CN107591397A - High alignment precision thin film circuit preparation method and thin film circuit on ltcc substrate - Google Patents
High alignment precision thin film circuit preparation method and thin film circuit on ltcc substrate Download PDFInfo
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- CN107591397A CN107591397A CN201710736291.4A CN201710736291A CN107591397A CN 107591397 A CN107591397 A CN 107591397A CN 201710736291 A CN201710736291 A CN 201710736291A CN 107591397 A CN107591397 A CN 107591397A
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- thin film
- ltcc substrate
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Abstract
The invention discloses high alignment precision thin film circuit preparation method and thin film circuit on a kind of ltcc substrate, passes through polishing, the surface of cleaning ltcc substrate thin film circuit to be produced；Position using the alignment mark on ltcc substrate polishing surface as basic point measurement surface plated through-hole；Multiple layer metal film is sputtered on ltcc substrate polishing surface；By in the position input thin film circuit domain of plated through-hole, the lead location being connected in thin film circuit domain with plated through-hole is finely adjusted, wire is aligned with plated through-hole；Photoetching is carried out to multiple layer metal film according to the thin film circuit domain after fine setting；Thin film circuit domain after fine setting directly inputs laser direct-writing instrument and the photoresist on multiple layer metal film is exposed, it is not necessary to makes polylith mask plate according to the actual size of ltcc substrate, has saved manufacturing cost.
Description
Technical field
The present invention relates to high alignment precision thin film circuit preparation method and thin film circuit on a kind of ltcc substrate.
Background technology
The advantages of ltcc substrate is that thermal coefficient of expansion is small, thermal conductivity is high, and weak point is that conductor uses screen printing technique,
Line width/line spacing is larger, generally 100 μm, is unfavorable for high-density wiring；Film wiring technique energy is used on ltcc substrate surface
High-density wiring is enough realized, line width/line spacing is up to 20 μm, and therefore, manufacturing thin film circuit technique on ltcc substrate can be real
Existing high-performance, high-density packages.
Include in the step of manufacture thin film circuit on ltcc substrate：Ltcc substrate is manufactured first, and substrate surface is by grinding
Multiple layer metal film is sputtered after polishing, then carries out photoetching, the step such as plating, typically photoresist is entered using mask plate during photoetching
Row exposure, the LTCC shrinkage of the circuitous pattern of mask plate according to expectation make.
It can be shunk in X, Y, Z-direction when ltcc substrate burns altogether, such as Dupont951 series materials X, the receipts of Y-direction
Shrinkage is 12.7 ± 0.3%, and the shrinkage factor of Z-direction is 15 ± 0.5%.The change of material composition, isostatic pressed condition change, altogether
The change of burning condition and the distribution of silk-screen conductor etc. can all influence the shrinkage factor of material, burn till the actual size of rear circuit with setting
Evaluation has deviation.For example, certain ltcc substrate is made using Dupont951PT materials, there are 2 plated through-holes on surface, hole center it
Between be that (shrinkage factor calculates 50.00mm according to 12.7% during circuit design, hole center during corresponding circuit fabrication apart from design load
Distance be 57.27mm).Due to the change of material, circuit design or technological parameter, ltcc substrate tests 2 gold after burning altogether
The distance in categoryization hole is 49.83mm, i.e. shrinkage factor is changed into 13%.Test another ltcc substrate find 2 plated through-holes away from
From 50.17mm is changed into, shrinkage factor is changed into 12.4%.
Because the size of ltcc substrate can change, and make the mask plate patterns size used during thin film circuit once
It is determined that just immobilize, when substrate size changes greatly, it is larger that the position of plated through-hole also offsets from design attitude, on mask plate
Some wires being connected originally with plated through-hole breaking phenomena will occur.In order to avoid breaking phenomena occurs, typically in gold
The larger undertaking pad of design size on categoryization hole, to ensure that the wire of thin film circuit can be connected with plated through-hole.It is but big
The undertaking pad of size reduces wiring density, loses the meaning of manufacture thin film circuit.
Therefore, improve alignment precision when thin film circuit is made on ltcc substrate and realize that high-density packages must solve
Problem.
The content of the invention
The present invention is in order to solve the above problems, it is proposed that high alignment precision thin film circuit preparation method on a kind of ltcc substrate
And thin film circuit, the present invention can improve the alignment precision of thin film circuit and plated through-hole on ltcc substrate, realize ltcc substrate
Upper high alignment precision thin film circuit makes.
To achieve these goals, the present invention adopts the following technical scheme that：
High alignment precision thin film circuit preparation method, comprises the following steps on a kind of ltcc substrate：
(1) polishing, the surface of cleaning ltcc substrate thin film circuit to be produced；
(2) position using the alignment mark on ltcc substrate polishing surface as basic point measurement surface plated through-hole；
(3) multiple layer metal film is sputtered on ltcc substrate polishing surface；
(4) position of plated through-hole is inputted in thin film circuit domain, to being connected in thin film circuit domain with plated through-hole
Lead location be finely adjusted, wire is aligned with plated through-hole；
(5) photoetching is carried out to multiple layer metal film according to the thin film circuit domain after fine setting.
In the step (1), ltcc substrate is ground using corundum powder, then using the smaller cerium oxide of particle diameter
Micro mist is polished to the ltcc substrate after grinding, and the roughness on ltcc substrate surface is less than 20nm after polishing.
In the step (1), alcohol washes ltcc substrate is used.
In the step (2), the position of image measurer measurement surface plated through-hole is used.
In the step (2), alignment mark is hole or printed pattern.
In the step (2), alignment mark is several index apertures for being arranged on ltcc substrate edge.
In the step (3), multiple layer metal film is TiW-Au metallization structures, and the thickness of TiW layers is less than the thickness of Au layers
Degree.
The photoresist on multiple layer metal film is exposed using laser direct-writing instrument in the step (5), during photoetching.
In the step (5), the Ultra-Violet Laser operation wavelength of laser direct-writing instrument is 400-410nm.
High alignment precision thin film circuit, is prepared by the above method on a kind of ltcc substrate.
Compared with prior art, beneficial effects of the present invention are：
(1) present invention measures the position in each ltcc substrate surface metalation hole and inputted in thin film circuit domain, micro-
The position with the thin film circuit wire of plated through-hole interconnection is adjusted, thin film circuit wire is improved with plated through-hole alignment precision, no
Need to make large-sized undertaking pad on plated through-hole, the wiring density of circuit can be improved；
(2) the thin film circuit domain after finely tuning directly inputs laser direct-writing instrument and the photoresist on multiple layer metal film is carried out
Exposure, it is not necessary to polylith mask plate is made according to the actual size of ltcc substrate, has saved manufacturing cost.
Brief description of the drawings
The Figure of description for forming the part of the application is used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its illustrate be used for explain the application, do not form the improper restriction to the application.
Fig. 1 is schematic diagram before and after the ltcc substrate surface film the regulation of electrical circuit for the present invention；
Wherein, 1-LTCC substrates；2- alignment marks；3- plated through-holes 1；4- plated through-holes 2 (design attitude)；5- metallizes
Hole 2 (physical location)；6- thin film circuits (design attitude)；7- thin film circuits (after fine setting).
Embodiment：
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
It is noted that described further below is all exemplary, it is intended to provides further instruction to the application.It is unless another
Indicate, all technologies used herein and scientific terminology are with usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
It is also intended to include plural form, additionally, it should be understood that, when in this manual using term "comprising" and/or " bag
Include " when, it indicates existing characteristics, step, operation, device, component and/or combinations thereof.
In the present invention, term as " on ", " under ", "left", "right", "front", "rear", " vertical ", " level ", " side ",
The orientation or position relationship of instructions such as " bottoms " are based on orientation shown in the drawings or position relationship, only to facilitate describing this hair
Bright each part or component structure relation and the relative determined, not refer in particular to either component or element in the present invention, it is impossible to understand
For limitation of the present invention.
In the present invention, term such as " affixed ", " connected ", " connection " should be interpreted broadly, and expression can be fixedly connected,
Can also be integrally connected or be detachably connected；Can be joined directly together, can also be indirectly connected by intermediary.For
The related scientific research of this area or technical staff, the concrete meaning of above-mentioned term in the present invention can be determined as the case may be,
It is not considered as limiting the invention.
As background technology is introduced, exist in the prior art because shrinkage factor fluctuates after ltcc substrate burns altogether, surface
The position of plated through-hole is also with change, and mask plate patterns and the plated through-hole on ltcc substrate are difficult when causing to make thin film circuit
With the deficiency of alignment, in order to solve technical problem as above, present applicant proposes high alignment precision film on a kind of ltcc substrate
Circuit fabrication method.
In a kind of typical embodiment of the application, as shown in figure 1, the step of this method includes：
A, the surface of 1 thin film circuit to be produced of ltcc substrate is subjected to polishing, cleaning,
Ltcc substrate 1 is ground first by the corundum powder that particle diameter is 14 μm in the present embodiment, improves substrate table
Surface evenness, then the ltcc substrate 1 after grinding is polished using the cerium oxide micro mist that particle diameter is 0.75 μm, after polishing
The roughness on the surface of ltcc substrate 1 is less than 20nm, thin film circuit making is adapted for, finally using alcohol washes LTCC bases
Plate 1.
B, it is basic point measurement surface plated through-hole 3 and plated through-hole 5 with the alignment mark 2 on the polishing surface of ltcc substrate 1
Position,
Using image measurer test alignment mark point 2 and the relative position of plated through-hole 3 and plated through-hole 5, and with painting
Figure software autoCAD draws alignment mark point 2 and plated through-hole 3, plated through-hole 5.
Image measurer has higher measurement accuracy, such as the survey of certain model image measurer in larger measurement range
Amount scope is 200mm × 200mm, and the measurement accuracy in X, Y plane is (2.2+L/200) μm, and wherein L represents measurement length, with
Millimeter is unit.
C, multiple layer metal film is sputtered on the polishing surface of ltcc substrate 1,
Multiple layer metal film is TiW/Au in the present embodiment, and the thickness of TiW layers is 50nm, and the thickness of Au layers is 200nm.
D, by the position of plated through-hole 3, plated through-hole 5 input thin film circuit domain, in thin film circuit domain with gold
The lead location 6 of categoryization hole connection is finely adjusted, and is adjusted to position 7, wire is aligned with plated through-hole,
E, photoetching is carried out to multiple layer metal film according to the thin film circuit domain after fine setting.
Ultra-Violet Laser direct writing instrument in the present embodiment by the thin film circuit domain input service wavelength after fine setting for 405nm,
The photoresist of TiW/Au layer surfaces is exposed.Alignment precision of the laser direct-writing instrument in the range of 100mm × 100mm is 0.5 μ
m。
On the ltcc substrate in the range of 50mm × 50mm, the precision of image measurer measurement plated through-hole position is 2.45
μm, the alignment precision of laser direct-writing instrument is 0.5 μm, and the alignment precision that can extrapolate thin film circuit and plated through-hole is 2.95 μm.
And use conventional method in the range of 50mm × 50mm the alignment precision of thin film circuit and plated through-hole for 170 μm.
The preferred embodiment of the application is the foregoing is only, is not limited to the application, for the skill of this area
For art personnel, the application can have various modifications and variations.It is all within spirit herein and principle, made any repair
Change, equivalent substitution, improvement etc., should be included within the protection domain of the application.
Although above-mentioned the embodiment of the present invention is described with reference to accompanying drawing, model not is protected to the present invention
The limitation enclosed, one of ordinary skill in the art should be understood that on the basis of technical scheme those skilled in the art are not
Need to pay various modifications or deformation that creative work can make still within protection scope of the present invention.
Claims (10)
1. high alignment precision thin film circuit preparation method on a kind of ltcc substrate, it is characterized in that：Comprise the following steps：
(1) polishing, the surface of cleaning ltcc substrate thin film circuit to be produced；
(2) position using the alignment mark on ltcc substrate polishing surface as basic point measurement surface plated through-hole；
(3) multiple layer metal film is sputtered on ltcc substrate polishing surface；
(4) by the position input thin film circuit domain of plated through-hole, led to being connected in thin film circuit domain with plated through-hole
Line position is finely adjusted, and wire is aligned with plated through-hole；
(5) photoetching is carried out to multiple layer metal film according to the thin film circuit domain after fine setting.
2. high alignment precision thin film circuit preparation method on a kind of ltcc substrate as claimed in claim 1, it is characterized in that：It is described
In step (1), ltcc substrate is ground using corundum powder, then using the smaller cerium oxide micro mist of particle diameter to grinding after
Ltcc substrate be polished, the roughness on ltcc substrate surface is less than 20nm after polishing.
3. high alignment precision thin film circuit preparation method on a kind of ltcc substrate as claimed in claim 1, it is characterized in that：It is described
In step (1), alcohol washes ltcc substrate is used.
4. high alignment precision thin film circuit preparation method on a kind of ltcc substrate as claimed in claim 1, it is characterized in that：It is described
In step (2), the position of image measurer measurement surface plated through-hole is used.
5. high alignment precision thin film circuit preparation method on a kind of ltcc substrate as claimed in claim 1, it is characterized in that：It is described
In step (2), alignment mark is hole or printed pattern.
6. high alignment precision thin film circuit preparation method on a kind of ltcc substrate as claimed in claim 1, it is characterized in that：It is described
In step (2), alignment mark is several index apertures for being arranged on ltcc substrate edge.
7. high alignment precision thin film circuit preparation method on a kind of ltcc substrate as claimed in claim 1, it is characterized in that：It is described
In step (3), multiple layer metal film is TiW-Au metallization structures, and the thickness of TiW layers is less than the thickness of Au layers.
8. high alignment precision thin film circuit preparation method on a kind of ltcc substrate as claimed in claim 1, it is characterized in that：It is described
The photoresist on multiple layer metal film is exposed using laser direct-writing instrument in step (5), during photoetching.
9. high alignment precision thin film circuit preparation method on a kind of ltcc substrate as claimed in claim 1, it is characterized in that：It is described
In step (5), the Ultra-Violet Laser operation wavelength of laser direct-writing instrument is 400-410nm.
10. high alignment precision thin film circuit on a kind of ltcc substrate, it is characterized in that：Use such as any one of claim 1-9 institutes
The method stated is prepared.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710736291.4A CN107591397B (en) | 2017-08-24 | 2017-08-24 | High alignment precision thin film circuit production method and thin film circuit on ltcc substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710736291.4A CN107591397B (en) | 2017-08-24 | 2017-08-24 | High alignment precision thin film circuit production method and thin film circuit on ltcc substrate |
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| Publication Number | Publication Date |
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| CN107591397A true CN107591397A (en) | 2018-01-16 |
| CN107591397B CN107591397B (en) | 2019-10-15 |
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| CN201710736291.4A Active CN107591397B (en) | 2017-08-24 | 2017-08-24 | High alignment precision thin film circuit production method and thin film circuit on ltcc substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108441843A (en) * | 2018-03-13 | 2018-08-24 | 北京科技大学 | Preparation method is plated in the laser direct-writing preform photocatalysis of material surface metal pattern |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111683459B (en) * | 2020-05-22 | 2022-03-08 | 中国电子科技集团公司第二十九研究所 | Manufacturing method for high-precision fine lines on high-flat surface of LTCC substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577895A (en) * | 2003-07-16 | 2005-02-09 | 株式会社液晶先端技术开发中心 | Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate,thin-film semiconductor device, and method of manufacture |
| CN102856213A (en) * | 2012-08-24 | 2013-01-02 | 中国兵器工业集团第二一四研究所苏州研发中心 | Thin film multilayer wiring manufacturing method based on LTCC (Low Temperature Co-Fired Ceramic) base plate |
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2017
- 2017-08-24 CN CN201710736291.4A patent/CN107591397B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577895A (en) * | 2003-07-16 | 2005-02-09 | 株式会社液晶先端技术开发中心 | Thin-film semiconductor substrate, method of manufacturing thin-film semiconductor substrate,thin-film semiconductor device, and method of manufacture |
| CN102856213A (en) * | 2012-08-24 | 2013-01-02 | 中国兵器工业集团第二一四研究所苏州研发中心 | Thin film multilayer wiring manufacturing method based on LTCC (Low Temperature Co-Fired Ceramic) base plate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108441843A (en) * | 2018-03-13 | 2018-08-24 | 北京科技大学 | Preparation method is plated in the laser direct-writing preform photocatalysis of material surface metal pattern |
| CN108441843B (en) * | 2018-03-13 | 2020-02-18 | 北京科技大学 | Laser direct-writing preformed photocatalytic plating preparation method for metal patterns on surface of material |
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| Publication number | Publication date |
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| CN107591397B (en) | 2019-10-15 |
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