CN107557739A - Substitute the low temperature thin film layer making technology of black printing spraying - Google Patents
Substitute the low temperature thin film layer making technology of black printing spraying Download PDFInfo
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- CN107557739A CN107557739A CN201710851585.1A CN201710851585A CN107557739A CN 107557739 A CN107557739 A CN 107557739A CN 201710851585 A CN201710851585 A CN 201710851585A CN 107557739 A CN107557739 A CN 107557739A
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Abstract
The invention discloses a kind of low temperature thin film layer making technology for substituting black printing spraying, including step：Pass through physical vapour deposition (PVD) in product surface（PVD）Form titanium dioxide layer；Layers of chrome or indium tin layer are formed by PVD on the surface of titanium dioxide layer；Titanium dioxide layer is formed by PVD on the surface of layers of chrome or indium tin layer；Repeat the above steps repeatedly, obtain the titanium dioxide layer and layers of chrome or indium tin layer of multilayer interactive stacking, and outermost layer is titanium dioxide layer.Black film layer can be obtained in finished surface, the technique can substitute black spraying printing, and obtained membrane uniformity is good and more environmentally friendly.
Description
Technical field
The invention belongs to vacuum film manufacture field, more particularly to a kind of low temperature thin film layer for substituting black printing spraying
Making technology and obtained black film layer.
Background technology
The technique for forming black coating in product surface at present, all using spraying or print to be realized, it is special
Vacuum high-temperature processing procedure can be used（Technological temperature is more than 100 °）, but can not be real in the material of the non-high-temperature resistants such as plastic material
Existing black coating technique.
Spraying or typography easily cause atmospheric environment destruction, the waste of yields raw material in production, and product applies
The lack of homogeneity of layer, trim designs tolerance, assembly difficulty etc. caused by coating is too thick, special stereoscopic appearance design can not be met
The demand of client.
The content of the invention
For above-mentioned technical problem, the present invention seeks to：It is thin to provide a kind of low temperature for substituting black printing spraying
Film layer making technology, black film layer can be obtained in finished surface, the technique can substitute black spraying printing, obtained film layer
Uniformity is good, and more environmentally friendly.
The technical scheme is that：
A kind of low temperature thin film layer making technology for substituting black printing spraying, comprises the following steps：
S01：Pass through physical vapour deposition (PVD) in product surface（PVD）Form titanium dioxide layer；
S02：Layers of chrome or indium tin layer are formed by PVD on the surface of titanium dioxide layer；
S03：Titanium dioxide layer is formed by PVD on the surface of layers of chrome or indium tin layer；
S04：Repeat step S02 and S03 obtains the titanium dioxide layer and layers of chrome or indium tin layer of multilayer interactive stacking to multiple, and
And outermost layer is titanium dioxide layer.
Preferably, the PVD is sputtering.
Preferably, the titanium dioxide layer is four layers, and the layers of chrome or indium tin layer are three layers.
Preferably, the first layer titanium dioxide layer is identical with the thickness of second layer titanium dioxide layer, the first layer chromium
Layer or indium tin layer are identical with the thickness of second layer layers of chrome or indium tin layer, each afterwards layer of titanium dioxide layer and layers of chrome or indium tin layer
Thickness increase successively.
Preferably, the thickness of the first layer titanium dioxide layer is 10nm-35nm, first layer layers of chrome or indium tin layer thickness
For 80nm-150nm, the thickness of second layer titanium dioxide layer is 10nm-35nm, and the thickness of second layer layers of chrome or indium tin layer is
80nm-150nm, the thickness of third layer titanium dioxide layer are 100nm-170nm, and the thickness of third layer layers of chrome or indium tin layer is
300nm-550nm, the thickness of the 4th layer of titanium dioxide layer is 150nm-235nm.
The invention also discloses a kind of black film layer for being formed at product surface, including：
Form the titanium dioxide layer in product surface；
Form the layers of chrome or indium tin layer in titanium dioxide layer surface；And
The titanium dioxide layer of multilayer interactive stacking and layers of chrome or indium tin layer, and outermost layer is titanium dioxide layer.
Preferably, the titanium dioxide layer is provided with modification layer with product table surface layer.
Preferably, the titanium dioxide layer is four layers, and the layers of chrome or indium tin layer are three layers.
Preferably, the first layer titanium dioxide layer is identical with the thickness of second layer titanium dioxide layer, the first layer chromium
Layer or indium tin layer are identical with the thickness of second layer layers of chrome or indium tin layer, each afterwards layer of titanium dioxide layer and layers of chrome or indium tin layer
Thickness increase successively.
Preferably, the thickness of the first layer titanium dioxide layer is 10nm-35nm, first layer layers of chrome or indium tin layer thickness
For 80nm-150nm, the thickness of second layer titanium dioxide layer is 10nm-35nm, and the thickness of second layer layers of chrome or indium tin layer is
80nm-150nm, the thickness of third layer titanium dioxide layer are 100nm-170nm, and the thickness of third layer layers of chrome or indium tin layer is
300nm-550nm, the thickness of the 4th layer of titanium dioxide layer is 150nm-235nm.
Compared with prior art, it is an advantage of the invention that：
The technique can obtain black film layer in finished surface, and the technique can substitute black spraying printing, and obtained film layer is equal
Even property is good and more environmentally friendly.Black coating technique can be realized in the material of the non-high-temperature resistants such as plastic material.
Brief description of the drawings
Below in conjunction with the accompanying drawings and embodiment the invention will be further described：
Fig. 1 is the structure chart for the black film layer that the present invention is formed at product surface；
Fig. 2 is the flow chart for the low temperature thin film layer making technology that the present invention substitutes black printing spraying.
Embodiment
To make the object, technical solutions and advantages of the present invention of greater clarity, with reference to embodiment and join
According to accompanying drawing, the present invention is described in more detail.It should be understood that these descriptions are merely illustrative, and it is not intended to limit this hair
Bright scope.In addition, in the following description, the description to known features and technology is eliminated, to avoid unnecessarily obscuring this
The concept of invention.
Black is substantially defined as no any visible ray and enters visual range, and all coloured light is caused by absorbing.Will
It is black to make film layer, and it must absorb all coloured light.
As shown in figure 1, the black film layer for being formed at product surface of the present invention, including：
Form the titanium dioxide layer 20 in product surface 10；
Form the layers of chrome or indium tin layer 30 on the surface of titanium dioxide layer 20；
Form the titanium dioxide layer 21 on layers of chrome or the surface of indium tin layer 30；
Form the layers of chrome or indium tin layer 31 on the surface of titanium dioxide layer 21；
Form the titanium dioxide layer 22 on layers of chrome or the surface of indium tin layer 31；
Form the layers of chrome or indium tin layer 32 on the surface of titanium dioxide layer 31；
Form the titanium dioxide layer 23 on layers of chrome or the surface of indium tin layer 32.
Here using titanium dioxide layer as four layers, exemplified by layers of chrome or indium tin layer are three layers, it is of course possible to interacted for other multilayers
The titanium dioxide layer of stacking and layers of chrome or indium tin layer, and outermost layer is titanium dioxide layer.
The thickness of first layer titanium dioxide layer and second layer titanium dioxide layer can with identical, first layer layers of chrome or indium tin layer with
The thickness of second layer layers of chrome or indium tin layer can with identical, each afterwards layer of titanium dioxide layer and the thickness of layers of chrome or indium tin layer according to
Secondary increase.
The thickness of first layer titanium dioxide layer is 10nm-35nm, and the thickness of first layer layers of chrome or indium tin layer is 80nm-
150nm, the thickness of second layer titanium dioxide layer are 10nm-35nm, and the thickness of second layer layers of chrome or indium tin layer is 80nm-150nm,
The thickness of third layer titanium dioxide layer is 100nm-170nm, and the thickness of third layer layers of chrome or indium tin layer is 300nm-550nm,
The thickness of four layers of titanium dioxide layer is 150nm-235nm.
In titanium dioxide layer and product table surface layer, modification layer can be set.Increase the affinity of adhesion layer.
Pass through physical vapour deposition (PVD) in principle（PVD）Can form film layer, the present invention in a manner of sputtering exemplified by carry out
Explanation.
Embodiment 1：
As shown in Fig. 2 a kind of low temperature thin film layer making technology for substituting black printing spraying, comprises the following steps：
A. raw material quality is examined：Finished surface cut, outward appearance cleanliness factor to raw material carry out quality examination；
B. vacuumize process in vacuum coating equipment：The raw material of requirement up to specification are placed in tool fixture, are sent into vacuum
Vacuumized in equipment；
C. plasma-based cleaning treatment：It is sent into plasma-based ion source apparatus, while pours argon gas, setting preset pressure value to 1.0*10-
3torr--6.0*10-2torr carries out cleaning treatment；
D. plasma-based modifying process：Argon gas is poured in modification Ethylmercurichlorendimide material sections, electron gun passes through high voltage and current, caused electronics
Beam energy deflects to the Al of Ethylmercurichlorendimide level2O3So that Al2O3It is that gaseous molecular shape forms modification on raw material surface by Solid State Transformation
Film layer；
E. photoresistance storehouse is handled：Nitrogen is poured in function Ethylmercurichlorendimide material sections, electron gun passes through high voltage and current, caused electronics
Beam energy deflects to the titanium dioxide of Ethylmercurichlorendimide level so that titanium dioxide is that gaseous molecular shape is modifying film layer table by Solid State Transformation
Face forms titanium dioxide layer, and the thickness of titanium dioxide layer is 10nm；
Electron gun deflects to the chromium of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that chromium is by Solid State Transformation
Gaseous molecular shape forms layers of chrome in titanium dioxide layer surface, and the thickness of layers of chrome is 80nm；
Electron gun deflects to the titanium dioxide of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that titanium dioxide
It is that gaseous molecular shape forms titanium dioxide layer on layers of chrome surface by Solid State Transformation, the thickness of titanium dioxide layer is 10nm；
Electron gun deflects to the chromium of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that chromium is by Solid State Transformation
Gaseous molecular shape forms layers of chrome in titanium dioxide layer surface, and the thickness of layers of chrome is 80nm；
Electron gun deflects to the titanium dioxide of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that titanium dioxide
It is that gaseous molecular shape forms titanium dioxide layer on layers of chrome surface by Solid State Transformation, the thickness of titanium dioxide layer is 100nm；
Electron gun deflects to the chromium of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that chromium is by Solid State Transformation
Gaseous molecular shape forms layers of chrome in titanium dioxide layer surface, and the thickness of layers of chrome is 300nm；
Electron gun deflects to the titanium dioxide of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that titanium dioxide
It is that gaseous molecular shape forms titanium dioxide layer on layers of chrome surface by Solid State Transformation, the thickness of titanium dioxide layer is 150nm.
Embodiment 2：
A kind of low temperature thin film layer making technology for substituting black printing spraying, comprises the following steps：
A. raw material quality is examined：Finished surface cut, outward appearance cleanliness factor to raw material carry out quality examination；
B. vacuumize process in vacuum coating equipment：The raw material of requirement up to specification are placed in tool fixture, are sent into vacuum
Vacuumized in equipment；
C. plasma-based cleaning treatment：It is sent into plasma-based ion source apparatus, while pours argon gas, setting preset pressure value to 1.0*10-
3torr--6.0*10-2torr carries out cleaning treatment；
D. photoresistance storehouse is handled：Nitrogen is poured in function Ethylmercurichlorendimide material sections, electron gun passes through high voltage and current, caused electronics
Beam energy deflects to the titanium dioxide of Ethylmercurichlorendimide level so that titanium dioxide is that gaseous molecular shape is modifying film layer table by Solid State Transformation
Face forms titanium dioxide layer, and the thickness of titanium dioxide layer is 20nm；
Electron gun deflects to the chromium of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that chromium is by Solid State Transformation
Gaseous molecular shape forms layers of chrome in titanium dioxide layer surface, and the thickness of layers of chrome is 100nm；
Electron gun deflects to the titanium dioxide of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that titanium dioxide
It is that gaseous molecular shape forms titanium dioxide layer on layers of chrome surface by Solid State Transformation, the thickness of titanium dioxide layer is 15nm；
Electron gun deflects to the chromium of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that chromium is by Solid State Transformation
Gaseous molecular shape forms layers of chrome in titanium dioxide layer surface, and the thickness of layers of chrome is 90nm；
Electron gun deflects to the titanium dioxide of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that titanium dioxide
It is that gaseous molecular shape forms titanium dioxide layer on layers of chrome surface by Solid State Transformation, the thickness of titanium dioxide layer is 120nm；
Electron gun deflects to the chromium of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that chromium is by Solid State Transformation
Gaseous molecular shape forms layers of chrome in titanium dioxide layer surface, and the thickness of layers of chrome is 400nm；
Electron gun deflects to the titanium dioxide of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that titanium dioxide
It is that gaseous molecular shape forms titanium dioxide layer on layers of chrome surface by Solid State Transformation, the thickness of titanium dioxide layer is 200nm.
Embodiment 3：
A kind of low temperature thin film layer making technology for substituting black printing spraying, comprises the following steps：
A. raw material quality is examined：Finished surface cut, outward appearance cleanliness factor to raw material carry out quality examination；
B. vacuumize process in vacuum coating equipment：The raw material of requirement up to specification are placed in tool fixture, are sent into vacuum
Vacuumized in equipment；
C. plasma-based cleaning treatment：It is sent into plasma-based ion source apparatus, while pours argon gas, setting preset pressure value to 1.0*10-
3torr--6.0*10-2torr carries out cleaning treatment；
D. photoresistance storehouse is handled：Nitrogen is poured in function Ethylmercurichlorendimide material sections, electron gun passes through high voltage and current, caused electronics
Beam energy deflects to the titanium dioxide of Ethylmercurichlorendimide level so that titanium dioxide is that gaseous molecular shape is modifying film layer table by Solid State Transformation
Face forms titanium dioxide layer, and the thickness of titanium dioxide layer is 35nm；
Electron gun deflects to the chromium of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that chromium is by Solid State Transformation
Gaseous molecular shape forms layers of chrome in titanium dioxide layer surface, and the thickness of layers of chrome is 150nm；
Electron gun deflects to the titanium dioxide of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that titanium dioxide
It is that gaseous molecular shape forms titanium dioxide layer on layers of chrome surface by Solid State Transformation, the thickness of titanium dioxide layer is 35nm；
Electron gun deflects to the chromium of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that chromium is by Solid State Transformation
Gaseous molecular shape forms layers of chrome in titanium dioxide layer surface, and the thickness of layers of chrome is 150nm；
Electron gun deflects to the titanium dioxide of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that titanium dioxide
It is that gaseous molecular shape forms titanium dioxide layer on layers of chrome surface by Solid State Transformation, the thickness of titanium dioxide layer is 170nm；
Electron gun deflects to the chromium of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that chromium is by Solid State Transformation
Gaseous molecular shape forms layers of chrome in titanium dioxide layer surface, and the thickness of layers of chrome is 550nm；
Electron gun deflects to the titanium dioxide of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that titanium dioxide
It is that gaseous molecular shape forms titanium dioxide layer on layers of chrome surface by Solid State Transformation, the thickness of titanium dioxide layer is 235nm.
Embodiment 4：
A kind of low temperature thin film layer making technology for substituting black printing spraying, comprises the following steps：
A. raw material quality is examined：Finished surface cut, outward appearance cleanliness factor to raw material carry out quality examination；
B. vacuumize process in vacuum coating equipment：The raw material of requirement up to specification are placed in tool fixture, are sent into vacuum
Vacuumized in equipment；
C. plasma-based cleaning treatment：It is sent into plasma-based ion source apparatus, while pours argon gas, setting preset pressure value to 1.0*10-
3torr--6.0*10-2torr carries out cleaning treatment；
D. photoresistance storehouse is handled：Nitrogen is poured in function Ethylmercurichlorendimide material sections, electron gun passes through high voltage and current, caused electronics
Beam energy deflects to the titanium dioxide of Ethylmercurichlorendimide level so that titanium dioxide is that gaseous molecular shape is modifying film layer table by Solid State Transformation
Face forms titanium dioxide layer, and the thickness of titanium dioxide layer is 20nm；
For electron gun by high voltage and current, caused beam energy deflects to the indium tin of Ethylmercurichlorendimide level so that indium tin is turned by solid-state
It is changed into gaseous molecular shape and forms indium tin layer in titanium dioxide layer surface, the thickness of indium tin layer is 950nm；
Electron gun deflects to the titanium dioxide of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that titanium dioxide
It is that gaseous molecular shape forms titanium dioxide layer on indium tin layer surface by Solid State Transformation, the thickness of titanium dioxide layer is 25nm；
For electron gun by high voltage and current, caused beam energy deflects to the indium tin of Ethylmercurichlorendimide level so that indium tin is turned by solid-state
It is changed into gaseous molecular shape and forms indium tin layer in titanium dioxide layer surface, the thickness of indium tin layer is 95nm；
Electron gun deflects to the titanium dioxide of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that titanium dioxide
It is that gaseous molecular shape forms titanium dioxide layer on indium tin layer surface by Solid State Transformation, the thickness of titanium dioxide layer is 135nm；
For electron gun by high voltage and current, caused beam energy deflects to the indium tin of Ethylmercurichlorendimide level so that indium tin is turned by solid-state
It is changed into gaseous molecular shape and forms indium tin layer in titanium dioxide layer surface, the thickness of indium tin layer is 380nm；
Electron gun deflects to the titanium dioxide of Ethylmercurichlorendimide level by high voltage and current, caused beam energy so that titanium dioxide
It is that gaseous molecular shape forms titanium dioxide layer on indium tin layer surface by Solid State Transformation, the thickness of titanium dioxide layer is 180nm.
It should be appreciated that the above-mentioned embodiment of the present invention is used only for exemplary illustration or explains the present invention's
Principle, without being construed as limiting the invention.Therefore, that is done without departing from the spirit and scope of the present invention is any
Modification, equivalent substitution, improvement etc., should be included in the scope of the protection.In addition, appended claims purport of the present invention
Covering the whole changes fallen into scope and border or this scope and the equivalents on border and repairing
Change example.
Claims (10)
1. a kind of low temperature thin film layer making technology for substituting black printing spraying, it is characterised in that comprise the following steps：
S01：Pass through physical vapour deposition (PVD) in product surface（PVD）Form titanium dioxide layer；
S02：Layers of chrome or indium tin layer are formed by PVD on the surface of titanium dioxide layer；
S03：Titanium dioxide layer is formed by PVD on the surface of layers of chrome or indium tin layer；
S04：Repeat step S02 and S03 obtains the titanium dioxide layer and layers of chrome or indium tin layer of multilayer interactive stacking to multiple, and
And outermost layer is titanium dioxide layer.
2. the low temperature thin film layer making technology according to claim 1 for substituting black printing spraying, it is characterised in that described
PVD is sputtering.
3. the low temperature thin film layer making technology according to claim 1 for substituting black printing spraying, it is characterised in that described
Titanium dioxide layer is four layers, and the layers of chrome or indium tin layer are three layers.
4. the low temperature thin film layer making technology for substituting black printing spraying according to claim 1 or 3, it is characterised in that
The first layer titanium dioxide layer is identical with the thickness of second layer titanium dioxide layer, the first layer layers of chrome or indium tin layer and second
The thickness of layer layers of chrome or indium tin layer is identical, and each afterwards layer of titanium dioxide layer increases successively with the thickness of layers of chrome or indium tin layer.
5. the low temperature thin film layer making technology according to claim 4 for substituting black printing spraying, it is characterised in that described
The thickness of first layer titanium dioxide layer is 10nm-35nm, and the thickness of first layer layers of chrome or indium tin layer is 80nm-150nm, the second layer
The thickness of titanium dioxide layer is 10nm-35nm, and the thickness of second layer layers of chrome or indium tin layer is 80nm-150nm, third layer titanium dioxide
The thickness of titanium layer is 100nm-170nm, and the thickness of third layer layers of chrome or indium tin layer is 300nm-550nm, the 4th layer of titanium dioxide
The thickness of layer is 150nm-235nm.
A kind of 6. black film layer for being formed at product surface, it is characterised in that including：
Form the titanium dioxide layer in product surface；
Form the layers of chrome or indium tin layer in titanium dioxide layer surface；And
The titanium dioxide layer of multilayer interactive stacking and layers of chrome or indium tin layer, and outermost layer is titanium dioxide layer.
7. the black film layer according to claim 6 for being formed at product surface, it is characterised in that the titanium dioxide layer with
Product table surface layer is provided with modification layer.
8. the black film layer according to claim 6 for being formed at product surface, it is characterised in that the titanium dioxide layer is
Four layers, the layers of chrome or indium tin layer are three layers.
9. the black film layer for being formed at product surface according to claim 6 or 8, it is characterised in that the first layer two
Titanium oxide layer is identical with the thickness of second layer titanium dioxide layer, the first layer layers of chrome or indium tin layer and second layer layers of chrome or indium tin
The thickness of layer is identical, and each afterwards layer of titanium dioxide layer increases successively with the thickness of layers of chrome or indium tin layer.
10. the black film layer according to claim 9 for being formed at product surface, it is characterised in that the first layer dioxy
The thickness for changing titanium layer is 10nm-35nm, and the thickness of first layer layers of chrome or indium tin layer is 80nm-150nm, second layer titanium dioxide layer
Thickness be 10nm-35nm, the thickness of second layer layers of chrome or indium tin layer is 80nm-150nm, the thickness of third layer titanium dioxide layer
For 100nm-170nm, the thickness of third layer layers of chrome or indium tin layer is 300nm-550nm, and the thickness of the 4th layer of titanium dioxide layer is
150nm-235nm。
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| CN201710851585.1A CN107557739A (en) | 2017-09-19 | 2017-09-19 | Substitute the low temperature thin film layer making technology of black printing spraying |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113448003A (en) * | 2020-03-26 | 2021-09-28 | 比亚迪股份有限公司 | Black film layer assembly, preparation method thereof and electronic equipment |
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|---|---|---|---|---|
| CN101628492A (en) * | 2008-07-15 | 2010-01-20 | 比亚迪股份有限公司 | Film coating material and preparation method thereof |
| CN101629028A (en) * | 2009-08-27 | 2010-01-20 | 北京科技大学 | Multifunctional alumina/metal micro-laminated coating |
| CN204675999U (en) * | 2015-06-16 | 2015-09-30 | 广东迪奥应用材料科技有限公司 | A kind of colored coated article |
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2017
- 2017-09-19 CN CN201710851585.1A patent/CN107557739A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101628492A (en) * | 2008-07-15 | 2010-01-20 | 比亚迪股份有限公司 | Film coating material and preparation method thereof |
| CN101629028A (en) * | 2009-08-27 | 2010-01-20 | 北京科技大学 | Multifunctional alumina/metal micro-laminated coating |
| CN204675999U (en) * | 2015-06-16 | 2015-09-30 | 广东迪奥应用材料科技有限公司 | A kind of colored coated article |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113448003A (en) * | 2020-03-26 | 2021-09-28 | 比亚迪股份有限公司 | Black film layer assembly, preparation method thereof and electronic equipment |
| CN113448003B (en) * | 2020-03-26 | 2022-07-15 | 比亚迪股份有限公司 | Black film component, preparation method thereof and electronic equipment |
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