CN108220891A - Long-life target material assembly and forming method thereof - Google Patents

Long-life target material assembly and forming method thereof Download PDF

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Publication number
CN108220891A
CN108220891A CN201611153514.6A CN201611153514A CN108220891A CN 108220891 A CN108220891 A CN 108220891A CN 201611153514 A CN201611153514 A CN 201611153514A CN 108220891 A CN108220891 A CN 108220891A
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China
Prior art keywords
target
distance
backboard
conformable region
material assembly
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CN201611153514.6A
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Inventor
姚力军
潘杰
相原俊夫
王学泽
刘霞
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Ningbo Jiangfeng Electronic Material Co Ltd
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Ningbo Jiangfeng Electronic Material Co Ltd
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Priority to CN201611153514.6A priority Critical patent/CN108220891A/en
Publication of CN108220891A publication Critical patent/CN108220891A/en
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A kind of long-life target material assembly and forming method thereof, wherein target material assembly includes:Target, the target have opposite sputter face and first surface, and the sputter face is plane, and the sputter face to first surface has the first distance;Backboard, the backboard has opposite second surface and the back side, the backboard includes conformable region, the second surface and first surface of the conformable region fit, the sum of the distance of conformable region second surface to distance and sputter face to the first surface at the back side is second distance, the second distance has preset value, and first distance is the 25.5%~99.5% of second distance.The target material assembly causes the service life of target to increase, and the use difficulty of target material assembly and cost of manufacture is made to reduce.

Description

Long-life target material assembly and forming method thereof
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of long-life target material assembly and forming method thereof.
Background technology
In general, the sputter face of the target in prior art is smooth plane.After target is used repeatedly, the sputtering of target Face is no longer plane, but forms multiple pits.This is because the angle of energetic particle hits target material surface, frequency in sputtering process Rate and energy etc. are different and cause.When pit continues by energetic particle hits, it will cause target breakdown, therefore need The target for being formed with deeper pit is replaced in time.The target being replaced has been knocked portion of material, pit week in pit The region on side there remains more target material.Therefore, the service life of target is shorter.
In order to improve the service life of target, there are many forms designed in the sputter face for changing target.Such as:By target Sputter face be set as height rise and fall surface.
However, the target performance of the prior art is still to be improved.
Invention content
The present invention solves the problems, such as to be to provide a kind of long-life target material assembly and forming method thereof, to improve the use of target Service life, and reduce the use difficulty and cost of manufacture of target material assembly.
To solve the above problems, the present invention provides a kind of long-life target material assembly, including:Target, the target have phase To sputter face and first surface, the sputter face be plane, the sputter face to first surface is with the first distance;Backboard, The backboard has opposite second surface and the back side, and the backboard includes conformable region, the second surface of the conformable region and the One surface fits, the sum of the distance of the distance of conformable region second surface to the back side and sputter face to first surface be second away from From the second distance has preset value, and first distance is the 25.5%~99.5% of second distance.
Optionally, the preset value is 20mm~30mm.
Optionally, the preset value is 25.4mm.
Optionally, first distance is 6.477mm~25.273mm.
Optionally, the target includes tantalum target.
Optionally, the backboard further includes the marginal zone around conformable region;The second surface protrusion of the conformable region Second surface in the marginal zone.
Optionally, there is groove, the bottom surface of the groove is portion second surface, described in the conformable region backboard Groove is used to accommodate target.
The present invention also provides a kind of forming method of long-life target material assembly, including:Target is formed, the target has phase To sputter face and first surface, the sputter face be plane, the sputter face to first surface is with the first distance;Form the back of the body Plate, the backboard have opposite second surface and the back side, and the backboard includes conformable region, and conformable region second surface arrives the back side The sum of the distance of distance and sputter face to first surface is second distance, and the second distance has a preset value, described first away from From 25.5%~99.5% for second distance;First surface and conformable region second surface are bonded.
Optionally, the preset value is 20mm~30mm.
Optionally, the preset value is 25.4mm.
Optionally, first distance is 6.477mm~25.273mm.
Optionally, the target includes tantalum target.
Optionally, the backboard further includes the marginal zone around conformable region;The second surface protrusion of the conformable region Second surface in the marginal zone;The method that the first surface and conformable region second surface are bonded is included:By the first table Behind face and the contact of conformable region second surface, the target and backboard are welded together.
Optionally, there is groove, the bottom surface of the groove is portion second surface in the conformable region backboard;By institute The method for stating first surface and the fitting of conformable region second surface includes:The target is placed in the groove, first table Face and the bottom surface contact of groove;After the target is placed in the groove, the target and backboard are welded together.
Compared with prior art, technical scheme of the present invention has the following advantages:
Technical solution of the present invention provide long-life target material assembly in, due to the sputter face be plane, the surface of target Pattern is simple, and there is no need to the surface topographies to target to carry out complicated mechanical processing so that the cost of manufacture of target reduces.Its Secondary, the second distance has preset value, and when the preset value determines, i.e., second distance is fixed.So that by the target group After part is mounted in sputtering chamber, without readjusting structural parameters in sputtering chamber, can make the sputter face of target into The distance on film base station surface is to meet the uniformity of the film forming at sputtering initial stage, so as to reduce the use difficulty of target.Again, institute When stating second distance with preset value, first distance is the 25.5%~99.5% of second distance so that thickness phase It is larger for the thickness of conformable region backboard, thickness is enabled to increase, the sputtering initial uniformity can met In the case of so that the service life of target is effectively increased.
In the forming method for the long-life target material assembly that technical solution of the present invention provides, target is formed, the target splashes Face is penetrated as plane, the surface topography of target is simple, and there is no need to the surface topographies to target to carry out complicated mechanical processing so that The cost of manufacture of target reduces.Secondly, the second distance has preset value, when the preset value determines, i.e. second distance It is fixed.So that after the target material assembly is mounted in sputtering chamber, it, can without readjusting structural parameters in sputtering chamber Enough make the sputter face of target to the distance on film forming base station surface to meet the uniformity of the film forming at sputtering initial stage, so as to reduce target The use difficulty of material.Again, the second distance have preset value when, it is described first distance for second distance 25.5%~ 99.5% so that thickness is larger relative to the thickness of conformable region backboard, and thickness is enabled to increase, and can meet In the case of sputtering the initial uniformity so that the service life of target is effectively increased.
Description of the drawings
Fig. 1 is a kind of structure diagram of target material assembly;
Fig. 2 to Fig. 4 is the structure diagram of long-life target material assembly forming process in one embodiment of the invention;
Fig. 5 to Fig. 7 is the structure diagram of long-life target material assembly forming process in another embodiment of the present invention.
Specific embodiment
As described in background, the target performance of the prior art is still to be improved.
Fig. 1 is a kind of structure diagram of target material assembly, and target material assembly includes:Target 100, the target 100 have phase To sputter face 101 and first surface 102, the sputter face 101 to first surface 102 have the first distance;Backboard 200, institute Backboard 200 is stated with opposite second surface 201 and the back side 202, the backboard 200 includes conformable region, the second table of conformable region Face 201 protrudes from the second surface 201 of marginal zone.
The service life of target 100 can be extended by the thickness for increasing target 100, but target 100 is being used to be sputtered Later stage, the uniformity of spatter film forming is poor, and then needs replacing target 100, thus improve 100 service life of target degree compared with It is small.
In addition, gas flow that the sputtering parameter such as sputtering power, strong chamber pressure and sputtering in sputtering chamber use etc. In the case of determining, the distance of film forming basal plane is excessive or too small in the sputter face 101 to sputtering chamber of target 100, can all cause The uniformity that target 100 forms a film at sputtering initial stage in film forming basal plane.And in the case where increasing the thickness of target 100 merely, Target 100 is placed in sputtering chamber in use, the distance meeting for the basal plane that forms a film in the sputter face 101 to sputtering chamber of target 100 Reduce, so as to reduce the uniformity of the film forming at sputtering initial stage.Therefore usually the increased target 100 of thickness is placed in sputtering chamber Afterwards, it needs to readjust the sputter face 101 of target 100 and the distance of film forming basal plane to meet the uniform of the film forming at sputtering initial stage Degree, leads to the use difficulty of target 100 to increase.
In order to improve target using the uniformity that the later stage forms a film to further improve the service life of target, by the sputtering Face is set as:Sputter face has several protrusions and the groove between protrusion.The target is used to be placed in sputtering chamber.Institute Protrusion is stated for being placed in the larger region of magnetic field intensity in sputtering chamber, groove is smaller for being placed in magnetic field intensity in sputtering chamber Region.
During carrying out sputtering technology using above-mentioned target, the decline of the sputtering later stage film forming uniformity can be avoided, because This is without premature replacement target, and target increases for the time of sputtering, so that the service life of target further increases.So And due to needing to form the sputter face just to rise and fall, it is therefore desirable to additional technique is machined the sputter face of target, Lead to the cost of manufacture of target to increase.
On this basis, the present invention provides a kind of forming method of long-life target material assembly, including:Target is formed, it is described Target has opposite sputter face and first surface, and the sputter face is plane, and the sputter face to first surface has first Distance;Backboard is formed, the backboard has opposite second surface and the back side, and the backboard includes conformable region, conformable region second Surface is second distance to the distance at the back side and the sum of the distance of sputter face to first surface, and the second distance has default Value, first distance is the 25.5%~99.5% of second distance;First surface and conformable region second surface are bonded.
In the method, target is formed, the sputter face of the target is plane, and the surface topography of target is simple, therefore nothing Complicated mechanical processing need to be carried out to the surface topography of target so that the cost of manufacture of target reduces.Secondly, the second distance With preset value, when the second distance is set as determining preset value, second distance can remain fixed.Due to that can protect Card second distance is fixed so that after the target material assembly is mounted in sputtering chamber, is tied without readjusting in sputtering chamber Structure parameter so that target sputter face to film forming base station surface distance to meet the uniformity of the film forming at sputtering initial stage, so as to drop The low use difficulty of target.Again, when the second distance has preset value, first distance is second distance 25.5%~99.5% so that thickness is larger relative to the thickness of conformable region backboard, and thickness is enabled to increase.By Increase in the thickness of target, and meet the uniformity of sputtering initial so that the service life of target is effectively increased.
It is understandable for the above objects, features and advantages of the present invention is enable to become apparent, below in conjunction with the accompanying drawings to the present invention Specific embodiment be described in detail.
Fig. 2 to Fig. 4 is the structure diagram of long-life target material assembly forming process in one embodiment of the invention.
With reference to figure 2, target 300 is provided.
The target 300 can be tantalum target, titanium target material, aluminium target or copper target material.It should be noted that the target is also It can be the target of other materials, no longer illustrate one by one.In the present embodiment, the target 300 is tantalum target.
The purity of the target 300 is in more than 4N5.Specifically, the purity of the target 300 is 5N or 6N, wherein 5N tables It is that 99.999%, 6N represents that purity is 99.9999% to show purity.
It is cylinder as example using the shape of the target 300 in the present embodiment.In other embodiments, target can To select other shapes.
The target 300 has opposite sputter face 301 and first surface 302, and the sputter face 301 is plane, described Sputter face 301 has the first distance H1 to first surface 302.
Since the sputter face 301 is plane, the surface topography of target 300 is simple, and there is no need to the surfaces to target 300 Pattern carries out complicated mechanical processing so that the cost of manufacture of target 300 reduces.
With reference to figure 3, backboard 400 is provided.
The backboard 400 can be copper backboard or aluminium backboard.The material of the backboard 400 can also select other materials Material.
The size of the backboard 400 is specifically set according to the size of target 300 and the needs of practical magnetron sputtering apparatus Meter.
The backboard 400 has opposite second surface 401 and the back side 402, and the backboard 400 includes conformable region and is located at Marginal zone around conformable region.The second surface 401 and first surface 302 of the conformable region fit.
In the present embodiment, also there is groove 403, the bottom surface of the groove 403 is portion in the conformable region backboard 400 Divide second surface 401, the groove 403 is used to accommodate target 300.
The groove 403 is for accommodating portion or whole targets 300.
The conformable region second surface 401 to the back side 402 distance and sputter face 301 to first surface 302 distance it With for second distance, the second distance has preset value.
The target material assembly is mounted on sputtering by the uniformity in order to ensure to sputter starting stage film forming in target zone After in chamber, it is required that the distance on sputter face 301 to film forming base station surface selects optimal range, therefore the second distance With preset value.For same sputtering chamber, the preset value is fixed value.And for different sputtering chambers, it is described pre- If value can be identical or different.
When the preset value determines, second distance is fixed.So that after the target material assembly is mounted in sputtering chamber, Structural parameters in sputtering chamber need not be readjusted, the sputter face 301 of target 300 can be made to the distance on film forming base station surface With meet sputtering initial stage film forming the uniformity, therefore reduce the use difficulty of target 300.
In the present embodiment, ranging from 20mm~30mm of the preset value.In other embodiments, the preset value energy root It is determined according to sputtering chamber and uses other numerical value.
In one embodiment, the preset value is 25.4mm.
In the present embodiment, ranging from 20mm~30mm of the preset value.In other embodiments, the preset value energy root It is determined according to sputtering chamber and uses other numerical value.
In one case, the first distance H1 is the 25% of second distance.However, it is second distance in the first distance H1 In the case of 25%, the part that groove 403 accommodates target 300 is smaller.The space that the depth of groove 403 is still improved, correspondingly, In the space for ensureing that second distance is fixed, and the thickness of target 300 is still improved.
Based on this, in one embodiment, ensureing that second distance is fixed, the backboard 400 of conformable region is thick Degree reduces, while increases the thickness of target 300, specifically, the first distance H1 is the 25.5%~99.5% of second distance.Due to Fixed in card second distance, the thickness of target 300 increases, therefore can meet the sputtering initial uniformity In the case of so that the service life of target 300 is effectively increased.
In the present embodiment, the first distance H1 is the 25.5%~99.5% of second distance.The meaning of this range is selected to be: If the first distance H1 occupies second distance ratio more than 99.5%, the thickness for leading to the backboard 400 of conformable region is too small, reduces patch Close the enabling capabilities of the backboard 400 in area;If the first distance H1 occupies second distance ratio less than 25.5%, cause target 300 thick Spend that increased degree is relatively low, correspondingly, the degree for extending 300 service life of target is relatively low.
In the present embodiment, when the preset value is 25.4mm, the second distance H2 is 25.4mm, correspondingly, described First distance H1 is 6.477mm~25.273mm.
With reference to figure 4, first surface 302 and conformable region second surface 401 are bonded.
The method that the first surface 302 and conformable region second surface 401 are bonded is included:The target 300 is placed in In the groove 403, the bottom surface contact of the first surface 302 and groove 403;The target 300 is placed in described recessed After in slot 403, the target 300 and backboard 400 are welded together.
The technique that the target 300 and backboard 400 weld together is included into hot isostatic press welding technique.
After the first surface 302 and conformable region second surface 401 are bonded, the target 300 and backboard 400 form target Material component.The target material assembly carries out spatter film forming for loading in sputtering chamber, passing through target 300.
Correspondingly, the present embodiment also provides a kind of long-life target material assembly, please refer to Fig.4, target 300, the target 300 With opposite sputter face 301 and first surface 302, the sputter face 301 is plane, and the sputter face 301 arrives first surface 302 have the first distance H1;Backboard 400, the backboard 400 have opposite second surface 401 and the back side 402, the backboard 400 include conformable region, and the second surface 401 and first surface 302 of the conformable region fit, and conformable region second surface 401 arrives The sum of the distance of the distance at the back side 402 and sputter face 301 to first surface 302 is second distance H2, the second distance H2 tools There is preset value, the first distance H1 is the 25.5%~99.5% of second distance H2.
The backboard 400 includes conformable region and the marginal zone around conformable region.Have in the conformable region backboard 400 Groove 403 (with reference to figure 3), the bottom surface of the groove 403 is portion second surface 401, and the groove 403 is used to accommodate target Material 300.
The preset value is 20mm~30mm.
In one embodiment, the preset value is 25.4mm.
In the present embodiment, when the preset value is 25.4mm, the second distance H2 is 25.4mm, correspondingly, described First distance H1 is 6.477mm~25.273mm.
Another embodiment of the present invention also provides the area of a kind of forming method of target material assembly, the present embodiment and previous embodiment It is not:In the backboard of formation, the second surface of conformable region protrudes from the second surface of the marginal zone.It closes in this present embodiment The something in common of target material assembly, is no longer described in detail in the forming method and previous embodiment of target material assembly.
Fig. 5 to Fig. 7 is the structure diagram of long-life target material assembly forming process in another embodiment of the present invention.
With reference to figure 5, target 500 is provided.
The material of the target 500, purity and shape with reference to target 300 (with reference to figure 2) material, purity and shape, no It is described in detail again.
The target 500 has opposite sputter face 501 and first surface 502, and the sputter face 501 is plane, described Sputter face 501 has the first distance H3 to first surface 502.
With reference to figure 6, backboard 600 is provided.
The material of the backboard 600 is with reference to the material of backboard 400 (with reference to figure 3).
The backboard 600 has opposite second surface 601 and the back side 602, and the backboard 600 includes conformable region and is located at Marginal zone around conformable region.
The second surface 601 of conformable region protrudes from the second surface 601 of the marginal zone.
The conformable region second surface 601 to the back side 602 distance and sputter face 501 to first surface 502 distance it With for second distance, the second distance has preset value.
In the present embodiment, ranging from 20mm~30mm of the preset value.In other embodiments, the preset value energy root It is determined according to sputtering chamber and uses other numerical value.
In one embodiment, the preset value is 25.4mm.
First distance is the 25.5%~99.5% of second distance.
In the present embodiment, when the preset value is 25.4mm, the second distance is 25.4mm, correspondingly, described the One distance H1 is 6.477mm~25.273mm.
With reference to figure 7, first surface 502 and conformable region second surface 601 are bonded.
The method that the first surface 502 and conformable region second surface 601 are bonded is included:By first surface 502 and patch After closing the contact of area's second surface 601, the target 500 and backboard 600 are welded together.
The technique that the target 500 and backboard 600 weld together is included into hot isostatic press welding technique.
After the first surface 502 and conformable region second surface 601 are bonded, the target 500 and backboard 600 form target Material component.The target material assembly carries out spatter film forming for loading in sputtering chamber, passing through target 500.
Correspondingly, the present embodiment also provides a kind of long-life target material assembly, Fig. 7, target 500, the target 500 are please referred to With opposite sputter face 501 and first surface 502, the sputter face 501 is plane, and the sputter face 501 arrives first surface 502 have the first distance H3;Backboard 600, the backboard 600 have opposite second surface 601 and the back side 602, the backboard 600 include conformable region, and the second surface 601 and first surface 502 of the conformable region fit, and conformable region second surface 601 arrives The sum of the distance of the distance at the back side 602 and sputter face 501 to first surface 502 is second distance H4, the second distance H4 tools There is preset value, the first distance H3 is the 25.5%~99.5% of second distance H4.
The backboard 600 includes conformable region and the marginal zone around conformable region.
The second surface 601 of conformable region protrudes from the second surface 601 of the marginal zone.
In the present embodiment, ranging from 20mm~30mm of the preset value.In other embodiments, the preset value energy root It is determined according to sputtering chamber and uses other numerical value.
In one embodiment, the preset value is 25.4mm.
In the present embodiment, when the preset value is 25.4mm, the second distance H4 is 25.4mm, correspondingly, described First distance H3 is 6.477mm~25.273mm.
In summary:
In long-life target material assembly provided in an embodiment of the present invention, due to the sputter face be plane, the surface shape of target Looks are simple, and there is no need to the surface topographies to target to carry out complicated mechanical processing so that the cost of manufacture of target reduces.Its Secondary, the second distance has preset value, and when the preset value determines, i.e., second distance is fixed.So that by the target group After part is mounted in sputtering chamber, without readjusting structural parameters in sputtering chamber, can make the sputter face of target into The distance on film base station surface is to meet the uniformity of the film forming at sputtering initial stage, so as to reduce the use difficulty of target.Again, institute When stating second distance with preset value, first distance is the 25.5%~99.5% of second distance so that thickness phase It is larger for the thickness of conformable region backboard, thickness is enabled to increase, the sputtering initial uniformity can met In the case of so that the service life of target is effectively increased.
In the forming method of long-life target material assembly provided in an embodiment of the present invention, target, the sputtering of the target are formed Face is plane, and the surface topography of target is simple, and there is no need to the surface topographies to target to carry out complicated mechanical processing so that target The cost of manufacture of material reduces.Secondly, the second distance has preset value, and when the preset value determines, i.e., second distance is consolidated It is fixed.So that after the target material assembly is mounted in sputtering chamber, it, can without readjusting structural parameters in sputtering chamber Make the sputter face of target to the distance on film forming base station surface to meet the uniformity of the film forming at sputtering initial stage, so as to reduce target Use difficulty.Again, the second distance have preset value when, it is described first distance for second distance 25.5%~ 99.5% so that thickness is larger relative to the thickness of conformable region backboard, and thickness is enabled to increase, and can meet In the case of sputtering the initial uniformity so that the service life of target is effectively increased.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute Subject to the range of restriction.

Claims (14)

1. a kind of long-life target material assembly, which is characterized in that including:
Target, the target have opposite sputter face and first surface, the sputter face be plane, the sputter face to first Surface has the first distance;
Backboard, the backboard have opposite second surface and the back side, the backboard include conformable region, the second of the conformable region Surface and first surface fit, and the sum of the distance of the distance and sputter face to first surface of conformable region second surface to the back side is Second distance, the second distance have preset value, and first distance is the 25.5%~99.5% of second distance.
2. long-life target material assembly according to claim 1, which is characterized in that the preset value is 20mm~30mm.
3. long-life target material assembly according to claim 2, which is characterized in that the preset value is 25.4mm.
4. long-life target material assembly according to claim 3, which is characterized in that it is described first distance for 6.477mm~ 25.273mm。
5. long-life target material assembly according to claim 1, which is characterized in that the target includes tantalum target.
6. long-life target material assembly according to claim 1, which is characterized in that the backboard was further included positioned at conformable region week The marginal zone enclosed;The second surface of the conformable region protrudes from the second surface of the marginal zone.
7. long-life target material assembly according to claim 1, which is characterized in that there is groove in the conformable region backboard, The bottom surface of the groove is portion second surface, and the groove is used to accommodate target.
8. a kind of forming method of long-life target material assembly, which is characterized in that including:
Target is formed, the target has opposite sputter face and first surface, and the sputter face is plane, and the sputter face arrives First surface has the first distance;
Backboard is formed, the backboard has opposite second surface and the back side, and the backboard includes conformable region, the second table of conformable region Face is second distance to the distance at the back side and the sum of the distance of sputter face to first surface, and the second distance has preset value, First distance is the 25.5%~99.5% of second distance;
First surface and conformable region second surface are bonded.
9. the forming method of long-life target material assembly according to claim 8, which is characterized in that the preset value is 20mm ~30mm.
10. the forming method of long-life target material assembly according to claim 9, which is characterized in that the preset value is 25.4mm。
11. the forming method of long-life target material assembly according to claim 10, which is characterized in that first distance is 6.477mm~25.273mm.
12. the forming method of long-life target material assembly according to claim 8, which is characterized in that the target includes tantalum Target.
13. the forming method of long-life target material assembly according to claim 8, which is characterized in that the backboard further includes Marginal zone around conformable region;The second surface of the conformable region protrudes from the second surface of the marginal zone;By described in First surface and the method for conformable region second surface fitting include:After first surface and the contact of conformable region second surface, by institute It states target and backboard welds together.
14. the forming method of long-life target material assembly according to claim 8, which is characterized in that the conformable region backboard In there is groove, the bottom surface of the groove is portion second surface;The first surface and conformable region second surface are pasted The method of conjunction includes:The target is placed in the groove, the bottom surface contact of the first surface and groove;By described in After target is placed in the groove, the target and backboard are welded together.
CN201611153514.6A 2016-12-14 2016-12-14 Long-life target material assembly and forming method thereof Pending CN108220891A (en)

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* Cited by examiner, † Cited by third party
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CN110977133A (en) * 2019-12-25 2020-04-10 宁波江丰电子材料股份有限公司 Diffusion welding method for ultrahigh-purity copper target
CN111001920A (en) * 2019-12-25 2020-04-14 宁波江丰电子材料股份有限公司 Hot isostatic pressing diffusion welding method
CN111195757A (en) * 2020-02-25 2020-05-26 宁波江丰电子材料股份有限公司 Brazing method for tantalum target and copper back plate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101648308A (en) * 2009-05-08 2010-02-17 宁波江丰电子材料有限公司 Manufacturing method of target material assembly
CN104419907A (en) * 2013-09-11 2015-03-18 宁波江丰电子材料股份有限公司 Target material component and formation method thereof
CN204325482U (en) * 2014-12-22 2015-05-13 有研亿金新材料有限公司 The tie-in module of a kind of sputtering target material and backboard
WO2016017432A1 (en) * 2014-07-31 2016-02-04 Jx日鉱日石金属株式会社 BACKING PLATE WITH DIFFUSION BONDING OF ANTICORROSIVE METAL AND Mo OR Mo ALLOY AND SPUTTERING TARGET-BACKING PLATE ASSEMBLY PROVIDED WITH SAID BACKING PLATE

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101648308A (en) * 2009-05-08 2010-02-17 宁波江丰电子材料有限公司 Manufacturing method of target material assembly
CN104419907A (en) * 2013-09-11 2015-03-18 宁波江丰电子材料股份有限公司 Target material component and formation method thereof
WO2016017432A1 (en) * 2014-07-31 2016-02-04 Jx日鉱日石金属株式会社 BACKING PLATE WITH DIFFUSION BONDING OF ANTICORROSIVE METAL AND Mo OR Mo ALLOY AND SPUTTERING TARGET-BACKING PLATE ASSEMBLY PROVIDED WITH SAID BACKING PLATE
CN204325482U (en) * 2014-12-22 2015-05-13 有研亿金新材料有限公司 The tie-in module of a kind of sputtering target material and backboard

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110977133A (en) * 2019-12-25 2020-04-10 宁波江丰电子材料股份有限公司 Diffusion welding method for ultrahigh-purity copper target
CN111001920A (en) * 2019-12-25 2020-04-14 宁波江丰电子材料股份有限公司 Hot isostatic pressing diffusion welding method
CN111195757A (en) * 2020-02-25 2020-05-26 宁波江丰电子材料股份有限公司 Brazing method for tantalum target and copper back plate

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Application publication date: 20180629