CN107507878A - A kind of photovoltaic back glass of thin-film solar cells multi-layer film structure - Google Patents
A kind of photovoltaic back glass of thin-film solar cells multi-layer film structure Download PDFInfo
- Publication number
- CN107507878A CN107507878A CN201710796020.8A CN201710796020A CN107507878A CN 107507878 A CN107507878 A CN 107507878A CN 201710796020 A CN201710796020 A CN 201710796020A CN 107507878 A CN107507878 A CN 107507878A
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- film
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- thickness
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- 239000010408 film Substances 0.000 title claims abstract description 98
- 239000011521 glass Substances 0.000 title claims abstract description 45
- 239000010409 thin film Substances 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910002535 CuZn Inorganic materials 0.000 claims abstract description 13
- 229910010282 TiON Inorganic materials 0.000 claims abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 4
- YFNCATAIYKQPOO-UHFFFAOYSA-N thiophanate Chemical compound CCOC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OCC YFNCATAIYKQPOO-UHFFFAOYSA-N 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 239000012528 membrane Substances 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 239000005361 soda-lime glass Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Abstract
The present invention discloses a kind of photovoltaic back glass of thin-film solar cells multi-layer film structure, including substrate of glass, strain point >=570 DEG C, softening point >=800 DEG C of substrate of glass；The substrate of glass top surface is sequentially provided with SiN film layer, CuZn film layers, ZnAl film layers, drop resistance film layer, anticorrosion film and Mo film layers from the bottom to top；Drop resistance film layer is Ti film layers or Cu film layers；Anticorrosion film is MoN, MoO, TiN or TiON film layer；The thickness of SiN film layer is 80~120nm, and the thickness of CuZn film layers is 50~90nm, and the thickness of ZnAl film layers is 30~60nm, and the thickness of drop resistance film layer is 15~35nm, and the thickness of anticorrosion film is 20~50nm, and the thickness of Mo film layers is 35~65nm；The back-panel glass has the advantages that indeformable high strain-point, later stage high temperature selenizing, anticorrosive, low-resistivity, membrane stress are small, and multi-layer film structure is high with substrate of glass adhesive strength, can stop Na in substrate of glass+To absorbed layer diffusion and have good Ohmic contact with CIGS.
Description
Technical field
The present invention relates to technical field of thin-film solar, specifically a kind of thin-film solar cells multi-layer film structure
Photovoltaic back glass.
Background technology
With developing rapidly for CIGS thin film solar cell, CIGS thin film backboard glass used for solar batteries will be significantly pulled
The demand of glass, back-panel glass has high conductivity, and forms Ohmic contact with CIGS thin film, additionally it is possible to stop the corrosion of selenium, should
The glass product market space of type is huge, is advantageous to the sustainable and healthy development of China's photovoltaic industry.Meanwhile domestic glass industries
The situation of production capacity surplus is faced, is badly in need of transition and upgrade, such as the Project Product popularization and application, glass industries new development will be promoted.
The structure of back-panel glass, generally common soda lime glass+Mo films is prepared at present, and this structure has the disadvantage that：
First, Na in common soda lime glass+It is uncontrollable, excessive Na to the diffusion of CIGS absorbed layers+Diffusion can reduce on the contrary
CIGS conversion efficiency of solar cell；And common soda lime glass easily causes back-panel glass to become in later stage high temperature selenidation process
Shape, both product yield can be caused to decline；
2nd, due in traditional Mo back electrodes Mo films it is thicker, cause membrane stress big, it is relatively low with base plate glass adhesive strength；And Mo
Film preparation cost is higher.
The content of the invention
It is an object of the invention to provide a kind of photovoltaic back glass of thin-film solar cells multi-layer film structure, the back of the body
Glass sheet has the advantages that indeformable high strain-point, later stage high temperature selenizing, anticorrosive, low-resistivity, membrane stress are small, and multilayer
Membrane structure is high with substrate of glass adhesive strength, can stop Na in substrate of glass+Diffusion to absorbed layer and have well with CIGS
Ohmic contact.
The technical solution adopted for the present invention to solve the technical problems is：
A kind of photovoltaic back glass of thin-film solar cells multi-layer film structure, including substrate of glass, the strain of substrate of glass
Point >=570 DEG C, softening point >=800 DEG C；The substrate of glass top surface is sequentially provided with SiN film layer, CuZn film layers, ZnAl from the bottom to top
Film layer, drop resistance film layer, anticorrosion film and Mo film layers；
The drop resistance film layer is Ti film layers or Cu film layers；
The anticorrosion film is MoN, MoO, TiN or TiON film layer；
The thickness of the SiN film layer is 80~120 nm, and the thickness of CuZn film layers is 50~90 nm, and the thickness of ZnAl film layers is
30~60 nm, the thickness of drop resistance film layer is 15~35 nm, and the thickness of anticorrosion film is 20~50 nm, the thickness of Mo film layers
Spend for 35~65 nm.
The beneficial effects of the invention are as follows；
First, using high strain-point glass as substrate of glass, strain point and softening point are higher, and more than 550 DEG C of process temperatures make
Deformation will not be produced in later stage selenidation process by obtaining substrate of glass；
2nd, the Na in substrate of glass can effectively be stopped using multi-layer film structure, SiN film layer+CuZn film layers are diffused to, and are kept
Metal ion and SiN film layer and the insulating properties of substrate of glass in CuZn film layers, beneficial to carrying for CIGC thin-film solar cells efficiency
It is high.CuZn film layers can be with anticorrosive and reduce the overall resistivity of photovoltaic back glass.
3rd, ZnAl film layers make CuZn film layers be well bonded to resistance film layer is dropped, and reduce overall photovoltaic back glass-film
The stress in thin films of layer.
4th, drop resistance film layer can relative reduction ZnAl film layers to the resistivity of anticorrosion film, anticorrosion film can prevent
Corrosion of the selenium to CuZn film layers in later stage selenidation process.
5th, Mo film layers cause selenium and Mo to react appropriate and controllable, and form good Ohmic contact with CIGS thin film.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples：
Fig. 1 is the structural representation of the present invention.
Embodiment
As shown in figure 1, the present invention provides a kind of photovoltaic back glass of thin-film solar cells multi-layer film structure, including
Substrate of glass 1, strain point >=570 DEG C, softening point >=800 DEG C, thermal coefficient of expansion≤85 × 10-7/ DEG C of substrate of glass 1,2mm
Light transmission rate >=92% of the substrate of glass 1 of thickness in 400~800nm of wavelength；
The top surface of substrate of glass 1 be sequentially provided with from the bottom to top SiN film layer 2, CuZn film layers 3, ZnAl film layers 4, drop resistance film layer 5,
Anticorrosion film 6 and Mo film layers 7；
The drop resistance film layer 5 is Ti film layers or Cu film layers；
The anticorrosion film 6 is MoN, MoO, TiN or TiON film layer；
The thickness of the SiN film layer 2 is 80~120 nm, and the thickness of CuZn film layers 3 is 50~90 nm, the thickness of ZnAl film layers 4
For 30~60 nm, the thickness of drop resistance film layer 5 is 15~35 nm, and the thickness of anticorrosion film 6 is 20~50 nm, Mo film layers 7
Thickness be 35~65 nm.
Magnetron sputtering method can be used, sputtering grows each film layer successively from the bottom to top in the top surface of substrate of glass 1.
The above-mentioned thin-film solar cells that obtains is subjected to sheet resistance test, resistance to respectively with the photovoltaic back glass of multi-layer film structure
Friction testing and corrosion-resistant test：0.7 Ω of sheet resistance/, find not to be stripped after being tested using blade applicator, and carry out double 85
Corrosion-resistant test, it is found that moisture prolonged permeation can be resisted at high humidity by overall photovoltaic back glass exposes to the open air.
The above described is only a preferred embodiment of the present invention, any formal limitation not is made to the present invention；Appoint
What those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the side of the disclosure above
Method and technology contents make many possible changes and modifications to technical solution of the present invention, or are revised as the equivalent reality of equivalent variations
Apply example.Therefore, every content without departing from technical solution of the present invention, the technical spirit according to the present invention are done to above example
Any simple modification, equivalent substitution, equivalence changes and modification, still fall within the range of technical solution of the present invention protects.
Claims (1)
1. a kind of photovoltaic back glass of thin-film solar cells multi-layer film structure, it is characterised in that including substrate of glass, glass
Strain point >=570 DEG C, softening point >=800 DEG C of glass substrate；The substrate of glass top surface be sequentially provided with from the bottom to top SiN film layer,
CuZn film layers, ZnAl film layers, drop resistance film layer, anticorrosion film and Mo film layers；
The drop resistance film layer is Ti film layers or Cu film layers；
The anticorrosion film is MoN, MoO, TiN or TiON film layer；
The thickness of the SiN film layer is 80~120 nm, and the thickness of CuZn film layers is 50~90 nm, and the thickness of ZnAl film layers is
30~60 nm, the thickness of drop resistance film layer is 15~35 nm, and the thickness of anticorrosion film is 20~50 nm, the thickness of Mo film layers
Spend for 35~65 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710796020.8A CN107507878A (en) | 2017-09-06 | 2017-09-06 | A kind of photovoltaic back glass of thin-film solar cells multi-layer film structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710796020.8A CN107507878A (en) | 2017-09-06 | 2017-09-06 | A kind of photovoltaic back glass of thin-film solar cells multi-layer film structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107507878A true CN107507878A (en) | 2017-12-22 |
Family
ID=60694874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710796020.8A Pending CN107507878A (en) | 2017-09-06 | 2017-09-06 | A kind of photovoltaic back glass of thin-film solar cells multi-layer film structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107507878A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109449228A (en) * | 2018-12-27 | 2019-03-08 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of flexible CIGS thin film solar battery |
| CN109473494A (en) * | 2018-12-27 | 2019-03-15 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of flexible CIGS thin-film solar cells back electrode |
| WO2020155697A1 (en) * | 2019-01-31 | 2020-08-06 | (Cnbm) Bengbu Design & Research Institute For Glass Industry Co., Ltd | Arrangement, device, and method for heat treating a multilayer body |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683435A (en) * | 2011-03-09 | 2012-09-19 | 常州亚玛顿股份有限公司 | Conductive glass for thin film solar battery and preparation method thereof |
| US20140273335A1 (en) * | 2013-03-15 | 2014-09-18 | Jehad A. Abushama | METHOD AND APPARATUS FOR DEPOSITING COPPER-INDIUM-GALLIUM SELENIDE (CuInGaSe2-CIGS) THIN FILMS AND OTHER MATERIALS ON A SUBSTRATE |
| CN105164813A (en) * | 2013-05-03 | 2015-12-16 | 法国圣戈班玻璃厂 | Back contact substrate for a photovoltaic cell or module |
| CN105502927A (en) * | 2015-12-25 | 2016-04-20 | 蚌埠玻璃工业设计研究院 | Glass substrate for thin film solar cell |
-
2017
- 2017-09-06 CN CN201710796020.8A patent/CN107507878A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683435A (en) * | 2011-03-09 | 2012-09-19 | 常州亚玛顿股份有限公司 | Conductive glass for thin film solar battery and preparation method thereof |
| US20140273335A1 (en) * | 2013-03-15 | 2014-09-18 | Jehad A. Abushama | METHOD AND APPARATUS FOR DEPOSITING COPPER-INDIUM-GALLIUM SELENIDE (CuInGaSe2-CIGS) THIN FILMS AND OTHER MATERIALS ON A SUBSTRATE |
| CN105164813A (en) * | 2013-05-03 | 2015-12-16 | 法国圣戈班玻璃厂 | Back contact substrate for a photovoltaic cell or module |
| CN105502927A (en) * | 2015-12-25 | 2016-04-20 | 蚌埠玻璃工业设计研究院 | Glass substrate for thin film solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109449228A (en) * | 2018-12-27 | 2019-03-08 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of flexible CIGS thin film solar battery |
| CN109473494A (en) * | 2018-12-27 | 2019-03-15 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of flexible CIGS thin-film solar cells back electrode |
| WO2020155697A1 (en) * | 2019-01-31 | 2020-08-06 | (Cnbm) Bengbu Design & Research Institute For Glass Industry Co., Ltd | Arrangement, device, and method for heat treating a multilayer body |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171222 |