CN107564783A - Thermal field emission negative electrode and preparation method thereof and apply its vacuum electron device - Google Patents
Thermal field emission negative electrode and preparation method thereof and apply its vacuum electron device Download PDFInfo
- Publication number
- CN107564783A CN107564783A CN201710794394.6A CN201710794394A CN107564783A CN 107564783 A CN107564783 A CN 107564783A CN 201710794394 A CN201710794394 A CN 201710794394A CN 107564783 A CN107564783 A CN 107564783A
- Authority
- CN
- China
- Prior art keywords
- negative electrode
- tungsten
- field emission
- thermal field
- micro tips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 40
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 63
- 239000010937 tungsten Substances 0.000 claims abstract description 63
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 30
- 239000011733 molybdenum Substances 0.000 claims abstract description 30
- 239000011149 active material Substances 0.000 claims abstract description 28
- 239000011148 porous material Substances 0.000 claims abstract description 20
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 229910052706 scandium Inorganic materials 0.000 claims description 16
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 16
- 238000001459 lithography Methods 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 7
- 230000001681 protective effect Effects 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000005422 blasting Methods 0.000 claims description 3
- 238000004372 laser cladding Methods 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 12
- 239000011800 void material Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 17
- 150000003839 salts Chemical class 0.000 description 10
- 238000005498 polishing Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 238000007598 dipping method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005219 brazing Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 4
- 239000000292 calcium oxide Substances 0.000 description 4
- OUFGXIPMNQFUES-UHFFFAOYSA-N molybdenum ruthenium Chemical compound [Mo].[Ru] OUFGXIPMNQFUES-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 150000004645 aluminates Chemical class 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- QKYBEKAEVQPNIN-UHFFFAOYSA-N barium(2+);oxido(oxo)alumane Chemical class [Ba+2].[O-][Al]=O.[O-][Al]=O QKYBEKAEVQPNIN-UHFFFAOYSA-N 0.000 description 3
- 210000000746 body region Anatomy 0.000 description 3
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- HJGMWXTVGKLUAQ-UHFFFAOYSA-N oxygen(2-);scandium(3+) Chemical class [O-2].[O-2].[O-2].[Sc+3].[Sc+3] HJGMWXTVGKLUAQ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002386 leaching Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 101000666379 Homo sapiens Transcription factor Dp family member 3 Proteins 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 102100038129 Transcription factor Dp family member 3 Human genes 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- -1 barium aluminate salt Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000289 melt material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Abstract
Thermal field emission negative electrode and preparation method thereof and its vacuum electron device is applied, wherein thermal field emission negative electrode includes molybdenum cylinder and the spongy body of tungsten that is fixed thereon, wherein：The upper surface of spongy body of tungsten has micro tips array, has hole inside the micro tips array；Hole inside hole and micro tips array inside spongy body of tungsten forms interconnected pore；Active material is filled with interconnected pore.Due on spongy body of tungsten surface formed with micro tips array, and form the interconnected pore for the micro tips array internal void that gone directly from spongy body of tungsten, the interconnected pore is filled with active material, so as under thermal diffusion effect, the active material can reach at the top of micro tips array, to realize that the transmitting of low work function provides condition, therefore the emitting performance of the thermal field emission negative electrode of the present invention is greatly reduced compared to traditional thermal emission cathode, operating temperature and power consumption；Compared to traditional field-transmitting cathode, emission is higher, and has stronger anti-sparking ability.
Description
Technical field
The invention belongs to electron tube manufacturing field, relates more specifically to a kind of thermal field emission negative electrode and its preparation side
Method and apply its vacuum electron device.
Background technology
In electron tube manufacturing technology field, the negative electrode largely used at present is that overlay film impregnates dispenser cathode, also referred to as M
Type negative electrode.It is by melting and impregnating by active emitting material (barium aluminate salt), and porous spongy body of tungsten (negative electrode base is arrived in storage
Body) hole in, then cathode surface deposit one layer reduction electronic work function noble metal or alloy firm.The work of such negative electrode
Make temperature as 900-1150 DEG C, belong to traditional hot cathode, exist must work at high temperature, power consumption is big, can not start moment
The problems such as.As shown in figure 1, surface is the M type negative electrodes of plane or sphere state, to obtain obvious field emission effect and possess reality
Electron emissivity is, it is necessary to significantly raise the voltage between negative electrode and anode, and need to keep relatively high temperature.Namely
Say, for traditional M type negative electrodes, to obtain 10A/cm at relatively low temperature2The emissivities of current density, right and wrong
Often difficult.By taking plane M type negative electrodes as an example, when in male-female pole, anode-cathode distance is 0.1mm or so, under the conditions of 750 DEG C, in 3000V
When the current density that can reach of negative electrode be 0.8A/cm2；And to reach 10A/cm2, extrapolation voltage then need to reach tens of thousands of volts.Obviously.
Traditional plane or sphere M types negative electrode field emission effect at a lower temperature and electron emissivity are all very weak.
A kind of i.e. missile negative electrode of room temperature, also known as cold cathode or field-transmitting cathode also be present.Such negative electrode belongs to sub-micro
Meter ruler cun, be it is a kind of can working and room temperature, power attenuation it is low, without sluggish, instantaneous starting Flied emission micro tips array cold cathode.But
It is that regrettably, the preparation of this room temperature field emitter arrays is extremely strict to equipment, technique and environmental requirement, slightly not
It is careful, any point pollutant is remained between the micro- point of grid and negative electrode, may all trigger sparking existing during test and use
As directly contributing negative electrode, even entirely device moment scraps.Just because of this reason, the hair of the negative electrode and its variant in the world
Exhibition is all more slow.Existing field-transmitting cathode, the ability of its field emission electron, depend on micro- sharp shape and size institute band
The field enhancement effect come, while also relies on the grid and grid voltage being added at micro- several microns of point, field-transmitting cathode due to
At the beginning of design, the factor of heating is not accounted for, and the defects of requiring environment vacuum degree high, anti-sparking ability be present, because
This, which can not be utilized caused by heating, makes the increased benefit of emissivities.
The content of the invention
Based on problem above, it is a primary object of the present invention to propose a kind of thermal field emission negative electrode and preparation method thereof and
Using its vacuum electron device, for solving at least one of above technical problem.
To achieve these goals, as one aspect of the present invention, propose a kind of thermal field emission negative electrode, including molybdenum cylinder and
The spongy body of tungsten being fixed thereon, wherein：The upper surface of spongy body of tungsten has micro tips array, has hole inside the micro tips array
Gap；Hole inside hole and micro tips array inside spongy body of tungsten forms interconnected pore；Filled in the interconnected pore active
Material.
In some embodiments of the invention, above-mentioned active material includes active emitting material containing scandium.
In some embodiments of the invention, above-mentioned molybdenum cylinder includes：Molybdenum support tube, is fixedly connected with spongy body of tungsten；Heater,
It is placed in molybdenum support tube, the outer surface of the heater is enclosed with insulating barrier.
To achieve these goals, as another aspect of the present invention, a kind of preparation side of thermal field emission negative electrode is proposed
Method, comprise the following steps：The emitting facet of tungsten copper body is processed by shot blasting；Emitting facet of the lithography in tungsten copper body is melted with laser
Form the internal micro tips array with hole；Vacuum is carried out to the tungsten copper body for forming micro tips array and removes copper, obtains spongy body of tungsten, with
Make the porosity communication inside the hole and micro tips array inside spongy body of tungsten, obtain the spongy body of tungsten with micro tips array；Soldering
Or laser welding carries the spongy body of tungsten and molybdenum cylinder of micro tips array, cathode assembly is formed；With active material high temperature impregnated cathode group
Part, complete the preparation method of thermal field emission negative electrode.
In some embodiments of the invention, the cell size of above-mentioned tungsten copper body is 18~32%, and rate of closed hole is less than 2%, in it
The hole in portion is uniformly distributed.
In some embodiments of the invention, it is being passed through in the vacuum chamber of protective gas argon gas, lithography is melted using laser
The internal micro tips array with hole is formed in the emitting facet of tungsten copper body；Preferably, before being passed through protective gas argon gas, vacuum chamber
Interior vacuum is less than 1Pa.
In some embodiments of the invention, after active material high temperature impregnated cathode component, in addition to it is cloudy to thermal field emission
Make cleaning treatment in the surface of pole.
In some embodiments of the invention, above-mentioned laser melts the equipment that lithography uses and includes laser head and fix its two
Dimension/three-dimensional machinery arm；Laser scribing means, laser-beam welding machine, laser cutting machine or laser cladding machine can be selected in the equipment of the use.
In some embodiments of the invention, the translational speed of above-mentioned two-dimensional/three-dimensional mechanical arm and the power of laser head into
Direct ratio.
To achieve these goals, as an additional aspect of the present invention, a kind of vacuum electron device is proposed, including it is above-mentioned
The thermal field emission negative electrode that is prepared of preparation method.
Thermal field emission negative electrode proposed by the present invention and preparation method thereof and apply its vacuum electron device, have it is following
Beneficial effect：
1st, due to formed with micro tips array, and forming and being gone directly micro tips array internal holes from spongy body of tungsten on spongy body of tungsten surface
The interconnected pore of gap, the interconnected pore are filled with active material, so as to which under thermal diffusion effect, the active material can reach micro- sharp battle array
Row top, to realize that the transmitting of low work function provides condition, therefore the emitting performance of the thermal field emission negative electrode of the present invention is compared
In traditional thermal emission cathode, operating temperature and power consumption are greatly reduced；Compared to traditional field-transmitting cathode, emission
It is higher, and there is stronger anti-sparking ability；
2nd, thermal field emission negative electrode of the invention, the electronics launched below 750 DEG C, the overwhelming majority belong to Flied emission electricity
Son, therefore compared to traditional thermal emission cathode, in the absence of obvious hesitation；
3rd, thermal field emission negative electrode of the invention, using active emitting material containing scandium, can further improve emissivities, identical
Under voltage, higher emission is obtained；
4th, compared with the preparation of traditional field-transmitting cathode, preparation method of the invention does not need costly, complicated micro Process
Process equipment and harsh production environment, prepared cathode emission current density is higher, and has stronger anti-sparking ability.
Brief description of the drawings
Fig. 1 is the schematic diagram of mechanism that command current flows in conventional hot-electron diode；
Fig. 2 is the structural representation for the thermal field emission negative electrode that one embodiment of the invention proposes；
Fig. 3 is the micro tips array structural representation on thermal field emission negative electrode spongy body of tungsten surface proposed by the present invention；
Fig. 4 is the electron scanning shape appearance figure of micro tips array in Fig. 3；
Fig. 5 is the emission of a comparative example midplane M type negative electrodes of the invention and applies alive graph of relation；
Fig. 6 is that the emission current of the plane M type negative electrodes based on the active emitting material containing scandium in another comparative example of the present invention is close
Spend and apply alive graph of relation；
Fig. 7 is the emission for the thermal field emission negative electrode that one embodiment of the invention proposes and applies alive relation song
Line chart.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
In general, thermal diffusion negative electrode and field-transmitting cathode almost do not occur simultaneously between the two, but if one kind can be found
Method, prepare a kind of negative electrode to fall between, it is possible to develop a kind of new negative electrode, this negative electrode has hot cathode concurrently
And the characteristics of field-transmitting cathode.So far, still not only possess simple preparation technology without a kind of negative electrode, can also be by heat
Dispenser cathode is made efficiently to merge with the micro- sharp negative electrode of Flied emission, produces a kind of negative electrode of thermal field joint transmitting.
It is an object of the present invention to for working under hot cathode high temperature, power consumption is big, the problems such as can not starting moment, and
The field-transmitting cathode preparation technology of room temperature is complicated, the problem of easily striking sparks, and proposes a kind of thermal field emission negative electrode with micro tips array
And preparation method thereof.
As described in Figure 2, thermal field emission negative electrode proposed by the present invention, including molybdenum cylinder 1 and the spongy body of tungsten 2 that is fixed thereon,
Wherein：The upper surface of spongy body of tungsten 2 has micro tips array 21, also has hole inside the micro tips array 21；Inside spongy body of tungsten 2
Hole 22 and micro tips array 21 inside hole formation interconnected pore；Active material 23 is filled with interconnected pore.
Due to formed with micro tips array 21, and forming and being gone directly from spongy body of tungsten 2 in micro tips array 21 on the surface of spongy body of tungsten 2
The interconnected pore of portion's hole, the interconnected pore are filled with active material 23, so as to which under thermal diffusion effect, the active material 23 is reachable
At the top of to micro tips array, to realize that the transmitting of low work function provides condition, therefore the transmitting of the thermal field emission negative electrode of the present invention
Performance is greatly reduced compared to traditional thermal emission cathode, operating temperature and power consumption；Compared to traditional field-transmitting cathode, transmitting
Current density is higher, and has stronger anti-sparking ability.
In some embodiments of the invention, above-mentioned active material includes active emitting material containing scandium, such as including
45wt% barium strontiums calcium oxide, the active emitting material containing scandium of 48wt% barium aluminate salts and 7wt% scandium oxides or including 26BaO
29SrO·8Sc2O3·7CaO·Al2O3Active emitting material containing scandium.The present embodiment is not defined to active material, only
It to be the active emitting material containing scandium；So as to can further improve the emissivities of thermal field emission negative electrode, under identical voltage,
Obtain higher emission.
In some embodiments of the invention, as shown in Fig. 2 above-mentioned molybdenum cylinder 1 includes：Molybdenum support tube 11, with spongy body of tungsten 2
It is fixedly connected；Heater 12, it is placed in molybdenum support tube 11, the outer surface of the heater 12 is enclosed with insulating barrier 13.Wherein, heater 12 is used
Heated in thermal field emission negative electrode, the active material in spongy body of tungsten can reach the top of micro tips array under thermal diffusion effect
Portion, so as to provide condition to realize that low work function is launched.
The present invention also proposes a kind of preparation method of thermal field emission negative electrode, comprises the following steps：To the transmitting terminal of tungsten copper body
Face is processed by shot blasting；Lithography, which is melted, with laser forms the internal micro tips array with hole in the emitting facet of tungsten copper body；To shape
Tungsten copper body into micro tips array removes copper, obtains spongy body of tungsten, so that the hole inside the hole and micro tips array inside spongy body of tungsten
Gap connects, and obtains the spongy body of tungsten with micro tips array；Soldering or laser welding carry the spongy body of tungsten and molybdenum cylinder of micro tips array,
Form cathode assembly；Active material high temperature impregnated cathode component, complete the preparation method of thermal field emission negative electrode.
Compared with the preparation of traditional field-transmitting cathode, preparation method of the invention does not need costly, complicated micro Process
Process equipment and harsh production environment, prepared cathode emission current density is higher, and has stronger anti-sparking ability.
In some embodiments of the invention, the cell size of above-mentioned tungsten copper body is 18~32%, and rate of closed hole is less than 2%, in it
The hole in portion is uniformly distributed；Corresponding tungsten particle size is 1~10 μm, so as to ensure the thermal field emission negative electrode energy being prepared
Enough so that active material can smoothly diffuse to micro tips array top at high temperature, the emission current for improving thermal field emission negative electrode is close
Degree.
In some embodiments of the invention, it is being passed through in the vacuum chamber of protective gas argon gas, lithography is melted using laser
The internal micro tips array with hole is formed in the emitting facet of tungsten copper body；Preferably, before being passed through the protective gas argon gas, very
Vacuum in cavity is less than 1Pa.
In some embodiments of the invention, after active material high temperature impregnated cathode component, in addition to it is cloudy to thermal field emission
Cleaning treatment is made on the surface of pole, to remove the salt marsh of residual, improves the performance of thermal field emission negative electrode.
In some embodiments of the invention, above-mentioned laser melts the equipment that lithography uses and includes laser head and fix its two
Dimension/three-dimensional machinery arm；Such as laser scribing means, laser-beam welding machine, laser cutting machine or laser cladding machine can be selected.Melted in laser
Quarter is formed during micro tips array, and the translational speed of mechanical arm should adjust accordingly according to the power of laser head, is specially swashed
The power of shaven head is high, the translational speed of mechanical arm should set it is faster, to form uniform micro tips array.
The preparation method of thermal field emission negative electrode proposed by the present invention.Its principle is：Lithography is melted using laser, in thermal diffusion
Micro tips array is constructed on the surface (plane or sphere) of negative electrode blank matrix (tungsten copper body), can be when applying identical voltage
Cathode surface obtains higher electric-field intensity；Prepare and activate by thermal diffusion negative electrode, the micro tips array of cathode surface can obtain
The material (active material) of one layer of low work function, it is ensured that negative electrode obtains higher emissivities.
In some embodiments of the invention, a kind of preparation method of the thermal field emission negative electrode with micro tips array is proposed,
Specially：From the tungsten copper body with uniform pores；Its surface is processed and polished；The molten quarter polished surface of laser forms micro-
Sharp array；Copper is gone to form spongy body of tungsten as vacuum tungsten copper body；High temperature brazing spongy body of tungsten and molybdenum cylinder form brazed assembly；To pricker
Weld component dipping active emitting material；To assembly surface cleaning treatment etc., the preparation of thermal field emission negative electrode is completed.Its principal character
It is：Lithography is melted using laser, and regularly arranged micro tips array is constructed in polish tungsten copper surface；Copper skill is gone using vacuum
Art removes the copper in micro- point and tungsten copper body matrix, constructs the intercommunicating pore for micro- sharp internal void that gone directly inside tungsten sponge matrix
Gap；Active material is filled up into micro- sharp internal void and spongy body of tungsten internal void using the technology of high temperature dipping active material.
In some embodiments of the invention, the step of preparing thermal field emission negative electrode be specially：
Step 1, from cell size be 18-32%, even pore distribution tungsten copper body；Tungsten copper body is processed and polishing at
Reason.The shape and size (size that should suitably reserve polishing removal) for being machined to require by negative electrode tungsten copper body according to negative electrode drawing,
Then polishing is made to surface of emission end face.
Step 2, lithography is melted using laser regularly arranged micro tips array is constructed in polish tungsten copper surface；This step
It is the core procedure for making micro tips array.Its principle is：Laser Focusing can trigger melt material moment, turn in piece surface
The effect such as gush, sputter；When laser moves, its one side moment forms molten bath, and molten bath is rushed at both sides by another aspect moment again,
As a result it is formed the micro- point of twice that height is several microns to tens microns in the both sides of molten groove；Laser is horizontally-parallel along one group
Line moves, then longitudinally parallel line movement again, so that it may obtains various sizes of micro tips array.In order to avoid tungsten copper surface is by oxygen
Change, tungsten copper body, which should be placed in the vacuum cavity of ventable protection, carries out laser molten quarter.
Step 3, copper is gone as vacuum to the tungsten copper body with micro tips array；Specially：By the tungsten copper body with micro tips array
It is put into vacuum to go in copper stove, vacuumizes and tungsten copper body is heated, tungsten copper body region temperature is reached 1600 DEG C and is protected
Hold 1 to 3 hour, copper fusing and rapid evaporation in tungsten copper body, the copper in tungsten copper body is thoroughly removed, carried
The spongy body of tungsten of micro tips array.
Step 4, high temperature brazing is carried out to the spongy body of tungsten with micro tips array and molybdenum cylinder.Specially：By spongy body of tungsten with
Molybdenum cylinder is assembled together, and (i.e. the upper surface of molybdenum cylinder) places molybdenum ruthenium alloy high-temp solder at cooperation position, is put into high temperature hydrogen stove
Soldering is carried out, brazing temperature is 2020 ± 20 DEG C and kept for 1 to 3 minute, obtains brazed assembly.
Step 5, active emitting material is impregnated to brazed assembly.Specially：It is with active emitting material that the tungsten in component is extra large
Continuous body particularly micro tips array part is coated, and is put into high temperature hydrogen stove and is carried out high temperature dipping, obtains thermal field emission negative electrode.
Step 6, cleaning treatment is made to thermal field emission cathode surface.Wash off what cathode surface dipping left with pure water
Salt marsh, makees high temperature reduction in hydrogen stove afterwards, and specification is 1200 ± 20 DEG C and kept for 10 to 30 minutes.
Above-mentioned steps are performed, you can prepare a kind of thermal field emission negative electrode with micro tips array of the present invention.
Generally speaking, the preparation method of thermal field emission negative electrode of the invention is made up of six step processes：Prepare tungsten copper matrix simultaneously
Tungsten copper matrix surface is polished；Laser is molten to carve polished surface；Copper is gone as vacuum to the molten tungsten copper body carved；High temperature brazing tungsten sponge
Body and molybdenum cylinder；Active emitting material is impregnated to brazed assembly；Surface cleaning processing etc..
The thermal field emission negative electrode of the present invention, except tungsten copper body surface mirror polish and in addition to laser molten quarter, prepared by negative electrode uses general work
Sequence, i.e., as shown in Fig. 2 tungsten sponge matrix 2 of the surface with micro tips array 21 carries out height with molybdenum support tube 11 using molybdenum ruthenium solder
Warm soldering；Helix heater heater 12, it is positioned in molybdenum cylinder 11.
In some embodiments of the invention, in the micro tips array prepared by tungsten copper surface one direction parallel molten quarter such as
Shown in Fig. 3, wherein marginal portion is tungsten copper body (equivalent to the spongy body of tungsten 2 after copper is removed), and cycle portions are micro tips array 21；Figure
4 give the micrograph of the micro tips array 21 under 1000 times.As can be seen from Figure 3, carve by laser is molten, successfully prepare
Regularly arranged spongy body of tungsten micro tips array, this is that cathode surface realizes that high field intensity distribution creates geometric shape condition.By Fig. 4
Understand, the micro- sharp surface pore of spongy body of tungsten is uniformly distributed, part hole is located at micro- ogival, it means that, viability material can
To be stored in these holes, and micro- sharp top can be reached under thermal diffusion effect, so as to be to realize that low work function is sent out
Offer material conditions are penetrated, 24 be tungsten particle body in Fig. 4, and 25 be the space of micro tips array.
In summary, the present invention melts lithography using laser, and micro tips array is constructed on thermal diffusion cathode base surface,
Afterwards using the manufacture of thermal diffusion negative electrode and activation technology, be advantageous to the material or film of transmitting in micro- sharp Surface Creation, make these
Micro tips array possesses heat, the ability of field joint transmitting, and it is cloudy that the thermal field emission negative electrode being prepared both had possessed the micro- point of common Flied emission
The architectural feature of pole, Flied emission is had concurrently but also with the material characteristics of the low work function surface of thermal diffusion negative electrode, thus as one kind
The new negative electrode of negative electrode and thermal diffusion negative electrode feature.
The present invention thermal field emission negative electrode can be applied to all kinds of microwave electron tubes for example klystron, travelling-wave tubes, gyrotron,
All kinds of vacuum electron devices such as magnetron and electron beam, can also be used in electron microscope.
By the following examples and comparative example, to thermal field emission negative electrode proposed by the present invention and preparation method thereof and application
Its vacuum electron device is described in detail.
Comparative example 1
This comparative example prepares plane M types negative electrode using conventional method and tested.Generally, it is considered that existing thermal diffusion negative electrode
In, the planar cathode that 411 salt of leaching cover Os films has of a relatively high emission level.In order to illustrate the thermal field emission negative electrode of the present invention
Emissivities, special 411 salt of dipping of selecting cover Os membrane plane negative electrodes and are contrasted.Prepared by negative electrode and experiment is as follows：
Experiment condition：Cathode base is from the spongy body of tungsten that cell size is 24%, base diameter Φ 2.5mm；Cathode base with
Molybdenum support tube carries out high temperature brazing (2050 DEG C × 1 minute) using molybdenum ruthenium solder；Active emitting material selects BaO: CaO: Al2O3
Mol ratio is 4: 1: 1 aluminates (referred to as 411 aluminates), and negative electrode is inverted in 411 aluminates, high temperature leaching is carried out in hydrogen stove
Stain (1600 DEG C × 90 seconds), salt is set to immerse cathode base；Remove what cathode surface remained with mechanical polishing and chemical cleaning method
Salt marsh, reduction treatment in 1250 DEG C × 5 minutes is carried out to negative electrode in hydrogen stove.Emission of cathode end is processed as using numerically controlled lathe
Φ 1mm diameters；Cathode surface machining deformation layer is removed using Ions Bombardment lithographic technique, afterwards in cathode surface elder generation sputtering sedimentation
The Os films of 0.30~0.35 μ m-thick；Heater (surface deposition of aluminium oxide coatings) is loaded in molybdenum support tube；3 negative electrodes are prepared altogether.
After installation and activation, negative electrode makees pulse test in water cooling diode apparatus.Pulse test select power supply be
CT30.Cathode temperature is 750 DEG C used by heat auxiliary, and pulse test condition is 20Hz, 5 μ s, and male-female pole anode-cathode distance is set to
0.1mm.The emission for testing obtained plane M type negative electrodes is as shown in Figure 5 with applying alive graph of relation.
Comparative example 2
Plane M types negative electrode based on the active emitting material containing scandium is prepared using conventional method and tested, specifically：
Experiment condition：Using the plane spongy body of tungsten in comparative example 1, and with the high activity emissive material containing scandium
(45wt% barium strontiums calcium oxide, 48wt%411 barium aluminate salts and 7wt% scandium oxides) (refers to Application No.
201310009451.7 Chinese invention patent) replace comparative example 1 in 411 salt.Micro- point is not prepared, not overlay film.Other preparations
Process is identical with comparative example 1.3 negative electrodes are prepared altogether.
After the completion of preparation, the installation of plane M types negative electrode, activation and direct-current emission based on the active emitting material containing scandium are tested
Condition is identical with comparative example 1.Test the obtained emission of the plane M type negative electrodes based on the active emitting material containing scandium with
It is as shown in Figure 6 to apply alive graph of relation.
Embodiment 1
The present embodiment proposes a kind of thermal field emission negative electrode and preparation method thereof, and thermal field emission negative electrode is：Including molybdenum cylinder and admittedly
Due to the spongy body of tungsten of its upper surface, wherein：The upper surface of spongy body of tungsten has micro tips array；Hole inside spongy body of tungsten with
Micro tips array forms interconnected pore；Active material is filled with interconnected pore.
Preparation method is specially：
Step 1, from satisfactory tungsten copper body, it is processed and polishing.Specifically, according to negative electrode drawing
It is required that the size (typically taking 0.1-0.3mm) that reserved polishing removes, is processed to tungsten copper body；Then, tungsten copper body will be used
Make polishing in the surface for making to launch；Generally, the tungsten copper body size as molten quarter is all smaller, for ease of processing and carrying
High processing efficiency, before processing, can first by tungsten copper body emitting facet down, it is several to concentrate in together, with organic adhesion agent bonding and
Diameter of phi 25mm cylinder is set into, is then ground again on grinder and polishing, when tungsten copper surface is without obvious
Cut and when reaching mirror effect, polishing process terminates；Finally, method and acetone chemistry dissolving method are machined into cylinder
Body is dealt with, to obtain clean, smooth tungsten copper body.
Step 2, melt using laser lithography and go out regularly arranged micro tips array in the surface structure of polishing tungsten copper body.Laser
Laser scribing means can be selected in molten carve；Tungsten copper surface is oxidized when being carved in order to avoid laser is molten, should be placed in tungsten copper body when melting quarter logical
In the vacuum cavity of gas shielded, the vacuum cavity top may be provided with can pass through laser quartz window sheet, in order to laser without
Damage passes through；Specifically molten quarter process is：The vacuum cavity for being placed with polish tungsten copper piece is placed in into laser to melt in quarter machine mobile work platform；
Vavuum pump forvacuum cavity is opened, chamber vacuum degree is less than 1Pa；It is passed through a small amount of argon gas and protection is formed to tungsten copper body region；
Laser is set to melt the molten quarter program stack parameter of quarter machine, including setting is melted and carves power (10-30W), focuses on, molten quarter speed (10-
100mm/s), parallel longitudinal molten quarter spacing, horizontally-parallel molten quarter spacing (10-50 μm) etc.；It is started and carried out molten quarter program.Perform
This complete step, you can obtain the tungsten copper body that surface carries micro tips array.
Step 3, Copper treatment is gone as vacuum to the tungsten copper part with micro tips array；Specifically：By the tungsten copper with micro tips array
Body is put into vacuum and gone in copper stove, is evacuated to better than 1 × 10-3Pa, then with intermediate frequency or high-frequency heating method by where tungsten copper body
Region be heated to 1600 DEG C and keep 1 to 3 hour, now the copper in tungsten copper body by rapid melting and evaporate, the copper in tungsten copper body
Effectively removed.This step has performed, and can obtain high-purity spongy body of tungsten, and can obtain internal connection and reach micro- sharp battle array
Arrange the hole at top.
Step 4, high temperature brazing is made to the spongy body of tungsten with micro tips array and molybdenum cylinder, be specially：By spongy body of tungsten and molybdenum
Cylinder is assembled together and makes transmitting downwards, the molybdenum ruthenium powder solder that coating is modulated with glycerine at the two cooperation position；Afterwards
The component assembled is moved into high temperature hydrogen stove and carries out soldering, soldering specification is 2050 DEG C × 1~2 minute.This step has performed,
Obtain the brazed assembly with micro tips array tungsten sponge member Yu molybdenum cylinder.
Step 5, active emitting material is impregnated to brazed assembly；Specifically, with active emitting material powder, by component
Spongy body of tungsten particularly micro tips array part is coated, and is then placed in high temperature hydrogen stove and is carried out high temperature dipping；Impregnating specification is
1600~1900 DEG C, high-temperature holding time is 1~5 minute；Active material selects the active emitting material containing scandium herein；Dipping knot
Shu Hou, residual salt marsh is removed with molybdenum suede.This step has performed, and spongy body of tungsten and the internal hole of micro- point are substantially by active material institute
Fill up.
Step 6, cleaning treatment is made to cathode surface.Using pure water high pressure washing impregnated cathode surface, to remove residual
Salt marsh.Make high temperature reduction in hydrogen stove afterwards, with the water stain and hydrate remained during thorough removal cleaning negative electrode, specification is
1200 ± 20 DEG C are kept for 10 to 30 minutes.
That is, replace the plane spongy body of tungsten in comparative example 1 with the spongy body of tungsten with micro tips array, and with containing
The high activity emissive material (45wt% barium strontiums calcium oxide, 48wt%411 barium aluminate salts and 7wt% scandium oxides) of scandium (refers to Shen
Please number be 201310009451.7 Chinese invention patent) replace comparative example 1 in 411 salt, the other preparation sections of negative electrode with it is right
Ratio 2 is essentially identical, prepares 3 negative electrodes altogether.
After the completion of preparation, thermal field emission negative electrode is tested, its negative electrode installation, activation and direct-current emission test condition with
Comparative example 1 is identical.Test the emission of obtained thermal field emission negative electrode and apply alive graph of relation such as Fig. 7 institutes
Show.
To sum up describe, the test result of comparative example 1, comparative example 2 and embodiment 1 arranges to obtain as shown in table 1, from table 1 and
Fig. 5~Fig. 7 understands that negative electrode prepared by comparative example 1, is 0.8A/cm in 750 DEG C of pulsed emission current density2；It is prepared by comparative example 2
Negative electrode, be 5.2A/cm in 750 DEG C of pulsed emission current density2；The negative electrode prepared using embodiment 1, sent out in 750 DEG C of pulses
Radio current density reaches 46A/cm2.It can be clearly seen that the emissivities of the negative electrode (embodiment 1) of the present invention, are that tradition is flat
57.9 times of face M type negative electrodes, it is 8.9 times of the plane M type negative electrodes based on the active emitting material containing scandium.In a word, using the present invention
A kind of thermal field emission negative electrode with micro tips array for being obtained of method, its emissivities is compared with traditional M type negative electrode and high emission
Scandium type negative electrode is greatly improved.
The emission of cathode situation of table 1 contrasts
Therefore, thermal field emission negative electrode proposed by the present invention, its operating temperature and the more traditional thermal emission cathode of power consumption significantly drop
It is low, meanwhile, its preparation technology is more traditional, and field-transmitting cathode significantly simplifies, and emitting performance is also more more excellent than traditional field-transmitting cathode
It is different.Therefore, the present invention can be used as preparation low-power consumption, high emission, highly reliable negative electrode preferred scheme.
Particular embodiments described above, the purpose of the present invention, technical scheme and beneficial effect are carried out further in detail
Describe in detail bright, it should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., the protection of the present invention should be included in
Within the scope of.
Claims (10)
1. a kind of thermal field emission negative electrode, including molybdenum cylinder and the spongy body of tungsten that is fixed thereon, wherein：
The upper surface of the spongy body of tungsten has micro tips array, has hole inside the micro tips array；
Hole inside the spongy body of tungsten forms interconnected pore with the hole inside the micro tips array；
Active material is filled with the interconnected pore.
2. thermal field emission negative electrode according to claim 1, wherein, the active material includes active emitting material containing scandium.
3. thermal field emission negative electrode according to claim 1, wherein, the molybdenum cylinder includes：
Molybdenum support tube, it is fixedly connected with the spongy body of tungsten；
Heater, it is placed in the molybdenum support tube, the outer surface of the heater is enclosed with insulating barrier.
4. a kind of preparation method of thermal field emission negative electrode, comprises the following steps：
The emitting facet of tungsten copper body is processed by shot blasting；
Lithography is melted using laser and forms the internal micro tips array with hole in the emitting facet of the tungsten copper body；
Copper is gone to the tungsten copper body progress vacuum of the formation micro tips array, spongy body of tungsten is obtained, so that inside the spongy body of tungsten
Hole and the micro tips array inside porosity communication, obtain the spongy body of tungsten with micro tips array；
The spongy body of tungsten and molybdenum cylinder of micro tips array are carried described in soldering or laser welding, forms cathode assembly；
The cathode assembly is impregnated with active material high temperature, completes the preparation method of the thermal field emission negative electrode.
5. the preparation method of thermal field emission negative electrode according to claim 4, wherein, the cell size of the tungsten copper body for 18~
32%, rate of closed hole is less than 2%, and its internal hole is uniformly distributed.
6. the preparation method of thermal field emission negative electrode according to claim 4, wherein, it is being passed through the true of protective gas argon gas
In cavity, lithography is melted using laser and forms the internal micro tips array with hole in the emitting facet of the tungsten copper body；Preferably,
Before being passed through the protective gas argon gas, the vacuum in vacuum chamber is less than 1Pa.
7. the preparation method of thermal field emission negative electrode according to claim 4, wherein, active material high temperature impregnates the negative electrode
After component, in addition to cleaning treatment is made to the surface of the thermal field emission negative electrode.
8. the preparation method of thermal field emission negative electrode according to claim 4, wherein, the laser melts the equipment that lithography uses
Including laser head and the two-dimensional/three-dimensional mechanical arm for fixing it；Preferably, the equipment that the molten lithography of the laser uses is laser scribing
Machine, laser-beam welding machine, laser cutting machine or laser cladding machine.
9. the preparation method of thermal field emission negative electrode according to claim 8, wherein, the shifting of the two-dimensional/three-dimensional mechanical arm
Dynamic speed is directly proportional to the power of the laser head.
10. a kind of vacuum electron device, including the heat that preparation method as any one of claim 4 to 9 is prepared
Field-transmitting cathode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710794394.6A CN107564783B (en) | 2017-09-05 | 2017-09-05 | Thermal field emission cathode and preparation method thereof and the vacuum electron device for applying it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710794394.6A CN107564783B (en) | 2017-09-05 | 2017-09-05 | Thermal field emission cathode and preparation method thereof and the vacuum electron device for applying it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107564783A true CN107564783A (en) | 2018-01-09 |
| CN107564783B CN107564783B (en) | 2019-12-03 |
Family
ID=60979415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710794394.6A Active CN107564783B (en) | 2017-09-05 | 2017-09-05 | Thermal field emission cathode and preparation method thereof and the vacuum electron device for applying it |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107564783B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108766860A (en) * | 2018-06-29 | 2018-11-06 | 安徽华东光电技术研究所有限公司 | A kind of cathode of long-life cold magnetron |
| CN109979791A (en) * | 2018-12-20 | 2019-07-05 | 中国电子科技集团公司第十二研究所 | A kind of Heater-Cathode assembly and preparation method thereof |
| CN111739771A (en) * | 2020-06-30 | 2020-10-02 | 西安稀有金属材料研究院有限公司 | Scandium-containing strontium active material for heat cathode material |
| CN114203500A (en) * | 2021-11-29 | 2022-03-18 | 北京航空航天大学 | Method for producing emitter base assembly, emitter base assembly and electron gun |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1205538A (en) * | 1997-07-09 | 1999-01-20 | 松下电子工业株式会社 | Dipped cathode and its mfg. method |
| CN1949449A (en) * | 2005-10-14 | 2007-04-18 | 清华大学 | Electronic emission device |
| CN102522297A (en) * | 2011-12-26 | 2012-06-27 | 中国电子科技集团公司第十二研究所 | Porosity-controllable cathode and preparation method thereof |
| CN103050354A (en) * | 2011-10-17 | 2013-04-17 | 中国科学院电子学研究所 | Storage film-coating dipped barium-tungsten cathode and preparation method |
| CN103632902A (en) * | 2013-01-10 | 2014-03-12 | 中国科学院电子学研究所 | Preparation method for cathode active emissive material |
| CN105869967A (en) * | 2016-04-28 | 2016-08-17 | 中山大学 | Thermally-assisted field electron emission cathode structure and preparation method thereof |
-
2017
- 2017-09-05 CN CN201710794394.6A patent/CN107564783B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1205538A (en) * | 1997-07-09 | 1999-01-20 | 松下电子工业株式会社 | Dipped cathode and its mfg. method |
| CN1949449A (en) * | 2005-10-14 | 2007-04-18 | 清华大学 | Electronic emission device |
| CN103050354A (en) * | 2011-10-17 | 2013-04-17 | 中国科学院电子学研究所 | Storage film-coating dipped barium-tungsten cathode and preparation method |
| CN102522297A (en) * | 2011-12-26 | 2012-06-27 | 中国电子科技集团公司第十二研究所 | Porosity-controllable cathode and preparation method thereof |
| CN103632902A (en) * | 2013-01-10 | 2014-03-12 | 中国科学院电子学研究所 | Preparation method for cathode active emissive material |
| CN105869967A (en) * | 2016-04-28 | 2016-08-17 | 中山大学 | Thermally-assisted field electron emission cathode structure and preparation method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108766860A (en) * | 2018-06-29 | 2018-11-06 | 安徽华东光电技术研究所有限公司 | A kind of cathode of long-life cold magnetron |
| CN108766860B (en) * | 2018-06-29 | 2023-08-04 | 安徽华东光电技术研究所有限公司 | Cathode of long-life cold cathode magnetron |
| CN109979791A (en) * | 2018-12-20 | 2019-07-05 | 中国电子科技集团公司第十二研究所 | A kind of Heater-Cathode assembly and preparation method thereof |
| CN109979791B (en) * | 2018-12-20 | 2021-07-06 | 中国电子科技集团公司第十二研究所 | Cathode heater assembly and manufacturing method thereof |
| CN111739771A (en) * | 2020-06-30 | 2020-10-02 | 西安稀有金属材料研究院有限公司 | Scandium-containing strontium active material for heat cathode material |
| CN114203500A (en) * | 2021-11-29 | 2022-03-18 | 北京航空航天大学 | Method for producing emitter base assembly, emitter base assembly and electron gun |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107564783B (en) | 2019-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107564783B (en) | Thermal field emission cathode and preparation method thereof and the vacuum electron device for applying it | |
| US11306408B2 (en) | Device for microelectrodeposition through laser assisted flexible following tool electrode and deposition method using the device thereof | |
| CN103572341B (en) | The electrochemical copolymerization deposition method for preparing of laser light pipe electrode and device | |
| JP2009524523A (en) | Method and apparatus for precision processing of substrates and use thereof | |
| JP2009524920A (en) | Method for producing metal electrode pattern of solar battery cell | |
| JPS63216268A (en) | Manufacture of nickel hydroxide electrode for alkaline storage battery | |
| CN109112602A (en) | A kind of laser means improving ceramic coating and metallic matrix binding force | |
| CN103928731A (en) | TEM mode dielectric filter and manufacturing method | |
| CN110401989A (en) | The method for improving membrane electrode lead-out wire job stability in devitrified glass substrate | |
| CN107342200A (en) | A kind of preparation method of rare-earth hexboride compound field emission array | |
| JP3057073B1 (en) | Liquid metal ion source and method for producing the same | |
| CN101717919B (en) | Manufacture method of target assembly | |
| CN103632902B (en) | A kind of preparation method of cathode active emissive material | |
| CN105788996B (en) | A kind of submicron film scandium tungsten cathode and preparation method thereof | |
| US5936251A (en) | Liquid metal ion source | |
| CN112663005B (en) | Device and method for coating inner wall of polycrystalline silicon reduction furnace | |
| CN1005175B (en) | Dipping type cathode and its manufacturing process | |
| RU2459305C1 (en) | Dispenser cathode and method of its manufacturing | |
| WO2011033989A1 (en) | Electron source, method for producing electron source, and electron emission method | |
| CN208655562U (en) | A kind of hot cathode with three-dimensional structure surface | |
| CN104979150A (en) | Beryllium window sealing method | |
| JPH0992201A (en) | Impregnated type cathode and its manufacture, and arc lamp | |
| JP2003031170A (en) | Electron emitting negative electrode, and manufacturing method of the same | |
| CN111036914A (en) | Additive manufacturing method of tungsten-based diffusion cathode | |
| CN109065420A (en) | A kind of hot cathode and preparation method thereof with three-dimensional structure surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240401 Address after: 100190 No. 19 West North Fourth Ring Road, Haidian District, Beijing Patentee after: Research Institute of aerospace information innovation, Chinese Academy of Sciences Country or region after: China Address before: 100190 No. 19 West North Fourth Ring Road, Haidian District, Beijing Patentee before: Institute of Electronics, Chinese Academy of Sciences Country or region before: China |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20240417 Address after: 102600 room 206, building 1, Shuanghe Beili, Huangcun Town, Daxing District, Beijing Patentee after: Beijing Huatai guangheng Technology Co.,Ltd. Country or region after: China Address before: 100190 No. 19 West North Fourth Ring Road, Haidian District, Beijing Patentee before: Research Institute of aerospace information innovation, Chinese Academy of Sciences Country or region before: China |