JP7228539B2 - switch device - Google Patents

Description

Embodiments of the present invention relate to switching devices.

For example, it is desirable to switch large currents in switching devices.

U.S. Patent Application Publication No. 2016/0020057A1

One embodiment provides a switch device capable of switching large currents.

According to one embodiment, the switch device comprises a first electrode comprising a first layer comprising at least one selected from the group consisting of B, C, Al, Si, and Ga; , a second electrode remote from the first electrode, a first grid provided between the first electrode and the second electrode, and a second grid provided between the first grid and the second electrode; Prepare. Further provided between the first electrode and the second electrode is a gas containing at least one of argon, helium, and hydrogen.

1(a) to 1(c) are schematic cross-sectional views illustrating the switch device according to the embodiment. FIG. 2 is a graph diagram illustrating experimental results regarding the switch device. FIGS. 3A and 3B are schematic diagrams illustrating switch devices. FIG. 4 is a schematic perspective cross-sectional view illustrating the switch device according to the embodiment. FIG. 5 is a schematic cross-sectional view illustrating the switch device according to the embodiment.

Each embodiment of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each portion, the size ratio between portions, and the like are not necessarily the same as the actual ones. Even when the same parts are shown, the dimensions and ratios may be different depending on the drawing.
In the present specification and each figure, the same reference numerals are given to the same elements as those described above with respect to the previous figures, and detailed description thereof will be omitted as appropriate.

(First embodiment)
1(a) to 1(c) are schematic cross-sectional views illustrating the switch device according to the embodiment.
As shown in FIG. 1( a ), the switch device 110 according to the embodiment includes a container 50 , a first electrode 10 , a second electrode 20 , a first grid 31 and a second grid 32 .

A first electrode 10 is provided in a container 50 . First electrode 10 includes a first layer 15 . The first electrode 10 may include a base member 11 . For example, a first layer 15 is provided on the base member 11 . The first layer 15 contains at least one selected from the group consisting of B, C, Al, Si, and Ga. In one example, first layer 15 comprises diamond. For example, the first layer 15 contains carbon. The first layer 15 may contain carbon and B. For example, the first layer 15 may contain AlN. As will be described later, the first layer 15 may contain multiple crystal grains. At least part of the first layer 15 may be amorphous. The first layer 15 includes, for example, a first element containing at least one selected from the group consisting of B, C, Al, Si, and Ga, and at least one element selected from the group consisting of N, O, and P. and a second element comprising The first layer 15 may contain a wide bandgap semiconductor.

In one example, the first layer 15 comprises diamond, graphite, nitride semiconductor ( _{AlxGayN1 -xy, 0≤x≤1} , 0≤y≤1) and alumina cement (CaO —Al ₂ O ₃ ). In one example, the first layer 15 comprises diamond, graphite, nitride semiconductor ( _{AlxGayN1 -xy, 0≤x≤1} , 0≤y≤1) and alumina cement (CaO -Al ₂ O ₃ ). The conductivity type of diamond and nitride semiconductors is p-type or n-type. The alumina cement may contain additives such as FeO ₂ , TiO ₂ and SiO ₂ . Diamond includes sintered diamond. Diamond includes polycrystalline diamond.

The first electrode 10 includes a form in which the first electrode 10 is configured by the first layer 15 without including the base member 11 .

A second electrode 20 is provided in the container 50 . The second electrode 20 separates from the first electrode 10 . For example, first layer 15 is between base member 11 and second electrode 20 . A gap 80 is provided between the first layer 15 and the second electrode 20 .

Let the direction from the first electrode 10 to the second electrode 20 be the Z-axis direction. The second electrode 20 is separated from the first layer 15 in the Z-axis direction.

A first grid 31 is provided in the container 50 . A first grid 31 is provided between the first electrode 10 and the second electrode 20 . A first grid 31 is provided between the first layer 15 and the second electrode 20 .

A second grid 32 is provided within the container 50 . A second grid 32 is provided between the first grid 31 and the second electrode 20 .

Gas 80G can be introduced into container 50 when switch device 110 is in use. Switch device 110 may include gas 80G. A gas 80 G is provided between the first electrode 10 and the second electrode 20 . A gas 80G fills the gap 80 . Gas 80G includes, for example, at least one of helium, neon, and argon. In one example, gas 80G includes argon. Gas 80G may include argon and hydrogen.

The container 50 can keep the space 80S inside the container 50 airtight. The air pressure of the space 80S inside the container 50 is, for example, less than 1 atmosphere. The space 80S can have a reduced pressure.

The container 50 is preferably an airtight container capable of keeping the space 80S inside the container 50 airtight.

As shown in FIG. 1(a), the switch device 110 may include a first terminal T1, a second terminal T2, a third terminal T3 and a fourth terminal T4. The first terminal T1, the second terminal T2, the third terminal T3 and the fourth terminal T4 are provided outside the container 50. As shown in FIG. The first terminal T1 is electrically connected to the first electrode 10 . The second terminal T2 is electrically connected to the second electrode 20 . A third terminal T3 is electrically connected to the first grid 31 . The third terminal T3 is electrically connected with the second grid 32 .

A plurality of states (such as a first state and a second state) are provided in the switch device 110 based on the potentials of these terminals.

FIG. 1B illustrates the first state ST1. In the first state ST1, the first terminal T1 is set to the first potential V1, the second terminal T2 is set to the second potential V2, the third terminal T3 is set to the third potential V3, and the fourth terminal T4. is set to the fourth potential V4. The second potential V2 is higher than the first potential V1. The third potential V3 is between the first potential V1 and the second potential V2. The fourth potential V4 is lower than the third potential V3.

The first potential V1 is, for example, a negative potential or a ground potential. The second potential V2 is, for example, a positive potential. The third potential V3 is, for example, an intermediate potential. The fourth potential V4 is, for example, a negative potential.

FIG. 1(c) illustrates the second state ST2. In the second state ST2, the first terminal T1 is set to the first potential V1, the second terminal T2 is set to the second potential V2, the third terminal T3 is set to the third potential V3, and the fourth terminal T4 is set to the third potential V3. It is set to the fifth potential V5. The fifth potential V5 is higher than the third potential V3. The fifth potential V5 is, for example, a positive potential.

The current flowing between the first terminal T1 and the second terminal T2 in the second state ST2 is larger than the current flowing between the first terminal T1 and the second terminal T2 in the first state ST1.

The first state ST1 is, for example, a non-conducting state. The second state ST2 is, for example, a conducting state. The first state ST1 is, for example, a high resistance state. The second state ST2 is, for example, a low resistance state.

In this manner, the switching operation is performed in the switching device 110 . The switch device 110 is, for example, a circuit breaker. The switch device 110 is, for example, a circuit breaker for high current. The first electrode 10 is, for example, a cathode. The second electrode 20 is, for example, an anode.

As shown in FIG. 1B, a first plasma 81P is generated in the first space 81 between the first electrode 10 and the first grid 31 in the first state ST1. In the first state ST1, the space between the first grid 31 and the second electrode 20 is in an insulating state. In the first state ST1, the switch device 110 is non-conducting.

As shown in FIG. 2C, in the second state ST2, the second plasma 82P is generated in the second space 82 between the first grid 31 and the second grid 32, and the second grid 32 and the second electrode 20 A third plasma 83P is generated in the third space 83 between. As a result, the third space 83 becomes conductive. In the second state ST2, a conductive state is established between the first terminal T1 and the second terminal T2.

In embodiments, the first layer 15 includes a first material including at least one selected from the group consisting of B, C, Al, Si, and Ga. In one example, first layer 15 includes, for example, diamond. Diamond, for example, has a low electron affinity. Electrons are thereby efficiently emitted from the first layer 15 . Thereby, a large current can be obtained.

The first material is, for example, diamond, graphite, nitride semiconductor (Al _x Ga _y N _1-xy, 0 ≤ x ≤ 1, 0 ≤ y ≤ 1), sintered diamond and alumina cement (CaO —Al ₂ O ₃ ). The first material is, for example, diamond, graphite, nitride semiconductor (Al _x Ga _y N _1-xy, 0 ≤ x ≤ 1, 0 ≤ y ≤ 1), sintered diamond and alumina cement (CaO -Al ₂ O ₃ ), a single-layer structure or a diamond, graphite, nitride semiconductor (Al _x Ga _y N _1-xy, 0 ≤ (x≦1, 0≦y≦1), sintered diamond, and alumina cement (CaO—Al ₂ O ₃ ). .

Nitride semiconductors and oxide semiconductors also have low electron affinities, so these materials are also preferable from the viewpoint of switching large currents. Since sintered diamond is mainly composed of diamond, it has low electron affinity. Graphite is also preferable due to its high thermal conductivity and thermal stability due to its strong chemical bond. Electrolyzed alumina cement is preferable because of its low electron affinity.

The first material that emits electrons is provided on the surface of the first layer 15 facing the second electrode 20 from the viewpoint of efficiently emitting electrons from the first electrode 10 to the second electrode 20 . The first material that emits electrons is provided on the entire surface of the first layer 15 facing the second electrode 20 from the viewpoint of efficiently emitting electrons from the first electrode 10 to the second electrode 20 .

For example, there is a first reference example in which the first electrode 10 contains a conductive liquid. For example, there is a second reference example in which the first electrode 10 contains a metal with a low melting point. In these cases, good flatness is obtained on the surface of the first electrode 10 during operation. It is believed that this makes it easier to obtain relatively stable operation. However, in these reference examples, the current that can be switched is small.

In contrast, in embodiments, the first layer 15 of the first electrode 10 comprises the first material described above. The first layer 15 has a low electron affinity. Thereby, electrons from the first layer 15 are efficiently emitted. Thereby, a large current can be stably switched. According to the embodiments, it is possible to provide a switch device capable of switching a large current.

For example, in switch device 110, current flows during operation. This current can etch the cathode (eg, the first electrode 10). In embodiments, the first layer 15 is stable because the first layer 15 contains the above materials. For example, etching of the first layer 15 during operation can be suppressed. For example, longer life is obtained.

Since the first layer 15 containing the first material has high etching resistance, it is difficult to etch during the switching operation. Therefore, the switch device 110 of the embodiment can stably operate for a long period of time.

The thermal conductivity of the first material included in the first layer 15 is high. This suppresses the temperature rise of the first layer 15 . For example, excessive temperature rise can be suppressed. For example, the occurrence of arc discharge can be suppressed. This provides stable operation.

By using the first layer 15 for the first electrode 10, the temperature rise of the first layer 15 can be suppressed. When the temperature of the first layer 15 rises, it is likely to shift from a glow discharge state in which switch operation is possible to an arc discharge state in which the current cannot be interrupted. By suppressing the temperature rise of the first layer 15, arc discharge is suppressed, stable glow discharge is possible, and the switch device 110 with stable operation and high reliability can be provided.

An example of experimental results regarding the switch device will be described below.
FIG. 2 is a graph diagram illustrating experimental results regarding the switch device.
The horizontal axis of FIG. 2 represents the current Ic (A) flowing between the first terminal T1 and the second terminal T2 in the second state ST2. The vertical axis is the voltage Vs (V) between the first terminal T1 and the second terminal T2.

In the experiment, a source meter was connected between the first terminal T1 and the second terminal T2, and the relationship between the current Ic and the voltage Vs was measured by increasing the current Ic flowing from the current source over time while simultaneously measuring the voltage Vs. obtained.

FIG. 2 illustrates results for the first sample SP1, the second sample SP2, and the third sample SP3. In the first sample SP1, the first layer 15 is diamond. In the second sample SP2, the first layer 15 is AlGaN. In the third sample SP3, the first layer 15 is Mo. In these samples, the distance between the first electrode 10 and the second electrode 20 is 10 mm. A space 80S of the container 50 is filled with a gas 80G containing argon and hydrogen. The amount of hydrogen relative to the total amount of argon and hydrogen is 1%. The pressure in vessel 50 is 1 Torr.

In the first to third samples SP1 to SP3, increasing the voltage Vs increases the current Ic. A glow discharge from the first layer 15 is obtained even in the region of high current in each sample.

Thus, in the second sample SP2 in which the first layer 15 is AlGaN, switching of a larger current is possible than in the case of using Mo for the first layer 15 . In the first sample SP1 in which the first layer 15 is diamond, switching of a larger current is possible than in the case of using Mo for the first layer 15 .

As shown in FIG. 2, in each sample there is a region where the voltage Vs is substantially flat in the region of relatively low current Ic. Low losses are obtained when the voltage Vs in this region is small. As shown in FIG. 2, this voltage Vs on the first sample SP1 is smaller than this voltage on the third sample SP3. This corresponds to the fact that the loss of the first sample SP1 is smaller than that of the third sample SP3. As shown in FIG. 2, this voltage Vs on the second sample SP2 is smaller than this voltage on the first sample SP1. This corresponds to the fact that a smaller loss is obtained in the second sample SP2 than in the first sample SP1.

Thus, a higher voltage is obtained in the first sample SP1 and the second sample SP2 than in the third sample SP3. It is considered that this is because the first layer 15 in the first sample SP1 and the second sample SP2 contains the above first material.

For example, the electron affinity of the first layer 15 (eg, first material) is 3 eV or less. This facilitates the emission of electrons from the first layer 15 . The electron affinity of the first layer 15 (eg, first material) may be negative.

For example, the bandgap of the first layer 15 (eg, first material) is 2 eV or more. This makes it easier to obtain a small electron affinity. The first layer 15 may contain, for example, a wide bandgap semiconductor.

A thickness t15 (see FIG. 1A) of the first layer 15 is preferably, for example, 0.1 μm or more and 5 mm or less. High uniformity can be easily obtained in the first layer 15 . Easy to obtain stable characteristics. The thickness t15 is the length of the first layer 15 along the direction perpendicular to the Z-axis direction.

When the first layer 15 contains carbon (for example, diamond), the surface of the first layer 15 may be terminated with hydrogen. This allows, for example, a lower electron affinity.

For example, first layer 15 includes first surface 15f. The first surface 15 f faces the second electrode 20 . The first surface 15 f faces the first grid 31 . The first surface 15f may contain hydrogen. This allows, for example, a lower electron affinity.

In order to stabilize the glow discharge, it is preferable that the crystal planes (the planes facing the second electrode 20 side) of the first layer 15 (the first plane 15f) are aligned. If the crystal planes are random, the stability of glow discharge will vary.

FIGS. 3A and 3B are schematic diagrams illustrating switch devices.
These figures are schematic plan views drawn based on an electron micrograph image of the surface (first surface 15f) of the first layer 15. FIG. FIG. 3(a) corresponds to the sample SP11. FIG. 3(b) corresponds to sample SP12. In these samples, the first layer 15 is diamond. These samples differ from each other in the formation conditions of the first layer 15 . In the sample SP11, the first layer 15 is formed under formation conditions in which the (100) plane is dominant. In the sample SP12, the first layer 15 is formed under formation conditions in which the (111) plane is dominant. For example, the temperature in forming the sample SP11 is higher than the temperature in forming the sample SP12. For example, the carbon concentration in the source gas for forming the sample SP11 is lower than the carbon concentration in the source gas for forming the sample SP12.

As shown in FIG. 3A, in the sample SP11, the (100) plane of diamond is along the first plane 15f. For example, one face (rectangular face) of the diamond crystal grain 15g is along the first face 15f. In this case, the surface of the fine structure of the first surface 15f is substantially perpendicular to the Z-axis direction.

The (100) plane of diamond along the first plane 15f means, for example, that the first plane 15f of the first layer 15 facing the second electrode 20 has a rectangular crystal plane ((100) plane) of 1 μm ² or more. ratio (the ratio of the number of crystals whose crystal plane facing the second electrode 20 is 1 μm ² or more and is rectangular) is 80% or more. From the above point of view, it is preferable that the first surface 15f of the first layer 15 facing the second electrode 20 has a rectangular crystal plane of 3 μm ² or more and a ratio of 80% or more. By observing the surface of the first layer 15 with a microscope, the ratio of rectangular crystal planes of 1 μm ² or more (3 μm ² or more) in the first surface 15f can be obtained. For example, it is preferable to observe a 1 mm×1 mm region in the center of the first layer 15 to evaluate the crystal plane of the first surface 15f. If the first face 15f is a crystal face as shown in FIG. 3A, the ratio of the rectangular crystal face ((100) face) of 1 μm ² or more (3 μm ² or more) is 100%. The evaluation of the crystal plane is performed by observing the outermost crystal that does not overlap with other crystals on the second electrode 20 side.

When the first layer 15 is a nitride semiconductor, the c-plane of the nitride semiconductor is preferably along the first surface 15f from the viewpoint of glow discharge stabilization and large current characteristics. That the c-plane of the nitride semiconductor is along the first plane 15f means, for example, that the first plane 15f of the first layer 15 facing the second electrode 20 has a hexagonal crystal plane (c-plane) of 1 μm ² or more. The ratio (the ratio of the number of crystals whose crystal faces facing the second electrode 20 are 1 μm ² or more and have a hexagonal shape) is 80% or more. From the above point of view, it is preferable that the first surface 15f of the first layer 15 facing the second electrode 20 has a size of 3 μm ² or more and a ratio of hexagonal crystal planes of 80% or more. By observing the surface of the first layer 15 with a microscope, the ratio of hexagonal crystal planes of 1 μm ² or more (3 μm ² or more) in the first surface 15f can be obtained. For example, it is preferable to observe a 1 mm×1 mm region in the center of the first layer 15 to evaluate the crystal plane of the first surface 15f. The evaluation of the crystal plane is performed by observing the outermost crystal that does not overlap with other crystals on the second electrode 20 side.

As shown in FIG. 3B, in sample SP12, 15 g of tetrahedral crystal grains containing the (111) plane of diamond are obtained. In this case, the surface of the fine structure of the first surface 15f is inclined with respect to the Z-axis direction.

If the first plane 15f is a crystal plane as shown in FIG. 3A, the ratio of the crystal plane ((100) plane) having a rectangular shape of 1 μm ² or more is 0%.

The surface unevenness of the fine structure of the first surface 15f of the sample SP11 is smaller than the surface unevenness of the fine structure of the first surface 15f of the sample SP12. The first surface 15f of the sample SP11 is flatter than the first surface 15f of the sample SP12.

In the sample SP11, the surface of the first layer 15 (first surface 15f) is more stable than in the sample SP12. More stable characteristics can be obtained.

Since the first surface 15f of the sample SP11 is a flat rectangular surface, there are few sharp portions on the first surface 15f, and electrons are emitted from the entire first surface 15f, thereby stabilizing glow discharge. However, since the first surface 15f of the sample SP12 has a small rectangular top surface and is substantially composed of square pyramid-like crystals, the emission of electrons is locally concentrated and shifts from glow discharge to arc discharge. Cheap. Also from the viewpoint of etching resistance, the switch device 110 using the sample SP11 from which electron emission is difficult to concentrate locally as the first layer 15 is preferable.

The first surface 15f of the first layer 15 is preferably along the (100) plane. More stable characteristics can be obtained.

An example of X-ray diffraction characteristics of the first layer 15 when the first layer 15 is diamond will be described below.

For example, in the X-ray diffraction of the diamond first layer 15, the peak at an angle 2θ of about 41.9 degrees corresponds to the (111) plane crystal. The peak at an angle 2θ of about 75.3 degrees corresponds to the (220) face of the crystal. The peak at an angle 2θ of about 91.5 degrees corresponds to a (311) plane crystal. The peak at an angle 2θ of about 119.5 degrees corresponds to a (400) plane crystal.

In embodiments, for example, the X-ray diffraction of the first layer 15 yields a peak at about 119.5 degrees, corresponding to a (400) plane crystal. Crystals of various orientations may exist at deep positions in the thickness direction of the first layer 15 . Therefore, peaks corresponding to other orientations may also occur. For example, in the embodiment, the first peak of the first intensity obtained from the first layer 15 when the angle 2θ of X-ray diffraction is 119° or more and 120° or less is 41.5° or more and 42.5° or more. It is 0.2 times or more the second peak of the second intensity obtained from the first layer 15 below. For example, it is easy to obtain stable characteristics.

In the embodiment, the first layer 15 includes, for example, a plurality of crystal grains 15g (see FIG. 3(a)). The size of one of the plurality of crystal grains 15g (length d15 shown in FIG. 3A) is preferably, for example, 0.1 μm or more and 100 μm or less. This makes it easier to obtain stable characteristics.

The first layer 15 can be formed, for example, on the base member 11 by vapor deposition using a raw material containing the first material. The base member 11 contains, for example, at least one selected from the group consisting of Mo, W, Nb, Ta, Si and Cu. The second electrode 20 contains, for example, at least one selected from the group consisting of Ni, Cr, Mo, Cu, Ag, Au, Fe, Ir and Pt. The first grid 31 and the second grid 32 are, for example, mesh-like or stripe-like. Any configuration can be applied to the first grid 31 and the second grid 32 .

A first material having excellent thermal conductivity can be used for the base member 11 .

(Second embodiment)
The second embodiment is a modification of the first embodiment.
FIG. 4 is a schematic perspective cross-sectional view illustrating the switch device according to the embodiment.
FIG. 5 is a schematic cross-sectional view illustrating the switch device according to the embodiment.
As shown in FIG. 4 , the switch device 120 includes a first electrode 10 , a second electrode 20 , a first grid 31 and a second grid 32 . The switch device 120 of the second embodiment is basically the same as the switch of the first embodiment except that the first electrode 10, the second electrode 20, the first grid 31 and the second grid 32 are coaxially arranged. Common with device 110 . Descriptions of items common to the switch device 110 of the first embodiment and the switch device 120 of the second embodiment will be omitted.

The switch device 120 is arranged outside in the order of the second grid 32 , the first grid 31 , and the first electrode 10 with the second electrode 20 at the center. The first electrode 10 is the container 50 of the switch device 120 .

Although the first terminal T1, the second terminal T2, the third terminal T3, and the fourth terminal T4 are not shown, for example, the first terminal T1 is electrically connected to the first electrode 10, and the second terminal T2 is , the second electrode 20 , the third terminal T<b>3 is electrically connected to the first grid 31 , and the third terminal T<b>3 is electrically connected to the second grid 32 .

The first electrode 10 is a container 50 that houses the second electrode 20 , first grid 31 and second grid 32 . A first layer 15 is arranged on the inner wall side of the first electrode 10 . Since the first material contained in the first layer 15 has excellent thermal conductivity, the first electrode 10 may be configured with the first layer 15 on the inner wall side and the base member 11 on the outer wall side. including both forms consisting of

The base member 11 of the second embodiment preferably has both pressure resistance and thermal conductivity as the container 50 . The base member 11, which has both pressure resistance and thermal conductivity and constitutes the outer wall of the first electrode 10, is selected from the group consisting of sintered diamond, polycrystalline diamond, graphite, nitride semiconductor, and alumina cement. Includes one or more The base member 11, which has both pressure resistance and thermal conductivity and constitutes the outer wall of the first electrode 10, is selected from the group consisting of sintered diamond, polycrystalline diamond, graphite, nitride semiconductor, and alumina cement. 2 layers composed of one or more layers selected from the group consisting of sintered diamond, polycrystalline diamond, graphite, nitride semiconductors, and alumina cement It includes laminates that are laminated with more than one layer.

When the second grid 32, the first grid 31, and the first electrode 10 are arranged so as to draw concentric circles with the second electrode 20 as the center, the symmetry is good, so that large current characteristics are excellent and glow discharge is achieved. stabilizes.

By adopting the coaxial structure, unintended discharge can be prevented by a uniform electric field, and the reliability of the switch device 120 is improved.

By adopting the coaxial structure, the entire inner wall of the container 50 can be used as a cathode, so the area ratio of the first electrode 10, which is the cathode, is increased, making it suitable for switching a larger amount of current.

By adopting the coaxial structure, the electric field increases toward the second electrode 20, which is the anode, so electron avalanche can be promoted and the current amplification effect is increased.

By adopting a coaxial structure, the electric field is relatively weakened near the cathode, and the kinetic energy of positive ions colliding with the cathode is reduced, which suppresses damage to the cathode and extends its life.

As an example of the manufacturing method of the first electrode 10, a filament is attached inside a cylindrical base material 11, a carbon source is supplied, and a diamond film is formed as a first layer 15 inside the base material 11 by thermal CVD. There is a way.

According to the embodiments, it is possible to provide a switch device capable of switching a large current.

The embodiments of the present invention have been described above with reference to specific examples. However, the invention is not limited to these specific examples. For example, a person skilled in the art can carry out the present invention in the same manner by appropriately selecting the specific configuration of each element such as the electrode, the first layer, the grid, and the container included in the switch device from the range known to those skilled in the art. As long as the effect can be obtained, it is included in the scope of the present invention.

Any combination of two or more elements of each specific example within the technically possible range is also included in the scope of the present invention as long as it includes the gist of the present invention.

In addition, based on the switch device described above as an embodiment of the present invention, all switch devices that can be implemented by those skilled in the art by appropriately modifying the design also belong to the scope of the present invention as long as they include the gist of the present invention. .

In addition, within the scope of the idea of the present invention, those skilled in the art can conceive of various modifications and modifications, and it is understood that these modifications and modifications also belong to the scope of the present invention. .

While several embodiments of the invention have been described, these embodiments have been presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and modifications can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the scope of the invention described in the claims and equivalents thereof.

Reference Signs List 10 First electrode 11 Base member 15 First layer 15f First surface 15g Crystal grain 20 Second electrode 31 First grid 32 Second grid 50 Container 80 Gap 80G Gas 80S Space 81 to 83 First to third spaces 81P to 83P First to third plasma 110 Switch device Ic Current SP1 to SP3 First to Third sample SP11, SP12 Sample ST1, ST2 First and second states T1 to T4 First to fourth terminals V1 to V5 First to fifth potentials Vs Voltage d15 Length t15...thickness

Claims (20)

a first electrode including a first layer including at least one selected from the group consisting of B, C, Al, Si, and Ga;
a second electrode remote from the first electrode;
a first grid provided between the first electrode and the second electrode;
a second grid provided between the first grid and the second electrode;
with
A switch device provided between the first electrode and the second electrode and further comprising a gas containing at least one of argon, helium and hydrogen. 2. The switch device according to claim 1, wherein said first layer contains at least one selected from the group consisting of diamond, graphite, nitride semiconductor and alumina cement. a first electrode including a first layer including at least one selected from the group consisting of B, C, Al, Si, and Ga;
a second electrode remote from the first electrode;
a first grid provided between the first electrode and the second electrode;
a second grid provided between the first grid and the second electrode;
with
The switch device, wherein the first layer contains at least one selected from the group consisting of diamond, nitride semiconductor and alumina cement. 4. The switch device of claim 3, wherein said first layer comprises a plurality of grains. 5. The switch device according to claim 4, wherein the size of one of said plurality of crystal grains is 0.1 [mu]m or more and 100 [mu]m or less. the first layer includes a first surface facing the second electrode;
The switch device according to any one of claims 3 to 5, wherein said first surface comprises hydrogen. the first layer includes a first surface facing the second electrode;
the first surface comprises diamond;
The switch device according to any one of claims 3 to 6, wherein said diamond of said first face is along a (100) plane. The first peak of the first intensity obtained from the first layer when the angle 2θ of X-ray diffraction is 119° or more and 120° or less is obtained from the first layer when the angle 2θ is 41.5° or more and 42.5° or less. 8. Switching device according to any one of the preceding claims, wherein the second intensity obtained is at least 0.2 times the second peak. the first layer includes a first surface facing the second electrode;
the first surface comprises Al _x Ga _y N _1-xy ;
x of Al _x Ga _y N _1-xy satisfies 0≦x≦1,
y of Al _x Ga _y N _1-xy satisfies 0≦y≦1,
The switch device according to any one of claims 1 to 6, wherein the Al _x Ga _y N _1-xy of said first plane is along the c-plane. The switch device according to any one of claims 1 to 9, wherein the electron affinity of said first layer is 3 eV or less. The switch device according to any one of claims 1 to 10, wherein the bandgap of said first layer is 2 eV or more. The switch device according to any one of claims 1 to 11, wherein the first layer has a thickness of 0.1 µm or more and 5 mm or less. a first terminal electrically connected to the first electrode;
a second terminal electrically connected to the second electrode;
a third terminal electrically connected to the first grid;
a fourth terminal electrically connected to the second grid;
the current flowing between the first terminal and the second terminal in the second state is larger than the current flowing between the first terminal and the second terminal in the first state;
In the first state, the first terminal is set to a first potential, the second terminal is set to a second potential higher than the first potential, and the third terminal is set to the first potential and the second potential. and the fourth terminal is set to a fourth potential lower than the third potential,
In the second state, the first terminal is set to the first potential, the second terminal is set to the second potential, the third terminal is set to the third potential, and the fourth terminal is set to the third potential. The switch device according to any one of claims 1 to 12, which is set to a fifth potential higher than said third potential. 14. The switch device of claim 13, wherein in said first state a first plasma is generated in a first space between said first electrode and said first grid. 15. Switching device according to claim 13 or 14, wherein in said second state a second plasma is generated in a second space between said first grid and said second grid. 16. The switch device of claim 15, wherein in said second state a third plasma is generated in a third space between said second grid and said second electrode. further comprising a container,
The switch device according to any one of claims 1 to 16, wherein said first electrode, said second electrode, said first grid and said second grid are provided within said container. further comprising a container,
the first electrode, the second electrode, the first grid and the second grid are provided in the container;
The container is a closed container,
The switch device according to any one of claims 13 to 16, wherein the first terminal, the second terminal, the third terminal and the fourth terminal are provided outside the container. The first electrode is a container that houses the second electrode, the first grid and the second grid,
The first electrode, the first grid and the second grid are arranged coaxially around the second electrode,
The switch device according to any one of claims 1 to 16, wherein the first layer is provided on an inner wall of the first electrode facing the second electrode. 20. The outer wall of the first electrode on the side opposite to the first layer side contains one or more selected from the group consisting of sintered diamond, polycrystalline diamond, graphite, nitride semiconductor and alumina cement according to claim 19. switch device.

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