CN107453600A - A kind of charge pump booster circuit - Google Patents
A kind of charge pump booster circuit Download PDFInfo
- Publication number
- CN107453600A CN107453600A CN201710701153.2A CN201710701153A CN107453600A CN 107453600 A CN107453600 A CN 107453600A CN 201710701153 A CN201710701153 A CN 201710701153A CN 107453600 A CN107453600 A CN 107453600A
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- Prior art keywords
- resistance
- electric capacity
- triode
- diode
- connect
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of charge pump booster circuit, including resistance R3, electric capacity C2, triode Q2, diode D2 and power supply V1, the resistance R3 connects resistance R6 and signal source V3 respectively, the signal source V3 other ends are grounded, resistance R3 other ends connection electric capacity C2, the electric capacity C2 other ends connect resistance R2, diode D2 positive poles and triode Q2 base stages respectively, triode Q2 emitter stages connect diode D2 negative poles, the resistance R2 other ends and earthing power supply V1 positive poles respectively, triode Q2 colelctor electrodes connect electric capacity C3 and triode Q3 colelctor electrodes, triode Q3 grounded emitters respectively.The present invention can realize the voltage superposition of two voltage sources, and the upper down tube of half-bridge drive circuit is controlled using capacity coupled mode in addition, and the supply voltage of such half-bridge is not just influenceed by signal source V3 amplitude.
Description
Technical field
The present invention relates to a kind of booster circuit, specifically a kind of charge pump booster circuit.
Background technology
Charge pump can realize the functions such as boosting, decompression, negative pressure with simple circuit, one of them very extensive purposes
Exactly in the half-bridge circuit being made up of N-channel MOS FET, floating drive voltage is provided for upper bridge arm.Some existing charge pump circuits
During voltage superposition is completed, easily disturbed by signal source.
The content of the invention
It is an object of the invention to provide a kind of charge pump booster circuit, is asked with solve to propose in above-mentioned background technology
Topic.
To achieve the above object, the present invention provides following technical scheme：
A kind of charge pump booster circuit, including resistance R3, electric capacity C2, triode Q2, diode D2 and power supply V1, the resistance R3
Resistance R6 and signal source V3, signal source V3 other ends ground connection are connected respectively, and the resistance R3 other ends connect electric capacity C2, and electric capacity C2 is another
End connects resistance R2, diode D2 positive poles and triode Q2 base stages, triode Q2 emitter stages and connects diode D2 respectively and bear respectively
Pole, the resistance R2 other ends and earthing power supply V1 positive poles, triode Q2 colelctor electrodes connect electric capacity C3 and triode Q3 colelctor electrodes respectively,
Triode Q3 grounded emitters, triode Q3 base stages connect ground connection diode D5 negative poles, grounding resistance R8 and electric capacity C4, electricity respectively
Hold the C4 other ends connection resistance R6 other ends, the electric capacity C3 other ends are connecting diode D3 negative poles and diode D4 just respectively
Pole, diode D4 negative poles connect electric capacity C1 and output end VOUT respectively, and the electric capacity C1 other ends connect earthing power supply V2 positive poles respectively
With diode D3 positive poles.
As the further scheme of the present invention：The signal source V3 is alternating signal source.
As the further scheme of the present invention：The power supply V1 and power supply V2 are dc source.
As further scheme of the invention：Triode Q2 and Q3 form half-bridge drive circuit.
Compared with prior art, the beneficial effects of the invention are as follows：The present invention can realize the voltage superposition of two voltage sources,
The upper down tube of other half-bridge drive circuit is controlled using capacity coupled mode, the supply voltage of such half-bridge just not trusted
Number source V3 amplitude influences.
Brief description of the drawings
Fig. 1 is the circuit diagram of charge pump booster circuit.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Referring to Fig. 1, in the embodiment of the present invention, a kind of charge pump booster circuit, including resistance R3, electric capacity C2, triode
Q2, diode D2 and power supply V1, the resistance R3 connect resistance R6 and signal source V3, signal source V3 other ends ground connection, electricity respectively
Hindering R3 other ends connection electric capacity C2, the electric capacity C2 other ends connect resistance R2, diode D2 positive poles and triode Q2 base stages respectively, and three
Pole pipe Q2 emitter stages connect diode D2 negative poles, the resistance R2 other ends and earthing power supply V1 positive poles, triode Q2 colelctor electrodes respectively
Connect electric capacity C3 respectively and triode Q3 colelctor electrodes, triode Q3 grounded emitters, triode Q3 base stages connect ground connection two respectively
Pole pipe D5 negative poles, grounding resistance R8 and electric capacity C4, the electric capacity C4 other ends connection resistance R6 other ends, the electric capacity C3 other ends point
Not Lian Jie diode D3 negative poles and diode D4 positive poles, diode D4 negative poles connect electric capacity C1 and output end VOUT, electric capacity respectively
The C1 other ends connect earthing power supply V2 positive poles and diode D3 positive poles respectively.
The signal source V3 is alternating signal source.
The power supply V1 and power supply V2 are dc source.
Referring to Fig. 1, VOUT=V1+V2=16V+8V=24V, but voltage does not reach 24V in practical application, and reason is
There is pressure drop above Q2, Q3, D3, D4.
Q2 and Q3 forms half-bridge drive circuit in circuit, and C3 is storage capacitor.When half-bridge drive circuit exports low level,
C3 is charged left negative right positive voltage, magnitude of voltage be 16V-Vd3. when half-bridge drive circuit exports high level, C3 voltage quilt
It is added to above V1, now the voltage of C3 right-hand members is 8V+16V-Vd3, about 23.3V.C3 can be charged by D4 to C1.So
VOUT voltage is exactly 16V+8V-Vd3-Vd4, about 23V
The characteristics of this circuit, can be achieved on the voltage superposition of two voltage sources, as VOUT voltage is about：V1+V2, in addition partly
The upper down tube of bridge drive circuit is controlled using capacity coupled mode, and the supply voltage of such half-bridge is not just by signal source V3
Amplitude influence.V1 can be free voltage.As long as this voltage is not higher than Q2, the maximum differential pressure of Q3 emitter stage-colelctor electrode
Can.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires rather than described above limits, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Any reference in claim should not be considered as to the involved claim of limitation.
Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each embodiment is only wrapped
Containing an independent technical scheme, this narrating mode of specification is only that those skilled in the art should for clarity
Using specification as an entirety, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
It is appreciated that other embodiment.
Claims (3)
1. a kind of charge pump booster circuit, including resistance R3, electric capacity C2, triode Q2, diode D2 and power supply V1, its feature exist
In the resistance R3 connects resistance R6 and signal source V3, signal source V3 other ends ground connection, resistance R3 other ends connection electric capacity respectively
C2, electric capacity the C2 other end connect resistance R2, diode D2 positive poles and triode Q2 base stages respectively, and triode Q2 emitter stages connect respectively
Diode D2 negative poles, the resistance R2 other ends and earthing power supply V1 positive poles are connect, triode Q2 colelctor electrodes connect electric capacity C3 and three respectively
Pole pipe Q3 colelctor electrodes, triode Q3 grounded emitters, triode Q3 base stages connect ground connection diode D5 negative poles, grounding resistance respectively
R8 and electric capacity C4, electric capacity the C4 other end connect the resistance R6 other ends, and the electric capacity C3 other ends connect diode D3 negative poles respectively
With diode D4 positive poles, diode D4 negative poles connect electric capacity C1 and output end VOUT respectively, and the electric capacity C1 other ends connect respectively to be connect
Ground power supply V2 positive poles and diode D3 positive poles.
2. charge pump booster circuit according to claim 1, it is characterised in that the signal source V3 is alternating signal source.
3. charge pump booster circuit according to claim 1, it is characterised in that the power supply V1 and power supply V2 are direct current
Source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710701153.2A CN107453600A (en) | 2017-08-16 | 2017-08-16 | A kind of charge pump booster circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710701153.2A CN107453600A (en) | 2017-08-16 | 2017-08-16 | A kind of charge pump booster circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107453600A true CN107453600A (en) | 2017-12-08 |
Family
ID=60492515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710701153.2A Pending CN107453600A (en) | 2017-08-16 | 2017-08-16 | A kind of charge pump booster circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107453600A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108111068A (en) * | 2017-12-29 | 2018-06-01 | 北京航天飞腾装备技术有限责任公司 | A kind of universal steering engine controls integrated device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101473531A (en) * | 2006-06-22 | 2009-07-01 | SiGe半导体公司 | Integrated implementation of a voltage boost follower and method therefor |
| CN105144558A (en) * | 2013-04-25 | 2015-12-09 | 三菱电机株式会社 | Charge pump circuit |
-
2017
- 2017-08-16 CN CN201710701153.2A patent/CN107453600A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101473531A (en) * | 2006-06-22 | 2009-07-01 | SiGe半导体公司 | Integrated implementation of a voltage boost follower and method therefor |
| CN105144558A (en) * | 2013-04-25 | 2015-12-09 | 三菱电机株式会社 | Charge pump circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108111068A (en) * | 2017-12-29 | 2018-06-01 | 北京航天飞腾装备技术有限责任公司 | A kind of universal steering engine controls integrated device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171208 |
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| RJ01 | Rejection of invention patent application after publication |