CN107658226A - 热处理设备和热处理方法 - Google Patents

热处理设备和热处理方法 Download PDF

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Publication number
CN107658226A
CN107658226A CN201710615057.6A CN201710615057A CN107658226A CN 107658226 A CN107658226 A CN 107658226A CN 201710615057 A CN201710615057 A CN 201710615057A CN 107658226 A CN107658226 A CN 107658226A
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CN
China
Prior art keywords
substrate
gas
air chamber
inert gas
jet
Prior art date
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Granted
Application number
CN201710615057.6A
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English (en)
Chinese (zh)
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CN107658226B (zh
Inventor
沈亨基
金泰俊
崔东奎
张民奎
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AP Cells Inc
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AP Cells Inc
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Publication date
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Publication of CN107658226A publication Critical patent/CN107658226A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
CN201710615057.6A 2016-07-26 2017-07-25 热处理设备和热处理方法 Active CN107658226B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0094907 2016-07-26
KR1020160094907A KR101958714B1 (ko) 2016-07-26 2016-07-26 열처리 장치 및 열처리 방법

Publications (2)

Publication Number Publication Date
CN107658226A true CN107658226A (zh) 2018-02-02
CN107658226B CN107658226B (zh) 2023-07-25

Family

ID=61128126

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710615057.6A Active CN107658226B (zh) 2016-07-26 2017-07-25 热处理设备和热处理方法

Country Status (3)

Country Link
KR (1) KR101958714B1 (ko)
CN (1) CN107658226B (ko)
TW (1) TWI743152B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111781870A (zh) * 2020-06-19 2020-10-16 北京北方华创微电子装备有限公司 热处理的控制方法、装置及设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6139642A (en) * 1997-03-21 2000-10-31 Kokusai Electric Co., Ltd. Substrate processing apparatus and method
KR20010060128A (ko) * 1999-12-31 2001-07-06 박종섭 반도체의 건식각 공정용 가스 공급 장치
KR20070027882A (ko) * 2005-08-30 2007-03-12 삼성전자주식회사 반도체 제조설비에서의 가스 공급 장치
US20090035100A1 (en) * 2007-07-31 2009-02-05 Tdk Corporation Method of processing an object in a container and lid opening/closing system used in the method
CN104576357A (zh) * 2013-10-21 2015-04-29 Ap系统股份有限公司 气体注射单元以及包含所述气体注射单元的热处理设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002093738A (ja) 2000-09-18 2002-03-29 Toshiba Corp 多結晶半導体膜の製造装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6139642A (en) * 1997-03-21 2000-10-31 Kokusai Electric Co., Ltd. Substrate processing apparatus and method
KR20010060128A (ko) * 1999-12-31 2001-07-06 박종섭 반도체의 건식각 공정용 가스 공급 장치
KR20070027882A (ko) * 2005-08-30 2007-03-12 삼성전자주식회사 반도체 제조설비에서의 가스 공급 장치
US20090035100A1 (en) * 2007-07-31 2009-02-05 Tdk Corporation Method of processing an object in a container and lid opening/closing system used in the method
CN104576357A (zh) * 2013-10-21 2015-04-29 Ap系统股份有限公司 气体注射单元以及包含所述气体注射单元的热处理设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111781870A (zh) * 2020-06-19 2020-10-16 北京北方华创微电子装备有限公司 热处理的控制方法、装置及设备

Also Published As

Publication number Publication date
TWI743152B (zh) 2021-10-21
KR101958714B1 (ko) 2019-03-18
CN107658226B (zh) 2023-07-25
TW201816892A (zh) 2018-05-01
KR20180012090A (ko) 2018-02-05

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