CN107579113A - A kind of trench-type insulated gate bipolar transistor - Google Patents
A kind of trench-type insulated gate bipolar transistor Download PDFInfo
- Publication number
- CN107579113A CN107579113A CN201710600062.XA CN201710600062A CN107579113A CN 107579113 A CN107579113 A CN 107579113A CN 201710600062 A CN201710600062 A CN 201710600062A CN 107579113 A CN107579113 A CN 107579113A
- Authority
- CN
- China
- Prior art keywords
- trench
- bipolar transistor
- insulated gate
- gate bipolar
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention provides a kind of trench-type insulated gate bipolar transistor, the cross sectional shape of p type island region structure is inverted T-shaped, positioned at false gate trench structures bottom, and inverted T-shaped both ends wrap the bottom of the groove structure, the cross sectional shape of the false gate trench structures is the Π shapes being engaged with the p type island region structure.Inverted T-shaped P islands extend to trench bottoms in technical scheme provided by the invention; trench bottoms electric field can be reduced; protect trench bottoms not breakdown; and holoe carrier can be provided for drift region, so as to increase the hole below P well, strengthen conductivity modulation effect; reduce conducting resistance; and distance P well are nearer, unnecessary holoe carrier can be swept out rapidly during shut-off, and cut-off current is smaller；T-shaped P islands are integrated, and full of whole dummy trench bottoms, can ensure that device is pressure-resistant with equilibrium electric field.
Description
Technical field
The present invention relates to a kind of novel groove grid IGBT structure, and in particular to a kind of trench-type insulated gate bipolar transistor
(IGBT)。
Background technology
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) be at present most
Representational power electronic devices.It is high with driving that IGBT is integrated with the voltage cut-out of power MOS (Metal Oxide Semiconductor) device, working frequency simultaneously
The advantages of the advantages of control circuit is simple and bipolar transistor bipolar conduction.Since IGBT technologies are born, by more than 30 years
Development, IGBT technologies experienced the change of four generations, be followed successively by first generation planar gate punch, second generation planar gate it is non-punch, the
Three generations's trench gate field cut-off type and forth generation carrier storage channel grid bipolar transistor.
Conventional trench gate IGBT short-circuit tolerance is relatively low, and its reason is that trench structures increase gully density, so as to full
Also accordingly increase with current density.Short-circuit tolerance to improve trench gate IGBT, then need suitably to reduce gully density.But
It is that, if reducing gully density by only increasing trench spacing, will make device makes pressure-resistant reduction.In order to puncture
Voltage reduces gully density on the premise of not being affected substantially, it is proposed that dummy structures.There was only wherein one in Trench both sides
Conducting channel has been divided to act on, remaining is served only for remaining pressure-resistant.Dummy structures add the relative area in PIN regions, add
The accumulation of carrier, therefore reduce further conduction voltage drop.
The trench gate IGBT of company of Infineon production largely chooses the company such as dummy trench structures, ABB, Hitachi
Trench gate IGBT groove structure is similar with dummy trench structures, and various change is proposed for dummy trench structures
Enter structure and carry out optimised devices characteristic.
However, the trench bottoms of dummy trench structures are the electric field concentration point of device, if not doing any protection,
Breakdown can first occur in trench bottoms, cause irreversible damage.In addition, dummy trench structures increase cellular size,
The area that effectively utilizes is reduced, and tail currents are larger during shut-off.
The content of the invention
The problem of tail currents are larger during in order to fill up and overcome the shut-off of above-mentioned prior art, the present invention proposes one kind
Trench-type insulated gate bipolar transistor with inverted T-shaped p type island region structure.
A kind of trench-type insulated gate bipolar transistor, the cross sectional shape of p type island region structure 7 is inverted T-shaped, positioned at false gate groove
The bottom of structure 3, and inverted T-shaped both ends wrap the bottom of the groove structure 3, the cross sectional shape of the false gate trench structures 3
For the Π shapes being engaged with the p type island region structure 7.
Further, the p type island region structure 7 is highly doped P-type semiconductor, doping concentration 1e15-1e17。
Further, the material that the highly doped P-type semiconductor uses is boron.
Further, the p type island region structure 7 is located at the N of insulated gate bipolar transistor-In drift region 1.
Further, the P of the insulated gate bipolar transistor+Colelctor electrode 6 is electric field termination structure, transparent anode structure
Or anode in short circuit structure.
Further, the semi-conducting material of the insulated gate bipolar transistor uses silicon, carborundum, GaAs or nitridation
Gallium.
Further, the trench-type insulated gate bipolar transistor also includes：Positioned at the groove-shaped insulated gate bipolar
The front metal 5 on transistor npn npn top.
Further, the trench-type insulated gate bipolar transistor also includes：Positioned at the groove-shaped insulated gate bipolar
The back side P of transistor npn npn bottom+Colelctor electrode 6.
Further, the trench-type insulated gate bipolar transistor also includes：P positioned at the false both sides of gate trench structures 3
Well region 2.
Further, the trench-type insulated gate bipolar transistor also includes：Respectively with p-well region 2, false gate trench structures
The 3 and adjacent N of front metal 5+Source electrode 4.
With immediate prior art ratio, technical scheme provided by the invention has following excellent effect：
1st, inverted T-shaped P islands extend to trench bottoms in technical scheme provided by the invention, can provide hole for drift region
Carrier, so as to increase the hole below P-well, strengthen conductivity modulation effect, reduce conducting resistance, and away from
Nearer from P-well, unnecessary holoe carrier can be swept out rapidly during shut-off, and cut-off current is smaller.
2nd, technical scheme optimization trench surrounding electric field distributions provided by the invention, reduce trench bottoms electric field, make
Trench from puncturing at first.
3rd, inverted T shaped P islands are integrated in technical scheme provided by the invention, can be with full of whole dummy trench bottoms
Equilibrium electric field, ensure that device is pressure-resistant.
Brief description of the drawings
Fig. 1 is the IGBT structure schematic diagram with inverted T-shaped P islands；
Wherein, 1 is N-Drift region, 2 be p-well (P-well) area, and 3 be false gate groove (dummy trench) structure, and 4 be N+
Source electrode, 5 be front metal, and 6 be back side P+Colelctor electrode, 7 be p type island region structure.
Embodiment
The present invention is described in further details below in conjunction with the accompanying drawings.To make the purpose of the embodiment of the present invention, technical scheme
It is clearer with advantage, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out
Clearly and completely describe, it is clear that described embodiment is part of the embodiment of the present invention, rather than whole embodiments.Base
Embodiment in the present invention, those of ordinary skill in the art obtained under the premise of creative work is not made it is all its
Its embodiment, belongs to the scope of protection of the invention.
The present invention proposes a kind of trench-type insulated gate bipolar transistor with inverted T-shaped p type island region structure, can optimize
Electric Field Distribution around trench, holoe carrier is provided while trench bottom electric fields are reduced, further reduce conducting
Pressure drop, and because the edge on P islands in trench bottoms, nearer with emitter stage, remaining holoe carrier can be with fast when off
Speed is swept out, and tail currents are smaller.
The structure of the present invention is by taking common NPT IGBT as an example, as shown in figure 1, other types IGBT is also applied for, such as PT types
With FS types IGBT.The present invention is applied to IGBT, VD-MOS constant power semiconductor devices with trench structures.
The cross sectional shape of p type island region structure 7 is inverted T-shaped, and positioned at the false bottom of gate trench structures 3, and inverted T-shaped both ends wrap
The bottom of the groove structure 3, the cross sectional shape of the false gate trench structures 3 are the Π being engaged with the p type island region structure 7
Shape.
The p type island region structure 7 is highly doped P-type semiconductor, doping concentration 1e15-1e17,Highly doped P-type semiconductor
The material used is the p-type semiconductor material such as boron.
The p type island region structure 7 is located at the N of insulated gate bipolar transistor-In drift region 1.
The P of the insulated gate bipolar transistor+Colelctor electrode 6 is that electric field termination structure, transparent anode structure or anode are short
Line structure.
The semi-conducting material of the insulated gate bipolar transistor uses silicon, carborundum, GaAs or gallium nitride.
The trench-type insulated gate bipolar transistor also includes：Positioned at the trench-type insulated gate bipolar transistor top
The front metal 5 at end, the back side P positioned at the trench-type insulated gate bipolar transistor bottom+Colelctor electrode 6 and positioned at false grid ditch
The p-well region 2 of the both sides of slot structure 3, and N adjacent with p-well region 2, false gate trench structures 3 and front metal 5 respectively+Source electrode 4.
Finally it should be noted that：The above embodiments are merely illustrative of the technical scheme of the present invention and are not intended to be limiting thereof, to the greatest extent
The present invention is described in detail with reference to above-described embodiment for pipe, those of ordinary skills in the art should understand that：Still
The embodiment of the present invention can be modified or equivalent substitution, and without departing from any of spirit and scope of the invention
Modification or equivalent substitution, it all should cover among scope of the presently claimed invention.
Claims (10)
- A kind of 1. trench-type insulated gate bipolar transistor, it is characterised in that the cross sectional shape of p type island region structure (7) is inverted T-shaped, Positioned at false gate trench structures (3) bottom, and inverted T-shaped both ends wrap the bottom of the groove structure (3), the false gate groove The cross sectional shape of structure (3) is the Π shapes being engaged with the p type island region structure (7).
- A kind of 2. trench-type insulated gate bipolar transistor as claimed in claim 1, it is characterised in that the p type island region structure (7) it is highly doped P-type semiconductor, doping concentration 1e15-1e17。
- A kind of 3. trench-type insulated gate bipolar transistor as claimed in claim 2, it is characterised in that the highly doped P The material that type semiconductor uses is boron.
- A kind of 4. trench-type insulated gate bipolar transistor as claimed in claim 2, it is characterised in that the p type island region structure (7) it is located at the N of insulated gate bipolar transistor-In drift region (1).
- A kind of 5. trench-type insulated gate bipolar transistor as claimed in claim 4, it is characterised in that the insulated gate bipolar The P of transistor npn npn+Colelctor electrode (6) is electric field termination structure, transparent anode structure or anode in short circuit structure.
- A kind of 6. trench-type insulated gate bipolar transistor as claimed in claim 1, it is characterised in that the insulated gate bipolar The semi-conducting material of transistor npn npn uses silicon, carborundum, GaAs or gallium nitride.
- A kind of 7. trench-type insulated gate bipolar transistor as claimed in claim 1, it is characterised in that the groove-shaped insulation Grid bipolar transistor also includes：Front metal (5) positioned at the trench-type insulated gate bipolar transistor top.
- A kind of 8. trench-type insulated gate bipolar transistor as claimed in claim 1, it is characterised in that the groove-shaped insulation Grid bipolar transistor also includes：Back side P positioned at the trench-type insulated gate bipolar transistor bottom+Colelctor electrode (6).
- A kind of 9. trench-type insulated gate bipolar transistor as claimed in claim 1, it is characterised in that the groove-shaped insulation Grid bipolar transistor also includes：P-well region (2) positioned at false gate trench structures (3) both sides.
- 10. a kind of trench-type insulated gate bipolar transistor as claimed in claim 1, it is characterised in that described groove-shaped exhausted Edge grid bipolar transistor also includes：The N adjacent with p-well region (2), false gate trench structures (3) and front metal (5) respectively+Source Pole (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710600062.XA CN107579113A (en) | 2017-07-21 | 2017-07-21 | A kind of trench-type insulated gate bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710600062.XA CN107579113A (en) | 2017-07-21 | 2017-07-21 | A kind of trench-type insulated gate bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107579113A true CN107579113A (en) | 2018-01-12 |
Family
ID=61049717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710600062.XA Pending CN107579113A (en) | 2017-07-21 | 2017-07-21 | A kind of trench-type insulated gate bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107579113A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040041171A1 (en) * | 2002-06-19 | 2004-03-04 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US20140061719A1 (en) * | 2012-09-06 | 2014-03-06 | Fuji Electric Co., Ltd. | Mos type semiconductor device |
| US20140077256A1 (en) * | 2012-08-21 | 2014-03-20 | Rohm Co., Ltd. | Semiconductor device |
| CN105977230A (en) * | 2015-03-11 | 2016-09-28 | 株式会社东芝 | Semiconductor device |
| US20160336393A1 (en) * | 2015-05-12 | 2016-11-17 | Magnachip Semiconductor, Ltd. | Power semiconductor device |
-
2017
- 2017-07-21 CN CN201710600062.XA patent/CN107579113A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040041171A1 (en) * | 2002-06-19 | 2004-03-04 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US20140077256A1 (en) * | 2012-08-21 | 2014-03-20 | Rohm Co., Ltd. | Semiconductor device |
| US20140061719A1 (en) * | 2012-09-06 | 2014-03-06 | Fuji Electric Co., Ltd. | Mos type semiconductor device |
| CN105977230A (en) * | 2015-03-11 | 2016-09-28 | 株式会社东芝 | Semiconductor device |
| US20160336393A1 (en) * | 2015-05-12 | 2016-11-17 | Magnachip Semiconductor, Ltd. | Power semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107799582B (en) | Trench gate charge storage type insulated gate bipolar transistor and manufacturing method thereof | |
| CN103413824B (en) | A kind of RC-LIGBT device and preparation method thereof | |
| CN102683403B (en) | Trench gate charge storage type insulated gate bipolar transistor (IGBT) | |
| US8058670B2 (en) | Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up | |
| CN102779840B (en) | Insulated gate bipolar translator (IGBT) with terminal deep energy level impurity layer | |
| CN102683402B (en) | A kind of planar gate charge storage type IGBT | |
| CN103094332B (en) | A kind of igbt | |
| US10686062B2 (en) | Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances | |
| CN103887331B (en) | VLD terminal of high pressure IGBT device and preparation method thereof | |
| CN103258847B (en) | Reverse block (RB)-insulated gate bipolar transistor (IGBT) device provided with double-faced field stop with buried layers | |
| CN108682624B (en) | Manufacturing method of IGBT chip with composite gate | |
| CN102005473B (en) | IGBT (insulated gate bipolar translator) with improved terminal | |
| CN107808899A (en) | Lateral power with hybrid conductive pattern and preparation method thereof | |
| CN109888007B (en) | SOI LIGBT device with diode clamped carrier storage layer | |
| CN112201690A (en) | MOSFET transistor | |
| CN111834449B (en) | Quick turn-off RC-IGBT device with back double MOS structure | |
| CN104319287A (en) | Trench gate type semiconductor device structure and manufacturing method thereof | |
| CN204632762U (en) | The terminal domain structure that knot terminal extends and terminal structure thereof | |
| CN110137250B (en) | High-speed IGBT device with ultralow conduction voltage drop | |
| CN110190127A (en) | A kind of silicon carbide MOSFET device with L-type masking layer structure | |
| EP3989292A1 (en) | Insulated gate bipolar transistor | |
| CN102544104A (en) | High-voltage resistant tunneling transistor and preparation method thereof | |
| CN103035674B (en) | Radio frequency horizontal dual pervasion field effect transistor and manufacture method thereof | |
| CN103531620A (en) | Insulated gate bipolar translator (IGBT) chip based on N-type injection layers and manufacturing method thereof | |
| CN107579113A (en) | A kind of trench-type insulated gate bipolar transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |