CN107437514B - Method for monitoring defects of product measurement area - Google Patents
Method for monitoring defects of product measurement area Download PDFInfo
- Publication number
- CN107437514B CN107437514B CN201710797272.2A CN201710797272A CN107437514B CN 107437514 B CN107437514 B CN 107437514B CN 201710797272 A CN201710797272 A CN 201710797272A CN 107437514 B CN107437514 B CN 107437514B
- Authority
- CN
- China
- Prior art keywords
- measurement
- defect detection
- area
- defect
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention provides a method for monitoring defects of a product measurement area, which comprises the following steps: setting a measurement area selected by a measurement station as a defect detection area; according to the measurement samples selected by the chip in the site measurement process, the defect detection program takes all the measurement samples as defect detection samples; repeatedly defining different measuring areas as defect detection areas for each step of measurement of key manufacture, and defining a sample needing to be measured as a defect detection sample; defining the sequence arrangement for comparing each defect detection sample in the defect detection program; setting the sensitivity of all stations aiming at the defect detection program of the measurement area to complete the defect detection program of each measurement area; and detecting defects before the chip is manufactured to the measurement manufacturing, and finding whether the measurement area has abnormality or not. The invention is used for monitoring the defect conditions of all the measuring areas of the product, thereby quickly finding the defect abnormity of the measuring areas and improving the production working efficiency.
Description
Technical Field
The present invention relates to the field of semiconductor integrated circuit manufacturing, and more particularly, to a method for monitoring defects in a product measurement area. The invention belongs to the field of semiconductor yield improvement, and relates to a new method for setting defect detection areas of measurement areas of all sites of different products and detecting defects of related measurement areas of the products at different sites.
Background
The semiconductor industry is manufacturing more and more, and the line width of products is continuously decreasing. The product production process contains the different production processes of hundred steps above, all need carry out quality monitoring to every step production process, and the industry adopts generally to carry out thickness, dosage, critical dimension size and appearance to this production process and carries out quantitative determination after important production is made. Different circuit patterns are generally selected on chips for data collection aiming at different manufacture and different detection items, and the circuit structures are mostly designed on a scrubber line between unit chips (Single chips), as shown in fig. 1. The existing defect detection method generally adopts comparison between unit chips to find whether defects exist, and the scrubber line between the unit chips is not contained in the defect detection area. In the production process, the normal data collection in the measuring process is influenced by the defect of a circuit structure area used for constant measurement, and further, the product quality is influenced by the misjudgment of engineering. In the existing production, no better method is used for detecting defects of all measurement areas, and the measurement numerical value abnormity caused by the defects is reflected to influence the production process slowly.
Disclosure of Invention
The invention provides a method for monitoring defects of a product measuring area, which is used for monitoring the defect conditions of all measuring areas of a product, further quickly finding the defect abnormity of the measuring areas and improving the production working efficiency.
In order to achieve the above object, the present invention provides a method for monitoring defects of a product measurement area, comprising the following steps:
the method comprises the following steps: setting a measurement area selected by a measurement station as a defect detection area;
step two: according to the measurement samples selected by the chip in the site measurement process, the defect detection program takes all the measurement samples as defect detection samples;
step three: repeating the step one and the step two pairs of key measurement, wherein each step of measurement defines different measurement areas as defect detection areas, and defines a sample needing to be measured as a defect detection sample;
step four: defining the sequence arrangement for comparing each defect detection sample in the defect detection program;
step five: and setting the sensitivity of all the stations aiming at the defect detection program of the measurement area to complete the defect detection program of each measurement area.
Further, the method also comprises the following steps: and detecting defects before the chip is manufactured to the measurement manufacturing, and finding whether the measurement area has abnormality or not.
Further, the method performs defect detection with respect to a measurement region above a boundary region between unit chips.
Furthermore, the chip layout is divided into unit chips according to the transverse direction and the longitudinal direction.
Further, the defect detection device is an optical detection device.
The method for monitoring the defects of the product measuring area provided by the invention can detect the defects of the measuring area aiming at the area to be measured of each measuring station of the product, and can quickly find out whether the defect abnormality exists in the measuring area, thereby avoiding the influence on the real-time monitoring of key manufacture due to the abnormality of the measuring result of the key manufacture caused by the defects, and further improving the yield of the product.
Drawings
Fig. 1 is a schematic diagram of a unit chip defined by a mask and a scrubber line mechanism therebetween.
FIG. 2 is a flowchart of a method for defect monitoring of a product measurement area according to a preferred embodiment of the present invention.
Fig. 3 is a schematic view showing the arrangement of the detection scanning area after the active area is etched.
Fig. 4 is a schematic view showing the arrangement of the detection scanning sample after the active region is etched.
FIG. 5 is a schematic diagram of the STI CMP scan region arrangement.
Fig. 6 is a schematic diagram showing an STI CMP scan sample arrangement.
FIG. 7 is a schematic diagram illustrating the sequence of comparing samples of the defect inspection program.
Detailed Description
The following description will be given with reference to the accompanying drawings, but the present invention is not limited to the following embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is noted that the drawings are in greatly simplified form and that non-precision ratios are used for convenience and clarity only to aid in the description of the embodiments of the invention.
Referring to fig. 2, fig. 2 is a flowchart illustrating a method for defect monitoring of a product measurement area according to a preferred embodiment of the invention. The invention provides a method for monitoring defects of a product measurement area, which comprises the following steps:
step one S100: setting a measurement area selected by a measurement station as a defect detection area;
step two S200: according to the measurement samples selected by the chip in the site measurement process, the defect detection program takes all the measurement samples as defect detection samples;
step three S300: repeating the step one and the step two pairs of key measurement, wherein each step of measurement defines different measurement areas as defect detection areas, and defines a sample needing to be measured as a defect detection sample;
step four S400: defining the sequence arrangement for comparing each defect detection sample in the defect detection program;
step five S500: and setting the sensitivity of all the stations aiming at the defect detection program of the measurement area to complete the defect detection program of each measurement area.
According to the preferred embodiment of the present invention, the method further includes a step six S600: and detecting defects before the chip is manufactured to the measurement manufacturing, and finding whether the measurement area has abnormality or not.
The method performs defect detection on a measurement region above a boundary region between unit chips. The chip layout is divided into unit chips according to the transverse direction and the longitudinal direction. Further, the defect detection device is an optical detection device.
Fig. 3 is a schematic diagram showing the arrangement of a detection scanning area after active area etching, fig. 4 is a schematic diagram showing the arrangement of a detection scanning sample after active area etching, fig. 5 is a schematic diagram showing the arrangement of an STI CMP scanning area, and fig. 6 is a schematic diagram showing the arrangement of an STI CMP scanning sample. The invention sets defect detection areas and samples according to measurement areas of measurement stations and measurement positions on a chip, respectively defines different measurement areas as defect detection areas for each step of measurement of key manufacturing of active area etching, STI CMP and the like, and defines samples needing to be measured as defect detection samples.
FIG. 7 is a schematic diagram illustrating the sequence of comparing samples of the defect inspection program. In the preferred embodiment of the invention, 8 samples (samples) are set up, sample 1 and sample 2 are compared, sample 3 and sample 4 are compared, sample 5 and sample 6 are compared, and sample 7 and sample 8 are compared.
In summary, the method for monitoring defects of a product measurement area provided by the present invention performs defect detection on an area to be measured of each measurement station of a product, and can quickly find whether the measurement area has defects or not, thereby avoiding the defect causing the abnormality of the measurement result of the key manufacturing, and further avoiding the influence on the real-time monitoring of the key manufacturing, and further improving the yield of the product.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the protection scope of the present invention should be determined by the appended claims.
Claims (4)
1. A method for defect monitoring of a product measurement area, comprising the steps of:
the method comprises the following steps: setting a measurement area selected by a measurement station as a defect detection area;
step two: according to the measurement samples selected by the chip in the site measurement process, the defect detection program takes all the measurement samples as defect detection samples;
step three: repeating the step one and the step two pairs of key measurement, wherein each step of measurement defines different measurement areas as defect detection areas, and defines a sample needing to be measured as a defect detection sample;
step four: defining the sequence arrangement for comparing each defect detection sample in the defect detection program;
step five: setting the sensitivity of all stations aiming at the defect detection program of the measurement area to complete the defect detection program of each measurement area;
the measuring region is a measuring region above a boundary region between unit chips.
2. The method for product metrology area defect monitoring as claimed in claim 1, further comprising the steps of six: and detecting defects before the chip is manufactured to the measurement manufacturing, and finding whether the measurement area has abnormality or not.
3. The method for product metrology area defect monitoring as claimed in claim 1, wherein the chip layout is divided into unit chips in both horizontal and vertical directions.
4. The method of claim 1, wherein each defect inspection sample is inspected with an optical inspection device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710797272.2A CN107437514B (en) | 2017-09-06 | 2017-09-06 | Method for monitoring defects of product measurement area |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710797272.2A CN107437514B (en) | 2017-09-06 | 2017-09-06 | Method for monitoring defects of product measurement area |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107437514A CN107437514A (en) | 2017-12-05 |
| CN107437514B true CN107437514B (en) | 2020-01-24 |
Family
ID=60461524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710797272.2A Active CN107437514B (en) | 2017-09-06 | 2017-09-06 | Method for monitoring defects of product measurement area |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107437514B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110581082B (en) * | 2019-09-06 | 2022-02-01 | 上海华力集成电路制造有限公司 | Method for monitoring wafer defects by using defect detection machine |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6850320B2 (en) * | 2000-07-18 | 2005-02-01 | Hitachi, Ltd. | Method for inspecting defects and an apparatus for the same |
| CN103346101A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | Chip defect high-accuracy detecting method and scanning method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020022232A (en) * | 2000-09-19 | 2002-03-27 | 윤종용 | Wafer forming plural monitor pattern in a scribe line |
| US7915056B2 (en) * | 2008-03-20 | 2011-03-29 | International Business Machines Corporation | Image sensor monitor structure in scribe area |
| US7719299B2 (en) * | 2008-04-02 | 2010-05-18 | Texas Instruments Incorporated | Process and temperature insensitive flicker noise monitor circuit |
-
2017
- 2017-09-06 CN CN201710797272.2A patent/CN107437514B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6850320B2 (en) * | 2000-07-18 | 2005-02-01 | Hitachi, Ltd. | Method for inspecting defects and an apparatus for the same |
| CN103346101A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | Chip defect high-accuracy detecting method and scanning method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107437514A (en) | 2017-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10445875B2 (en) | Pattern-measuring apparatus and semiconductor-measuring system | |
| CN104425302B (en) | The defect inspection method and device of semiconductor devices | |
| US20130108147A1 (en) | Inspection method and device therefor | |
| JP2002100660A (en) | Defect detecting method, defect observing method and defect detecting apparatus | |
| TWI641961B (en) | Method and system for design-based fast in-line defect diagnosis, classification and sample | |
| TWI639203B (en) | Method and system for diagnosing a semiconductor wafer | |
| US11688052B2 (en) | Computer assisted weak pattern detection and quantification system | |
| CN103311146A (en) | Defect inspection method | |
| KR101615843B1 (en) | Semiconductor measurement device and recording medium | |
| JP2010034138A (en) | Pattern inspection apparatus, pattern inspection method and program | |
| CN111653500A (en) | Method for judging wafer yield loss | |
| CN105203941B (en) | The method of inspection of wafer sort special pattern and probe card defect | |
| CN112071765A (en) | Method for determining wafer processing parameters and wafer processing method | |
| CN111554588A (en) | Wafer defect monitoring system and monitoring method thereof | |
| CN107437514B (en) | Method for monitoring defects of product measurement area | |
| JPS63126242A (en) | Appearance inspection and device therefor | |
| CN109884078B (en) | Layered wafer inspection | |
| TWI504911B (en) | Method for testing special pattern and probe card defect in wafer testing | |
| CN104157586B (en) | The method being accurately positioned the repetitive structure defect that analysis electron beam defects detection finds | |
| CN115962718B (en) | Position detection method, electronic device, and computer-readable storage medium | |
| JP2001308157A (en) | Method of automatically assorting wafer having failure mode | |
| KR20030095092A (en) | Reviewing method of wafer defect | |
| JP5002395B2 (en) | Controller for charged particle beam equipment | |
| KR100914971B1 (en) | Method for inspecting fail on edge of semiconductor wafer | |
| JPH0374855A (en) | Chip size detection, chip pitch detection, automatic chip arrangement data formation, and method and device for inspecting semiconductor substrate using them |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |