CN107441913A - The exhaust treatment system and processing method of polysilicon production process - Google Patents
The exhaust treatment system and processing method of polysilicon production process Download PDFInfo
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- CN107441913A CN107441913A CN201610368429.5A CN201610368429A CN107441913A CN 107441913 A CN107441913 A CN 107441913A CN 201610368429 A CN201610368429 A CN 201610368429A CN 107441913 A CN107441913 A CN 107441913A
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- tail gas
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/77—Liquid phase processes
- B01D53/78—Liquid phase processes with gas-liquid contact
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/68—Halogens or halogen compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/204—Inorganic halogen compounds
Abstract
The invention discloses a kind of exhaust treatment system of polysilicon production process and processing method, the system includes：Tail gas buffer, for collecting and caching the tail gas of polysilicon production process；First hydraulic ejector, is connected with tail gas buffer, for carrying out injection acceleration to tail gas；Elution device, it is connected with the first hydraulic ejector, for by eluting the chlorosilane, the hydrogen chloride that remove in the tail gas after overspray accelerates.After production of polysilicon tail gas is buffered by tail gas buffer, then sprayed and accelerated by the first hydraulic ejector, spray hydrolysis process has been carried out in the first hydraulic ejector inner exhaust gas and swiftly flowing water, most of chlorosilane in tail gas can be hydrolyzed, accelerate flowing velocity of the tail gas in the admission line of elution device, avoid the delay in admission line, so as to prevent to block in admission line generation hydrolysate, improve the service efficiency of exhaust treatment system, maintenance cost is reduced, improves vent gas treatment efficiency.
Description
Technical field
The invention belongs to technical field of polysilicon production, and in particular to a kind of exhaust treatment system of polysilicon production process
And processing method.
Background technology
In polysilicon production process, because the productions such as normal production, the displacement of checking maintenance system need, each process (bag
Include chlorosilane purification, the recovery of reduction tail gas dry process, the reduction of reduction tail gas, chlorosilane storage) all need to discharge a certain amount of tail gas, this
Containing chlorosilane gas, hydrogen, nitrogen, hydrogen chloride etc. in a little tail gas, need to discharge after treatment.
Handling process traditional at present is to enter tail gas elution device after each operation emission is collected, with water or alkali lye
After the elution such as the hydrogen chloride in tail gas, chlorosilane, hydrolysis, neutralizing, hydrogen and nitrogen are directly vented.But use at the method
Tail gas is managed, elution device easily causes admission line by hydrolyzing chlorosilane thing because as the size of tail gas amount, admission pressure fluctuate
Block, bring substantial amounts of pipeline cleaning maintenance work, increase labour cost.
The content of the invention
The technical problems to be solved by the invention are for above shortcomings in the prior art, there is provided a kind of polysilicon
The exhaust treatment system and processing method of production technology, the system accelerate flowing speed of the tail gas in the admission line of elution device
Degree, avoids the delay in the admission line of elution device, so as to which the admission line prevented in elution device produces hydrolysate
And admission line is blocked, improve the service efficiency of exhaust treatment system.
Technical scheme is to provide a kind of vent gas treatment of polysilicon production process used by solving present invention problem
System, including：
Tail gas buffer, for collecting and caching the tail gas of polysilicon production process；
First hydraulic ejector, it is connected with the tail gas buffer, first hydraulic ejector is used to carry out tail gas
Injection accelerates；
Elution device, it is connected with first hydraulic ejector, the elution device is used to remove by spray by eluting
Chlorosilane, the hydrogen chloride penetrated in the tail gas after accelerating.
The tail gas of polysilicon production process includes nitrogen, hydrogen, hydrogen chloride and gaseous chlorosilane, the chlorosilane bag
Include：Silicon tetrachloride, trichlorosilane, dichlorosilane and other silanes.
Preferably, the elution device includes：
One-level eluting column, it is connected with first hydraulic ejector, the one-level eluting column is used for using acid or neutral
The aqueous solution carry out one-level elution；
Two-step washing tower, it is connected with the one-level eluting column, the two-step washing tower is used to carry out two using the first alkali lye
Level elution.
Preferably, the exhaust treatment system of described polysilicon production process, in addition to：
Second hydraulic ejector, it is connected respectively with the one-level eluting column, the two-step washing tower, the second waterpower spray
Emitter is used to carry out injection acceleration to the tail gas for being flowed into the two-step washing tower by the one-level eluting column.
Preferably, the exhaust treatment system of described polysilicon production process, in addition to：
Water sealed tank, it is connected with the elution device, tail gas is vented after the water sealed tank, and the water sealed tank is used to prevent
Gas suck-back.
The present invention also provides a kind of exhaust gas treating method of polysilicon production process, comprises the following steps：
1) injection acceleration is carried out to the tail gas before elution using the first hydraulic ejector；
2) by eluting the chlorosilane, the hydrogen chloride that remove in the tail gas after overspray accelerates.
Preferably, the pressure of the power source used in first hydraulic ejector is 0.1~0.5Mpa.
Preferably, the power source used in first hydraulic ejector is water.
Preferably, the power source used in first hydraulic ejector is industrial water.
Preferably, the pH value of the industrial water is 4~7.
Preferably, the step 2) elution specifically includes：
Step 21) carries out one-level elution to tail gas first, using the acid or neutral aqueous solution；Preferably, one-level is drenched
The pH value for washing the aqueous solution used is 4~7.
Step 22) reuses the first alkali lye and carries out two-step washing to tail gas.
Preferably, the concentration of the first alkali lye described in the step 22) is 15~20wt%.
Preferably, step 2i is also included between the step 21) and step 22)) to the tail gas before progress two-step washing
Injection acceleration is carried out using the second hydraulic ejector.
Preferably, the pressure of power source used in second hydraulic ejector is 0.1~0.5Mpa.
Preferably, power source used in second hydraulic ejector is the second alkali lye.
Preferably, the concentration of second alkali lye is 15~20wt%.
After production of polysilicon tail gas is buffered by tail gas buffer in the present invention, then sprayed by the first hydraulic ejector
Acceleration is penetrated, spray hydrolysis process has been carried out in the first hydraulic ejector inner exhaust gas and swiftly flowing water, can will be big in tail gas
Part chlorosilane is hydrolyzed, not coagulating containing nitrogen, hydrogen, hydrogen chloride and the chlorosilane that does not elute in obtained tail gas
Gas, tail gas rapidly enter elution device again, accelerate flowing velocity of the tail gas in the admission line of elution device, avoid and drenching
The delay of the admission line of cleaning device, so as to which the admission line prevented in elution device produces hydrolysate and blocks air inlet pipe
Road, the service efficiency of exhaust treatment system is improved, reduce the pipe-line maintenance cost of exhaust treatment system, improve at tail gas
Manage efficiency.
Brief description of the drawings
Fig. 1 is the structural representation of the exhaust treatment system of the polysilicon production process in the embodiment of the present invention 2.
1- tail gas buffers in figure；The hydraulic ejectors of 2- first；21- the first power source inlets；3- elution devices；31- mono-
Level eluting column；The tower reactor of 311- one-level eluting columns；312- first entrances；313- second entrances；32- two-step washing towers；321- bis-
The tower reactor of level eluting column；The entrances of 322- the 3rd；The entrances of 323- the 4th；The hydraulic ejectors of 4- second；41- the second power source inlets；
5- two-step washing tower circulating pumps；6- water sealed tanks.
Embodiment
To make those skilled in the art more fully understand technical scheme, below in conjunction with the accompanying drawings and specific embodiment party
Formula is described in further detail to the present invention.
Embodiment 1
The present embodiment provides a kind of exhaust treatment system of polysilicon production process, including：
Tail gas buffer, for collecting and caching the tail gas of polysilicon production process；
First hydraulic ejector, is connected with tail gas buffer, and the first hydraulic ejector is used to carry out injection acceleration to tail gas；
Elution device, it is connected with the first hydraulic ejector, elution device is used to remove after overspray accelerates by eluting
Tail gas in chlorosilane, hydrogen chloride.
The present embodiment also provides a kind of exhaust treatment system using above-mentioned polysilicon production process and carries out vent gas treatment
Method, comprise the following steps：
1) collected by tail gas buffer and cache the tail gas of polysilicon production process；
2) injection acceleration is carried out to the tail gas before elution using the first hydraulic ejector；
3) chlorosilane, the hydrogen chloride in the tail gas after overspray accelerates are removed by elution device elution.
After production of polysilicon tail gas is buffered by tail gas buffer in the present embodiment, then pass through the first hydraulic ejector
Injection accelerates, and tail gas has carried out spray hydrolysis process with swiftly flowing water, most of chlorosilane in tail gas can be entered into water-filling
Solve, the fixed gas containing nitrogen, hydrogen, hydrogen chloride and the chlorosilane not eluted in obtained tail gas, tail gas rapidly enters again
Elution device, flowing velocity of the tail gas in the admission line of elution device is accelerated, avoids the admission line in elution device
Delay, so as to prevented elution device admission line produce hydrolysate and block admission line, improve vent gas treatment
The service efficiency of system, the pipe-line maintenance cost of exhaust treatment system is reduced, improves vent gas treatment efficiency.
Embodiment 2
As shown in figure 1, the present embodiment provides a kind of exhaust treatment system of polysilicon production process, including：
Tail gas buffer 1, for collecting and caching the tail gas of polysilicon production process；
First hydraulic ejector 2, is connected with tail gas buffer 1, and the first hydraulic ejector 2 is used to tail gas spray to add
Speed；The first power source inlet 21 is provided with first hydraulic ejector 2, the first waterpower is inputted by the first power source inlet 21
The power source of injector 2, the power source of the first hydraulic ejector 2 carry out injection to the tail gas of one-level eluting column 31 to be flowed into and added
Speed.
Elution device 3, elution device 3 are used for by eluting the chlorosilane, the chlorine that remove in the tail gas after overspray accelerates
Change hydrogen.Wherein elution device 3 includes：
One-level eluting column 31, it is connected with the first hydraulic ejector 2, one-level eluting column 31 is used for using acid or neutral water
Solution carries out one-level elution；First entrance 312 is provided with one-level eluting column 31, the first entrance 312 is arranged at one-level elution
The middle part of tower 31, the outlet of the first hydraulic ejector 2 are connected with the first entrance 312, after the injection of the first hydraulic ejector 2
Tail gas and injection liquid one-level eluting column 31 is entered by first entrance 312.The middle and upper part of one-level eluting column 31 is provided with second and entered
Mouth 313, pass through the second entrance 313 and input the acid or neutral aqueous solution of leacheate.
Second hydraulic ejector 4, is connected with one-level eluting column 31, and the second hydraulic ejector 4 is used for by one-level eluting column
31 tail gas for being flowed into two-step washing tower 32 carry out injection acceleration；The second power source inlet is provided with second hydraulic ejector 4
41, the power source of the second hydraulic ejector 4, the power source of the second hydraulic ejector 4 are inputted by the second power source inlet 41
Injection acceleration is carried out to the tail gas of two-step washing tower 32 to be flowed into.
Two-step washing tower 32, it is connected with the second hydraulic ejector 4, two-step washing tower 32 is used to carry out two using the first alkali lye
Level elution；The 3rd entrance 322 is provided with two-step washing tower 32, the 3rd entrance 322 is arranged at the middle part of two-step washing tower 32,
The outlet of second hydraulic ejector 4 is connected with the 3rd entrance 322, tail gas and spray after the injection of the second hydraulic ejector 4
Penetrate liquid and two-step washing tower 32 is entered by the 3rd entrance 322.The middle and upper part of two-step washing tower 32 is provided with the 4th entrance 323, passes through
4th entrance 323 inputs the alkali lye of leacheate first.Specifically, the vent gas treatment system of the polysilicon production process in the present embodiment
System also includes two-step washing tower circulating pump 5, two-step washing tower circulating pump 5 tower reactor 321 with two-step washing tower, the 4th entrance respectively
323 connections, two-step washing tower circulating pump 5 are used for the leacheate of the tower reactor 321 of two-step washing tower to be pumped into the 4th entrance 323
In two-step washing.
Water sealed tank 6, it is connected with two-step washing tower 32, tail gas is vented after water sealed tank 6, and water sealed tank 6 is used to prevent gas
Suck-back.
The present embodiment also provides a kind of exhaust treatment system using above-mentioned polysilicon production process and carries out vent gas treatment
Method, comprise the following steps：
1) collected by tail gas buffer 1 and cache the tail gas of polysilicon production process；
2) injection acceleration is carried out to the tail gas before elution using the first hydraulic ejector 2；Wherein, the first hydraulic ejector 2
The pressure of power source used is 0.3Mpa, and the power source used in the first hydraulic ejector 2 is industrial water, the industrial water
PH value is 4.Certainly, the present invention is not limited thereto, and the power source used in the first hydraulic ejector 2 can also be other types of
Water.
3) one-level elution is carried out to tail gas using the acid or neutral aqueous solution in one-level eluting column 31.One-level elutes institute
The pH value of the aqueous solution is 4.The leacheate of one-level elution is alternatively the suspension that the tower reactor 311 in one-level eluting column is collected into
Recovered liquid after oil removal is removed in press filtration.Recovered liquid is either subjected to pH value regulation again, can be by adding fresh water
Or the pH value of recovered liquid is adjusted using the mode of the leacheate in two-step washing tower 32.And the leaching of one-level eluting column 31
Washing lotion reusable edible after treatment, reduces rate of water make-up and efflux wastewater amount, the processing for reducing the waste water of lower procedure is born
Lotus, further reduce production integrated cost.
4) injection acceleration is carried out using the second hydraulic ejector 4 to the tail gas before progress two-step washing.Second water-jet
The pressure of power source used in device 4 is 0.3Mpa.Preferably, power source used in the second hydraulic ejector 4 is the second alkali lye.Its
In, the concentration of the second alkali lye is 20wt%.
5) two-step washing is carried out to tail gas using the first alkali lye in two-step washing tower 32 again.Removed by eluting by spray
Chlorosilane, the hydrogen chloride penetrated in the tail gas after accelerating.Wherein, the concentration of the first alkali lye is 20wt%.
6) tail gas is vented after water sealed tank 6, water sealed tank 6 is used to prevent gas suck-back.
The tail gas of polysilicon production process includes nitrogen, hydrogen, hydrogen chloride and gaseous chlorosilane, the chlorosilane bag
Include：Silicon tetrachloride, trichlorosilane, dichlorosilane and other silanes.The method of vent gas treatment in the present embodiment：By polycrystalline
After silicon produces tail gas by the buffering of tail gas buffer 1, then sprayed and accelerated by the first hydraulic ejector 2, sprayed in the first waterpower
The inner exhaust gas of emitter 2 has carried out spray hydrolysis process with swiftly flowing water, and most of chlorosilane in tail gas can be hydrolyzed,
Fixed gas containing nitrogen, hydrogen, hydrogen chloride and the chlorosilane not eluted in obtained tail gas, tail gas rapidly enter one-level again
Eluting column 31, flowing velocity of the tail gas in the admission line of one-level eluting column 31 is accelerated, avoids the air inlet in elution device 3
The delay of pipeline, so as to which the admission line prevented in elution device 3 produces hydrolysate and blocks admission line, improves tail gas
The service efficiency of processing system, the maintenance cost of the admission line of one-level eluting column 31 is reduced, improve vent gas treatment efficiency.
It is interior using acid or neutrality water-soluble into one-level eluting column 31 after tail gas is accelerated by the first hydraulic ejector 2
Liquid carries out one-level elution to tail gas, and reaction of the tail gas in one-level eluting column 31 mainly includes：
SiCl4+4H2O==SiO2·2H2O+4HCl
SiHCl3+4H2O==SiO2·2H2O+H2↑+3HCl
SiH2Cl2+4H2O==SiO2·2H2O+2H2↑+2HCl
Chlorosilane in the tail gas it can be seen from above-mentioned reaction equation can be hydrolyzed, and the hydrogen chloride in tail gas
And hydrogen chloride caused by hydrolysis can largely be dissolved in water, so as to complete a large amount of chlorine in the tail gas discharged in polysilicon production process
The processing of silane and hydrogen chloride；Meanwhile the silica suspension of generation can conveniently carry out separating treatment, silica suspends
Thing carries out press filtration with isolated silica filter cake, and obtains supernatant, and thus, isolated silica filter cake can be worked as
General solid waste processing, to environment non-hazardous.By the chlorine in the fixed gas in tail gas after one-level eluting column 31 is interior by elution
Silane hydrolyzate carries out elution absorption into silica, hydrogen chloride, obtains containing nitrogen, hydrogen, a small amount of hydrogen chloride and chlorosilane
Fixed gas, so as to significantly reduce the consumption of the alkali lye of leacheate first of follow-up middle two-step washing tower 32, cost is reduced, and
And the leacheate of one-level eluting column 31 reusable edible after treatment, the processing load of the waste water of lower procedure is reduced, enters one
Step reduces production integrated cost.Tail gas enters back into the second hydraulic ejector 4, in tail gas and the second hydraulic ejector 4 in high speed
Second alkali lye of flowing has carried out spray hydrolysis process, the hydrogen chloride of part and the fixed gas of chlorosilane caning absorb in tail gas,
Tail gas enters back into two-step washing tower 32, accelerate tail gas export in one-level eluting column 31, the admission line of two-step washing tower 32
Flowing velocity, delay of the tail gas in the admission line of two-step washing tower 32 is avoided, so as to prevent in two-step washing tower 32
The chlorosilane that admission line is produced in tail gas occurs hydrolysis generation hydrolysate with caused steam in one-level eluting column 31 and is attached to
Admission line and block admission line, so as to improve the service efficiency of exhaust treatment system, reduce two-step washing tower 32
Admission line maintenance cost, improve vent gas treatment efficiency.
After the acceleration of the second hydraulic ejector 4, the tail gas after acceleration is rapidly entered in two-step washing tower 32 and used tail gas
First alkali lye carries out two-step washing, and the reaction in two-step washing tower 32 includes：
SiHCl3+(n+2)H2O=SiO2·nH2O+3HCl+H2↑
SiHCl3+ 5NaOH=Na2SiO3+3NaCl+2H2O+H2↑
SiCl4+(n+2)H2O=SiO2·nH2O+4HCl
SiCl4+(n+2)H2O=SiO2·nH2O+4HCl
SiCl4+ 6NaOH=Na2SiO3+4NaCl+3H2O
SiH2Cl2+(n+2)H2O=SiO2·nH2O+2HCl+2H2↑
SiH2Cl2+ 4NaOH=Na2SiO3+2NaCl+2H2↑+H2O
NaOH+HCl=NaCl+H2O
The hydrogen chloride for not fully absorbing the previous stage elution of absorption during two-step washing in two-step washing tower 32
With the fixed gas of chlorosilane, the tail gas containing nitrogen, hydrogen is obtained, then after water sealed tank 6, tail gas can be directly vented.
Embodiment 3
The exhaust treatment system that the present embodiment also provides a kind of polysilicon production process using in embodiment 2 carries out tail gas
The method of processing, comprises the following steps：
1) collected by tail gas buffer and cache the tail gas of polysilicon production process；
2) injection acceleration is carried out to the tail gas before elution using the first hydraulic ejector；Wherein, the first hydraulic ejector institute
The pressure of power source is 0.1Mpa, and the power source used in the first hydraulic ejector is industrial water, the pH of the industrial water
It is worth for 5.Certainly, the present invention is not limited thereto, and the power source used in the first hydraulic ejector can also be other types of water.
3) one-level elution is carried out to tail gas using the acid or neutral aqueous solution in one-level eluting column.Used in one-level elution
The aqueous solution pH value be 5.
4) injection acceleration is carried out using the second hydraulic ejector to the tail gas before progress two-step washing.Second hydraulic ejector
The pressure of power source used is 0.1Mpa.Preferably, power source used in the second hydraulic ejector is the second alkali lye.Wherein,
Two alkali lye are 15wt% sodium hydroxide solution.
5) two-step washing is carried out to tail gas using the first alkali lye in two-step washing tower again.Removed by eluting through overspray
The chlorosilane in tail gas, hydrogen chloride after acceleration.Wherein, the first alkali lye is 15wt% sodium hydroxide solution.
6) tail gas is vented after water sealed tank, water sealed tank is used to prevent gas suck-back.
Embodiment 4
The exhaust treatment system that the present embodiment also provides a kind of polysilicon production process using in embodiment 2 carries out tail gas
The method of processing, comprises the following steps：
1) collected by tail gas buffer and cache the tail gas of polysilicon production process；
2) injection acceleration is carried out to the tail gas before elution using the first hydraulic ejector；Wherein, the first hydraulic ejector institute
The pressure of power source is 0.5Mpa, and the power source used in the first hydraulic ejector is industrial water, the pH of the industrial water
It is worth for 7.Certainly, the present invention is not limited thereto, and the power source used in the first hydraulic ejector can also be other types of water.
3) one-level elution is carried out to tail gas using the acid or neutral aqueous solution.The pH value of the one-level elution aqueous solution used
For 7.
4) injection acceleration is carried out using the second hydraulic ejector to the tail gas before progress two-step washing.Second hydraulic ejector
The pressure of power source used is 0.5Mpa.Preferably, power source used in the second hydraulic ejector is the second alkali lye.Wherein,
Two alkali lye are 18wt% aqua calcis.
5) reuse the first alkali lye and two-step washing is carried out to tail gas.Removed by eluting in the tail gas after overspray accelerates
Chlorosilane, hydrogen chloride.Wherein, the first alkali lye is 18wt% aqua calcis.
6) tail gas is vented after water sealed tank, water sealed tank is used to prevent gas suck-back.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (14)
- A kind of 1. exhaust treatment system of polysilicon production process, it is characterised in that including：Tail gas buffer, for collecting and caching the tail gas of polysilicon production process；First hydraulic ejector, it is connected with the tail gas buffer, first hydraulic ejector is used to spray tail gas Accelerate；Elution device, it is connected with first hydraulic ejector, the elution device is used to through overspray add by eluting to remove The chlorosilane in tail gas, hydrogen chloride after speed.
- 2. the exhaust treatment system of polysilicon production process according to claim 1, it is characterised in that the elution device Including：One-level eluting column, it is connected with first hydraulic ejector, the one-level eluting column is used for using acid or neutral water Solution carries out one-level elution；Two-step washing tower, it is connected with the one-level eluting column, the two-step washing tower is used to carry out two level leaching using the first alkali lye Wash.
- 3. the exhaust treatment system of polysilicon production process according to claim 2, it is characterised in that also include：Second hydraulic ejector, it is connected respectively with the one-level eluting column, the two-step washing tower, second hydraulic ejector For carrying out injection acceleration to the tail gas that the two-step washing tower is flowed into by the one-level eluting column.
- 4. the exhaust treatment system of the polysilicon production process according to claims 1 to 3 any one, it is characterised in that Also include：Water sealed tank, it is connected with the elution device, tail gas is vented after the water sealed tank, and the water sealed tank is used to prevent gas Suck-back.
- 5. a kind of exhaust gas treating method of polysilicon production process, it is characterised in that comprise the following steps：1) injection acceleration is carried out to the tail gas before elution using the first hydraulic ejector；2) by eluting the chlorosilane, the hydrogen chloride that remove in the tail gas after overspray accelerates.
- 6. the exhaust gas treating method of polysilicon production process according to claim 5, it is characterised in that first waterpower The pressure of power source used in injector is 0.1~0.5Mpa.
- 7. the exhaust gas treating method of polysilicon production process according to claim 5, it is characterised in that first waterpower Power source used in injector is water.
- 8. the exhaust gas treating method of polysilicon production process according to claim 7, it is characterised in that first waterpower Power source used in injector is industrial water.
- 9. the exhaust gas treating method of polysilicon production process according to claim 5, it is characterised in that the step 2) leaching Washing specifically includes：Step 21) carries out one-level elution to tail gas first, using the acid or neutral aqueous solution；Step 22) reuses the first alkali lye and carries out two-step washing to tail gas.
- 10. the exhaust gas treating method of polysilicon production process according to claim 9, it is characterised in that the step 22) Described in the concentration of the first alkali lye be 15~20wt%.
- 11. the exhaust gas treating method of polysilicon production process according to claim 9, it is characterised in that the step 21) Also include step 2i between step 22)) to carry out two-step washing before tail gas using the second hydraulic ejector carry out injection plus Speed.
- 12. the exhaust gas treating method of polysilicon production process according to claim 11, it is characterised in that second water The pressure of power source used in power injector is 0.1~0.5Mpa.
- 13. the exhaust gas treating method of polysilicon production process according to claim 11, it is characterised in that second water Power source used in power injector is the second alkali lye.
- 14. the exhaust gas treating method of polysilicon production process according to claim 13, it is characterised in that second alkali The concentration of liquid is 15~20wt%.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109092041A (en) * | 2018-10-17 | 2018-12-28 | 中国恩菲工程技术有限公司 | Elution device for hydrogenated tail gas emptying |
| CN110252091A (en) * | 2019-05-29 | 2019-09-20 | 华陆工程科技有限责任公司 | A kind of step absorption technique handling methylchlorosilane tail gas |
| CN110314515A (en) * | 2019-04-29 | 2019-10-11 | 新疆大全新能源股份有限公司 | The processing system and processing method of silicon powder residue in a kind of production of trichlorosilane |
| CN110917854A (en) * | 2019-12-04 | 2020-03-27 | 西安奕斯伟硅片技术有限公司 | Tail gas treatment device |
| CN111013362A (en) * | 2019-12-30 | 2020-04-17 | 武汉新硅科技潜江有限公司 | Tail gas treatment system in chlorosilane production |
| CN113044848A (en) * | 2019-12-27 | 2021-06-29 | 亚洲硅业(青海)股份有限公司 | Polysilicon tail gas treatment and recovery system and method |
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| CN110252091B (en) * | 2019-05-29 | 2021-11-23 | 华陆工程科技有限责任公司 | Cascade absorption process for treating methyl chlorosilane tail gas |
| CN110917854A (en) * | 2019-12-04 | 2020-03-27 | 西安奕斯伟硅片技术有限公司 | Tail gas treatment device |
| CN113044848A (en) * | 2019-12-27 | 2021-06-29 | 亚洲硅业(青海)股份有限公司 | Polysilicon tail gas treatment and recovery system and method |
| CN113044848B (en) * | 2019-12-27 | 2023-03-28 | 亚洲硅业(青海)股份有限公司 | Polysilicon tail gas treatment and recovery system and method |
| CN111013362A (en) * | 2019-12-30 | 2020-04-17 | 武汉新硅科技潜江有限公司 | Tail gas treatment system in chlorosilane production |
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