CN107452589B - 等离子体处理装置以及等离子体处理方法 - Google Patents
等离子体处理装置以及等离子体处理方法 Download PDFInfo
- Publication number
- CN107452589B CN107452589B CN201710327016.7A CN201710327016A CN107452589B CN 107452589 B CN107452589 B CN 107452589B CN 201710327016 A CN201710327016 A CN 201710327016A CN 107452589 B CN107452589 B CN 107452589B
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- Prior art keywords
- plasma
- carrier group
- carrier
- peak portion
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- 238000003672 processing method Methods 0.000 title claims abstract description 9
- 239000000969 carrier Substances 0.000 claims abstract description 76
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- 230000003321 amplification Effects 0.000 claims description 10
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- 230000002194 synthesizing effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 56
- 239000007789 gas Substances 0.000 description 40
- 150000002500 ions Chemical class 0.000 description 39
- 238000005530 etching Methods 0.000 description 20
- 238000001020 plasma etching Methods 0.000 description 14
- 230000001965 increasing effect Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
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- 230000014509 gene expression Effects 0.000 description 7
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- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
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- 238000012423 maintenance Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 229910052756 noble gas Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 230000001131 transforming effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32266—Means for controlling power transmitted to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016094340 | 2016-05-10 | ||
| JP2016-094340 | 2016-05-10 | ||
| JP2017-092199 | 2017-05-08 | ||
| JP2017092199A JP6817889B2 (ja) | 2016-05-10 | 2017-05-08 | プラズマ処理装置及びプラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107452589A CN107452589A (zh) | 2017-12-08 |
| CN107452589B true CN107452589B (zh) | 2019-12-06 |
Family
ID=60321583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710327016.7A Active CN107452589B (zh) | 2016-05-10 | 2017-05-10 | 等离子体处理装置以及等离子体处理方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6817889B2 (ja) |
| KR (1) | KR102341913B1 (ja) |
| CN (1) | CN107452589B (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110061819A (zh) * | 2018-01-19 | 2019-07-26 | 华为技术有限公司 | 一种信号传输方法 |
| JP7122268B2 (ja) * | 2019-02-05 | 2022-08-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN116844934A (zh) | 2019-02-05 | 2023-10-03 | 东京毅力科创株式会社 | 等离子体处理装置 |
| JP6797273B2 (ja) * | 2019-02-05 | 2020-12-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007035597A (ja) * | 2005-07-29 | 2007-02-08 | Hitachi High-Technologies Corp | プラズマ処理装置および処理方法 |
| CN101156314A (zh) * | 2005-04-04 | 2008-04-02 | 东京毅力科创株式会社 | 微波发生装置和微波发生方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100610413B1 (ko) * | 1997-09-17 | 2006-08-09 | 동경 엘렉트론 주식회사 | Ｒｆ 플라즈마 시스템에서 아크를 검출하고 방지하기 위한디바이스 및 방법 |
| US6351683B1 (en) * | 1997-09-17 | 2002-02-26 | Tokyo Electron Limited | System and method for monitoring and controlling gas plasma processes |
| CN1129229C (zh) * | 1997-09-17 | 2003-11-26 | 东京电子株式会社 | 电抗匹配系统及方法 |
| US7405521B2 (en) | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
| US7663319B2 (en) * | 2004-02-22 | 2010-02-16 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
| JP6512962B2 (ja) * | 2014-09-17 | 2019-05-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2017
- 2017-05-08 JP JP2017092199A patent/JP6817889B2/ja active Active
- 2017-05-10 CN CN201710327016.7A patent/CN107452589B/zh active Active
- 2017-05-10 KR KR1020170058071A patent/KR102341913B1/ko active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101156314A (zh) * | 2005-04-04 | 2008-04-02 | 东京毅力科创株式会社 | 微波发生装置和微波发生方法 |
| JP2007035597A (ja) * | 2005-07-29 | 2007-02-08 | Hitachi High-Technologies Corp | プラズマ処理装置および処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170126810A (ko) | 2017-11-20 |
| JP2017204467A (ja) | 2017-11-16 |
| CN107452589A (zh) | 2017-12-08 |
| JP6817889B2 (ja) | 2021-01-20 |
| KR102341913B1 (ko) | 2021-12-21 |
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|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |