CN107516667A - 一种多二维电子气沟道的GaN HEMT元胞结构及器件 - Google Patents
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Abstract
本发明公开了一种多二维电子气沟道的GaN HEMT元胞结构及器件，所述元胞结构从下至上包括衬底、GaN或AlN缓冲层、若干层由GaN层和AlGaN层构成的二维电子气沟道层；相邻的所述二维电子气沟道层之间设置有一层AlN插入隔离层；若干层二维电子气沟道层从下至上呈台阶状排列，每层二维电子气沟道层上均设置有源极、漏极和栅极。本申请的元胞结构采用多层二维电子气沟道层的结构，可以大幅提升GaN HEMT器件的单位面积电流密度，降低单位功率密度的成本。器件采用多层GaN/AlGaN二维结构形成多沟道，通过多个导电沟道实现比普通GaN单2DEG沟道HEMT器件更大的面电流密度，有助于实现大功率GaN HEMT器件的制作以及降低器件单位功率密度的成本。
Description
技术领域
本发明属于半导体器件领域，具体涉及一种多二维电子气沟道的GaN HEMT元胞结构及器件。
背景技术
GaN HEMT器件具有的高频、高功率密度以及高工作温度的优点使其成为微波大功率器件以及电力电子器件发展的新方向。基于新型材料GaN研发的功率器件及其功率放大器被广泛地应用于军事、民用商业以及消费等领域，特别是对于即将在2020年实现商用的5G技术而言，GaN功放管必将占据重要地位。在军事领域，毫米波和微波功率放大器应用于雷达、通信以及智能武器系统之中，而在商业领域中，主要将功率放大器用于高速率的通信系统之中以及汽车防撞雷达等。AlGaN/GaN HEMT良好的高频高功率性能使其在微波功率放大器和高温数字电路领域颇具竞争力。AlGaN/GaN异质结由于较强的自发极化和压电极化，在AlGaN/GaN界面处存在高浓度的二维电子气2DEG迁移率(室温面密度乘积可达1016/V·s以上)。与Si基及GaAs基器件相比，AlGaN/GaNHEMT输出功率密度表现出了一个量级的提高。GaN和AlGaN材料的外延生长是GaN HEMT结构材料中至关重要的结构，其外延晶体质量的好坏、电阻率的大小、电子限域能力的强弱等因素直接影响器件的性能。如果外延晶体的位错密度高、晶体质量差，一方面会增加对沟道电子的散射作用，使电子迁移率减小，另一方面位错在某些条件下会充当陷阱俘获电子，使沟道二维电子面密度降低，引起器件的功率和效率下降。为了得到更高浓度的电子和空穴需要采用高Al组分的AlGaN，但由于Al组分过高会存在大的晶格失配，产生过大的应力和晶格弛豫。弛豫现象不止产生大量的位错，会使极化效应减弱，得不到感生电子和空穴的作用。为了提升HEMT器件的输出功率，需要进一步提高二维电子气2DEG的面密度。但现有的结构和工艺的改进很难大幅提高器件的二维电子气2DEG的面密度和器件的电流密度。
与此同时，为了获得好的热耗散效果，降低器件热阻，GaN HEMT器件工艺往往采用SiC单晶片作为GaN的外延生长衬底。但SiC衬底片相当昂贵，这也造成现有GaN HEMT器件单位功率密度的成本高昂。
发明内容
针对现有技术中存在的问题，本发明的目的在于提供一种多二维电子气沟道的GaN HEMT元胞结构，其可以大幅提升GaN HEMT器件的单位面积电流密度，降低单位功率密度的成本。本发明的另一目的在于提供一种使用本发明的元胞结构制成的GaN HEMT器件；器件采用多层GaN/AlGaN二维结构形成多沟道，通过多个导电沟道实现比普通GaN单2DEG沟道HEMT器件更大的面电流密度，有助于实现大功率GaN HEMT器件的制作以及降低器件单位功率密度的成本。
为实现上述目的，本发明采用以下技术方案：
一种多二维电子气沟道的GaN HEMT元胞结构，所述元胞结构从下至上包括衬底、GaN或AlN缓冲层、若干层由GaN层和AlGaN层构成的二维电子气沟道层；相邻的所述二维电子气沟道层之间设置有一层AlN插入隔离层；若干层二维电子气沟道层从下至上呈台阶状排列，每层二维电子气沟道层上均设置有源极、漏极和栅极。
进一步，所述AlN插入隔离层的厚度为1-20nm。
进一步，所述二维电子气沟道层的层数不少于两层。
进一步，所述源极和漏极的欧姆接触金属为Ti、Al、Ni、Au合金；或Ti、Al、Ti、Au合金；或Ti、Al、Mo、Au合金。
进一步，所述栅极的欧姆接触金属为Ni、Au合金；或Pt、Au合金；或Pd、Au合金。
进一步，所述衬底为Si、SiC或者蓝宝石衬底。
一种GaN HEMT器件，其特征在于，所述GaN HEMT器件的元胞结构为多二维电子气沟道的GaN HEMT元胞结构。
本发明具有以下有益技术效果：
本申请的元胞结构采用多层二维电子气沟道层的结构，可以大幅提升GaN HEMT器件的单位面积电流密度，降低单位功率密度的成本。器件采用多层GaN/AlGaN二维结构形成多沟道，通过多个导电沟道实现比普通GaN单2DEG沟道HEMT器件更大的面电流密度，有助于实现大功率GaN HEMT器件的制作以及降低器件单位功率密度的成本。
附图说明
图1为本发明多二维电子气2DEG沟道的GaN HEMT器件元胞结构的结构示意图；
图2为本发明多二维电子气2DEG沟道外延结构的结构示意图。
具体实施方式
下面，参考附图，对本发明进行更全面的说明，附图中示出了本发明的示例性实施例。然而，本发明可以体现为多种不同形式，并不应理解为局限于这里叙述的示例性实施例。而是，提供这些实施例，从而使本发明全面和完整，并将本发明的范围完全地传达给本领域的普通技术人员。
如图1-2所示，本发明提供了一种多二维电子气沟道的GaN HEMT元胞结构，该元胞结构从下至上包括衬底1、GaN或AlN缓冲层2、若干层由GaN层3和AlGaN层4构成的二维电子气沟道层；相邻的二维电子气沟道层之间设置有一层AlN插入隔离层5；若干层二维电子气沟道层从下至上呈台阶状排列，每层二维电子气沟道层上均设置有源极6、漏极7和栅极8。本发明的多二维电子气沟道的GaN HEMT元胞结构还包括刻蚀掩膜介质层和绝缘介质层，二者的位置及结构与现有技术中保持一致，在此不再赘述。
本发明的元胞结构在制作时，首先在衬底上外延一层GaN或AlN缓冲层，以使其上的沟道层受到的晶格失配影响减小，然后在GaN或AlN缓冲层上外延多层GaN/AlGaN二维电子气沟道层以及相邻的二维电子气沟道层中间1-20nm厚的AlN插入隔离层，并在该结构上使用类似于3D NAND存储器件的工艺方法，刻蚀出多层台阶结构，然后从最底层GaN/AlGaN2DEG沟道结构到最顶层依次制作出源、漏、栅极等HEMT器件结构，最后制作绝缘介质层和器件电极的引出。
本发明中二维电子气沟道层的层数不少于两层。
源极6和漏极7的欧姆接触金属为Ti、Al、Ni、Au合金；或Ti、Al、Ti、Au合金；或Ti、Al、Mo、Au合金。
栅极8的欧姆接触金属为Ni、Au合金；或Pt、Au合金；或Pd、Au合金。
衬底1为Si、SiC或者蓝宝石衬底。
本申请中栅条宽度范围在10～500nm之间，各层器件构造和栅条的布局朝向可以是不同方向。该实施例中采用的是平行方向。
本申请中刻蚀掩膜介质层的材料可以为：Si3N4、SiO2、SiON。绝缘介质层材料是SiO2、SiNx、Al2O3、AlN、HfO2、MgO、Sc2O3、Ga2O3、AlHFOx、HFSiON、Si3N4、Al2O3、HfTiO、SiNO等材料中的一种或任意几种。介质层通过等离子体增强化学气相沉积或原子层沉积或物理气相沉积或者磁控溅镀沉积形成。
本发明还提供了一种GaN HEMT器件，该GaN HEMT器件的元胞结构为多二维电子气沟道的GaN HEMT元胞结构。
上面所述只是为了说明本发明，应该理解为本发明并不局限于以上实施例，符合本发明思想的各种变通形式均在本发明的保护范围之内。
Claims (7)
1.一种多二维电子气沟道的GaN HEMT元胞结构，其特征在于，所述元胞结构从下至上包括衬底、GaN或AlN缓冲层、若干层由GaN层和AlGaN层构成的二维电子气沟道层；相邻的所述二维电子气沟道层之间设置有一层AlN插入隔离层；若干层二维电子气沟道层从下至上呈台阶状排列，每层二维电子气沟道层上均设置有源极、漏极和栅极。
2.根据权利要求1所述的多二维电子气沟道的GaN HEMT元胞结构，其特征在于，所述AlN插入隔离层的厚度为1-20nm。
3.根据权利要求1所述的多二维电子气沟道的GaN HEMT元胞结构，其特征在于，所述二维电子气沟道层的层数不少于两层。
4.根据权利要求1所述的多二维电子气沟道的GaN HEMT元胞结构，其特征在于，所述源极和漏极的欧姆接触金属为Ti、Al、Ni、Au合金；或Ti、Al、Ti、Au合金；或Ti、Al、Mo、Au合金。
5.根据权利要求1所述的多二维电子气沟道的GaN HEMT元胞结构，其特征在于，所述栅极的欧姆接触金属为Ni、Au合金；或Pt、Au合金；或Pd、Au合金。
6.根据权利要求1所述的多二维电子气沟道的GaN HEMT元胞结构，其特征在于，所述衬底为Si、SiC或者蓝宝石衬底。
7.一种GaN HEMT器件，其特征在于，所述GaN HEMT器件的元胞结构为权利要求1-6任一所述的多二维电子气沟道的GaN HEMT元胞结构。
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| CN116741869A (zh) * | 2023-05-23 | 2023-09-12 | 苏州科技大学 | 一种提升太赫兹探测器响应度的器件 |
| WO2024082655A1 (zh) * | 2022-10-18 | 2024-04-25 | 中兴通讯股份有限公司 | 高电子迁移率晶体管器件及其制造方法 |
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| CN116741869A (zh) * | 2023-05-23 | 2023-09-12 | 苏州科技大学 | 一种提升太赫兹探测器响应度的器件 |
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