CN107681026B - A kind of light emitting diode and preparation method thereof - Google Patents
A kind of light emitting diode and preparation method thereof Download PDFInfo
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- CN107681026B CN107681026B CN201710874072.2A CN201710874072A CN107681026B CN 107681026 B CN107681026 B CN 107681026B CN 201710874072 A CN201710874072 A CN 201710874072A CN 107681026 B CN107681026 B CN 107681026B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims description 67
- 210000004027 cell Anatomy 0.000 claims description 13
- 230000005611 electricity Effects 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 27
- 238000000605 extraction Methods 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 260
- 238000010586 diagram Methods 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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Abstract
This application discloses a kind of light emitting diodes and preparation method thereof, wherein, the light emitting diode is in extension body structure surface by way of setting heavy doping second type current extending, multiple current barrier layers and transparency conducting layer, the comparable current path of multiple resistance sizes is formed in the transparent conductive layer, to realize the purpose of the three-dimensional current expansion of light emitting diode, the current expansion effect of light emitting diode is improved；And since the heavy doping second type current extending and multiple current barrier layers assist the transparency conducting layer to constitute the comparable current path of multiple resistance sizes, so that no setting is required thicker preferable current expansion effect also may be implemented for the thickness of the transparency conducting layer, to realize under the premise of not absorbing the emergent ray of excessive light emitting diode, the purpose of good current expansion effect is provided for light emitting diode, and then reach promotion quantum efficiency of light emitting dio, the purpose of the final light extraction efficiency for improving light emitting diode.
Description
Technical field
This application involves technical field of semiconductors, more specifically to a kind of light emitting diode and preparation method thereof.
Background technique
Light emitting diode (Light Emitting Diode, LED), also referred to as electroluminescent diode, are the core of LED light
Heart component.With the fast development of LED technology, light emitting diode in each field using more and more extensive.
How to improve the luminous efficiency of light emitting diode is a timeless topic in light emitting diode research process,
The approach of the luminous efficiency of the raising light emitting diode of mainstream mainly includes the extraction for improving inside and outside quantum efficiency and improving light now
Take the approach such as rate.It was discovered by researchers that light emitting diode can be effectively improved by improving the extension effect of electric current in light emitting diode
Quantum efficiency, to promote the luminous efficiency of light emitting diode.
Raising light-emitting diodes usually are realized by the way that layer of transparent conductive layer is arranged in extension body structure surface in the prior art
The purpose of current expansion effect in pipe, but due to the light transmittance of the transparent conductive material of mainstream, such as tin indium oxide (ITO) etc.
Not 100%, blocked up transparency conducting layer can absorb the emergent ray of more light emitting diode, be difficult to reach raising instead and shine
The purpose of the light extraction efficiency of diode；And the current expansion effect of excessively thin transparency conducting layer is poor, it is difficult to play promotion hair
The purpose of the quantum efficiency of optical diode, will lead to instead light emitting diode operating voltage increase the problem of.
Summary of the invention
In order to solve the above technical problems, the present invention provides a kind of light emitting diode and preparation method thereof, to realize not
Under the premise of the emergent ray for absorbing excessive light emitting diode, the mesh of good current expansion effect is provided for light emitting diode
, thus reach promotion quantum efficiency of light emitting dio, the purpose of the final light extraction efficiency for improving light emitting diode.
To realize the above-mentioned technical purpose, the embodiment of the invention provides following technical solutions:
A kind of light emitting diode, comprising:
Substrate；
Positioned at the epitaxial structure of the substrate surface, the epitaxial structure includes at least the first type limiting layer, active area, the
Two type limiting layers and second type current extending；
Deviate from the first electrode on the epitaxial structure surface positioned at the substrate；
Positioned at the heavy doping second type current extending of the second type current expansion layer surface, the heavy doping second type
The doping concentration of current extending is greater than the doping concentration of the second type current extending；
The heavy doping second type current extending includes multiple extension layer units, multiple first kind grooves and one second
Class groove, the multiple first kind groove and a second class groove are distributed between the adjacent extension layer unit, and described
A kind of groove exposes the second type current extending, and the second class groove exposes the second type current extending
Electrode zone；
The current barrier layer of extension layer unit positioned at the second class bottom portion of groove and close to the second class groove；
It covers the heavy doping second type current extending, second type current extending exposed surface and is located at extension layer
The transparency conducting layer of the current blocking layer surface of cell surface；
Covering be located at the second class bottom portion of groove current blocking layer surface and partially transparent conductive layer surface the
Two electrodes.
Optionally, the value range of the doping concentration of the second type current extending is 1017cm-3-5×1018cm-3, packet
Include endpoint value；
The value range of the doping concentration of the heavy doping second type current extending is 5 × 1018cm-3-1020cm-3, packet
Include endpoint value.
Optionally, the width of the first kind groove is not less than the width of the second class groove.
A kind of preparation method of light emitting diode, comprising:
Substrate is provided, substrate surface growth has an epitaxial structure, the epitaxial structure include at least the first type limiting layer,
Active area, second type limiting layer and second type current extending；
Heavy doping second type current extending is grown on the epitaxial structure surface, and to the heavy doping second type electric current
Extension layer performs etching, the multiple extension layer units of formation, multiple first kind grooves and a second class groove, and the multiple first
Class groove and a second class groove are distributed between the adjacent extension layer unit, and the first kind groove exposes described
Two type current extendings, the second class groove expose the electrode zone of the second type current extending；
Form the electricity for covering the second class bottom portion of groove and the extension layer cell surface close to the second class groove
Flow barrier；
It is covering the heavy doping second type current extending, second type current extending exposed surface and is being located at extension
Layer unit surface grows transparency conducting layer；
Covering is located at the current blocking layer surface of the second class bottom portion of groove and partially transparent conductive layer surface forms the
Two electrodes；
First electrode is formed away from one side surface of epitaxial structure in the substrate.
Optionally, the value range of the doping concentration of the second type current extending is 1017cm-3-5×1018cm-3, packet
Include endpoint value；
The value range of the doping concentration of the heavy doping second type current extending is 5 × 1018cm-3-1020cm-3, packet
Include endpoint value.
A kind of light emitting diode, comprising:
Substrate；
Positioned at the epitaxial structure of the substrate surface, the epitaxial structure is included at least: the first type conductive layer, active area and
Second type conductive layer, the first type conductive layer have stack region and electrode district；
Positioned at the ohmic contact layer of the second type conductive layer surface, the ohmic contact layer is in the first type conductive layer
The projection section on surface covers the stack region；The ohmic contact layer includes two contact layer units and a groove, described
Groove is located between two contact layer units, and exposes the second type conductive layer；
First electrode positioned at the first type conducting layer electrode area surface, the first electrode is towards the epitaxial structure
One side surface has separation layer；
Second electrode positioned at the ohmic contact layer far from the first electrode side, the second electrode and described the
There is the first current barrier layer between two type conductive layers；
Contact layer cell surface close to the second electrode has the second current barrier layer；
Cover the electrically conducting transparent of second current barrier layer, the ohmic contact layer and second type conductive layer exposed surface
Layer.
Optionally, the ohmic contact layer is p-type gallium-indium nitride layer.
Optionally, the epitaxial structure further include: the buffer layer between the substrate and the first type conductive layer
With unintentional doped layer；
The buffer layer is located at the unintentional doped layer away from one side surface of the first type conductive layer.
A kind of preparation method of light emitting diode, comprising:
Substrate is provided, substrate surface growth has an epitaxial structure, the epitaxial structure include at least the first type conductive layer,
Active area and second type conductive layer, the first type conductive layer have stack region and electrode district；
Ohmic contact layer is grown in the second type conductive layer surface；
The epitaxial structure and the ohmic contact layer are performed etching, to expose the electrode of the first type conductive layer
Area, the electrode district of the second type conductive layer and formation two contact layer units and contact positioned at two recessed between layer units
Slot, the groove expose the second type conductive layer；
The first current barrier layer is formed on the electrode district surface of the second type conductive layer, in connecing far from the electrode district
Contact layer cell surface forms the second current barrier layer, and in the epitaxial layer towards the electrode district side of the first type conductive layer
Surface forms separation layer；
Covering is located at insulation surface, the groove surfaces and the ohmic contact layer of the contact layer cell surface
Surface forms transparency conducting layer；
Second electrode is formed in the insulation surface for being located at the electrode district surface of the second type conductive layer, described first
The electrode district surface of type conductive layer forms first electrode.
Optionally, the epitaxial structure further include: the buffer layer between the substrate and the first type conductive layer
With unintentional doped layer；
The buffer layer is located at the unintentional doped layer away from one side surface of the first type conductive layer.
It can be seen from the above technical proposal that the embodiment of the invention provides a kind of light emitting diode and preparation method thereof,
Wherein, the light emitting diode extension body structure surface by setting include multiple extension layer units, multiple first kind grooves and
The mode of the heavy doping second type current extending of one the second class groove, multiple current barrier layers and transparency conducting layer, saturating
The comparable current path of multiple resistance sizes is formed in bright conductive layer, thus realize the three-dimensional current expansion of light emitting diode
Purpose improves the current expansion effect of light emitting diode；
And since the heavy doping second type current extending and multiple current barrier layers assist the transparency conducting layer
Constitute the comparable current path of multiple resistance sizes so that the thickness of the transparency conducting layer no setting is required it is thicker can also be real
Now preferable current expansion effect, to realize under the premise of not absorbing the emergent ray of excessive light emitting diode, for hair
Optical diode provides the purpose of good current expansion effect, and then reaches promotion quantum efficiency of light emitting dio, finally mentions
The purpose of the light extraction efficiency of high light emitting diode.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of the schematic diagram of the section structure for light emitting diode that one embodiment of the application provides；
Fig. 2 is a kind of the schematic diagram of the section structure for light emitting diode that another embodiment of the application provides；
Fig. 3 is a kind of flow diagram of the preparation method for light emitting diode that one embodiment of the application provides；
Fig. 4-Figure 10 is a kind of preparation flow schematic diagram for light emitting diode that one embodiment of the application provides；
Figure 11 is a kind of flow diagram of the preparation method for light emitting diode that another embodiment of the application provides；
Figure 12-Figure 17 is a kind of preparation flow schematic diagram for light emitting diode that another embodiment of the application provides.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present application provides a kind of light emitting diode, as shown in Figure 1, comprising:
Substrate 10；
Epitaxial structure positioned at 10 surface of substrate, the epitaxial structure include at least the first type limiting layer 11, active
Area 12, second type limiting layer 13 and second type current extending 14；
Deviate from the first electrode 19 on the epitaxial structure surface positioned at the substrate 10；
Heavy doping second type current extending 15 positioned at 14 surface of second type current extending, the heavy doping
The doping concentration of two type current extendings 15 is greater than the doping concentration of the second type current extending 14；
The heavy doping second type current extending 15 includes multiple extension layer units, multiple first kind grooves and one the
Two class grooves, the multiple first kind groove and a second class groove are distributed between the adjacent extension layer unit, described
First kind groove exposes the second type current extending 14, and the second class groove exposes the second type current expansion
The electrode zone of layer 14；
The current barrier layer of extension layer unit positioned at the second class bottom portion of groove and close to the second class groove
17；
It covers the heavy doping second type current extending 15,14 exposed surface of second type current extending and is located at and expand
Open up the transparency conducting layer 16 on 17 surface of current barrier layer on layer unit surface；
Covering is located at 16 surface of 17 surface of current barrier layer and partially transparent conductive layer of the second class bottom portion of groove
Second electrode 18.
With reference to Fig. 1, in Fig. 1, in order to avoid being directly entered second type current extending by the electric current of second electrode 18
14, it is provided with one layer of current barrier layer 17, between second electrode 18 and second type current extending 14 to be forced through second
The electric current of electrode 18 is by heavy doping second type current extending 15 or transparency conducting layer 16 or first passes through transparency conducting layer 16 again
Enter the second type current extending 14 by heavy doping second type current extending 15, and due to the heavy doping second
The doping concentration of type current extending 15 is greater than the doping concentration of the second type current extending 14, therefore electric current passes through thoroughly
Bright conductive layer 16 enters the path of second type current extending 14 and electric current is carried out by heavy doping second type current extending 15
The resistance in the path of second type current extending 14 is roughly the same, that is to say, that in Fig. 1, label L1, L2, L3, L4, L5 and
The electric current that L6 respectively passes through second electrode 18 enters the feasible path of second type current extending 14, the electricity of these feasible paths
Hinder roughly the same, and these feasible paths constitute a three-dimensional electric current substantially through entire transparency conducting layer 16
Extended network improves the current expansion of light emitting diode to realize the purpose of the three-dimensional current expansion of light emitting diode
Effect；
In addition, since the heavy doping second type current extending 15 and multiple current barrier layers 17 assist described transparent lead
Electric layer 16 constitutes the comparable current path of multiple resistance sizes, so that no setting is required is thicker for the thickness of the transparency conducting layer 16
Also preferable current expansion effect may be implemented, to realize the premise in the emergent ray for not absorbing excessive light emitting diode
Under, the purpose of good current expansion effect is provided for light emitting diode, and then reach promotion quantum efficiency of light emitting dio,
The purpose of the final light extraction efficiency for improving light emitting diode.
It should be noted that the epitaxial structure of the light emitting diode provided in the present embodiment is luminous the two of yellow red-emitting
The basic epitaxial structure of pole pipe, on the basis of the epitaxial structure, it is possible to have be located at the substrate 10 and limited with first type
Buffer layer 20 between preparative layer 11 can also have the distribution between the buffer layer 20 and the first type limiting layer 11
Formula Bragg mirror 21 (refers to Fig. 2)；Wherein, the buffer layer 20 is the substrate 10 and the Distributed Bragg Reflection
The transition structure of mirror 21, the distributed bragg reflector mirror 21 (Distributed Bragg Reflection, DBR) can be with
The luminous efficiency of the light emitting diode is promoted, the formation of the distributed bragg reflector mirror 21 can be by forming described first
The material of type limiting layer 11 is constituted, specific formation process with for as it is known to those skilled in the art that the application do not do herein it is superfluous
It states.
Preferably, in the preferred embodiment of the application, the doping concentration of the second type current extending is taken
Being worth range is 1017cm-3-5×1018cm-3, including endpoint value；
The value range of the doping concentration of the heavy doping second type current extending is 5 × 1018cm-3-1020cm-3, packet
Include endpoint value.
The value range of doping concentration is in the second type current extending of above range and heavy doping second type electric current expands
Exhibition layer can provide more apparent Ohmic contact difference, be more conducive to aiding in the transparency conducting layer formed it is a plurality of vertical
Body current channel enhances the current expansion effect of the transparency conducting layer.
In another preferred embodiment of the application, the width of the first kind groove is not less than the second class groove
Width.
Likewise, the mode for setting the width not less than the second class groove for the width of first kind groove can be more
It aids in well in the transparency conducting layer and forms a plurality of three-dimensional current channel, enhance the current expansion effect of the transparency conducting layer
Fruit.
Correspondingly, the embodiment of the present application also provides a kind of preparation methods of light emitting diode, as shown in Figure 3, comprising:
S101: providing substrate, and the substrate surface growth has epitaxial structure, and the epitaxial structure is limited including at least the first type
Preparative layer, active area, second type limiting layer and second type current extending；
With reference to Fig. 4, Fig. 4 is the schematic diagram of the section structure of the substrate and its surface texture, in the present embodiment, epitaxy junction
Structure is the basic epitaxial structure of the light emitting diode of yellow red-emitting, on the basis of the epitaxial structure, it is possible to have is located at described
Buffer layer between substrate and the first type limiting layer can also have positioned at the buffer layer and the first type limiting layer
Between distributed bragg reflector mirror (refer to Fig. 2)；Wherein, the buffer layer is the substrate and the distributed Bragg
The transition structure of reflecting mirror, the distributed bragg reflector mirror (Distributed Bragg Reflection, DBR) can be with
The luminous efficiency of the light emitting diode is promoted, the formation of the distributed bragg reflector mirror can be by forming first type
The material of limiting layer is constituted, specific formation process with for as it is known to those skilled in the art that the application this will not be repeated here.Figure
Label 10 in 4 indicates substrate, and 11 indicate the first type limiting layer, and 12 indicate active area, and 13 indicate second type limiting layer, and 14 indicate
Second type current extending.
S102: heavy doping second type current extending is grown on the epitaxial structure surface, and to the heavy doping second
Type current extending performs etching, and forms multiple extension layer units, multiple first kind grooves and a second class groove, described more
A first kind groove and a second class groove are distributed between the adjacent extension layer unit, and the first kind groove exposes
The second type current extending, the second class groove expose the electrode zone of the second type current extending；
With reference to Fig. 5, Fig. 5 is the schematic diagram of the section structure by step S102 back substrate and its surface texture, is shown in Fig. 5
Go out the heavy doping second type current extending being made of 4 extension layer units, 2 first kind grooves and 1 the second class groove,
For second electrode to be arranged in the second class groove, first kind groove is for being arranged transparency conducting layer.Label 15 indicates in Fig. 5
Heavy doping second type current extending, A1 indicate that first kind groove, A2 indicate the second class groove.
S103: it is formed and covers the second class bottom portion of groove and the extension layer cell surface close to the second class groove
Current barrier layer；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S103, the electricity with reference to Fig. 6, Fig. 6
For stopping the electric current of the second electrode of light emitting diode to be directly entered second type current extending, auxiliary forms more flow barrier
A comparable current expansion path of resistance.Label 17 indicates current barrier layer in Fig. 6.
S104: the heavy doping second type current extending, second type current extending exposed surface and position are being covered
Transparency conducting layer is grown in extension layer cell surface；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S104 with reference to Fig. 7, Fig. 7.Fig. 7 acceptance of the bid
Numbers 16 indicate transparency conducting layers.
S105: covering is located at the current blocking layer surface and partially transparent conductive layer surface shape of the second class bottom portion of groove
At second electrode；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S105 with reference to Fig. 8, Fig. 8.In Fig. 8
Label 18 indicates second electrode.
S106: first electrode is formed away from one side surface of epitaxial structure in the substrate.
It is the schematic diagram of the section structure of the substrate and its surface texture after step S106 with reference to Fig. 9, Fig. 9.Table in Fig. 9
Show 19 expression first electrodes.
In order to avoid the electric current by second electrode is directly entered second type current extending, in second electrode and second type
It is provided with one layer of current barrier layer between current extending, passes through heavy doping second type electricity to be forced through the electric current of second electrode
Stream extension layer or transparency conducting layer first passes through transparency conducting layer and passes through heavy doping second type current extending again and enter described the
Two type current extendings, and since the doping concentration of the heavy doping second type current extending is greater than the second type electricity
The doping concentration of extension layer is flowed, therefore electric current enters the path of second type current extending by transparency conducting layer and electric current passes through
The resistance that heavy doping second type current extending carries out the path of second type current extending is roughly the same, that is to say, that reference
Fig. 1, the electric current that label L1, L2, L3, L4, L5 and L6 respectively pass through second electrode enter the feasible of second type current extending
The resistance in path, these feasible paths is roughly the same, and these feasible paths are substantially through entire transparency conducting layer, structure
Hair is improved to realize the purpose of the three-dimensional current expansion of light emitting diode at a three-dimensional current expansion network
The current expansion effect of optical diode；
In addition, since the heavy doping second type current extending and multiple current barrier layers assist the transparency conducting layer
Constitute the comparable current path of multiple resistance sizes so that the thickness of the transparency conducting layer no setting is required it is thicker can also be real
Now preferable current expansion effect, to realize under the premise of not absorbing the emergent ray of excessive light emitting diode, for hair
Optical diode provides the purpose of good current expansion effect, and then reaches promotion quantum efficiency of light emitting dio, finally mentions
The purpose of the light extraction efficiency of high light emitting diode.
Correspondingly, the embodiment of the present application also provides a kind of light emitting diode, with reference to Figure 10, the light emitting diode packet
It includes:
Substrate 30；
Epitaxial structure positioned at 30 surface of substrate, the epitaxial structure include at least: the first type conductive layer 33, active
Area 34 and second type conductive layer 42, the first type conductive layer 33 have stack region and electrode district；
Ohmic contact layer 37 positioned at 42 surface of second type conductive layer, the ohmic contact layer 37 is in first type
The projection section on 33 surface of conductive layer covers the stack region；The ohmic contact layer 37 includes two contact layer units and one
Groove, the groove is located between two contact layer units, and exposes the second type conductive layer 42；
First electrode 35 positioned at the 33 electrode district surface of the first type conductive layer, the first electrode 35 is towards described outer
Prolong one side surface of structure with separation layer 36；
Second electrode 40 positioned at the ohmic contact layer 37 far from 35 side of first electrode, the second electrode 40
There is the first current barrier layer 41 between the second type conductive layer 42；
Contact layer cell surface close to the second electrode 40 has the second current barrier layer 39；
Cover the saturating of 42 exposed surface of second current barrier layer 39, the ohmic contact layer 37 and second type conductive layer
Bright conductive layer 38.
Likewise, the second electrode 40 and the second type are conductive in the structure of light emitting diode shown in Fig. 10
It is provided with the first current barrier layer 41 between layer 42, and has second close to the contact layer cell surface of the second electrode 40
Current barrier layer 39, to be forced through the electric current of second electrode 40 by ohmic contact layer 37 or transparency conducting layer 38 or first pass through
Transparency conducting layer 38 enters second type conductive layer 42 by ohmic contact layer 37 again, that is to say, that in Figure 10, label L7, L8,
The electric current that L9 and L10 respectively passes through second electrode 40 enters the feasible path of second type conductive layer 42, these feasible paths
Resistance is roughly the same, and these feasible paths constitute a three-dimensional electricity substantially through entire transparency conducting layer 38
Extended network is flowed, to realize the purpose of the three-dimensional current expansion of light emitting diode, the electric current for improving light emitting diode expands
Open up effect；
In addition, due to constituting the comparable current path of multiple resistance sizes in transparency conducting layer 38, so that described
The thickness of bright conductive layer 38 no setting is required it is thicker preferable current expansion effect also may be implemented, do not absorbed to realize
Under the premise of the emergent ray of multiple optical diode, the purpose of good current expansion effect is provided for light emitting diode, in turn
Reach promotion quantum efficiency of light emitting dio, the purpose of the final light extraction efficiency for improving light emitting diode.
It should be noted that the epitaxial structure of the light emitting diode provided in the present embodiment is the light-emitting diodes of green light of turning blue
The basic epitaxial structure of pipe, for the performance of optimized emission diode, in the preferred embodiment of the application, referring still to
Figure 10, the epitaxial structure can also include: the buffer layer 31 between the substrate 30 and the first type conductive layer 33
With unintentional doped layer 32；The buffer layer 31 is located at the unintentional doped layer 32 away from 33 side of the first type conductive layer
Surface.The application to the specific structure of the epitaxial structure and without limitation, specifically depending on actual conditions.
Optionally, the substrate 30 can be Sapphire Substrate 30, can also be silicon carbide substrates 30.
The ohmic contact layer 37 is p-type indium gallium nitride (P-GaInN) layer.
Correspondingly, the embodiment of the present application also provides a kind of preparation methods of light emitting diode, as shown in figure 11, comprising:
S201: providing substrate, and the substrate surface growth has epitaxial structure, and the epitaxial structure includes at least the first type and leads
Electric layer, active area and second type conductive layer, the first type conductive layer have stack region and electrode district；
It is the schematic diagram of the section structure of substrate and its surface texture with reference to Figure 12, Figure 12, what is provided in the present embodiment shines
The epitaxial structure of diode be turn blue green light light emitting diode basic epitaxial structure, for the property of optimized emission diode
Can, in the preferred embodiment of the application, with reference to Figure 10, the epitaxial structure can also include: positioned at the substrate with
Buffer layer and unintentional doped layer between the first type conductive layer；The buffer layer is located at the unintentional doped layer and deviates from
First type conductive layer, one side surface.To the specific structure of the epitaxial structure and without limitation, specific view is practical by the application
Depending on situation.Optionally, the substrate can be Sapphire Substrate, can also be silicon carbide substrates.30 table of label in Figure 12
Show substrate, 31 indicate buffer layer, and 32 indicate unintentional doped layer, and 33 indicate the first type conductive layer, and 34 indicate active area, and 42 indicate
Second type conductive layer.
S202: ohmic contact layer is grown in the second type conductive layer surface；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S202 with reference to Figure 13, Figure 13.It is optional
, the ohmic contact layer is p-type indium gallium nitride (P-GaInN) layer.37' in Figure 13 indicates non-etched Ohmic contact
Layer.
S203: performing etching the epitaxial structure and the ohmic contact layer, to expose the first type conductive layer
Electrode district, the second type conductive layer electrode district and formed two contact layer units and positioned at two contact layer units it
Between groove, the groove exposes the second type conductive layer；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S203 with reference to Figure 14, Figure 14.Figure 14
In label 37 indicate etching after ohmic contact layer.
S204: the first current barrier layer is formed on the electrode district surface of the second type conductive layer, far from the electrode
The contact layer cell surface in area forms the second current barrier layer, and in the epitaxial layer towards the electrode of the first type conductive layer
One side surface of area forms separation layer；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S204 with reference to Figure 15, Figure 15.Figure 15
In label 41 indicate the first current barrier layer, 39 indicate the second current barrier layers, 36 indicate separation layers.
S205: covering is located at insulation surface, the groove surfaces and described ohm of the contact layer cell surface
It contacts layer surface and forms transparency conducting layer；
It is the schematic diagram of the section structure of the substrate and its surface texture after step S205 with reference to Figure 16, Figure 16.Figure 16
In label 38 indicate the transparency conducting layer.
S206: second electrode is formed in the insulation surface for being located at the electrode district surface of the second type conductive layer, in institute
The electrode district surface for stating the first type conductive layer forms first electrode.
It is the schematic diagram of the section structure of the substrate and its surface texture after step S206 with reference to Figure 17, Figure 17.Figure 17
Middle label 40 indicates second electrode, and label 35 indicates first electrode.
With reference to Figure 10, in light emitting diode provided in this embodiment, the second electrode and the second type conductive layer
Between be provided with the first current barrier layer, and there is the second current blocking close to the contact layer cell surface of the second electrode
Layer, to be forced through the electric current of second electrode by ohmic contact layer or transparency conducting layer or first pass through transparency conducting layer and pass through again
Ohmic contact layer enters second type conductive layer, that is to say, that in Figure 10, label L7, L8, L9 and L10 are respectively to pass through second
The electric current of electrode enters the feasible path of second type conductive layer, and the resistance of these feasible paths is roughly the same, and these are feasible
Path constitutes a three-dimensional current expansion network, to realize luminous two substantially through entire transparency conducting layer
The purpose of the three-dimensional current expansion of pole pipe improves the current expansion effect of light emitting diode；
In addition, due to constituting the comparable current path of multiple resistance sizes in the transparent conductive layer, so that described transparent
The thickness of conductive layer no setting is required it is thicker preferable current expansion effect also may be implemented, thus realize do not absorbed it is multiple
Under the premise of the emergent ray of optical diode, the purpose of good current expansion effect is provided for light emitting diode, and then reach
Promote quantum efficiency of light emitting dio, the purpose of the final light extraction efficiency for improving light emitting diode.
In conclusion the embodiment of the present application provides a kind of light emitting diode and preparation method thereof, wherein described to shine two
Pole pipe includes multiple extension layer units, multiple first kind grooves and a second class groove by setting in extension body structure surface
The mode of heavy doping second type current extending, multiple current barrier layers and transparency conducting layer is formed more in the transparent conductive layer
A comparable current path of resistance sizes improves luminous to realize the purpose of the three-dimensional current expansion of light emitting diode
The current expansion effect of diode；
And since the heavy doping second type current extending and multiple current barrier layers assist the transparency conducting layer
Constitute the comparable current path of multiple resistance sizes so that the thickness of the transparency conducting layer no setting is required it is thicker can also be real
Now preferable current expansion effect, to realize under the premise of not absorbing the emergent ray of excessive light emitting diode, for hair
Optical diode provides the purpose of good current expansion effect, and then reaches promotion quantum efficiency of light emitting dio, finally mentions
The purpose of the light extraction efficiency of high light emitting diode.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of light emitting diode characterized by comprising
Substrate；
Positioned at the epitaxial structure of the substrate surface, the epitaxial structure includes at least the first type limiting layer, active area, second type
Limiting layer and second type current extending；
Deviate from the first electrode on the epitaxial structure surface positioned at the substrate；
Positioned at the heavy doping second type current extending of the second type current expansion layer surface, the heavy doping second type electric current
The doping concentration of extension layer is greater than the doping concentration of the second type current extending；
The heavy doping second type current extending includes that multiple extension layer units, multiple first kind grooves and second class are recessed
Slot, the multiple first kind groove and a second class groove are distributed between the adjacent extension layer unit, the first kind
Groove exposes the second type current extending, and the second class groove exposes the electrode of the second type current extending
Region；
Deviate from the one side of substrate positioned at the second class bottom portion of groove and close to the extension layer unit of the second class groove
Current barrier layer；
It covers the heavy doping second type current extending, second type current extending exposed surface and is located at extension layer unit
Deviate from the transparency conducting layer on the one side of substrate surface away from the current barrier layer on the one side of substrate surface；
Covering is located at the current blocking layer surface of the second class bottom portion of groove and the second electricity of partially transparent conductive layer surface
Pole.
2. light emitting diode according to claim 1, which is characterized in that the doping concentration of the second type current extending
Value range be 1017cm-3-5×1018cm-3, including endpoint value；
The value range of the doping concentration of the heavy doping second type current extending is 5 × 1018cm-3-1020cm-3, including end
Point value.
3. light emitting diode according to claim 2, which is characterized in that the width of the first kind groove is not less than described
The width of second class groove.
4. a kind of preparation method of light emitting diode characterized by comprising
There is provided substrate, substrate surface growth has an epitaxial structure, and the epitaxial structure includes at least the first type limiting layer, active
Area, second type limiting layer and second type current extending；
Heavy doping second type current extending is grown on the epitaxial structure surface, and to the heavy doping second type current expansion
Layer performs etching, and it is recessed to form multiple extension layer units, multiple first kind grooves and a second class groove, the multiple first kind
Slot and a second class groove are distributed between the adjacent extension layer unit, and the first kind groove exposes the second type
Current extending, the second class groove expose the electrode zone of the second type current extending；
It is formed and covers the second class bottom portion of groove and deviate from the substrate close to the extension layer unit of the second class groove
The current barrier layer of one side surface；
It is covering the heavy doping second type current extending, second type current extending exposed surface and is being located at extension layer list
Current barrier layer of the member away from the one side of substrate surface grows transparency conducting layer away from the one side of substrate surface；
Covering is located at the current blocking layer surface of the second class bottom portion of groove and partially transparent conductive layer surface forms the second electricity
Pole；
First electrode is formed away from one side surface of epitaxial structure in the substrate.
5. according to the method described in claim 4, it is characterized in that, the value of the doping concentration of the second type current extending
Range is 1017cm-3-5×1018cm-3, including endpoint value；
The value range of the doping concentration of the heavy doping second type current extending is 5 × 1018cm-3-1020cm-3, including end
Point value.
6. a kind of light emitting diode characterized by comprising
Substrate；
Positioned at the epitaxial structure of the substrate surface, the epitaxial structure is included at least: the first type conductive layer, active area and second
Type conductive layer, the first type conductive layer have stack region and electrode district；
Positioned at the ohmic contact layer of the second type conductive layer surface, the ohmic contact layer is in the first type conductive layer surface
Projection section cover the stack region；The ohmic contact layer includes two contact layer units and a groove, the groove
Between two contact layer units, and expose the second type conductive layer；
First electrode positioned at the first type conducting layer electrode area surface, the first electrode is towards the epitaxial structure side
Sidewall surfaces have separation layer；
Second electrode positioned at the ohmic contact layer far from the first electrode side, the second electrode and the second type
There is the first current barrier layer between conductive layer；
Contact layer unit close to the second electrode has the second current barrier layer away from the one side of substrate surface；
Cover the transparency conducting layer of second current barrier layer, the ohmic contact layer and second type conductive layer exposed surface.
7. light emitting diode according to claim 6, which is characterized in that the ohmic contact layer is p-type gallium-indium nitride layer.
8. light emitting diode according to claim 6, which is characterized in that the epitaxial structure further include: be located at the lining
Buffer layer and unintentional doped layer between bottom and the first type conductive layer；
The buffer layer is located at the unintentional doped layer away from one side surface of the first type conductive layer.
9. a kind of preparation method of light emitting diode characterized by comprising
There is provided substrate, substrate surface growth has an epitaxial structure, and the epitaxial structure includes at least the first type conductive layer, active
Area and second type conductive layer, the first type conductive layer have stack region and electrode district；
Ohmic contact layer is grown in the second type conductive layer surface；
The epitaxial structure and the ohmic contact layer are performed etching, with expose the first type conductive layer electrode district,
The electrode district of the second type conductive layer and the groove for forming two contact layer units and being contacted between layer unit positioned at two,
The groove exposes the second type conductive layer；
The first current barrier layer is formed on the electrode district surface of the second type conductive layer, in the separate second type conductive layer
The contact layer unit of electrode district forms the second current barrier layer away from the one side of substrate surface, and in the epitaxial layer towards institute
The sidewall surfaces for stating the electrode district side of the first type conductive layer form separation layer；
Covering is located at insulation surface, the groove surfaces and the Ohmic contact layer surface of the contact layer cell surface
Form transparency conducting layer；
Second electrode is formed in the insulation surface for being located at the electrode district surface of the second type conductive layer, is led in first type
The electrode district surface of electric layer forms first electrode.
10. according to the method described in claim 9, it is characterized in that, the epitaxial structure further include: be located at the substrate and institute
State the buffer layer and unintentional doped layer between the first type conductive layer；
The buffer layer is located at the unintentional doped layer away from one side surface of the first type conductive layer.
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Effective date of registration: 20221025 Address after: Room 420-10, South Building, Torch Plaza, No. 56-58, Torch Road, Torch Park, Torch High-tech Zone, Xiamen, Fujian 361006 Patentee after: Xiamen Future Display Technology Research Institute Co.,Ltd. Address before: 361100 Fujian Xiamen torch high tech Zone (Xiangan) Industrial Zone, No. 259-269, Xiang Tian Road. Patentee before: Xiamen Changelight Co.,Ltd. |