TWI789450B - Plasma treatment device - Google Patents

Abstract

[Problem] Even in the case of dry cleaning, it is possible to improve the resistance to the plasma of the mounting table. [Solution] The plasma etching apparatus includes an insulating layer (145) of an electrostatic chuck (132) constituting a mounting surface of a substrate mounting table (130) on which a substrate to be subjected to plasma processing is mounted. The insulating layer (145) is formed of aluminum oxide, yttrium oxide and silicon compound. In addition, the plasma etching device (30) has an adsorption electrode (146) provided in the insulating layer (145) to adsorb the substrate by applying a predetermined voltage. The adsorption electrode (146) is formed of nickel-containing metal or chromium-containing metal.

Description

Plasma treatment device

Various aspects and embodiments of the present invention relate to plasma processing apparatus.

Plasma processing apparatuses for performing plasma processing such as etching and film formation are conventionally known. The plasma processing apparatus is provided with a mounting table on which an object to be processed such as a glass substrate is mounted. On the mounting table, an electrostatic chuck composed of an alumina spray film, electrode layer, sealant, etc. is installed on the surface of the object to be processed, and the object to be processed is adsorbed by the electrostatic chuck during plasma processing.

In addition, the plasma processing apparatus performs dry cleaning in which a gas for cleaning is supplied and cleaned in order to remove products adhering to the mounting table due to the plasma treatment. [Prior Art Literature] [Patent Document]

[Patent Document 1] JP-A-2008-066707

[Problem to be solved by the invention]

However, the plasma treatment device will consume the stage due to dry cleaning. For example, due to dry cleaning, the material that makes up the electrostatic chuck is consumed. [means to solve the problem]

In one embodiment, the disclosed plasma processing apparatus includes an insulating layer constituting a mounting surface of a mounting table on which an object to be processed to be subjected to plasma processing is mounted. The insulating layer is formed by aluminum oxide, yttrium oxide and silicon compound. In addition, the plasma processing apparatus includes an adsorption electrode provided in the insulating layer to adsorb the object to be processed by applying a predetermined voltage. The adsorption electrode is formed of nickel-containing metal or chromium-containing metal. [Effect of the invention]

According to one aspect of the disclosed plasma processing apparatus, even when dry cleaning is performed, the effect of improving the resistance to the plasma of the mounting table can be exhibited.

Hereinafter, embodiments of the plasma processing apparatus disclosed in the present application will be described in detail with reference to the drawings. In addition, the same code|symbol is attached|subjected to the same or equivalent part in each drawing. In addition, the invention disclosed in this embodiment is not limited. The respective embodiments can be combined as appropriate within a range that does not contradict processing contents.

<Structure of the substrate to which the plasma processing method according to the embodiment of the present invention is applied> FIG. 1 is a cross-sectional view showing the structure of an object to be treated to which a plasma treatment method according to an embodiment of the present invention is applied. In this embodiment, the case where the object to be processed is the substrate S will be described as an example.

This substrate S has a structure in which top-gate TFTs are formed on a glass substrate. Specifically, as shown in FIG. 1, a light-shielding layer 2 made of a Mo-based material (Mo, MoW) is formed on a glass substrate 1, and a polysilicon film made of polysilicon, which is a semiconductor layer, is formed thereon via an insulating film 3. (p—Si film) 4 , on which a gate electrode 6 made of a Mo-based material (Mo, MoW) is formed via a gate insulating film 5 , and an interlayer insulating film 7 is formed thereon. A contact hole is formed in the interlayer insulating film 7 , and a source electrode 8 a and a drain electrode 8 b connected to the p-Si film 4 through the contact hole are formed on the interlayer insulating film 7 . The source electrode 8 a and the drain electrode 8 b are composed of, for example, an Al-containing metal film having a Ti/Al/Ti structure in which a titanium film, an aluminum film, and a titanium film are laminated in this order. On the source electrode 8a and the drain electrode 8b, a protective film (not shown) made of, for example, a SiN film is formed, and a transparent electrode (not shown) connected to the source electrode 8a and the drain electrode 8b is formed on the protective film (FIG. not shown).

＜First Embodiment＞ First, the first embodiment will be described. In the first embodiment, the etching process of the Al-containing metal film when forming the source electrode 8 a and the drain electrode 8 b of the substrate S shown in FIG. 1 will be described as an example. In addition, when etching the Al-containing metal film used to form the source electrode 8a and the drain electrode 8b, a photoresist film (not shown) with a predetermined pattern is formed thereon, and it is used as a mask for plasma etching. .

[Apparatus Configuration Used in the Processing System and Plasma Etching Apparatus of the First Embodiment] First, the configuration of the processing system, the plasma etching device, and the like used in the first embodiment will be described.

Fig. 2 is a schematic plan view showing a processing system for implementing the processing method of the first embodiment. FIG. 3 is a cross-sectional view showing a plasma etching apparatus installed in the processing system of FIG. 2 . FIG. 6 is a schematic diagram showing a post-processing device mounted in the processing system of FIG. 2 .

As shown in FIG. 2 , the processing system 100 is a multi-chamber processing system including a vacuum transfer chamber 10 , a load lock chamber 20 , two plasma etching devices 30 , and a post-processing device 40 . The plasma etching device 30 and the post-processing device 40 perform processing under a predetermined reduced pressure atmosphere. The planar shape of the vacuum transfer chamber 10 is rectangular. The load lock chamber 20 , the two plasma etching apparatuses 30 , and the postprocessing apparatus 40 are connected through gate valves G on the walls of the vacuum transfer chamber 10 . Outside the load lock chamber 20, a carrier 50 for accommodating a rectangular substrate S is disposed.

Between the two carriers 50, a conveyance mechanism 60 is provided, and the conveyance mechanism 60 has: a jig 61 (only one shown in the figure) provided in two upper and lower stages, and a base capable of integrally moving in, out, retreating, and rotationally supported. 62.

The vacuum transfer chamber 10 can be maintained in a predetermined reduced pressure atmosphere, and a vacuum transfer mechanism 70 is provided as shown in FIG. 2 . Next, the substrate S is transferred between the load lock chamber 20 , the two plasma etching devices 30 , and the post-processing device 40 by the vacuum transfer mechanism 70 . The vacuum transfer mechanism 70 is provided with two substrate transfer arms 72 (only one is shown) so as to be movable back and forth on a rotatable and vertically movable base 71 .

Since the load lock chamber 20 is used for receiving and receiving the substrate S between the carrier 50 in the atmospheric atmosphere and the vacuum transfer chamber 10 in the depressurized atmosphere, the vacuum atmosphere and the atmospheric atmosphere can be switched in a short time. The load lock chamber 20 is provided with two upper and lower substrate storage sections (not shown), and the substrate S is aligned by a positioner (not shown) in each substrate storage section.

The plasma etching device 30 is used to etch the Al-containing metal film of the substrate S. As shown in FIG. . The body container 101 is grounded. The body container 101 is divided up and down by a dielectric wall 102, the upper side becomes the antenna container 103 defined as an antenna chamber, and the lower side becomes a chamber (processing container) 104 defined as a processing chamber. The dielectric wall 102 constitutes the ceiling wall of the chamber 104 and is made of ceramics such as Al ₂ O ₃ , quartz, or the like.

Between the side wall 103a of the antenna case 103 in the main body case 101 and the side wall 104a of the chamber 104, a support shelf 105 protruding inward is provided. The dielectric wall 102 is placed on the support frame 105 .

A shower frame 111 for supplying process gas is embedded in a lower portion of the dielectric wall 102 . The shower frame 111 has a cross shape and has a beam structure supporting the dielectric wall 102 from below. The shower frame 111 is suspended from the top of the main body container 101 by a plurality of suspension rods (not shown).

The shower frame 111 is made of conductive material, such as aluminum whose inner surface or outer surface is anodized. The shower frame 111 forms a gas flow path 112 extending horizontally, and a plurality of gas discharge holes 112a extending downward communicate with the gas flow path 112 .

On the other hand, a gas supply pipe 121 connected to the gas flow path 112 is provided at the center of the upper surface of the dielectric wall 102 . The gas supply pipe 121 penetrates from the top of the main body container 101 to the outside thereof, and branches into manifolds 121a and 121b. A chlorine-containing gas supply source 122 for supplying chlorine-containing gas, for example, Cl ₂ gas, is connected to the branch pipe 121a. Also, the branch pipe 121b is connected to an inert gas supply source 123 that supplies an inert gas such as Ar gas or N ₂ gas used as a purge gas and a diluent gas. Chlorine-containing gases are used as etching gases and dry cleaning gases. The branch pipes 121a and 121b are provided with flow controllers such as mass flow controllers and valve systems.

The gas supply pipe 121 , the branch pipes 121 a , 121 b , the chlorine-containing gas supply source 122 , the inert gas supply source 123 , and the flow controller and valve system constitute the processing gas supply mechanism 120 .

In the plasma etching apparatus 30, the chlorine-containing gas supplied from the processing gas supply mechanism 120 is supplied into the shower frame 111, and is discharged into the chamber 104 from the gas discharge hole 112a on the lower surface thereof, thereby performing the Al-containing gas of the substrate S. Etching of the metal film or dry cleaning of the chamber 104 . The dry cleaning is a process of removing reaction products attached to the chamber 104 without opening the chamber 104 by supplying a gas for cleaning. As the chlorine-containing gas, chlorine (Cl ₂ ) gas is preferable, but boron trichloride (BCl ₃ ) gas, carbon tetrachloride (CCl ₄ ) gas, etc. may also be used.

A radio frequency (RF) antenna 113 is arranged inside the antenna case 103 . The high-frequency antenna 113 is configured by arranging an antenna 113a made of a highly conductive metal such as copper or aluminum in a conventionally used arbitrary shape such as a loop or a spiral. The high-frequency antenna 113 may be a multiple antenna having a plurality of antenna parts. The high-frequency antenna 113 is separated from the dielectric wall 102 by a spacer 117 made of an insulating member.

A power feeding member 116 extending upward from the antenna case 103 is connected to the terminal 118 of the antenna 113 a. A power supply line 119 is connected to the upper end of the power supply member 116 , and the integrator 114 and the high-frequency power source 115 are connected to the power supply line 119 . Next, by supplying high-frequency power with a frequency of, for example, 13.56 MHz from the high-frequency power source 115 to the high-frequency antenna 113, an induced electric field is formed in the chamber 104 because the process gas supplied from the shower frame 111 is electrically charged to the high-frequency antenna 113 by the induction electric field. Plasma to generate inductively coupled plasma.

On the bottom wall of the chamber 104, a substrate mounting table 130 on which the substrate S is mounted is provided via a spacer 134 made of an insulator forming a frame shape. The substrate mounting table 130 has a substrate 131 disposed on the spacer 134 , an electrostatic chuck 132 disposed on the substrate 131 , and a side wall insulating member 133 covering the side walls of the substrate 131 and the electrostatic chuck 132 . The substrate 131 and the electrostatic chuck 132 are formed in a rectangular shape corresponding to the S-shape of the substrate, and the entire substrate mounting table 130 is formed in a square plate shape or a column shape. The spacers 134 and the side wall insulating members 133 are made of insulating ceramics such as alumina.

The electrostatic chuck 132 has an insulating layer 145 formed of a dielectric such as a ceramic spray film formed on the surface of the base material 131 , and an adsorption electrode 146 provided inside the insulating layer 145 .

Here, the configuration of the substrate 131 and the electrostatic chuck 132 will be described with reference to FIG. 4 . Fig. 4 is a cross-sectional view showing the structure of a base material and an electrostatic chuck according to the first embodiment.

The electrostatic chuck 132 is disposed on the substrate 131 . Base material 131 is formed of, for example, stainless steel. The base material 131 can also be used as a high-temperature electrode by using stainless steel, and can also be used in a plasma atmosphere of a chlorine-containing gas or a plasma atmosphere of a fluorine-containing gas described later.

The electrostatic chuck 132 has an insulating layer 145 and an adsorption electrode 146 disposed inside the insulating layer 145 . The insulating layer 145 has two layers of an upper insulating layer 145a and a lower insulating layer 145b overlapping in the vertical direction. In the present embodiment, the insulating layer 145 has an upper insulating layer 145 a on the side of the substrate S with respect to the adsorption electrode 146 , and a lower insulating layer 145 b on the opposite side of the substrate S with respect to the adsorption electrode 146 .

The upper insulating layer 145a and the lower insulating layer 145b are constituted by a mixed solvolytic film. The mixed spray film is formed by spraying a mixture of aluminum oxide (Al ₂ O ₃ ), yttrium oxide (Y ₂ O ₃ ), and a silicon compound. High plasma resistance on Y ₂ O ₃ material. Also, Al ₂ O ₃ has high chemical resistance to chlorine-containing gas. Furthermore, since the silicon compound becomes glassy and embeds in the grain boundaries of Y ₂ O ₃ and Al ₂ O ₃ to densify, the mixed spray film has high resistance to the plasma of chlorine-containing gas such as Cl ₂ gas. As the mixed injection film, an Al ₂ O ₃ ·Y ₂ O ₃ ·SiO ₂ film using silicon oxide (SiO ₂ ) as a silicon compound is preferable. Also, an Al ₂ O ₃ ·Y ₂ O ₃ ·SiO ₂ ·Si ₃ N ₄ film using silicon nitride (Si ₃ N ₄ ) as a silicon compound may be used.

Conventionally, in order to improve insulation in the insulating layer 145, a sealing process by a sealing member was performed. However, the sealing member may detach from the insulating layer 145 to cause particles during dry cleaning. However, in this embodiment, among the upper insulating layer 145a and the lower insulating layer 145b, only the lower insulating layer 145b is subjected to the sealing treatment by the sealing member. That is, the upper insulating layer 145a is not subjected to the sealing process. Thereby, the sealing process is not performed on the upper insulating layer 145a, and the generation of particles during dry cleaning can be suppressed.

Since the upper insulating layer 145a is not sealed, it is necessary to use a metal that is less corrosive to chlorine-based gases for the adsorption electrode 146 . In this case, the adsorption electrode 146 is made of nickel-containing metal. For example, the adsorption electrode 146 is formed of any one of Ni-5Al, SUS316L, and Hastelloy. These nickel-containing metals have high plasma resistance to chlorine-containing gases. In addition, pure nickel is not good as the adsorption electrode 146 because it is a strong magnetic substance. The adsorption electrode 146 is preferably made of nickel-containing metal with less magnetic properties.

FIG. 5 is a graph showing an example of resistance to chlorine-based gases of metals. In FIG. 5 , Cr, Ni-5Al, SUS316L, and Hastelloy, and tungsten (W) and molybdenum (Mo) conventionally used for the adsorption electrode 146 are shown as the removal amount of the chlorine-based gas relative to the Cl gas system. In addition, the cutting amount shown in FIG. 5 is a normalized value based on the cutting amount of Ni-5Al, and is rounded off below the decimal point. As shown in Fig. 5, Ni-5Al, SUS316L, and Hastelloy have less cutting amount and higher resistance to chlorine-based gases.

Also, since the upper insulating layer 145a is not subjected to a sealing process, it is preferable to spray it densely. In addition, if the upper insulating layer 145a has a heating function to the electrostatic chuck 132 or transfers heat from the base material 131, if there is a possibility of temperature rise, since the heat resistance will be lowered if it is too dense, some voids are required. Here, the upper insulating layer 145a is formed by quasi-dense mixing spraying. The porosity of the upper insulating layer 145a is preferably in the range of 1.5% to 4%. The porosity is more preferably in the range of 2.1% to 3.1%. Thereby, the upper insulating layer 145 a suppresses the entry of gas into the interior, and it is possible to suppress the gas from reaching the adsorption electrode 146 . The lower insulating layer 145b may also be formed by quasi-dense mixing spraying like the upper insulating layer 145a.

The adsorption electrode 146 can take various forms such as a plate shape, a film shape, a grid shape, and a mesh shape. As shown in FIG. 3 , the adsorption electrode 146 is connected to a DC power supply 148 through a power supply line 147 , and a DC voltage is applied to the adsorption electrode 146 . The power supply to the adsorption electrode 146 is turned on and off by a switch (not shown). By applying a DC voltage to the adsorption electrode 146, the substrate S is adsorbed by electrostatic adsorption force due to Coulomb force.

The base material 131 is connected to a high-frequency power source 153 for bias application through a power supply line 151 . Furthermore, an integrator 152 is provided between the base material 131 of the power supply line 151 and the high-frequency power source 153 . The high-frequency power supply 153 is for attracting ions on the substrate S on the base material 131, and uses a frequency in the range of 50 kHz to 10 MHz, for example, 3.2 MHz.

In addition, in the base material 131 of the substrate mounting table 130 , in order to control the temperature of the substrate S, a temperature adjustment mechanism such as a heater and a refrigerant channel, and a temperature sensor (both are not shown) are provided. In addition, in the state where the substrate S is placed on the substrate mounting table 130, there is provided a heat transfer gas supply mechanism (not shown) for supplying a heat transfer gas for heat transfer, for example, He gas, between the substrate S and the substrate mounting table 130. ). Furthermore, on the substrate mounting table 130, a plurality of lift pins (not shown) for receiving and receiving the substrate S are arranged in such a manner that the upper surface of the electrostatic chuck 132 can be recessed, and the receiving and receiving of the substrate S This is done with respect to the lift pins protruding upward from the upper surface of the electrostatic chuck 132 .

On the side wall 104 a of the chamber 104 , there is provided an inlet and outlet 155 for loading and unloading the substrate S into and out of the chamber 104 , and the inlet and outlet 155 can be opened and closed by a gate valve G. As shown in FIG. By opening the gate valve G, the substrate S can be carried in and out through the carry-in outlet 155 by the vacuum transfer mechanism 70 provided in the vacuum transfer chamber 10 .

A plurality of exhaust ports 159 (only two are shown) are formed at the edges or corners of the bottom wall of the chamber 104 . Each exhaust port 159 is provided with an exhaust unit 160 . The exhaust part 160 has: an exhaust pipe 161 connected to the exhaust port 159, an automatic pressure control valve (APC) 162 for controlling the pressure in the chamber 104 by adjusting the opening of the exhaust pipe 161, and is used to turn the chamber A vacuum pump 163 that exhausts the inside of 104 through an exhaust pipe 161. Next, the inside of the chamber 104 is exhausted by the vacuum pump 163. During the plasma etching process, by adjusting the opening of the automatic pressure control valve (APC) 162, the inside of the chamber 104 is set and maintained at a predetermined vacuum atmosphere.

The post-processing device 40 is a post-processing device for corrosion suppression after the Al-containing metal film of the substrate S is etched. The post-processing apparatus 40, as shown in FIG. 6 , has a processing gas supply mechanism 120' for supplying a gas different from that of the plasma etching apparatus 30 instead of the processing gas supply mechanism 120. Although other configurations are omitted in FIG. 6 , they have the same configuration as the plasma etching apparatus 30 . In addition, in the following description, about the same member as the said plasma etching apparatus 30, the same code|symbol is attached|subjected.

The processing gas supply mechanism 120' of the post-processing device 40 has: a gas supply pipe 121', branch pipes 121a', 121b', and 121c' branched from the gas supply pipe 121' on the upper outside of the main body container 101, and a gas supply pipe 121a connected to the branch pipe 121a. ', the _O2 gas supply source 124 that supplies _O2 gas is connected to the branch pipe 121b', the fluorine-containing gas supply source 125 that supplies the fluorine-containing gas is connected to the branch pipe 121c', and Ar gas is supplied as a purge gas and a dilution gas, An inert gas supply source 126 for inert gas such as N ₂ gas. The gas supply pipe 121' is connected to the gas flow path 112 of the shower frame 111 like the gas supply pipe 121 of the plasma etching apparatus 30 (see FIG. 3 ). The branch pipes 121a', 121b', 121c' are provided with flow controllers such as mass flow controllers and valve systems.

In the post-processing device 40, the O ₂ gas supplied from the processing gas supply mechanism 120 ′, or the O ₂ gas and the fluorine-containing gas are discharged into the chamber 104 through the shower frame 111 to perform etching of the substrate S containing fluorine. Corrosion inhibition treatment of Al metal film. The fluorine-containing gas is preferably carbon tetrafluoride (CF ₄ ), but sulfur hexafluoride (SF ₆ ) or the like may also be used.

Furthermore, in the post-processing device 40, since the insulating layer 145 in the electrostatic chuck 132 is not required to be resistant to plasma containing chlorine gas, the insulating layer 145 is made of Al ₂ O ₃ or Y ₂ O ₃ as before. Composed of spray film to form. In addition, since the post-processing device 40 only performs corrosion suppression processing, the electrostatic chuck 132 may not be provided.

The processing system 100 further has a control unit 80 . The control unit 80 is constituted by a computer equipped with a CPU and a memory unit, and each component of the processing system 100 (the vacuum transfer chamber 10, the load lock chamber 20, the plasma etching device 30, the post-processing device 40, the transfer mechanism 60, the vacuum transfer Each component part of the mechanism 70 is controlled so as to perform predetermined processing based on the processing recipe (program) stored in the storage part. The processing formula is stored in memory media such as hard disks, optical disks, and semiconductor memories.

[Plasma treatment method of the first embodiment] Next, the plasma processing method of the first embodiment performed by the processing system 100 described above will be described with reference to the flowchart of FIG. 7 . Fig. 7 is a flow chart showing the plasma treatment method according to the first embodiment.

Among them, the plasma etching process of the Ti/Al/Ti film which is the Al metal film for forming the source electrode 8 a and the drain electrode 8 b formed on the substrate S is performed by the processing system 100 .

First, in the plasma etching process of the plasma etching apparatus 30, a process gas is selected so that the generated reaction product can be dry-cleaned (step 1).

Specifically, in this embodiment, a chlorine-containing gas, for example, Cl ₂ gas, is selected as the processing gas. FIG. 8 is a schematic diagram showing reaction products generated in a chamber when an Al-containing metal film is etched using Cl ₂ gas as a process gas. When the Ti/Al/Ti film is plasma-etched using a chlorine-containing gas, as shown in FIG. 8 , AlClx is mainly produced as a reaction product, and a part of it adheres to the chamber wall as deposits (deposits). The AlClx can be removed by high vapor pressure dry cleaning.

9 is a schematic view showing reaction products generated in the chamber when an Al-containing metal film is etched using Cl ₂ gas as a processing gas and then post-processed with O ₂ gas, or O ₂ gas and CF ₄ gas. On the other hand, when the Ti/Al/Ti film is etched with Cl ₂ gas as before, after the post-treatment for corrosion suppression is performed in the same chamber, as shown in Fig. 9, O ₂ gas is supplied as the post-treatment gas. After plasma treatment, the attached AlClx reacts with _O2 gas to generate AlOx with low vapor pressure in the chamber. Furthermore, in order to further increase the corrosion inhibitory effect, a fluorine-containing gas other than O ₂ gas, for example, CF ₄ gas is supplied to generate AlFx with a low vapor pressure in addition to AlOx in the chamber. These AlOx and AlFx do not volatilize due to the vapor pressure, and tend to adhere to the chamber wall to form deposits (accumulation). Then, after peeling off, it becomes a cause of particles and has a bad influence on the product. Also, since these are highly stable, it is difficult to remove them in dry cleaning.

Here, in this embodiment, in order to generate AlClx capable of dry cleaning as a reaction product in the chamber, and not generate AlOx and AlFx that are difficult to remove in dry cleaning as the cause of particles, the plasma etching device 30 is The processing gas for the substrate S was set to be a chlorine-containing gas (Cl ₂ gas) only as an etching gas.

After selecting the processing gas during the plasma etching, the Al-containing metal film formed on the substrate S, that is, the Ti/Al/Ti film, is used by the plasma etching device 30, using the pre-selected processing gas, that is, a chlorine-containing gas, such as , Cl ₂ gas is given plasma etching treatment (step 2).

Hereinafter, the plasma etching treatment of Step 2 will be specifically described.

The substrate S is taken out from the carrier 50 by the transfer mechanism 60 and transferred to the load lock chamber 20 . The vacuum transfer mechanism 70 in the vacuum transfer chamber 10 receives the substrate S from the load lock chamber 20 and transfers it to the plasma etching device 30 .

In the plasma etching apparatus 30, first, the chamber 104 is adjusted to a pressure suitable for the vacuum transfer chamber 10 by the vacuum pump 163, and the gate valve G is opened to carry the substrate S into the chamber 104 through the vacuum transfer mechanism 70 through the import outlet 155. Inside, the substrate S is placed on the substrate mounting table 130 . After the vacuum transfer mechanism 70 is withdrawn from the chamber 104, the gate valve G is closed.

In this state, the pressure in the chamber 104 is adjusted to a predetermined vacuum degree by the automatic pressure control valve (APC) 162, and at the same time, the etching gas is supplied as a processing gas from the processing gas supply mechanism 120 through the shower frame 111. Chlorine-containing gas, eg, Cl ₂ gas, is introduced into the chamber 104 . In addition to chlorine-containing gas, an inert gas such as Ar gas may be supplied as a diluent gas.

At this time, the substrate S is adsorbed by the electrostatic chuck 132 and its temperature is adjusted by a temperature adjustment mechanism (not shown).

Next, a high frequency of, for example, 13.56 MHz is applied from the high frequency power source 115 to the high frequency antenna 113 , whereby a uniform induced electric field is formed in the chamber 104 through the dielectric wall 102 . By the induced electric field thus formed, a plasma containing chlorine gas is generated. The Ti/Al/Ti film, which is the Al-containing metal film of the substrate S, is etched by the high-density inductively coupled plasma thus generated.

At this time, in the plasma etching apparatus 30 , AlClx is generated as a reaction product as described above, and a part of it adheres to the wall portion and the like in the chamber 104 . On the other hand, almost no AlOx and AlFx are produced.

Next, the Al-containing metal film of the substrate S after plasma etching, that is, the Ti/Al/Ti film, is treated with O ₂ gas, or O ₂ gas and a fluorine-containing gas, for example, CF ₄ gas, by the post-processing device 40. Post-treatment for corrosion inhibition (step 3).

Hereinafter, the post-processing of step 3 will be specifically described.

The etched substrate S is taken out from the plasma etching device 30 by the vacuum transfer mechanism 70 and transferred to the post-processing device 40 .

In the post-processing apparatus 40, like the plasma etching apparatus 30, the substrate S is carried into the chamber 104, placed on the substrate mounting table 130, the pressure in the chamber 104 is adjusted to a predetermined vacuum degree, and simultaneously The gas supply mechanism 120 ′ supplies O ₂ gas, or O ₂ gas and fluorine-containing gas, such as CF ₄ gas, into the chamber 104 through the shower frame 111 as a post-processing gas. Furthermore, an inert gas such as Ar may be supplied as a diluent gas.

Next, similar to the plasma etching device 30, the post-processing gas O ₂ gas, or the plasma of O ₂ gas and fluorine-containing gas is generated by the induced electric field, and etched is performed by the inductively coupled plasma thus generated. Corrosion inhibition treatment of Al-containing metal film, namely Ti/Al/Ti film.

At this time, in the post-processing device 40, since the etching process is not performed, the generation amount of the reaction product is small.

The substrate S after the post-processing in the post-processing device 40 is taken out from the chamber 104 of the post-processing device 40 by the vacuum transfer mechanism 70 , transferred to the load lock chamber 20 , and returned to the carrier 50 by the transfer mechanism 60 .

After performing the above plasma etching treatment (step 2) and post-processing (step 3) for a predetermined number of times or more, perform dry cleaning treatment in the chamber 104 of the plasma etching device 30 (step 4) .

In the dry cleaning, in the state where the substrate S is not placed on the substrate mounting table 130, a gas containing chlorine, for example, Cl ₂ gas is supplied as a dry cleaning gas in the chamber 104, which is the same as the etching gas in the plasma etching, by The same inductively coupled plasma is used for plasma etching.

By this dry cleaning, AlClx adhering to the chamber 104 of the plasma etching apparatus 30 can be removed. That is, in the plasma etching apparatus 30, since the conventional O ₂ gas, or O ₂ gas and a fluorine-containing gas are not subjected to corrosion inhibition treatment, there is no generation of reaction products that are difficult to remove by dry cleaning. AlOx and AlFx, capable of dry cleaning.

In addition, during dry cleaning, since the substrate S is not placed on the substrate stage 130 , there is no substrate S on the electrostatic chuck 132 , and the dry cleaning gas, that is, the chlorine-containing gas plasma will directly act on the electrostatic chuck 132 .

In the past, because the plasma etching device did not perform dry cleaning, and the plasma treatment was not performed without the substrate S on the electrostatic chuck, the insulating layer of the electrostatic chuck was made of Y ₂ O ₃ and Al ₂ O ₃ eluting films. That's enough. However, if the plasma containing chlorine gas is directly applied during dry cleaning, it is found that the solution film of Y ₂ O ₃ and Al ₂ O ₃ as the insulating layer will be destroyed, and the service life may be shortened. In order to solve this problem, it is considered that during dry cleaning, dry cleaning is carried out in a state where the test substrate, that is, plain glass is placed on the substrate mounting table 130, but at this time, the plain glass is carried in/out The productivity of the project will decrease.

Here, in this embodiment, as the insulating layer 145 of the electrostatic chuck 132, a mixed spray film formed by spraying a mixture of Al ₂ O ₃ , Y ₂ O ₃ , and a silicon compound is used. Y ₂ O ₃ has high plasma resistance in terms of material, and Al ₂ O ₃ has high chemical resistance to chlorine-containing gas, and silicon compound has a glassy quality and is embedded in the grain boundaries of Y ₂ O ₃ and Al ₂ O ₃ to densify Due to the effect of this, the plasma resistance of the hybrid spray film to chlorine-containing gases such as Cl ₂ gas becomes high, and the expected life can be maintained without placing plain glass during dry cleaning. In addition, the insulating layer 145 has an upper insulating layer 145 a on the side of the substrate S with respect to the adsorption electrode 146 , and a lower insulating layer 145 b on the opposite side of the substrate S with respect to the adsorption electrode 146 . A sealing process by a sealing member is performed on the lower insulating layer 145b. The sealing process is not performed on the upper insulating layer 145a. Thereby, since the sealing process is not performed on the upper insulating layer 145a, the generation of particles from the sealing member during dry cleaning can be suppressed.

As mentioned above, as the mixed spray film, a mixed spray film of Al ₂ O ₃ , Y ₂ O ₃ , and SiO ₂ is preferable. In addition, a mixed spray film of Al ₂ O ₃ ·Y ₂ O ₃ ·SiO ₂ ·Si ₃ N ₄ can also be applied. In addition, the adsorption electrode 146 of the electrostatic chuck 132 exhibits high resistance to plasma containing chlorine gas by using Ni-5Al, SUS316L, and Hastelloy.

In this way, after the plasma etching treatment (step 2) and the post-processing (step 3) are performed a predetermined number of times, after the cycle of dry cleaning treatment (step 4) is repeated, the deposits attached to the chamber 104 of the plasma etching device 30 Deposits (deposits) begin to peel off. Thus, after repeating this cycle a predetermined number of times, the chamber 104 is opened for chamber wet cleaning (step 5). The wet cleaning of the chamber is carried out by wiping the deposits with alcohol or cleaning them with a special chemical solution.

As above, the plasma etching apparatus 30 has the insulating layer 145 constituting the electrostatic chuck 132 constituting the mounting surface of the substrate mounting table 130 on which the substrate S to be plasma processed is mounted. The insulating layer 145 is formed of aluminum oxide, yttrium oxide and silicon compound. Moreover, the plasma etching apparatus 30 has the adsorption electrode 146 provided in the insulating layer 145, and adsorb|sucks the board|substrate S by applying a predetermined voltage. The adsorption electrode 146 is formed of nickel-containing metal. Thereby, even when the plasma etching apparatus 30 performs dry cleaning, it is possible to exhibit the effect of improving the resistance to the plasma of the substrate mounting table 130 . As a result, in the plasma etching apparatus 30, deposits (accumulations) in the chamber can be removed by dry cleaning, and the cycle of chamber cleaning (that is, the maintenance cycle) by opening the chamber can be significantly extended.

In addition, the plasma etching apparatus 30 performs plasma etching treatment by plasma of chlorine-containing gas. The adsorption electrode 146 is formed of nickel-containing metal. For example, the adsorption electrode 146 is formed of any one of Ni-5Al, SUS316L, and Hastelloy. In this way, since the adsorption electrode 146 is resistant to the chlorine-containing gas plasma during dry cleaning, the life of the electrostatic chuck can be maintained even if dry cleaning is performed.

In addition, in the plasma etching apparatus 30 , the insulating layer 145 is formed of an upper insulating layer 145 a on the substrate S side with respect to the adsorption electrode 146 , and a lower insulating layer 145 b on the opposite side of the substrate S with respect to the adsorption electrode 146 . Next, the plasma etching apparatus 30 performs a sealing process by a sealing member only on the lower insulating layer 145b. Accordingly, the plasma etching apparatus 30 can suppress the generation of particles from the plugging member during dry cleaning.

In addition, in the processing system 100, in the etching process of the plasma etching apparatus 30, the processing gas for processing the substrate S is only a chlorine-containing gas such as Cl ₂ gas. Next, the processing system 100 performs plasma processing of O ₂ gas or O ₂ gas and fluorine-containing gas for corrosion suppression in the same chamber after etching in the post-processing device 40 provided separately. Therefore, in the plasma etching apparatus 30, AlOx and AlFx with low vapor pressure are not generated during the plasma etching process, and deposits (deposits) generated in the chamber are only AlClx with high vapor pressure. Therefore, in the plasma etching apparatus 30, the deposits (deposits) in the chamber itself are reduced more than before, and at the same time, the deposits (deposits) in the chamber can be removed by dry cleaning. As a result, the processing system 100 can remarkably prolong the chamber cleaning cycle (that is, the maintenance cycle) by opening the chamber of the plasma etching apparatus 30 .

＜Second Embodiment＞ Next, the second embodiment will be described. In this embodiment, the etching process of the Mo-based material film when forming the gate electrode 6 or the light-shielding layer 2 of the substrate S shown in FIG. 1 will be described as an example. In addition, when etching the Mo-based material film for forming the gate electrode 6 or the light-shielding layer 2 , a photoresist film (not shown) having a predetermined pattern is formed thereon and used as a mask for plasma etching.

[Apparatus Configuration of Processing System and Plasma Etching Apparatus Used in Second Embodiment] First, the configuration of the processing system, the plasma etching device, and the like used in the second embodiment will be described. Fig. 10 is a schematic plan view showing a processing system for implementing the processing method of this embodiment. FIG. 11 is a cross-sectional view showing a plasma etching apparatus mounted in the processing system of FIG. 10 .

As shown in FIG. 10 , the processing system 200 is basically configured as a multi-chamber processing system similar to the processing system 100 of FIG. 2 . The processing system 200 of this embodiment has the same configuration as the processing system 100 of FIG. 2 except that three plasma etching devices 90 are provided instead of the two plasma etching devices 30 and the post-processing device 40 . Since the other configurations are the same as in FIG. 2 , descriptions thereof are omitted by attaching the same symbols.

The plasma etching apparatus 90 is used to etch the Mo-based material film of the substrate S. As shown in FIG. Except for 232, it has the same configuration as that of the plasma etching apparatus 30 in FIG. 3 . Next, the same symbols as those in FIG. 3 are assigned the same symbols, and description thereof will be omitted.

The processing gas supply mechanism 220 has: a gas supply pipe 221, branch pipes 221a, 221b branched from the gas supply pipe 221 on the upper outside of the main body container 101, connected to the branch pipe 221a, and supplies fluorine-containing gas, that is, SF ₆ gas of SF ₆ gas. The supply source 222 is connected to the branch pipe 221b, and an inert gas supply source 223 that supplies inert gases such as Ar gas and N ₂ gas as purge gas and diluent gas. The gas supply pipe 221 is connected to the gas flow path 112 of the shower frame 111 like the gas supply pipe 121 of the plasma etching apparatus 30 of FIG. 3 . Fluorine-containing gases are used as etching gases and dry cleaning gases. In addition, as the fluorine-containing gas, CF ₄ or NF ₃ may be used in addition to SF ₆ gas.

The electrostatic chuck 232 has an insulating layer 245 formed of a dielectric such as a ceramic spray film formed on the surface of the base material 131 , and an adsorption electrode 246 provided inside the insulating layer 245 .

Here, the configuration of the substrate 131 and the electrostatic chuck 232 will be described with reference to FIG. 12 . Fig. 12 is a cross-sectional view showing the structure of a substrate and an electrostatic chuck according to a second embodiment.

The electrostatic chuck 232 is disposed on the substrate 131 . Base material 131 is formed of, for example, stainless steel. The base material 131 can also be used as a high-temperature electrode by using stainless steel, and can also be used in a plasma atmosphere of a chlorine-containing gas or a plasma atmosphere of a fluorine-containing gas.

The electrostatic chuck 232 has an insulating layer 245 and an adsorption electrode 246 disposed inside the insulating layer 245 . The insulating layer 245 has two layers of an upper insulating layer 245 a and a lower insulating layer 245 b overlapping in the vertical direction. In the present embodiment, the insulating layer 245 has an upper insulating layer 245 a on the side of the substrate S with respect to the adsorption electrode 246 , and a lower insulating layer 245 b on the opposite side of the substrate S with respect to the adsorption electrode 246 .

The upper insulating layer 245a and the lower insulating layer 245b are constituted by a hybrid solution film. The mixed spray film is formed by spraying a mixture of aluminum oxide (Al ₂ O ₃ ), yttrium oxide (Y ₂ O ₃ ), and a silicon compound. High plasma resistance on Y ₂ O ₃ material. Furthermore, since the silicon compound becomes glassy and embeds in the grain boundaries of Y ₂ O ₃ and Al ₂ O ₃ for densification, the mixed spray film has high resistance to the plasma of fluorine-containing gas such as SF ₆ gas. As the mixed injection film, an Al ₂ O ₃ ·Y ₂ O ₃ ·SiO ₂ film using silicon oxide (SiO ₂ ) as a silicon compound is preferable. Also, an Al ₂ O ₃ ·Y ₂ O ₃ ·SiO ₂ ·Si ₃ N ₄ film using silicon nitride (Si ₃ N ₄ ) as a silicon compound may be used.

However, in this embodiment, among the upper insulating layer 245a and the lower insulating layer 245b, only the lower insulating layer 245b is subjected to the sealing treatment by the sealing member. That is, the upper insulating layer 245a is not subjected to the sealing process. Thereby, the sealing process is not performed on the upper insulating layer 245a, and the generation of particles during dry cleaning can be suppressed.

Since the upper insulating layer 245a is not sealed, it is necessary to use a metal that is less corrosive to chlorine-based gases for the adsorption electrode 246 . In this case, the adsorption electrode 246 is formed from a chromium-containing metal. For example, the adsorption electrode 246 is formed of chromium (Cr). These chromium (Cr) have lower vapor pressures than tungsten (W) and molybdenum (Mo), chlorides, and fluorides which have been used in conventional adsorption electrodes.

Fig. 13 is a cross-sectional view showing an example of vapor pressure. FIG. 13 shows the vapor pressure at each temperature of chloride and fluoride of chromium (Cr), tungsten (W), and molybdenum (Mo). Such chromium (Cr) has a lower vapor pressure than tungsten (W) and molybdenum (Mo), chlorides, and fluorides. Therefore, chromium (Cr) has higher resistance to fluorine-containing gas than tungsten (W) and molybdenum (Mo).

Also, chromium (Cr) has a linear expansion coefficient closer to that of alumina (Al ₂ O ₃ ) and yttrium oxide (Y ₂ O ₃ ) than tungsten (W) and molybdenum (Mo).

Fig. 14 is a cross-sectional view showing an example of a coefficient of linear expansion. Fig. 14 shows the linear expansion coefficients (a) of chromium (Cr), tungsten (W), molybdenum (Mo), aluminum oxide (Al ₂ O ₃ ), and yttrium oxide (Y ₂ O ₃ ). In addition, chromium (Cr), tungsten (W), and molybdenum (Mo) represent differences (Δa) in linear expansion coefficients from alumina (Al ₂ O ₃ ) and yttrium oxide (Y ₂ O ₃ ). As shown in FIG. 14 , chromium (Cr) has a linear expansion coefficient close to that of alumina (Al ₂ O ₃ ) and yttrium oxide (Y ₂ O ₃ ) compared to tungsten (W) and molybdenum (Mo). Thereby, since the electrostatic chuck 232 forms the adsorption electrode 246 with chromium (Cr), even when the temperature becomes high, it is difficult to cause the spray fracture of the insulating layer 245 .

Since the upper insulating layer 245a is not subjected to a sealing process, it is preferable to be densely sprayed by quasi-dense mixed spraying similarly to the upper insulating layer 145a of the first embodiment.

The adsorption electrode 246 can take various forms such as a plate shape, a film shape, a grid shape, and a mesh shape. The adsorption electrode 246 is connected to the DC power supply 148 through the power supply line 147 , and a DC voltage is applied to the adsorption electrode 246 . The power supply to the adsorption electrode 246 is turned on and off by a switch (not shown). By applying a DC voltage to the adsorption electrode 246, the substrate S is adsorbed by electrostatic adsorption force due to Coulomb force.

The insulating layer 245 of the electrostatic chuck 232 is composed of a mixed spray film formed by spraying a mixture of aluminum oxide (Al ₂ O ₃ ), yttrium oxide (Y ₂ O ₃ ), and a silicon compound, or Y ₂ O ₃ . Also, the adsorption electrode 246 of the electrostatic chuck 232 is made of chromium (Cr). Aluminum oxide (Al ₂ O ₃ ), yttrium oxide (Y ₂ O ₃ ), a mixture with a silicon compound, and Y ₂ O ₃ , which constitute the insulating layer 245, and Al, which constitutes the adsorption electrode 246, are resistant to the fluorine-based gas SF ₆ The plasma has high resistance.

[Plasma treatment method of the second embodiment] Next, the plasma processing method of the second embodiment performed by the above processing system 200 will be described with reference to the flowchart of FIG. 15 . Fig. 15 is a flow chart showing the plasma treatment method according to the second embodiment.

Wherein, the plasma etching process for forming a Mo-based material film, such as a Mo film or a MoW film, on the substrate S is performed by the processing system 200 .

First, in the plasma etching process of the plasma etching apparatus 90, a process gas is selected so that the generated reaction product can be dry-cleaned (step 11).

Specifically, in this embodiment, SF ₆ gas, which is a fluorine-containing gas, is selected as the processing gas. 16 is a schematic diagram showing reaction products generated in the chamber when a Mo-based material film is etched using SF ₆ gas as a processing gas. When a Mo-based material film such as a Mo film and a MoW film is plasma-etched using _SF6 gas, as shown in FIG. deposits), but the high vapor pressure of MoFx can be removed by dry cleaning.

17 is a schematic view showing reaction products generated in the chamber when a Mo-based material film is etched using SF ₆ gas and O ₂ gas as processing gases. On the other hand, when the Mo-based material film is etched with SF ₆ gas and O ₂ gas as before, as shown in FIG. 17 , MoFxOy and MoOx are produced as reaction products in addition to MoFx. Among them, MoOx does not volatilize because of its low vapor pressure, and easily adheres to the chamber wall to form deposits (accumulation). Next, the MoOx, which is the deposit, peels off and becomes a cause of particles, which adversely affects the product. Also, because MoOx is highly stable, it is difficult to remove it in dry cleaning.

Here, in this embodiment, in order to generate MoFx capable of dry cleaning as a reaction product in the chamber without generating MoOx, which is difficult to remove in dry cleaning as a cause of particles, the substrate S in the plasma etching apparatus 90 is The processing gas is set to only fluorine-containing gas, that is, SF ₆ gas.

After selecting the processing gas during the plasma etching, the Mo material film formed on the substrate S is subjected to plasma etching using the pre-selected processing gas, that is, _SF6 gas, by the plasma etching device 90 (step 12) .

Hereinafter, the plasma etching process related to step 12 will be specifically described. The substrate S is taken out from the carrier 50 by the transfer mechanism 60 and transferred to the load lock chamber 20 . The vacuum transfer mechanism 70 in the vacuum transfer chamber 10 receives the substrate S from the load lock chamber 20 and transfers it to the plasma etching device 90 .

In the plasma etching apparatus 90, first, the chamber 104 is adjusted to a pressure suitable for the vacuum transfer chamber 10, the gate valve G is opened, and the substrate S is carried into the chamber 104 through the vacuum transfer mechanism 70 through the import outlet 155, and the The substrate S is placed on the mounting table 130 . After the vacuum transfer mechanism 70 is withdrawn from the chamber 104, the gate valve G is closed.

In this state, the pressure in the chamber 104 is adjusted to a predetermined vacuum degree by the automatic pressure control valve (APC) 162, and at the same time, a fluorine-containing gas is supplied as a processing gas from the processing gas supply mechanism 220 through the shower frame 111. That is, SF ₆ gas enters the chamber 104 . In addition to SF ₆ gas, an inert gas such as Ar gas may be supplied as a diluent gas.

At this time, the substrate S is adsorbed by the electrostatic chuck 232 and its temperature is adjusted by a temperature adjustment mechanism (not shown).

Next, a high frequency of, for example, 13.56 MHz is applied from the high frequency power source 115 to the high frequency antenna 113 , whereby a uniform induced electric field is formed in the chamber 104 through the dielectric wall 102 . A plasma of SF ₆ gas, which is a fluorine-containing gas, is generated by the induced electric field thus formed. The Mo-based material film of the substrate S is etched by the high-density inductively coupled plasma thus generated.

At this time, in the plasma etching apparatus 90 , MoFx is generated as a reaction product as described above, and adheres to the wall portion and the like in the chamber 104 . On the other hand, MoOx is hardly generated.

After the plasma etching process in step 12 is performed in the plasma etching device 90 , the substrate S is taken out by the vacuum transport mechanism 70 , transported to the load lock chamber 20 , and returned to the carrier 50 by the transport mechanism 60 .

After performing the plasma etching treatment in Step 12 as above for a predetermined number of times, one or more times, dry cleaning treatment in the chamber 104 of the plasma etching apparatus 90 is performed (Step 13 ).

In the dry cleaning, in the state where the substrate S is not placed on the substrate mounting table 130, a fluorine-containing gas, that is, SF ₆ gas is supplied as a dry cleaning gas in the chamber 104, which is the same as the etching gas during plasma etching. The same inductively coupled plasma is used for plasma etching.

MoFx adhering to the chamber 104 of the plasma etching apparatus 90 can be removed by this dry cleaning. That is, in the plasma etching apparatus 90, since the conventionally used O ₂ gas is not contained as the etching gas, MoOx, which is difficult to remove by dry cleaning, is not generated as a reaction product, and dry cleaning can be performed.

Also, during dry cleaning, since the substrate S is not placed on the substrate mounting table 130, there is no substrate S on the electrostatic chuck 232, and the dry cleaning gas, that is, the plasma of SF ₆ gas will directly act on the electrostatic chuck 232.

In the past, because the plasma etching device did not perform dry cleaning, and the plasma treatment was not performed in the state where the electrostatic chuck did not place the substrate S, the electrostatic chuck was used as an insulating layer and the spraying of Y ₂ O ₃ and Al ₂ O ₃ film, it is sufficient to use W and Mo as adsorption electrodes. However, even if the fluorine-containing gas, that is, SF ₆ gas plasma, directly acts on the electrostatic chuck during dry cleaning, the insulating layer, that is, the Y ₂ O ₃ and Al ₂ O ₃ dissolution film is resistant, but the sealing material of the dissolution film is damaged by the electrostatic chuck. After the plasma is removed and the plasma and fluorine-containing gas reach the adsorption surface, the W and Mo of the adsorption electrode are destroyed, and it is found that the life of the electrostatic chuck may be shortened. In order to solve this problem, it is considered that dry cleaning is carried out in a state where the test substrate, namely plain glass, is placed on the substrate mounting table 130 during dry cleaning. The productivity of the project will decrease.

Here, in this embodiment, a chromium-containing metal is used as the adsorption electrode 246 of the electrostatic chuck 232 . For example, in this embodiment, chromium (Cr) is used as the adsorption electrode 246 . Since Cr is more resistant to plasma of SF ₆ gas, which is a fluorine-containing gas, than W and Mo, it is possible to maintain a desired life without placing plain glass during dry cleaning.

In addition, the mixed spray film formed by spraying alumina (Al ₂ O ₃ ), yttrium oxide (Y ₂ O ₃ ), and a mixture of silicon compounds, and Y ₂ O ₃ , because the plasma of fluorine-containing gas, that is, SF ₆ gas The resistance is high. In addition to using Cr as the adsorption electrode 246, by using a mixed spray film or Y ₂ O ₃ as the insulating layer 245, the resistance to the plasma of SF ₆ gas can be further improved.

In this way, after the plasma etching treatment (step 12) is performed a predetermined number of times, after the cycle of dry cleaning (step 13) is repeated, the deposits (deposits) attached to the chamber 104 of the plasma etching device 90 start to peel off. . Thus, after repeating this cycle a predetermined number of times, the chamber 104 is opened for chamber wet cleaning (step 14). The wet cleaning of the chamber is carried out by wiping the deposits with alcohol or cleaning them with a special chemical solution.

As mentioned above, the plasma etching apparatus 30 performs the plasma etching process by the plasma of fluorine-containing gas. The adsorption electrode 246 is formed of a chromium-containing metal. For example, the adsorption electrode 246 is formed of chromium (Cr). Therefore, since the adsorption electrode 246 is resistant to the fluorine-containing gas plasma during dry cleaning, the life of the electrostatic chuck 132 can be maintained even if it is dry cleaned. Also, since the hybrid spray film is used as the insulating layer 245 of the electrostatic chuck 232, the resistance to plasma of SF ₆ gas, which is a fluorine-containing gas, can be further improved.

In addition, in the processing system 100, in the etching process of the plasma etching apparatus 90, the gas used for etching the substrate S is only SF gas, which is a fluorine _- containing gas, so that the generated reaction product can be dry-cleaned. O ₂ gas was used which was previously used with SF ₆ gas. Therefore, in the plasma etching apparatus 90, MoOx with a low vapor pressure is not generated during the plasma etching process, and deposits (deposits) generated in the chamber are only MoFx with a high vapor pressure. Therefore, in the plasma etching apparatus 90, deposits (deposits) in the chamber itself are reduced compared to before, and deposits (deposits) in the chamber can be removed by dry cleaning. As a result, the processing system 100 can remarkably extend the cycle of chamber cleaning by opening the chamber of the plasma etching apparatus 90 , that is, the maintenance cycle.

＜Other applicable＞ In addition, this invention is not limited to the said embodiment, Various deformation|transformation is possible within the scope of the idea of this invention. For example, in the above-mentioned embodiment, although the etching of the suitable Al-containing metal film for forming the source electrode and the drain electrode of the TFT and the etching of the suitable Mo-based material film for forming the light shielding film or the gate electrode have been described. As an example, but not limited thereto, in the plasma etching process of the plasma etching device, the reaction product generated can use a process gas that can be dry-cleaned.

In addition, in the above-mentioned embodiment, although the example of using the same etching gas as the etching gas during plasma etching was shown as the cleaning gas, the cleaning gas may be different from the etching gas.

Furthermore, in the above-mentioned embodiment, although an example of using an inductively coupled plasma etching device was shown as the plasma etching device, it is not limited to this, and other plasma etching devices such as a capacitively coupled plasma etching device and a microwave plasma etching device, etc. also can.

1‧‧‧Glass substrate 2‧‧‧shading layer 4‧‧‧polysilicon film 5‧‧‧gate insulation film 6‧‧‧gate electrode 7‧‧‧Interlayer insulating film 8a‧‧‧Source electrode 8b‧‧‧Drain electrode 10‧‧‧vacuum transfer chamber 20‧‧‧Load lock chamber 30.90‧‧‧Plasma etching device 40‧‧‧post-processing device 50‧‧‧carrier 60‧‧‧Conveyor 70‧‧‧Vacuum transfer mechanism 80‧‧‧Control Department 100, 200‧‧‧processing system 101‧‧‧Body container 102‧‧‧dielectric wall 104‧‧‧chamber 111‧‧‧Spray frame 113‧‧‧High frequency antenna 115, 153‧‧‧High frequency power supply 120, 120’, 220‧‧‧Processing gas supply mechanism 130‧‧‧substrate mounting table 130‧‧‧‧‧‧substrate 132, 232‧‧‧Electrostatic Chuck 145, 245‧‧‧Insulation layer 145a, 245a‧‧‧upper insulating layer 145b, 245b‧‧‧lower insulating layer 146, 246‧‧‧adsorption electrode 160‧‧‧Exhaust S‧‧‧substrate

[ Fig. 1 ] Fig. 1 is a cross-sectional view showing the structure of an object to be treated to which the plasma treatment method according to the embodiment of the present invention is applied. [ Fig. 2 ] Fig. 2 is a schematic plan view showing a processing system for implementing the processing method of the first embodiment. [ FIG. 3 ] FIG. 3 is a cross-sectional view showing a plasma etching apparatus mounted in the processing system of FIG. 2 . [ Fig. 4 ] Fig. 4 is a cross-sectional view showing the configuration of the base material and the electrostatic chuck according to the first embodiment. [ Fig. 5 ] Fig. 5 is a graph showing an example of resistance to a metal chlorine-based gas. [ Fig. 6 ] Fig. 6 is a schematic diagram showing a post-processing device mounted in the processing system of Fig. 2 . [Fig. 7] Fig. 7 is a flow chart showing the plasma treatment method according to the first embodiment. [FIG. 8] FIG. 8 is a schematic diagram showing reaction products generated in a chamber when an Al-containing metal film is etched using Cl ₂ gas as a processing gas. [FIG. 9] FIG. 9 is a graph showing the reaction products generated in the chamber when the Al-containing metal film is etched using _Cl2 gas as the processing gas, and then post-processed with _O2 gas, or _O2 gas and _CF4 gas. sketch map. [FIG. 10] FIG. 10 is a schematic plan view showing a processing system for implementing the processing method of the second embodiment. [FIG. 11] FIG. 11 is a cross-sectional view showing a plasma etching apparatus mounted in the processing system of FIG. 11. [FIG. [ Fig. 12 ] Fig. 12 is a cross-sectional view showing the structure of a substrate and an electrostatic chuck according to a second embodiment. [ Fig. 13 ] Fig. 13 is a cross-sectional view showing an example of vapor pressure. [ Fig. 14 ] Fig. 14 is a cross-sectional view showing an example of a linear expansion coefficient. [Fig. 15] Fig. 15 is a flow chart showing the plasma treatment method according to the second embodiment. [FIG. 16] FIG. 16 is a schematic diagram showing a reaction product generated in a chamber when a Mo-based material film is etched using SF ₆ gas as a processing gas. [FIG. 17] FIG. 17 is a schematic diagram showing reaction products generated in a chamber when a Mo-based material film is etched using SF ₆ gas and O ₂ gas as processing gases.

131‧‧‧Substrate

132‧‧‧Electrostatic Chuck

145‧‧‧Insulation layer

145a‧‧‧Upper insulating layer

145b‧‧‧The lower insulating layer

146‧‧‧Adsorption electrode

Claims (5)

A plasma processing device comprising: an insulating layer formed of aluminum oxide, yttrium oxide, and a silicon compound that constitutes a mounting surface of a mounting table on which an object to be processed to be subjected to plasma processing is mounted; provided in the insulating layer , formed of a nickel-containing metal or a chromium-containing metal, an adsorption electrode that adsorbs an object to be processed by applying a predetermined voltage; The lower insulating layer is formed on the opposite side of the adsorption electrode to the object to be processed, and the sealing treatment by the sealing member is performed only on the lower insulating layer. The plasma processing device as described in claim 1, wherein the plasma processing is plasma etching using a chlorine-containing gas plasma, and the adsorption electrode is formed of nickel-containing metal. The plasma treatment device according to claim 1, wherein the plasma treatment is a plasma etching treatment using plasma of a fluorine-containing gas, and the adsorption electrode is formed of a chromium-containing metal. The plasma treatment device according to claim 2, wherein the adsorption electrode is formed of any one of Ni-5Al, SUS316L, and Hastelloy. The plasma processing device according to any one of Claims 1 to 4 further includes: a base material formed of stainless steel supporting the insulating layer.

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