CN107493131B - Chip-level eye pattern testing method and device for semiconductor laser chip - Google Patents
Chip-level eye pattern testing method and device for semiconductor laser chip Download PDFInfo
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- CN107493131B CN107493131B CN201710581202.3A CN201710581202A CN107493131B CN 107493131 B CN107493131 B CN 107493131B CN 201710581202 A CN201710581202 A CN 201710581202A CN 107493131 B CN107493131 B CN 107493131B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/073—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an out-of-service signal
- H04B10/0731—Testing or characterisation of optical devices, e.g. amplifiers
Abstract
The invention relates to the technical field of laser testing, and provides a chip-level eye pattern testing method and a chip-level eye pattern testing device for a semiconductor laser chip. The output end of the error code instrument in the testing device is connected with a radio frequency amplifier, and the output end of the radio frequency amplifier is connected with an adjustable attenuator and then is connected with a biaser in series; the bias device is connected with the radio frequency probe and is used for contacting with a signal electrode of the laser chip after the laser chip is fixed by the laser chip fixing table with the vacuum pump; the optical probe is coupled with a light outlet of a laser fixed on a laser chip fixing table with a vacuum pump, and the other end of the optical probe is connected with the optical splitter; two paths of light splitting output ports of the optical splitter are respectively connected with an optical power meter and an oscilloscope. Compared with the radio frequency amplifier integrated into an IC used in the traditional test, the external radio frequency amplifier adopted by the invention can be repeatedly used, has wider gain adjustable range and can meet the test requirements of various chips.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of laser testing, in particular to a chip-level eye pattern testing method and a chip-level eye pattern testing device for a semiconductor laser chip.
[ background of the invention ]
Optical fiber communication mainly converts an electric signal into an optical signal through a laser and transmits the optical signal in an optical fiber, and converts the optical signal into the electric signal through a detector to realize long-distance transmission of the signal. With the expansion of modern huge data information, optical communication requires higher and higher transmission rate to speed up the processing of data, and therefore, optical communication requires a high-rate laser.
In a high-speed optical fiber communication system, the most common transmission signal codes are Non-Return-to-zero (NRZ), a pulse pattern generator generates a large number of NRZ codes arranged into a Pseudo-Random bit Sequence (PRBS), the NRZ codes are loaded onto light by an optical transmitter, the light is converted into an electrical signal by an optical receiver after being transmitted for a certain distance, the digital signal Sequence is sent to the Y axis of a digital oscilloscope, and a clock signal is used as an external trigger of the oscilloscope to synchronize the bit period, so that an eye-like pattern-eye pattern is displayed on the oscilloscope, which is a typical large-signal eye pattern test system.
Generally, all optoelectronic devices in a digital optical fiber communication system are in a large-signal state, so that the main purpose of large-signal testing of the optoelectronic devices is to investigate whether the devices can meet the communication requirement, and the large-signal testing mainly has two aspects: eye pattern testing and bit error rate testing. For a transmitting chip, i.e. a commonly used semiconductor laser, the result of the eye diagram test is an important basis for directly measuring the performance of the chip.
The inventor finds that eye pattern tests in the industry are all directed to packaged devices and modules, but for the research, development and production of laser chips, the eye pattern tests are performed after the packaged laser chips are manufactured, so that the whole research and development period is prolonged, and it is very meaningful if the eye pattern tests can be realized at a chip level.
The inventor also found that, although a testing concept for a laser chip is proposed in the prior art, the prior art still relies on an IC board matched with the laser chip, and the prior art still separates the existing optical module in a package form for testing, and cannot achieve the purpose of testing various laser chips in a broad sense.
[ summary of the invention ]
The technical problem to be solved by the embodiment of the invention is to solve the problem that in the existing laser chip testing process, the optical module packaging or semi-packaging form (as an example of the existing patent with the application number of 201320771513.3) needs to be completed to complete the corresponding testing process, and the testing result does not have the original optical characteristics of the laser chip.
The embodiment of the invention further solves the technical problem that an effective verification means does not exist in the prior art, and the method is used for detecting the packaging yield of the optical module packaging product line under the condition that the original characteristics of the laser chip are known.
The embodiment of the invention adopts the following technical scheme:
in a first aspect, the present invention provides a chip-level eye diagram testing apparatus for a semiconductor laser chip, including a power supply, an error detector, a radio frequency amplifier, an adjustable attenuator, a bias device, a radio frequency probe, a laser chip, an optical probe, a laser chip fixing station with a vacuum pump, an optical splitter, an optical power meter and an oscilloscope, where the power supply is used to provide operating voltages for each device, specifically:
the output end of the error code meter is connected with the radio frequency amplifier, and the output end of the radio frequency amplifier is connected with the adjustable attenuator and then is connected to the biaser in series;
the bias device is a three-port device and comprises a direct current bias port, a radio frequency input port and a radio frequency output port; the laser chip fixing table with the vacuum pump is used for fixing a laser chip, and a radio frequency output port of the biaser is in contact with a signal electrode of the laser chip through the radio frequency probe;
the optical probe is coupled with a light outlet of a laser fixed on the laser chip fixing table with the vacuum pump, and the other end of the optical probe is connected with the optical splitter;
and the two light splitting output ports of the optical splitter are respectively connected with the optical power meter and the oscilloscope.
Preferably, the unit devices are connected by high-speed radio frequency cables, and the bandwidth is 50 GHz; wherein the bandwidth of the biaser is 50 GHz; the bandwidth of the radio frequency amplifier is 32GHz, the bandwidth of the adjustable electric attenuator is 32GHz, and the rate of the error code meter and the oscilloscope is 32 Gb/s.
Preferably, the bias device is used for realizing the function of mixing the radio frequency signal and the direct current signal and outputting the radio frequency signal and the direct current signal to the laser chip through an output port;
a direct current bias port of the bias device is connected with a power supply, and the power supply provides direct current bias for the laser chip;
a signal channel passing through the radio frequency amplifier and the adjustable attenuator is connected to a radio frequency input port of the bias device;
the signal output by the signal output port of the bias device is a direct current bias signal required by the laser to work and a mixing signal of a radio frequency signal.
Preferably, the adjustable attenuator adjusts an external voltage signal of the attenuator to realize different attenuation amplitudes, specifically:
and linearly attenuating the signal output from the radio frequency amplifier so that the extinction ratio of the signal output from the adjustable attenuator meets the preset requirement.
Preferably, when the characteristic resistance of the laser chip is 10 Ω and the characteristic impedance of the rf probe is 50 Ω, the apparatus further includes a transition block, where the transmission impedance of the transition block is 40 Ω, specifically:
the laser chip is attached to a designated position on the transition block, and the transition block is adsorbed by the vacuum pump and fixed on the laser chip fixing table;
the metal surface of the transition block is electrically conducted with the N pole of the laser chip;
the radio frequency probe is respectively contacted with the P-type electrode of the laser chip and the designated position on the transition block, so that impedance matching and input of signals of the laser chip are realized.
Preferably, the radio frequency amplifier is specifically PSPL5882 or PSPL5865 of TEKTRONIX; the adjustable electrical attenuator is specifically of a PMI DTA-18G40G-30-CD-2 model; the biaser is specifically AGILENT 11612B; the error code device is specifically manufactured by adopting an installation 1800A; the oscilloscope adopts DSA8300 of Tak; the current source specifically adopts a Gishili 2400; the voltage source specifically adopts Agilent E3649A.
In a second aspect, the present invention further provides a chip-scale eye pattern testing method for a semiconductor laser chip, the testing method using the chip-scale eye pattern testing apparatus for a semiconductor laser chip according to the first aspect, the method including:
the error code meter sends out a PRBS code pattern signal, and the PRBS code pattern signal is sent to an input port of the radio frequency amplifier through a cable;
the power supply of the radio frequency amplifier and the adjustable attenuator is adjusted to achieve the goal that the amplification factor of the radio frequency amplifier and the signal cross point of the eye pattern meet the target requirement; wherein the target requirements include an extinction ratio of the signal and a signal cross-point of the eye pattern;
using a radio frequency probe to prick at a designated position of a laser chip and/or a transition block, loading a direct current bias and a radio frequency signal on the laser chip to be detected, and emitting light loaded with the signal by the laser chip;
the light emitted by the laser chip is received by an optical probe coupled to the laser chip;
the light probe guides light emitted by the laser chip into the oscilloscope, and the oscilloscope displays content to finish the eye pattern test of the laser chip.
Preferably, the adjusting of the power supply of the radio frequency amplifier and the adjustable attenuator is used to achieve the target requirement of the amplification factor of the radio frequency amplifier and the signal intersection point of the eye diagram, and specifically includes:
determining a signal amplification factor corresponding to the speed to be tested according to the gain curve of the radio frequency amplifier; the output signal is attenuated by an adjustable attenuator to about 2 times of the original signal; and adjusting the attenuation value of the attenuator through the real-time extinction ratio reading on the oscilloscope until the target extinction ratio is obtained.
Preferably, the adjusting of the power supply of the radio frequency amplifier and the adjustable attenuator is used to achieve the target requirement of the amplification factor of the radio frequency amplifier and the signal intersection point of the eye diagram, and specifically includes:
the signal cross-point of the eye diagram is adjusted by the signal cross-point option on the error detector and the input voltage variation on the cross point pin on the rf amplifier.
Preferably, the test method specifically includes: setting the PRBS code pattern signal rate and the clock signal rate of an error code meter according to the actual requirement of a chip to be tested, setting the signal rate and the template information of an oscilloscope, placing a laser chip and/or a transition block on a fixed station, starting a vacuum pump, fixing a piece to be tested, using a radio frequency probe to prick at the appointed position of the laser chip and/or the transition block, setting the bias current of the laser chip, carrying out optical coupling on the laser through an optical probe, starting the signal output function of the error code meter when the optical power is more than-10 dbm, starting a radio frequency amplifier, starting an electric attenuator, attenuating the signal to a set value, starting the scanning function of the oscilloscope, reading real-time parameters, and obtaining the optimal eye diagram by adjusting the extinction ratio and the signal intersection point of the eye diagram.
Preferably, the test method further comprises: and the temperature of the test bench is set to the target temperature by matching with a high-temperature heating device, and the high-temperature eye pattern test task can be completed according to the operation.
The testing device provided by the invention realizes the eye pattern test of the semiconductor laser at the chip level, does not need to be packaged into a device, can obtain related test data at the first time, and effectively shortens the research and development period; compared with the radio frequency amplifier integrated in the IC used in the traditional test, the external radio frequency amplifier adopted by the invention can be repeatedly used, has wider gain adjustable range and can meet the test requirements of various chips.
The testing method disclosed by the invention can be repeatedly used after the system is built, and the system stability and accuracy are high.
[ description of the drawings ]
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a chip-level eye pattern testing device of a semiconductor laser chip according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a part of a laser chip fixing table 9 with a vacuum pump according to an embodiment of the present invention;
FIG. 3 is a schematic top view of an embodiment of the invention providing an air guide tray mounted to a surface of a laser chip mounting stage with a vacuum pump;
FIG. 4 is a schematic top view of an air guide tray provided with a laser chip to be tested according to an embodiment of the present invention;
fig. 5 is a schematic flowchart of a method for testing a chip-level eye pattern of a semiconductor laser chip according to an embodiment of the present invention.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, the terms "inner", "outer", "longitudinal", "lateral", "upper", "lower", "top", "bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are for convenience only to describe the present invention without requiring the present invention to be necessarily constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1:
the embodiment 1 of the present invention provides a chip-level eye diagram testing device for a semiconductor laser chip, as shown in fig. 1, including a power supply 1, an error detector 2, a radio frequency amplifier 3, an adjustable attenuator 4, a bias device 5, a radio frequency probe 6, a laser chip 7, an optical probe 8, a laser chip fixing table 9 with a vacuum pump, an optical splitter 10, an optical power meter 11 and an oscilloscope 12, where the power supply 1 is configured to provide operating voltages for each device, specifically:
the output end of the error code meter 2 is connected with the radio frequency amplifier 3, and the output end of the radio frequency amplifier 3 is connected with the adjustable attenuator 4 and then is connected to the biaser 5 in series;
the bias device 5 is a three-port device and comprises a direct current bias port, a radio frequency input port and a radio frequency output port; the bias device 5 is connected with the radio frequency probe 6 and is used for contacting a radio frequency output port of the bias device 5 with a signal electrode of the laser chip 7 through the radio frequency probe 6 after the laser chip 7 is fixed on the laser chip fixing table 9 with the vacuum pump;
the optical probe 8 is coupled with a light outlet of a laser fixed on the laser chip fixing table 9 with the vacuum pump, and the other end of the optical probe 8 is connected with the optical splitter 10;
and two paths of light splitting output ports of the optical splitter 10 are respectively connected with the optical power meter 11 and the oscilloscope 12.
The testing device disclosed by the embodiment of the invention realizes the eye pattern test of the semiconductor laser at the chip level, does not need to be packaged into a device, can obtain related test data at the first time, and effectively shortens the research and development period; compared with the radio frequency amplifier integrated in the IC used in the traditional test, the external radio frequency amplifier adopted by the invention can be repeatedly used, has wider gain adjustable range and can meet the test requirements of various chips.
In order to realize the compatibility of the testing device for testing under the rate of 32Gb/s, a set of preferable parameter combinations is also provided in combination with the embodiment of the invention. Specifically, the method comprises the following steps: the high-speed radio frequency cable is connected with each unit device, and the bandwidth is 50 GHz; wherein the bandwidth of the biaser 5 is 50 GHz; the bandwidth of the radio frequency amplifier 3 is 32GHz, the bandwidth of the adjustable electric attenuator is 32GHz, and the error code meter 2 and the oscilloscope 12 support the rate of 32 Gb/s.
In the embodiment of the present invention, the biaser 5 is configured to implement a function of mixing a radio frequency signal and a direct current signal, and output the radio frequency signal and the direct current signal to the laser chip 7 through an output port;
a direct current bias port of the biaser 5 is connected with a power supply, and the power supply provides direct current bias for the laser chip 7;
a signal channel passing through the radio frequency amplifier 3 and the adjustable attenuator 4 is connected to a radio frequency input port of the bias device 5;
the signal output from the signal output port of the biaser 5 is a mixed signal of a dc bias signal and a radio frequency signal required by the laser to operate.
In the embodiment of the invention, the radio-frequency signal given by the error code meter firstly enters the radio-frequency amplifier for amplification, and then the radio-frequency signal is attenuated through electric attenuation, and the maximum attenuation amplitude of the attenuator is far greater than the amplification amplitude of the radio-frequency amplifier. The adjustable attenuator 4 adjusts the voltage signal applied to the attenuator to realize different attenuation amplitudes, and linearly attenuates the signal output from the radio frequency amplifier 3, so that the extinction ratio of the signal output from the adjustable attenuator 4 meets the preset requirement. The embodiment of the invention realizes the adjustment of the input signal by using the radio frequency amplifier and the adjustable electric attenuator, thereby realizing the function of driving the laser IC in the prior art. In contrast, the combination of the radio frequency amplifier and the adjustable attenuator provided by the embodiment of the invention can be compatible with the test of all types of laser chips with the speed of at least 32 Gb/s.
As shown in fig. 2, a partial structural schematic view of the laser chip fixing table 9 with a vacuum pump provided in an embodiment of the present invention is provided, wherein the laser chip fixing table 9 with a vacuum pump includes an air guide tray 91, a first interface 92 coupled to the vacuum pump is disposed at a bottom of the air guide tray 91, and a second interface 93 for transition and communicated with the first interface, and a conducting groove 94 is further disposed on the second interface. Specifically, the first port 92 and the second port 93 are located at the bottom of the air guide tray 91, but do not penetrate through the surface of the air guide tray 91, and the vacuum pump transfers the suction force generated by the vacuum pump to the conduction groove 94 of the second port 93 through the second port 93 communicated with the first port 92. The conduction groove 94 is located on the surface of the air guide tray 91 and is used for placing a laser chip to be tested. The notch space areas of the first interface 92 and the second interface 93 are different by 2-10 times, and the notch space areas are used for adapting the vacuum pump suction force suitable for fixing the laser chip. As shown in fig. 3, a schematic top view of the air guide tray 91 fixed to the surface of the laser chip fixing table 9 with a vacuum pump, and fig. 4 is a schematic top view of the air guide tray 91 provided with the laser chip to be tested.
When the prior art is used for eye pattern testing, chips with different rates can correspondingly use different packaging circuits, for example, a 25Gb/s packaging circuit can pay more attention to optimizing high-frequency characteristics than a 10Gb/s packaging circuit, and the cost of the circuit is higher. Furthermore, 10Gb/s and 25Gb/s package circuits are not universal to each other because different rate circuits use different band pass filters in the filter circuit, and only signals of a specific rate range can pass through. In the test circuit, one set of equipment can simultaneously complete multi-rate test tasks, the rate of all the equipment and devices in the test circuit can reach 32Gb/s, and a broadband filter circuit is used in the equipment and the device, so that eye pattern test tasks of single-end 32Gb/s and all rates below the single-end 32Gb/s can be completed.
Furthermore, in the actual test experiment process, it is found that there may be a problem of impedance mismatch when the test is completed only by relying on the laser chip and the radio frequency probe, so that there is a preferred implementation scheme in combination with the embodiment of the present invention, that is, a transition block is provided to achieve the matching of the resistance. The following is set forth in connection with specific parameter examples: when the characteristic resistance of the laser chip 7 is 10 Ω and the characteristic impedance of the radio frequency probe 6 is 50 Ω, the apparatus further includes a transition block, and the transmission impedance of the transition block is 40 Ω, specifically:
the laser chip 7 is attached to a designated position on the transition block, and the transition block is adsorbed by the vacuum pump and fixed on the laser chip fixing table;
the metal surface of the transition block is electrically conducted with the N pole of the laser chip 7;
the radio frequency probe 6 is respectively contacted with the P-type electrode of the laser chip 7 and the designated position on the transition block, so that impedance matching and signal input of the laser chip 7 are realized, and the interference of noise is reduced.
The radio frequency amplifier, the biaser and the cable used in the testing device provided by the embodiment of the invention are high-precision and low-loss components, the introduced parasitic parameters are less, and the accuracy of the testing result can be improved to a certain extent. For example: the radio frequency amplifier 3 specifically adopts PSPL5882 or PSPL5865 of TEKTRONIX; the adjustable electrical attenuator is specifically of a PMI DTA-18G40G-30-CD-2 model; the biaser 5 specifically adopts 11612B of AGILENT; the error code device 2 is specifically made of an ampere stand 1800A; the oscilloscope 12 specifically adopts DSA8300 of Tak; the current source specifically adopts a Gishili 2400; the voltage source specifically adopts Agilent E3649A.
Example 2:
the embodiment of the present invention provides a chip-scale eye diagram testing apparatus for a semiconductor laser chip according to embodiment 1, and further provides a chip-scale eye diagram testing method for a semiconductor laser chip, where the testing apparatus according to embodiment 1 is used in the testing method, and as shown in fig. 5, the testing method includes:
in step 201, the error detector 2 sends out a PRBS pattern signal, which is sent to the input port of the rf amplifier 3 via a cable.
In step 202, the power supply 1 of the radio frequency amplifier 3 and the adjustable attenuator 4 is adjusted to achieve the purpose that the amplification factor of the radio frequency amplifier 3 and the signal intersection point of the eye pattern meet the target requirement; wherein the target requirements include an extinction ratio of the signal and a signal cross-point of the eye pattern.
The signal CROSS POINT of the eye diagram can be adjusted through the signal CROSS POINT option on the error code meter and the input voltage change of the CROSS POINT pin on the radio frequency amplifier.
In step 203, a radio frequency probe 6 is used to prick at a designated position of the laser chip 7 and/or the transition block, a direct current bias and a radio frequency signal are loaded on the laser chip 7 to be tested, and the laser chip 7 emits light loaded with the signal.
In step 204, the light emitted by the laser chip 7 is received by an optical probe 8 coupled to the laser chip 7.
In step 205, the optical probe 8 guides the light emitted from the laser chip 7 into the oscilloscope 12, and the content displayed by the oscilloscope 12 completes the eye pattern test of the laser chip 7.
The testing method disclosed by the embodiment of the invention realizes the eye pattern test of the semiconductor laser at the chip level, does not need to be packaged into a device, can obtain related testing data at the first time, and effectively shortens the research and development period; compared with the radio frequency amplifier integrated in the IC used in the traditional test, the external radio frequency amplifier adopted by the invention can be repeatedly used, has wider gain adjustable range and can meet the test requirements of various chips. The testing method disclosed by the invention can be repeatedly used after the system is built, and the system stability and accuracy are high.
In conventional test schemes, the signal is modulated using the IC drive. The laser chip is loaded with a direct current bias signal through a corresponding pin on the IC drive, so that the laser chip starts to emit light, but the emitted light is not loaded with a signal, and the radio frequency input IC drive is modulated and loaded on the laser chip, so that the light emitted by the laser is the light loaded with the signal. However, the eye pattern formed by the optical signal at this time is not necessarily optimal, and it is necessary to adjust the appearance of the eye pattern by adjusting the magnitude of the modulation current signal output by the IC driver, so as to achieve the optimal result. The embodiment of the invention directly introduces the error code meter 2 and the matched radio frequency amplifier 3, the adjustable attenuator 4 and the laser signal modulator, so that the tested laser chip can introduce signal content, and the test result is more accurate and credible.
In the implementation process of the embodiment of the present invention, the adjusting the power supplies of the radio frequency amplifier and the adjustable attenuator is used to achieve the goal of the amplification factor of the radio frequency amplifier and the signal intersection of the eye pattern, and specifically includes:
determining a signal amplification factor corresponding to the speed to be tested according to the gain curve of the radio frequency amplifier; the output signal is attenuated by an adjustable attenuator to about 2 times of the original signal; and adjusting the attenuation value of the attenuator through the real-time extinction ratio reading on the oscilloscope until the target extinction ratio is obtained. The configuration requirement of the extinction ratio of the laser in the eye pattern test is met. In combination with the above-described arrangement of signal crossings with respect to the eye pattern, the basic configuration requirements for performing laser eye pattern testing are met. The amplification factor of the radio frequency amplifier is adjusted to the target requirement, and the target requirement is finally expressed as the extinction ratio of the laser.
In a specific testing process, the method of the embodiment is generally executed in the following procedures based on specific operation contents, specifically: setting the PRBS code pattern signal rate and the clock signal rate of the error code meter according to the actual requirement of a chip to be tested, setting the signal rate and the template information of the oscilloscope, placing a laser chip and/or a transition block on a fixed station (the laser chip and/or the transition block is understood as a laser chip when the transition block is not involved), starting a vacuum pump, fixing a piece to be tested, using a radio frequency probe to prick at the specified position of the laser chip and/or the transition block, setting the bias current of the laser chip, optically coupling the laser through an optical probe, starting the signal output function of the error code meter when the optical power is more than-10 dbm, starting a radio frequency amplifier, and opening the electric attenuator, attenuating the signal to a set value, opening the scanning function of the oscilloscope, reading real-time parameters, and adjusting the extinction ratio and the signal intersection point of the eye pattern to obtain the optimal eye pattern.
Further combining with the embodiment of the present invention, there is also a preferred expansion scheme, specifically: and the temperature of the test bench is set to the target temperature by matching with a high-temperature heating device, and the high-temperature eye pattern test task can be completed according to the operation.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The chip-level eye pattern testing device of the semiconductor laser chip is characterized by comprising a power supply, an error code meter, a radio frequency amplifier, an adjustable attenuator, a bias device, a radio frequency probe, a laser chip, an optical probe, a laser chip fixing table with a vacuum pump, an optical splitter, an optical power meter and an oscilloscope, wherein the power supply is used for providing working voltage for each device, and specifically comprises the following components:
the output end of the error code meter is connected with the radio frequency amplifier, and the output end of the radio frequency amplifier is connected with the adjustable attenuator and then is connected to the biaser in series;
the bias device is a three-port device and comprises a direct current bias port, a radio frequency input port and a radio frequency output port; the laser chip fixing table with the vacuum pump is used for fixing a laser chip, and the radio frequency output port of the biaser is in contact with a signal electrode of the laser chip through the radio frequency probe; the radio frequency input port of the bias device is connected with the adjustable attenuator; the direct current bias port of the bias device is connected with a power supply;
the optical probe is coupled with a light outlet of a laser chip fixed on the laser chip fixing table with the vacuum pump, and the other end of the optical probe is connected with the optical splitter;
and the two light splitting output ports of the optical splitter are respectively connected with the optical power meter and the oscilloscope.
2. The device for testing an eye pattern of a semiconductor laser chip on a chip according to claim 1, wherein the high-speed radio frequency cable is connected to each unit device, and the bandwidth is 50 GHz; wherein the bandwidth of the biaser is 50 GHz; the bandwidth of the radio frequency amplifier is 32GHz, the bandwidth of the adjustable electric attenuator is 32GHz, and the rate of the error code meter and the oscilloscope is 32 Gb/s.
3. The chip-scale eye pattern testing device of the semiconductor laser chip as claimed in claim 1 or 2, wherein the bias device is used for realizing the function of mixing the radio frequency signal and the direct current signal and outputting the radio frequency signal and the direct current signal to the laser chip through a radio frequency output port;
a direct current bias port of the bias device is connected with a power supply, and the power supply provides direct current bias for the laser chip; wherein the power supply is a current source;
a signal channel passing through the radio frequency amplifier and the adjustable attenuator is connected to a radio frequency input port of the bias device;
the signal output by the radio frequency output port of the bias device is a direct current bias signal required by the laser chip to work and a mixing signal of the radio frequency signal.
4. The chip-scale eye pattern testing device of the semiconductor laser chip as claimed in claim 1 or 2, wherein the adjustable attenuator realizes different attenuation amplitudes by adjusting an applied voltage signal of the attenuator, specifically:
and linearly attenuating the signal output from the radio frequency amplifier so that the extinction ratio of the signal output from the adjustable attenuator meets the preset requirement.
5. The chip-scale eye diagram test device of a semiconductor laser chip according to claim 1 or 2, wherein when the characteristic resistance of the laser chip is 10 Ω and the characteristic impedance of the rf probe is 50 Ω, then the device further comprises a transition block, the transmission impedance of the transition block is 40 Ω, specifically:
the laser chip is attached to a designated position on the transition block, and the transition block is adsorbed by the vacuum pump and fixed on the laser chip fixing table;
the metal surface of the transition block is electrically conducted with the N pole of the laser chip;
the radio frequency probe is respectively contacted with the P-type electrode of the laser chip and the designated position on the transition block, so that impedance matching and input of signals of the laser chip are realized.
6. The chip-scale eye diagram test apparatus for semiconductor laser chips as claimed in claim 1 or 2, wherein the rf amplifier is PSPL5882 or PSPL5865 of TEKTRONIX; the adjustable electrical attenuator is specifically of a PMI DTA-18G40G-30-CD-2 model; the biaser is specifically AGILENT 11612B; the error code device is specifically manufactured by adopting an installation 1800A; the oscilloscope adopts DSA8300 of Tak; the current source is specially Gekkiln 2400; the voltage source specifically adopts Agilent E3649A.
7. A chip-level eye pattern testing method of a semiconductor laser chip, wherein the testing method uses a chip-level eye pattern testing apparatus of a semiconductor laser chip according to any one of claims 1 to 5, the method comprising:
the error code meter sends out a PRBS (pseudo random bit sequence) code type signal, and the PRBS code type signal is sent to an input port of the radio frequency amplifier through a cable;
the power supply of the radio frequency amplifier and the adjustable attenuator is adjusted to achieve the goal that the amplification factor of the radio frequency amplifier and the signal cross point of the eye pattern meet the target requirement; wherein the target requirements include an extinction ratio of the signal and a signal cross-point of the eye pattern;
using a radio frequency probe to prick at a specified position of a laser chip or specified positions of the laser chip and a transition block, loading a direct current bias and a radio frequency signal on the laser chip to be detected, and emitting light loaded with the signal by the laser chip;
the light emitted by the laser chip is received by an optical probe coupled to the laser chip;
the light probe guides light emitted by the laser chip into the oscilloscope, and the oscilloscope displays content to finish the eye pattern test of the laser chip.
8. The method for testing an eye pattern on a chip scale of a semiconductor laser chip as claimed in claim 7, wherein the adjusting of the power supplies of the radio frequency amplifier and the adjustable attenuator is used to achieve the target requirements of the amplification factor of the radio frequency amplifier and the signal intersection point of the eye pattern, and specifically comprises:
determining a signal amplification factor corresponding to the speed to be tested according to the gain curve of the radio frequency amplifier;
the output signal is attenuated by an adjustable attenuator to 2 times of the original signal;
and adjusting the attenuation value of the attenuator through the real-time extinction ratio reading on the oscilloscope until the target extinction ratio is obtained.
9. The method for testing an eye pattern on a chip scale of a semiconductor laser chip as claimed in claim 7, wherein the adjusting of the power supplies of the radio frequency amplifier and the adjustable attenuator is used to achieve the target requirements of the amplification factor of the radio frequency amplifier and the signal intersection point of the eye pattern, and specifically comprises:
the signal cross-over point of the eye diagram is adjusted by the signal cross-over point option on the error detector and/or the input voltage variation on the cross point pin on the rf amplifier.
10. The method of testing an eye pattern on a chip of a semiconductor laser chip as claimed in claim 7, wherein the method specifically comprises:
setting the PRBS code pattern signal rate and clock signal rate of the error code meter, setting the signal rate and template information of the oscilloscope, placing the laser chip on the fixed station, or the laser chip and the transition block are placed on a fixed table, the vacuum pump is started, the spare part is fixed, the radio frequency probe is used for pricking at the designated position of the laser chip, or the designated positions of the laser chip and the transition block are provided with the bias current of the laser chip, the laser chip is optically coupled through the optical probe, when the optical power is more than-10 dbm, the signal output function of the error code meter is started, the radio frequency amplifier is started, the electric attenuator is started, and attenuating the signal to a designated value, starting the scanning function of the oscilloscope, reading the real-time parameters, and adjusting the extinction ratio and the signal intersection point of the eye pattern to obtain the optimal eye pattern.
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| CN109412685B (en) * | 2018-09-14 | 2020-10-02 | 武汉电信器件有限公司 | Semiconductor detector chip detection method |
| CN113092867A (en) * | 2021-03-29 | 2021-07-09 | 上海橙科微电子科技有限公司 | Method, system and medium for testing continuity of impedance of light module transmission system through square wave |
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| CN113933684A (en) * | 2021-09-26 | 2022-01-14 | 武汉光谷信息光电子创新中心有限公司 | System and method for testing chip characteristics |
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