CN115493536A - Roundness measuring method and device, equipment terminal and readable storage medium - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004364 calculation method Methods 0.000 claims description 17
- 238000004590 computer program Methods 0.000 claims description 9
- 238000000691 measurement method Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000011156 evaluation Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 38
- 238000010586 diagram Methods 0.000 description 9
- 238000004422 calculation algorithm Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/06—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring the deformation in a solid
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
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- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/60—Analysis of geometric attributes
- G06T7/62—Analysis of geometric attributes of area, perimeter, diameter or volume
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- G06T2207/10056—Microscopic image
- G06T2207/10061—Microscopic image from scanning electron microscope
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- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
Abstract
The application relates to a method and a device for measuring roundness, an equipment terminal and a readable storage medium, which are applied to a wafer to be measured, wherein the measuring method comprises the following steps: the method includes the steps of obtaining a gray image corresponding to each hole in each wafer to be measured, extracting edge characteristics of each gray image to obtain an edge closed curve image corresponding to each hole, calculating the mass center of each edge closed curve image, taking the corresponding mass center as the central point of each edge closed curve image, and calculating the roundness corresponding to each hole according to the central point of each edge closed curve image.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a roundness measuring method, a roundness measuring device, an equipment terminal and a readable storage medium.
Background
In the chip manufacturing process, when the critical dimension is close to the resolution limit of the exposure machine or close to the resolution limit of the photoresist, the Edge Roughness (LER) of the pattern starts to deteriorate, and the profile of the developed pattern and the etched pattern is more distorted than that of the designed pattern, which adversely affects the reliability of the chip.
Taking each hole in a wafer as an example, it is necessary to control the profile deformation of each hole in a certain range in the development of photolithography and etching processes, however, since each hole has an irregular shape and a different shape, the current profile deformation measurement method for each hole measures and calculates the corresponding roundness according to the round hole standard to determine whether the hole is qualified, for example, when an elliptical hole appears, two circle centers appear to affect the calculation of the roundness, consume a large amount of calculation resources, and thus affect the progress of the whole process.
Disclosure of Invention
In view of this, the present application provides a method for measuring a roundness, which can quickly calculate the roundness of each hole in a wafer to be measured for each hole with different shapes, and further screen out a wafer with qualified deformation, thereby reducing the influence of a measurement process on the whole process progress.
A method for measuring roundness is applied to a wafer to be measured, and comprises the following steps:
acquiring a gray image corresponding to each hole in each wafer to be measured;
extracting the edge characteristics of each gray level image to obtain an edge closed curve image corresponding to each hole;
calculating the mass center of each edge closed curve image;
taking the corresponding centroid as the central point of each edge closed curve image;
and calculating the roundness corresponding to each hole according to the central point of each edge closed curve image.
In one embodiment, the step of acquiring a grayscale image corresponding to each hole in each wafer to be measured includes:
and measuring the holes in each wafer to be measured by adopting a critical dimension electron scanning microscope to output a gray image corresponding to each hole.
In one embodiment, the step of calculating the roundness of each hole according to the center point of each edge closed curve image comprises:
drawing each straight line passing through the central point and determining the inclination angle of each straight line;
determining the diameter size corresponding to each inclination angle according to the intersection point of each straight line and each edge closed curve image;
and calculating the roundness of each hole according to the diameter size corresponding to each inclination angle.
In one embodiment, the step of calculating the roundness of each hole according to the diameter size corresponding to each inclination angle comprises:
calculating the standard deviation of the diameter corresponding to each inclination angle;
the standard deviation was taken as the roundness of each well.
In one embodiment, the wafer to be measured is provided with a plurality of metal layers, and the holes comprise through holes for realizing interconnection of the metal layers and connecting holes arranged on the metal layers.
In addition, a semiconductor process method is also provided, which comprises the following steps:
providing a wafer to be measured;
measuring each wafer to be measured by adopting the measuring method to obtain the roundness of each hole in each wafer to be measured;
according to the roundness of each hole in each wafer to be measured, comprehensively evaluating the profile deformation of each wafer to be measured to obtain a corresponding deformation evaluation value;
and judging whether each wafer to be measured is qualified or not according to the corresponding deformation evaluation value and a preset deformation threshold value.
In addition, a roundness measuring device is provided, which is applied to a wafer to be measured, and comprises:
the image acquisition unit is used for acquiring a gray image corresponding to each hole in each wafer to be measured;
the edge image generating unit is used for extracting the edge characteristics of each gray level image to obtain an edge closed curve image corresponding to each hole;
the centroid calculation unit is used for calculating the centroid of each edge closed curve image;
the central point determining unit is used for taking the corresponding center of mass as the central point of each edge closed curve image;
and the roundness calculation unit is used for calculating the roundness corresponding to each hole according to the central point of each edge closed curve image.
In one embodiment, the roundness calculation unit includes:
the inclination angle determining unit is used for drawing all straight lines penetrating through the central point and determining the inclination angles of all the straight lines;
the diameter size determining unit is used for determining the diameter size corresponding to each inclination angle according to the intersection point of each straight line and each edge closed curve image;
and the roundness calculation unit is used for calculating the roundness of each hole according to the diameter size corresponding to each inclination angle.
Furthermore, a device terminal is provided, which comprises a processor and a memory for storing a computer program, the processor running the computer program to make the device terminal perform the above-mentioned measurement method.
Furthermore, a readable storage medium is provided, which stores a computer program which, when executed by a processor, performs the above-mentioned measurement method.
The measuring method of the roundness is applied to the wafers to be measured, and comprises the steps of obtaining a gray scale image corresponding to each hole in each wafer to be measured, extracting edge characteristics of each gray scale image to obtain an edge closed curve image corresponding to each hole, calculating the centroid of each edge closed curve image, taking the corresponding centroid as the central point of each edge closed curve image, and calculating the roundness corresponding to each hole according to the central point of each edge closed curve image.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic flowchart of a method for measuring roundness according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram of a grayscale image corresponding to one hole in a wafer to be measured according to an embodiment of the present disclosure;
fig. 3 is a schematic diagram of a grayscale image corresponding to another hole in a wafer to be measured according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram of a grayscale image corresponding to another hole in a wafer to be measured according to an embodiment of the present disclosure;
FIG. 5 is a schematic diagram of an edge closed curve image corresponding to FIG. 2;
FIG. 6 is a schematic diagram of an edge closed curve image corresponding to FIG. 3;
FIG. 7 is a schematic diagram of an edge closed curve image corresponding to FIG. 4;
FIG. 8 is a flow chart illustrating a method for calculating the roundness of each hole according to an embodiment of the present disclosure;
fig. 9 is a schematic view of the diameter of each inclined angle in fig. 5 to 7 according to an embodiment of the present disclosure;
FIG. 10 is a schematic flow chart of another method for calculating the roundness of each hole according to the embodiment of the present application;
FIG. 11 is a schematic flow chart diagram of a semiconductor processing method provided by an embodiment of the present application;
fig. 12 is a block diagram of a roundness measuring apparatus according to an embodiment of the present disclosure;
fig. 13 is a block diagram of a roundness calculation unit according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application are clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application. The following embodiments and their technical features may be combined with each other without conflict.
As shown in fig. 1, a method for measuring a roundness is provided, which is applied to a wafer to be measured, and includes:
step S100, a gray scale image corresponding to each hole in each wafer to be measured is obtained.
When each wafer to be measured is measured, a gray image corresponding to each hole in each wafer to be measured needs to be acquired.
In one embodiment, as shown in fig. 2 to 4, grayscale images corresponding to three holes in a wafer to be measured are obtained.
And step S110, extracting the edge characteristics of each gray level image to obtain an edge closed curve image corresponding to each hole.
The edge feature extraction algorithm can be adopted to extract the edge feature of each gray level image so as to obtain an edge closed curve image corresponding to each hole.
In one embodiment, the edge feature extraction algorithm may be accomplished using an edge feature extraction neural network.
Wherein, the edge characteristics of each hole are accurately reflected by each edge closed curve image.
In one embodiment, as shown in fig. 5 to 7, fig. 5 is an edge closed curve image corresponding to fig. 2, fig. 6 is an edge closed curve image corresponding to fig. 3, and fig. 7 is an edge closed curve image corresponding to fig. 4.
And step S120, calculating the mass center of each edge closed curve image.
The centroid of each edge closed curve image can be calculated through the existing centroid algorithm, as shown in fig. 5 to 7, S1, S2, and S3 are the centroids of the corresponding images, respectively.
And step S130, taking the corresponding centroid as the central point of each edge closed curve image.
And step S140, calculating the roundness corresponding to each hole according to the central point of each edge closed curve image.
After the central point of each edge closed curve image is determined, the roundness corresponding to each hole can be calculated.
Wherein, each hole in the ideal is a standard original shape, and the definition of roundness is as follows: the standard deviation of the "diameter" across the angle of the "center point" of the graph.
The measuring method directly takes the mass center of each edge closed curve image as the corresponding central point, does not need to perform fitting comparison on each edge closed curve image and a standard hole image, greatly reduces the calculation task amount compared with the process that fitting comparison consumes a large amount of calculation resources and time cost is too large, has unique mass center for the edge closed curve images corresponding to holes in various shapes, can quickly calculate the roundness of each hole in a wafer to be measured by taking the mass center as the central point, does not influence the calculation of the roundness due to the fact that a plurality of positioning central points exist, improves the operation efficiency, compresses the time cost, is beneficial to quantitatively evaluating the roundness of each hole in each wafer, provides data support for process research and development, can reduce the influence of the measuring process on the whole, and improves the reliability of chips and devices.
In one embodiment, step S100 includes: and measuring the holes in each wafer to be measured by adopting a critical dimension electron scanning microscope to output a gray image corresponding to each hole.
In one embodiment, as shown in fig. 8, step S140 includes:
in step S141, the respective straight lines passing through the center point are drawn and the inclination angles of the respective straight lines are determined.
In order to accurately determine the diameter of each edge closed curve image, it is necessary to measure the diameter of each angle of each edge closed curve image, and at this time, on the basis of determining the central point in the above step, it is necessary to draw each straight line passing through the central point and determine the inclination angle of each straight line, and then the process proceeds to step S142.
And S142, determining the diameter corresponding to each inclination angle according to the intersection point of each straight line and each edge closed curve image.
On the basis of drawing all straight lines passing through the central point and determining the inclination angles of all the straight lines, the diameters corresponding to all the inclination angles can be further determined according to the intersection points of all the straight lines and all the edge closed curve images.
In one example, taking the edge closed curve images obtained in fig. 5 to 7 as an example, the diameter size corresponding to each tilt angle in fig. 5 is shown as a curve Q3 in fig. 9, the diameter size corresponding to each tilt angle in fig. 6 is shown as a curve Q1 in fig. 9, and the diameter size corresponding to each tilt angle in fig. 7 is shown as a curve Q2 in fig. 9, wherein the abscissa represents the angle and the ordinate represents the size (nm).
And step S143, calculating the roundness of each hole according to the diameter corresponding to each inclination angle.
In one embodiment, the diameter standard deviation of the holes corresponding to fig. 2 to 4 is calculated respectively and used as the roundness of the holes corresponding to fig. 2 to 4 respectively, based on the diameter size data shown in fig. 9, wherein D1 is the diameter standard deviation of the holes corresponding to fig. 2, D2 is the diameter standard deviation of the holes corresponding to fig. 3, and D3 is the diameter standard deviation of the holes corresponding to fig. 4, with reference to the following table.
In one embodiment, as shown in fig. 10, step S143 includes:
in step S143a, a standard deviation of the diameter corresponding to each tilt angle is calculated.
Step S143b, the standard deviation is taken as the roundness of each well.
In one embodiment, the wafer to be measured is provided with a plurality of metal layers, and the holes comprise through holes for realizing interconnection of the metal layers and connecting holes arranged on the metal layers.
In addition, as shown in fig. 11, there is also provided a semiconductor process method including:
step S200, a wafer to be measured is provided.
Step S210, measuring each wafer to be measured by using the above measuring method, and obtaining the roundness of each hole in each wafer to be measured.
Step S220, according to the roundness of each hole in each wafer to be measured, the contour deformation of each wafer to be measured is comprehensively evaluated to obtain a corresponding deformation evaluation value.
Step S230, determining whether each wafer to be measured is qualified according to the corresponding deformation evaluation value and a preset deformation threshold.
In addition, as shown in fig. 12, there is provided a measuring apparatus 300 for measuring a roundness, which is applied to a wafer to be measured, the measuring apparatus 300 including:
an image obtaining unit 310, configured to obtain a grayscale image corresponding to each hole in each wafer to be measured;
an edge image generating unit 320, configured to extract edge features of each grayscale image to obtain an edge closed curve image corresponding to each hole;
a centroid calculation unit 330 for calculating a centroid of each edge closed curve image;
a central point determining unit 340, configured to use the corresponding centroid as a central point of each edge closed curve image;
and a roundness calculation unit 350, configured to calculate a roundness corresponding to each hole according to a center point of each edge closed curve image.
In one embodiment, as shown in fig. 13, the roundness calculation unit 350 includes:
an inclination angle determining unit 350a for drawing each straight line passing through the central point and determining an inclination angle of each straight line;
the diameter size determining unit 350b is used for determining the diameter size corresponding to each inclination angle according to the intersection point of each straight line and each edge closed curve image;
and a roundness calculation unit 350c for calculating the roundness of each hole based on the respective diameters corresponding to the respective inclination angles.
Furthermore, a device terminal is provided, which comprises a processor and a memory for storing a computer program, the processor running the computer program to make the device terminal perform the above-mentioned measurement method.
Furthermore, a readable storage medium is provided, which stores a computer program, which when executed by a processor, performs the above-mentioned measurement method.
The division of the units in the measuring apparatus 300 is only for illustration, and in other embodiments, the measuring apparatus 300 may be divided into different units as needed to complete all or part of the functions of the measuring apparatus 300. For the specific limitations of the measuring apparatus 300, reference may be made to the limitations of the method above, and details are not repeated herein.
That is, the above description is only an embodiment of the present application, and not intended to limit the scope of the present application, and all equivalent structures or equivalent flow transformations made by using the contents of the specification and the drawings, such as mutual combination of technical features between various embodiments, or direct or indirect application to other related technical fields, are included in the scope of the present application.
In addition, structural elements having the same or similar characteristics may be identified by the same or different reference numerals. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In this application, the word "for example" is used to mean "serving as an example, instance, or illustration". Any embodiment described herein as "for example" is not necessarily to be construed as preferred or advantageous over other embodiments. The previous description is provided to enable any person skilled in the art to make or use the present application. In the foregoing description, various details have been set forth for the purpose of explanation.
It will be apparent to one of ordinary skill in the art that the present application may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the present application with unnecessary detail. Thus, the present application is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
Claims (10)
1. A method for measuring roundness is applied to a wafer to be measured, and the method comprises the following steps:
acquiring a gray image corresponding to each hole in each wafer to be measured;
extracting the edge characteristics of each gray image to obtain an edge closed curve image corresponding to each hole;
calculating the centroid of each edge closed curve image;
taking the corresponding center of mass as the center point of each edge closed curve image;
and calculating the roundness corresponding to each hole according to the central point of each edge closed curve image.
2. The measurement method according to claim 1, wherein the step of acquiring a grayscale image corresponding to each hole in each wafer to be measured comprises:
and measuring the holes in each wafer to be measured by adopting a critical dimension electron scanning microscope to output a gray scale image corresponding to each hole.
3. The method of claim 1, wherein the step of calculating the roundness of each hole from the center point of each edge closed curve image comprises:
drawing all straight lines passing through the central point and determining the inclination angles of all the straight lines;
determining the diameter corresponding to each inclination angle according to the intersection point of each straight line and each edge closed curve image;
and calculating the roundness of each hole according to the diameter size corresponding to each inclination angle.
4. The measuring method according to claim 3, wherein the step of calculating the roundness of each hole according to the respective diameters of the respective inclined angles comprises:
calculating the standard deviation of the diameters corresponding to the inclination angles;
the standard deviation was taken as the roundness of each well.
5. The measurement method according to claim 1, wherein the wafer to be measured is provided with a plurality of metal layers, and the holes include through holes for realizing interconnection of the metal layers and connection holes provided on the metal layers.
6. A semiconductor processing method, comprising:
providing a wafer to be measured;
measuring each wafer to be measured by adopting the measuring method of any one of claims 1 to 5 to obtain the roundness of each hole in each wafer to be measured;
according to the roundness of each hole in each wafer to be measured, comprehensively evaluating the profile deformation of each wafer to be measured to obtain a corresponding deformation evaluation value;
and judging whether each wafer to be measured is qualified or not according to the corresponding deformation evaluation value and a preset deformation threshold value.
7. A roundness measuring apparatus applied to a wafer to be measured, the apparatus comprising:
the image acquisition unit is used for acquiring a gray image corresponding to each hole in each wafer to be measured;
the edge image generating unit is used for extracting the edge characteristics of each gray image to obtain an edge closed curve image corresponding to each hole;
the centroid calculating unit is used for calculating the centroid of each edge closed curve image;
a central point determining unit, configured to use the corresponding centroid as a central point of each of the edge closed curve images;
and the roundness calculation unit is used for calculating the roundness corresponding to each hole according to the central point of each edge closed curve image.
8. The measurement device according to claim 7, wherein the roundness calculation unit includes:
the inclination angle determining unit is used for drawing all straight lines penetrating through the central point and determining the inclination angles of all the straight lines;
the diameter size determining unit is used for determining the diameter size corresponding to each inclination angle according to the intersection point of each straight line and each edge closed curve image;
and the roundness calculation unit is used for calculating the roundness of each hole according to the diameter size corresponding to each inclination angle.
9. A device terminal, characterized in that the device terminal comprises a processor and a memory for storing a computer program, the processor running the computer program to cause the device terminal to perform the measurement method of any of claims 1 to 5.
10. A readable storage medium, characterized in that the readable storage medium stores a computer program which, when executed by a processor, implements the measurement method of any one of claims 1 to 5.
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Application publication date: 20221220 |