CN107607051B - A kind of film thickness detecting device - Google Patents
A kind of film thickness detecting device Download PDFInfo
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- CN107607051B CN107607051B CN201711013570.4A CN201711013570A CN107607051B CN 107607051 B CN107607051 B CN 107607051B CN 201711013570 A CN201711013570 A CN 201711013570A CN 107607051 B CN107607051 B CN 107607051B
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Abstract
The invention discloses a kind of film thickness detecting devices, comprising: laser light source, optics microscope group, picture receiver；Wherein, optics microscope group interferes the first light beam with the second light beam for receiving the laser of laser light source outgoing, generating the first light beam and penetrating the second light beam of film to be measured at least twice；Picture receiver determines the thickness of film according to interference information for receiving interference light and determining interference information.Film thickness detecting device provided in an embodiment of the present invention repeatedly measures the thickness of film using laser through the laser interference information after film to be measured, the change in optical path length of light can perceive small refractive index and distance change, thus by change in optical path length determine the sensitivity of film thickness compared with the prior art in the way of improve a lot.
Description
Technical field
The present invention relates to field of display technology, espespecially a kind of film thickness detecting device.
Background technique
Main flow display used at present, either liquid crystal display or organic light emitting diode display, all make
It is controlled and is driven with thin film transistor (TFT), therefore, in field of display technology, the production technology of large area film transistor base belongs to non-
Often important technology.The production of thin film transistor (TFT) briefly, exactly deposits a variety of different films on substrate, for example, golden
Belong to layer, semiconductor layer etc., then specific figure is formed with etching technics, to form thin film transistor (TFT) in specific region.It is thin
Film transistor has a very important role to the working performance of display device, and in the manufacturing process of thin film transistor (TFT), respectively
The thickness and shape of film layer can impact final display device, excessive or too small in case of thickness, thicknesses of layers
Situations such as uneven, often caused by TFT substrate large area display it is bad.
In the prior art, it needs to measure the thickness of film when the film is formed, usually be penetrated using measurement film
Rate or reflectivity of optical thin film determine the thickness of film, but during making film deposition, to the thin of certain some material
Film, or same material film in setting thickness range light be not obvious in the penetrance and reflectivity of film
Or difference is little, therefore, the method sensitivity that the prior art surveys film thickness is not high.
Summary of the invention
The embodiment of the present invention provides a kind of film thickness detecting device, to improve detection sensitivity.
In a first aspect, the embodiment of the present invention provides a kind of film thickness detecting device, comprising: laser light source, optics microscope group and
Picture receiver；Wherein,
The optics microscope group generates the first light beam and saturating at least twice for receiving the laser of laser light source outgoing
The second light beam for crossing film to be measured interferes first light beam with second light beam；
Described image receiver determines film according to the interference information for receiving interference light and determining interference information
Thickness.
In one possible implementation, in above-mentioned film thickness detecting device provided in an embodiment of the present invention, the light
Learn microscope group, comprising: semi-transparent semi-reflecting lens and total reflection mirror；
The semi-transparent semi-reflecting lens and the total reflection mirror are plane mirror.
In one possible implementation, in above-mentioned film thickness detecting device provided in an embodiment of the present invention, described half
Saturating semi-reflective mirror and at least one described total reflection mirror constitute reflection cavity configuration；
Light path in the reflection cavity configuration is the integral multiple of optical maser wavelength.
In one possible implementation, in above-mentioned film thickness detecting device provided in an embodiment of the present invention, described half
Saturating semi-reflective mirror includes: the first semi-transparent semi-reflecting lens and the second semi-transparent semi-reflecting lens；
First semi-transparent semi-reflecting lens, second semi-transparent semi-reflecting lens and the total reflection mirror are respectively positioned on described image and connect
Receive the underface of device；First semi-transparent mirror and the film to be measured of partly returning is in setting angle；It is second semi-transparent semi-reflecting lens, described complete
Reflecting mirror and the film to be measured are parallel to each other；
First semi-transparent semi-reflecting lens and second semi-transparent semi-reflecting lens are located at the film to be measured and described image receives
Between device, the total reflection mirror is located at the side that the film to be measured deviates from second semi-transparent semi-reflecting lens；
First semi-transparent semi-reflecting lens, the laser for receiving the laser light source outgoing enter to second semi-transparent semi-reflecting lens
It penetrates；
Second semi-transparent semi-reflecting lens form described for received fraction of laser light to be reflected into described image receiver
One light beam, while received fraction of laser light being transmitted and passes through the film to be measured to the total reflection mirror incidence, to described complete
It transmits to form second light beam to described image receiver after reflecting mirror reflection.
In one possible implementation, in above-mentioned film thickness detecting device provided in an embodiment of the present invention, described half
Saturating semi-reflective mirror and the total reflection mirror are respectively positioned on the underface of described image receiver；
The film to be measured and the total reflection mirror are parallel to each other；The semi-transparent semi-reflecting lens are located at described image receiver
Between the film to be measured, the total reflection mirror is located at the side that the film to be measured deviates from the semi-transparent semi-reflecting lens；
Received fraction of laser light is transmitted to described image for receiving the laser of vertical incidence by the semi-transparent semi-reflecting lens
Receiver forms first light beam, while received fraction of laser light being reflected and passes through the film to be measured to the total reflection
Mirror is incident, transmits to form second light beam to described image receiver after total reflection mirror reflection.
In one possible implementation, described complete in above-mentioned film thickness detecting device provided in an embodiment of the present invention
Reflecting mirror includes: the first total reflection mirror and the second total reflection mirror；
The semi-transparent semi-reflecting lens and first total reflection mirror are located at the underface of described image receiver；Described semi-transparent half
Anti- mirror is parallel to each other with the film to be measured；The semi-transparent semi-reflecting lens be located at described image receiver and the film to be measured it
Between, first total reflection mirror, second total reflection mirror are respectively positioned on one that the film to be measured deviates from the semi-transparent semi-reflecting lens
Side；First total reflection mirror and second total reflection mirror are with the film to be measured in setting angle；
First total reflection mirror, for receive and reflect the laser of laser light source outgoing to the film to be measured with
And the semi-transparent semi-reflecting lens vertical exit；
Received fraction of laser light is transmitted to described image for receiving the laser of vertical incidence by the semi-transparent semi-reflecting lens
Receiver forms first light beam, while received fraction of laser light being reflected and to pass through the film to be measured complete to described first
Reflecting mirror and second total reflection mirror are incident, the Xiang Suoshu after first total reflection mirror and second total reflection mirror reflection
Picture receiver transmits to form second light beam.
In one possible implementation, described complete in above-mentioned film thickness detecting device provided in an embodiment of the present invention
Reflecting mirror includes: third total reflection mirror, the 4th total reflection mirror and the 5th total reflection mirror；The semi-transparent semi-reflecting lens and the third are complete
Reflecting mirror is located at the underface of described image receiver；The semi-transparent semi-reflecting lens, the 5th total reflection mirror with it is described to be measured thin
Film is parallel to each other；The third total reflection mirror and the 4th total reflection mirror are with the film to be measured in setting angle；It is described
Semi-transparent semi-reflecting lens are located between described image receiver and the film to be measured；
The third total reflection mirror, the 4th total reflection mirror and the 5th total reflection mirror are respectively positioned on described to be measured thin
Film deviates from the side of the semi-transparent semi-reflecting lens；Alternatively,
The third total reflection mirror, the 4th total reflection mirror are located at the film to be measured away from the semi-transparent semi-reflecting lens
Side, the 5th total reflection mirror and the semi-transparent semi-reflecting lens are located at the same side of the film to be measured；
4th total reflection mirror, it is anti-to the third total reflection mirror or the 5th total reflection mirror for receiving laser
It penetrates；
The third total reflection mirror, it is vertical to the film to be measured and the semi-transparent semi-reflecting lens for receiving simultaneously reflection laser
Straight outgoing, or receive laser and reflected to the 4th total reflection mirror；
Received fraction of laser light is transmitted to described image for receiving the laser of vertical incidence by the half elegant semi-reflective mirror
Receiver forms first light beam, while received fraction of laser light being reflected and to pass through the film to be measured complete to the third
Reflecting mirror, the 4th total reflection mirror and the 5th total reflection mirror are incident, are all-trans to the third total reflection mirror, the described 4th
It transmits to form second light beam to described image receiver after penetrating mirror and the 5th total reflection mirror reflection.
In one possible implementation, described to set in above-mentioned film thickness detecting device provided in an embodiment of the present invention
Clamp angle is 45 degree.
In one possible implementation, described to swash in above-mentioned film thickness detecting device provided in an embodiment of the present invention
Radiant shoot laser is infrared laser or Submillineter Wave Technology.
In one possible implementation, in above-mentioned film thickness detecting device provided in an embodiment of the present invention, the figure
As receiver is photodetector, spectrometer or CCD.
The present invention has the beneficial effect that:
Film thickness detecting device provided in an embodiment of the present invention, comprising: laser light source, optics microscope group, picture receiver；Its
In, optics microscope group generates the first light beam and penetrates the of film to be measured at least twice for receiving the laser of laser light source outgoing
Two light beams interfere the first light beam with the second light beam；Picture receiver, for receiving interference light and determining interference information,
The thickness of film is determined according to interference information.Film thickness detecting device provided in an embodiment of the present invention is repeatedly penetrated to be measured using laser
Laser interference information after film measures the thickness of film, and the change in optical path length of light can perceive small refractive index and distance
Variation, thus by change in optical path length determine the sensitivity of film thickness compared with the prior art in the way of improve a lot.
Detailed description of the invention
Fig. 1 is one of the structural schematic diagram of film thickness detecting device provided in an embodiment of the present invention；
Fig. 2 is the second structural representation of film thickness detecting device provided in an embodiment of the present invention；
Fig. 3 is the third structural representation of film thickness detecting device provided in an embodiment of the present invention；
Fig. 4 is the four of the structural schematic diagram of film thickness detecting device provided in an embodiment of the present invention；
Fig. 5 is the five of the structural schematic diagram of film thickness detecting device provided in an embodiment of the present invention.
Specific embodiment
Aiming at the problems existing in the prior art, the embodiment of the invention provides a kind of film thickness detecting devices, for improving
Detection sensitivity.
To make the above purposes, features and advantages of the invention more obvious and understandable, below in conjunction with attached drawing and implementation
The present invention will be further described for example.However, example embodiment can be implemented in a variety of forms, and it is not understood as limited to
Embodiment set forth herein；On the contrary, these embodiments are provided so that the present invention more comprehensively and completely, and by example embodiment party
The design of formula is comprehensively communicated to those skilled in the art.Identical appended drawing reference indicates same or similar knot in figure
Structure, thus repetition thereof will be omitted.The word of expression position and direction described in the present invention, is to be with attached drawing
The explanation that example carries out, but can also make a change as needed, done change is all contained in the scope of the present invention.The present invention
Attached drawing be only used for signal relative positional relationship do not represent actual proportions.
It should be noted that elaborating detail in the following description to fully understand the present invention.But this hair
Bright to be different from other way described herein with a variety of and be implemented, those skilled in the art can be without prejudice in the present invention
Similar popularization is done in the case where culvert.Therefore the present invention is not limited by following public specific embodiment.Specification is subsequent to be retouched
It states to implement the better embodiment of the application, so the description is not being used for the purpose of the rule for illustrating the application
To limit scope of the present application.The protection scope of the application is as defined by the appended claims.
With reference to the accompanying drawing, film thickness detecting device provided in an embodiment of the present invention is specifically described.
As shown in Figure 1, film thickness detecting device provided in an embodiment of the present invention, comprising: laser light source 11, optics microscope group 12 with
And picture receiver 13；
Wherein, optics microscope group 12 generates the first light beam a1 and at least twice for receiving the laser of the outgoing of laser light source 11
Through the second light beam a2 of film F to be measured, interfere the first light beam a1 with the second light beam a2；
Picture receiver 13 determines the thickness of film according to interference information for receiving interference light and determining interference information.
Above-mentioned film thickness detecting device provided in an embodiment of the present invention is to utilize two beams using the device of interferometry measurement film thickness
The thickness of the interference fringe of coherent beam (the first light beam and the second light beam) changed to determine film.Specifically, two beam phase
Any variation of dry light optical path difference can delicately lead to the movement of interference fringe very much, and change in optical path length be passed through by it is several
The variation of what path or medium refraction index causes, so passing through the movement of interference fringe in the case where known film refractive index
Variation can be with the minor alteration amount of measure geometry length (thickness of such as film).Measurement accuracy depends on the essence of measurement of optical path difference
Degree, so the height of its measurement accuracy is that any other measurement method is incomparable.
In compared with the prior art whether reflection or transmissivity measurement method, all to film surface condition to be measured
With stronger dependence, and it is very sensitive to the variation of incidence angle, the stability of measurement reflectivity and refractive index in this way is very poor, because
This cannot reach very high measurement accuracy.In addition, needing the spectrum pair using different-waveband for different types of film to be measured
It is measured, and applicability is weaker.Above-mentioned film thickness detecting device provided in an embodiment of the present invention, to environment, there is no strictly want
It asks, applicability is good, and stability is high；And structure of the detecting device is simple, easy to use, minimum measurement accuracy can reach several nanometers.
Further, in above-mentioned film thickness detecting device provided in an embodiment of the present invention, as shown in Figure 1, optics microscope group 12
It include: semi-transparent semi-reflecting lens 121 and total reflection mirror 122；And semi-transparent semi-reflecting lens 121 and total reflection mirror 122 are plane mirror.Semi-transparent half
Anti- mirror 121 and total reflection mirror 122 can reflection laser, so as to change the direction of propagation of laser, and semi-transparent semi-reflecting lens 121
, it is possible thereby to which laser is divided into beam, picture receiver 13 can be not only set to semi-transparent with transmission laser with reflection laser
The side of semi-reflective mirror can receive the light of its transmission.In conjunction with the use of total reflection mirror 122, picture receiver can be made to adopt
Collect interference fringe.Above-mentioned film thickness detecting device provided in an embodiment of the present invention can be formed only with above two optical mirror slip
Optical interference circuit comprising film thickness information to be measured, structure is simple, can according to need flexible variation, practical.And it is semi-transparent
Semi-reflective mirror is all made of planar structure, can simplify the control to optical path, convenient for the adjustment to optical path.
In addition to this it is possible to take optical path using optical elements such as Amici prisms, make the optical path difference of two beam coherent beams
There is set relationship with the thickness of film to be measured, thus can determine that the thickness of film according to the variation of interference fringe, this
Inventive embodiments are not defined above-mentioned similar situation.
Due to depending on the precision of measurement of optical path difference, interference fringe using the measurement accuracy of principle of interference measurement film thickness
As soon as every movement fringe spacing, optical path difference changes a wavelength, then when using wavelength as unit measurement of optical path difference, if light
The variable quantity of path difference is smaller, and when extracting the variable quantity of interference fringe, error is relatively large, therefore, in the specific implementation, can make
Semi-transparent semi-reflecting lens 121 and at least one total reflection mirror 122 constitute reflection cavity configuration, so that laser can be in the reflection cavity configuration
It will mostly reflect, and to make the light of reflection repeatedly through the film of measurement, the variable quantity of optical path difference be made to be multiplied, it is possible thereby to
The variable quantity for more effectively extracting interference fringe improves the accuracy of measurement.
And in practical applications, it can adjust above-mentioned semi-transparent semi-reflecting lens 121 at a distance from total reflection mirror 122, so that not formed
In the case where film, the light path reflected in cavity configuration is the integral multiple of optical maser wavelength, to swash in the state of not formed film
Light formed it is capable and experienced relate to, obtain preferable basic interference fringe.For example, optical maser wavelength is λ, then semi-transparent semi-reflecting lens and total reflection mirror institute
The light path of the wavelength laser can be k λ in the reflection cavity of composition, wherein k is the positive integer greater than 0.The process formed to film
In, the variation of interference fringe can be continuously monitored, to obtain the deposition or growth thickness of film in real time.
In a kind of enforceable mode, as shown in Figure 1, semi-transparent semi-reflecting lens 121 can include: the first semi-transparent semi-reflecting lens 1211
With the second semi-transparent semi-reflecting lens 1212.
As shown in Figure 1, the first semi-transparent semi-reflecting lens 1211, the second semi-transparent semi-reflecting lens 1212 and total reflection mirror 122 are respectively positioned on
The underface of picture receiver 13；First semi-transparent mirror 1212 and the film F to be measured partly returned is in setting angle；Second semi-transparent semi-reflecting lens
1212, total reflection mirror 122 and film F to be measured are parallel to each other.Wherein, the first semi-transparent semi-reflecting lens 1211 and the second semi-transparent semi-reflecting lens
1212 between film F to be measured and picture receiver 13, and it is semi-transparent semi-reflecting away from second that total reflection mirror 122 is located at film F to be measured
The side of mirror 1212.
Wherein, the first semi-transparent semi-reflecting lens 1211, for receiving the laser of the outgoing of laser light source 11 to the second semi-transparent semi-reflecting lens
1212 is incident；
Second semi-transparent semi-reflecting lens 1212 form the first light beam for received fraction of laser light to be reflected into picture receiver
A1, while received fraction of laser light being transmitted and passes through film F to be measured to 122 incidence of total reflection mirror, it is reflected to total reflection mirror 122
The backward transmission of picture receiver 13 forms the second light beam a2.
Specifically, in above-mentioned film thickness detecting device provided in an embodiment of the present invention, the second semi-transparent semi-reflecting lens 1212 with it is complete
Reflecting mirror 122 constitutes reflection cavity configuration.The laser of laser light source outgoing is incident on the first semi-transparent semi-reflecting lens 1211 first, and the first half
Laser part is reflected and impinges perpendicularly on the second semi-transparent semi-reflecting lens 1212 by saturating semi-reflective mirror；Second semi-transparent semi-reflecting lens 1212 will receive
Fraction of laser light reflect to form the first light beam a1, while the second semi-transparent semi-reflecting lens 1212 transmit received fraction of laser light, wear
Total reflection mirror 122 is incident on after crossing film F to be measured；Total reflection mirror 122 hands over laser reflection again, after passing through film F to be measured again
Again the second semi-transparent semi-reflecting lens 1212 are incident on；Second semi-transparent semi-reflecting lens 1212 and the first semi-transparent semi-reflecting lens 1211 are again by this portion
Shunt excitation light transmission forms the second light beam a2, the first light beam a1 and the second light beam a2 is formed after interfering at this time interference fringe with
Interference fringe when not formed film is compared to optical path difference difference 2d (n-1), wherein d is the thickness of film, and n is the refraction of film
Rate (known under normal conditions)；It is possible thereby to which the thickness of film is calculated.
Above-mentioned film thickness detecting device provided in an embodiment of the present invention, using two semi-transparent semi-reflecting lens and a total reflection microscope group
At optics microscope group, structure is simply easily assembled.First semi-transparent semi-reflecting lens 1211 for changing 11 shoot laser of laser light source propagation
Direction, after laser light source is fixed, the rotation angle by adjusting the first semi-transparent semi-reflecting lens 1211 can make laser vertically enter
It is mapped to the second semi-transparent semi-reflecting lens 1212 and film F to be measured, compared to adjustment laser light source, adjustment semi-transparent semi-reflecting lens will be convenient for behaviour
Make much, to can achieve the purpose for adjusting optical path by adjusting semi-transparent semi-reflecting lens.Second semi-transparent semi-reflecting lens 1212 and total reflection mirror
The 122 reflection cavity configurations constituted, can make laser multiple reflections in two eyeglasses, so that laser can repeatedly pass through film F to be measured,
Be conducive to improve the sensitivity and accuracy of testing result.
In another enforceable mode, as shown in Fig. 2, semi-transparent semi-reflecting lens 121 and total reflection mirror 122 are respectively positioned on image
The underface of receiver 13；Film F to be measured and total reflection mirror 122 are parallel to each other；Semi-transparent semi-reflecting lens 121 are located at picture receiver
Between 13 and film F to be measured, total reflection mirror 122 is located at the side that film F to be measured deviates from semi-transparent semi-reflecting lens 121.
Wherein, received fraction of laser light is transmitted to image for receiving the laser of vertical incidence by semi-transparent semi-reflecting lens 121
Receiver 13 forms the first light beam a1, while received fraction of laser light being reflected and passes through film F to be measured to enter to total reflection mirror 122
It penetrates, is transmitted after the reflection of total reflection mirror 122 to picture receiver 13 and form the second light beam a2.
Specifically, in above-mentioned film thickness detecting device provided in an embodiment of the present invention, semi-transparent semi-reflecting lens 121 and total reflection mirror
122 constitute above-mentioned reflection cavity configuration.Laser light source 11 and total reflection mirror 122 are arranged in the same side, the outgoing of laser light source 11
Laser passes perpendicularly through film and is again incident on semi-transparent semi-reflecting lens 121；Semi-transparent semi-reflecting lens 121 transmit the fraction of laser light received to figure
Picture receiver 13 is reflected fraction of laser light with forming the first light beam a1, and laser passes through film and is incident on total reflection mirror 122；
Total reflection mirror 122 reflects laser again, and it is incident to semi-transparent semi-reflecting lens 121 to again pass through film；Semi-transparent semi-reflecting lens 121 by this
Fraction of laser light transmits to form the second light beam a2, the interference fringe that the first light beam a1 and the second light beam a2 is formed after interfering at this time
Optical path difference difference 2d (n-1) compared with interference fringe when not formed film, wherein d is the thickness of film, and n is the folding of film
Penetrate rate (known under normal conditions)；It is possible thereby to which the thickness of film is calculated.
Above-mentioned film thickness detecting device provided in an embodiment of the present invention, only with a semi-transparent semi-reflecting lens and a total reflection mirror
Optics microscope group is formed, structure is the simplest.It only needs that two eyeglasses and film to be measured is made to be parallel to each other during installation.Semi-transparent half
The reflection cavity configuration that anti-mirror 121 is constituted with total reflection mirror 122, can make laser multiple reflections in two eyeglasses, so that laser can be with
Film F to be measured is repeatedly passed through, the sensitivity and accuracy that improve testing result are conducive to.
In another enforceable mode, as shown in figure 3, total reflection mirror can include: the first total reflection mirror 1221 and the
Two total reflection mirrors 1222.
As shown in figure 3, semi-transparent semi-reflecting lens 121 and the first total reflection mirror 1221 are located at the underface of picture receiver 13；Half
Saturating semi-reflective mirror 121 is parallel to each other with film F to be measured；Semi-transparent semi-reflecting lens 121 between picture receiver 13 and film F to be measured,
First total reflection mirror 1221, the second total reflection mirror 1222 are respectively positioned on the side that film F to be measured deviates from semi-transparent semi-reflecting lens 121；First
Total reflection mirror 1221 and the second total reflection mirror 1222 are with film F to be measured in setting angle.
Wherein, the first total reflection mirror 1221, for receive and reflection laser light source 11 be emitted laser to film F to be measured with
And 121 vertical exit of semi-transparent semi-reflecting lens；
Received fraction of laser light is transmitted to picture receiver for receiving the laser of vertical incidence by semi-transparent semi-reflecting lens 121
13 form the first light beam a1, at the same received fraction of laser light is reflected and pass through film F to be measured to the first total reflection mirror 1221 and
Second total reflection mirror 1222 is incident, to picture receiver 13 after the first total reflection mirror 1221 and the reflection of the second total reflection mirror 1222
Transmission forms the second light beam a2.
Specifically, in the above-mentioned film thickness detecting device that this hair has embodiment to provide, semi-transparent semi-reflecting lens 121, first are totally reflected
Mirror 1221 and the second total reflection mirror 1222 constitute above-mentioned reflection cavity configuration.As shown in figure 3, laser light source 11 and the second total reflection
Mirror 1222 is located at the same side, on the laser light incident to the first total reflection mirror 1221 that laser light source 11 is emitted；First total reflection mirror
1221 by laser reflection and pass perpendicularly through film F to be measured, impinge perpendicularly on semi-transparent semi-reflecting lens 121；It is semi-transparent semi-reflecting to be received 121
The transmission of fraction of laser light picture receiver 13 to form the first light beam a1, while fraction of laser light reflection being passed through again to be measured thin
Film F is incident on the first total reflection mirror 1221；The laser reflection of return is returned the second total reflection mirror again by the first total reflection mirror 1221
1222；Received laser is reflected back the first total reflection mirror 1221 again according to former road by the second total reflection mirror 1222, and via
The secondary reflection again of one total reflection mirror 1221 makes this fraction of laser light again pass through film F to be measured incident to semi-transparent semi-reflecting lens 121；Half
Saturating semi-reflective mirror 121, which transmits laser to picture receiver 13, forms the second light beam a2, at this time the first light beam a1 and the second light beam a2
Optical path difference difference 2d (n-1) compared with interference fringe of the interference fringe formed after interfering when not formed film, wherein d
For the thickness of film, n is the refractive index (known under normal conditions) of film；It is possible thereby to which the thickness of film is calculated.
Above-mentioned film thickness detecting device provided in an embodiment of the present invention, using a semi-transparent semi-reflecting lens and two total reflection microscope groups
It at optics microscope group, and fixes laser light source simultaneously with the second total reflection mirror, can be connect in this way to avoid laser light source direct projection image
Device is received, damage of the high intensity laser beam to picture receiver is avoided.Semi-transparent semi-reflecting lens 121 and the first total reflection mirror 1221 and second are complete
The reflection cavity configuration that reflecting mirror 1222 is constituted, the first total reflection mirror 1222 play the role of adjusting the light direction of propagation.Specific
In application, preferably, the angle of the second total reflection mirror 1222 of adjustment enters the light of the first total reflection mirror 1221 vertically
It is mapped on the second total reflection mirror 1222, such laser can be reflected back being incident on the second total reflection mirror Shi Yuanlu.Laser is half
Multiple reflections between saturating semi-reflective mirror and total reflection mirror are conducive to improve detection knot so that laser can repeatedly pass through film F to be measured
The sensitivity and accuracy of fruit.
In another enforceable mode, as shown in Figure 4 and Figure 5, total reflection mirror 122 includes: third total reflection mirror
1223, the 4th total reflection mirror 1224 and the 5th total reflection mirror 1225.
Semi-transparent semi-reflecting lens 121 and third total reflection mirror 1223 are located at the underface of picture receiver 13；Semi-transparent semi-reflecting lens
121, the 5th total reflection mirror 1225 is parallel to each other with film F to be measured；Third total reflection mirror 1223 and the 4th total reflection mirror 1224 are
With film F to be measured in setting angle；Semi-transparent semi-reflecting lens 121 are between picture receiver 13 and film F to be measured.
Further, as shown in figure 4, third total reflection mirror 1223, the 4th total reflection mirror 1224 and the 5th total reflection mirror
1225 are respectively positioned on the side that film F to be measured deviates from semi-transparent semi-reflecting lens 121；
Alternatively, as shown in figure 5, third total reflection mirror 1223, the 4th total reflection mirror 1224 are located at film F to be measured away from semi-transparent
The side of semi-reflective mirror 121, the 5th total reflection mirror 1225 are located at the same side of film F to be measured with semi-transparent semi-reflecting lens 121.
Wherein, the 4th total reflection mirror 1224, for receiving laser to third total reflection mirror 1223 or the 5th total reflection mirror
1225 reflections；
Third total reflection mirror 1223, it is vertical out to film F to be measured and semi-transparent semi-reflecting lens 121 for receiving simultaneously reflection laser
It penetrates, or receives laser and reflected to the 4th total reflection mirror 1224；
Received fraction of laser light is transmitted to picture receiver for receiving the laser of vertical incidence by half elegant semi-reflective mirror 121
13 form the first light beam a1, while received fraction of laser light being reflected and passes through film F to be measured to third total reflection mirror 1223, the
Four total reflection mirrors 1224 and the 5th total reflection mirror 1225 are incident, to third total reflection mirror 1223, the 4th total reflection mirror 1224 and the
It is transmitted after the reflection of five total reflection mirrors 1225 to picture receiver 13 and forms the second light beam a2.
Specifically, as shown in Figure 4 and Figure 5, semi-transparent semi-reflecting in above-mentioned film thickness detecting device provided in an embodiment of the present invention
Mirror 121, third total reflection mirror 1223, the 4th total reflection mirror 1224 and the 5th total reflection mirror 1225 constitute above-mentioned reflection cavity knot
Structure.
In the structure shown in figure 4, laser light source 11 and the 5th total reflection mirror 1225 are located at the same side, are located to be measured thin
Film F deviates from the side of semi-transparent semi-reflecting lens 121.On the laser light incident to the 4th total reflection mirror 1224 that laser light source 11 is emitted；4th
Total reflection mirror 1224 reflects the laser light to third total reflection mirror 1223；Third total reflection mirror 1223 is by laser reflection and passes perpendicularly through
Film F to be measured impinges perpendicularly on semi-transparent semi-reflecting lens 121；It is semi-transparent semi-reflecting by 121 that received fraction of laser light picture receiver 13 is saturating
It penetrates to form the first light beam a1, while fraction of laser light reflection is passed through into film F to be measured again and is incident on third total reflection mirror
1223；The laser reflection of return is returned the 4th total reflection mirror 1224 again by third total reflection mirror 1223；4th total reflection mirror 1224 will
Laser reflection gives the 5th total reflection mirror 1225；Received laser is reflected back the 4th again according to former road by the 5th total reflection mirror 1225
Total reflection mirror 1224 is reflected to third total reflection mirror 1223 via the 4th total reflection mirror 1224；Third total reflection mirror 1223 is again
By laser reflection, make this fraction of laser light that will again pass through film F to be measured incident to semi-transparent semi-reflecting lens 121；Semi-transparent semi-reflecting lens 121 will
Laser transmits to picture receiver 13 and forms the second light beam a2, and the first light beam a1 and the second light beam a2 is formed after interfering at this time
Interference fringe of interference fringe when not formed film compared with optical path difference difference 2d (n-1), wherein d is the thickness of film, n
For the refractive index (known under normal conditions) of film；It is possible thereby to which the thickness of film is calculated.
In the conventional configuration as shown in figure 5, laser light source 11 and the 5th total reflection mirror 1225 are located at the same side, and semi-transparent semi-reflecting
Mirror 121 is located at the same side to side film.The laser that laser light source 11 is emitted, which passes perpendicularly through film F to be measured and is incident on the 4th, to be all-trans
It penetrates on mirror 1224；4th total reflection mirror 1224 reflects the laser light to third total reflection mirror 1223；Third total reflection mirror 1223 will swash
Light reflects and passes perpendicularly through film F to be measured, impinges perpendicularly on semi-transparent semi-reflecting lens 121；It is semi-transparent semi-reflecting to swash received part for 121
Fraction of laser light reflection is passed through film F incidence to be measured to form the first light beam a1 by the transmission of light image receiver 13 again
To third total reflection mirror 1223；The laser reflection of return is returned the 4th total reflection mirror 1224 again by third total reflection mirror 1223；4th
Total reflection mirror 1224 is by laser reflection and passes perpendicularly through film F to be measured to the 5th total reflection mirror 1225；5th total reflection mirror 1225
Received laser is reflected again according to former road and vertically wears film F to be measured again to the 4th total reflection mirror 1224, via
Four total reflection mirrors 1224 are reflected to third total reflection mirror 1223；Third total reflection mirror 1223 makes this part again by laser reflection
It is incident to semi-transparent semi-reflecting lens 121 that laser will again pass through film F to be measured；Semi-transparent semi-reflecting lens 121 are by laser to picture receiver 13
Transmission formed the second light beam a2, the interference fringe that the first light beam a1 and the second light beam a2 is formed after interfering at this time with it is not formed
Interference fringe when film is compared to optical path difference difference 4d (n-1), wherein d is the thickness of film, and n is that the refractive index of film is (usual
In the case of it is known)；It is possible thereby to which the thickness of film is calculated.
Above-mentioned film thickness detecting device provided in an embodiment of the present invention, using a semi-transparent semi-reflecting lens and three total reflection microscope groups
At optics microscope group, more flexibly adjustment can be carried out to optical path.Position by adjusting the 5th total reflection mirror 1225 can be controlled
Light processed passes through the number of film to be measured, and for example, by using structure as shown in Figure 4 compared to structure shown in fig. 5, laser is passed through
The number of film to be measured is less；And in order to further increase the accuracy of detection, structure as shown in Figure 5 can choose, so that
Laser repeatedly penetrates film to be measured.It in practical applications, can be according to demand using any one of the above film thickness detecting device
Structure.
In the specific implementation, in the film thickness detecting device that the various embodiments described above of the present invention provide, film F to be measured generally may be used
Be formed on transparent substrate, in order to simplify optical path, can make semi-transparent semi-reflecting lens and/or total reflection mirror relative to film to be measured
The inclined setting angle of (transparent substrate) is set as 45 degree, the light in entire optical path can so be only parallel to be measured
Film and perpendicular to two kinds of directions of film to be measured, avoids laser from leading to optical path difference through film to be measured in a manner of non-normal incidence
It is increasingly complex with the relationship of film thickness to be measured.For example, laser light source horizontal outgoing, first is semi-transparent in structure as shown in Figure 1
Semi-reflective mirror may be configured as rotating clockwise 45 degree relative to film to be measured；In structure as shown in Figure 3, laser light source horizontal goes out
Penetrate, the first total reflection mirror 1221 may be configured as rotating 45 degree counterclockwise relative to film to be measured, the second total reflection mirror 1222 with to
Film is surveyed to be mutually perpendicular to；In structure as shown in Figure 4 and Figure 5, laser vertical exit, third total reflection mirror 1223 may be configured as phase
45 degree are rotated counterclockwise for film to be measured, the 4th total reflection mirror 1224 may be configured as rotating clockwise 45 relative to film to be measured
Degree.
Further, in practical application, 11 shoot laser of laser light source can be infrared laser or Submillineter Wave Technology.Due to
It is generally insensitive to the light of infrared band to make material used by thin film transistor (TFT), material will not be made upon laser irradiation
At destruction, therefore infrared or far infrared band can be used in laser light source.And the wavelength of laser light source is measuring after determination
It will be measured using identical wavelength during film thickness.In addition to this it is possible to according to actual needs using other
The laser of wave band, it is not limited here.
In the specific implementation, in above-mentioned film thickness detecting device provided in an embodiment of the present invention, above-mentioned picture receiver can
For photodetector, spectrometer or CCD etc..Picture receiver can have image processing function, alternatively, picture receiver may be used also
To reconnect the processing equipments such as computer or processor so that after picture receiver receives image, according to interference image into
The further image procossing of row and calculating.In practical applications, picture receiver needs to carry out adjustment early period, in not formed film
When adjustment optics microscope group in the distance of each eyeglass, angle and picture receiver distance so that picture receiver can receive
Clearly interference fringe image.It, can be further according to the variable quantity or handling capacity of interference fringe after gradually forming film
Calculate the thickness of the film formed.
Film thickness detecting device provided in an embodiment of the present invention, comprising: laser light source, optics microscope group, picture receiver；Its
In, optics microscope group generates the first light beam and penetrates the of film to be measured at least twice for receiving the laser of laser light source outgoing
Two light beams interfere the first light beam with the second light beam；Picture receiver, for receiving interference light and determining interference information,
The thickness of film is determined according to interference information.Film thickness detecting device provided in an embodiment of the present invention is repeatedly penetrated to be measured using laser
Laser interference information after film measures the thickness of film, and the change in optical path length of light can perceive small refractive index and distance
Variation, thus by change in optical path length determine the sensitivity of film thickness compared with the prior art in the way of improve a lot.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (6)
1. a kind of film thickness detecting device characterized by comprising laser light source, optics microscope group and picture receiver；Wherein,
The optics microscope group, for receiving the laser of laser light source outgoing, generate the first light beam and penetrate at least twice to
The second light beam for surveying film, interferes first light beam with second light beam；
Described image receiver determines the thickness of film according to the interference information for receiving interference light and determining interference information
Degree；
The optics microscope group, comprising: semi-transparent semi-reflecting lens and total reflection mirror；
The semi-transparent semi-reflecting lens include: the first semi-transparent semi-reflecting lens and the second semi-transparent semi-reflecting lens；
First semi-transparent semi-reflecting lens, second semi-transparent semi-reflecting lens and the total reflection mirror are respectively positioned on described image receiver
Underface；First semi-transparent mirror and the film to be measured of partly returning is in setting angle；Second semi-transparent semi-reflecting lens, the total reflection
Mirror and the film to be measured are parallel to each other；
First semi-transparent semi-reflecting lens and second semi-transparent semi-reflecting lens be located at the film to be measured and described image receiver it
Between, the total reflection mirror is located at the side that the film to be measured deviates from second semi-transparent semi-reflecting lens；
First semi-transparent semi-reflecting lens, the laser for receiving the laser light source outgoing are incident to second semi-transparent semi-reflecting lens；
Second semi-transparent semi-reflecting lens form first light for received fraction of laser light to be reflected into described image receiver
Beam, while received fraction of laser light being transmitted and passes through the film to be measured to the total reflection mirror incidence, to the total reflection
It transmits to form second light beam to described image receiver after mirror reflection；
Alternatively,
The semi-transparent semi-reflecting lens and the total reflection mirror are respectively positioned on the underface of described image receiver；
The film to be measured and the total reflection mirror are parallel to each other；The semi-transparent semi-reflecting lens are located at described image receiver and institute
It states between film to be measured, the total reflection mirror is located at the side that the film to be measured deviates from the semi-transparent semi-reflecting lens；
Received fraction of laser light is transmitted to described image and received by the semi-transparent semi-reflecting lens for receiving the laser of vertical incidence
Device forms first light beam, while received fraction of laser light being reflected and passes through the film to be measured to enter to the total reflection mirror
It penetrates, transmits to form second light beam to described image receiver after total reflection mirror reflection；
Alternatively,
The total reflection mirror includes: the first total reflection mirror and the second total reflection mirror；
The semi-transparent semi-reflecting lens and first total reflection mirror are located at the underface of described image receiver；The semi-transparent semi-reflecting lens
It is parallel to each other with the film to be measured；The semi-transparent semi-reflecting lens are located between described image receiver and the film to be measured, institute
State the first total reflection mirror, second total reflection mirror is respectively positioned on the side that the film to be measured deviates from the semi-transparent semi-reflecting lens；Institute
The first total reflection mirror and second total reflection mirror are stated with the film to be measured in setting angle；
First total reflection mirror, for receiving and reflecting the laser of laser light source outgoing to the film to be measured and institute
State semi-transparent semi-reflecting lens vertical exit；
Received fraction of laser light is transmitted to described image and received by the semi-transparent semi-reflecting lens for receiving the laser of vertical incidence
Device forms first light beam, while received fraction of laser light being reflected and passes through the film to be measured to first total reflection
Mirror and second total reflection mirror are incident, to described image after first total reflection mirror and second total reflection mirror reflection
Receiver transmits to form second light beam；
Alternatively,
The total reflection mirror includes: third total reflection mirror, the 4th total reflection mirror and the 5th total reflection mirror；The semi-transparent semi-reflecting lens with
The third total reflection mirror is located at the underface of described image receiver；The semi-transparent semi-reflecting lens, the 5th total reflection mirror with
The film to be measured is parallel to each other；The third total reflection mirror and the 4th total reflection mirror are with the film to be measured in setting
Angle；The semi-transparent semi-reflecting lens are located between described image receiver and the film to be measured；
The third total reflection mirror, the 4th total reflection mirror and the 5th total reflection mirror are respectively positioned on the film back to be measured
Side from the semi-transparent semi-reflecting lens；Alternatively, the third total reflection mirror, the 4th total reflection mirror are located at the film to be measured
Away from the side of the semi-transparent semi-reflecting lens, the 5th total reflection mirror is located at the same of the film to be measured with the semi-transparent semi-reflecting lens
Side；
4th total reflection mirror is reflected for receiving laser to the third total reflection mirror or the 5th total reflection mirror；
The third total reflection mirror, for reception and reflection laser vertically goes out to the film to be measured and the semi-transparent semi-reflecting lens
It penetrates, or receives laser and reflected to the 4th total reflection mirror；
Received fraction of laser light is transmitted to described image and received by the semi-transparent semi-reflecting lens for receiving the laser of vertical incidence
Device forms first light beam, while received fraction of laser light being reflected and passes through the film to be measured and is totally reflected to the third
Mirror, the 4th total reflection mirror and the 5th total reflection mirror are incident, to the third total reflection mirror, the 4th total reflection mirror
It transmits to form second light beam to described image receiver with after the 5th total reflection mirror reflection.
2. film thickness detecting device as described in claim 1, which is characterized in that the semi-transparent semi-reflecting lens and the total reflection mirror are equal
For plane mirror.
3. film thickness detecting device as claimed in claim 2, which is characterized in that the semi-transparent semi-reflecting lens are described complete at least one
Reflecting mirror constitutes reflection cavity configuration；
Light path in the reflection cavity configuration is the integral multiple of optical maser wavelength.
4. film thickness detecting device as described in claim 1, which is characterized in that the angle that sets is 45 degree.
5. film thickness detecting device according to any one of claims 1-4, which is characterized in that the laser light source shoot laser is
Infrared laser or Submillineter Wave Technology.
6. film thickness detecting device according to any one of claims 1-4, which is characterized in that described image receiver is photoelectricity spy
Survey device, spectrometer or CCD.
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