CN107561106B - Method and device for measuring characterization parameters of streak-shaped morphology - Google Patents
Method and device for measuring characterization parameters of streak-shaped morphology Download PDFInfo
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Abstract
The application discloses a method for measuring characterization parameters of striation appearance, which is used for quantitatively measuring the severity of the striation appearance in deep hole etching and comprises the following steps: acquiring a hole section image output by an electronic scanning microscope, and identifying the center point coordinates of a hole in the hole section image; acquiring length values of n diameters passing through a central point coordinate, wherein n is an integer greater than 1; and calculating the variance of the length values of the n diameters, and taking the variance as a streak shape characterization parameter of the hole. The application also discloses a device for measuring the striation shape appearance characterization parameters.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a method and a device for measuring striation shape appearance characterization parameters.
Background
Deep hole etching processes are used in the processing of specific electrical devices, and the deep hole profiles etched in the deep hole etching processes may have Striation-like topography (formation). The expression form of the streak morphology is: referring to fig. 1, the deep hole appears as a vertical streak on a longitudinal section; referring to fig. 2, the deep hole appears as a saw-tooth shape in the hole edge in the transverse cross section. The streak-like morphology of the deep hole can cause adverse effects on the subsequent hole filling process, and affect the electrical performance of the device.
In the prior art, longitudinal sections and transverse sections of deep holes can be observed through a Scanning Electron Microscope (SEM), and the severity of striated morphology can be qualitatively characterized. However, when the streak-like morphology is small in difference, the difference degree is difficult to distinguish by manual observation. It is therefore not possible in the prior art to quantify the severity of striated topography.
Disclosure of Invention
In view of this, the present application provides a method and an apparatus for measuring characterization parameters of striated topography, so as to solve the technical problem in the prior art that the severity of the striated topography cannot be quantitatively analyzed.
In order to solve the above problems, the technical solution provided by the present application is as follows:
a method of measuring a striated topography characterization parameter, the method comprising:
acquiring a hole section image output by an electronic scanning microscope, and identifying the center point coordinates of a hole in the hole section image;
acquiring length values of n diameters passing through the central point coordinate, wherein n is an integer greater than 1;
and calculating the variance of the length values of the n diameters, and taking the variance as a streak shape appearance characterization parameter of the hole.
Optionally, the method further includes:
determining a diameter maximum value and a diameter minimum value from the length values of the n diameters;
calculating the minimum diameter value divided by the maximum diameter value as a first calculation result;
and calculating the variance multiplied by the first calculation result and then multiplied by a preset value to serve as a second calculation result, and taking the second calculation result as a streak-shaped appearance characterization parameter of the hole.
Optionally, the method further includes:
and calculating the average value of the streak-shaped morphology characterization parameters of each hole in the hole profile image, and outputting the average value as a streak-shaped morphology characterization parameter corresponding to the hole profile image.
Optionally, the identifying the center coordinates of the hole in the hole profile image includes:
extracting the boundary of the hole in the hole profile image to obtain the boundary point coordinates of the hole in the hole profile image;
and calculating the coordinates of the center point of the hole by using the coordinates of the boundary points of the hole.
Optionally, the obtaining length values of n diameters passing through the center point coordinate includes:
acquiring intersection point coordinates of the n diameters passing through the central point coordinates and the boundary;
and calculating the length values of the n diameters passing through the central point coordinate by using the intersection point coordinate of each diameter and the boundary.
A device for measuring a striated topography characterizing parameter, the device comprising:
a first acquisition unit for acquiring a hole profile image output by an electron scanning microscope;
an identifying unit for identifying coordinates of a center point of a hole in the hole profile image;
the second acquisition unit is used for acquiring length values of n diameters passing through the central point coordinate, wherein n is an integer greater than 1;
and the first calculation unit is used for calculating the variance of the length values of the n diameters, and the variance is used as a streak-shaped appearance characterization parameter of the hole.
Optionally, the apparatus further comprises:
a second calculation unit for determining a diameter maximum value and a diameter minimum value from the length values of the n diameters; calculating the minimum diameter value divided by the maximum diameter value as a first calculation result; and calculating the variance multiplied by the first calculation result and then multiplied by a preset value to serve as a second calculation result, and taking the second calculation result as a streak-shaped appearance characterization parameter of the hole.
Optionally, the apparatus further comprises:
and the third calculating unit is used for calculating the average value of the streak-shaped morphology characterization parameters of each hole in the hole profile image, and the average value is used as the output result of the streak-shaped morphology characterization parameters corresponding to the hole profile image.
Optionally, the identification unit is specifically configured to:
extracting the boundary of the hole in the hole profile image to obtain the boundary point coordinates of the hole in the hole profile image;
and calculating the coordinates of the center point of the hole by using the coordinates of the boundary points of the hole.
Optionally, the second obtaining unit is specifically configured to:
acquiring intersection point coordinates of the n diameters passing through the central point coordinates and the boundary;
and calculating the length values of the n diameters passing through the central point coordinate by using the intersection point coordinate of each diameter and the boundary.
Therefore, the embodiment of the application has the following beneficial effects:
according to the embodiment of the application, the hole profile image output by the electronic scanning microscope is obtained, the central point coordinate of the deep hole in the deep hole etching morphology in the hole profile image is identified, the length values of multiple diameters passing through the central point coordinate are further obtained, and the variance of the length values of the multiple diameters is calculated to be used as the mark morphology characterization parameter of the deep hole, so that the severity of the mark morphology of the deep hole is quantized, and the purpose of quantitatively analyzing the influence of the mark morphology on the electrical property is finally achieved.
Drawings
FIG. 1 is a schematic representation of a striated topography in longitudinal section;
FIG. 2 is a schematic illustration of a striated topography in transverse cross-section;
FIG. 3 is a flowchart of an embodiment of a method for measuring striated topography characterization parameters in an embodiment of the present application;
FIG. 4 is a schematic diagram of n diameters passing through a center point coordinate in an embodiment of the present application;
FIG. 5 is a schematic diagram of striated topography characterization parameters of different recesses in an embodiment of the present application;
FIG. 6 is a schematic view of a cross-sectional image of a hole in an embodiment of the present application;
FIG. 7 is a schematic view of another cross-sectional image of a hole in an embodiment of the present application;
FIG. 8 is a schematic view of an embodiment of a device for measuring striated topography characterization parameters in an embodiment of the present application;
fig. 9 is a schematic structural diagram of a server provided in an embodiment of the present application.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the drawings are described in detail below.
In practical application, deep hole etching can be performed on a wafer to process some electronic devices, and in the deep hole etching process, the etched deep hole profile may have a streak-like appearance. In order to solve the technical problem that the severity of the striated morphology cannot be quantitatively analyzed in the prior art, the embodiment of the application provides a method and a device for measuring a characteristic parameter of the striated morphology.
Referring to fig. 3, a flow chart of an embodiment of a method for measuring a striated topography characterization parameter provided in embodiments of the present application is shown, which may include the steps of:
step 301: and acquiring a hole section image output by the electronic scanning microscope, and identifying the center point coordinates of the hole in the hole section image.
In practice, the wafer may be placed under a scanning electron microscope and the hole profile image is output. Since the area of the wafer is larger than the field of view area of the scanning electron microscope, the hole profile image output by the scanning electron microscope is an image of a predetermined region in the wafer.
After the hole profile image is acquired, the deep hole etch profile can be fitted to identify the coordinates of the center point of the hole in the hole profile image. In practical application, the central point coordinates can be identified one by one according to the arrangement sequence of the deep holes, and the streak-like morphology characterization parameters of the holes can be calculated, or the central point coordinates can be identified and the streak-like morphology characterization parameters of each hole can be calculated simultaneously for a plurality of holes in the hole profile image. In this embodiment, a process of calculating a streak profile characterization parameter of a single hole is described as an example.
In the embodiment of the application, the streak-like morphology characterization parameters corresponding to the hole profile image can be calculated by using the streak-like morphology characterization parameters of each hole of the hole profile image to output results representing the severity of the streak-like morphology of the wafer; or a plurality of positions in the wafer can be selected to output the hole profile images respectively, the streak-like morphology characterization parameter output results corresponding to the hole profile images are calculated respectively, and the average value of the streak-like morphology characterization parameter output results is used for characterizing the severity of the streak-like morphology of the wafer. In the subsequent steps of the embodiment of the present application, a process of calculating an output result of a striation morphology characterization parameter corresponding to a hole profile image will be described in detail.
In some possible implementations of the present application, identifying the center coordinates of the hole in the hole profile image may include:
extracting the boundary of the hole in the hole profile image to obtain the boundary point coordinates of the hole in the hole profile image;
and calculating the coordinates of the center point of the hole by using the coordinates of the boundary points of the hole.
In this embodiment, the hole profile image is a gray scale image, pixel points of the hole profile image can be quantized to obtain coordinates of each pixel point, and then boundary points of the hole are identified based on a gray scale value change of the deep hole etching morphology boundary, so that coordinates of the boundary points of the hole are obtained. The boundary of the hole can form a closed area, the gravity center point of the closed area can be obtained through calculation according to the boundary point coordinates of the hole, and the coordinates of the gravity center point can be used as the coordinates of the center point of the hole. For example, if the cross section of the hole is a perfect circle, the center point coordinate of the hole is the center point coordinate of the cross-sectional circle.
Step 302: and acquiring length values of n diameters passing through the central point coordinate, wherein n is an integer larger than 1.
Referring to fig. 4, n diameters may be obtained through the center point coordinate, n is an integer greater than 1, and the value of n may be set according to an actual situation. One diameter of a hole in the embodiments of the present application may be understood as a line segment passing through a center point and intersecting two boundary points of the hole.
In some possible implementations of the present application, the specific implementation of obtaining the length values of the n diameters passing through the center point coordinate may include:
acquiring intersection point coordinates of n diameters passing through the central point coordinates and the boundary;
and calculating the length values of the n diameters passing through the center point coordinate by using the intersection point coordinate of each diameter and the boundary.
In the embodiment of the present application, the intersection point of each diameter and the boundary of the hole may be obtained, that is, the intersection point coordinates of the n diameters passing through the central point coordinate and the boundary are obtained, and the intersection point coordinates of the diameters and the boundary are the coordinates of the two end points of the diameters, so that the length value of each diameter passing through the central point coordinate may be obtained by calculation using the intersection point coordinates of each diameter and the boundary.
Step 303: and calculating the variance of the length values of the n diameters, and taking the variance as a streak shape characterization parameter of the hole.
The average value of the n diameter length values can be calculated, then the sum of the difference values of the diameter length values and the average value is calculated, and then the sum is divided by n to obtain the variance of the n diameter length values, wherein the variance can be used as a streak-like morphology characterization parameter of the hole. The larger the streak morphology characterization parameter, the more severe the streak morphology of the hole. For example, referring to FIG. 5, FIG. 5(a) shows a borehole having a perfect circle cross-section with a striation topography characteristic parameter of 0.39nm, and FIG. 5(b) shows a borehole having a more severe cross-section with a striation topography characteristic parameter of 1.19 nm.
However, the severity of the streak-like morphology of the holes represented by the diameter variance of the holes has certain limitations, and in the deep hole etching morphology with large ovality, the severity of the streak-like morphology may be low, but the diameter variance of the holes is large due to the large ovality, so that the characterization parameters of the streak-like morphology are inaccurate in the characterization of the severity of the streak-like morphology. For example, referring to fig. 5, fig. 5(a) shows that a cross section of one deep hole is a perfect circle and its characterization parameter of the striation shape is 0.39nm, fig. 5(c) shows that a cross section of another deep hole is an ellipse and its characterization parameter of the striation shape is 0.88nm, and the difference between the striation shapes of the two deep holes is not large, but the characterization parameter of the striation shape calculated by using the diameter variance of the deep hole with the cross section of the ellipse is larger than that of the striation shape calculated by using the diameter variance of the deep hole with the cross section of the perfect circle, so there is a certain limitation in using the severity of the striation shape of the hole characterized by using the variance.
Therefore, in order to correct the influence of the ovality of the deep hole on the characterization parameters of the striated topography, the embodiment of the application introduces the maximum diameter value and the minimum diameter value of the length values of the n diameters to correct the characterization parameters of the striated topography.
In some possible implementations of the present application, the method for measuring a streak-like morphology characterization parameter provided in the embodiment of the present application may further include:
determining a diameter maximum value and a diameter minimum value from the length values of the n diameters;
calculating the minimum diameter value divided by the maximum diameter value as a first calculation result;
and multiplying the calculated variance by the first calculation result and then multiplying by a preset value to serve as a second calculation result, and taking the second calculation result as a streak-shaped appearance characterization parameter of the hole.
In practical applications, the parameter strain ═ 3Sigma dmin/dmax 0.5 can be characterized by the streak-like morphology of the additional wells, where Sigma is the variance of the length values of n diameters, dmin is the minimum value of the diameter, dmax is the maximum value of the diameter, and 3 and 0.5 are preset values set according to practical conditions. Dmin/dmax can eliminate the effect of hole ovality on the calculation of streak-like topography characterization parameters. Likewise, a larger striation profile characterization parameter indicates a more severe striation profile of the hole.
Since the hole profile image has a plurality of holes, the streak-like morphology characterization parameters of each hole can be calculated according to the method of the above embodiment, and then the average value of the streak-like morphology characterization parameters of each hole in the hole profile image is calculated and used as the output result of the streak-like morphology characterization parameters corresponding to the hole profile image. The output result of the striation topography characterization parameter can characterize the severity of the whole striation topography of the hole profile image. For example, referring to fig. 6, a schematic diagram of a hole profile image with an output result of 0.81nm corresponding to the streak-like morphology characterization parameter is shown, and referring to fig. 7, a schematic diagram of another hole profile image with an output result of 1.55nm corresponding to the streak-like morphology characterization parameter is shown, it can be seen that the severity of the streak-like morphology of the hole profile image in fig. 7 is higher than that of the hole profile image in fig. 6.
In addition, as a plurality of preset positions can be selected in the wafer to output the hole profile images respectively, the streak-like morphology characterization parameter output results corresponding to each hole profile image can be calculated respectively, and the severity of the streak-like morphology of the wafer can be characterized by the average value of the output results of each streak-like morphology characterization parameter.
Therefore, the embodiment of the application identifies the central point coordinate of the deep hole in the deep hole etching morphology in the hole profile image by acquiring the hole profile image output by the electronic scanning microscope, further obtains the length values of a plurality of diameters passing through the central point coordinate, and calculates the variance of the length values of the plurality of diameters as the mark morphology characterization parameter of the deep hole, thereby quantifying the severity of the mark morphology of the deep hole and finally achieving the purpose of quantitatively analyzing the influence of the mark morphology on the electrical property.
Referring to fig. 8, an embodiment of a device for measuring a streak-like morphology characterization parameter is further provided in the embodiment of the present application, which may include:
a first acquiring unit 801 for acquiring a hole profile image output by the scanning electron microscope.
An identification unit 802 for identifying coordinates of a center point of the hole in the hole profile image.
In some possible implementations of the present application, the identifying unit 802 may be specifically configured to:
extracting the boundary of the hole in the hole profile image to obtain the boundary point coordinates of the hole in the hole profile image;
and calculating the coordinates of the center point of the hole by using the coordinates of the boundary points of the hole.
A second obtaining unit 803, configured to obtain length values of n diameters passing through the center point coordinate, where n is an integer greater than 1.
In some possible implementations of the present application, the second obtaining unit 803 may be specifically configured to:
acquiring intersection point coordinates of n diameters passing through the central point coordinates and the boundary;
and calculating the length values of the n diameters passing through the center point coordinate by using the intersection point coordinate of each diameter and the boundary.
The first calculation unit 804 is used for calculating the variance of the length values of the n diameters, and the variance is used as a streak-like morphology characterization parameter of the hole.
In some possible implementations of the present application, the measurement apparatus for measuring a streak-like morphology characterization parameter provided in this application embodiment may further include:
the second calculating unit is used for determining the maximum diameter value and the minimum diameter value from the length values of the n diameters; calculating the minimum diameter value divided by the maximum diameter value as a first calculation result; and multiplying the calculated variance by the first calculation result and then multiplying by a preset value to serve as a second calculation result, and taking the second calculation result as a streak-shaped appearance characterization parameter of the hole.
In some possible implementations of the present application, the measurement apparatus for measuring a streak-like morphology characterization parameter provided in this application embodiment may further include:
and the third calculating unit is used for calculating the average value of the striation shape characterization parameters of each hole in the hole profile image and outputting the average value as a striation shape characterization parameter corresponding to the hole profile image.
Therefore, the embodiment of the application identifies the central point coordinate of the deep hole in the deep hole etching morphology in the hole profile image by acquiring the hole profile image output by the electronic scanning microscope, further obtains the length values of a plurality of diameters passing through the central point coordinate, and calculates the variance of the length values of the plurality of diameters as the mark morphology characterization parameter of the deep hole, thereby quantifying the severity of the mark morphology of the deep hole and finally achieving the purpose of quantitatively analyzing the influence of the mark morphology on the electrical property.
An embodiment of the present invention further provides a server, as shown in fig. 9, where the server may include:
a processor 901, a memory 902, an input device 903, and an output device 904. The number of the processors 901 in the server may be one or more, and one processor is taken as an example in fig. 9. In some embodiments of the present invention, the processor 901, the memory 902, the input device 903 and the output device 904 may be connected through a bus or other means, wherein the connection through the bus is exemplified in fig. 9.
The memory 902 may be used to store software programs and modules, and the processor 901 executes various functional applications of the server and data processing by operating the software programs and modules stored in the memory 902. The memory 902 may mainly include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application program required for at least one function, and the like. Further, the memory 902 may include high speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other volatile solid state storage device. The input device 903 may be used to receive input numeric or character information and generate key signal inputs related to user settings and function control of the server.
Specifically, in this embodiment, the processor 901 loads an executable file corresponding to one or more processes of an application program into the memory 902 according to the following instructions, and the processor 901 runs the application program stored in the memory 902, thereby implementing various functions:
acquiring a hole section image output by an electronic scanning microscope, and identifying the center point coordinates of a hole in the hole section image;
acquiring length values of n diameters passing through a central point coordinate, wherein n is an integer greater than 1;
and calculating the variance of the length values of the n diameters, and taking the variance as a streak shape characterization parameter of the hole.
Optionally, the method may further include:
determining a diameter maximum value and a diameter minimum value from the length values of the n diameters;
calculating the minimum diameter value divided by the maximum diameter value as a first calculation result;
and multiplying the calculated variance by the first calculation result and then multiplying by a preset value to serve as a second calculation result, and taking the second calculation result as a streak-shaped appearance characterization parameter of the hole.
Optionally, the method may further include:
and calculating the average value of the striation shape characterization parameters of each hole in the hole profile image, and outputting the average value as the output result of the striation shape characterization parameters corresponding to the hole profile image.
Alternatively, identifying the center coordinates of the hole in the hole profile image may include:
extracting the boundary of the hole in the hole profile image to obtain the boundary point coordinates of the hole in the hole profile image;
and calculating the coordinates of the center point of the hole by using the coordinates of the boundary points of the hole.
Optionally, obtaining length values of n diameters passing through the center point coordinate may include:
acquiring intersection point coordinates of n diameters passing through the central point coordinates and the boundary;
and calculating the length values of the n diameters passing through the center point coordinate by using the intersection point coordinate of each diameter and the boundary.
In addition, an embodiment of a computer-readable storage medium is provided in the present application, where instructions may be stored in the computer-readable storage medium, and when the instructions are executed on a computer, the instructions cause the computer to execute the measurement method for streak-like morphology characterization parameters provided in the present application.
The embodiment of the present application further provides a computer program product, which when running on a computer, can enable the computer to execute the measurement method for streak-like morphology characterization parameters provided in the embodiment of the present application.
Therefore, the embodiment of the application identifies the central point coordinate of the deep hole in the deep hole etching morphology in the hole profile image by acquiring the hole profile image output by the electronic scanning microscope, further obtains the length values of a plurality of diameters passing through the central point coordinate, and calculates the variance of the length values of the plurality of diameters as the mark morphology characterization parameter of the deep hole, thereby quantifying the severity of the mark morphology of the deep hole and finally achieving the purpose of quantitatively analyzing the influence of the mark morphology on the electrical property.
It should be noted that, in the present specification, the embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. For the system or the device disclosed by the embodiment, the description is simple because the system or the device corresponds to the method disclosed by the embodiment, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The steps of a method or algorithm described in connection with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module may reside in Random Access Memory (RAM), memory, Read Only Memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A method of measuring a striated topography characterization parameter, the method comprising:
acquiring a hole section image output by an electronic scanning microscope, and identifying the center point coordinates of a hole in the hole section image;
acquiring length values of n diameters passing through the central point coordinate, wherein n is an integer greater than 1;
calculating the variance of the length values of the n diameters;
determining a diameter maximum value and a diameter minimum value from the length values of the n diameters;
calculating the minimum diameter value divided by the maximum diameter value as a first calculation result;
and calculating the variance multiplied by the first calculation result and then multiplied by a preset value to serve as a second calculation result, and taking the second calculation result as a streak-shaped appearance characterization parameter of the hole.
2. The method of claim 1, further comprising:
and calculating the average value of the streak-shaped morphology characterization parameters of each hole in the hole profile image, and outputting the average value as a streak-shaped morphology characterization parameter corresponding to the hole profile image.
3. The method of claim 1, wherein said identifying center coordinates of holes in said hole profile image comprises:
extracting the boundary of the hole in the hole profile image to obtain the boundary point coordinates of the hole in the hole profile image;
and calculating the coordinates of the center point of the hole by using the coordinates of the boundary points of the hole.
4. The method of claim 3, wherein obtaining length values for n diameters passing through the center point coordinate comprises:
acquiring intersection point coordinates of the n diameters passing through the central point coordinates and the boundary;
and calculating the length values of the n diameters passing through the central point coordinate by using the intersection point coordinate of each diameter and the boundary.
5. A device for measuring a striated topography characterizing parameter, said device comprising:
a first acquisition unit for acquiring a hole profile image output by an electron scanning microscope;
an identifying unit for identifying coordinates of a center point of a hole in the hole profile image;
the second acquisition unit is used for acquiring length values of n diameters passing through the central point coordinate, wherein n is an integer greater than 1;
a first calculation unit for calculating a variance of length values of the n diameters;
a second calculation unit for determining a diameter maximum value and a diameter minimum value from the length values of the n diameters; calculating the minimum diameter value divided by the maximum diameter value as a first calculation result; and calculating the variance multiplied by the first calculation result and then multiplied by a preset value to serve as a second calculation result, and taking the second calculation result as a streak-shaped appearance characterization parameter of the hole.
6. The apparatus of claim 5, further comprising:
and the third calculating unit is used for calculating the average value of the streak-shaped morphology characterization parameters of each hole in the hole profile image, and the average value is used as the output result of the streak-shaped morphology characterization parameters corresponding to the hole profile image.
7. The apparatus according to claim 5, wherein the identification unit is specifically configured to:
extracting the boundary of the hole in the hole profile image to obtain the boundary point coordinates of the hole in the hole profile image;
and calculating the coordinates of the center point of the hole by using the coordinates of the boundary points of the hole.
8. The apparatus according to claim 7, wherein the second obtaining unit is specifically configured to:
acquiring intersection point coordinates of the n diameters passing through the central point coordinates and the boundary;
and calculating the length values of the n diameters passing through the central point coordinate by using the intersection point coordinate of each diameter and the boundary.
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| CN110687138B (en) * | 2019-09-05 | 2022-08-05 | 长江存储科技有限责任公司 | Method and device for measuring semiconductor structure and extracting boundary characteristic |
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