CN107658379A - A kind of manufacture method of the radiator for semiconductor of liquid crystal display heat radiation module - Google Patents
A kind of manufacture method of the radiator for semiconductor of liquid crystal display heat radiation module Download PDFInfo
- Publication number
- CN107658379A CN107658379A CN201710836354.3A CN201710836354A CN107658379A CN 107658379 A CN107658379 A CN 107658379A CN 201710836354 A CN201710836354 A CN 201710836354A CN 107658379 A CN107658379 A CN 107658379A
- Authority
- CN
- China
- Prior art keywords
- type semiconductor
- ceramic film
- insulating ceramic
- connecting layer
- metal connecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 136
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 21
- 230000005855 radiation Effects 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 238000002203 pretreatment Methods 0.000 claims abstract description 7
- 238000005266 casting Methods 0.000 claims abstract description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract description 4
- YXVXMURDCBMPRH-UHFFFAOYSA-N Lirinidine Natural products C1C2=CC=CC=C2C2=C(O)C(OC)=CC3=C2C1N(C)CC3 YXVXMURDCBMPRH-UHFFFAOYSA-N 0.000 claims description 3
- ORJVQPIHKOARKV-UHFFFAOYSA-N Nuciferine Natural products C1C2=CC=CC=C2C2=C(OC)C(OC)=CC3=C2C1N(C)CC3 ORJVQPIHKOARKV-UHFFFAOYSA-N 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- 229910000278 bentonite Inorganic materials 0.000 claims description 3
- 239000000440 bentonite Substances 0.000 claims description 3
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- ORJVQPIHKOARKV-OAHLLOKOSA-N nuciferine Chemical compound C1C2=CC=CC=C2C2=C(OC)C(OC)=CC3=C2[C@@H]1N(C)CC3 ORJVQPIHKOARKV-OAHLLOKOSA-N 0.000 claims description 3
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 abstract description 2
- 210000005056 cell body Anatomy 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133382—Heating or cooling of liquid crystal cells other than for activation, e.g. circuits or arrangements for temperature control, stabilisation or uniform distribution over the cell
- G02F1/133385—Heating or cooling of liquid crystal cells other than for activation, e.g. circuits or arrangements for temperature control, stabilisation or uniform distribution over the cell with cooling means, e.g. fans
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to display technology field, more particularly to a kind of manufacture method of the radiator for semiconductor of liquid crystal display heat radiation module.Step is as follows：First insulating ceramic film, the second insulating ceramic film, are made up of ceramic material；N-type semiconductor, P-type semiconductor, are prepared according to prior art；Metal connecting layer, formed by metal alloy compositions casting；Metal connecting layer is placed in pre-treatment at least 10 minutes in tank liquor, simultaneously naturally dry is cleaned up after taking-up；First by N-type semiconductor and P-type semiconductor arranged for interval, metal connecting layer is then arranged on to the both sides of N-type semiconductor and P-type semiconductor, then the first insulating ceramic film, the second insulating ceramic film are arranged in the metal connecting layer of both sides, are finally connected power supply with the metal connecting layer positioned at N-type semiconductor and P-type semiconductor outermost both ends by wire.By rationally designing technique, make that the heat dispersion of the radiator for semiconductor of manufacture is more preferable, and service life is longer.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of radiator for semiconductor of liquid crystal display heat radiation module
Manufacture method.
Background technology
Liquid crystal display is the display device of planar ultra-thin, and it is made up of a number of colored or monochrome pixels, places
In front of light source or reflecting surface.Liquid crystal display power consumption is very low, therefore is favored by engineer, is suitable for use with the electricity of battery
Sub- equipment.Its cardinal principle is to stimulate liquid crystal molecule to produce point, line, surface with electric current to coordinate back fluorescent tube to be formed picture.
The generally internal LED light bar longevity of service of existing liquid crystal display easily generates heat, and causes the life-span to decline.
The content of the invention
It is an object of the invention to provide a kind of liquid crystal display heat radiation module, it is generally interior to solve existing liquid crystal display
The LED light bar longevity of service in portion easily generates heat, the problem of causing the life-span to decline.Meanwhile present invention also offers a kind of liquid crystal
The radiator for semiconductor and its manufacture method of display heat radiation module.
Technical scheme is as follows：
A kind of liquid crystal display heat radiation module, including：Base, display rear shell, display screen, LED light bar, optical diaphragm group
And radiating subassembly；
The display rear shell is arranged on the base, and the display screen is arranged in the display rear shell；It is described
The optical diaphragm group is provided with display rear shell on the inside of the display screen, the optical diaphragm group bottom is provided with described
LED light bar；
The radiating subassembly is arranged at the outside of the display rear shell, and positioned at the side of the LED light bar；
The position that the outside of the display rear shell corresponds to the LED light bar is provided with cell body, the cell body and the LED
Multiple heat emission holes are provided between lamp bar；The radiating subassembly includes the radiator for semiconductor being arranged in the cell body, and
It is arranged at outside the display rear shell, covers the radiator casing of the radiator for semiconductor；
The radiator for semiconductor, which includes the first insulating ceramic film, the second insulating ceramic film, N-type semiconductor, p-type, partly leads
Body, metal connecting layer, and power supply；The N-type semiconductor and the P-type semiconductor are spaced apart, the adjacent N-type semiconductor
Connected between the end of the P-type semiconductor by the metal connecting layer, first insulating ceramic film is arranged at the N
In the metal connecting layer of type semiconductor and the P-type semiconductor side, second insulating ceramic film is arranged at the N-type and partly led
In the metal connecting layer of body and the P-type semiconductor opposite side；The power supply is with being located at the N-type semiconductor and the p-type half
The metal connecting layer connection at conductor outermost both ends, it is described so as to which the N-type semiconductor and P-type semiconductor are connected into loop
First insulating ceramic film is cold end, and second insulating ceramic film is hot junction, first insulating ceramic film and the heat emission hole
Relatively.
Preferably, the heat emission hole is the multiple strip heat emission holes be arrangeding in parallel.
Preferably, it is provided with gap between first insulating ceramic film and the heat emission hole.
A kind of radiator for semiconductor of liquid crystal display heat radiation module, including the first insulating ceramic film, the second insulating ceramics
Piece, N-type semiconductor, P-type semiconductor, metal connecting layer, and power supply；N-type semiconductor and P-type semiconductor are spaced apart, adjacent N
Connected between type semiconductor and the end of P-type semiconductor by metal connecting layer, the first insulating ceramic film is arranged at N-type semiconductor
In the metal connecting layer of P-type semiconductor side, the second insulating ceramic film is arranged at N-type semiconductor and P-type semiconductor opposite side
Metal connecting layer on；Power supply is connected with the metal connecting layer positioned at N-type semiconductor and P-type semiconductor outermost both ends, so as to
N-type semiconductor and P-type semiconductor are connected into loop, the first insulating ceramic film is cold end, and the second insulating ceramic film is hot junction.
A kind of manufacture method of the radiator for semiconductor of liquid crystal display heat radiation module, step are as follows：
1), structure and process respectively
Radiator for semiconductor, including the first insulating ceramic film, the second insulating ceramic film, N-type semiconductor, P-type semiconductor, gold
Belong to articulamentum, and power supply；N-type semiconductor and P-type semiconductor are spaced apart, the end of adjacent N-type semiconductor and P-type semiconductor
Between connected by metal connecting layer, the first insulating ceramic film is arranged at N-type semiconductor and connected with the metal of P-type semiconductor side
On layer, the second insulating ceramic film is arranged in the metal connecting layer of N-type semiconductor and P-type semiconductor opposite side；Power supply is with being located at N
Type semiconductor connects with the metal connecting layer at P-type semiconductor outermost both ends, so as to which N-type semiconductor be connected with P-type semiconductor
Into loop, the first insulating ceramic film is cold end, and the second insulating ceramic film is hot junction；
First insulating ceramic film, the second insulating ceramic film, are made up of ceramic material；
N-type semiconductor, P-type semiconductor, are prepared according to prior art；
Metal connecting layer, formed by metal alloy compositions casting；
2), pre-treatment
Metal connecting layer is placed in pre-treatment at least 10 minutes in tank liquor, simultaneously naturally dry is cleaned up after taking-up；
Bath solution constituents are：5.5 parts of bentonite, 4.5 parts of silicate, 10.5 parts of water, 20 parts of epoxy acrylate, Nuciferine 1
Part；
3) follow-up assembled formation
First by N-type semiconductor and P-type semiconductor arranged for interval, metal connecting layer is then arranged on N-type semiconductor and P
The both sides of type semiconductor, then the first insulating ceramic film, the second insulating ceramic film are arranged in the metal connecting layer of both sides, finally
Power supply is connected by wire with the metal connecting layer positioned at N-type semiconductor and P-type semiconductor outermost both ends.
Advantage for present invention is with effect：
1) a kind of, liquid crystal display heat radiation module of the invention, including：Base, display rear shell, display screen, LED
Bar, optical diaphragm group and radiating subassembly；Display rear shell is arranged on base, and display screen is arranged in display rear shell；It is aobvious
Show in device rear shell and optical diaphragm group is provided with the inside of display screen, optical diaphragm group bottom is provided with LED light bar；Radiating subassembly is set
The outside of display rear shell is placed in, and positioned at the side of LED light bar；The position that the outside of display rear shell corresponds to LED light bar is set
Cell body is equipped with, multiple heat emission holes are provided between cell body and LED light bar；The semiconductor that radiating subassembly includes being arranged in cell body dissipates
Hot device, and be arranged at outside display rear shell, cover the radiator casing of radiator for semiconductor；Radiator for semiconductor can be passed through
Reduce the temperature on the outside of LED light bar so that heat caused by LED light bar is cooled down in time, heat radiation performance.
2), the radiator for semiconductor and its manufacture method of a kind of liquid crystal display heat radiation module of the invention, by reasonable
Design technology, makes that the heat dispersion of the radiator for semiconductor of manufacture is more preferable, and service life is longer.
Brief description of the drawings
The invention will be further described below in conjunction with the accompanying drawings：
Fig. 1 is a kind of sectional view of liquid crystal display heat radiation module of the present invention.
Fig. 2 is the close-up schematic view of Fig. 1 a-quadrant.
Fig. 3 is the structural representation of radiator for semiconductor.
Embodiment
Embodiment 1
Fig. 1 to Fig. 3 is referred to, the present invention provides a kind of liquid crystal display heat radiation module, including：Base 1, display rear shell
2nd, display screen 3, LED light bar 4, optical diaphragm group 5 and radiating subassembly 6；The display rear shell 2 is arranged on the base 1,
The display screen 3 is arranged in the display rear shell 2；Set in the inner side of display screen 3 in the display rear shell 2
Optical diaphragm group 5 is stated, the bottom of optical diaphragm group 5 is provided with the LED light bar 4；The radiating subassembly 6 is arranged at described aobvious
Show the outside of device rear shell 2, and positioned at the side of the LED light bar 4；The outside of the display rear shell 2 corresponds to the LED light bar
4 position is provided with cell body, and multiple heat emission holes 7 are provided between the cell body and the LED light bar 4；The radiating subassembly 6 wraps
The radiator for semiconductor 8 being arranged in the cell body is included, and is arranged at outside the display rear shell 2, covering is described partly to be led
The radiator casing 9 of body radiator 8.
Specifically, the radiator for semiconductor 8 is partly led including the first insulating ceramic film 10, the second insulating ceramic film 11, N-type
Body 12, P-type semiconductor 13, metal connecting layer 14, and power supply 15；The N-type semiconductor 12 and the P-type semiconductor 13 are spaced
It is distributed, is connected between the end of the adjacent N-type semiconductor 12 and the P-type semiconductor 13 by the metal connecting layer 14,
First insulating ceramic film 10 is arranged at the metal connecting layer 14 of N-type semiconductor 12 and the P-type semiconductor 13 side
On, second insulating ceramic film 11 is arranged at the N-type semiconductor 12 and connected with the metal of the opposite side of P-type semiconductor 13
On layer 14；The power supply 15 and the metal connecting layer positioned at the N-type semiconductor 12 and the outermost both ends of the P-type semiconductor 13
14 connections, so as to which the N-type semiconductor 12 and P-type semiconductor 13 are connected into loop, first insulating ceramic film 10 is cold
End, second insulating ceramic film 11 is hot junction, and first insulating ceramic film 10 is relative with the heat emission hole 7.The radiating
Hole 7 is the multiple strip heat emission holes be arrangeding in parallel.Between being provided between first insulating ceramic film 10 and the heat emission hole 7
Gap.
A kind of liquid crystal display heat radiation module provided by the invention, it is former using semiconductor refrigerating by setting radiating subassembly 6
Reason realizes cooling, heat radiation performance.
Embodiment 2
A kind of manufacture method of the radiator for semiconductor of liquid crystal display heat radiation module, step are as follows：
1), structure and process respectively
Radiator for semiconductor, including the first insulating ceramic film, the second insulating ceramic film, N-type semiconductor, P-type semiconductor, gold
Belong to articulamentum, and power supply；N-type semiconductor and P-type semiconductor are spaced apart, the end of adjacent N-type semiconductor and P-type semiconductor
Between connected by metal connecting layer, the first insulating ceramic film is arranged at N-type semiconductor and connected with the metal of P-type semiconductor side
On layer, the second insulating ceramic film is arranged in the metal connecting layer of N-type semiconductor and P-type semiconductor opposite side；Power supply is with being located at N
Type semiconductor connects with the metal connecting layer at P-type semiconductor outermost both ends, so as to which N-type semiconductor be connected with P-type semiconductor
Into loop, the first insulating ceramic film is cold end, and the second insulating ceramic film is hot junction；
First insulating ceramic film, the second insulating ceramic film, are made up of ceramic material；
N-type semiconductor, P-type semiconductor, are prepared according to prior art；
Metal connecting layer, formed by metal alloy compositions casting；
2), pre-treatment
Metal connecting layer is placed in pre-treatment at least 10 minutes in tank liquor, simultaneously naturally dry is cleaned up after taking-up；
Bath solution constituents are：5.5 parts of bentonite, 4.5 parts of silicate, 10.5 parts of water, 20 parts of epoxy acrylate, Nuciferine 1
Part；
3) follow-up assembled formation
First by N-type semiconductor and P-type semiconductor arranged for interval, metal connecting layer is then arranged on N-type semiconductor and P
The both sides of type semiconductor, then the first insulating ceramic film, the second insulating ceramic film are arranged in the metal connecting layer of both sides, finally
Power supply is connected by wire with the metal connecting layer positioned at N-type semiconductor and P-type semiconductor outermost both ends.
The present invention is not limited to above-described embodiment, and embodiment is exemplary, it is intended to for explaining the present invention, and can not
It is interpreted as limitation of the present invention.
Claims (1)
1. a kind of manufacture method of the radiator for semiconductor of liquid crystal display heat radiation module, it is characterised in that step is as follows：
1), structure and process respectively
Radiator for semiconductor, including the first insulating ceramic film, the second insulating ceramic film, N-type semiconductor, P-type semiconductor, metal connect
Connect layer, and power supply；N-type semiconductor and P-type semiconductor are spaced apart, between the end of adjacent N-type semiconductor and P-type semiconductor
Connected by metal connecting layer, the first insulating ceramic film is arranged at the metal connecting layer of N-type semiconductor and P-type semiconductor side
On, the second insulating ceramic film is arranged in the metal connecting layer of N-type semiconductor and P-type semiconductor opposite side；Power supply is with being located at N-type
Semiconductor connects with the metal connecting layer at P-type semiconductor outermost both ends, so as to which N-type semiconductor and P-type semiconductor be connected into
Loop, the first insulating ceramic film are cold end, and the second insulating ceramic film is hot junction；
First insulating ceramic film, the second insulating ceramic film, are made up of ceramic material；
N-type semiconductor, P-type semiconductor, are prepared according to prior art；
Metal connecting layer, formed by metal alloy compositions casting；
2), pre-treatment
Metal connecting layer is placed in pre-treatment at least 10 minutes in tank liquor, simultaneously naturally dry is cleaned up after taking-up；
Bath solution constituents are：5.5 parts of bentonite, 4.5 parts of silicate, 10.5 parts of water, 20 parts of epoxy acrylate, 1 part of Nuciferine；
3) follow-up assembled formation
First by N-type semiconductor and P-type semiconductor arranged for interval, metal connecting layer is then arranged on N-type semiconductor and p-type half
The both sides of conductor, then the first insulating ceramic film, the second insulating ceramic film are arranged in the metal connecting layer of both sides, finally by electricity
Source is connected by wire with the metal connecting layer positioned at N-type semiconductor and P-type semiconductor outermost both ends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710836354.3A CN107658379A (en) | 2017-09-16 | 2017-09-16 | A kind of manufacture method of the radiator for semiconductor of liquid crystal display heat radiation module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710836354.3A CN107658379A (en) | 2017-09-16 | 2017-09-16 | A kind of manufacture method of the radiator for semiconductor of liquid crystal display heat radiation module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107658379A true CN107658379A (en) | 2018-02-02 |
Family
ID=61129592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710836354.3A Withdrawn CN107658379A (en) | 2017-09-16 | 2017-09-16 | A kind of manufacture method of the radiator for semiconductor of liquid crystal display heat radiation module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107658379A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201196510Y (en) * | 2008-03-17 | 2009-02-18 | 庆杨 | Semiconductor refrigeration device, constant temperature heat radiating device and constant temperature high-protection electric control cabinet |
| CN201583044U (en) * | 2009-12-16 | 2010-09-15 | 林香莉 | Freezing structure with double thermoelectric semiconductors |
| CN201680648U (en) * | 2010-04-27 | 2010-12-22 | 上海市七宝中学 | Refrigerator |
| CN201904319U (en) * | 2010-12-25 | 2011-07-20 | 紫光股份有限公司 | Thermoelectric computer chip radiator |
| CN102130076A (en) * | 2010-12-25 | 2011-07-20 | 紫光股份有限公司 | Thermoelectric computer chip radiator |
-
2017
- 2017-09-16 CN CN201710836354.3A patent/CN107658379A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201196510Y (en) * | 2008-03-17 | 2009-02-18 | 庆杨 | Semiconductor refrigeration device, constant temperature heat radiating device and constant temperature high-protection electric control cabinet |
| CN201583044U (en) * | 2009-12-16 | 2010-09-15 | 林香莉 | Freezing structure with double thermoelectric semiconductors |
| CN201680648U (en) * | 2010-04-27 | 2010-12-22 | 上海市七宝中学 | Refrigerator |
| CN201904319U (en) * | 2010-12-25 | 2011-07-20 | 紫光股份有限公司 | Thermoelectric computer chip radiator |
| CN102130076A (en) * | 2010-12-25 | 2011-07-20 | 紫光股份有限公司 | Thermoelectric computer chip radiator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103925492B (en) | LED light device | |
| CN105158973B (en) | Liquid crystal display | |
| CN109168302A (en) | A kind of wearable device | |
| TW200824143A (en) | Light emitting diode and the assembly of liquid/vapor phase heat sink device | |
| JP2005101658A (en) | Light emitting device having highly efficient heat dissipation structure | |
| CN201246614Y (en) | LED bulb | |
| CN103597592B (en) | Liquid-cooling LED illuminating lamp | |
| CN208721955U (en) | A kind of backlight module and liquid crystal display panel | |
| CN104033774B (en) | A kind of filament LED bulb | |
| CN202581233U (en) | Heat radiating device of backlight module and liquid crystal display | |
| CN107658379A (en) | A kind of manufacture method of the radiator for semiconductor of liquid crystal display heat radiation module | |
| CN107728360A (en) | A kind of radiator for semiconductor of liquid crystal display heat radiation module | |
| CN209594131U (en) | A kind of wearable device | |
| CN107656396A (en) | A kind of liquid crystal display heat radiation module | |
| TWI261938B (en) | LED device and LED heat dissipation system | |
| CN208418279U (en) | For display and the side entering type LED light source of lamp box | |
| CN102235610A (en) | LED (light emitting diode) ball bulb | |
| CN209249898U (en) | A kind of water-cooled plate applied to flash lamp pumping heat dissipation | |
| CN207999728U (en) | Thermal diffusivity good luminescence component and backlight module | |
| CN202852520U (en) | Light-emitting diode (LED) lamp bulb | |
| CN202109330U (en) | SMD (surface mount device) LED (light-emitting device) streamer lamp | |
| CN101943328A (en) | Single super-power LED light source lamp | |
| CN203453861U (en) | Water-cooling heat dissipation type high-power LED device | |
| CN201335346Y (en) | Radiating structure of LED lamp backlighting device | |
| CN202302887U (en) | Full-plastic LED lamp tube |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180202 |
|
| WW01 | Invention patent application withdrawn after publication |