CN107630185B - Regeneration method of wallboard in dry etching machine - Google Patents
Regeneration method of wallboard in dry etching machine Download PDFInfo
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- CN107630185B CN107630185B CN201710835385.7A CN201710835385A CN107630185B CN 107630185 B CN107630185 B CN 107630185B CN 201710835385 A CN201710835385 A CN 201710835385A CN 107630185 B CN107630185 B CN 107630185B
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Abstract
The invention discloses a regeneration method of an inner wall plate of a dry etching machine, which comprises the steps of sequentially carrying out sand blasting, anodic oxidation coating and plasma spraying yttrium oxide coating on the inner wall plate, then carrying out ultrasonic cleaning and drying to obtain the inner wall plate regenerated by coating. The invention obviously improves the service life and the working performance of the ceramic wallboard in the dry etching process through the synergistic cooperation of all regeneration steps, and has higher hardness, more excellent wear resistance, heat resistance, corrosion resistance and insulating property.
Description
Technical Field
The invention belongs to the technical field of film coating regeneration, and particularly relates to a regeneration method of a wallboard in a dry etching machine.
Background
At present, the flat panel display industry and the semiconductor industry are developed vigorously in China, but few enterprises are provided for manufacturing matched core electronic parts for the flat panel display industry and the semiconductor industry, particularly the domestic native industry is few and few, the flat panel display industry and the semiconductor industry face the competition of foreign manufacturers, particularly the price competition, and therefore suppliers with strong service capability and competitive price are urgently needed to find. At present, few suppliers are enterprises for daily, Korean and typhoon, but no domestic intermediate companies. The cleaning and regeneration of parts in the liquid crystal panel industry are mainly finished at abroad, only one cleaning and regeneration can be carried out at home, and only the semiconductor industry with smaller size of the matched parts can be realized at home, so that the ever-increasing domestic requirements can not be met at all. In the manufacturing processes of semiconductors, liquid crystal displays and the like, a dry etching process is used, and an inner wall plate of a dry etching machine is in a high-temperature high-vacuum environment during working and undergoes plasma sputtering, atmosphere corrosion and invasion. The inner wall plate is made of aluminum alloy material, in order to improve the service life and meet the working performance, an aluminum oxide film with the diameter of several to hundreds of microns is formed by aluminum anodic oxidation in the past, so that the insulation performance, the corrosion resistance, the wear resistance, the environmental corrosion resistance and the like of the inner wall plate are improved. However, the anodic oxidation effect of Al is not ideal, and an alumina film with a porous film with uneven film thickness is generated, and the performance of the alumina film cannot meet the harsh requirements of the current production environments of liquid crystal panels and semiconductor products.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a regeneration method of an inner wall plate of a dry etching machine, and aims to prolong the service life and improve the working performance of the inner wall plate of the dry etching machine.
In order to achieve the purpose, the invention adopts the technical scheme that:
a regeneration method of an inner wall plate of a dry etching machine comprises the steps of sequentially carrying out sand blasting, anodic oxidation coating and plasma spraying yttrium oxide coating on the inner wall plate, then carrying out ultrasonic cleaning and drying to obtain the inner wall plate regenerated by coating.
The recycling method further comprises the steps of sequentially pickling, washing and drying the inner wall plate before sand blasting.
The pickling time is 8-12 s.
The pressure of sandblasting is 0.1-0.2 Mpa, and the height of sandblasting is one meter.
The anodic oxidation coating is an aluminum oxide film with the thickness of 40-45 mu m plated on the inner wall plate workpiece.
The film thickness of the plasma spraying yttrium oxide coating film is 200-250 mu m.
The technological parameters of the plasma spraying yttrium oxide coating film are as follows: the spraying power is 28-30 KW, the main gas is argon, the auxiliary gas is helium, the carrier gas is argon, the pressures of the main gas, the auxiliary gas and the carrier gas are respectively 0.344-0.448 MPa, 0.345-0.379 MPa and 0.137-0.276 MPa, the spraying distance is 125-130 mm, the spraying scanning interval is set to be 2mm, and the spraying speed is set to be 900-1100 mm/sec.
And the non-spraying surface of the inner wall plate workpiece is coated by using an adhesive tape.
The invention has the beneficial effects that: according to the invention, Al is used2O3The film layer is used as a transition layer between the spraying layer and the inner wall plate substrate, so that the bonding strength of the coating is larger and more compact, the service life and the working performance of the ceramic wall plate in the dry etching process are obviously improved through the cooperative matching in each regeneration step, the hardness is higher, the wear resistance, the heat resistance, the corrosion resistance and the insulating performance are more excellent, the manufacturing process is safer and more environment-friendly, the film performance is excellent, the production cost is reduced, and the efficiency is improved.
Detailed Description
The following examples are included to provide further detailed description of the embodiments of the invention and to provide those skilled in the art with a more complete, concise and complete understanding of the principles and spirit of the invention, and to facilitate its practice.
A regeneration method of an inner wall plate of a dry etching machine comprises the steps of carrying out acid washing, water washing and drying on the inner wall plate, then carrying out sand blasting, anodic oxidation coating and plasma spraying yttrium oxide coating in sequence, and then carrying out ultrasonic cleaning and drying to obtain the inner wall plate regenerated by coating.
The following is a detailed description of specific preferred embodiments:
example 1
Firstly, the inner wall plate part of the dry etching machine is simply cleaned by using mixed acid liquid (HNO) with the concentration (volume fraction) of 19 percent312% and 7% of HF), immersing for a short time (about 10 s) to remove surface stains, performing secondary cleaning with pure water, and blow-drying the cleaned workpiece with an air gun. Then, the non-spraying surface of the workpiece of the inner wall plate is coated by a special spraying adhesive tape, then the inner wall plate is subjected to sand blasting by adopting artificial corundum, the sand blasting pressure is adjusted to 0.1Mpa, the sand blasting height (the vertical distance from a sand blasting gun head to the surface of the workpiece) is 1m, and the inner wall plate is firstly sprayed once, so that the roughness is more than 3.0 um. And after the sand blasting is finished, cleaning the inner wall plate workpiece by using pure water, and then drying the inner wall plate workpiece by using an air gun. Then, an anodic oxidation process is adopted to plate Al with the thickness of 41 mu m on the film coating surface of the workpiece of the inner wall plate2O3A film. Finally, the coating is coated by a special adhesive tape for spraying, so that the surface which does not need to be sprayed is completely shielded by the adhesive tape. Fixing the inner wall plate workpiece in a spraying chamber by sticking a film, and using Y2O3Plasma spraying is carried out on the powder, and the spraying process parameters are as follows: the spraying power is set to be 30KW, the main gas (Ar), the auxiliary gas (He) and the carrier gas (Ar) are respectively set to be 0.448Mpa, 0.345Mpa and 0.276Mpa, the spraying distance is set to be 130mm, the spraying scanning interval is set to be 2mm, the spraying speed is set to be 1000mm/sec, the spraying times are determined by the spraying film thickness, when the expected film thickness is 200-250 um, about 16 times of spraying are needed, the film thickness deposition rate is about 12-16 mu m/time, the early deposition rate is low, and when the film thickness exceeds 100 mu m, the deposition rate is close to stability. After the spraying is finished, lightly sprayAnd (5) removing the spraying adhesive tape. And repeating the steps to spray the other surfaces needing to be sprayed. And after all the surfaces needing to be sprayed are sprayed, carrying out ultrasonic cleaning on the inner wallboard workpiece, and finally drying.
Example 2
Firstly, the inner wall plate part of the dry etching machine is simply cleaned by using mixed acid liquid (HNO) with the concentration (volume fraction) of 19 percent312% and 7% of HF), immersing for a short time (about 10 s) to remove surface stains, performing secondary cleaning with pure water, and blow-drying the cleaned workpiece with an air gun. Then, the non-spraying surface of the workpiece of the inner wall plate is coated by a special spraying adhesive tape, then the inner wall plate is subjected to sand blasting by adopting artificial corundum, the sand blasting pressure is adjusted to 0.2Mpa, the sand blasting height (the vertical distance from a sand blasting gun head to the surface of the workpiece) is 1m, and the inner wall plate is firstly sprayed once, so that the roughness is more than 3.0 um. And after the sand blasting is finished, cleaning the inner wall plate workpiece by using pure water, and then drying the inner wall plate workpiece by using an air gun. Then, an anodic oxidation process is adopted to plate 45 mu m thick Al on the film coating surface of the workpiece of the inner wall plate2O3A film. Finally, the coating is coated by a special adhesive tape for spraying, so that the surface which does not need to be sprayed is completely shielded by the adhesive tape. Fixing the inner wall plate workpiece in a spraying chamber by sticking a film, and using Y2O3Plasma spraying is carried out on the powder, and the spraying process parameters are as follows: the spraying power is set to be 29KW, the main gas (Ar), the auxiliary gas (He) and the carrier gas (Ar) are respectively set to be 0.414MPa, 0.379MPa and 0.193MPa, the spraying distance is set to be 125mm, the spraying scanning interval is set to be 2mm, the spraying speed is set to be 1100mm/sec, the spraying times are determined by the spraying film thickness, when the expected film thickness is 200-250 um, about 16 times of spraying are needed, the film thickness deposition rate is about 12-16 mu m/time, the early deposition rate is low, and when the film thickness exceeds 100 mu m, the deposition rate is close to stability. After the spraying, the spraying adhesive tape is lightly removed. And repeating the steps to spray the other surfaces needing to be sprayed. And after all the surfaces needing to be sprayed are sprayed, carrying out ultrasonic cleaning on the inner wallboard workpiece, and finally drying.
The two embodiments are detected, the adhesive force between the coating and the substrate (inner wall plate) is up to 10-15 Mpa, the porosity is 5-6%, and the compactness and the corrosion resistance are good.
The present invention has been described above by way of example. It is to be understood that the specific implementations of the invention are not limited in this respect. Various insubstantial improvements are made by adopting the method conception and the technical scheme of the invention; the present invention is not limited to the above embodiments, and can be modified in various ways.
Claims (5)
1. The regeneration method of the inner wall plate of the dry etching machine is characterized in that the regeneration method comprises the steps of sequentially carrying out sand blasting, anodic oxidation aluminum oxide film plating and plasma spraying yttrium oxide film plating on the inner wall plate, then carrying out ultrasonic cleaning and drying to obtain the inner wall plate regenerated by film plating, wherein the process parameters of the plasma spraying yttrium oxide film plating are as follows: the spraying power is 28-30 KW, the main gas is argon, the auxiliary gas is helium, the carrier gas is argon, the pressures of the main gas, the auxiliary gas and the carrier gas are respectively 0.344-0.448 MPa, 0.345-0.379 MPa and 0.137-0.276 MPa, the spraying distance is 125-130 mm, the spraying scanning interval is set to be 2mm, and the spraying speed is set to be 900-1100 mm/sec; the regeneration method further comprises the step of sequentially carrying out acid washing, water washing and drying on the inner wall plate before sand blasting, wherein the pressure of the sand blasting is 0.1-0.2 Mpa, and the height of the sand blasting is one meter.
2. The method for regenerating the inner wall plate of the dry etching machine as claimed in claim 1, wherein the pickling time is 8-12 s.
3. The method for regenerating the inner wall plate of the dry etching machine as claimed in claim 1, wherein the anodic oxidation coating is an aluminum oxide film with a thickness of 40-55 μm on the inner wall plate workpiece.
4. The method for regenerating the inner wall plate of the dry etching machine as claimed in claim 1, wherein the thickness of the plasma-sprayed yttria coating film is 200 to 250 μm.
5. The method for regenerating the inner wall plate of the dry etching machine as claimed in claim 1, wherein the non-sprayed surface of the inner wall plate workpiece is coated with an adhesive tape.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109161839A (en) * | 2018-09-20 | 2019-01-08 | 芜湖通潮精密机械股份有限公司 | A kind of etching machine bench alumilite process component regeneration preparation process |
| CN109305824A (en) * | 2018-09-29 | 2019-02-05 | 芜湖通潮精密机械股份有限公司 | A kind of restorative procedure of dry etching component ceramic layer damage |
| CN109112458B (en) * | 2018-09-29 | 2020-11-20 | 芜湖通潮精密机械股份有限公司 | Regeneration process pretreatment method for dry etching lower electrode |
| CN109609888A (en) * | 2018-11-29 | 2019-04-12 | 沈阳富创精密设备有限公司 | A kind of plasma spray coating yttria coating preparation method for preventing boundary from falling off |
| CN109440052A (en) * | 2018-11-29 | 2019-03-08 | 沈阳富创精密设备有限公司 | A kind of preparation method of composite coating of atmospheric plasma spraying yttria coating |
| CN111993287A (en) * | 2020-07-31 | 2020-11-27 | 上海富乐德智能科技发展有限公司 | Regeneration method of anodic oxidation part in dry etching equipment for semiconductor |
| CN115803469A (en) * | 2021-06-28 | 2023-03-14 | 株式会社日立高新技术 | Regeneration method of inner wall member |
| CN113667919A (en) * | 2021-08-23 | 2021-11-19 | 苏州众芯联电子材料有限公司 | Regeneration process for lower electrode of LCD and AMOLED dry etching |
| CN115125468B (en) * | 2022-07-12 | 2023-07-18 | 合肥微睿光电科技有限公司 | Method for regenerating melt-shot wallboard in dry etching process |
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| DE3806174A1 (en) * | 1988-02-26 | 1989-09-07 | Siemens Ag | Method and apparatus for applying layers of high-temperature superconducting material to substrates |
| CN1034522C (en) * | 1995-04-18 | 1997-04-09 | 哈尔滨环亚微弧技术有限公司 | Plasma-reinforced electrochemical process for surface ceramicification and relevant product |
| JP4430266B2 (en) * | 2001-05-25 | 2010-03-10 | 東京エレクトロン株式会社 | Plasma processing vessel inner member and plasma processing apparatus |
| CN105274465B (en) * | 2015-11-17 | 2018-01-30 | 沈阳仪表科学研究院有限公司 | The renovation process of vacuum coating intracavitary part cleaning rough surface |
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