CN2932621Y - Encapsulating structure with top and bottom radiating fins - Google Patents
Encapsulating structure with top and bottom radiating fins Download PDFInfo
- Publication number
- CN2932621Y CN2932621Y CN 200620044459 CN200620044459U CN2932621Y CN 2932621 Y CN2932621 Y CN 2932621Y CN 200620044459 CN200620044459 CN 200620044459 CN 200620044459 U CN200620044459 U CN 200620044459U CN 2932621 Y CN2932621 Y CN 2932621Y
- Authority
- CN
- China
- Prior art keywords
- semiconductor chip
- fin
- utility
- welding materials
- scolder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The utility model provides a novel top-bottom double fin enclosing structure which spots welding materials on a wire rack, wherein a semiconductor chip is close to the welding materials and fixes the welding materials, and then on the upper surface of the semiconductor chip the welding materials are spotted, then a specially-produced metal bridge frame which has the heat dissipation function is placed on the top of the semiconductor chip and is enclosed with plastic to form a enclosing structure, wherein the semiconductor chip is in the middle, and the top and the bottom portion are all radiating fins. The utility model has the advantages that the utility model adds the approaches of top dissipating heat from the enclosing structure and provides a better heat dissipation characteristic for a high-power semiconductor device.
Description
Technical field
The utility model relates to the two fin encapsulating structures of a kind of top base, and it is good to specially refer to a kind of heat dissipation characteristics, the encapsulating structure of the two fin of high-power top base.
Background technology
In recent years, along with the miniaturization of various electronic products and the fast development of multifunction, semiconductor technology is also constantly to the high integration high-density development, and various light, thin, short, little encapsulating structures constantly are developed, and are meanwhile also more and more higher to the requirement of semiconductor active device.The semiconductor active device needs to bear more heavy current impact, produces bigger power simultaneously, will have better heat dispersion under hot environment.Present general product does not have heat sink design substantially on the market, perhaps only there is single fin, a large amount of heats that chip produces in time effectively can not be transmitted to the external world rapidly, therefore limit the increase of chip power greatly, can't satisfy the fast development of electronic product.The exploitation of the two fin encapsulating structures of top base makes encapsulating structure that the heat that chip produces is transmitted to the external world fast and effectively, and encapsulation volume is littler simultaneously.Its range of application will constantly be expanded because of its significant advantage, and the use amount in the coming years will significantly rise.
Summary of the invention
Main purpose of the present utility model is to provide a kind of novel top base two fin encapsulating structures, this structure is on a lead frame, scolder on the point, semiconductor chip is affixed on this scolder and fixes it, scolder on surface point above the semiconductor chip with a special metal crane span structure with heat sinking function, places above the semiconductor chip and with plastic packaging material to encapsulate again, between the formation semiconductor chip was placed in the middle, its top and bottom all were the encapsulating structures of fin.
The utility model has the advantages that, increased, improved the better heat dissipation characteristics of large power semiconductor device from the approach of encapsulation top heat radiation.Its special crane span structure is double as top fin when realizing the circuit turn-on function, and after heat produced from chip, directly crane span structure was given in conduction, because crane span structure is a metal material, good thermal conductivity is arranged, and heat directly can be passed to the external world rapidly.Compare with the product that the market is common, need be through the pilot process of plastic packaging colloid heat transfer.As everyone knows, the thermal conductivity of the thermal conductivity of metal and plastic packaging colloid has the difference of the order of magnitude, so the present invention has compared heat dispersion efficiently with traditional product.Owing to reduced the use amount of the plastic packaging colloid at top, neoteric encapsulating structure is more frivolous than traditional product, because its good heat dispersion, under identical condition, can carry more powerful chip, make neoteric encapsulating structure have fine heat radiation property, product is thinner, the advantage that power is higher.
Description of drawings
Accompanying drawing 1 is the utility model three-dimensional exploded view.
Accompanying drawing 2 is bottom heat radiating fin structure figure.
Accompanying drawing 3 is top heat radiating fin structure figure.
Accompanying drawing 4 is the finished product stereograms (comprising Fig. 4 a, Fig. 4 b) after the encapsulation.
Accompanying drawing 5 is finished product cross section structure figure.
Embodiment
See also shown in the accompanying drawing 1, the upper strata of semiconductor chip 30 is scolder 40, top fin 50 (the double weldering bridge of doing) successively, and the lower floor of semiconductor chip 30 is scolder 20, bottom fin (underframe) 10 successively; Finished product after welding is shown in accompanying drawing 4a, and accompanying drawing 4b is the dorsal view of accompanying drawing 4a.
See also shown in the accompanying drawing 5 visible its hierarchical structure of finished product sectional view.
Claims (2)
1, the two fin encapsulating structures of a kind of top base, it is characterized in that: on a lead frame, point has scolder, semiconductor chip is affixed on this scolder and fixes it, surface point has scolder above semiconductor chip again, with a special metal crane span structure with heat sinking function, places and also uses Plastic Package above the semiconductor chip, between the formation semiconductor chip was placed in the middle, its top and bottom all were the encapsulating structures of fin.
2, according to the two fin encapsulating structures of claims 1 described top base, it is characterized in that: the metal bridge formation with heat sinking function has the effect of Continuity signal simultaneously, and its structural design palpus and chip cooperate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620044459 CN2932621Y (en) | 2006-08-01 | 2006-08-01 | Encapsulating structure with top and bottom radiating fins |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200620044459 CN2932621Y (en) | 2006-08-01 | 2006-08-01 | Encapsulating structure with top and bottom radiating fins |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2932621Y true CN2932621Y (en) | 2007-08-08 |
Family
ID=38349114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200620044459 Expired - Lifetime CN2932621Y (en) | 2006-08-01 | 2006-08-01 | Encapsulating structure with top and bottom radiating fins |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2932621Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752329B (en) * | 2008-12-01 | 2012-02-29 | 万国半导体有限公司 | Top-side cooled semiconductor package with stacked interconnection plates and method |
-
2006
- 2006-08-01 CN CN 200620044459 patent/CN2932621Y/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752329B (en) * | 2008-12-01 | 2012-02-29 | 万国半导体有限公司 | Top-side cooled semiconductor package with stacked interconnection plates and method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20070808 |
|
| EXPY | Termination of patent right or utility model |