CN107546182A

CN107546182A - Graphene buffer layers structure

Info

Publication number: CN107546182A
Application number: CN201610460520.XA
Authority: CN
Inventors: 陆宇; 陈昭; 程玉华
Original assignee: Shanghai Research Institute of Microelectronics of Peking University
Current assignee: Shanghai Research Institute of Microelectronics of Peking University
Priority date: 2016-06-23
Filing date: 2016-06-23
Publication date: 2018-01-05

Abstract

The present invention proposes a kind of graphene buffer layers structure, to improve the radiating efficiency of power device, strengthens electric conductivity and stress release.The structure includes：Surround the graphene buffer layers structure of tube core and its contact with die contact.The graphene buffer layers physical dimension is different according to die-size and changes, and slightly larger than die-size, whole tube core is wrapped in interior.The contact is also slightly different according to different types of tube core, its number and location.

Description

Graphene buffer layers structure

Technical field

The present invention relates to integrated circuit fields, more particularly to the technical field of heat dissipation of power device, high reliability device and Encapsulation field.

Background technology

As technology develops, requirement of the industrial quarters to IC-components also more and more higher is increasingly elevated in order to tackle Industrial quarters demand, various technologies also are occurring to change with material used by device.Such as use new material（Gallium nitride）Generation The silicon materials used during for making chip；For power device and high reliability device, the requirement of its conductive radiator is also progressively Improve；In order to tackle the use environment of different temperature, the stress variation of chip should also step up etc..

As integrated circuit includes the increasingly extensive of semiconductor device application, in the situation that chip performance gap itself is limited Under, the environmental resistance of chip finished product also becomes an important factor for determining device performance.

It is based on the following considerations, the extensive concern of the encapsulation of device by industry：

1, for high power device, prolonged intensive work can produce substantial amounts of heat, cause device operating temperature to raise. If these substantial amounts of heat produceds can not be gone out in time, the damage of device is easily lead to, and then cause whole system Collapse.And it is only one side radiating that the radiating of device at present is horizontal, also without suitable radiator structure, this is allowed at present some Chip device can not fully meet some high reliability, the cooling requirements of high power density device.If increase can be passed through Thermal conductive surface quantity increases its thermal conductivity, then can greatly improve the service life and reliability of chip device；

2, generally when temperature raises or reduces, device can produce a certain degree of change in shape, cause device inside stress Generation.Silicon materials used in former technique, its thermal coefficient of expansion is relatively small, and with the development of technology, nitrogen Change the high expansion coefficient materials such as gallium to start to replace silicon materials.In this case, same heat can cause in chip device Portion's stress is greatly increased, if not changing the outer cushioning layer material of tube core, huge hidden danger can be produced to chip device；

3, device is for electricity component, it is necessary to good electric conductivity.Conventional only has upper and lower surface to lead when industrially internally welding Electricity, conductive area is limited, and impedance is larger.If its conductive area can be increased, smaller impedance is had at work, is also had More preferable electric conductivity.

The content of the invention

In order to solve the above problems, the present invention proposes graphene buffer layers structure：The graphene buffer layers structure will Tube core wraps up, but is not exclusively contacted with tube core fitting, but carries out contact with tube core by contact and be connected, described and die contact Contact be respectively at the diverse location of buffer layer structure and directly contacted with tube core.

Optionally, the space body that the graphene buffer layers are formed can be closing or non-close.

Optionally, the graphene buffer layers structure, which has, accommodates the through hole that the pin being connected with tube core passes through.

Optionally, the position of the through hole and quantity are corresponding with the tube core structure in cushion.

Optionally, the spacing of the contact and adjacent contacts is equal or unequal.

Preferably, the contact is the extension of graphene buffer layers structure, connects tube core and graphene buffer layers knot respectively Structure, form a path.The graphene buffer layers structure is directly contacted by contact with tube core, can be by tube core worked Caused substantial amounts of heat is delivered on graphene by contact in journey, and passes through graphene good thermal conductivity and structure in itself The more plane large area of itself, radiate in time.

Optionally, the graphene buffer layers structure can use as the electrode of tube core.Utilize this graphene buffer layers Structure, high current passage can be widened with equivalent, reduce impedance.

Optionally, the graphene buffer layers structure can apply in three-dimensional packaging technology or non-three-dimensional packaging technology In.

In addition, graphene good ductility and coefficient of thermal expansion in itself, will be using the tube core that new material makes in work shape Caused various stress are discharged well under state, are prevented it from producing ductile fracture, are effectively protected chip.

Brief description of the drawings

Fig. 1 is graphene buffer layers structure of the present invention.

Embodiment

The problem of being referred to for background technology, present inventor's analysis are drawn：If a kind of cushion knot can be proposed Structure, it is increased conductive and heat-conductive than past cushion and is discharged the ability of stress, then would not produce background technology The problem of mentioning.

Based on above-mentioned idea, the embodiment of the present invention proposes following graphene buffer layers structure, and the structure includes：

The contact directly contacted with device inside tube core, the contact, contacted respectively with tube core diverse location, population size shape Position would also vary from according to tube core difference；Graphene buffer layers structure, the graphene buffer layers encapsulated by structures is in tube core Outside, its shape and size can change also according to tube core；And through hole, through hole are located at graphene buffer layers body structure surface, For the pin by being connected with tube core.

Above-mentioned graphene buffer layers structure is described in detail with reference to Figure of description.

Although the present invention is described in more detail below with reference to accompanying drawings, which show being preferable to carry out for the present invention Example, it should be appreciated that those skilled in the art can change invention described herein and still realize the advantageous effects of the present invention. Therefore, description below is appreciated that for the widely known of those skilled in the art, and is not intended as the limit to the present invention System.

For clarity, whole features of practical embodiments are not described.In the following description, it is not described in detail known function And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments In hair, it is necessary to a large amount of implementation details are made to realize the specific objective of developer, such as according to relevant system or relevant business Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expended Time, but it is only to those skilled in the art routine work.

More specifically description is of the invention by way of example referring to the drawings in the following passage.Will according to following explanation and right Book is sought, advantages and features of the invention will become apparent from.It should be noted that accompanying drawing is using very simplified form and using non- Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.

The specific embodiment of above-mentioned graphene buffer layers structure is provided separately below, in order to understand above-mentioned encapsulating structure.

Fig. 1 is the schematic diagram of this graphene buffer layers structure, and its concrete shape may change according to actual conditions, It is only not necessarily cuboid.During device use, heat caused by tube core 2 itself is delivered to graphene by contact 5 and delayed Rush on Rotating fields 1, distributed heat using the thermal conductive resin of graphene buffer layers structure 1.Meanwhile when ambient temperature becomes , can will be fast because of deformational stress caused by temperature change using the good ductility of graphene buffer layers structure 1 itself during change Quick-release is put, and avoids the fracture failure for causing device.

Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies Within, then the present invention is also intended to comprising including these changes and modification.

Claims

A kind of 1. graphene buffer layers structure, it is characterised in that：

The graphene buffer layers structure wraps up tube core, but is not exclusively contacted with tube core fitting, but passes through contact and tube core Contact connection is carried out, the contact with die contact is respectively at the diverse location of buffer layer structure and directly connect with tube core Touch.
2. graphene buffer layers structure as claimed in claim 1, it is characterised in that the space that the graphene buffer layers are formed Body can be closing or non-close.
3. such as claim 1, the graphene buffer layers structure described in 2, it is characterised in that the graphene buffer layers structure has appearance Receive the through hole that the pin being connected with tube core passes through.
4. graphene buffer layers structure as claimed in claim 3, it is characterised in that the position of the through hole and quantity and buffering Tube core structure in layer is corresponding.
5. graphene buffer layers structure as claimed in claim 1, it is characterised in that the contact and the spacing phase of adjacent contacts Deng or it is unequal.
6. such as claim 1, the graphene buffer layers structure described in 5, it is characterised in that the contact is graphene buffer layers knot The extension of structure, tube core and graphene buffer layers structure are connected respectively, form a path.
7. graphene buffer layers structure as claimed in claim 1, it is characterised in that the graphene buffer layers structure can be made Used for the electrode of tube core.
8. graphene buffer layers structure as claimed in claim 1, it is characterised in that the graphene buffer layers structure can answer For in three-dimensional packaging technology or in non-three-dimensional packaging technology.