44%~38.33%.
- 13. the forming method of target material assembly according to claim 12, it is characterised in that first distance is 17.14mm~17.40mm.
- 14. the forming method of target material assembly according to claim 13, it is characterised in that the depth of the groove is 1.25mm~1.75mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610635420.6A CN107686970A (en) | 2016-08-03 | 2016-08-03 | Target and forming method thereof, target material assembly and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610635420.6A CN107686970A (en) | 2016-08-03 | 2016-08-03 | Target and forming method thereof, target material assembly and forming method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN107686970A true CN107686970A (en) | 2018-02-13 |
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ID=61151682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610635420.6A Pending CN107686970A (en) | 2016-08-03 | 2016-08-03 | Target and forming method thereof, target material assembly and forming method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202157111U (en) * | 2011-06-02 | 2012-03-07 | 无锡华润上华半导体有限公司 | Target materials |
| CN202576553U (en) * | 2012-05-18 | 2012-12-05 | 宁波江丰电子材料有限公司 | Magnetron sputtering target material |
| CN102912301A (en) * | 2011-08-04 | 2013-02-06 | 无锡华润上华科技有限公司 | Sputtering target |
| CN203700498U (en) * | 2013-12-09 | 2014-07-09 | 有研亿金新材料股份有限公司 | Structure of high-performance sputtering target assembly |
| CN104513952A (en) * | 2013-09-30 | 2015-04-15 | 宁波江丰电子材料股份有限公司 | Manufacturing method of target material assembly and the target material assembly |
-
2016
- 2016-08-03 CN CN201610635420.6A patent/CN107686970A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202157111U (en) * | 2011-06-02 | 2012-03-07 | 无锡华润上华半导体有限公司 | Target materials |
| CN102912301A (en) * | 2011-08-04 | 2013-02-06 | 无锡华润上华科技有限公司 | Sputtering target |
| CN202576553U (en) * | 2012-05-18 | 2012-12-05 | 宁波江丰电子材料有限公司 | Magnetron sputtering target material |
| CN104513952A (en) * | 2013-09-30 | 2015-04-15 | 宁波江丰电子材料股份有限公司 | Manufacturing method of target material assembly and the target material assembly |
| CN203700498U (en) * | 2013-12-09 | 2014-07-09 | 有研亿金新材料股份有限公司 | Structure of high-performance sputtering target assembly |
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Application publication date: 20180213 |