CN107658044A - 一种高背极拉力防隐裂的perc晶体硅太阳能电池背钝化银浆及其制备方法 - Google Patents
一种高背极拉力防隐裂的perc晶体硅太阳能电池背钝化银浆及其制备方法 Download PDFInfo
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- CN107658044A CN107658044A CN201710704055.4A CN201710704055A CN107658044A CN 107658044 A CN107658044 A CN 107658044A CN 201710704055 A CN201710704055 A CN 201710704055A CN 107658044 A CN107658044 A CN 107658044A
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- silver paste
- solar cell
- crystalline silicon
- silicon solar
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 39
- 239000004332 silver Substances 0.000 title claims abstract description 39
- 238000002161 passivation Methods 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract 10
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract 10
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract 10
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims description 32
- 238000005336 cracking Methods 0.000 title claims description 10
- 239000011521 glass Substances 0.000 claims abstract description 28
- -1 organic bond Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 239000000853 adhesive Substances 0.000 claims abstract description 8
- 230000001070 adhesive effect Effects 0.000 claims abstract description 8
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims description 39
- 239000002245 particle Substances 0.000 claims description 20
- 239000002002 slurry Substances 0.000 claims description 20
- 239000002994 raw material Substances 0.000 claims description 16
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 claims description 12
- 239000000654 additive Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 8
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 239000011230 binding agent Substances 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical group 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 7
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 6
- 239000001856 Ethyl cellulose Substances 0.000 claims description 6
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- LQZZUXJYWNFBMV-UHFFFAOYSA-N ethyl butylhexanol Natural products CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 claims description 6
- 229920001249 ethyl cellulose Polymers 0.000 claims description 6
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 6
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 6
- 238000010791 quenching Methods 0.000 claims description 6
- 238000007873 sieving Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 230000001788 irregular Effects 0.000 claims description 4
- 238000000498 ball milling Methods 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims description 2
- 239000008240 homogeneous mixture Substances 0.000 claims description 2
- 238000005096 rolling process Methods 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- ODCMOZLVFHHLMY-UHFFFAOYSA-N 1-(2-hydroxyethoxy)hexan-2-ol Chemical compound CCCCC(O)COCCO ODCMOZLVFHHLMY-UHFFFAOYSA-N 0.000 claims 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims 1
- 229920002521 macromolecule Polymers 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052710 silicon Inorganic materials 0.000 abstract description 15
- 239000010703 silicon Substances 0.000 abstract description 15
- 239000000758 substrate Substances 0.000 abstract description 14
- 230000032683 aging Effects 0.000 abstract description 12
- 238000002474 experimental method Methods 0.000 abstract description 8
- 238000007639 printing Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000003466 welding Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 230000009466 transformation Effects 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000000428 dust Substances 0.000 abstract 1
- SJWPTBFNZAZFSH-UHFFFAOYSA-N pmpp Chemical compound C1CCSC2=NC=NC3=C2N=CN3CCCN2C(=O)N(C)C(=O)C1=C2 SJWPTBFNZAZFSH-UHFFFAOYSA-N 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 29
- 238000000034 method Methods 0.000 description 27
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000011056 performance test Methods 0.000 description 12
- 238000005245 sintering Methods 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 7
- 239000002861 polymer material Substances 0.000 description 6
- 239000004952 Polyamide Substances 0.000 description 5
- 239000004721 Polyphenylene oxide Substances 0.000 description 5
- 235000014113 dietary fatty acids Nutrition 0.000 description 5
- 239000000194 fatty acid Substances 0.000 description 5
- 229930195729 fatty acid Natural products 0.000 description 5
- 150000004665 fatty acids Chemical class 0.000 description 5
- 229920002647 polyamide Polymers 0.000 description 5
- 229920000570 polyether Polymers 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- OHBRHBQMHLEELN-UHFFFAOYSA-N acetic acid;1-butoxybutane Chemical compound CC(O)=O.CCCCOCCCC OHBRHBQMHLEELN-UHFFFAOYSA-N 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000000518 rheometry Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003034 coal gas Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
Description
浆料 | Pmpp | Isc | Uoc | FF | Rsh | Rs | Ncell |
实施例1 | 4.4352 | 8.8720 | 63.794 | 78.359 | 8.3505 | 0.00208 | 18.225 |
对比 | 4.4060 | 8.8187 | 62.863 | 79.478 | 6.3598 | 0.00256 | 18.105 |
浆料 | Pmpp | Isc | Uoc | FF | Rsh | Rs | Ncell |
实施例2 | 4.4541 | 8.8692 | 63.934 | 78.511 | 9.6801 | 0.00218 | 18.302 |
对比 | 4.4183 | 8.8088 | 62.977 | 79.644 | 8.9196 | 0.00273 | 18.155 |
浆料 | Pmpp | Isc | Uoc | FF | Rsh | Rs | Ncell |
实施例3 | 4.4491 | 9.0209 | 62.592 | 78.744 | 7.4496 | 0.00233 | 18.282 |
对比 | 4.4396 | 9.0085 | 62.502 | 78.851 | 6.3205 | 0.00232 | 18.243 |
浆料 | Pmpp | Isc | Uoc | FF | Rsh | Rs | Ncell |
实施例4 | 4.4201 | 9.0010 | 62.718 | 78.298 | 10.0252 | 0.00238 | 18.163 |
对比 | 4.4096 | 8.9934 | 62.707 | 78.191 | 6.4706 | 0.00224 | 18.120 |
Claims (7)
Priority Applications (1)
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CN201710704055.4A CN107658044B (zh) | 2017-08-16 | 2017-08-16 | 一种高背极拉力防隐裂的perc晶体硅太阳能电池背钝化银浆及其制备方法 |
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CN201710704055.4A CN107658044B (zh) | 2017-08-16 | 2017-08-16 | 一种高背极拉力防隐裂的perc晶体硅太阳能电池背钝化银浆及其制备方法 |
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CN107658044A true CN107658044A (zh) | 2018-02-02 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116978600A (zh) * | 2023-07-28 | 2023-10-31 | 广东南海启明光大科技有限公司 | 一种perc晶硅太阳能背面银浆及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006351530A (ja) * | 2005-06-07 | 2006-12-28 | E I Du Pont De Nemours & Co | アルミニウム厚膜組成物、電極、半導体デバイスおよびそれらを作製する方法 |
CN102903419A (zh) * | 2012-09-27 | 2013-01-30 | 广州市儒兴科技开发有限公司 | 一种晶体硅太阳电池正面银浆 |
CN106229031A (zh) * | 2016-07-05 | 2016-12-14 | 浙江光隆能源科技股份有限公司 | 一种高拉力防隐裂的太阳电池背面银浆及其制备方法 |
CN106887273A (zh) * | 2017-03-20 | 2017-06-23 | 北京市合众创能光电技术有限公司 | Perc晶体硅太阳能电池用背银浆料及其制备方法 |
-
2017
- 2017-08-16 CN CN201710704055.4A patent/CN107658044B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006351530A (ja) * | 2005-06-07 | 2006-12-28 | E I Du Pont De Nemours & Co | アルミニウム厚膜組成物、電極、半導体デバイスおよびそれらを作製する方法 |
CN102903419A (zh) * | 2012-09-27 | 2013-01-30 | 广州市儒兴科技开发有限公司 | 一种晶体硅太阳电池正面银浆 |
CN106229031A (zh) * | 2016-07-05 | 2016-12-14 | 浙江光隆能源科技股份有限公司 | 一种高拉力防隐裂的太阳电池背面银浆及其制备方法 |
CN106887273A (zh) * | 2017-03-20 | 2017-06-23 | 北京市合众创能光电技术有限公司 | Perc晶体硅太阳能电池用背银浆料及其制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116978600A (zh) * | 2023-07-28 | 2023-10-31 | 广东南海启明光大科技有限公司 | 一种perc晶硅太阳能背面银浆及其制备方法 |
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Denomination of invention: A back passivation silver paste for perc crystalline silicon solar cells with high back tension and anti crack and its preparation method Effective date of registration: 20210624 Granted publication date: 20200320 Pledgee: Hangzhou High-tech Financing Guarantee Co.,Ltd. Pledgor: HANGZHOU RIGHTSILVER ELECTRONIC MATERIAL Co.,Ltd. Registration number: Y2021330000656 |
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