CN107527957A - Solar cell receiving light on one side, manufacturing method thereof and solar cell module - Google Patents
Solar cell receiving light on one side, manufacturing method thereof and solar cell module Download PDFInfo
- Publication number
- CN107527957A CN107527957A CN201610552875.1A CN201610552875A CN107527957A CN 107527957 A CN107527957 A CN 107527957A CN 201610552875 A CN201610552875 A CN 201610552875A CN 107527957 A CN107527957 A CN 107527957A
- Authority
- CN
- China
- Prior art keywords
- electrode
- passivation layer
- solar cell
- layer
- back side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 49
- 239000011267 electrode slurry Substances 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 28
- 238000005245 sintering Methods 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 239000004411 aluminium Substances 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 194
- 238000012545 processing Methods 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 238000010422 painting Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
A solar cell receiving light on one side, a manufacturing method thereof and a solar cell module. The cell includes a substrate, first and second passivation layers, a front electrode, and a back electrode. The substrate has a front surface and a back surface, the emitter layer is arranged on the front surface, and the back surface electric field layer is arranged on the back surface. The first and second passivation layers cover the front and back surfaces, respectively. The second passivation layer has a plurality of openings exposing a portion of the back surface field layer. The front electrode is located on the front surface. The back electrode is located on the back surface and comprises a plurality of first electrodes, a second electrode and a plurality of bus electrodes. The first electrodes are respectively arranged in the openings and contact with the back surface, the second electrodes cover the second passivation layer and correspondingly cover the range around the back surface, the second electrodes cover the first electrodes, the first electrodes and the second electrodes are made of different materials, and the bus electrodes are arranged at the back surface and contact with the second electrodes. The first electrode is made of a material with resistivity lower than that of the second electrode, so that the current conduction of the first electrode can be effectively improved, and the solar cell has high efficiency.
Description
Technical field
The invention relates to a kind of photoelectric conversion device, and in particular to a kind of solar cell of one side light
And its manufacture method.
Background technology
Current solar cell has one side incident type structure and two-sided incident type structure.Fig. 1 is refer to, it is to illustrate one
The diagrammatic cross-section of the two-sided incident type solar cell of kind tradition.The solar cell 100 of two-sided incident type mainly includes substrate
102nd, emitter layer 104, passivation layer 106, back surface field layer 108, passivation layer 110, first electrode 112 and second electrode 114.Substrate
102 include the first face 116 and the second face 118 relative to each other.First face 116 of substrate 102 can be roughened with the second face 118
Handle and there is coarse structure 120 and 122 respectively, to promote the efficiency of light absorption of solar cell 100.
Emitter layer 104 is configured in substrate 102 close to the position in the first face 116.Emitter layer 104 has not with substrate 102
Same is electrical.Passivation layer 106 is on the first face 116 and contacts emitter layer 104, to be passivated the first face 116 of substrate 102.The
One electrode 112 located at the top in the first face 116 of substrate 102, and first electrode 112 may pass through passivation layer 106 and with the first face
116 emitter layer 104 contacts, and then can be electrically connected.
Back surface field layer 108 is in substrate 102 close to the position in the second face 118.Back surface field layer 108 and substrate 102
It is electrical with identical.Passivation layer 110 is on the second face 118 and contacts back surface field layer 108, to be passivated the of substrate 102
Two faces 118.Second electrode 114 on the second face 118 of substrate 102, and second electrode 114 may pass through passivation layer 110 and
Contact, and then can be electrically connected with the back surface field layer 108 in the second face 118.
In general, the efficiency of the solar cell of two-sided incident type is high compared with the solar cell of one side incident type, ought to
Compared with being paid attention to.So, because the module architectures exploitation of previous block business is to be directed to one side incident type solar cell, along with double
The relatively low therefore current research and development of the demand degree of face incident type solar cell are still based on one side incident type solar cell.
Fig. 2 is refer to, it is to illustrate a kind of diagrammatic cross-section of traditional one side incident type solar cell.One side incident type
Solar cell 200 mainly comprising substrate 202, emitter layer 204, passivation layer 206, back surface field layer 208, passivation layer 210, the
One electrode 212 and second electrode 214.Substrate 202 includes the first face 216 and the second face 218 relative to each other.The of substrate 202
Simultaneously 216 equally can it is roughened processing and there is coarse structure 220.
Emitter layer 204 is configured in substrate 202 close to the position in the first face 216.Emitter layer 204 has not with substrate 202
Same is electrical.Passivation layer 206 is located on the first face 216 and contacts emitter layer 204.First electrode 212 is located at the first of substrate 202
The top in face 216, and first electrode 212 may pass through passivation layer 206 and be contacted with the emitter layer 204 in the first face 216, and then can shape
Into electric connection.
Back surface field layer 208 is in substrate 202 close to the position in the second face 218.Back surface field layer 208 and substrate 202
It is electrical with identical.Passivation layer 210 is on the second face 218 and contacts back surface field layer 208, to be passivated the of substrate 202
Two faces 218.Multiple perforates 222 for exposing back surface field layer 208 are equipped with passivation layer 210, wherein these perforates 222 are profits
Formed with laser beam perforation processing procedure ablation passivation layer 210.These perforates 222 expose the back surface field layer 208 of part.Second electricity
Pole 214 is covered on passivation layer 210 on the second face 218 of substrate 202, and is arranged on these perforates of passivation layer 210
Contact, and then be electrically connected in 222 and with back surface field layer 208.
When making solar cell 200, due to being to form perforate using laser beam perforation processing procedure ablation passivation layer 210
222, and the second face 218 of the easy wounded substrate 202 of laser, therefore cause under the open-circuit voltage (Voc) of solar cell 200
Drop.In addition, the equipment of laser beam perforation processing procedure is expensive, and it is more time-consuming, and cause the increase of processing procedure cost, production capacity declines.
The content of the invention
Therefore, a purpose of the invention be exactly provide a kind of solar cell of one side light and its manufacture method with too
Positive energy battery module, its backplate are included through the first electrode of passivation layer and covering in this passivation layer and at least partly
First electrode on second electrode.First electrode can use resistivity to be less than the material of second electrode, therefore first electrode
Electric current conduction can obtain effective lifting, and cause solar cell to have high efficiency.In addition, the electric current collection and light of second electrode
Reflection can make solar cell have high fill factor (fill factor, FF) and high short circuit current (Jsc).
It is another object of the present invention to providing a kind of solar cell and its manufacture method and solar energy of one side light
Battery module, the first electrode of its backplate have the composition that passivation layer can be burnt when sintering relative to second electrode, because
This first electrode can be arranged in passivation layer using sintering processing.Compared to conventional laser perforation means, sintering processing can be reduced
Damage to substrate back, and the open-circuit voltage of solar cell can be lifted.In addition, the use of sintering processing can more reduce processing procedure
Cost, improve production capacity.
According to the above-mentioned purpose of the present invention, a kind of solar cell of one side light is proposed.The solar energy of this one side light
Battery bag is containing substrate, the first passivation layer and the second passivation layer, front electrode and backplate.Substrate has front and the back side,
Wherein substrate includes emitter layer and is located at the back side located at front and back surface field layer.First passivation layer and the second passivation layer are distinguished
Covering front and the back side, wherein the second passivation layer has the back surface field layer that multiple perforates expose part.Front electrode is located at
On front.Backplate is located on the back side, and backplate includes multiple first electrodes, a second electrode and multiple electricity that conflux
Pole, wherein these first electrodes are respectively provided in perforate and contact the back side, and second electrode is covered on the second passivation layer and correspondingly
Cover the scope of back periphery, second electrode covering first electrode, the material of the multiple first electrode and the second electrode
Difference, the multiple bus electrode are arranged at the back side and contacted with the second electrode.
According to one embodiment of the invention, above-mentioned multiple first electrodes have relative to the second electrode can when sintering
Burn the composition of the second passivation layer.
According to one embodiment of the invention, the material of above-mentioned first electrode includes the group being made up of silver with copper, and second
The material of electrode includes the group being made up of aluminium and copper.
According to one embodiment of the invention, above-mentioned perforate is point-like, dotted line shape or linear.
According to one embodiment of the invention, each above-mentioned first electrode is completely covered by second electrode or part is covered
Lid.
According to the above-mentioned purpose of the present invention, a kind of solar module is separately proposed.This solar module includes upper
Plate, lower plate, the solar cell of one side light described above and an at least encapsulating material layer.The solar cell of one side light
Between upper plate and lower plate.Encapsulating material layer is between upper plate and lower plate, by the solar cell and upper plate of one side light
Combined with lower plate.
According to the above-mentioned purpose of the present invention, a kind of manufacture method of the solar cell of one side light is more proposed.Side herein
In method, there is provided substrate, substrate have front and the back side.Emitter layer is formed with back surface field layer respectively positioned at front and the back side.Shape
Front and the back side are covered each by into the first passivation layer and the second passivation layer.Front electrode is formed with backplate respectively positioned at front
With on the back side, backplate includes multiple first electrodes, a second electrode and multiple bus electrodes.Form this multiple first electricity
Included when pole, second electrode and multiple bus electrodes：Multiple first electrode slurries are provided with multiple bus electrode slurries in second
On passivation layer, wherein respectively the first electrode slurry is different from the area that respectively the bus electrode slurry is covered each other.There is provided second
Electrode slurry on the second passivation layer, the material of this multiple second electrode slurry be different from the first electrode slurry with it is the multiple
The material of bus electrode slurry, and second electrode slurry covers this multiple first electrode slurry, the second electrode slurry is connected to
Respectively locate around the bus electrode slurry, second electrode slurry correspondingly covers the scope of back periphery.Using a sintering process,
This multiple first electrode slurry, second electrode slurry and multiple bus electrode slurries is set to form aforesaid plurality of first electricity respectively
Pole, second electrode and multiple bus electrodes, wherein this multiple first electrode slurry burn second with multiple bus electrode slurries
Passivation layer contacts the back side after forming aforesaid plurality of perforate respectively, second is passivated by this between the second electrode slurry and the back side
Layer separates and the contactless back side.
According to one embodiment of the invention, above-mentioned perforate is point-like, dotted line shape or linear.
According to one embodiment of the invention, the material of above-mentioned first electrode includes the group being made up of silver with copper, and second
The material of electrode includes the group being made up of aluminium and copper.
According to one embodiment of the invention, each above-mentioned first electrode is completely covered by second electrode or part is covered
Lid.
According to one embodiment of the invention, above-mentioned multiple first electrode slurries have can burn second passivation layer into
Point, the second electrode slurry does not have or had the less composition that can burn second passivation layer.
Brief description of the drawings
For above and other purpose, feature, advantage and the embodiment of the present invention can be become apparent, appended accompanying drawing is said
It is bright as follows：
Fig. 1 is the diagrammatic cross-section for illustrating a kind of two-sided incident type solar cell of tradition；
Fig. 2 is to illustrate a kind of diagrammatic cross-section of traditional one side incident type solar cell；
Fig. 3 is the diagrammatic cross-section for illustrating a kind of solar module according to one embodiment of the present invention；
Fig. 4 is the section signal for the solar cell for illustrating a kind of one side light according to one embodiment of the present invention
Figure；
Fig. 5 A are the second passivation of the solar cell for illustrating a kind of one side light according to one embodiment of the present invention
The distributed intention of perforate in layer；
Fig. 5 B are the second passivation of the sun energy battery for illustrating a kind of too one side light according to one embodiment of the present invention
The distributed intention of perforate in layer；
Fig. 5 C are points of the perforate for the solar cell for illustrating a kind of one side light according to one embodiment of the present invention
Cloth is intended to；
Fig. 6 is the section signal for the solar cell for illustrating a kind of one side light according to one embodiment of the present invention
Figure；And
Fig. 7 is the manufacturing process for the solar cell for illustrating a kind of one side light according to one embodiment of the present invention
Figure.
Embodiment
Fig. 3 is refer to, it is that the section for illustrating a kind of solar module according to one embodiment of the present invention shows
It is intended to.In the present embodiment, solar module 300 mainly comprising the solar cell 302 of one side light, upper plate 304,
Lower plate 306 and one or more encapsulating material layers, such as the encapsulating material layer of ethylene-vinyl acetate copolymer (EVA)
308 and 310.
As shown in figure 3, in solar module 300, the solar cell 302 of one side light is located in lower plate 306,
And under upper plate 304.Therefore, upper plate 304 is on lower plate 306, and the solar cell 302 of one side light is located at down
Between plate 306 and upper plate 304.In addition, two layers of encapsulating material layer 308 and 310 are separately positioned on upper plate 304 and one side light
Between solar cell 302 and the solar cell 302 of lower plate 306 and one side light.Pass through the program of high-temperature laminating, envelope
Package material layer 308 and 310 is available for when molten state by the solar cell 302 of one side light and lower plate 306 and the knot of upper plate 304
Close.
Fig. 4 is refer to, it is the solar cell for illustrating a kind of one side light according to one embodiment of the present invention
Diagrammatic cross-section.In certain embodiments, the solar cell 302 of one side light can mainly include substrate 312, the first passivation layer
314th, the second passivation layer 316, front electrode 318 and backplate 320.
Substrate 312 has front 326 and the back side 328, and front 326 is with the back side 328 respectively positioned at relative the two of substrate 312
Side.Substrate 312 can be the first conductivity type.In some instances, the material of substrate 312 can be semi-conducting material, such as silicon.One
In a little illustrative examples, roughening treatment can be carried out to the front 326 of substrate 312, and make the front 326 of substrate 312 that there is coarse knot
Structure 330, such as the coarse structure of the pyramid pattern of single-crystal wafer, whereby promote one side light solar cell 302 for
The absorption efficiency of incident light.
Substrate 312 includes emitter layer 332 and back surface field layer 334.Emitter layer 332 can be comprehensively in substrate 312
And close to the position in front 326.Emitter layer 332 can be the doped layer in substrate 312, and with the different from substrate 312
Two conductivity types.For example, when substrate 312 be electrically N-type when, emitter layer 332 can be p-type doped layer, such as boron (B), aluminium
(Al), gallium (Ga), indium (In) or thallium (Tl) doped layer.Back surface field layer 334 is configured in substrate 312 and close to the back side 328
Position.Back surface field layer 334 has and the first conductivity type of identical of substrate 312.For example, when the electrical of substrate 312 is N-type
When, back surface field layer 334 can be the n-type doping layer in formation overleaf 328, such as phosphorus doping layer.
First passivation layer 314 can be covered on the front 326 of substrate 312 and contact emitter layer 332, with passivation front 326.
In some instances, the material of the first passivation layer 314 can be silica, silicon nitride or aluminum oxide, and the first passivation layer 314 can be
Single layer structure or multilayer lamination structure.Second passivation layer 316 can then be covered on the back side 328 of substrate 312 and contact back side electricity
Field layer 334, to be passivated the back side 328.The material of second passivation layer 316 may be, for example, silica, silicon nitride or aluminum oxide, and second
Passivation layer 316 equally can be single layer structure or multilayer lamination structure.Second passivation layer 316 has several perforates 336, for the back side
A part for electrode 320 is disposed therein, and these perforates 336 expose the back surface field of part through the second passivation layer 316
Layer 334.In addition, the solar cell 302 of one side light can include several bus electrodes 340, and the second passivation layer 316 can more have
There are several perforates 338, for these spread configurations of bus electrode 340 wherein.The back side of the solar cell 302 of one side light
The perforate 336 in the second passivation layer 316 on 328 can have a variety of patterns and arrangement.In some instances, perforate 336 can be point
Shape, dotted line shape or linear.
Please also refer to Fig. 5 A, Fig. 5 B and Fig. 5 C, it is to illustrate three kinds of sun according to one embodiment of the present invention respectively
The distributed intention of perforate in second passivation layer of energy battery.As shown in Figure 5A, the second passivation layer 316a supplies bus electrode 340
The perforate 338a of setting has three, and these three perforates 338a is almost parallel to be arranged in the second passivation layer 316a.In addition, perforate
336a is in point-like, and is arranged in array way in the second passivation layer 316a.In some other examples, the perforate 336a of point-like
It can be arranged with the pattern of triangular crystal lattice or rectangle lattice.
As shown in Figure 5 B, the perforate 338b that the second passivation layer 316b is set for bus electrode 340 has three, these three perforates
338b is equally almost parallel to be arranged in the second passivation layer 316b.In addition, perforate 336b is in dotted line shape.In such example
In, these perforates 336b can be arranged in the second passivation layer 316b in a manner of upper and lower two row interlock, and partial perforate 336b
Perforate 338b can be passed across.
As shown in Figure 5 C, the perforate 338c that the second passivation layer 316c is set for bus electrode 340 has three, these three perforates
338c is equally almost parallel to be arranged in the second passivation layer 316c.In addition, perforate 336c is linearly.In such example
In, these perforates 336c can be arranged in the second passivation layer 316c in a manner of essence is parallel, and perforate 336c can be passed across out
Hole 338c.
Front electrode 318 is arranged on the top of front 326 of substrate 312, and on the first passivation layer 314.Front electrode
318 may pass through the first passivation layer 314 and be contacted with the emitter layer 332 in front 326, and then be electrically connected.Front electrode 318
Material can include silver, aluminium or aerdentalloy.
Backplate 320 is arranged on the back side 328 of substrate 312.Referring once again to Fig. 4, in some instances, back side electricity
Pole 320 can include multiple first electrodes 322 and a second electrode 324.These first electrodes 322 are separately positioned on the second passivation
In the perforate 336 of layer 316, and the back side 328 for the substrate 312 that can be exposed with perforate 336 contacts, you can with the back side 328
Back surface field layer 334 is contacted and is electrically connected with.Second electrode 324 is then covered on the second passivation layer 316, and covers the back side
Scope around 328, and second electrode 324 is covered in first electrode 322, and being contacted with first electrode 322, the is collected with profit
The electric current that one electrode 322 transmits.In some instances, as shown in figure 4, each first electrode 322 is complete by second electrode 324
Covering.In addition, bus electrode 340 is not completely covered in second electrode 324, and the periphery for touching bus electrode 340 is only covered,
It is connected with sharp bus electrode 340 with conductive strips (not illustrating).In other examples, each first electrode 322 is by the second electricity
The local complexity of pole 324.In some illustrative examples, in the case of perforate 338, perforate 336 is in the second passivation layer 316
Aperture opening ratio at about 3% to about 4%, the solar cell 302 of one side light can obtain preferable efficiency.
Overleaf in electrode 320, first electrode 322 is mainly configured so that the electric current in back surface field layer 334 to be passed to
Second electrode 324, and second electrode 324 is then collecting these electric currents.In some instances, first electrode 322 is relative to
Two electrodes 324 have the composition that the second passivation layer 316 can be burnt when sintering, with sharp first electrode 322 in the second passivation layer 316
Middle formation perforate 336 is simultaneously arranged in these perforates 336.In some illustrative examples, first electrode 322 and second electrode 324
Material it is different.For example, the material of first electrode 322 includes the group being made up of silver with copper, the material of second electrode 324 includes
The group being made up of aluminium and copper.The example of aluminium is included in material of the material of first electrode 322 comprising silver and second electrode 324
In, because silver has a higher conductance, therefore can motor current conduction efficiency, and the solar-electricity of one side light can be lifted
The efficiency in pond 302；And aluminium collects electric current and reflected light and more silver-colored cheap, therefore one side light can be made at lower cost
Solar cell 302 has high fill factor and high short circuit current.In addition, in various embodiments of the present invention, conflux electricity
The material of pole 340 can be identical with the material of the first electrode 322, but can also be different, and this can be selected according to different demands.
Further, since first electrode 322 has relative to second electrode 324 can burn the second passivation layer 316 when sintering
Composition, therefore first electrode 322 is arranged in the second passivation layer 316 using sintering processing.Due to sintering processing far beyond
Damage of the conventional laser perforation means to the back side 328 of substrate 312 is small, therefore can lift the solar cell 302 of one side light
Open-circuit voltage.Moreover, perforate can reduce processing procedure cost in the second passivation layer 316 with sintering processing, production capacity is improved.
Fig. 6 is refer to, it is the solar cell for illustrating a kind of one side light according to one embodiment of the present invention
Diagrammatic cross-section.In the present embodiment, the solar cell 302a of one side light framework and above-mentioned one side light be too
It is positive can battery 302 framework it is roughly the same, difference therebetween essentially consists in the solar cell 302a of one side light base
Plate 312a further includes multiple selective back surface field (S-BSF) layers 342 and is located at the back side 328.In some instances, these selectivity
Back surface field layer 342 is located at relative two sides of back surface field layer 334, and these with first electrode 322 and bus electrode 340 respectively
Selective back surface field layer 322 corresponds respectively to first electrode 322 and bus electrode 340.
Please with reference to Fig. 7 and Fig. 4, wherein Fig. 7 is to illustrate a kind of solar-electricity according to one embodiment of the present invention
The manufacturing flow chart in pond.In the present embodiment, when making the solar cell 302 of one side light as shown in Figure 4, can first carry
Substrate 312, wherein substrate 312 have front 326 relative to each other and the back side 328.Substrate 312 can be the first conductivity type, and
The material of substrate 312 can be semi-conducting material, such as silicon.In some instances, the front 326 of substrate 312 can be roughened
Processing, and make the front 326 of substrate 312 that there is coarse structure 330, such as the coarse structure of pyramid pattern.
Next, step 402 can be carried out, in a manner of being for example doped processing procedure to the front 326 of substrate 312, and
The emitter layer 332 of the second conductivity type is formed on front 326.This emitter layer 332 is extended on whole front 326, in practice,
Emitter layer 332 is in substrate 312 and close to the position in front 326.Second conductivity type is different from the first conduction of substrate 312
Type, and the first conductivity type is N-type, the second conductivity type is p-type.Now, emitter layer 332 can be p-type doped layer, such as boron (B), aluminium
(Al), gallium (Ga), indium (In) or thallium (Tl) doped layer.
Then, step 404 can be carried out, in a manner of being for example doped processing procedure to the back side 328 of substrate 312, and is being carried on the back
The back surface field layer 334 of the first conductivity type is formed on face 328.This back surface field layer 334 is extended on the whole back side 328,
In practice, back surface field layer 334 is configured in substrate 312 and close to the position at the back side 328.In some illustrative examples, the
One conductivity type is N-type, and can use such as POCl3 (POCl3) back side 328 is doped, thus back surface field layer
334 can be phosphorus doping layer.Fig. 7 illustrative example is the order to be initially formed emitter layer 332, re-form back surface field layer 334
Illustrate, so the present invention is not limited thereto, can also be initially formed back surface field layer 334, re-form emitter layer 332.
Fig. 6 is refer to, in some other examples, can form the second passivation layer before follow-up step 408 is carried out
Before 316, present embodiment can more reuse the mode that processing procedure is doped to the back side 328, and form multiple selective back sides
Electric field layer 342 is in the back side 328 of substrate 312.These selective back surface field layers 342 and the backplate 320 that is subsequently formed
First electrode 322 and bus electrode 340 are respectively positioned at two sides, and these selective back surface fields relatively of back surface field layer 334
Layer corresponds respectively to first electrode 332 and bus electrode 340.
After completing emitter layer 332 and back surface field layer 334, step 406 can be carried out, to form the using such as deposition technique
One passivation layer 314 is covered on the front 326 of substrate 312 and contacts emitter layer 332, so as to passivation front 326.First passivation layer
314 material can be silica, silicon nitride or aluminum oxide, and the first passivation layer 314 can be single layer structure or multilayer lamination structure.
Next, step 408 can be carried out, substrate 312 is covered in form the second passivation layer 316 using such as deposition technique
The back side 328 on and contact back surface field layer 334, so as to being passivated the back side 328.The material of second passivation layer 316 can be silica,
Silicon nitride or aluminum oxide, and the second passivation layer 316 can be single layer structure or multilayer lamination structure.Fig. 7 illustrative example is with elder generation
The order for form the first passivation layer 314, re-forming the second passivation layer 316 illustrates, and so the present invention is not limited thereto, also can be first
Form the second passivation layer 316, re-form the first passivation layer 314, or form the first passivation layer 314 and the second passivation layer simultaneously
316。
In some instances,, can be to the second passivation layer 316 after the deposition for completing the second passivation layer 316 in step 408
Such as laser beam drilling processing procedure is carried out, multiple runs through the second passivation layer 316 so as to being formed in the predeterminated position of the second passivation layer 316
Perforate 336, and expose the partial rear electric field layer 334 at the back side 328 for being formed at substrate 312.In second passivation layer 316
Perforate 336 can have an a variety of patterns and arrangement, the pattern of perforate 336 with arrangement such as the explanation of above-mentioned embodiment, such as
Kenel and arrangement shown in Fig. 5 A to Fig. 5 C, are repeated no more in this.Such as the explanation of above-mentioned embodiment, the second passivation layer 316
Can more have several perforates 338, wherein these perforates 338 are also using laser beam drilling technology, or using lithography skill
Art makes.
In such example, then, step 410 can be carried out, be located at the second passivation layer 316 to form backplate 320
Above and insert in perforate 336., can be first with such as deposition or printing side when forming backplate 320 in some illustrative examples
Formula, such as screen painting mode, the multiple first electrodes 322 for forming backplate 320 are respectively filled in the second passivation layer 316
In perforate 336, such as deposition or mode of printing, such as screen painting mode are recycled, forms the second electrode of backplate 320
324 the second passivation layers 316 of covering are simultaneously completely covered or local complexity is in each first electrode 322.Therefore, first electrode
The 322 back surface field layers 334 that can be exposed with perforate 336 contact, and second electrode 324 can contact with each first electrode 322,
The electric current transmitted with profit collection first electrode 322.When forming first electrode 322 with second electrode 324 using screen painting mode,
First electrode 322 and second electrode 324 can be sintered again.In some instances, as shown in figure 4, second electrode 324
These first electrodes 322 are completely covered.In addition, bus electrode 340 is not completely covered in second electrode 324, and only cover remittance
The periphery of electrode 340 is flowed, is connected with sharp bus electrode 340 with conductive strips (not illustrating).
In some illustrative examples, first electrode 322 is different from the material of second electrode 324.For example, first electrode 322
Material include the group being made up of silver with copper, the material of second electrode 324 includes the group being made up of aluminium and copper.In the first electricity
The material of pole 322 includes silver and the material of second electrode 324 is included in the example of aluminium, because silver has higher conductance, because
This can motor current conduction efficiency, and the efficiency of the solar cell 302 of one side light can be lifted；And aluminium collect electric current with
Reflected light and more silver-colored cheap, therefore can make solar cell that there is high fill factor and high short circuit current at lower cost.
Then, step 412 can be carried out, using such as deposition or mode of printing, such as screen painting mode, to form front
Electrode 318 is substantially completed the solar cell of one side light on the first passivation layer 314 above the front 326 of substrate 312
302 making.Front electrode 318 may pass through the first passivation layer 314 and be contacted with the emitter layer 332 in front 326, and then form electricity
Property connection.The material of front electrode 318 can include silver, aluminium or aerdentalloy.Fig. 7 illustrative example is to be initially formed back side electricity
Pole 320, the order for re-forming front electrode 318 illustrate, and so the present invention is not limited thereto, can also be initially formed front electrode
318th, backplate 320 is re-formed.
However, present embodiment can not also use laser perforation techniques to form perforate 336, and perforate can be formed simultaneously
336 with the first electrode 322 of backplate 320, you can form perforate 336 and first electrode 322 simultaneously in step 410.
In some examples, the composition of first electrode 322 is different from the composition of second electrode 324.In addition, first electrode 322 is relative to
Two electrodes 324 have the composition that the second passivation layer 316 can be burnt when sintering.In some illustrative examples, first electrode is formed
322 with second electrode 324 when, provide multiple first electrode slurries and multiple bus electrodes using such as screen painting mode and starch
Expect on the second passivation layer 316, wherein respectively the first electrode slurry with area that respectively the bus electrode slurry is covered each other not
Together, these first electrode slurries have the composition that can burn the second passivation layer 316 with bus electrode slurry.It is next, available
Such as screen painting mode provides second electrode slurry on the second passivation layer 316, the material of second electrode slurry is different from the
The material of one electrode slurry and bus electrode slurry, and this second electrode slurry is without can burn the second passivation layer 316
Composition compares the first electrode slurry and has a less composition that can burn the second passivation layer 316, and second electrode slurry covers
Foregoing first electrode slurry, the second electrode slurry is connected to respectively to be located around the bus electrode slurry, second electrode slurry
The corresponding scope covered around the back side 328.Then, using sintering process, first electrode slurry, second electrode slurry are made with converging
Stream electrode slurry forms first electrode 322, second electrode 324 and bus electrode 340 respectively, and wherein first electrode slurry is with confluxing
Electrode slurry burns the second passivation layer 316 and contacts the back side 328 after forming perforate 336,338 respectively, the second electrode slurry
Separated and the contactless back side 328 by second passivation layer 316 between the back side 328.
First electrode slurry due to forming first electrode 322 has and can burn the composition of the second passivation layer 316, forms the
The second electrode slurry of two electrodes 324 does not have the composition that can burn the second passivation layer 316 or compares first electrode slurry tool
There is the less composition that can burn the second passivation layer 316, therefore during sintering process, it is blunt that first electrode 322 can be arranged in second
Change in layer 316, and second electrode 324 can't burn the second passivation layer 316.Because sintering processing is far beyond conventional laser perforation side
Damage of the formula to the back side 328 of substrate 312 is small, therefore can lift the open-circuit voltage of the solar cell 302 of one side light.And
And perforate can reduce processing procedure cost in the second passivation layer 316 with sintering processing, production capacity is improved.
From above-mentioned embodiment, an advantage of the invention is exactly the solar cell because one side light of the present invention
Backplate include through the first electrode of passivation layer and covering in this passivation layer and at least part of first electrode
Second electrode.First electrode can use resistivity less than the material of second electrode, therefore the electric current conduction of first electrode can obtain
Effectively lifting, and cause solar cell that there is high efficiency.In addition, the electric current collection of second electrode can make solar energy with light reflection
Battery has high fill factor and high short circuit current.
From above-mentioned embodiment, another advantage of the invention is exactly the solar-electricity because one side light of the present invention
The first electrode of the backplate in pond has the composition that passivation layer can be burnt when sintering, therefore the first electricity relative to second electrode
Pole can be arranged in passivation layer using sintering processing.Compared to conventional laser perforation means, sintering processing can be reduced to be carried on the back to substrate
The damage in face, and the open-circuit voltage of solar cell can be lifted.In addition, the use of sintering processing can more reduce processing procedure cost, carry
High production capacity.
Although the present invention is disclosed above with embodiment, so it is not limited to the present invention, any in this technical field
Middle tool usually intellectual, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations, therefore this hair
Bright protection domain is worked as to be defined depending on the scope of which is defined in the appended claims.
Claims (11)
1. a kind of solar cell of one side light, it is characterised in that include：
One substrate, there is a front and a back side, the wherein substrate to be located at the front and a back surface field comprising an emitter layer
Layer is located at the back side；
One first passivation layer and one second passivation layer, are covered each by the front and the back side, and wherein second passivation layer has more
Individual perforate exposes the back surface field layer of part；
One front electrode, on the front；And
One backplate, on the back side, the backplate includes multiple first electrodes, a second electrode and multiple confluxed
Electrode, wherein the multiple first electrode is respectively provided in the multiple perforate and contacts the back side, the second electrode is covered in
The scope of the back periphery is covered on second passivation layer and correspondingly, the second electrode covers the multiple first electrode, institute
It is different from the material of the second electrode to state multiple first electrodes, the multiple bus electrode be arranged at the back side and with this
Second electrode contacts.
2. the solar cell of one side light according to claim 1, it is characterised in that the multiple first electrode is relative to this
Second electrode has the composition that second passivation layer can be burnt when sintering.
3. the solar cell of one side light according to claim 1, it is characterised in that the material bag of the multiple first electrode
Containing the group being made up of silver with copper, the material of the second electrode includes the group being made up of aluminium and copper.
4. the solar cell of one side light according to claim 1, it is characterised in that the multiple perforate is point-like, dotted line
Shape is linear.
5. the solar cell of one side light according to claim 1, it is characterised in that each described first electrode by this
Two electrodes are completely covered or local complexity.
6. a kind of solar module, it is characterised in that include：
One upper plate；
One lower plate；
Just like the solar cell of the one side light described in any one of Claims 1 to 5 claim, located at the upper plate with being somebody's turn to do
Between lower plate；And
An at least encapsulating material layer, between the upper plate and the lower plate, by the solar cell of the one side light and the upper plate
Combined with the lower plate.
7. a kind of manufacture method of the solar cell of one side light, it is characterised in that include：
A substrate is provided, the substrate has a front and a back side；
An emitter layer and a back surface field layer are formed respectively positioned at the front and the back side；
Form one first passivation layer and one second passivation layer is covered each by the front and the back side；And
A front electrode and a backplate are formed respectively on the front and the back side, the backplate includes multiple first
Electrode, a second electrode and multiple bus electrodes, wherein forming the multiple first electrode, the second electrode and the multiple
Included during bus electrode：
Multiple first electrode slurries and multiple bus electrode slurries are provided on second passivation layer, wherein respectively the first electrode is starched
Material is different from the area that respectively the bus electrode slurry is covered each other；
A second electrode slurry is provided on second passivation layer, the material of the multiple first electrode slurry be different from this second
The material of electrode slurry and the multiple bus electrode slurry, and the second electrode slurry covers the multiple first electrode slurry
Material, the second electrode slurry is connected to respectively to be located around the bus electrode slurry, and the second electrode slurry correspondingly covers the back of the body
Scope around face；And
Using a sintering process, make the multiple first electrode slurry, the second electrode slurry and the multiple bus electrode
Slurry forms the multiple first electrode, the second electrode and the multiple bus electrode respectively, wherein the multiple first
Electrode slurry is burnt after second passivation layer forms the multiple perforate respectively with the multiple bus electrode slurry contacts this
The back side, separated and the contactless back side by second passivation layer between the second electrode slurry and the back side.
8. the manufacture method of the solar cell of one side light according to claim 7, it is characterised in that the multiple first electricity
Pole slurry has and can burn the composition of second passivation layer, the second electrode slurry do not have or with it is less can burn this second
The composition of passivation layer.
9. the manufacture method of the solar cell of one side light according to claim 7, it is characterised in that the multiple first electricity
The material of pole includes the group being made up of silver with copper, and the material of the second electrode includes the group being made up of aluminium and copper.
10. the manufacture method of the solar cell of one side light according to claim 7, it is characterised in that each described
One electrode is completely covered or local complexity by the second electrode.
11. the manufacture method of the solar cell of one side light according to claim 7, it is characterised in that the multiple perforate
For point-like, dotted line shape or linear.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105119324 | 2016-06-20 | ||
| TW105119324A TWI626755B (en) | 2016-06-20 | 2016-06-20 | Single-sided solar cell, method for manufacturing the same and solar cell module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107527957A true CN107527957A (en) | 2017-12-29 |
Family
ID=60748458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610552875.1A Pending CN107527957A (en) | 2016-06-20 | 2016-07-14 | Solar cell receiving light on one side, manufacturing method thereof and solar cell module |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107527957A (en) |
| TW (1) | TWI626755B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112542530A (en) * | 2020-12-01 | 2021-03-23 | 浙江晶科能源有限公司 | Photovoltaic cell and preparation method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102842638A (en) * | 2011-06-21 | 2012-12-26 | 新日光能源科技股份有限公司 | Solar cell and manufacturing method thereof |
| CN103208558A (en) * | 2012-01-16 | 2013-07-17 | E.I.内穆尔杜邦公司 | A Solar Cell Back Side Electrode |
| CN103403879A (en) * | 2010-09-21 | 2013-11-20 | 株式会社Pi技术研究所 | Polyimide resin composition for use in forming reverse reflecting layer in photovoltaic cell and method of forming reverse reflecting layer in photovoltaic cell used therewith |
| CN103915514A (en) * | 2013-01-08 | 2014-07-09 | 茂迪股份有限公司 | Solar cell and module thereof |
| CN103928537A (en) * | 2013-01-16 | 2014-07-16 | 茂迪股份有限公司 | Solar cell, module thereof and manufacturing method thereof |
| CN104137274A (en) * | 2012-02-28 | 2014-11-05 | 京瓷株式会社 | Conductive paste for solar cell electrodes, solar cell, and method for manufacturing solar cell |
| CN104201150A (en) * | 2014-09-05 | 2014-12-10 | 浙江晶科能源有限公司 | Method for improving PERC (passivated emitter rear contact) battery back slotting contact |
| CN105118874A (en) * | 2015-09-23 | 2015-12-02 | 中利腾晖光伏科技有限公司 | Crystalline silicon solar cell and manufacture method thereof |
| CN105470316A (en) * | 2015-12-09 | 2016-04-06 | 合肥海润光伏科技有限公司 | Back point contact crystalline silicon solar cell and manufacturing method therefor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130192670A1 (en) * | 2011-08-11 | 2013-08-01 | E I Du Pont De Nemours And Company | Aluminum paste and use thereof in the production of passivated emitter and rear contact silicon solar cells |
| TWI492402B (en) * | 2013-06-05 | 2015-07-11 | Motech Ind Inc | Solar cell and module comprising the same |
| TWI496303B (en) * | 2013-06-11 | 2015-08-11 | Motech Ind Inc | Solar cell, method for manufacturing the same and solar cell module |
-
2016
- 2016-06-20 TW TW105119324A patent/TWI626755B/en active
- 2016-07-14 CN CN201610552875.1A patent/CN107527957A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103403879A (en) * | 2010-09-21 | 2013-11-20 | 株式会社Pi技术研究所 | Polyimide resin composition for use in forming reverse reflecting layer in photovoltaic cell and method of forming reverse reflecting layer in photovoltaic cell used therewith |
| CN102842638A (en) * | 2011-06-21 | 2012-12-26 | 新日光能源科技股份有限公司 | Solar cell and manufacturing method thereof |
| CN103208558A (en) * | 2012-01-16 | 2013-07-17 | E.I.内穆尔杜邦公司 | A Solar Cell Back Side Electrode |
| CN104137274A (en) * | 2012-02-28 | 2014-11-05 | 京瓷株式会社 | Conductive paste for solar cell electrodes, solar cell, and method for manufacturing solar cell |
| CN103915514A (en) * | 2013-01-08 | 2014-07-09 | 茂迪股份有限公司 | Solar cell and module thereof |
| CN103928537A (en) * | 2013-01-16 | 2014-07-16 | 茂迪股份有限公司 | Solar cell, module thereof and manufacturing method thereof |
| CN104201150A (en) * | 2014-09-05 | 2014-12-10 | 浙江晶科能源有限公司 | Method for improving PERC (passivated emitter rear contact) battery back slotting contact |
| CN105118874A (en) * | 2015-09-23 | 2015-12-02 | 中利腾晖光伏科技有限公司 | Crystalline silicon solar cell and manufacture method thereof |
| CN105470316A (en) * | 2015-12-09 | 2016-04-06 | 合肥海润光伏科技有限公司 | Back point contact crystalline silicon solar cell and manufacturing method therefor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112542530A (en) * | 2020-12-01 | 2021-03-23 | 浙江晶科能源有限公司 | Photovoltaic cell and preparation method thereof |
| CN112542530B (en) * | 2020-12-01 | 2024-03-08 | 浙江晶科能源有限公司 | Photovoltaic cell and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI626755B (en) | 2018-06-11 |
| TW201801332A (en) | 2018-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110828583B (en) | Crystalline silicon solar cell with locally passivated and contacted front surface and preparation method thereof | |
| JP5524978B2 (en) | Solar cell and manufacturing method thereof | |
| CN105917472B (en) | High-efficiency solar panel | |
| US9960302B1 (en) | Cascaded photovoltaic structures with interdigitated back contacts | |
| JP2009529236A (en) | Thin film solar cell and method for manufacturing the same | |
| US20090014063A1 (en) | Method for production of a single-sided contact solar cell and single-sided contact solar cell | |
| CN102763226A (en) | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductors | |
| CN110610998A (en) | Crystalline silicon solar cell with front surface in local passivation contact and preparation method thereof | |
| US20110139241A1 (en) | Solar cell and method for producing a solar cell | |
| CN208173600U (en) | For the solar battery sheet of PERC imbrication component, preparation system and PERC imbrication component | |
| CN209087883U (en) | P-type back contacted solar cell | |
| TW201725746A (en) | Tandem solar cell and method for manufacturing thereof, and solar panel | |
| CN106463562A (en) | A hybrid all-back-contact solar cell and method of fabricating the same | |
| CN106684160A (en) | Back-junction back-contact solar cell | |
| CN109461782A (en) | P-type back contacted solar cell and preparation method thereof | |
| CN105659390B (en) | Solar battery structure and its manufacture method | |
| CN105390566B (en) | A kind of upside-down mounting solar battery chip manufacture method | |
| CN206907778U (en) | A kind of efficiently PERC battery structures | |
| CN117727810A (en) | Solar cell, manufacturing method thereof and photovoltaic module | |
| CN103077977A (en) | Solar cell chip and manufacturing method thereof | |
| CN205069647U (en) | Solar cell with crystal edge collecting structure | |
| JP2019517744A (en) | PERL solar cell and method of manufacturing the same | |
| JP2003224289A (en) | Solar cell, method for connecting solar cell, and solar cell module | |
| CN107527957A (en) | Solar cell receiving light on one side, manufacturing method thereof and solar cell module | |
| EP2717327A2 (en) | Solar cell and method for manufacturing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20171229 |
|
| WD01 | Invention patent application deemed withdrawn after publication |