CN107459033A - Method for preparing graphene film - Google Patents
Method for preparing graphene film Download PDFInfo
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- CN107459033A CN107459033A CN201710561540.0A CN201710561540A CN107459033A CN 107459033 A CN107459033 A CN 107459033A CN 201710561540 A CN201710561540 A CN 201710561540A CN 107459033 A CN107459033 A CN 107459033A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000011888 foil Substances 0.000 claims abstract description 41
- 230000008569 process Effects 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims description 29
- 230000005540 biological transmission Effects 0.000 claims description 16
- 238000004804 winding Methods 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 9
- 230000007723 transport mechanism Effects 0.000 claims description 9
- 230000005684 electric field Effects 0.000 abstract description 8
- 239000002699 waste material Substances 0.000 abstract description 3
- 230000001737 promoting effect Effects 0.000 abstract 1
- 150000001336 alkenes Chemical class 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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- C12P—FERMENTATION OR ENZYME-USING PROCESSES TO SYNTHESISE A DESIRED CHEMICAL COMPOUND OR COMPOSITION OR TO SEPARATE OPTICAL ISOMERS FROM A RACEMIC MIXTURE
- C12P13/00—Preparation of nitrogen-containing organic compounds
- C12P13/04—Alpha- or beta- amino acids
- C12P13/06—Alanine; Leucine; Isoleucine; Serine; Homoserine
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D239/00—Heterocyclic compounds containing 1,3-diazine or hydrogenated 1,3-diazine rings
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- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12N—MICROORGANISMS OR ENZYMES; COMPOSITIONS THEREOF; PROPAGATING, PRESERVING, OR MAINTAINING MICROORGANISMS; MUTATION OR GENETIC ENGINEERING; CULTURE MEDIA
- C12N9/00—Enzymes; Proenzymes; Compositions thereof; Processes for preparing, activating, inhibiting, separating or purifying enzymes
- C12N9/10—Transferases (2.)
- C12N9/1096—Transferases (2.) transferring nitrogenous groups (2.6)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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Abstract
The invention discloses a method for preparing a graphene film, which comprises the steps of applying a certain voltage between a second conveying assembly and an air nozzle, generating an electric field between a graphene foil strip and the air nozzle, and promoting the optimal growth of the graphene film under the action of the electric field; the problems of low growth speed, non-uniform film forming, large process gas waste and the like of the graphene film in the prior art are solved.
Description
Technical field
The present invention relates to graphene film preparing technical field, more particularly to a kind of side for being used to prepare graphene film
Method.
Background technology
Graphene is outstanding new function material, and it is aobvious to be widely used in solar cell, sensor, microelectronics, flexibility
Show, the field such as energy stores, mainly prepared at present with conventional CVD, i.e., graphene foil is heated to technological requirement
Temperature, process gas is then passed to, grow to form graphene film by the spontaneous reaction on graphene foil surface.
Due to the graphene film process units that prior art uses, realized by spontaneous reaction.Therefore exist
The speed of growth is slow, film forming is uneven, process gas wastes the problems such as big, directly influences the quality of graphene film and is produced into
This.
The content of the invention
It is an object of the invention to provide a kind of method for preparing graphene film, by the second transfer assembly and spray
Apply certain voltage between valve, produce electric field between graphene foil and air nozzle, promote stone in the presence of electric field
The Optimal Growing of black alkene film.
To reach above-mentioned purpose, the technical solution adopted by the present invention is：
A kind of method for preparing graphene film, comprise the following steps：
（1）Vacuum cavity is set；
（2）It is provided for transmitting the transport mechanism of graphene foil in the vacuum cavity, sets and cause the transport mechanism
Second including the first transfer assembly located at graphene foil transmission top, located at graphene foil transmission end
Transfer assembly；Wherein, second transfer assembly is conductive；
（3）In the vacuum cavity set positioned at first transfer assembly and second transfer assembly between for pair
The heating arrangements of the graphene foil heating；
（4）It is provided for conveying for cooperation to entering the graphene foil in the heating arrangements in the vacuum cavity
Grow the gas transmission mechanism of the process gas of graphene film；The gas transmission mechanism includes what is be spaced apart with the graphene foil
Air nozzle, wherein, the air nozzle is conductive；
（5）Power supply module is set so that second transfer assembly turns on the negative or positive electrode of the power supply module, and causes
The air nozzle turns on the negative pole or positive pole of the power supply module；
（6）Open the transport mechanism, the heating arrangements, the gas transmission mechanism, the power supply module so that the graphene
Foil grows in the vacuum cavity forms the graphene film.
Preferably, set and cause direction of transfer of first transfer assembly along the graphene foil to include unreeling successively
Wheel, the first directive wheel.
Preferably, setting causes direction of transfer of second transfer assembly along the graphene foil to include second successively
Directive wheel, winding wheel.
Second directive wheel and the winding wheel is caused to be respectively provided with electric conductivity it is highly preferred that setting.
Preferably, set and cause the heating arrangements to include symmetrically being located at the first of the side surface of graphene foil one
Heating component and the second heating component located at another side surface of graphene foil.
Preferably, setting causes the air nozzle to be located at the heating arrangements close to one end of first transfer assembly.
Preferably, one kind that the power supply module is selected in dc source, AC power or the pulse power.
Due to the utilization of above-mentioned technical proposal, the present invention has following advantages compared with prior art：A kind of use of the invention
In the method for preparing graphene film, by applying certain voltage between the second transfer assembly and air nozzle, in graphene
Electric field is produced between foil and air nozzle, promotes the Optimal Growing of graphene film in the presence of electric field；Solves existing skill
The graphene film speed of growth existing for art is slow, film forming is uneven, process gas wastes the problems such as big.
Brief description of the drawings
Accompanying drawing 1 is the structural representation using one embodiment device of the inventive method.
Wherein：1st, vacuum cavity；2nd, air nozzle；3rd, power supply module；4th, unreeling wheel；5th, the first directive wheel；6th, second it is oriented to
Wheel；7th, winding wheel；8th, the first heating component；9th, the second heating component；10th, graphene foil.
Embodiment
The technical solution of the present invention will be further described below with reference to the accompanying drawings.
It is shown in Figure 1, a kind of above-mentioned method for preparing graphene film, comprise the following steps：
（1）Vacuum cavity 1 is set.
（2）It is provided for transmitting the transport mechanism of graphene foil 10 in vacuum cavity 1, sets and cause the transport mechanism
Including transmitting top located at graphene foil 10（Shown in Figure 1, the transmission top is the right-hand member in Fig. 1）First transmission
Component, the second transfer assembly located at the transmission of graphene foil 10 end；Wherein, the second transfer assembly is conductive.
In the present embodiment, graphene foil 10 transmits in the horizontal direction；First transfer assembly is along graphene foil 10
Direction of transfer successively include unreeling wheel 4, the first directive wheel 5；The direction of transfer of second transfer assembly along graphene foil 10
Include the second directive wheel 6, winding wheel 7 successively, second directive wheel 6 and winding wheel 7 are respectively provided with electric conductivity.Wherein, unreeling wheel 4,
First directive wheel 5, the second directive wheel 6, the direction of axis line of winding wheel 7 are distributed and are parallel to each other in the horizontal direction, unreeling wheel
4th, the first directive wheel 5, the second directive wheel 6, the upper edge of winding wheel 7 are located in same horizontal line.
（3）Set in vacuum cavity 1 and be used between the first transfer assembly and the second transfer assembly to graphene
The heating arrangements that foil 10 heats；In the present embodiment, the heating arrangements are included symmetrically located at the upside of graphene foil 10
First heating component 8 on surface and the second heating component 9 located at the downside surface of graphene foil 10.
（4）It is provided for conveying process gas to the graphene foil 10 entered in heating arrangements in vacuum cavity 1
Gas transmission mechanism；The process gas is used for the growth for coordinating graphene film in heating environment；The gas transmission mechanism includes and graphite
The air nozzle 2 that alkene foil is spaced apart, wherein, the air nozzle 2 is conductive；The air nozzle 2 is located at the right side of the heating arrangements
End（Shown in Figure 1, the right-hand member is the right-hand member in Fig. 1）, and the air nozzle 2 is positioned at the first heating component 8 and the second heating
Between component 9.In the present embodiment, the air nozzle 2 is between the first heating component 8 and graphene foil 10.
（5）Set power supply module 3 so that the air nozzle 2 turns on the positive pole of the power supply module 3, while so that this second
Transfer assembly turns on the negative pole of power supply module 3；It is also possible that the air nozzle 2 turns on the negative pole of the power supply module 3, simultaneously
So that second transfer assembly turns on the positive pole of power supply module 3.Second transfer assembly can pass through the second directive wheel 6 or winding
Wheel 7 turns on power supply module 3.Power supply module 3 is from one kind in dc source, AC power or the pulse power, in this implementation
In example, the power supply module 3 selects dc source, and the opening and closing of the electric current and size can be adjusted as needed.
（6）The vacuum cavity 1 is vacuumized, and opens transport mechanism, heating arrangements, gas transmission mechanism, power supply module 3, is made
Graphene foil 10 grows in vacuum cavity 1 and forms graphene film.By between the second transfer assembly and air nozzle 2
Apply certain voltage, electric field is produced between graphene foil 10 and air nozzle 2, promote graphene thin in the presence of electric field
The Optimal Growing of film.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar can understand present disclosure and be carried out, and it is not intended to limit the scope of the present invention, all according to the present invention
The equivalent change or modification that Spirit Essence is made, it should all cover within the scope of the present invention.
Claims (7)
- A kind of 1. method for preparing graphene film, it is characterised in that：Comprise the following steps：（1）Vacuum cavity is set；（2）It is provided for transmitting the transport mechanism of graphene foil in the vacuum cavity, sets and cause the transport mechanism Second including the first transfer assembly located at graphene foil transmission top, located at graphene foil transmission end Transfer assembly；Wherein, second transfer assembly is conductive；（3）In the vacuum cavity set positioned at first transfer assembly and second transfer assembly between for pair The heating arrangements of the graphene foil heating；（4）It is provided for conveying for cooperation to entering the graphene foil in the heating arrangements in the vacuum cavity Grow the gas transmission mechanism of the process gas of graphene film；The gas transmission mechanism includes what is be spaced apart with the graphene foil Air nozzle, wherein, the air nozzle is conductive；（5）Power supply module is set so that second transfer assembly turns on the negative or positive electrode of the power supply module, and causes The air nozzle turns on the negative pole or positive pole of the power supply module；（6）Open the transport mechanism, the heating arrangements, the gas transmission mechanism, the power supply module so that the graphene Foil grows in the vacuum cavity forms the graphene film.
- A kind of 2. method for preparing graphene film according to claim 1, it is characterised in that：Set described in causing Direction of transfer of first transfer assembly along the graphene foil includes unreeling wheel, the first directive wheel successively.
- A kind of 3. method for preparing graphene film according to claim 1, it is characterised in that：Set described in causing Direction of transfer of second transfer assembly along the graphene foil includes the second directive wheel, winding wheel successively.
- A kind of 4. method for preparing graphene film according to claim 3, it is characterised in that：Set described in causing Second directive wheel and the winding wheel are respectively provided with electric conductivity.
- A kind of 5. method for preparing graphene film according to claim 1, it is characterised in that：Set described in causing Heating arrangements are included symmetrically located at the first heating component of the side surface of graphene foil one and located at the graphene paper tinsel The second heating component with another side surface.
- A kind of 6. method for preparing graphene film according to claim 1, it is characterised in that：Set described in causing Air nozzle is located at the heating arrangements close to one end of first transfer assembly.
- A kind of 7. method for preparing graphene film according to claim 1, it is characterised in that：The power supply module From one kind in dc source, AC power or the pulse power.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710561540.0A CN107459033A (en) | 2017-07-11 | 2017-07-11 | Method for preparing graphene film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710561540.0A CN107459033A (en) | 2017-07-11 | 2017-07-11 | Method for preparing graphene film |
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| Publication Number | Publication Date |
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| CN107459033A true CN107459033A (en) | 2017-12-12 |
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| CN201710561540.0A Pending CN107459033A (en) | 2017-07-11 | 2017-07-11 | Method for preparing graphene film |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097297A (en) * | 2010-11-16 | 2011-06-15 | 复旦大学 | Method for depositing high k gate dielectrics on atomic layer on graphene surface by adopting electric field induction |
| CN103305806A (en) * | 2013-06-28 | 2013-09-18 | 重庆墨希科技有限公司 | Device for continuously growing graphene at high temperature |
| US20130248229A1 (en) * | 2012-03-21 | 2013-09-26 | Tyco Electronics Corporation | Electrical conductors and methods of manufacturing electrical conductors |
| CN103382551A (en) * | 2012-05-01 | 2013-11-06 | 台湾积体电路制造股份有限公司 | Semiconductor film formation apparatus and process |
| CN103695869A (en) * | 2013-12-20 | 2014-04-02 | 上海中电振华晶体技术有限公司 | Preparation method of graphene film |
| CN103708444A (en) * | 2013-12-20 | 2014-04-09 | 上海中电振华晶体技术有限公司 | Preparation method and equipment of graphene film |
-
2017
- 2017-07-11 CN CN201710561540.0A patent/CN107459033A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097297A (en) * | 2010-11-16 | 2011-06-15 | 复旦大学 | Method for depositing high k gate dielectrics on atomic layer on graphene surface by adopting electric field induction |
| US20130248229A1 (en) * | 2012-03-21 | 2013-09-26 | Tyco Electronics Corporation | Electrical conductors and methods of manufacturing electrical conductors |
| CN103382551A (en) * | 2012-05-01 | 2013-11-06 | 台湾积体电路制造股份有限公司 | Semiconductor film formation apparatus and process |
| CN103305806A (en) * | 2013-06-28 | 2013-09-18 | 重庆墨希科技有限公司 | Device for continuously growing graphene at high temperature |
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| 姚寿山等编: "《表面科学与技术》", 31 January 2005, 机械工业出版社 * |
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