CN107622945A - Plasma-etching method, plasma-etching apparatus and substrate-placing platform - Google Patents

Plasma-etching method, plasma-etching apparatus and substrate-placing platform Download PDF

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Publication number
CN107622945A
CN107622945A CN201710574737.8A CN201710574737A CN107622945A CN 107622945 A CN107622945 A CN 107622945A CN 201710574737 A CN201710574737 A CN 201710574737A CN 107622945 A CN107622945 A CN 107622945A
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plasma
gas
substrate
etching
etching apparatus
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CN107622945B (en
Inventor
佐佐木芳彦
南雅人
藤永元毅
神户乔史
山涌纯
宇贺神肇
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Abstract

The present invention provides a kind of method of plasma processing that can import the dry maintenance period for cleaning and can extending process container.The plasma-etching method, plasma etching is carried out to the defined film being formed on substrate using plasma-etching apparatus, above-mentioned plasma-etching method includes：Selected processing gas so that in plasma etch process in above-mentioned plasma-etching apparatus, the step of reaction product of generation turns into the material that can do cleaning；The step of plasma etch process is carried out to above-mentioned defined film using previously selected processing gas in above-mentioned plasma-etching apparatus；With after the step of having carried out the above-mentioned carry out plasma etch process of the stipulated number more than once or twice, the step of using the plasma of dry clean gas to carrying out dry cleaning in the chamber of above-mentioned plasma-etching apparatus.

Description

Plasma-etching method, plasma-etching apparatus and substrate-placing platform
Technical field
The present invention relates to plasma-etching method, plasma-etching apparatus and the substrate-placing platform for it.
Background technology
For FPD (Flat Panel Display：Flat-panel monitor) thin film transistor (TFT) (TFT：Thin Film Transistor) by the substrates such as glass substrate while carrying out patterning one to grid or gate insulating film, semiconductor layer etc. While stack gradually and formed.
When forming TFT, such as the step of pair source electrode being connected with semiconductor layer or drain electrode are etched be present, to grid The step of being etched etc..Sometimes using metal films containing Al such as Ti/Al/Ti stacked films in source electrode and drain electrode, as now Etching gas use chlorine-containing gas, such as Cl2Gas (such as patent document 1).In addition, caused by order to tackle chlorine-containing gas Corrosion, supplies O into the chamber after being etched using chlorine-containing gas sometimes2Gas or O2Gas and CF4The fluorine type gas such as gas are carried out Suppress corrosion treatment.
In addition, as grid, film containing Mo is used sometimes, as etching gas now, such as uses SF6Gas and O2Gas The mixed gas (such as patent document 2) of body
But when etching process is repeated to multiple substrates, reaction product, which is attached in chamber, turns into deposit (deposit), it, which is stripped, to form particle and brings bad influence to product, so to open chamber with the defined cycle, use alcohol Wipe deposit, or with special decoction clean etc., it is necessary to carry out chamber clean (wet cleaning).
On the other hand, as described above, utilizing Cl2After the chlorine-containing gas such as gas are etched to metal film containing Al, to chamber Interior supply O2When gas and fluorine type gas, and utilize SF6Gas and O2When the mixed gas of gas is etched to film containing Mo, A large amount of generations cause the reaction product of the low-steam pressure of particle, and they, which are attached in chamber, forms deposit (deposit), leads It is that maintenance period shortens to cause the chamber clean cycle.
Therefore, in order to increase the maintenance period of plasma-etching apparatus, research is removed by the gas of supplying clean It is attached to chamber clean (dry cleaning) of the reaction product in chamber without open chamber.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2015-173159 publications
Patent document 2：Japanese Unexamined Patent Publication 201-48286 publications
The content of the invention
Technical problems to be solved are thought in invention
However it has been found that following problem, can not effectively be removed using dry cleaning and utilize plasma etching as described above The reaction product of the low-steam pressure of generation.
Moreover, when not loading substrate on substrate-placing platform and carrying out dry cleaning, the plasma of clean gas is done to electrostatic Sucker causes to damage, and may cause its lost of life.Therefore, it may be considered that mounting element glass carries out dry cleaning, but now causes Productivity declines.
Therefore, the technical problem to be solved in the present invention is, there is provided one kind can import dry cleaning and can extend place The method of plasma processing of the maintenance period of container is managed, even and if carrying out the dry life-span cleaned and also ensure that electrostatic chuck Plasma processing apparatus and the substrate-placing platform for it.
For solving the technical scheme of technical problem
In order to solve the above-mentioned technical problem, the first aspect of the present invention provides a kind of plasma-etching method, and it is utilized Plasma-etching apparatus carries out plasma etching, above-mentioned plasma-etching method to the defined film being formed on substrate It is characterised by, including：Selected processing gas is so as to obtain the plasma etch process in above-mentioned plasma-etching apparatus In, the step of reaction product of generation turns into the material that can do cleaning；Using pre- in above-mentioned plasma-etching apparatus The step of first selected processing gas carries out plasma etch process to above-mentioned defined film；With carrying out once or twice After the step of above-mentioned carry out plasma etch process of stipulated number above, using the plasma of dry clean gas to upper State the step of dry cleaning is carried out in the chamber of plasma-etching apparatus.
In the plasma-etching method of above-mentioned first aspect, above-mentioned dry clean gas during as above-mentioned dry cleaning, Used above-mentioned processing gas identical gas during using with above-mentioned plasma etching.
In the plasma-etching method of above-mentioned first viewpoint, above-mentioned defined film can be metal film containing Al, above-mentioned Processing gas can be chlorine-containing gas, and above-mentioned reaction product can be AlClx, and above-mentioned plasma-etching method can also wrap Include：After the above-mentioned plasma etching in having carried out above-mentioned plasma-etching apparatus, the substrate after processing is transported to list The after-treatment device solely set, utilizes O2Gas or O2Gas and fluoro-gas, the post processing for suppressing corrosion is carried out, it is above-mentioned The step of carrying out dry cleaning is carrying out the above-mentioned carry out plasma moment processing of the stipulated number more than once or twice Step and carried out after above-mentioned the step of being post-processed.Moreover, the above-mentioned chlorine-containing gas as above-mentioned processing gas can use Cl2Gas.
Above-mentioned metal film containing Al can use the source electrode for being used for forming thin film transistor (TFT) and the Ti/Al/Ti films of drain electrode.
In the plasma-etching method of above-mentioned first viewpoint, above-mentioned defined film can be Mo class material membranes, above-mentioned Processing gas can be fluoro-gas, and above-mentioned reaction product can be MoFx.Moreover, contain as the above-mentioned of above-mentioned processing gas Fluorine gas can be SF6Gas.
Above-mentioned Mo classes material membrane can be for forming the grid of thin film transistor (TFT) or the Mo films of photomask or MoW films.
The second aspect of the present invention provides a kind of plasma-etching apparatus, and it is used for as defined in being formed on substrate Film implements plasma etch process, and above-mentioned plasma-etching apparatus is characterised by, including：For storing the processing of substrate Container；The substrate-placing platform of substrate is loaded in above-mentioned process container；To supplying etching gas in above-mentioned process container and doing clear The gas supply mechanism of clean gas；To the exhaust gear being exhausted in above-mentioned process container；With the life in above-mentioned process container Into the plasma generating mechanism of above-mentioned etching gas and the plasma of above-mentioned dry clean gas, aforesaid substrate mounting table bag Include：Base material；And electrostatic chuck, it is arranged on above-mentioned base material, is had the dielectric layer being made up of ceramic sputtered films of bismuth and is arranged on The adsorption electrode of the inside of above-mentioned dielectric layer, above-mentioned dry clean gas are chlorine-containing gas, and the above-mentioned electricity of above-mentioned electrostatic chuck is situated between The mixing sputtered films of bismuth that matter layer is formed for the mixture of spraying plating aluminum oxide, yittrium oxide and silicon compound.
In the plasma-etching method of above-mentioned second viewpoint, form above-mentioned electrostatic chuck above-mentioned dielectric layer it is mixed Close in sputtered films of bismuth and preferably use silica or silicon nitride as silicon compound.The above-mentioned adsorption electrode of above-mentioned electrostatic chuck can be by Tungsten or molybdenum are formed.Above-mentioned dry clean gas can be Cl2Gas.
The third aspect of the present invention provides a kind of plasma-etching apparatus, and it is used for as defined in being formed on substrate Film implements plasma etch process, and above-mentioned plasma-etching apparatus is characterised by, including：For storing the processing of substrate Container；The substrate-placing platform of substrate is loaded in above-mentioned process container；To supplying etching gas in above-mentioned process container and doing clear The gas supply mechanism of clean gas；To the exhaust gear being exhausted in above-mentioned process container；With the life in above-mentioned process container Into the plasma generating mechanism of above-mentioned etching gas and the plasma of above-mentioned dry clean gas, aforesaid substrate mounting table bag Include：Base material；And electrostatic chuck, it is arranged on above-mentioned base material, is had the dielectric layer being made up of ceramic sputtered films of bismuth and is arranged on The adsorption electrode of the inside of above-mentioned dielectric layer, above-mentioned dry clean gas are fluoro-gas, and above-mentioned adsorption electrode is made up of aluminium.
In the plasma-etching method of above-mentioned 3rd viewpoint, the above-mentioned dielectric layer of above-mentioned electrostatic chuck can be by spraying The mixing sputtered films of bismuth or yittrium oxide for plating the mixture of aluminum oxide, yittrium oxide and silicon compound and being formed are formed.Above-mentioned dry cleaning gas Body can be SF6Gas.
In the plasma-etching method of above-mentioned second aspect and the third aspect, as above-mentioned etching gas, it can make With with above-mentioned dry clean gas identical gas.
The fourth aspect of the present invention provides a kind of substrate-placing platform, and it is used in plasma-etching apparatus hold in processing Mounting substrate in device, above-mentioned plasma-etching apparatus is in above-mentioned process container using etching gas to being formed at aforesaid substrate On defined film carry out plasma etching and using do clean gas plasma to being done in above-mentioned process container Cleaning, aforesaid substrate mounting table is characterised by, including：Base material；And electrostatic chuck, it is arranged on above-mentioned base material, have by The dielectric layer of ceramic sputtered films of bismuth composition and the adsorption electrode for the inside for being arranged on above-mentioned dielectric layer, above-mentioned dry clean gas are Chlorine-containing gas, the above-mentioned dielectric layer of above-mentioned electrostatic chuck is spraying plating aluminum oxide, the mixture of yittrium oxide and silicon compound and shape Into mixing sputtered films of bismuth.
The fifth aspect of the present invention provides a kind of substrate-placing platform, and it is used in plasma-etching apparatus in process container Interior mounting substrate, above-mentioned plasma-etching apparatus is in above-mentioned process container using etching gas to being formed on aforesaid substrate Defined film carry out plasma etching and using dry clean gas plasma to carried out in above-mentioned process container it is dry clearly Clean, aforesaid substrate mounting table is characterised by, including：Base material；And electrostatic chuck, it is arranged on above-mentioned base material, is had by making pottery Porcelain sputtered films of bismuth form dielectric layer and be arranged on above-mentioned dielectric layer inside adsorption electrode, above-mentioned dry clean gas be containing Fluorine gas, above-mentioned adsorption electrode are made up of aluminium.
Invention effect
According to the present invention, in the plasma etch process in plasma-etching apparatus, processing gas can be selected, To cause the reaction product of generation that by dry cleaning, and after plasma etch process, the dimension of process container can be extended Protect the cycle.
Electrostatic chuck can do to paired chloride plasma and the high structure of patience containing fluoro plasma, therefore even if Carry out the life-span that dry cleaning can also ensure that electrostatic chuck.
Brief description of the drawings
Fig. 1 is the sectional view of the structure for the substrate for representing the plasma processing method using embodiments of the present invention.
Fig. 2 is the general view for representing to implement the processing system of the processing method of first embodiment.
Fig. 3 is the sectional view for representing to be mounted in the plasma-etching apparatus of Fig. 2 processing system.
Fig. 4 is the skeleton diagram for representing to be mounted in the after-treatment device of Fig. 2 processing system.
Fig. 5 is the flow chart for the method for plasma processing for representing first embodiment.
Fig. 6 is to be denoted as processing gas to utilize Cl2Generated in chamber when gas is etched to metal film containing Al The skeleton diagram of reaction product.
Fig. 7 is to be denoted as processing gas to utilize Cl2Gas utilizes O after being etched to metal film containing Al2Gas or O2 Gas and CF4The skeleton diagram of the reaction product of generation in chamber when gas is post-processed.
Fig. 8 is the general view for representing to implement the processing system of the processing method of second embodiment.
Fig. 9 is to represent to be mounted in the sectional view of the plasma-etching apparatus of Fig. 8 processing system.
Figure 10 represents the flow chart of the method for plasma processing of second embodiment.
Figure 11 is to be denoted as processing gas to utilize SF6Generated in chamber when gas is etched to Mo class material membranes The skeleton diagram of reaction product.
Figure 12 is to be denoted as processing gas to utilize O2Gas and SF6Chamber when gas is etched to Mo class material membranes The skeleton diagram of the reaction product of interior generation.
Description of reference numerals
1：Glass substrate
2：Light shield layer
4：Polysilicon film
5：Gate insulating film
6：Grid
7：Interlayer dielectric
8a：Source electrode
8b：Drain electrode
10：Vacuum carrying room
20：Load lock chamber
30、90：Plasma-etching apparatus
40：After-treatment device
50：Vehicle
60：Transport mechanism
70：Vacuum transport mechanism
80：Control unit
100、200：Processing system
101：Process container
102：Dielectric walls
104：Chamber
111：Spray housing
113：High frequency antenna
115：High frequency electric source
12、120′、220：Processing gas feed mechanism
130：Substrate-placing platform
132、232：Electrostatic chuck
145、245：Dielectric layer
146、246：Adsorption electrode
160：Exhaust gear
S：Substrate.
Embodiment
Below, referring to the drawings, embodiments of the present invention are illustrated.
<Using the structure of the substrate of the method for plasma processing of embodiments of the present invention>
Fig. 1 is the sectional view of the structure for the substrate for representing the plasma processing method using embodiments of the present invention.
Substrate S has the structure on the glass substrate formed with top gate type TFT.Specifically, as shown in figure 1, in glass Formed with the light shield layer 2 being made up of Mo classes material (Mo, MoW) on glass substrate 1, thereon across dielectric film 3 formed with as partly leading The polysilicon film (p-Si films) 4 formed by polysilicon of body layer, thereon across gate insulating film 5 formed with by Mo classes material (Mo, MoW) the grid 6 formed, thereon formed with interlayer dielectric 7.Formed with contact hole on interlayer dielectric 7, in layer insulation Formed with the source electrode 8a and drain electrode 8b being connected via contact hole with p-Si films 4 on film 7.Source electrode 8a and drain electrode 8b are for example by successively The metal film containing Al for the Ti/Al/Ti structures that stacking titanium film, aluminium film, titanium film form is formed.Source electrode 8a and drain electrode 8b on formed with Such as the diaphragm (not shown) being made up of SiN film, it is transparent formed with being connected with source electrode 8a and drain electrode 8b on diaphragm Electrode (not shown).
<First embodiment>
First, first embodiment is illustrated.
In the first embodiment, with the metal film containing Al during the source electrode 8a for forming substrate S shown in Fig. 1 and drain electrode 8b Illustrated exemplified by etching process.Wherein, for formed source electrode 8a and drain 8b the metal film containing Al etching when, formed thereon Resist film (not shown) with predetermined pattern, plasma etching is carried out using it as mask.
[apparatus structure of the processing system used in first embodiment and plasma-etching apparatus etc.]
First, the apparatus structure of the processing system used in first embodiment and plasma-etching apparatus etc. is carried out Explanation.
Fig. 2 is the general view for the processing system for representing the processing method for implementing first embodiment, and Fig. 3 is to show Go out the sectional view for the plasma-etching apparatus being mounted in Fig. 2 processing system, Fig. 4 is to show to be mounted in Fig. 2 processing system The skeleton diagram of after-treatment device on system.
As shown in Fig. 2 processing system 100 is the processing system of multi-cavity cell-type, including vacuum carrying room 10, load lock chamber 20th, two plasma-etching apparatus 30 and after-treatment device 40.Plasma-etching apparatus 30 and after-treatment device 40 are being advised Handled under fixed reduced atmosphere.The flat shape of vacuum carrying room 10 is rectangular, 20, two plasmas of load lock chamber Processing unit 30 and after-treatment device 40 are connected to each wall portion of vacuum carrying room 10 via gate valve G.Outside load lock chamber 20 Side is configured with the substrate S of storage rectangle vehicle 50.
Transport mechanism 60 is provided between above-mentioned two vehicle 50, the transport mechanism 60, which has, to be arranged to two layers up and down Pick-up 61 (only illustrate one) and their pedestal 62 is supported in a manner of it integratedly can retreat and rotate.
Vacuum carrying room 10 can be maintained under defined reduced atmosphere, wherein as shown in Fig. 2 being provided with vacuum transporter Structure 60.Also, by the vacuum transport mechanism 70 in load lock chamber 20, two plasma-etching apparatus 30 and after-treatment devices Substrate S is transported between 40.Vacuum transport mechanism 70 is provided with the pedestal 71 that can be rotated and move up and down front and rear to be moved Dynamic two substrate carrying arms 72 (only illustrating one).
Load lock chamber 20 is used in the vehicle 50 in air atmosphere and the vacuum carrying room 10 in reduced atmosphere Between join substrate S, can switch between vacuum atmosphere and air atmosphere in the short time.Load lock chamber 20 is provided with up and down Two layers of substrate reception portion, substrate S is located by locator (not shown) in each substrate reception portion.
Plasma-etching apparatus 30 is used to be etched substrate S metal film containing Al, as shown in figure 3, for example with The airtight main body container 101 for the square tube shape being made up of aluminium that internal face was anodized.The main body container 101 with The mode that can be decomposed is assembled and is grounded.Main body container 101 is divided into top and the bottom by dielectric walls 102, and upside is to mark The antenna container 103 of antenna chamber, downside are the chamber (process container) 104 for marking process chamber.Dielectric walls 102 form chamber 104 roof, by Al2O3Formed Deng ceramics, quartz etc..
It is provided between the side wall 103a of antenna container 103 in main body container 101 and the side wall 104a of chamber 104 inwardly The bearing support 105 that side protrudes, dielectric walls 102 are placed with the bearing support 105.
In the lower portion of dielectric walls 102, the spray housing 111 of processing gas supply is embedded with.Spray housing 111 Set it is crosswise, using the girder construction from lower support dielectric walls 102.Spray housing 111 is in (is not schemed by multiple hanging members Show) be hung in main body container 101 top state.
The spray housing 111 is made up of conductive material, such as the aluminium that device inner surface or outer surface were anodized. Formed with horizontal-extending gas flow path 112, the gas flow path 112 and the multiple gas extended downwards in the spray housing 111 Body tap 112a is connected.
On the other hand, in the upper face center of dielectric walls 102, it is provided with a manner of being connected with the gas flow path 112 Gas supply pipe 121.The gas supply pipe 121 penetrates from the top of main body container 101 to its outside, branches into branched pipe 121a、121b.Branched pipe 121a and supply chlorine-containing gas such as Cl2The chlorine-containing gas supply source 122 of gas connects.In addition, point Branch pipe 121b and Ar gas, N of the supply as purification gas or diluent gas2The inactive gas of the inactive gas such as gas supplies Connected to source 123.Chlorine-containing gas is used as etching gas and dry clean gas.Branched pipe 121a, 121b are provided with mass flow The flow controllers such as controller or valve system.
Gas supply pipe 121, branched pipe 121a, 121b, chlorine-containing gas supply source 122, inactive gas supply source 123 with And flow controller and valve system form processing gas feed mechanism 120.
In plasma-etching apparatus 30, the chlorine-containing gas supplied from processing gas feed mechanism 120 is supplied to spray In housing 111, it is discharged to from the gas discharge hole 112a of its lower surface in chamber 104, carries out the erosion of the substrate S metal film containing Al Quarter or the dry cleaning of chamber 104.Chlorine-containing gas is preferably chlorine (Cl2) gas, but boron chloride (BCl can also be used3) gas, Carbon tetrachloride (CCl4) gas etc..
High frequency (RF) antenna 113 is provided with antenna container 103.High frequency antenna 113 is by will be by good conductors such as copper, aluminium The antenna line 113a configurations that form of metal circlewise, the arbitrary shape that uses in the prior art such as vortex shape and form.Also may be used To be the multiple antennas using multiple antenna parts.High frequency antenna 113 passes through the distance piece 117 and dielectric walls that are made up of insulating element 102 separate.
Antenna line 113a terminal 118 is connected with the power supply part 116 extended to the top of antenna container 103.Power supply The upper end of part 116 is connected with supply lines 119, and supply lines 119 is connected with adaptation 114 and high frequency electric source 115.Moreover, by from High frequency electric source 115 forms sensing to the RF power that the supply frequency of high frequency antenna 113 is, for example, 13.56MHz in chamber 104 Electric field, by the induction field, the processing gas supplied from spray housing 111 is in plasma, generation inductively wait from Daughter.
Bottom wall in chamber 104, the distance piece 134 being made up of insulator in the shape of a frame is provided with mounting substrate G Substrate-placing platform 130.Substrate-placing platform 130 includes being arranged on base material 131 on above-mentioned distance piece 134, is arranged on base The lateral wall insulation part 133 of electrostatic chuck 132 and the side wall of covering base material 131 and electrostatic chuck 132 on material 131.Base material 131 and electrostatic chuck 132 be in rectangle corresponding with substrate S shape, substrate-placing platform 130 be integrally formed into quadrangle tabular or Column.Distance piece 134 and lateral wall insulation part 133 are made up of insulating ceramicses such as aluminum oxide.
Electrostatic chuck 132 includes being formed at the dielectric layer 145 being made up of ceramic sputtered films of bismuth on the surface of base material 131, set Put the adsorption electrode 146 in the inside of dielectric layer 145.Adsorption electrode 146 can use tabular, membranaceous, clathrate, netted etc. Various modes.Adsorption electrode 146 is connected via supply lines 147 with dc source 148, and direct current is applied with adsorption electrode 146 Pressure.Power supply to adsorption electrode 146 is turned on and off with switch (not shown).By applying directly to adsorption electrode 146 Voltage is flowed, Coulomb force is produced or Johnson draws the electrostatic adsorption forces such as Buick power to carry out sorbing substrate S.
The dielectric layer 145 of electrostatic chuck 132 is made up of mixing sputtered films of bismuth.Mixing sputtered films of bismuth passes through spraying plating aluminum oxide (Al2O3), yittrium oxide (Y2O3), the mixture of silicon compound and formed.Y2O3In material, plasma resistance is high, Al2O3It is right The chemical resistance of chlorine-containing gas is high, and silicon compound is vitreous, is had by filling Y2O3And Al2O3Grain circle and it is fine and close The effect of change, so mixing sputtered films of bismuth is to Cl2The plasma resistance of the chlorine-containing gas such as gas is high.It is excellent as mixing sputtered films of bismuth Elect as and utilize the silica (SiO as silicon compound2) Al2O3·Y2O3·SiO2Film.Alternatively, it is also possible to which profit is suitably used It is used as (the Si of silicon compound3N4) Al2O3·Y2O3·Si3N4Film.The adsorption electrode 146 of electrostatic chuck 132 is by using in the past Tungsten (W) or molybdenum (Mo) form.The patience of their plasmas to chlorine-containing gas is high.
Base material 131 is connected via supply lines 151 with biasing the high frequency electric source 153 of application.In addition, in supply lines 151 Adaptation 152 is provided between base material 131 and high frequency electric source 153.High frequency electric source 153 is used to introduce to the substrate S on base material 131 Ion, use the frequency of 50kHz~10MHz scopes, for example, 3.2MHz.
In addition, in the base material 131 of substrate-placing platform 130, the temperature adjuster of the temperature for control base board S is provided with Structure and temperature sensor (not shown).Used in addition, being provided with and being supplied on substrate-placing platform 130 in the state of mounting substrate S (do not scheme in the heat-conducting gas to be conducted heat between substrate S and substrate-placing platform 130, such as the heat-conducting gas supply mechanism of He gases Show).Moreover, in substrate-placing platform 130, be provided with the upper surface of electrostatic chuck 132 can protrude and submerge be used to carry out Multiple lifter pins (not shown) of substrate S handing-over, substrate S handing-over for from the upper surface of electrostatic chuck 132 upward Lifter pin in the state of protrusion is carried out.
It is provided with for substrate S to be taken out of to the moving mouth 155 moved into chamber 104, removes in the side wall 104a of chamber Going out to move into mouth 155 can be opened and closed by gate valve G.By opening gate valve G, by the vacuum transport mechanism being arranged in vacuum carrying room 10 70 can take out of via moving mouth 155 and move into substrate S.
In the edge of the bottom wall of chamber 104 or corner portion formed with multiple exhaust outlets 159 (only illustrating two), in each exhaust Exhaust portion 160 is provided with mouth 159.Exhaust portion 160 include be connected with exhaust outlet 159 exhaust pipe arrangement 161, by adjustment exhaust The aperture of pipe arrangement 161 controls the automatic pressure control valve (APC) 162 of the pressure in chamber 104 and via exhaust pipe arrangement 161 to chamber The vavuum pump 163 being exhausted in room 104.Then, by vavuum pump 163 to being vented in chamber 104, in plasma etch process In, the aperture by adjusting automatic pressure control valve (APC) 162 will set in chamber 104, maintain defined vacuum gas Atmosphere.
After-treatment device 40 is used for after being etched to substrate S metal film containing Al, carries out for suppressing after corroding Processing.As shown in figure 4, there is after-treatment device 40 processing gas for supplying the gas different from plasma-etching apparatus 30 to supply Give the alternate process gas supply mechanism 120 of mechanism 120 ' come.Structure in addition, but and plasma are eliminated in Fig. 4 The structure of Etaching device 30 is identical.In addition, in the following description, phase is marked for the identical part of plasma-etching apparatus 30 Illustrated with reference.
The processing gas feed mechanism 120 ' of after-treatment device 40 includes gas supply pipe 121 ', in main body container 101 Upper outer is from the branched pipe 121a ' of the branch of gas supply pipe 121 ', 121b ', 121c ' and the confession being connected with branched pipe 121a ' To O2The O of gas2Gas supply source 124, be connected with branched pipe 121b ' supply fluoro-gas fluoro-gas supply source 125, The supply being connected with branched pipe 121c ' is as purification gas or Ar gases, the N of diluent gas2The inactive gas such as gas are not Active gas supply source 126.Gas supply pipe 121 ' is as the gas supply pipe 121 of plasma-etching apparatus 30, with spray The gas flow path 112 of leaching housing 111 connects (reference picture 3).Branched pipe 121a ', 121b ', 121c ' are provided with mass flow control The flow controllers such as device and valve system.
In after-treatment device 40, the O come from the supply of processing gas feed mechanism 120 '2Gas or O2Gas and fluoro-gas It is discharged to via spray housing 111 in chamber 104, carries out the corrosion suppression processing of the metal film containing Al after substrate S etching.Make For fluoro-gas, carbon tetrafluoride (CF can be suitably used4), but sulfur hexafluoride (SF can also be used6) etc..
In addition, in after-treatment device 40, the dielectric layer 145 of electrostatic chuck 132 need with to chlorine-containing gas etc. The patience of gas ions, thus can make dielectric layer 145 due to prior art it is the same contain Al2O3Or Y2O3Sputtered films of bismuth form. In addition, after-treatment device 40 only carries out corroding suppression processing, therefore electrostatic chuck 132 can be not provided with.
Processing system 100 also has control unit 80.Control unit 80 is made up of the computer with CPU and storage part, processing System 100 each structural portion (vacuum carrying room 10, load lock chamber 20, plasma-etching apparatus 30, after-treatment device 40, Each structural portion of transport mechanism 60, vacuum transport mechanism 70) through controlling based on the processing scheme (program) being stored in storage part Handled as defined in carrying out.Processing scheme is stored in the storage mediums such as hard disk, CD, semiconductor memory.
[method of plasma processing of first embodiment]
Then, the flow chart of reference picture 5, the plasma for the first embodiment that the processing system 100 to more than is carried out Processing method illustrates.
Herein, the conduct carried out by processing system 100 for forming the source electrode 8a being formed on substrate S and the 8b that drains contains Al The plasma etch process of the Ti/Al/Ti films of metal film.
First, in the plasma etch process in plasma-etching apparatus 30, processing gas is selected, to give birth to Into reaction product turn into and can do the material of cleaning.(step 1).
Specifically, in the present embodiment, as processing gas, chlorine-containing gas, such as Cl are selected2Gas.Using containing When chlorine body carries out plasma etching to Ti/Al/Ti films, as shown in fig. 6, AlClx is mainly generated as reaction product, its A part, which is attached on chamber wall, turns into deposit (deposit), and AlClx vapour pressure is high, can be removed by dry cleaning.
On the other hand, as prior art, Cl is utilized2After gas is etched to Ti/Al/Ti films, in same chamber When interior suppress the post processing of corrosion, as shown in fig. 7, supplying O as post-treatment gas2Gas carries out corona treatment When, the AlClx and O of attachment2Gas is reacted, and the AlOx of low-steam pressure is produced in chamber, and in order to further improve Corrosion-suppressing effect, except O2Outside gas, fluoro-gas, such as CF are also supplied4When, in chamber in addition to AlOx, also production is same The AlFx of sample low-steam pressure.These AlOx and AlFx steam forces down, so non-volatile, be attached on chamber wall easily become it is heavy Product thing (deposit).However, turning into particle when they are stripped, bad influence is produced to product.Moreover, their stability are high, it is difficult To be removed by dry cleaning.
Therefore, in the present embodiment, merely with the chlorine-containing gas (Cl as etching gas2Gas) it is used as plasma The processing gas of substrate S in Etaching device 30 so that generation can do the AlClx of cleaning as reaction generation in chamber Thing, form particle without generation and be difficult to the AlOx and AlFx removed.
So selected plasma etching when processing gas after, to be formed on substrate S as the metal film containing Al Ti/Al/Ti films, using previously selected processing gas it is chlorine-containing gas by plasma-etching apparatus 30, such as Cl2Gas is real Apply plasma etch process (step 2).
Hereinafter, the corona treatment of step 2 is specifically described.
Substrate S is taken out from vehicle 50 by transport mechanism 60, is transported to load lock chamber 20, it is true in vacuum carrying room 10 Empty transport mechanism 70 receives substrate S from load lock chamber 20, and is transported to plasma-etching apparatus 30.
In plasma-etching apparatus 30, first, it will be adjusted to by vavuum pump 163 in chamber 104 and vacuum carrying room The pressure of 10 matchings, open gate valve G, moves into substrate S in chamber 104 from moving mouth 155 by vacuum transport mechanism 70, will Substrate S is positioned on substrate-placing platform 130.After vacuum transport mechanism 70 is exited into chamber 104, closing gate valve G.
In this condition, the pressure in chamber 104 is adjusted to defined vacuum by automatic pressure control valve (APC) 162 Degree, and supplied into chamber as etching gas via spray housing 111 from processing gas feed mechanism 120 and contain chlorine Body, such as Cl2Gas is as processing gas.In addition to chlorine-containing gas, as diluent gas, Ar gases etc. can also be supplied and do not lived Sprinkle gas.
Now, substrate S is adsorbed by electrostatic chuck 132, and temperature adjustment is carried out by thermoregulation mechanism is (not shown).
Then, such as 13.56MHz high frequency is applied to high frequency antenna 113 from high frequency electric source 115, thus, across dielectric Wall 102 produces uniform induction field in chamber 104.Using the induction field so formed, generate the grade of chlorine-containing gas from Daughter.The highdensity inductively coupled plasma so generated is etched to the substrate S i.e. Ti/Al/Ti of metal film containing Al.
Now, in plasma-etching apparatus 30, as described above as reaction product generation AlClx, one part Wall portion being attached in chamber 104 etc..On the other hand, AlOx and AlFx is hardly generated.
Then, the Ti/Al/Ti films as the metal film containing Al of the substrate S after plasma etching, by after-treatment device 40, utilize O2Gas or O2Gas and fluoro-gas, such as CF4Carry out the post processing (step 3) for suppressing corrosion.
Below, the post processing to step 3 is specifically described.
Substrate S after removing etching process from plasma-etching apparatus 30 by vacuum transport mechanism 70 is transported to post processing Device 40.
In after-treatment device 40, as plasma-etching apparatus 30, substrate S is moved into chamber 104, is positioned in On substrate-placing platform 130, the pressure in chamber 104 is adjusted to defined vacuum, and from processing gas feed mechanism 120 ' via spray housing 111, O is supplied into chamber 1042Gas or O2Gas and fluoro-gas, such as CF4Gas is as at Process gases.In addition, as diluent gas, the inactive gas such as Ar can also be supplied.
Then, as plasma-etching apparatus 30, the O as post-treatment gas is generated by induction field2Gas or O2The plasma of gas and fluoro-gas, the inductively coupled plasma so generated be etched after conduct metal containing Al The corrosion suppression processing of the Ti/Al/Ti films of film.
Now, in after-treatment device 40, without etching process, the yield of reaction product is few.
The base after being post-processed in after-treatment device 40 is taken out from the chamber 104 of after-treatment device 40 by vacuum transport mechanism 70 Plate S, is transported to load lock chamber 20, and vehicle 50 is returned to by transport mechanism 60.
In this plasma etch process (step 2) and post processing for having carried out the stipulated number more than once or twice After (step 3), the dry cleaning treatment (step 4) in the chamber 104 of plasma-etching apparatus 30 is carried out.
Dry cleaning is not in the state of substrate S is positioned on substrate-placing platform 130, into chamber 104, with plasma Etching gas when body etches equally supplies chlorine-containing gas such as Cl2Gas is as dry clean gas, during by plasma etching Same inductively coupled plasma is carried out.
By the dry cleaning, the AlClx being attached on the chamber 104 of plasma-etching apparatus 30 is removed.That is, exist In plasma-etching apparatus 30, without utilizing O as prior art2Gas or O2The corrosion of gas and fluoro-gas Suppression is handled, so not generating the AlOx and AlFx for being difficult to remove by dry cleaning as reaction product, can do cleaning.
In addition, in dry cleaning, substrate S is not loaded on substrate-placing platform 130, substrate S not on electrostatic chuck 132, because This directly acts on electrostatic chuck 132 as the plasma of the chlorine-containing gas of dry clean gas.
In the prior art, substrate S will not be placed in electrostatic by plasma-etching apparatus without dry cleaning Corona treatment, the dielectric layer Y of electrostatic chuck are carried out in the state of sucker2O3And Al2O3Sputtered films of bismuth be enough. It has however been found that：When in dry cleaning, the plasma of chlorine-containing gas directly acts on, if dielectric layer is Y2O3And Al2O3Spraying plating It can cause to damage if film, the life-span is possible to shorten.In order to solve this problem, in dry cleaning, it may be considered that carried in substrate Mounting is put on platform 130 as carrying out doing cleaning in the state of the element glass of dummy substrate, but in this case, is occurred plain glass The step of glass carrying-in/carrying-out plasma-etching apparatus 30, productivity is caused to decline.
Therefore, in the present embodiment, the dielectric layer 145 as electrostatic chuck 132, uses spraying plating Al2O3、Y2O3With The mixture of silicon compound and the mixing sputtered films of bismuth formed.Y2O3High, the Al in material plasma patience2O3To chlorine-containing gas Chemical resistance it is high, and silicon compound is used as the nature of glass, with by Y2O3And Al2O3Grain circle it is embedding and be densified effect, institute To mix sputtered films of bismuth to Cl2The patience of the plasma of the chlorine-containing gas such as gas is high, and need not load plain glass in dry cleaning Glass, it becomes possible to kept for the desired life-span.
As described above, as mixing sputtered films of bismuth, the silica (SiO as silicon compound is preferably utilized2) Al2O3· Y2O3·SiO2Film.(the Si as silicon compound is utilized alternatively, it is also possible to be suitably used3N4) Al2O3·Y2O3·Si3N4 Film.The adsorption electrode 146 of electrostatic chuck 132 is made up of the tungsten (W) or molybdenum (Mo) for starting just to use in the past, is shown to containing chlorine The high patience of the plasma of body.
In fact, to Al2O3With mixing sputtered films of bismuth (Al2O3·Y2O3·SiO2) compare to the Cl as chlorine-containing gas2Gas The overburden amount of the plasma of body.As a result, normalized Al is carried out as 1 using the overburden amount for mixing sputtered films of bismuth2O3Overburden amount For 9, confirm that mixing sputtered films of bismuth is high to the patience of the plasma of chlorine-containing gas.
So, after the plasma etch process (step 2) and post processing (step 3) for carrying out stipulated number, repeatedly When carrying out the circulation of dry cleaning (step 4), the deposit that is attached in the chamber 104 of plasma-etching apparatus 30 (deposit) start to be stripped.Therefore, after this circulation of stipulated number is repeated, open chamber 104, chamber is carried out Clean (step 5).Chamber clean by using alcohol wipe deposit or with special decoction clean etc. mode carry out.
As described above, in the present embodiment, in the etching process of plasma-etching apparatus 30, processing substrate S's Processing gas is only with the chlorine-containing gas as etching gas, such as Cl2Gas, and in the after-treatment device being separately provided in addition Carry out in the prior art carrying out in same chamber after the etching in 40 utilizes O for what corrosion suppressed2Gas or O2Gas and contain The corona treatment of fluorine gas so that the reaction product to be generated can be by dry cleaning.Therefore, at plasma etching During reason, the deposit (deposit) generated in chamber only has the AlClx of high-vapor-pressure, the AlOx without generating low-steam pressure And AlFx.Therefore, the deposit (deposit) itself in chamber can be reduced compared with prior art, and it is heavy in chamber Product thing (deposit) can be removed by dry cleaning, can significantly be lengthened the cycle for the chamber clean that open chamber is carried out, that is, be tieed up Protect the cycle.
In addition, contain chlorine when the dielectric layer 145 of the electrostatic chuck 132 in plasma-etching apparatus 30 is to dry cleaning Body has patience, therefore, can also ensure that during dry cleaning the life-span of electrostatic chuck.
<Second embodiment>
Then, second embodiment is illustrated.
In the present embodiment, with the erosion of the Mo class material membranes when grid 6 or light shield layer 2 that form substrate S shown in Fig. 1 Illustrated exemplified by quarter processing.Wherein, during etching for the Mo class material membranes for forming grid 6 or light shield layer 2, tool is formed thereon There is the resist film (not shown) of predetermined pattern, plasma etching is carried out using it as mask.
[apparatus structure of the processing system used in second embodiment and plasma-etching apparatus etc.]
First, the apparatus structure of the processing system used in second embodiment and plasma-etching apparatus etc. is carried out Explanation.
Fig. 8 is the general view for representing to implement the processing system of the processing method of second embodiment.Fig. 9 is to represent to take It is loaded in the sectional view of the plasma-etching apparatus of Fig. 8 processing system.
As shown in figure 8, processing system 200 is configured to the place of the multi-chamber type substantially as Fig. 2 processing system 100 Reason system.The processing system 200 of present embodiment is provided with three plasma-etching apparatus 90 to substitute two plasmas Etaching device 30 and after-treatment device 40 are identical with Fig. 2 structure of processing system 100 in addition to this point.Other structures and Fig. 2 It is identical, therefore mark same reference numerals and omit the description.
Plasma-etching apparatus 90 is used to be etched substrate S Mo class material membranes, as shown in figure 9, being provided with place Process gases feed mechanism 220 carrys out alternate process gas supply mechanism 120, is provided with electrostatic chuck 232 to substitute electrostatic chuck 132, it is identical with Fig. 3 structure of plasma-etching apparatus 30 in addition to this is 2 points.Pair therefore, mark phase with Fig. 3 identicals structure Isolabeling, omit the description.
Processing gas feed mechanism 220 include gas supply pipe 221, main body container 101 upper outer from gas supply The SF of branched pipe 221a, 221b to the branch of pipe 221, the supply being connected with branched pipe 221a as fluoro-gas6SF6Gas Supply source 222 and be connected with branched pipe 221b supply as purification gas or Ar gases, the N of diluent gas2Gas etc. is not lived Sprinkle the inactive gas supply source 223 of gas.The gas of gas supply pipe 221 and Fig. 3 plasma-etching apparatus 30 supplies As pipe 121, it is connected with the gas flow path 112 for spraying housing 111.Fluoro-gas is used as etching gas and dry clean gas.Separately Outside, as fluoro-gas, except SF6Outside gas, CF can also be used4Or NF3。
Electrostatic chuck 232 includes being formed at the dielectric layer 245 being made up of ceramic sputtered films of bismuth on the surface of base material 131, set Put the adsorption electrode 246 in the inside of dielectric layer 245.Adsorption electrode 246 can have tabular, membranaceous, clathrate, netted etc. Various modes.Adsorption electrode 246 is connected via supply lines 147 with dc source 148, and adsorption electrode 246 is applied in DC voltage. Power supply to adsorption electrode 246 is turned on and off by switching (not shown).By applying direct current to adsorption electrode 246 Pressure, produce Coulomb force, Johnson draws the electrostatic adsorption forces such as Bake power so as to sorbing substrate S.
The dielectric layer 245 of electrostatic chuck 232 is by passing through spraying plating aluminum oxide (Al2O3), yittrium oxide (Y2O3), silicon compound Mixture and the mixing sputtered films of bismuth or Y that are formed2O3Form.In addition, the adsorption electrode 246 of electrostatic chuck 232 is by aluminium (Al) structure Into.Form the aluminum oxide (Al of dielectric layer 2452O3) and yittrium oxide (Y2O3) and silicon compound mixture and Y2O3And form The Al of adsorption electrode 246 is to the SF as fluorine type gas6Plasma patience it is high.
[method of plasma processing of second embodiment]
Then, the plasma for the second embodiment that processing system 200 of the flow chart of reference picture 10 to more than is carried out Processing method illustrates.
Herein, carry out the Mo class material membranes being formed on substrate S by processing system 200, for example, the grade of Mo films or MoW films from Daughter etching process.
First, in the plasma etch process in plasma-etching apparatus 90, processing gas is selected, to give birth to Into reaction product turn into and can do the material of cleaning.(step 11).
Specifically, in the present embodiment, as processing gas, the SF as fluoro-gas is selected6Gas.Utilize SF6 It is as shown in figure 11, raw as reaction product when gas carries out plasma etching to the Mo classes such as Mo films or MoW films material membrane Into MoFx, one part, which is attached on chamber wall, turns into deposit (deposit), and MoFx vapour pressure is high, can pass through dry cleaning Remove.
On the other hand, as prior art, SF is utilized6Gas and O2When gas is etched to Mo class material membranes, such as scheme Shown in 12, as reaction product, in addition to MoFx, MoFxOy and MoOx is also produced.Wherein MoOx steam forces down, so not Volatilization, is attached on chamber wall and easily becomes deposit (deposit).However, turning into particle when they are stripped, product is produced Raw bad influence.Moreover, MoOx stability is high, it is difficult to is removed by dry cleaning.
Therefore, in the present embodiment, merely with the SF as fluoro-gas6Gas is as plasma-etching apparatus 90 In substrate S processing gas so that in chamber generation can do cleaning MoFx be used as reaction product, without generation shape Into particle and it is difficult to the MoOx removed.
So selected plasma etching when processing gas after, to the Mo class material membranes being formed on substrate S, by wait from Daughter Etaching device 90 utilizes the SF as previously selected processing gas6Gas implements plasma etch process (step 12)。
Hereinafter, the corona treatment of step 12 is specifically described.
Substrate S is taken out from vehicle 50 by transport mechanism 60, is transported to load lock chamber 20, it is true in vacuum carrying room 10 Empty transport mechanism 70 receives substrate S from load lock chamber 20, and is transported to plasma-etching apparatus 90.
In plasma-etching apparatus 90, the pressure that is matched with vacuum carrying room 10 will be adjusted in chamber 104, it is open Gate valve G, substrate S is moved into chamber 104 from moving mouth 155 by vacuum transport mechanism 70, substrate S is positioned in into substrate carries Put on platform 130.After vacuum transport mechanism 70 is exited into chamber 104, closing gate valve G.
In this condition, the pressure in chamber 104 is adjusted to defined vacuum by automatic pressure control valve (APC) 162 Degree, and from processing gas feed mechanism 220 via spray housing 111, SF of the supply as fluoro-gas into chamber 1046 Gas is as processing gas.Except SF6Outside gas, as diluent gas, the inactive gas such as Ar gases can also be supplied.
Now, substrate S is adsorbed by electrostatic chuck 232, and temperature adjustment is carried out by thermoregulation mechanism is (not shown).
Then, such as 13.56MHz high frequency is applied to high frequency antenna 113 from high frequency electric source 115, thus, via dielectric Wall 102 produces uniform induction field into chamber 104.Using the induction field so formed, SF is generated6The plasma of gas Body.The highdensity inductively coupled plasma so generated is etched to substrate S Mo class material membranes.
Now, in plasma-etching apparatus 90, as described above as reaction product generation MoFx, it is attached to chamber Wall portion in 104 etc..On the other hand, MoOx is hardly generated.
After the plasma etch process that step 12 is carried out in plasma-etching apparatus 90, by vacuum transport mechanism 70 Substrate S is taken out, transports to load lock chamber 20, vehicle 50 is returned to by transport mechanism 60.
After this plasma etch process (step 12) of the stipulated number more than once or twice has been carried out, carry out Dry cleaning treatment (step 13) in the chamber 104 of plasma-etching apparatus 90.
Dry cleaning is not in the state of substrate S is positioned on substrate-placing platform 130, into chamber 104 as dry clear Clean gas, as etching gas during plasma etching, supply fluoro-gas, i.e. SF6Gas, during by plasma etching Same inductively coupled plasma is carried out.
By the dry cleaning, the MoFx being attached on the chamber 104 of plasma-etching apparatus 90 is removed.That is, exist In plasma-etching apparatus 90, the O utilized in the prior art is free of as etching gas2Gas, so as reaction generation Thing does not generate the MoOx for being difficult to remove by dry cleaning, can do cleaning.
In addition, in dry cleaning, substrate S is not loaded on substrate-placing platform 130, substrate S not on electrostatic chuck 232, because This is as the SF for doing clean gas6The plasma of gas directly acts on electrostatic chuck 132.
In the prior art, substrate S will not be placed in without dry cleaning in plasma-etching apparatus Corona treatment, the dielectric layer Y of electrostatic chuck are carried out in the state of electrostatic chuck2O3And Al2O3Sputtered films of bismuth, absorption Electrode is enough with W or Mo.It has however been found that：Even if SF during dry cleaning as fluoro-gas6The plasma of gas is direct Electrostatic chuck is acted on, the Y as dielectric layer2O3And Al2O3Sputtered films of bismuth also there are patience, but the sealing pores of sputtered films of bismuth Material is removed by plasma, and plasma and fluoro-gas reach adsorption plane, and adsorption electrode can cause to damage with if W or Mo Wound, the life-span of electrostatic chuck are possible to shorten.In order to solve this problem, in dry cleaning, it may be considered that in substrate-placing platform Mounting but in this case, occurs removing element glass as carrying out doing cleaning in the state of the element glass of dummy substrate on 130 The step of entering to take out of plasma-etching apparatus 90, causes productivity to decline.
Therefore, in the present embodiment, the dielectric layer 245 as electrostatic chuck 232, uses Al.Al is than W and MO to making For the SF of fluoro-gas6The patience of the plasma of gas is high, and need not load element glass in dry cleaning, with regard to that can be kept for the phase The life-span of prestige.
Moreover, spraying plating aluminum oxide (Al2O3), yittrium oxide (Y2O3) and silicon compound mixture and the mixing spraying plating that is formed Film Y2O3To the SF as fluoro-gas6The patience of the plasma of gas is high, therefore except using Al as adsorption electrode 246 Outside, using mixing sputtered films of bismuth or Y2O3As dielectric layer 245, thus, it is possible to further improve to SF6The plasma of gas Patience.
In fact, the material as adsorption electrode, the SF for fluoro-gas is compared to W, Mo and Al6The grade of gas from The overburden amount of daughter.As a result, being 10 by 1 overburden amount for having carried out normalized W and Mo of Al overburden amount, confirm Al to making For the SF of fluoro-gas6The patience of the plasma of gas is high.In addition, the material as dielectric layer, to Al2O3、Y2O3With it is mixed Close sputtered films of bismuth (Al2O3·Y2O3·SiO2) compare to the SF as fluoro-gas6The overburden amount of the plasma of gas.As a result It is that normalized Al has been carried out as 1 using the overburden amount for mixing sputtered films of bismuth2O3Overburden amount be 3, Y2O3For 1, mixing spraying plating is confirmed Film and Y2O3To the SF as fluoro-gas6The patience of the plasma of gas is high.
So, after the plasma etch process (step 12) of stipulated number has been carried out, dry cleaning (step is repeated 13) during circulation, the deposit (deposit) being attached in the chamber 104 of plasma-etching apparatus 90 starts to be stripped.Cause This, after this circulation of stipulated number is repeated, open chamber 104, carries out chamber clean (step 14).Chamber clean is led to Cross with alcohol wipe deposit or with special decoction clean etc. mode carry out.
As described above, in the present embodiment, in the etching process of plasma-etching apparatus 90, processing substrate S's Processing gas is only with the SF as etching gas6Gas, and without using in the prior art with SF6The O being used together2Gas, The reaction product of generation enable by dry cleaning.Therefore, in plasma etch process, the deposition that is generated in chamber Thing (deposit) only has the MoFxx of high-vapor-pressure, the MoOx without generating low-steam pressure.Therefore, compared with prior art can The deposit (deposit) itself in chamber is reduced, and the deposit (deposit) in chamber can be removed by dry cleaning Go, can significantly increase cycle, the i.e. maintenance period for the chamber clean that open chamber is carried out.
In addition, when forming the Al of the adsorption electrode 246 of the electrostatic chuck 232 in plasma-etching apparatus 90 to dry cleaning The SF as fluoro-gas6Gas has patience, therefore, can also ensure that during dry cleaning the life-span of electrostatic chuck. Moreover, the dielectric layer 245 as classical sucker 232, uses mixing sputtered films of bismuth or Y2O3, it is possible to increase to as fluoro-gas SF6The patience of the plasma of gas.
<Other application>
In addition, the invention is not restricted to above-mentioned embodiment, various modifications can be carried out in the range of the thought of the present invention. For example, in the above-described embodiment, to for forming TFT source electrode and the etching of the metal film containing Al of drain electrode and use The example applied in the etching for forming the Mo class material membranes of photomask or gate electrode is illustrated, but not limited to this, only To use the reaction product that can be generated in the plasma etch process of plasma-etching apparatus can be by dry cleaning Processing gas.
In addition, in the above-described embodiment, show and use and etching gas identical during plasma etch process The example of clean gas, but clean gas can also use the gas different from etching gas.
Moreover, in the above-described embodiment, show by the use of inductively coupled plasma Etaching device and be used as plasma The example of Etaching device, but not limited to this, capacitance coupling plasma Etaching device or microwave plasma can also be used to lose Other plasma-etching apparatus such as engraving device.

Claims (24)

1. a kind of plasma-etching method, it is carried out using plasma-etching apparatus to the defined film being formed on substrate Plasma etching, the plasma-etching method be characterised by, including：
Selected processing gas is so as to obtain in the plasma etch process in the plasma-etching apparatus, the reaction of generation Product turns into the step of material that can do cleaning；
Plasma is carried out to the defined film using previously selected processing gas in the plasma-etching apparatus The step of etching process；With
After the step of having carried out the carry out plasma etch process of the stipulated number more than once or twice, using dry The plasma of clean gas is to carrying out dry cleaning in the chamber of plasma-etching apparatus the step of.
2. plasma-etching method as claimed in claim 1, it is characterised in that：
Dry clean gas during as the dry cleaning, used processing during using with the plasma etching Gas identical gas.
3. plasma-etching method as claimed in claim 1 or 2, it is characterised in that：
Film as defined in described is metal film containing Al, and the processing gas is chlorine-containing gas, and the reaction product is AlClx,
The plasma-etching method also includes：Plasma erosion in the plasma-etching apparatus has been carried out After quarter, the substrate after processing is transported to the after-treatment device being separately provided, utilizes O2Gas or O2Gas and fluoro-gas, enter Row is used for the post processing for suppressing corrosion,
Described the step of carrying out dry cleaning, is when having carried out the carry out plasma of the stipulated number more than once or twice Carve the step of handling and carried out after described the step of being post-processed.
4. plasma-etching method as claimed in claim 3, it is characterised in that：
The chlorine-containing gas as the processing gas is Cl2Gas.
5. the plasma-etching method as described in claim 3 or 4, it is characterised in that：
The metal film containing Al is the Ti/Al/Ti films of the source electrode and drain electrode for forming thin film transistor (TFT).
6. plasma-etching method as claimed in claim 1 or 2, it is characterised in that：
Film as defined in described is Mo class material membranes, and the processing gas is fluoro-gas, and the reaction product is MoFx.
7. plasma-etching method as claimed in claim 6, it is characterised in that：
The fluoro-gas as the processing gas is SF6Gas.
8. plasma-etching method as claimed in claims 6 or 7, it is characterised in that：
The Mo classes material membrane is for forming the grid of thin film transistor (TFT) or the Mo films of photomask or MoW films.
9. a kind of plasma-etching apparatus, it is used to implement at plasma etching the defined film being formed on substrate To manage, the plasma-etching apparatus is characterised by, including：
For storing the process container of substrate；
The substrate-placing platform of substrate is loaded in the process container；
To supplying etching gas and the gas supply mechanism of dry clean gas in the process container；
To the exhaust gear being exhausted in the process container；With
The plasma generation of the etching gas and the plasma of the dry clean gas is generated in the process container Mechanism,
The substrate-placing platform includes：Base material；And electrostatic chuck, it sets on the substrate, had by ceramic sputtered films of bismuth structure Into dielectric layer and be arranged on the dielectric layer inside adsorption electrode,
The dry clean gas is chlorine-containing gas,
The dielectric layer of the electrostatic chuck forms mixed for the mixture of spraying plating aluminum oxide, yittrium oxide and silicon compound Close sputtered films of bismuth.
10. plasma-etching apparatus as claimed in claim 9, it is characterised in that：
Form and use silica or silicon nitride to be closed as silication in the mixing sputtered films of bismuth of the dielectric layer of the electrostatic chuck Thing.
11. the plasma-etching apparatus as described in claim 9 or 10, it is characterised in that：
The adsorption electrode of the electrostatic chuck is made up of tungsten or molybdenum.
12. the plasma-etching apparatus as any one of claim 9~11, it is characterised in that：
The dry clean gas is Cl2Gas.
13. a kind of plasma-etching apparatus, it is used to implement at plasma etching the defined film being formed on substrate To manage, the plasma-etching apparatus is characterised by, including：
For storing the process container of substrate；
The substrate-placing platform of substrate is loaded in the process container；
To supplying etching gas and the gas supply mechanism of dry clean gas in the process container；
To the exhaust gear being exhausted in the process container；With
The plasma generation of the etching gas and the plasma of the dry clean gas is generated in the process container Mechanism,
The substrate-placing platform includes：Base material；And electrostatic chuck, it sets on the substrate, had by ceramic sputtered films of bismuth structure Into dielectric layer and be arranged on the dielectric layer inside adsorption electrode,
The dry clean gas is fluoro-gas,
The adsorption electrode is made up of aluminium.
14. plasma-etching apparatus as claimed in claim 13, it is characterised in that：
The dielectric layer of the electrostatic chuck is formed mixed by the mixture of spraying plating aluminum oxide, yittrium oxide and silicon compound Close sputtered films of bismuth or yittrium oxide is formed.
15. the plasma-etching apparatus as described in claim 13 or 14, it is characterised in that：
The dry clean gas is SF6Gas.
16. the plasma-etching apparatus as any one of claim 9~15, it is characterised in that：
As the etching gas, using with the dry clean gas identical gas.
17. a kind of substrate-placing platform, it is used to load substrate in process container in plasma-etching apparatus, the grade from Daughter Etaching device in the process container using etching gas the defined film being formed on the substrate is carried out etc. from Daughter etch and using dry clean gas plasma to carrying out doing cleaning in the process container, the substrate-placing platform It is characterised by, including：
Base material；With
Electrostatic chuck, it is set on the substrate, has the dielectric layer being made up of ceramic sputtered films of bismuth and is arranged on the electricity The adsorption electrode of the inside of dielectric layer,
The dry clean gas is chlorine-containing gas,
The dielectric layer of the electrostatic chuck forms mixed for the mixture of spraying plating aluminum oxide, yittrium oxide and silicon compound Close sputtered films of bismuth.
18. substrate-placing platform as claimed in claim 17, it is characterised in that：
The dielectric layer of the electrostatic chuck uses silica or silicon nitride as silicon compound.
19. the substrate-placing platform as described in claim 17 or 18, it is characterised in that：
The adsorption electrode of the electrostatic chuck is made up of tungsten or molybdenum.
20. the substrate-placing platform as any one of claim 17~19, it is characterised in that：
The dry clean gas is Cl2Gas.
21. a kind of substrate-placing platform, it is used to load substrate in plasma-etching apparatus in process container, the plasma Body Etaching device carries out plasma using etching gas in the process container to the defined film being formed on the substrate Body etch and using dry clean gas plasma to carrying out doing cleaning, the spy of the substrate-placing platform in the process container Sign is, including：
Base material；With
Electrostatic chuck, it is set on the substrate, has the dielectric layer being made up of ceramic sputtered films of bismuth and is arranged on the electricity The adsorption electrode of the inside of dielectric layer,
The dry clean gas is fluoro-gas,
The adsorption electrode is made up of aluminium.
22. substrate-placing platform as claimed in claim 21, it is characterised in that：
The dielectric layer of the electrostatic chuck is formed mixed by the mixture of spraying plating aluminum oxide, yittrium oxide and silicon compound Close sputtered films of bismuth or yittrium oxide is formed.
23. the substrate-placing platform as described in claim 21 or 22, it is characterised in that：
The dry clean gas is SF6Gas.
24. the substrate-placing platform as any one of claim 17~23, it is characterised in that：
As the etching gas, using with the dry clean gas identical gas.
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