CN107342200A - A kind of preparation method of rare-earth hexboride compound field emission array - Google Patents
A kind of preparation method of rare-earth hexboride compound field emission array Download PDFInfo
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- CN107342200A CN107342200A CN201710504620.2A CN201710504620A CN107342200A CN 107342200 A CN107342200 A CN 107342200A CN 201710504620 A CN201710504620 A CN 201710504620A CN 107342200 A CN107342200 A CN 107342200A
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- laser
- rare
- field emission
- emission array
- earth
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- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 26
- 150000002910 rare earth metals Chemical class 0.000 title claims abstract description 26
- 150000001875 compounds Chemical class 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 229910025794 LaB6 Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 30
- 238000000034 method Methods 0.000 abstract description 20
- 238000003754 machining Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 16
- 238000005498 polishing Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 4
- 239000010406 cathode material Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Laser Beam Processing (AREA)
Abstract
A kind of preparation method of rare-earth hexboride compound field emission array belongs to cathodic field lift-off technology field.At present, rare-earth hexboride compound field emission array prepares extremely difficult, limits its large-scale application in Flied emission field.The present invention goes out uniform pointed cone field emission array using laser micro/nano process technology in rare-earth hexboride compound Surface Machining, and the pattern of the pointed cone field emission array has very high uniformity.By the adjustment of laser micro/nano working process parameter, radius of curvature nanometer can be processed to the pointed cone field emission array of micron level, pointed cone height, interval and density are controllable, are adapted to large-scale application.
Description
Technical field
The invention belongs to field emission array micro-processing technology field, and in particular to be prepared to one kind using laser micro/nano skilled worker
The method of rare-earth hexboride compound field emission array.
Technical background
The field-transmitting cathode to be grown up according to quantum tunneling effectiveness, it is always the core in vaccum microelectronics field,
Had based on the vacuum microelectronic device manufactured by it in FPD, microwave device and nanometer electronic device etc. and widely should
With.With the continuous development of vacuum electron device, it is desirable to which cathode material must be on the premise of big emission be provided, also
Good with launch stability, anti-Ions Bombardment ability is strong, there is preferable job stability etc. under dynamic environment.At present, field
Emitting cathode material is varied, and practical application can be obtained in high current density field, also there was only the micro- point of molybdenum and silicon at present
Micro- sharp field emission array.However, the shortcomings that respective be present in both negative electrodes, as molybdenum pointed cone is vaporized in substrate, so
It is not strong with the adhesive force of substrate, and the characteristic of silicon determines that its heat endurance is poor, the reliability of transmitting is low, and emission current has
Limit.In addition, the work function of both materials is higher and anti-Ions Bombardment ability is not good enough, service life is short.Therefore, field hair is improved
Cathode performance is penetrated it is necessary to select the excellent emitter material of more physical and chemical performance.For the selection of field emitter material,
The factors such as such a material work functions, electrical conductivity, density, heat endurance, chemical stability be must account for its emitting performance
Influence, while also to consider material to the requirement in processing technology.If using work function is low, anti-Ions Bombardment ability is strong, anti-
Oxidability is strong, heat endurance is good, the easy processing micro- point of material manufacture Flied emission, it is possible to significantly extends the longevity of negative electrode
Life, improves its job stability.
In recent years, rare-earth hexboride compound REB6(RE=La, Ce, Pr, Nd, Sm, Gd, Yb) is cloudy as excellent electron emission
Pole material is by increasing attention.They have high-melting-point, high conductivity and good heat endurance, chemical stability,
Low work function and active cathode surface, therefore can theoretically turn into the first choice of Field Emission Cathode Materials.Ensure REB6
It is applied in high current Flied emission field, it is necessary to process thousands of to tens of thousands of/mm2Number density, radius of curvature hundreds of are received
Rice arrives several microns of pointed cone array.But due to REB6With stable physical and chemical performance, therefore determine using routine
Micro-processing method such as particle beams etching, electron beam exposure, chemical etching etc. are difficult to be processed the material, while it is hard crisp
Mechanical characteristic, which causes to be reached with number density, the radius of curvature of the extremely easy embrittlement of material during mechanical micro Process or processing, answers
With requiring.Although REB6Emitting performance with better than other emissive materials, but because its micro Process is extremely difficult, in actual device
Application in part is restricted.Explore new technology, new method processes the pointed cone array tool that number density is big, radius of curvature is small
There are great scientific research and practical value.In recent years, laser micro/nano process technology has following advantages：To the heat around the region of processing
Influence small.The unmanageable material of other micro Process, such as hard brittle material, materials with high melting point and heat deformable material can be processed, it is dilute
Native hexaboride is just belonging to unmanageable materials with high melting point and hard brittle material.Meanwhile laser micro/nano processing can efficiently be realized and received
Rice to several microns of accurate pointing removes, and can obtain nanoscale to the big rare-earth hexboride compound pointed cone of micron order, number density
Array pattern, meet the great demand of society.Therefore, REB is prepared using laser micro/nano process technology6Field emission array meaning weight
Greatly, innovate full.
The content of the invention
It is an object of the invention to solve problem of the prior art, and provide a kind of rare-earth hexboride compound field emission array
Preparation method.The field emitter arrays pattern of method processing provided by the present invention is uniform, and number density is big and cost is low, imitates
Rate is high, is advantageous to large-scale industrial production and application.
The present invention uses laser micro/nano process equipment (femtosecond and picosecond laser) processing to prepare, and high pattern is uniform, and quantity is close
Big rare-earth hexboride compound field emission array is spent, described rare-earth hexboride compound includes set forth below：LaB6、CeB6、PrB6、
NdB6、SmB6、GdB6、YbB6.This method facility simple to operate, efficiency high, are mainly included the following steps that：
1) step 2) is entered after rare-earth hexboride compound surface is mechanically polished；
2) laser micro/nano process equipment (femtosecond and picosecond laser) is used, the laser beam of its caused high-energy is to step
1) the rare-earth hexboride compound surface after handling carries out the removal of laser direct-writing, realizes and rare-earth hexboride compound high-speed is gone
Remove, the array density processed is 10000-100000/mm2；
3) when carrying out direct write removal to rare-earth hexboride compound using laser micro/nano process technology, specific machined parameters are：
Under the conditions of positive Jiao, laser energy density 1-100J/cm2；Laser direct-writing speed is 1-100mm/min；The equivalent pulse of laser
Number is 50-300/min；Laser direct-writing at intervals of 1-10 μm.
Compared with existing technology of preparing, the invention has the advantages that：
Rare-earth hexboride compound field emission array pattern prepared by the present invention is uniform, number density is big, the Flied emission of processing
Array area is 1.0 × 1.0mm square emitter body.
Brief description of the drawings
Fig. 1, embodiment 1-7 process the principle schematic of rare-earth hexboride compound field emission array.
The stereoscan photograph for the rare-earth hexboride compound field emission array that Fig. 2, embodiment 1 are processed.
Fig. 3, embodiment 1-7 process the field emission performance figure of rare-earth hexboride compound field emission array.
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but protection scope of the present invention is not
It is limited to following embodiments.
Embodiment
Embodiment 1
1) by block LaB6Surface is mechanically polished；
2) femtosecond laser micro-nano technology equipment is used, the laser beam of its caused high-energy is to the LaB after step polishing6
Surface carries out the removal of laser direct-writing, and the array density processed is 10000/mm2；
3) using femtosecond laser micro-nano technology technology to LaB6When carrying out direct write removal, specific machined parameters are：Positive burnt
Under the conditions of, laser energy density is about 100J/cm2；Laser direct-writing speed is 20.0mm/min；The equivalent pulse number of laser is
50/min；Laser direct-writing at intervals of 10.0 μm；
Embodiment 2
1) by block CeB6Surface is mechanically polished；
2) femtosecond laser micro-nano technology equipment is used, the laser beam of its caused high-energy is to the CeB after step polishing6
Surface carries out the removal of laser direct-writing, and the array density processed is 100000/mm2；
3) using femtosecond laser micro-nano technology technology to CeB6When carrying out direct write removal, specific machined parameters are：Positive burnt
Under the conditions of, laser energy density is about 80J/cm2；Laser direct-writing speed is 40.0mm/min；The equivalent pulse number of laser is
100/min；Laser direct-writing at intervals of 2.0 μm；
Embodiment 3
1) by block PrB6Surface is mechanically polished；
2) femtosecond laser micro-nano technology equipment is used, the laser beam of its caused high-energy is to the PrB after step polishing6
Surface carries out the removal of laser direct-writing, and the array density processed is 50000/mm2；
3) using femtosecond laser micro-nano technology technology to PrB6When carrying out direct write removal, specific machined parameters are：Positive burnt
Under the conditions of, laser energy density is about 70J/cm2；Laser direct-writing speed is 50.0mm/min；The equivalent pulse number of laser is
150/min；Laser direct-writing at intervals of 4.0 μm；
Embodiment 4
1) by block NdB6Surface is mechanically polished；
2) femtosecond laser micro-nano technology equipment is used, the laser beam of its caused high-energy is to the NdB after step polishing6
Surface carries out the removal of laser direct-writing, and the array density processed is 20000/mm2；
3) using femtosecond laser micro-nano technology technology to NdB6When carrying out direct write removal, specific machined parameters are：Positive burnt
Under the conditions of, laser energy density is about 50J/cm2；Laser direct-writing speed is 60.0mm/min；The equivalent pulse number of laser is
180/min；Laser direct-writing at intervals of 6.0 μm；
Embodiment 5
1) by block SmB6Surface is mechanically polished；
2) picosecond laser micro-nano technology equipment is used, the laser beam of its caused high-energy is to the SmB after step polishing6
Surface carries out the removal of laser direct-writing, and the array density processed is 60000/mm2；
3) using femtosecond laser micro-nano technology technology to SmB6When carrying out direct write removal, specific machined parameters are：Positive burnt
Under the conditions of, laser energy density is about 40J/cm2；Laser direct-writing speed is 70.0mm/min；The equivalent pulse number of laser is
200/min；Laser direct-writing at intervals of 3.0 μm；
Embodiment 6
1) by block GdB6Surface is mechanically polished；
2) femtosecond laser micro-nano technology equipment is used, the laser beam of its caused high-energy is to the GdB after step polishing6
Surface carries out the removal of laser direct-writing, and the array density processed is 50000/mm2；
3) using femtosecond laser micro-nano technology technology to GdB6When carrying out direct write removal, specific machined parameters are：Positive burnt
Under the conditions of, laser energy density is about 30J/cm2；Laser direct-writing speed is 80.0mm/min；The equivalent pulse number of laser is
250/min；Laser direct-writing at intervals of 1.0 μm；
Embodiment 7
1) by block YbB6Surface is mechanically polished；
2) femtosecond laser micro-nano technology equipment is used, the laser beam of its caused high-energy is to the YbB after step polishing6
Surface carries out the removal of laser direct-writing, and the array density processed is 80000/mm2；
3) using femtosecond laser micro-nano technology technology to YbB6When carrying out direct write removal, specific machined parameters are：Positive burnt
Under the conditions of, laser energy density is about 10J/cm2；Laser direct-writing speed is 100.0mm/min；The equivalent pulse number of laser is
300/min；Laser direct-writing at intervals of 1.5 μm；
The machining sketch chart of the rare-earth hexboride compound field emission array prepared in embodiment 1, as shown in figure 1, laser beam into
In sharp cone distal, adjustment machined parameters can process big density rare earth hexaboride field emission array when carrying out direct write.Fig. 2 is real
Apply the block LaB of the preparation of example 16Field emission array stereoscan photograph, array pattern is uniform, and needle point journey is cone-shaped, radius of curvature
About 2 μm.Fig. 3 is block LaB prepared by embodiment 1-76The Flied emission VA characteristic curve figure of field emission array, it can be seen that
Electric current, which rises, in substantially exponential form, shows there is field emission performance using the monocrystalline hexaboride array of this method processing.
Claims (2)
- A kind of 1. preparation method of rare-earth hexboride compound field emission array, it is characterised in that：1) step 2) is entered after rare-earth hexboride compound surface is mechanically polished；2) femtosecond or picosecond laser are used, its caused laser beam is carried out to the rare-earth hexboride compound surface after step 1) processing The removal of laser direct-writing, the array density processed are 10000-100000/mm2；Specifically machined parameters are：In just burnt condition Under, laser energy density 1-100J/cm2；Laser direct-writing speed is 1-100mm/min；The equivalent pulse number of laser is 5- 300/min；Laser direct-writing at intervals of 1-40 μm.
- 2. rare-earth hexboride compound according to claim 1, it is characterised in that described single crystal rare earth hexaboride include with It is lower listed：LaB6、CeB6、PrB6、NdB6、SmB6、GdB6Or YbB6。
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| CN201710504620.2A CN107342200B (en) | 2017-06-28 | 2017-06-28 | A kind of preparation method of rare-earth hexboride compound field emission array |
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| CN107342200B CN107342200B (en) | 2019-03-22 |
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| CN201710504620.2A Expired - Fee Related CN107342200B (en) | 2017-06-28 | 2017-06-28 | A kind of preparation method of rare-earth hexboride compound field emission array |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108933068A (en) * | 2018-07-02 | 2018-12-04 | 东南大学 | A kind of nano material field-transmitting cathode patterning preparation method |
| CN110802326A (en) * | 2019-11-19 | 2020-02-18 | 中国航空制造技术研究院 | Method for machining single pointed cone of cathode emitter through laser |
| CN110808198A (en) * | 2019-11-19 | 2020-02-18 | 中国航空制造技术研究院 | Processing method of rare earth hexaboride field emission pointed cone array |
| CN114944311A (en) * | 2022-06-02 | 2022-08-26 | 安阳工学院 | Preparation method of hexaboride nano pointed cone array |
| EP4297060A3 (en) * | 2022-06-22 | 2024-03-06 | FEI Company | Method of producing microrods for electron emitters, and associated microrods and electron emitters |
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| US20020061694A1 (en) * | 2000-11-20 | 2002-05-23 | Matsushita Electric Industrial Co., Ltd. | Cold cathode forming process and electron emission element, and applied device of the same |
| CN101604604A (en) * | 2009-07-17 | 2009-12-16 | 武汉理工大学 | The method of the little processing and preparing field emissive cathode of a kind of 157nm deep ultraviolet laser |
| US20170076901A1 (en) * | 2013-11-07 | 2017-03-16 | Gregory Hirsch | Techniques for Optimizing Nanotips Derived from Frozen Taylor Cones |
-
2017
- 2017-06-28 CN CN201710504620.2A patent/CN107342200B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020061694A1 (en) * | 2000-11-20 | 2002-05-23 | Matsushita Electric Industrial Co., Ltd. | Cold cathode forming process and electron emission element, and applied device of the same |
| CN101604604A (en) * | 2009-07-17 | 2009-12-16 | 武汉理工大学 | The method of the little processing and preparing field emissive cathode of a kind of 157nm deep ultraviolet laser |
| US20170076901A1 (en) * | 2013-11-07 | 2017-03-16 | Gregory Hirsch | Techniques for Optimizing Nanotips Derived from Frozen Taylor Cones |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108933068A (en) * | 2018-07-02 | 2018-12-04 | 东南大学 | A kind of nano material field-transmitting cathode patterning preparation method |
| CN110802326A (en) * | 2019-11-19 | 2020-02-18 | 中国航空制造技术研究院 | Method for machining single pointed cone of cathode emitter through laser |
| CN110808198A (en) * | 2019-11-19 | 2020-02-18 | 中国航空制造技术研究院 | Processing method of rare earth hexaboride field emission pointed cone array |
| CN110802326B (en) * | 2019-11-19 | 2022-03-04 | 中国航空制造技术研究院 | Method for machining single pointed cone of cathode emitter through laser |
| CN114944311A (en) * | 2022-06-02 | 2022-08-26 | 安阳工学院 | Preparation method of hexaboride nano pointed cone array |
| EP4297060A3 (en) * | 2022-06-22 | 2024-03-06 | FEI Company | Method of producing microrods for electron emitters, and associated microrods and electron emitters |
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| CN107342200B (en) | 2019-03-22 |
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Granted publication date: 20190322 |