CN102431964A - Method for controllable generation of quantum dots or quantum wires - Google Patents
Method for controllable generation of quantum dots or quantum wires Download PDFInfo
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- CN102431964A CN102431964A CN2011104213041A CN201110421304A CN102431964A CN 102431964 A CN102431964 A CN 102431964A CN 2011104213041 A CN2011104213041 A CN 2011104213041A CN 201110421304 A CN201110421304 A CN 201110421304A CN 102431964 A CN102431964 A CN 102431964A
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Abstract
The invention discloses a method for controllable generation of quantum dots or quantum wires, which belongs to the field of preparation of low-dimensional quantum materials. The method comprises the following steps: arranging a substrate for growing the quantum dots or the quantum wires in solution with dissolved the quantum dots or the quantum wires and arranging an electrode which is in contact with the lower surface of the substrate on the bottom surface of the substrate; applying voltage between the solution and the electrode for forming a steady electric field so as to enable quantum dot or quantum wire material in the solution to settle in the position where the electrode is located on the substrate under the action of electric field force of the steady electric field and grow the quantum dots or the quantum wires on the substrate in the position corresponding to the electrode; and adjusting the position of the electrode to control the growth positions of the quantum dots or the quantum wires on the substrate. The method is simple to operate and good in controllable effect; and according to the method disclosed by the invention, controllable growth in any quantum dot or quantum wire position can be realized, and a foundation is laid for processing and manufacturing of quantum devices.
Description
Technical field
The present invention relates to quantum dot or quantum wire field of material preparation, relate in particular to a kind of method of growth quantum point or quantum wire of position-controllable.
Background technology
Because quantum effect is obvious, in physics, be also referred to as quantum dot or quantum wire during yardstick 1～20 nanometer of nano particle or nano wire.Quantum dot or quantum wire array are listed in fields such as area source, display, solar cell, information storage has very application prospects.The location preparation of quantum dot and quantum wire has formed a bottleneck difficult problem to the preparation of quantum device, and the application of quantum device is more extensive, like quantum computer, biochip, nanometer robot etc.
When existing preparation quantum dot or quantum wire material, in most of method, quantum dot or quantum wire position are uncontrollable at random.Template and photoengraving method are controlled to being prepared on the position of quantum dot or quantum wire, but the preparation of template is uncontrollable, and photoengraving is bigger to the quantum effect influence of quantum dot or quantum wire.Content that the person exploring that the preparation of the quantum dot of controllable position or quantum linear array is the nano materials research remains a difficulty to a small amount of number quantum dot and the preparation that needs the quantum wire of shape, the difficult problem that the accurate localization growth is generally acknowledged especially.
Summary of the invention
Embodiment of the present invention provides the method for a kind of controlled generation quantum dot or quantum wire; Can solve the present method for preparing quantum dot or quantum wire material and exist uncontrollablely to quantum dot or quantum wire, quantum dot that makes or quantum wire material can't satisfy the requirement of some application-specific from aspects such as performance, application.
Solving the problems of the technologies described above the technical scheme that is adopted is:
Embodiment of the present invention provides the method for a kind of controlled generation quantum dot or quantum wire, and this method comprises:
The substrate of growth quantum point or quantum wire is set in the solution that is dissolved with quantum dot or quantum wire material, is provided with and substrate lower surface electrodes in contact in said substrate bottom surface;
Between said solution and said electrode, apply voltage and form steady electric field; Make quantum dot or quantum wire material in the solution in the position sedimentation at the place of the electrode on said substrate under the effect of the electric field force of said steady electric field, growth quantum point or quantum wire on the substrate of said electrode institute correspondence position;
Adjust the Position Control quantum dot or the growth position of quantum wire on substrate of said electrode.
In the said method, said method further comprises:
Be adjusted at the size that applies voltage between said solution and the said electrode, the size of control quantum dot or the thickness of quantum wire.
In the said method, said in said solution, the setting between plate electrode and the said electrode applies adjustable voltage.
Plate electrode is set in the solution is connected with the positive pole of power supply, electrode is connected with the negative pole of said power supply.
In the said method, it is 0.1V～60V that the voltage that applies between plate electrode and the said electrode is set in the said solution.
In the said method, the substrate that said substrate adopts thickness to process less than the non-conducting material of millimeter magnitude.
In the said method, said electrodes use metal probe or metal blade.
In the said method, it is the metal probe of sharp-pointed taper that said metal probe adopts the tip.
In the said method, said metal probe or metal blade can be for a plurality of.
Can find out by the above-mentioned technical scheme that provides; In the method that embodiment of the present invention provides; Form steady electric field through between the solution of growth quantum point or quantum wire material and electrode, applying voltage; Quantum dot or quantum wire material in the solution are grown on the substrate of electrode position at the electric field force of steady electric field, thus can through electric field induce substrate need position growth quantum point or quantum wire, reach the purpose of controlled preparation quantum dot or quantum wire.This method is simple to operate, and is controlled effective, can realize the controllable growth of arbitrarily quantum point or quantum wire position, for the processing and manufacturing of quantum device lays the foundation.
Description of drawings
In order to be illustrated more clearly in the technical scheme of the embodiment of the invention; The accompanying drawing of required use is done to introduce simply in will describing embodiment below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skill in the art; Under the prerequisite of not paying creative work, can also obtain other accompanying drawings according to these accompanying drawings.
The sketch map of the method for the controllable growth quantum dot that Fig. 1 provides for the embodiment of the invention;
Fig. 2 is the schematic diagram of embodiment of the invention controllable growth quantum dot or quantum wire;
The controllable growth quantum dot that Fig. 3 provides for the embodiment of the invention or the system schematic of quantum wire;
Each label corresponding components name is called among the figure: the container of 1-dress solution; The 2-substrate; The 3-quantum dot; The 4-metal probe; The 5-negative pole; 6-is anodal; The 7-power supply; The 8-heating wire; Row's solution mouth on the 9-container; The 10-temperature control system.
The specific embodiment
Below in conjunction with specific embodiment the technical scheme among the present invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on embodiments of the invention, those of ordinary skills belong to protection scope of the present invention not making the every other embodiment that is obtained under the creative work prerequisite.
Do to describe in detail further in the face of the embodiment of the invention down.
The embodiment of the invention provides the method for a kind of controlled generation quantum dot or quantum wire, and like Fig. 1, shown in 2, this method comprises:
In the solution that is dissolved with quantum dot or quantum wire material, be provided for the non-conductive substrate of growth quantum point or quantum wire; Electrode (metal probe or metal blade) is set on the substrate bottom surface, electrode (metal probe or metal blade) is contacted with the substrate lower surface;
Plate electrode (being connected with positive source) is set in solution; Go up connection negative pole (being connected) at electrode (metal probe or metal blade) with the negative pole of power supply; Apply voltage (voltage is adjustable voltage) to positive and negative electrode and form steady electric field; Make quantum dot or the synthetic back of quantum wire material in the solution charged, synthetic quantum dot or quantum wire material generate quantum dot or quantum wire with particle form sedimentation on the substrate of electrode (metal probe or metal blade) position; The quantum dot that the position-controllable of adjustment electrode (metal probe or metal blade) is grown on substrate or the position of quantum wire.In the reality, can adjust the position of electrode (metal probe or metal blade), the quantum dot of shape control growth or the position and the shape of quantum wire, and the thickness of the size of quantum dot and quantum wire can be confirmed by the voltage of electrode (metal probe or metal blade).
Electrode (metal probe or metal blade) can adopt sharp-pointed metal probe and metal blade, and metal probe can be a plurality of, and arrangement can confirm as required that metal probe contacts with substrate, and substrate is got over Bao Yuehao, is limited in less than below the millimeter.Metal blade position, shape and quantity are also set as required.Electrode voltage can be controlled in 0.1～60 volt, can confirm that preferred voltage is controlled at 0.1～10V according to quantum dot or quantum wire size needs.In the reality, can adopt system shown in Figure 3 to carry out controllable growth quantum dot or quantum wire, after quantum dot or quantum wire generation; Solution is slowly discharged from leakage fluid dram; Liquid levels is closed leakage fluid dram, through the temperature control system heated substrate near the substrate top surface time; Make remaining liq pass through the thermolysis process volatilization, temperature is 30 ℃～50 ℃ (see figure 3)s.The substrate that will growth be had quantum dot or quantum wire at last improves the adhesive strength of quantum dot or quantum wire through heat treatment.This method is simple to operate, and is controlled effective, thereby makes the quantum wire material of preparing can satisfy multiple requirement of special occasion, can realize the controllable growth of arbitrarily quantum point or quantum wire position, for the processing and manufacturing of quantum device lays the foundation.
The above; Be merely the preferable specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (8)
1. the method for controlled generation quantum dot or quantum wire is characterized in that this method comprises:
The substrate of growth quantum point or quantum wire is set in the solution that is dissolved with quantum dot or quantum wire material, is provided with and substrate lower surface electrodes in contact in said substrate bottom surface;
Between said solution and said electrode, apply voltage and form steady electric field; Make quantum dot or quantum wire material in the solution in the position sedimentation at the place of the electrode on said substrate under the effect of the electric field force of said steady electric field, growth quantum point or quantum wire on the substrate of said electrode institute correspondence position;
Adjust the Position Control quantum dot or the growth position of quantum wire on substrate of said electrode.
2. the method for controlled generation quantum dot according to claim 1 or quantum wire is characterized in that said method further comprises:
Be adjusted at the size that applies voltage between said solution and the said electrode, the size of control quantum dot or the thickness of quantum wire.
3. the method for controlled generation quantum dot according to claim 1 and 2 or quantum wire is characterized in that, said in said solution, the setting between plate electrode and the said electrode applies adjustable voltage.
Plate electrode is set in the solution is connected with the positive pole of power supply, electrode is connected with the negative pole of said power supply.
4. the method for controlled generation quantum dot according to claim 1 and 2 or quantum wire is characterized in that, it is 0.1V～60V that the voltage that applies between plate electrode and the said electrode is set in the said solution.
5. the method for controlled generation quantum dot according to claim 1 or quantum wire is characterized in that, the substrate that said substrate adopts thickness to process less than the non-conducting material of millimeter magnitude.
6. the method for controlled generation quantum dot according to claim 1 or quantum wire is characterized in that, said electrodes use metal probe or metal blade.
7. the method for controlled generation quantum dot according to claim 6 or quantum wire is characterized in that, it is the metal probe of sharp-pointed taper that said metal probe adopts the tip.
8. the method for controlled generation quantum dot according to claim 6 or quantum wire is characterized in that said metal probe or metal blade are a plurality of.
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| CN201110421304.1A CN102431964B (en) | 2011-12-15 | 2011-12-15 | Method for controllable generation of quantum dots or quantum wires |
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| CN201110421304.1A CN102431964B (en) | 2011-12-15 | 2011-12-15 | Method for controllable generation of quantum dots or quantum wires |
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| CN102431964A true CN102431964A (en) | 2012-05-02 |
| CN102431964B CN102431964B (en) | 2014-08-13 |
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Cited By (10)
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| CN105068312A (en) * | 2015-08-06 | 2015-11-18 | 青岛海信电器股份有限公司 | Light conversion film, preparing method thereof and liquid crystal display module |
| CN105668512A (en) * | 2016-01-11 | 2016-06-15 | 江苏师范大学 | Nano-electronic device mounting method |
| CN107790736A (en) * | 2017-10-25 | 2018-03-13 | 江汉大学 | A kind of preparation method of self-catalysis function nano quantum wire |
| CN111427111A (en) * | 2020-03-30 | 2020-07-17 | Tcl华星光电技术有限公司 | Quantum dot patterning method, device and system |
| CN112447916A (en) * | 2019-09-04 | 2021-03-05 | Tcl华星光电技术有限公司 | Preparation method of quantum dot film |
| CN112542536A (en) * | 2019-09-04 | 2021-03-23 | Tcl华星光电技术有限公司 | Manufacturing method of display panel |
| CN112916226A (en) * | 2021-01-25 | 2021-06-08 | 中国计量大学 | Method and device for generating quantum dots and material prepared by using device |
| CN113359347A (en) * | 2021-05-28 | 2021-09-07 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot deposition device |
| CN113745440A (en) * | 2021-08-17 | 2021-12-03 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of quantum dot device |
| US11377723B2 (en) | 2020-03-30 | 2022-07-05 | Tcl China Star Optoelectronics Technology Co., Ltd. | Method of patterning quantum dots, device using same, and system thereof |
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| CN107790736A (en) * | 2017-10-25 | 2018-03-13 | 江汉大学 | A kind of preparation method of self-catalysis function nano quantum wire |
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| US11201287B2 (en) | 2019-09-04 | 2021-12-14 | Tcl China Star Optoelectronics Technology Co., Ltd. | Preparing method of quantum dot film |
| CN112542536B (en) * | 2019-09-04 | 2024-02-27 | Tcl华星光电技术有限公司 | Manufacturing method of display panel |
| CN112447916A (en) * | 2019-09-04 | 2021-03-05 | Tcl华星光电技术有限公司 | Preparation method of quantum dot film |
| CN112542536A (en) * | 2019-09-04 | 2021-03-23 | Tcl华星光电技术有限公司 | Manufacturing method of display panel |
| US11414774B2 (en) | 2019-09-04 | 2022-08-16 | Tcl China Star Optoelectronics Technology Co., Ltd. | Manufacturing method of display panel |
| CN112447916B (en) * | 2019-09-04 | 2022-04-01 | Tcl华星光电技术有限公司 | Preparation method of quantum dot film |
| US11377723B2 (en) | 2020-03-30 | 2022-07-05 | Tcl China Star Optoelectronics Technology Co., Ltd. | Method of patterning quantum dots, device using same, and system thereof |
| WO2021196269A1 (en) * | 2020-03-30 | 2021-10-07 | Tcl华星光电技术有限公司 | Quantum dot patterning method, apparatus and system |
| CN111427111A (en) * | 2020-03-30 | 2020-07-17 | Tcl华星光电技术有限公司 | Quantum dot patterning method, device and system |
| CN112916226A (en) * | 2021-01-25 | 2021-06-08 | 中国计量大学 | Method and device for generating quantum dots and material prepared by using device |
| CN113359347A (en) * | 2021-05-28 | 2021-09-07 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot deposition device |
| CN113359347B (en) * | 2021-05-28 | 2022-12-23 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot deposition device |
| CN113745440A (en) * | 2021-08-17 | 2021-12-03 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of quantum dot device |
| CN113745440B (en) * | 2021-08-17 | 2022-07-12 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of quantum dot device |
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