CN107430345A - Exposure data generation method, manufacture method, exposure data generating means, exposure data generation program and manufacture system - Google Patents
Exposure data generation method, manufacture method, exposure data generating means, exposure data generation program and manufacture system Download PDFInfo
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- CN107430345A CN107430345A CN201580078204.XA CN201580078204A CN107430345A CN 107430345 A CN107430345 A CN 107430345A CN 201580078204 A CN201580078204 A CN 201580078204A CN 107430345 A CN107430345 A CN 107430345A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 117
- 238000000034 method Methods 0.000 title claims description 123
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- 238000012545 processing Methods 0.000 claims description 92
- 230000008569 process Effects 0.000 claims description 77
- 230000011218 segmentation Effects 0.000 claims description 54
- 241001269238 Data Species 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000007591 painting process Methods 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 230000006870 function Effects 0.000 claims description 6
- 238000003754 machining Methods 0.000 claims description 6
- 239000007800 oxidant agent Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 5
- 230000003628 erosive effect Effects 0.000 claims description 5
- 238000010422 painting Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 10
- 230000008859 change Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 375
- 238000011161 development Methods 0.000 description 15
- 230000018109 developmental process Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 12
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- 230000000694 effects Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
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- 238000001704 evaporation Methods 0.000 description 2
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- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
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- 239000004744 fabric Substances 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
Abstract
The present invention relates to the manufacture of layer stereo structure, there is provided the technology of the change in shape of male and fomale(M&F) caused by the depth that can adjust each recess in male and fomale(M&F) respectively and the position skew that can suppress exposure position.In the present invention, developed by exposure of the formation with carrying out selectivity to the resist layer to repeating resist layer in each layer and the resist layer stack generated, to manufacture layer stereo structure.Therefore, according to each exposing patterns for each resist layer, the depth of each recess in male and fomale(M&F) can be adjusted respectively.In addition, in the present invention, the exposure area of exposure data is made up of convex region, concave region and concave surface peripheral region.Therefore, in the case that two layers offsets, can also suppress to produce unexpected step difference in the male and fomale(M&F) of layer stereo structure when being exposed certain two resist layer.
Description
Technical field
The present invention relates to manufacture the technology of layer stereo structure by being exposed according to exposure data.
Background technology
In the past, it is known that optionally exposing the development removed after the resist of stacking by development in resist layer stack can
Molten region, manufacture the technology of the layer stereo structure in side with male and fomale(M&F).
As the manufacture method of the layer stereo structure in side with male and fomale(M&F), for example, as it is known that following technology:Against corrosion
After the interarea part of the side of oxidant layer stack forms the overlay film against corrosion for etching resistant liquid, wet corrosion is carried out to the position without overlay film
Carve.However, when so forming male and fomale(M&F) by wet etching, it is difficult to adjust the depth of each recess in male and fomale(M&F) respectively.
In the technology that patent document 1 is recorded, after the different resist layer of multilayer resist composition is laminated with, by multi beam
The different exposure light of wavelength is irradiated in resist layer stack, optionally exposes resist layer stack.Then, development is passed through
The solvable region of development in resist layer stack is removed, manufactures layer stereo structure.In the art, it can manufacture and adjust respectively
The layer stereo structure of the depth of each recess in whole male and fomale(M&F).
Prior art literature
Patent document
Patent document 1:Japanese Unexamined Patent Publication 2012-208350 publications.
The content of the invention
Invent problem to be solved
However, as described in Patent Document 1, when the composition difference of resist in layers, it is necessary to set multiple for applying
The apparatus for coating of the different resist of each composition of cloth.In addition, as described in Patent Document 1, when to each resist layer irradiation multi beam ripple
, it is necessary to set multiple exposure devices for being used to irradiate the different exposure light of each wavelength when growing different exposure lights.Therefore, from
Manufacture the easiness of the manufacture processing of layer stereo structure, from the viewpoint of manufacturing cost, not preferably.
In addition, for resist layer, the situation that exposure position does not produce position skew completely is seldom, generally slightly produces position
Put skew.In this case, in the technology that patent document 1 is recorded, position skew when exposing each resist layer causes institute
The layer stereo structure of manufacture has and desired variform male and fomale(M&F).Therefore, when exposing each resist layer, even if
In the case where producing above-mentioned position skew, also demand can manufacture the skill of the layer stereo structure with desired male and fomale(M&F)
Art.
The present invention proposes in view of the above problems, is related to the manufacture of layer stereo structure, can its object is to provide
The shape of male and fomale(M&F) caused by the depth for adjusting each recess in male and fomale(M&F) respectively and the position skew that exposure position can be suppressed
The technology of shape change.
Solves the technological means of problem
The exposure data generation method of the 1st aspect of the present invention, resist layer stack is being developed to manufacture multilayer
Before stereochemical structure, multiple exposure datas are generated, the resist layer stack is the shape to repeating resist layer in each layer
Into and to the resist layer exposure and the layered product that generates, it is characterised in that possess:Split pattern generation process, base
In the design data for the layer stereo structure for representing to have in side male and fomale(M&F), generation is represented in depth direction by described each
Layer is by multiple segmentation patterns of each pattern during the layer stereo segmentation of structures;And data generation process, for described more
Individual segmentation pattern, concave region and the position of concave surface are included by the convex region for including convex surface in the side, in the side
Concave surface peripheral region around the concave region is set as exposure area, and generates multiple exposure datas.
The exposure data generation method of the 2nd aspect of the present invention, the exposure data life as described in the 1st aspect of the present invention
Into method, it is characterised in that the data generation process is the process for performing following processing:First processing, for the multiple
Split pattern, the domain of the existence of the layer stereo structure is set as exposure area, the non-of layer stereo structure is deposited
It is set as non-exposed areas in region;Second processing, by the layer in each exposure area after the described first processing in the side
Also the region for setting exposure area is changed to non-exposed areas, so as to which the convex region and the concave region to be set as exposing
Light region;And the 3rd processing, institute that will be in each non-exposed areas after the second processing around the concave region
State concave surface peripheral region and be changed to exposure area, so as to by around the convex region, the concave region and the concave surface
Region is set as exposure area, generates the multiple exposure data.
The exposure data generation method of the 3rd aspect of the present invention, as described in the 1st aspect of the present invention or second method
Exposure data generation method, it is characterised in that learn in advance exposure position when exposure device is exposed to resist layer from
Benchmark exposure position offset in the case of skew higher limit, and using the higher limit as registration accuracy, around the concave surface
The width in region is 2 times to 3 times of length of the registration accuracy.
The exposure data generation method of the 4th aspect of the present invention, such as appointing in the 1st aspect of the present invention to Third Way
Exposure data generation method described in one, it is characterised in that the male and fomale(M&F) has multiple recesses, wide in the multiple recess
Spend relatively wide recess and formed relatively shallow, the relatively narrow recess of width forms relatively deep in the multiple recess.
The manufacture method of the 5th aspect of the present invention, to repeating the formation of resist layer in each layer and to described anti-
The resist layer stack lost the exposure of oxidant layer and generated is developed, to manufacture the layer stereo knot in side with male and fomale(M&F)
Structure, it is characterised in that as according to the process repeated from opposite side to the order of the side to each layer, there is following work
Sequence:Painting process, painting erosion resistant agent form resist layer;Prebake process, the resist layer is heated, and exposed
Light process, based on described more and what is generated by the exposure data generation method any one of first method to fourth way
The exposure data corresponding with this layer in individual exposure data, exposes the resist layer.As for by each layer
The work that the resist layer stack for performing the painting process, the prebake process and the exposure process and generating performs
Sequence, there is following process:Developing procedure, the against corrosion of the position not being exposed in the exposure process is removed by developer solution
Agent, the layer stereo structure is obtained, and bakee process firmly, the layer stereo structure is heated.
The manufacture method of the 6th aspect of the present invention, the manufacture method as described in the 5th aspect of the present invention, its feature exist
In, as according to the process repeated from the opposite side to the order of the side to each layer, except the painting process,
Beyond the prebake process and the exposure process, also there is the rear baking heated to the resist layer being exposed
Roast process;As for by each layer is performed the painting process, the prebake process, the exposure process and
The process that the rear resist layer stack for bakeing process and generating performs, there is the developing procedure and the hard baking work
Sequence.
The manufacture method of the 7th aspect of the present invention, the manufacturer as described in the 5th aspect of the present invention or the 6th mode
Method, it is characterised in that as the process carried out after the hard baking process, have to described in the layer stereo structure
The Surface Machining process that the surface of side is processed.
The manufacture method of the 8th aspect of the present invention, as described in any one of 5th aspect of the present invention to the 7th mode
Manufacture method, it is characterised in that in the painting process, the composition of the resist of coating is identical in each layer.
The manufacture method of the 9th aspect of the present invention, as described in any one of 5th aspect of the present invention to eighth mode
Manufacture method, it is characterised in that the exposure process is by using up described resist layer one side scan exposure while shining
Exposure light is penetrated continuously to carry out the direct description process of partial exposure.
The exposure data generating means of the 10th aspect of the present invention, resist layer stack is being developed to manufacture multilayer
Generate multiple exposure datas before stereochemical structure, the resist layer stack be each layer repeat the formation of resist layer with
And exposure to the resist layer and the layered product that generates, it is characterised in that possess:Split tern generation unit, based on table
Show the design data of the layer stereo structure in side with male and fomale(M&F), generation represents will by each layer in depth direction
Multiple segmentation patterns of each pattern during the layer stereo segmentation of structures;And data generating unit, for the multiple point
Pattern is cut, includes the concave region of concave surface and positioned at institute by the convex region for including convex surface in the side, in the side
The concave surface peripheral region stated around concave region is set as exposure area, and generates multiple exposure datas.
The exposure data generating means of the 11st aspect of the present invention, the exposure data as described in the 10th aspect of the present invention
Generating means, it is characterised in that the data generating unit has:First processing, for the multiple segmentation pattern, by described in
The domain of the existence of layer stereo structure is set as exposure area, and the non-domain of the existence of the layer stereo structure is set as into non-exposure
Light region;Second processing, the layer in each exposure area after the described first processing in the side is also set into exposure area
Region is changed to non-exposed areas, so as to which the convex region and the concave region are set as into exposure area;And the 3rd
Processing, it is changed to the concave surface peripheral region around the concave region is located in each non-exposed areas after second processing
Exposure area, the convex region, the concave region and the concave surface peripheral region are set as exposure area, so as to raw
Into the multiple exposure data.
The exposure data generating means of the 12nd aspect of the present invention, such as the 10th aspect of the present invention or the 11st mode institute
The exposure data generating means stated, it is characterised in that learn exposure position when exposure device is exposed to resist layer in advance
The higher limit from the skew in the case of the skew of benchmark exposure position is put, and using the higher limit as registration accuracy, the concave surface
The width of peripheral region is 2 to 3 times of the length of the registration accuracy.
The exposure data generating means of the 13rd aspect of the present invention, if the 10th aspect of the present invention is into the 12nd mode
Any one described in exposure data generating means, it is characterised in that the male and fomale(M&F) has multiple recesses, the multiple recess
The relatively wide recess of middle width forms relatively shallow, and the relatively narrow recess of width forms relatively deep in the multiple recess.
The 14th aspect of the present invention exposure data generation program installation in a computer, by CPU in memory by
Perform, so that the computer plays the 10th aspect of the present invention to the exposure data described in any one of the 13rd mode
The function of generating means.
The manufacture system of the 15th aspect of the present invention, to repeating the formation of resist layer in each layer and to described
The exposure of resist layer and the resist layer stack that generates are developed, to manufacture the layer stereo knot in side with male and fomale(M&F)
Structure, it is characterised in that possess:The 10th aspect of the present invention to the exposure data described in any one of the 13rd mode generates dress
Put;Apparatus for coating, painting erosion resistant agent and form resist layer;Heater, the resist layer is heated;Exposure dress
Put, the resist layer is exposed;And developing apparatus, the portion not exposed by the exposure device is removed by developer solution
The resist of position.
The manufacture system of the 16th aspect of the present invention, the manufacture system as described in the 15th aspect of the present invention, it is special
Sign is there is the surface processing device being processed to the surface of the side of the layer stereo structure.
The manufacture system of the 17th aspect of the present invention, the system as described in the 15th aspect of the present invention or the 16th mode
Make system, it is characterised in that the composition of the resist of the apparatus for coating coating is identical in each layer.
The manufacture system of the 18th aspect of the present invention, such as any in the 15th aspect of the present invention to the 17th mode
Manufacture system described in, it is characterised in that the exposure device is by scanning the resist layer while irradiating
Exposure light continuously carries out the direct drawing apparatus of partial exposure.
Invention effect
In the present invention, by repeating the formation of resist layer in each layer and the resist layer being selected
The exposure of property and the resist layer stack that generates are developed, to manufacture layer stereo structure.Therefore, it is possible to according to each resist
Each exposing patterns of layer, the depth of each recess in male and fomale(M&F) is adjusted respectively.
In addition, in the present invention, the exposure area of exposure data is by convex region, concave region and concave surface peripheral region
Form.Therefore, when being exposed in the case of being offset even in two layers to certain two layers of resist layer, can also suppress in layer stereo
The male and fomale(M&F) of structure produces the step difference outside expecting.
Brief description of the drawings
Fig. 1 is the flow chart for the flow for representing exposure data generation processing and manufacture processing.
Fig. 2 is the stereogram of one of layer stereo structure for representing to be manufactured according to Fig. 1 flow.
Fig. 3 is the block diagram for the electrical structure for representing exposure data generating means.
Fig. 4 is to represent the figure for splitting pattern after the first processing.
Fig. 5 is to represent the figure for splitting pattern after the first processing.
Fig. 6 is to represent the figure for splitting pattern after the first processing.
Fig. 7 is to represent the figure for splitting pattern after the first processing.
Fig. 8 is the figure that each segmentation pattern after the first processing is regarded from Fig. 2 Section A-A.
Fig. 9 is to represent the figure for splitting pattern after second processing.
Figure 10 is to represent the figure for splitting pattern after second processing.
Figure 11 is to represent the figure for splitting pattern after second processing.
Figure 12 is to represent the figure for splitting pattern after second processing.
Figure 13 be from Fig. 2 Section A-A regard second processing after each segmentation pattern figure.
Figure 14 is to represent the figure for splitting pattern after the 3rd processing.
Figure 15 is to represent the figure for splitting pattern after the 3rd processing.
Figure 16 is to represent the figure for splitting pattern after the 3rd processing.
Figure 17 is to represent the figure for splitting pattern after the 3rd processing.
Figure 18 is the figure from each segmentation pattern after Fig. 2 processing of Section A-A view the 3rd.
Figure 19 is the figure from the manufacturing process of Fig. 2 Section A-A view layer stereo structure.
Figure 20 is the figure from the manufacturing process of Fig. 2 Section A-A view layer stereo structure.
Figure 21 is the figure from the manufacturing process of Fig. 2 Section A-A view layer stereo structure.
Figure 22 is the figure from the manufacturing process of Fig. 2 Section A-A view layer stereo structure.
Figure 23 is the figure from the manufacturing process of Fig. 2 Section A-A view layer stereo structure.
Figure 24 is the figure from the manufacturing process of Fig. 2 Section A-A view layer stereo structure.
Figure 25 is in the case where exposure position produces skew, from the multiple-layer stand of Fig. 2 Section A-A view comparative example
The figure of the manufacturing process of body structure.
Figure 26 is in the case where exposure position produces skew, from the multiple-layer stand of Fig. 2 Section A-A view comparative example
The figure of the manufacturing process of body structure.
Figure 27 is in the case where exposure position produces skew, from the multiple-layer stand of Fig. 2 Section A-A view comparative example
The figure of the manufacturing process of body structure.
Figure 28 is in the case where exposure position produces skew, from the multiple-layer stand of Fig. 2 Section A-A view comparative example
The figure of the manufacturing process of body structure.
Figure 29 is in the case where exposure position produces skew, from the multiple-layer stand of Fig. 2 Section A-A view comparative example
The figure of the manufacturing process of body structure.
Figure 30 is in the case where exposure position produces skew, from the more of Fig. 2 Section A-A view present embodiment
The figure of the manufacturing process of layer stereochemical structure.
Figure 31 is in the case where exposure position produces skew, from the more of Fig. 2 Section A-A view present embodiment
The figure of the manufacturing process of layer stereochemical structure.
Figure 32 is in the case where exposure position produces skew, from the more of Fig. 2 Section A-A view present embodiment
The figure of the manufacturing process of layer stereochemical structure.
Figure 33 is in the case where exposure position produces skew, from the more of Fig. 2 Section A-A view present embodiment
The figure of the manufacturing process of layer stereochemical structure.
Figure 34 is in the case where exposure position produces skew, from the more of Fig. 2 Section A-A view present embodiment
The figure of the manufacturing process of layer stereochemical structure.
Figure 35 is in the case where exposure position produces skew, from the more of Fig. 2 Section A-A view present embodiment
The figure of the manufacturing process of layer stereochemical structure.
Embodiment
Below, based on brief description of the drawings embodiments of the present invention.In the accompanying drawings to the portion with identical 26S Proteasome Structure and Function
Minute mark notes identical reference and omits repeat specification.In addition, each accompanying drawing is schematically shown.It should be noted that
In a part of accompanying drawing, for specific direction relation, suitably mark using Z axis as the axle of vertical and using X/Y plane as horizontal plane
XYZ orthogonal axis.In the following description, in the case where being only denoted as up and down, upper finger+Z sides, lower finger-Z sides.
The embodiment > of < 1
The configuration example > of the layer stereo structures 100 of < 1.1
Fig. 1 is the system for representing to generate the exposure data generation processing of multiple exposure datas and manufacture layer stereo structure 100
Make the flow chart of the flow of processing.Step S1, S2 in Fig. 1 represents each operation of exposure data generation processing, the step in Fig. 1
S3~S10 represents each operation of manufacture processing.
Fig. 2 is the stereogram of one of layer stereo structure 100 for representing to be manufactured according to Fig. 1 flow.Such as Fig. 2 institutes
Show, the layer stereo structure 100 of present embodiment is that the interarea in the+Z sides of base material 50 is laminated with 4 layers of resist layer 51~54
Structure, there is male and fomale(M&F) 110 in its+Z side.It is arranged with X direction in X/Y plane view using Y-direction as length in male and fomale(M&F) 110
First recess 111 of the rectangular shape on side, in X/Y plane view using Y-direction as the second recess 112 of the L-shaped of long side and
The 3rd round-shaped recess 113 in XY vertical views.
Below, each layer is ranked up and named, be referred to as first layer~4th successively to the layer of+Z sides from the layer of-Z sides
Layer.In addition, below, the face (the 4th layer of upper surface) of top side in male and fomale(M&F) 110 is referred to as convex surface 110a, by male and fomale(M&F) 110
The middle part than convex surface 110a depressions is referred to as concave surface 110b.In addition, the first recess 111 is the recess with three layer depths.That is,
The concave surface 110b of one recess 111 is located at the border of first layer and the second layer.In addition, the second recess 112 is that have two layer depths
Recess.That is, the concave surface 110b of the second recess 112 is located at the border of the second layer and third layer.In addition, the 3rd recess 113 is that have
The recess of one layer depth.That is, the concave surface 110b of the 3rd recess 113 is located at third layer and the 4th layer of border.
The exposure datas of < 1.2 generation processing >
Below, the exposure data generation processing in the manufacture before processing progress of layer stereo structure 100 is illustrated.
Fig. 3 is the block diagram for representing to perform the electrical structure of the exposure data generating means 7 of exposure data generation processing.Such as figure
Shown in 3, exposure data generating means 7 for example by via bus 75 by CPU (Central Processing Unit, central processing
Device) 71, ROM (Read Only Memory, read-only storage) 72, RAM (deposit by Random Access Memory, arbitrary access
Reservoir) 73, the common computer that is connected to each other such as storage device 74 forms.ROM72 storage program areas etc., RAM73 are to supply
CPU71 carries out operating area during defined handle.Storage device 74 is non-volatile by flash memory or hard disk unit etc.
Storage device is formed.
In addition, in exposure data generating means 7, input unit 76, display part 77, communication unit 78 and reading part 79 also with always
Line 75 connects.Input unit 76 is made up of various switches, touch-screen etc., receives the various inputs from operator.Display part 77 by
Liquid crystal display device, lamp etc. are formed, and various information are shown under CPU71 control.Communication unit 78 has via wired or wireless
And the data communication function carried out.Reading part 79 is read in the computer readable recording medium storing program for performing being inserted into, such as CD, DVD or USB
The data stored in memory.
Program P (exposure data generation program) is arranged in exposure data generating means 7, and in RAM73 (memory)
Performed by CPU71, thus, the segmentation tern generation unit as the function part of exposure data generating means 7 performs step S1, makees
Data generating unit for the function part of exposure data generating means 7 performs step S2.Thus, perform at exposure data generation
Reason.
Program P can be by being wirelessly read into exposure data generating means 7.Alternatively, it is also possible to by computer-readable
Mode, reading unit 79 is set to read the recording medium RM for logging program P, so as to which program P is read into exposure data generation dress
Put 7.
In exposure data generation processing, first, based on the design data for indicating layer stereo structure 100, generation
Multiple segmentation pattern (step S1:Split pattern generation process), the plurality of segmentation pattern represents that in depth direction will be more by each layer
Each pattern when layer stereochemical structure 100 is split.Herein, due to layer stereo structure 100 be by 4 layers of stereochemical structure formed, because
This generates 4 segmentation patterns in step sl.
In exposure data generation processing, next, carrying out the first processing to the 3rd processing, generation 4 to 4 segmentation patterns
Individual exposure data (step S2:Data generation process).
In data generation process, first, the first processing is carried out.Specifically, in pattern generation process is split
4 obtained segmentation patterns, are set as exposure area 90, by layer stereo structure by the domain of the existence of layer stereo structure 100
100 non-domain of the existence is set as non-exposed areas 91.Fig. 4~Fig. 7 is to represent first according to the order of first layer~four layer
The figure of 4 segmentation patterns 11~14 after processing.
As shown in Fig. 2 the first layer in layer stereo structure 100 does not form the recess 113 of the first recess the 111~the 3rd.Change
Yan Zhi, the Zone Full of first layer are the domain of the existence of layer stereo structure 100.Therefore, in pattern 11 is split, by first layer
Zone Full be set as exposure area 90.
In addition, as shown in Fig. 2 layer stereo structure 100 the second layer formed the first recess 111, it is recessed not form second
The recess 113 of portion 112 and the 3rd.In other words, the region that the first recess 111 is formed in the Zone Full of the second layer is layer stereo knot
The non-domain of the existence of structure 100, remaining area is the domain of the existence of layer stereo structure 100 in the Zone Full of the second layer.Therefore,
In pattern 12 is split, the above-mentioned non-domain of the existence in the Zone Full of the second layer is set as non-exposed areas 91, by second
Above-mentioned domain of the existence in the Zone Full of layer is set as exposure area 90.
In addition, as shown in Fig. 2 the third layer in layer stereo structure 100 forms the first recess 111 and the second recess 112,
The 3rd recess 113 is not formed.In other words, in the Zone Full of third layer formed with the first recess 111 and the second recess 112
Region is the non-domain of the existence of layer stereo structure 100, and remaining area is layer stereo structure 100 in the Zone Full of third layer
Domain of the existence.Therefore, in pattern 13 is split, the above-mentioned non-domain of the existence in the Zone Full of third layer is set as non-exposure
Light region 91, the above-mentioned domain of the existence in the Zone Full of third layer is set as exposure area 90.
In addition, as shown in Fig. 2 the 4th layer in layer stereo structure 100 forms the recess 113 of the first recess the 111~the 3rd.
In other words, the region formed with the recess 113 of the first recess the 111~the 3rd in the 4th layer of Zone Full is layer stereo structure
100 non-domain of the existence, remaining area is the domain of the existence of layer stereo structure 100 in the 4th layer of Zone Full.Therefore, exist
Split in pattern 14, the above-mentioned non-domain of the existence in the 4th layer of Zone Full is set as non-exposed areas 91, by the 4th layer
Zone Full in above-mentioned domain of the existence be set as exposure area 90.Fig. 8 be from coming from Fig. 2 Section A-A this at first
The figure of the segmentation pattern 11~14 at the time point after reason.
In data generation process, next, carrying out second processing.Specifically, each exposure area after the first processing
The region for being set to exposure area 90 on its upper strata (layer of+Z sides) in 90 is changed to non-exposed areas 91.Fig. 9~Figure 12
It is that 4 figures for splitting pattern 21~24 after second processing are represented according to the order of first layer~four layer.Below, in each segmentation
In pattern, the region that convex surface 110a is included in+Z sides is referred to as convex region 90a, the region that concave surface 110b is included in+Z sides is claimed
For concave region 90b.
By the second processing carried out to first layer, split in the exposure area 90 of pattern 11 and splitting pattern 12~14
Also the region for setting exposure area 90 is changed to non-exposed areas 91, and segmentation pattern 11 is changed to split pattern 21.According to
Fig. 2 and Fig. 9 understands that the exposure area 90 split in pattern 21 is concave region 90b, and concave region 90b includes the in+Z sides
The concave surface 110b of one recess 111.
In addition, by the second processing carried out to the second layer, split in the exposure area 90 of pattern 12 and splitting pattern
13rd, 14 regions for also setting exposure area 90 are changed to non-exposed areas 91, and segmentation pattern 12 is changed to split pattern 22.
It can be seen from Fig. 2 and Figure 10, it is concave region 90b to split the exposure area 90 in pattern 22, and concave region 90b wraps in+Z sides
Include the concave surface 110b of the second recess 112.
In addition, by the second processing carried out to third layer, split in the exposure area 90 of pattern 13 and splitting pattern
14 regions for also setting exposure area 90 are changed to non-exposed areas 91, and segmentation pattern 13 is changed to split pattern 23.Root
Understood according to Fig. 2 and Figure 11, the exposure area 90 split in pattern 23 is concave region 90b, and concave region 90b includes in+Z sides
The concave surface 110b's of 3rd recess 113.
Further, since in layer stereo structure 100 the 4th layer be the superiors, therefore, though to the 4th layer carry out second
Processing, it will not also change exposure area 90 and non-exposed areas 91.Therefore, segmentation pattern 24 is same with segmentation pattern 14
Pattern.It can be seen from Fig. 2 and Figure 12, the exposure area 90 split in pattern 24 is convex region 90a, convex region 90a+
Z sides include convex surface 110a.
As described above, in the segmentation pattern 21~24 after second processing, by convex region 90a and concave regions
Domain 90b is set as exposure area 90.Figure 13 is the segmentation figure at the time point after above-mentioned second processing from Fig. 2 Section A-A
The figure of case 21~24.
In data generation process, next, carrying out the 3rd processing.Specifically, each non-exposed area after second processing
Region in domain 91 around concave region 90b is changed to exposure area 90.Figure 14~Figure 17 be according to first layer~
4th layer of order represents the figure of 4 segmentation patterns 31~34 after the 3rd processing.Below, by each segmentation pattern middle position in concave surface
Region around 110b is referred to as concave surface peripheral region 90c.
By the 3rd processing carried out to first layer, split in the non-exposed areas 91 of pattern 21 and be located at concave region 90b
Around concave surface peripheral region 90c be changed to exposure area 90, segmentation pattern 21 is changed to split pattern 31.According to figure
14 understand that peripheral region 90c in concave surface is the rectangular ring region using Y-direction as long side.
In addition, by the 3rd processing carried out to the second layer, split in the non-exposed areas 91 of pattern 22 and be located at concave regions
Concave surface peripheral region 90c around the 90b of domain is changed to exposure area 90, and segmentation pattern 22 is changed to split pattern 32.
It can be seen from Figure 15, peripheral region 90c in concave surface is the L word annular sections using Y-direction as long side.
In addition, by the 3rd processing carried out to third layer, split in the non-exposed areas 91 of pattern 23 and be located at concave regions
Concave surface peripheral region 90c around the 90b of domain is changed to exposure area 90, and segmentation pattern 23 is changed to split pattern 33.
It can be seen from Figure 16, peripheral region 90c in concave surface is circular region.
Further, since the 4th layer of segmentation pattern 24 does not have concave region 90b, therefore, even if carrying out the to the 4th layer
Three processing, it will not also change exposure area 90 and non-exposed areas 91.Therefore, segmentation pattern 34 is with splitting pattern 14,24
Same pattern.
As described above, in the segmentation pattern 31~34 after the 3rd processing, by convex region 90a, concave regions
Domain 90b and concave surface peripheral region 90c are set as exposure area 90.Figure 18 is at Fig. 2 Section A-A view the above-mentioned 3rd
The figure of the segmentation pattern 31~34 at the time point after reason.
So, the data of the 4 segmentation patterns 31~34 generated in first the~the three processing of processing turn into multilayer
Stereochemical structure 100 be supplied to during manufacture processing 4 exposure datas of exposure device.
In the present embodiment, the registration accuracy of exposure device is known a priori by the 3rd before processing of progress, around concave surface
Region 90c width W40 is set as 2 times of the length of registration accuracy.Herein, registration accuracy refers to be exposed resist layer
When exposure position from benchmark exposure position offset when skew higher limit, be and Japanese Unexamined Patent Publication 2009-224523 publications
In overlapping accuracy, the registration accuracy identical concept in Japanese Unexamined Patent Publication 2014-103343 publications.So, in aftermentioned <
The effect of width W40 in position skew > in 1.4 exposure process to setting concave surface peripheral region 90c is described in detail.
The manufacture processing > of the layer stereo structures 100 of < 1.3
The manufacture system for manufacturing layer stereo structure 100 is following system:Shape to repeating resist layer in each layer
Into and to the resist layer exposure and the resist layer stack that generates develop, there is male and fomale(M&F) in+Z sides to manufacture
110 layer stereo structure 100.
The manufacture system has:Exposure data generating means 7;Apparatus for coating, its painting erosion resistant agent and form resist layer;
Heater, it is heated to resist layer;Exposure device, it exposes resist layer;Developing apparatus, it is removed by developer solution
Remove resist of the exposure device without the position of exposure;And surface processing device, carry out Surface Machining.Manufacture system, both may be used
, can also be by configuring above-mentioned each device with straight column mode come structure to be formed by configuring above-mentioned each device in a manner of group
Into.
Figure 19~Figure 24 is the figure from the manufacturing process of Fig. 2 Section A-A view layer stereo structure 100.Below,
Illustrate from Fig. 2 Section A-A view when layer stereo structure 100 manufacture processing.
In manufacture processing, first, negative resist is coated on the interarea of the side (+Z sides) of base material 50 by apparatus for coating,
(the step S3 of resist layer 51 of first layer is formed on base material 50:Painting process).It should be noted that the resist is to exposing
The exposure light used in electro-optical device has permeability.
Next, heater heats to resist layer 51, the solvent in resist layer 51 is set to evaporate (step S4:
Prebake process).
Next, exposure device is based on first layer in 4 exposure datas that processing generation is generated by above-mentioned exposure data
Exposure data, (step S5 is exposed to resist layer 51:Exposure process).Equivalent to segmentation pattern 31 in resist layer 51
The position of exposure area 90 be exposed, turn into the insoluble region 92 of development.In addition, equivalent to segmentation pattern 31 in resist layer 51
The position of non-exposed areas 91 be not exposed, the state in the solvable region 93 that keeps developing.Exposure device is for example by directly retouching
Device composition is painted, the direct drawing apparatus is used up come continuous by using up one side irradiation exposure to resist layer one side scan exposure
Ground carries out partial exposure.In this case, perform in step s 5 and directly describe process, it is not necessary to prepare and each exposure data
Corresponding mask, therefore preferably.
Next, heater heats to resist layer 51, the solvent of resist layer 51 is set to evaporate (step S6:Afterwards
Bakee process).Figure 19 is the figure of the manufacturing process for the layer stereo structure 100 for representing the time point.
When performing step S3~S6 to resist layer 51, to judging with the presence or absence of not formed resist layer
(step S7).Herein, due to as not formed resist layer, resist layer 52~54 be present, therefore in step S7 branches
For "Yes".
Next, step S3~S6 is performed to the resist layer 52 of the second layer on base material 50.As a result, resist layer
Position in 52 equivalent to the exposure area 90 of segmentation pattern 32 is exposed, and turns into the insoluble region 92 of development.As described above, this reality
Apply the resist used in mode has permeability to exposure light.Therefore, for the against corrosion of the lower floor as resist layer 52
For oxidant layer 51, the position equivalent to the exposure area 90 of segmentation pattern 32 is exposed, and turns into the insoluble region 92 of development.In addition,
Position in resist layer 52 equivalent to the non-exposed areas 91 of segmentation pattern 32 is not exposed, and keeps solvable region 93 of developing
State.Then, resist layer 52 is heated, evaporates the solvent in resist layer 52.Figure 20 is to represent the time point
Layer stereo structure 100 manufacturing process figure.
When performing step S3~S6 to resist layer 52, to judging with the presence or absence of not formed resist layer
(step S7).Herein, due to as not formed resist layer, resist layer 53,54 be present, therefore branch into step S7
"Yes".
Resist layer 53 and the 4th layer of resist layer 54 to the third layer on base material 50 similarly perform step S3
~S6.Figure 21 is the manufacturing process for representing to perform resist layer 53 the layer stereo structure 100 at step S3~S6 time point
Figure.Figure 22 is the manufacturing process for representing to perform resist layer 54 the layer stereo structure 100 at step S3~S6 time point
Figure.
So, according to the order from-Z sides to+Z sides, step S3~S6 is performed to each layer, so as to generate resist layer
Stack 57.Then, to being judged (step S7) with the presence or absence of not formed resist layer.Herein, due to whole it is against corrosion
Oxidant layer 51~54 has been formed, therefore branches into "No" in step S7.
Developing apparatus is the resist that solvable region 93 of developing in resist layer stack 57 is removed by developer solution, is obtained more
Layer stereochemical structure 100 (step S8:Developing procedure).Layer stereo structure 100 is obtained at the time point, in being handled in manufacture
Continue step S9, S10, so as to improve the intensity of layer stereo structure 100.
Next, heater heats to layer stereo structure 100, make solvent in layer stereo structure 100, attached
The developer solution in layer stereo structure 100 evaporates (step S9:It is hard to bakee process).Figure 23 is the multiple-layer stand for representing the time point
The figure of the manufacturing process of body structure 100.It should be noted that in fig. 2, in order to prevent diagram from becoming complicated, depict progress
(that is, the layer stereo knot corresponding with Figure 23 of layer stereo structure 100 at the time point before the Surface Machining process of next step
Structure 100).
Next, surface processing device is processed to the surface of+Z sides of layer stereo structure 100, covered with diaphragm 55
Cover the surface (step S10:Surface Machining process).As diaphragm 55, the film such as plated film or diamond-film-like is formed.Figure
24 be the figure by the layer stereo structure 100 of step S1~S10 manufactures.
As described above, in the manufacture method of present embodiment, to repeating resist layer in each layer
The resist layer stack 57 for being formed and carrying out the exposure of selectivity to the resist layer and generating is developed, to manufacture multilayer
Stereochemical structure 100.Therefore, it is possible to according to each exposing patterns to each resist layer, adjust each recess in male and fomale(M&F) 110 respectively
Depth.
Layer stereo structure 100 is used as the intaglio plate in such as printing treatment.Layer stereo structure 100 is being used as intaglio plate
In the case of, the relatively wide recess of width forms relatively shallow in preferably multiple recesses, and width is relatively narrow in the multiple recess
Recess formed relatively deep.Thus, when being filled into the ink of each recess and being transferred in transfer roll etc., can suppress in each recess
Ink transfer ratio deviation.Herein, short side in the top view when width of recess refers to the above-mentioned recess from upper surface
To width.As shown in Fig. 2 in the layer stereo structure 100 of present embodiment, relatively wide width W30 the 3rd recess
113 form relatively shallow, and intermediate width W20 the second recess 112 is intermediate depth, relatively narrow width W10 the first recess
111 form relatively deep.Therefore, from the above point of view, it is suppressed that deviation during transfer, so as to preferably.
In addition, as the layer stereo structure 100 of present embodiment, if the entire surface of the resist layer 51 of first layer
For insoluble region 92 of developing, then the adaptation raising between base material 50 and resist layer 51~54, so as to preferably.
In addition, as in the present embodiment, the composition identical mode for the resist that apparatus for coating is coated with layers
In, the different mode of the composition of resist in layers from the technology recorded such as Japanese Unexamined Patent Publication 2012-208350 publications
Compare, the manufacture processing of layer stereo structure 100 becomes easy, can also suppress manufacturing cost.
In addition, as in the present embodiment, exposure device irradiates the side of the exposure light of Same Wavelength to resist layer
In formula, with the technology recorded such as Japanese Unexamined Patent Publication 2012-208350 publications each resist layer is irradiated according to resist
Composition is different and the mode of exposure light that wavelength is different is compared, and the manufacture processing of layer stereo structure 100 becomes easy, also can
Suppress manufacturing cost.
Position skew > in the exposure process of < 1.4
In the manufacture processing > of the above-mentioned layer stereo structures 100 of < 1.3, illustrate to offset without position in resist layer
Preferable exposure position (benchmark exposure position) be exposed the situation of process.However, in the case where performing exposure process,
In XY faces, exposure position is generally offset in the range of registration accuracy.
It is assumed below that the situation of position skew is produced in exposure process, at the manufacture for illustrating present embodiment and comparative example
The difference of reason.Here, it is assumed that situations below:In the resist layer 51 of benchmark exposure position exposure first layer, exposed from benchmark
Position offset by registration accuracy to -X direction in the case of expose the second layer resist layer 52, from benchmark exposure position to+
X-direction exposes the resist layer 53 of third layer in the case of offset by registration accuracy, inclined from benchmark exposure position to -X direction
The 4th layer of resist layer 54 is exposed in the case of having moved registration accuracy.
Based on above-mentioned it is assumed that explanation is handled to manufacture layer stereo structure 100A situation by the manufacture of comparative example.
In the comparative example, using the data of the segmentation pattern 11~14 shown in Fig. 8 as exposure data, exposure process is performed.Figure 25~figure
29 be the figure from Fig. 2 Section A-A view layer stereo structure 100A manufacturing process.
First, step S3~S6 is performed to the resist layer 51A of the first layer on base material 50.As a result, resist layer
Position in 51A equivalent to the exposure area 90 of segmentation pattern 11 is exposed, and turns into the insoluble region 92 of development.Then, to against corrosion
Oxidant layer 51A is heated, and evaporates the solvent in resist layer 51A.Figure 25 is the layer stereo structure for representing the time point
The figure of 100A manufacturing process.
When performing step S3~S6 to resist layer 51A, to judging with the presence or absence of not formed resist layer
(step S7).Herein, due to as not formed resist layer, resist layer 52A~54A be present, therefore divide in step S7
Branch is "Yes".
Step S3~S6 is similarly performed to resist layer 52A~54A of the second layer on base material 50~four layer.Need
It is noted that in each step S5, as described above, offset by the feelings of registration accuracy from benchmark exposure position to ± X-direction
Exposure process is performed under condition.Figure 26 is the layer stereo structure for representing to perform resist layer 52A step S3~S6 time point
The figure of 100 manufacturing process.Figure 27 is the layer stereo structure for representing to perform resist layer 53A step S3~S6 time point
The figure of 100 manufacturing process.Figure 28 is the layer stereo structure for representing to perform resist layer 54A step S3~S6 time point
The figure of 100 manufacturing process.
So, step S3~S6 is performed to each layer according to the order from-Z sides to+Z sides, so as to generate resist stacking
Body 57A (Figure 28).Then, to being judged (step S7) with the presence or absence of not formed resist layer.Herein, due to whole
Resist layer 51A~54A has been formed, therefore branches into "No" in step S7.
Developing apparatus removes the resist in solvable region 93 of developing in resist layer stack 57A by developer solution, obtains more
Layer stereochemical structure 100A (step S8:Developing procedure).Next, heater heats to layer stereo structure 100A, make
Solvent in layer stereo structure 100, developer solution evaporation (the step S9 for being attached to layer stereo structure 100A:It is hard to bakee work
Sequence).Figure 29 is the figure of the manufacturing process for the layer stereo structure 100A for representing the time point.
The layer stereo structure 100A so manufactured is in male and fomale(M&F) 110A by the recess 113A structures of the first recess 111A~the 3rd
Into.However, male and fomale(M&F) 110A shape with perform without position skew preferable exposure process when layer stereo structure 100 in
Male and fomale(M&F) 110 shape it is different.Because the position skew of exposure position causes the development in resist layer stack 57A
The shape in solvable region 93 and the shape of male and fomale(M&F) 110 be not corresponding.So, in the manufacture method of comparative example, in exposure position
In the case of putting generation skew, it is impossible to layer stereo structure of the manufacture with desired male and fomale(M&F) 110.
Next, based on above-mentioned it is assumed that explanation is handled to manufacture layer stereo structure by the manufacture of present embodiment
100B situation.Below, using the data of the segmentation pattern 31~34 shown in Figure 18 as exposure data, exposure process is performed.Figure
30~Figure 35 is the figure from Fig. 2 Section A-A view layer stereo structure 100B manufacturing process.
First, step S3~S6 is performed to the resist layer 51B of the first layer on base material 50.As a result, resist layer
Position in 51B equivalent to the exposure area 90 of segmentation pattern 31 is exposed, and turns into the insoluble region 92 of development.In addition, resist
Position in layer 51B equivalent to the non-exposed areas 91 of segmentation pattern 31 is not exposed, and keeps the shape in the solvable region 93 of development
State.Then, resist layer 51B is heated, evaporates the solvent in resist layer 51B.Figure 30 represents the time point
The figure of layer stereo structure 100B manufacturing process.
After performing step S3~S6 to resist layer 51B, to being judged (step with the presence or absence of not formed resist layer
Rapid S7).Herein, due to as not formed resist layer, resist layer 52B~54B be present, therefore branch into step S7
"Yes".
Step S3~S6 is similarly performed to resist layer 52B~54B of the second layer on base material 50~four layer.Need
It is noted that in each step S5, as described above, offset by the feelings of registration accuracy from benchmark exposure position to ± X-direction
Under condition, exposure process is performed.Figure 31 is the layer stereo structure for representing to perform resist layer 52B step S3~S6 time point
The figure of 100B manufacturing process.Figure 32 represents to perform resist layer 53B the layer stereo structure at step S3~S6 time point
The figure of 100B manufacturing process.Figure 33 is the layer stereo knot for representing to perform resist layer 54B step S3~S6 time point
The figure of structure 100B manufacturing process.
So, step S3~S6 is performed to each layer according to the order from-Z sides to+Z sides, so as to generate resist stacking
Body 57B (Figure 33).Then, to being judged (step S7) with the presence or absence of not formed resist layer.Herein, due to whole
Resist layer 51B~54B has been formed, therefore branches into "No" in step S7.
Developing apparatus removes the resist in solvable region 93 of developing in resist layer stack 57B by developer solution, obtains more
Layer stereochemical structure 100B (step S8:Developing procedure).Next, heater heats to layer stereo structure 100B, make
Solvent in layer stereo structure 100B, developer solution evaporation (the step S9 for being attached to layer stereo structure 100B:It is hard to bakee work
Sequence).Figure 34 is the figure of the manufacturing process for the layer stereo structure 100B for representing the time point.
However the layer stereo structure 100B manufactured male and fomale(M&F) 110B position, with the 4th as the superiors
Position skew occurs for the exposure position of layer, and is offset from preferable position (position of male and fomale(M&F) 110).But according to Figure 23 and figure
34 understand that layer stereo structure 100B male and fomale(M&F) 110B shape is consistent with the shape of preferable male and fomale(M&F) 110.
In the present embodiment, because the exposure area 90 of exposure data is not included except convex region 90a, concave region
Other regions beyond 90b and concave surface peripheral region 90c, therefore to two layers of resist in the case of certain two layers skew
When layer is exposed, it can also suppress to produce unexpected step difference.For example, in a comparative example, because exposure area 90 includes
Above-mentioned other regions, therefore offset in the 4th layer of resist layer 54A relative to the resist layer 53A of third layer to -X direction
In the case of when being exposed, the second recess 112A generates unexpected step difference (Figure 27~Figure 29).However, in this embodiment party
In formula, because exposure area 90 is only made up of convex region 90a, concave region 90b and concave surface peripheral region 90c, therefore suppress
The quantity of exposure area.It thereby inhibiting in the insoluble region 92 of the development area insoluble with the development formed on upper strata that lower floor is formed
Unexpected step difference is produced between domain 92.Particularly, as in the present embodiment, if concave surface peripheral region 90c width
Degree W40 is 2 times of length of registration accuracy, then in the case of offseting maximum limit in the opposite direction even in certain two layers to this two
(that is, two layers is exposed in the case of opposite direction skew registration accuracy when layer resist layer is exposed
When), it can also prevent the alteration of form of each recess.Therefore, in the manufacture method of present embodiment, it is suppressed that because of exposure position
The change in shape of male and fomale(M&F) 110 caused by the skew of position.
Finally, surface processing device is processed to the surface of layer stereo structure 100B+Z sides, is covered with diaphragm 55B
Cover the surface (step S10:Surface Machining process).As diaphragm 55B, the film such as plated film or diamond-film-like is formed.
Figure 35 is the figure for representing the layer stereo structure 100B by step S1~S10 manufactures.
The variation > of < 2
It is explained above embodiments of the present invention, the present invention can carry out removing above-mentioned in the range of its purport is not departed from
Various changes beyond situation.
In the above-described embodiment, in order to be readily appreciated that, illustrate to be simple to manufacture (the figure of layer stereo structure 100 of shape
2) mode, but variously-shaped layer stereo structure can be manufactured by the present invention.In addition, in the above-described embodiment, say
The thickness degree for understanding each resist layer is fixed situation, but the thickness degree of each resist layer can not also be fixed.
In addition, in the above-described embodiment, the width W40 for illustrating concave surface peripheral region 90c is 2 times of registration accuracy
Situation, but it is not limited to this.But as described above, if it is considered that skew is gone forward side by side round about this two layers of upper strata and lower floor
During the situation of row exposure, then the width of preferred concave surface peripheral region is more than 2 times of registration accuracy.In addition, as noted previously, as
Exposure area is set to the wide layer stereo structure that can cause manufacture and produces unexpected step difference, it is therefore preferable that concave surface
The width of peripheral region is less than 3 times of registration accuracy.
In addition, in the above-described embodiment, what the layer stereo structure 100 for illustrating to manufacture was made up of 4 layers of resist layer
Situation, but it is not limited to this.The layer stereo structure 100 of manufacture can be both made up of the resist layer below 3 layers, can also
It is made up of more than 5 layers of resist layer.But if it can also be obtained from the case of the skew of each resist layer exposure position
To from the viewpoint of the layer stereo structure with desired male and fomale(M&F), more than the number of plies such as situation more than 4 layers in the case of,
The present invention is especially effective.
In addition, in the above-described embodiment, illustrate to generate multiple impressions by carrying out the first processing to the 3rd processing
According to mode, but be not limited to this.The mode of multiple exposure datas is generated even by other processing sequences, as long as upper
The exposure area set in exposure data is stated to be made up of convex region, concave region and concave surface peripheral region, with regard to can obtain with it is upper
State the same effect of embodiment.
In addition, in the above-described embodiment, illustrate to carry out afterwards being exposed process (step S5) to each resist layer
The mode of process (step S6) is bakeed afterwards.Generally, in rear baking process (step S6), have and promote heated resist layer
Cross-linking reaction, and improve the effect of the adaptation of the resist layer and its upper and lower.However, the material according to resist layer
The condition of matter, the thickness of the resist layer formed etc., bakeing process (step S6) even if after not implementing sometimes also can be abundant
Ground ensures the adaptation between each layer.Therefore, in this case, process (step S6) is bakeed after can also omitting.
It this concludes the description of exposure data generation method, manufacture method, the exposure data generation of embodiment and its variation
Device, exposure data generation program and manufacture system, but these are the examples of preferred embodiment in the present invention, and it is unlimited
Determine the scope that the present invention is implemented.The present invention can freely combine to the progress of each embodiment in the range of foregoing invention, be right
The arbitrary structures component of each embodiment is deformed or omitted in each embodiment arbitrary structural elements.
The explanation of reference
7 exposure data generating means
11~14,21~24,31~34 segmentation patterns
50 base materials
51~54,51A~54A, 51B~54B resist layers
55th, 55A, 55B diaphragm
57th, 57A, 57B resist layer stack
90 exposure areas
90a convex regions
90b concave regions
90c concave surfaces peripheral region
91 non-exposed areas
The insoluble region of 92 developments
The 93 solvable regions of development
100th, 100A, 100B layer stereo structure
110th, 110A, 110B male and fomale(M&F)
111st, the recesses of 111A first
112nd, the recesses of 112A second
113rd, the recesses of 113A the 3rd
S1~S10 steps
Claims (18)
1. a kind of exposure data generation method, before manufacturing layer stereo structure, given birth to being developed to resist layer stack
Into multiple exposure datas, the resist layer stack is formation to repeating resist layer in each layer and to described against corrosion
The exposure of oxidant layer and the layered product generated, it is characterised in that possess:
Split pattern generation process, it is raw based on the design data for the layer stereo structure for representing to have in side male and fomale(M&F)
Into the multiple segmentation patterns for representing each pattern when depth direction presses each layer by the layer stereo segmentation of structures;And
Data generation process, for the multiple segmentation pattern, the convex region on convex surface will be included in the side, described one
Side includes the concave region of concave surface and the concave surface peripheral region around the concave region is set as exposure area, and
Generate multiple exposure datas.
2. exposure data generation method as claimed in claim 1, it is characterised in that
The data generation process is the process for performing following processing:
First processing, for the multiple segmentation pattern, is set as exposure area by the domain of the existence of the layer stereo structure,
The non-domain of the existence of the layer stereo structure is set as non-exposed areas;
Second processing, the layer in each exposure area after the described first processing in the side is also set to the region of exposure area
Non-exposed areas is changed to, so as to which the convex region and the concave region are set as into exposure area;And
3rd processing, the concave surface week that will be located in each non-exposed areas after the second processing around the concave region
Enclose region and be changed to exposure area, so as to which the convex region, the concave region and the concave surface peripheral region be set
For exposure area, the multiple exposure data is generated.
3. exposure data generation method as claimed in claim 1 or 2, it is characterised in that
Learn exposure position when exposure device is exposed to resist layer from the case that benchmark exposure position is offset in advance
Skew higher limit, and using the higher limit as registration accuracy,
The width of the concave surface peripheral region is 2 times to 3 times of length of the registration accuracy.
4. such as exposure data generation method according to any one of claims 1 to 3, it is characterised in that
The male and fomale(M&F) has multiple recesses, and the relatively wide recess of width forms relatively shallow in the multiple recess, described more
The relatively narrow recess of width forms relatively deep in individual recess.
5. a kind of manufacture method, given birth to repeating the formation of resist layer and the exposure to the resist layer in each layer
Into resist layer stack developed, to manufacture the layer stereo structure in side with male and fomale(M&F), it is characterised in that
As according to the process repeated from opposite side to the order of the side to each layer, there is following process:
Painting process, painting erosion resistant agent form resist layer,
Prebake process, the resist layer is heated, and
Exposure process, based on described more and what is generated by exposure data generation method according to any one of claims 1 to 4
The exposure data corresponding with this layer in individual exposure data, exposes the resist layer;
As for by performing painting process, the prebake process and the exposure process to each layer to give birth to
Into resist layer stack perform process, there is following process:
Developing procedure, the resist at the position not being exposed in the exposure process is removed by developer solution, is obtained described more
Layer stereochemical structure, and
It is hard to bakee process, the layer stereo structure is heated.
6. manufacture method as claimed in claim 5, it is characterised in that
As according to the process repeated from the opposite side to the order of the side to each layer, except the coating work
Beyond sequence, the prebake process and the exposure process, also have what the resist layer being exposed was heated
After bakee process,
As for by performing painting process, the prebake process, the exposure process and the institute to each layer
The process that the resist layer stack for bakeing process after stating and generating performs, there is the developing procedure and the hard baking process.
7. the manufacture method as described in claim 5 or 6, it is characterised in that
As the process carried out after the hard baking process, there is the surface to the side of the layer stereo structure
The Surface Machining process being processed.
8. the manufacture method as any one of claim 5~7, it is characterised in that
In the painting process, the composition of the resist of coating is identical in each layer.
9. the manufacture method as any one of claim 5~8, it is characterised in that
The exposure process is to be used up by using up one side irradiation exposure to described resist layer one side scan exposure come continuously
Carry out the direct description process of partial exposure.
10. a kind of exposure data generating means, the previous existence of layer stereo structure is manufactured being developed to resist layer stack
Into multiple exposure datas, the resist layer stack is to repeat the formation of resist layer and to the resist in each layer
The exposure of layer and the layered product that generates, it is characterised in that possess:
Split tern generation unit, it is raw based on the design data for the layer stereo structure for representing to have in side male and fomale(M&F)
Into the multiple segmentation patterns for representing each pattern when depth direction presses each layer by the layer stereo segmentation of structures;And
Data generating unit, for the multiple segmentation pattern, the convex region on convex surface will be included in the side, described one
Side includes the concave region of concave surface and the concave surface peripheral region around the concave region is set as exposure area, and
Generate multiple exposure datas.
11. exposure data generating means as claimed in claim 10, it is characterised in that
The data generating unit has:
First processing, for the multiple segmentation pattern, is set as exposure area by the domain of the existence of the layer stereo structure,
The non-domain of the existence of the layer stereo structure is set as non-exposed areas;
Second processing, the layer in each exposure area after the described first processing in the side is also set to the region of exposure area
Non-exposed areas is changed to, so as to which the convex region and the concave region are set as into exposure area;And
3rd processing, the concave surface peripheral region around the concave region will be located in each non-exposed areas after second processing
Domain is changed to exposure area, and the convex region, the concave region and the concave surface peripheral region are set as into exposure region
Domain, so as to generate the multiple exposure data.
12. the exposure data generating means as described in claim 10 or 11, it is characterised in that
Learn exposure position when exposure device is exposed to resist layer from the case that benchmark exposure position is offset in advance
Skew higher limit, and using the higher limit as registration accuracy,
The width of the concave surface peripheral region is 2 to 3 times of the length of the registration accuracy.
13. the exposure data generating means as any one of claim 10~12, it is characterised in that
The male and fomale(M&F) has multiple recesses, and the relatively wide recess of width forms relatively shallow in the multiple recess, described more
The relatively narrow recess of width forms relatively deep in individual recess.
14. a kind of exposure data generates program, it is characterised in that it is installed in a computer, is performed in memory by CPU,
So that the computer plays the function of the exposure data generating means any one of claim 10~13.
15. a kind of manufacture system, to repeating the formation of resist layer and the exposure to the resist layer in each layer and
The resist layer stack of generation is developed, to manufacture the layer stereo structure in side with male and fomale(M&F), it is characterised in that tool
It is standby:
Exposure data generating means described in any one of claim 10~13;
Apparatus for coating, painting erosion resistant agent and form resist layer;
Heater, the resist layer is heated;
Exposure device, the resist layer is exposed;And
Developing apparatus, the resist at the position not exposed by the exposure device is removed by developer solution.
16. manufacture system as claimed in claim 15, it is characterised in that
The surface processing device that surface with the side to the layer stereo structure is processed.
17. the manufacture system as described in claim 15 or 16, it is characterised in that the resist of apparatus for coating coating into
Divide identical in each layer.
18. the manufacture system as any one of claim 15~17, it is characterised in that
The exposure device is by being scanned to the resist layer while irradiation exposure is used up continuously to carry out part
The direct drawing apparatus of exposure.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2015-068636 | 2015-03-30 | ||
JP2015068636A JP6427452B2 (en) | 2015-03-30 | 2015-03-30 | Exposure data generation method, manufacturing method, exposure data generation device, exposure data generation program, and manufacturing system |
PCT/JP2015/083016 WO2016157611A1 (en) | 2015-03-30 | 2015-11-25 | Light-exposure data creation method, manufacturing method, light-exposure data creation device, light-exposure data creation program, and manufacturing system |
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CN107430345A true CN107430345A (en) | 2017-12-01 |
CN107430345B CN107430345B (en) | 2019-04-12 |
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CN201580078204.XA Expired - Fee Related CN107430345B (en) | 2015-03-30 | 2015-11-25 | Exposure data generation method, the manufacturing method of layer stereo structure, exposure data generating means, the manufacture system of computer readable storage medium and layer stereo structure |
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JP (1) | JP6427452B2 (en) |
KR (1) | KR20170108149A (en) |
CN (1) | CN107430345B (en) |
TW (1) | TWI596445B (en) |
WO (1) | WO2016157611A1 (en) |
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CN113492218A (en) * | 2020-04-06 | 2021-10-12 | 株式会社斯库林集团 | Optical device and three-dimensional modeling device |
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JP6840007B2 (en) | 2017-03-24 | 2021-03-10 | 株式会社Screenホールディングス | Intaglio manufacturing method and intaglio manufacturing equipment |
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JP2012208350A (en) * | 2011-03-30 | 2012-10-25 | Lapis Semiconductor Co Ltd | Method for forming resist pattern, method for manufacturing three-dimensional structure and method for manufacturing semiconductor device |
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JP2747573B2 (en) * | 1991-07-25 | 1998-05-06 | 富士通株式会社 | Exposure data creation apparatus and exposure data creation method |
JP4156700B2 (en) * | 1998-03-16 | 2008-09-24 | 富士通株式会社 | EXPOSURE DATA CREATION METHOD, EXPOSURE DATA CREATION DEVICE, AND RECORDING MEDIUM |
JP2000199968A (en) * | 1999-01-06 | 2000-07-18 | Sony Corp | Multilayered resist structure and manufacture of three- dimensional fine structure using the same |
JP2002148817A (en) * | 2000-11-14 | 2002-05-22 | Mitsubishi Materials Corp | Method for patterning resist, contact probe with high aspect ratio and method for manufacturing the same |
JP2005049460A (en) * | 2003-07-30 | 2005-02-24 | Ricoh Co Ltd | Method and apparatus for forming resist pattern, method for designing photomask, and photomask |
JP4923254B2 (en) * | 2005-09-21 | 2012-04-25 | 国立大学法人東北大学 | Exposure method |
-
2015
- 2015-03-30 JP JP2015068636A patent/JP6427452B2/en not_active Expired - Fee Related
- 2015-11-25 KR KR1020177024361A patent/KR20170108149A/en active IP Right Grant
- 2015-11-25 CN CN201580078204.XA patent/CN107430345B/en not_active Expired - Fee Related
- 2015-11-25 WO PCT/JP2015/083016 patent/WO2016157611A1/en active Application Filing
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100487578C (en) * | 2003-04-24 | 2009-05-13 | Asml荷兰有限公司 | Lighographic processing method and device made therefrom |
CN100590842C (en) * | 2005-12-24 | 2010-02-17 | 国际商业机器公司 | Method for fabricating dual damascene structures |
JP2012208350A (en) * | 2011-03-30 | 2012-10-25 | Lapis Semiconductor Co Ltd | Method for forming resist pattern, method for manufacturing three-dimensional structure and method for manufacturing semiconductor device |
Cited By (2)
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CN113492218A (en) * | 2020-04-06 | 2021-10-12 | 株式会社斯库林集团 | Optical device and three-dimensional modeling device |
US11588080B2 (en) | 2020-04-06 | 2023-02-21 | SCREEN Holdings Co., Ltd. | Optical apparatus and three-dimensional modeling apparatus |
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TWI596445B (en) | 2017-08-21 |
TW201640231A (en) | 2016-11-16 |
CN107430345B (en) | 2019-04-12 |
JP2016188926A (en) | 2016-11-04 |
KR20170108149A (en) | 2017-09-26 |
WO2016157611A1 (en) | 2016-10-06 |
JP6427452B2 (en) | 2018-11-21 |
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